MC13851-2400EVK

Freescale Semiconductor Data Sheet: Advance Information Document Number: MC13851 Rev. 2.0, 12/2010 MC13851 Package Information Plastic Package: MLPD-8 2.0 × 2.0 × 0.6 mm Case: 2128-01 MC13851 General Purpose Low Noise Amplifier with Bypass Switch 1 Introduction The MC13851 is a cost-effective, high IP3 LNA with low noise figure. This is the smaller leadless package version of the MC13821 device. The MC13851 includes an integrated bypass switch to preserve high input intercept performance in variable signal strength environments and boosts dynamic range. On-chip bias circuitry offers low system cost. The input and output match are external to allow maximum design flexibility. An external resistor is used to set device current which allows balancing required linearity with low current consumption. Gain is optimized for applications greater than 1000 MHz. The MC13851 is fabricated with the advanced RF BiCMOS process using the eSiGe:C module and is available in the 2 × 2 mm MLPD-8 leadless package, offering a small, low height, easy-to-solder solution for applications with tight printed circuit board placement requirements. Ordering Information Device Device Marking Package MC13851EP 851 MLPD-8 Contents: 1 2 3 4 5 6 7 8 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Electrical Specifications . . . . . . . . . . . . . . . . . . .3 Application Information . . . . . . . . . . . . . . . . . . . .9 Printed Circuit and Bill of Materials . . . . . . . . .20 Scattering and Noise Parameters . . . . . . . . . . .22 Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .32 Product Documentation . . . . . . . . . . . . . . . . . . .33 Revision History . . . . . . . . . . . . . . . . . . . . . . . . .33 This document contains information on a new product. Specifications and information herein are subject to change without notice. © Freescale Semiconductor, Inc., 2006–2010. All rights reserved. Introduction 1.1 Features The MC13851 is intended for applications from 1000 MHz to 2500 MHz and the MC13852 is for applications less than 1000 MHz. • Gain: 18.7 dB (typical) at 1960 MHz and 17.7 dB (typical) at 2140 MHz • Output third order intercept point (OIP3): 16 dBm at 1960 MHz and 17 dBm (typical) dBm at 2140 MHz • Noise Figure (NF): 1.37 dB (typical) at 1960 MHz and 1.46 dB at 2140 MHz • Output 1 dB compression point (P1dB): 8 dBm (typical) at 1960 MHz and 8 dBm (typical) at 2140 MHz • IP3 Boost Circuitry from Freescale • Bypass mode has return losses comparable to active mode, for use in systems with filters and duplexers • Bypass mode improves dynamic range in variable signal strength environments • Integrated logic-controlled standby mode with current drain < 1uA • Total supply current variable from 2.5 mA–5 mA using an external bias resistor • In a receiver system with 20% active mode and 80% bypass mode, the average current drain is < 0.6 mA • On-chip bias sets the bias point • Bias stabilized for device and temperature variations • MLPD-8 leadless package with low parasitics • 1575 MHz, 1960 MHz, 2140 MHz and 2500 MHz application circuit evaluation boards with characterization data are available • Available in tape and reel packaging 1.2 Applications Ideal for use in any RF product that operates between 1000 MHz and 2.5 GHz, and may be applied in: • Buffer amplifiers • Mixers • IF amplifiers • Voltage controlled oscillators (VCOs) • Use with transceivers requiring external LNAs • Smart metering • Mobile—Cellular front end LNA, GPS, two-way radios • Consumer—WLAN, 802.11 b/g • Auto—GPS, active antenna, wireless security • Low current drain/long standby time for extended battery life applications MC13851 Advance Information, Rev. 2.0 2 Freescale Semiconductor Electrical Specifications Figure 1 shows a simplified block diagram of the MC13851 with the pinouts and location of the Pin 1 designator on the package. Pin 1 Identifier Figure 1. Functional Block Diagram 2 Electrical Specifications Table 1. lists the maximum ratings for the device. Table 1. Maximum Ratings (TA=25°C, unless otherwise noted) Symbol Value Unit Supply voltage Rating Vcc 3.3 Vdc Storage temperature range Tstg -65–150 °C Operating ambient temperature range -30–85 °C RF input power T A P RF 10 dBm Power dissipation Pdis 100 mW Thermal resistance, junction to case RthetaJC 24 °C/W Thermal resistance, junction to ambient, 4 layer board R 90 °C/W thetaJA Note: Maximum ratings 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the recommended Operating Conditions and Electrical Characteristics tables. 2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) ≤200V. Charge Device Model (CDM) ≤450V, and Machine Model (MM) ≤50V Table 2 lists the recommended operating conditions. Table 2. Recommended Operating Conditions Characteristic Symbol Min Typ Max Unit RF frequency range fRF 1000 — 2500 MHz Supply voltage VCC 2.3 2.75 3 V MC13851 Advance Information, Rev. 2.0 Freescale Semiconductor 3 Electrical Specifications Table 2. Recommended Operating Conditions (continued) Characteristic Symbol Min Typ Max Unit — 1.25 0 1.8 0 VCC 0.80 Vdc Vdc Logic voltage Input high voltage Input low voltage Table 3 shows the use of the Gain and Enable pins to select Active mode (High Gain), Bypass mode (Low Gain) or Standby mode (Disable) operation. Table 3. Truth Table Enable Pin Function Disable Pin Name Low Gain High Gain Low Gain High Gain Logic Circuit Bias Vcc Vcc 1 1 1 1 Toggles Gain Mode (Active or Bypass) Gain 0 1 0 1 Enable 1 1 0 0 Toggles LNA On/Off Notes: 1. Logic state 1 equals Vcc voltage. Logic state of 0 equals ground potential. 2. Vcc is inductively coupled to LNA Out pin and Vcc pin 3. Minimum logic state 1 for enable and gain pins is 1.25V 4. Maximum logic state 0 for enable and gain pins is 0.8V Table 4 lists the electrical characteristics associated with noise performance measured in a 50 Ω system. Additional noise parameters are listed in Table 15 and Table 16. Also listed are the typical Icc and RF turn on times for the device. Information and details on the boards are shown in Section 4, “Printed Circuit and Bill of Materials.” Table 4. Electrical Characteristics (Vcc = 2.75 V, Ta = 25°C) Characteristic Symbol Min Typ Max 17.4 18.9 — 14.5 16 — R1=1.5 kΩ, Freq=1.575 GHz 16.4 17.9 — R1=1.5 kΩ, Freq=2.14 GHz 14.9 16.4 — 21.1 22.6 — 19.6 21.1 — R1=1.5 kΩ, Freq=1.575 GHz 19 20.5 — R1=1.5 kΩ, Freq=2.14 GHz 18.1 19.6 — — 0.97 1.3 Unit Insertion Gain R1=1.2 kΩ, Freq=1.575 GHz R1=1.2 kΩ, Freq=2.14 GHz |S21| 2 dB Maximum Stable Gain and/or Maximum Available Gain [Note1] R1=1.2 kΩ, Freq=1.575 GHz R1=1.2 kΩ, Freq=2.14 GHz MSG, MAG dB Minimum Noise Figure R1=1.2 kΩ, Freq=1.575 GHz R1=1.2 kΩ, Freq=2.14 GHz — 1.07 1.4 R1=1.5 kΩ, Freq=1.575 GHz NFmin — 0.98 1.3 R1=1.5 kΩ, Freq=2.14 GHz — 1.1 1.4 dB MC13851 Advance Information, Rev. 2.0 4 Freescale Semiconductor Electrical Specifications Table 4. Electrical Characteristics (Vcc = 2.75 V, Ta = 25°C) Characteristic Symbol Min Typ Max 20.5 22 — 17 18.6 — R1=1.5 kΩ, Freq=1.575 GHz 20.5 22 — R1=1.5 kΩ, Freq=2.14 GHz 17.5 19 — Icc rise time from 0 to 76% of final current level — 6.4 — Icc rise time from 0 to 87% of final current level — 9.6 — RF on time from leading edge of enable trigger to RF turn-on — 1.37 — Unit Associated Gain at Minimum Noise Figure R1=1.2 kΩ, Freq=1.575 GHz R1=1.2 kΩ, Freq=2.14 GHz Gnf dB Icc and RF Turn On Time Enable trigger total time of 1.8 μsecond from 0 to 2.75 V μs Note: Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows: MAG = |S21/S12(K ±sqrt(K2-1)) |, if K>1, MSG = |S21/S12|, if K 18 dB and OIP3 of 16 dBm. Two values of bias resistor R1 are shown to demonstrate performance for different IP3 and Icc requirements. Resistor R3 is used to de-Q output inductor L2 and adjust gain and return losses. Inductor L3 provides bias to the logic circuit. Reducing R3 lowers gain and improves return losses. Typical performance that can be expected from this circuit at 2.75 V is listed in Table 7. Figure 8 is the 1960 MHz application schematic with package pinouts and the circuit component topology. C1 2.4 pF L1 5.1 nH 5 RF IN 4 7 Gain Enable 6 Enable Gnd 3 R1 1.2 k R2 10 Rbias C2 0.9 pF RF OUT 2 Logic Gain R3 620 L2 3.3 nH 1 8 L3 2 70 nH Gnd Vcc C4 .01 uF C3 33 pF Figure 8. 1960 MHz Application Schematic Table 7 shows the electrical characteristics for the 1960 MHz evaluation board. Table 7. Typical 1960 MHz Evaluation Board Performance (Vcc = 2.75V, Ta = 25°C) Characteristic Symbol Min Typ Max Unit f — 1960 — MHz G 17.7 18.7 — dB -6.5 -4.9 — 14 16 — 19.2 20.9 — R1=1.2 KΩ Frequency RF Gain High Gain Bypass Output Third Order Intercept Point High Gain Bypass OIP3 dBm MC13851 Advance Information, Rev. 2.0 12 Freescale Semiconductor Application Information Table 7. Typical 1960 MHz Evaluation Board Performance (continued) (Vcc = 2.75V, Ta = 25°C) Characteristic Symbol Min Typ Max Unit IIP3 -4 -2.7 — dBm 24.5 26 — 6 8 — -13 -10.5 — — 1.37 1.65 — 4.8 6.2 Input Third Order Intercept Point High Gain Bypass Out Ref P1dB P1dBout High Gain In Ref P1dB P1dBin High Gain dBm dBm Noise Figure High Gain NF Bypass dB Current Draw High Gain Icc Bypass Rbias R1 Value — — 4.8 5.8 mA — 4 20 μA — 1.2 — kΩ dB Input Return Loss High Gain S11 — -10 -7 — -11 -8 17.4 18.4 — -6.5 -5 — — -25 -23.5 — -4.8 -3 — -14 -8 — -14.8 -10 f — 1960 — G 17.5 18.5 — -6.8 -5 — 16.1 17.1 — 19.1 20.9 — -3 -1.5 — 24.5 26 — Bypass Gain High Gain S21 Bypass dB Reverse Isolation High Gain S12 Bypass dB Output Return Loss High Gain S22 Bypass dB R1=1.5 kΩ Frequency MHz RF Gain High Gain Bypass dB Output Third Order Intercept Point OIP3 High Gain Bypass dBm Input Third Order Intercept Point High Gain Bypass IIP3 dBm MC13851 Advance Information, Rev. 2.0 Freescale Semiconductor 13 Application Information Table 7. Typical 1960 MHz Evaluation Board Performance (continued) (Vcc = 2.75V, Ta = 25°C) Characteristic Symbol Out Ref P1dB Min Typ Max 5.6 8 — -13 -10.5 — — 1.35 1.65 — 4.9 6.2 — 3.8 4.8 mA — 4 20 μA — — 1.5 — kΩ S11 — -9 -6.5 dB — -11 -8 17 18 — -6.5 -5 — — -24.5 -22.5 — -4.5 -4 — -12.5 -7 — -15 -10 P1dBout High Gain In Ref P1dB P1dBin High Gain Unit dBm dBm Noise Figure NF High Gain Bypass dB Current Draw Icc High Gain Bypass Rbias R1 Value Input Return Loss High Gain Bypass Gain S21 High Gain Bypass dB Reverse Isolation S12 High Gain Bypass dB Output Return Loss S22 High Gain Bypass 3.3 dB 2140 MHz Application These application circuits demonstrate performance at 2140 MHz. Matching component values can be changed to enhance a particular parameter. Typical performance expected from this circuit at 2.75V Vcc is listed in Table 8. Two values of bias resistor R1 are shown to demonstrate performance for different IP3 and Icc requirements. The same matching topology is used on each of the application circuits, with a highpass match on the output and a simple inductor-capacitor network on the LNA input. Resistor R3 is used to de-Q output inductor L2 and adjust gain and return losses. Lowering the value of R3 lowers gain and improves return losses. MC13851 Advance Information, Rev. 2.0 14 Freescale Semiconductor Application Information Figure 9 is the 2140 MHz application schematic with package pinouts and the circuit component topology. C1 2.4 pF L1 4.7 nH 5 RF IN 4 7 Gain Enabl e 6 Enable Gnd 3 R1 1.2 k R2 10 Rbias C2 0.9 pF RF OUT 2 Logic Gain R3 620 L2 2.7 nH 1 8 L3 270 nH Gnd Vcc C4 .01 uF C3 33 pF Figure 9. 2140 MHz Application Schematic Table 8 shows the electrical characteristics for the 2140 MHz evaluation board. Table 8. Typical 2140 MHz Evaluation Board Performance (Vcc = 2.75V, Ta = 25°C) Characteristic Symbol Min Typ Max Unit f — 2140 — MHz G 16.7 17.7 — -5.8 -4.8 — 15.5 17.1 — 20 21 — -3 -0.5 — 24.5 25.7 — 6.7 8 — -11 -9.6 — — 1.46 1.75 — 4.9 5.9 — 4.8 5.8 mA — 4 20 μA — 1.2 — kΩ R1=1.2 KΩ (Refer to Figure 9) Frequency RF Gain High Gain Bypass dB Output Third Order Intercept Point High Gain OIP3 Bypass dBm Input Third Order Intercept Point High Gain IIP3 Bypass Out Ref P1dB High Gain In Ref P1dB High Gain P1dB P1dB dBm dBm dBm Noise Figure High Gain NF Bypass dB Current Draw High Gain Icc Bypass Rbias R1 Value — MC13851 Advance Information, Rev. 2.0 Freescale Semiconductor 15 Application Information Table 8. Typical 2140 MHz Evaluation Board Performance (continued) (Vcc = 2.75V, Ta = 25°C) Characteristic Symbol Min Typ Max Unit S11 — -10.5 -7 dB — -13.5 -10 16.5 17.6 — -5.7 -4.7 — — -24.7 -23.7 — -4.5 -4 — -11 -8 — -20.8 -10 f — 2140 — MHz G 16.4 17.4 — dB -5.8 -4.8 — 16 18 — 19.5 21 — -2 0.9 — 24.7 25.7 — 7 8 — -10.3 -9.3 — — 1.46 1.75 — 4.7 5.3 Input Return Loss High Gain Bypass Gain High Gain S21 Bypass dB Reverse Isolation High Gain S12 Bypass dB Output Return Loss High Gain S22 Bypass dB R1=1.5 KΩ (Refer to Figure 9) Frequency RF Gain High Gain Bypass Output Third Order Intercept Point High Gain OIP3 Bypass dBm Input Third Order Intercept Point High Gain IIP3 Bypass Out Ref P1dB High Gain In Ref P1dB High Gain P1dB P1dB dBm dBm dBm Noise Figure High Gain NF Bypass dB Current Draw High Gain Icc Bypass Rbias R1 Value — — 3.8 4.8 mA — 4 20 μA — 1.5 — kΩ — -9.6 -8 dB — -13 -9 Input Return Loss High Gain Bypass S11 MC13851 Advance Information, Rev. 2.0 16 Freescale Semiconductor Application Information Table 8. Typical 2140 MHz Evaluation Board Performance (continued) (Vcc = 2.75V, Ta = 25°C) Characteristic Symbol Min Typ Max Unit S21 16.5 17.4 — dB -5.4 -4.7 — — -24 21.6 — -4.6 4.1 — -10.6 -8 — -21 -10 Gain High Gain Bypass Reverse Isolation High Gain S12 Bypass dB Output Return Loss High Gain S22 Bypass 3.4 dB 2400 MHz Application This application was designed to provide NF =1.5 dB, S21 gain > 16 dB, OIP3 of 17.5 dBm with return losses better than -9 dB at 2400 MHz. Typical performance that can be expected from this circuit at 2.7V is listed in Table 9. Two values of bias resistor R1 are shown to demonstrate performance for different IP3 and Icc requirements. Resistor R3 is used to de-Q output inductor L2 and adjust gain and return losses. Lowering the value of R3 lowers gain and improves return losses. Figure 9 is the 2400 MHz application schematic with package pinouts and the circuit component topology. Figure 10. 2400 MHz Application Schematic MC13851 Advance Information, Rev. 2.0 Freescale Semiconductor 17 Application Information Table 9 shows the electrical characteristics for the 2400 MHz evaluation board. Table 9. Typical 2400 MHz Evaluation Board Performance (Vcc = 2.75V, Ta = 25°C) Characteristic Symbol Min Typ Max Unit R1=1.2 KΩ (Refer to Figure 10) Frequency f 2400 MHz RF Gain High Gain G Bypass 15 16 — -5.5 -5 — 16 17.5 — 18.5 20 — dB Output Third Order Intercept Point High Gain OIP3 Bypass dBm Input Third Order Intercept Point High Gain IIP3 -0.2 1.3 — 24 25.3 — 7 8.1 — -9 -8 — — 1.51 1.8 — 5.2 5.8 — 4.8 5.8 mA — 4 20 μA — — 1.2 — kΩ S11 — -12.5 -9 dB — -14 -10 14.7 15.7 — -5.4 -5 — — -23.6 -22.6 — -5.5 -4.5 — -12 -9 — -22.5 -20 Bypass Out Ref P1dB High Gain In Ref P1dB High Gain P1dB P1dB dBm dBm dBm Noise Figure High Gain NF Bypass dB Current Draw High Gain Icc Bypass Rbias R1 Value Input Return Loss High Gain Bypass Gain High Gain S21 Bypass dB Reverse Isolation High Gain S12 Bypass dB Output Return Loss High Gain Bypass S22 dB MC13851 Advance Information, Rev. 2.0 18 Freescale Semiconductor Application Information Table 9. Typical 2400 MHz Evaluation Board Performance (continued) (Vcc = 2.75V, Ta = 25°C) Characteristic Symbol Min Typ Max Unit f — 2400 — MHz G 14.9 15.9 — dB -6 -5 — 16 18 — 19.2 20.4 — R1=1.5 KΩ (Refer to Figure 10) Frequency RF Gain High Gain Bypass Output Third Order Intercept Point High Gain OIP3 Bypass dBm Input Third Order Intercept Point High Gain IIP3 -0.2 2 — 24.3 25.3 — 7 7.9 — -8.8 -7.8 — — 1.52 1.8 — 5.2 6 — 3.8 4.8 mA — 4 20 μA — — 1.5 — kΩ S11 — -10.7 -9 dB — -14.5 -12 14.4 15.4 — -6 -5.1 — — -23.3 -22 — -5.5 -4.5 — -11.3 -8.5 — -21.9 -15 Bypass Out Ref P1dB High Gain In Ref P1dB High Gain P1dB P1dB dBm dBm dBm Noise Figure High Gain NF Bypass dB Current Draw High Gain Icc Bypass Rbias R1 Value Input Return Loss High Gain Bypass Gain High Gain S21 Bypass dB Reverse Isolation High Gain S12 Bypass dB Output Return Loss High Gain Bypass S22 dB MC13851 Advance Information, Rev. 2.0 Freescale Semiconductor 19 Printed Circuit and Bill of Materials 4 Printed Circuit and Bill of Materials Figure 11 is the drawing of the printed circuit board. Figure 13 is the drawing of the evaluation board used for each of the application frequency designs described in Section 3, “Application Information.” These drawings show the boards with the circuit matching components placed and identified. Note: Dimensions are in inches and [mm]. Soldering Note: The center flag under the part must be soldered to board. Figure 11. Printed Circuit Board Figure 11 is a picture of a typical assembled evaluation board similar to the ones in the evaluation kits. Figure 12. Typical Assembled Evaluation Board with SMA Connectors MC13851 Advance Information, Rev. 2.0 20 Freescale Semiconductor Printed Circuit and Bill of Materials Figure 13. 1575-, 1960-, 2140-, 2400 MHz Application Board The bill of materials for each of the application frequency circuit boards is listed in Table 10. The value, case size, manufacturer and circuit function of each component are shown. Table 10. Bill of Materials for the Application Circuit Boards Component Value Case Manufacturer Comments 1575 MHz Application Circuit (see Figure 7) C1 22 pF 402 Murata DC block, input match C2 1 pF 402 Murata DC block, output match C3 33 pF 402 Murata RF bypass C4 0.1 μF 402 Murata Low frequency bypass L1 4.7 nH 402 Murata Input match L2 5.1 nH 402 Murata Output match, bias decouple L3 270 nH 402 Murata Bias couple to logic R1 1.2 kΩ 402 KOA R2 10 Ω 402 KOA Stability R3 150 Ω 402 KOA L2 de-Q, gain adjust Bias set point 1900 MHz Application Circuit (see Figure 8) C1 2.4pF C2 0.9 pF C3 33 pF C4 .01 μF L1 402 Murata Input match 402 Murata Output match 402 Murata RF bypass 805 Murata Low frequency bypass 5.1 nH 402 Murata Input match L2 3.3 nH 402 Murata Output match L3 270 nH 402 Murata Bias couple to logic R1 1.2 kΩ 402 KOA LNA bias R2 15 Ω 402 KOA Stability R3 620 402 KOA De-Q L2, adjust gain, RLs MC13851 Advance Information, Rev. 2.0 Freescale Semiconductor 21 Scattering and Noise Parameters Table 10. Bill of Materials for the Application Circuit Boards (continued) Component Value Case Manufacturer Comments 2140 MHz Application Circuit (see Figure 9) C1 2.4pF 402 Murata Input match C2 0.9 pF 402 Murata Output match C3 33 pF 402 Murata RF bypass C4 .01 μF 805 Murata Low frequency bypass L1 4.7 nH 402 Murata Input match L2 2.7 402 Murata Output match L3 270 nH 402 Murata Bias couple to logic R1 1.2 kΩ 402 KOA R2 10 Ω 402 KOA Stability R3 620 402 KOA De-Q L2, adjust gain, RLs LNA bias 2400 MHz Application Circuit (see Figure 10) 5 C1 2.4pF C2 0.9 pF C3 33 pF C4 .01 μF L1 402 Murata Input match 402 Murata Output match 402 Murata RF bypass 805 Murata Low frequency bypass 3.6 nH 402 Murata Input match L2 2 402 Murata Output match L3 270 nH 402 Murata Bias couple to logic R1 1.2 kΩ 402 KOA LNA bias R2 10 Ω 402 KOA Stability R3 620 402 KOA De-Q L2, adjust gain, RLs Scattering and Noise Parameters Table 11 through Table 14 list the S parameters for the packaged part in a 50 Ω system for each of the modes of operation and for two values of the external bias resistor. Table 11. Scattering Parameters, Active Mode, Rbias=1.2kΩ (Vcc = 2.75V, 25°C, 50 Ω system) S11 S21 S12 S22 f (MHz) Mag Ang Mag Ang Mag Ang Mag Ang 1000 0.712 -19.7 10.508 145.3 0.027 94.1 0.913 9.6 1050 0.696 -20.3 10.318 144.3 0.029 94.3 0.904 10.0 1100 0.679 -21.2 10.132 143.1 0.030 94.8 0.896 10.5 1150 0.663 -21.7 9.947 142.2 0.031 94.8 0.886 10.7 1200 0.651 -21.9 9.742 141.0 0.033 95.1 0.875 10.8 1250 0.634 -22.2 9.552 140.2 0.034 95.6 0.870 11.0 1300 0.619 -22.4 9.413 139.3 0.035 96.4 0.861 11.2 MC13851 Advance Information, Rev. 2.0 22 Freescale Semiconductor Scattering and Noise Parameters Table 11. Scattering Parameters, Active Mode, Rbias=1.2kΩ (continued) (Vcc = 2.75V, 25°C, 50 Ω system) S11 S21 S12 S22 f (MHz) Mag Ang Mag Ang Mag Ang Mag Ang 1350 0.607 -22.9 9.242 138.3 0.036 97.3 0.854 11.5 1400 0.597 -23.3 9.069 138.0 0.038 98.5 0.851 11.6 1450 0.587 -23.6 8.977 137.0 0.040 99.3 0.847 11.4 1500 0.576 -23.9 8.813 136.2 0.042 100.3 0.845 11.1 1550 0.571 -24.4 8.806 135.9 0.044 101.5 0.846 10.2 1600 0.571 -26.2 8.693 134.7 0.049 100.1 0.840 8.2 1650 0.556 -28.2 8.583 133.0 0.050 97.4 0.802 7.2 1700 0.538 -29.7 8.420 131.8 0.051 96.5 0.779 7.4 1750 0.519 -31.3 8.284 130.8 0.052 96.4 0.764 7.2 1800 0.505 -33.5 8.129 129.5 0.054 96.1 0.751 6.8 1850 0.486 -35.7 8.009 128.3 0.057 95.2 0.737 5.6 1900 0.448 -37.5 7.735 126.4 0.058 91.7 0.700 5.2 1950 0.435 -37.8 7.564 126.2 0.058 92.2 0.688 5.5 2000 0.415 -41.7 7.421 124.4 0.061 90.4 0.662 4.1 2050 0.376 -45.4 7.155 122.5 0.063 86.6 0.618 3.7 2100 0.313 -44.8 6.708 121.6 0.059 80.1 0.569 6.2 2150 0.28 -37.0 6.321 121.8 0.052 79.7 0.541 11.7 2200 0.251 -29.5 5.956 125.2 0.044 78.1 0.561 18.1 2250 0.309 -16.2 6.073 130.1 0.037 100.5 0.648 20.3 2300 0.367 -24.7 6.554 129.3 0.050 110.1 0.694 14.8 2350 0.364 -30.5 6.756 126.9 0.058 108.1 0.678 9.3 2400 0.351 -35.0 6.542 124.4 0.062 104.0 0.648 8.3 2450 0.338 -37.9 6.459 122.8 0.065 102.4 0.627 7.8 2500 0.323 -40.5 6.304 121.6 0.066 100.3 0.613 8.1 2550 0.319 -41.4 6.168 120.6 0.067 100.7 0.608 8.1 2600 0.308 -43.6 6.047 119.6 0.068 99.4 0.606 7.1 Table 12. Scattering Parameters, Active Mode, Rbias=1.5kΩ (Vcc = 2.75V, 25°C, 50 Ω system) S11 S21 S12 S22 f (MHz) Mag Ang Mag Ang Mag Ang Mag Ang 1000 0.754 -17.9 9.171 150.9 0.028 94.9 0.941 10.7 1050 0.739 -18.6 9.055 149.8 0.029 95.2 0.933 11.1 1100 0.721 -19.4 8.902 148.7 0.031 95.0 0.927 11.7 1150 0.709 -19.9 8.774 147.9 0.032 95.4 0.918 11.8 1200 0.698 -20.3 8.629 146.8 0.033 95.6 0.910 12.0 1250 0.682 -20.6 8.517 146.2 0.035 96.3 0.907 12.2 MC13851 Advance Information, Rev. 2.0 Freescale Semiconductor 23 Scattering and Noise Parameters Table 12. Scattering Parameters, Active Mode, Rbias=1.5kΩ (continued) (Vcc = 2.75V, 25°C, 50 Ω system) S11 S21 S12 S22 f (MHz) Mag Ang Mag Ang Mag Ang Mag Ang 1300 0.667 -21.2 8.444 145.1 0.036 96.3 0.897 12.2 1350 0.654 -21.9 8.318 144.0 0.037 96.4 0.888 12.4 1400 0.640 -22.5 8.150 143.8 0.039 97.1 0.884 12.6 1450 0.625 -22.8 8.093 142.6 0.040 97.3 0.876 12.6 1500 0.611 -23.0 7.908 141.9 0.041 97.6 0.871 12.6 1550 0.595 -23.1 7.910 141.3 0.043 98.2 0.863 12.2 1600 0.591 -23.1 7.668 140.8 0.044 98.5 0.861 11.8 1650 0.586 -24.0 7.619 139.9 0.046 99.0 0.841 11.5 1700 0.577 -25.1 7.505 139.2 0.048 99.0 0.829 11.8 1750 0.560 -26.7 7.410 138.5 0.049 99.1 0.821 11.9 1800 0.548 -28.0 7.283 137.6 0.050 99.4 0.813 11.7 1850 0.528 -28.8 7.154 136.9 0.052 99.6 0.807 11.5 1900 0.513 -28.8 7.006 136.3 0.053 98.7 0.794 11.4 1950 0.509 -29.0 6.929 136.3 0.054 99.8 0.789 11.5 2000 0.500 -31.2 6.861 135.6 0.056 100.1 0.781 11.1 2050 0.489 -32.4 6.832 134.8 0.058 101.1 0.773 10.7 2100 0.475 -33.9 6.707 134.5 0.060 100.5 0.770 10.2 2150 0.467 -34.2 6.660 133.1 0.062 101.1 0.750 9.6 2200 0.454 -37.8 6.588 133.3 0.063 99.6 0.745 9.2 2250 0.436 -39.4 6.538 132.1 0.065 100.1 0.730 8.6 2300 0.409 -41.7 6.508 130.5 0.066 98.0 0.714 8.4 2350 0.390 -40.9 6.467 129.7 0.067 98.2 0.693 7.3 2400 0.378 -41.5 6.181 128.3 0.067 97.2 0.671 8.6 2450 0.369 -42.2 6.079 127.5 0.068 97.5 0.659 9.7 2500 0.359 -43.2 5.945 126.8 0.068 97.6 0.651 10.7 2550 0.356 -44.0 5.825 126.3 0.069 97.8 0.652 11.4 2600 0.348 -44.7 5.680 125.7 0.069 98.1 0.652 11.9 Table 13. Scattering Parameters, Bypass Mode, Rbias=1.2kΩ and 1.5kΩ (Vcc = 2.75V, 25°C, 50 Ω system) S11 S21 S12 S22 f (MHz) Mag Ang Mag Ang Mag Ang Mag Ang 1000 0.356 -25.9 0.658 25.8 0.646 25.2 0.402 -12.4 1050 0.340 -24.6 0.663 24.9 0.651 24.3 0.387 -11.3 1100 0.327 -23.0 0.667 24.0 0.655 23.5 0.373 -9.9 1150 0.312 -21.4 0.671 23.3 0.659 22.7 0.359 -8.2 1200 0.298 -20.3 0.674 22.6 0.662 22.0 0.347 -6.5 MC13851 Advance Information, Rev. 2.0 24 Freescale Semiconductor Scattering and Noise Parameters Table 13. Scattering Parameters, Bypass Mode, Rbias=1.2kΩ and 1.5kΩ (continued) (Vcc = 2.75V, 25°C, 50 Ω system) S11 S21 S12 S22 f (MHz) Mag Ang Mag Ang Mag Ang Mag Ang 1250 0.288 -18.7 0.677 21.8 0.665 21.4 0.336 -4.7 1300 0.275 -16.7 0.678 21.2 0.667 20.7 0.326 -3.4 1350 0.263 -14.8 0.679 20.6 0.668 20.1 0.318 -1.9 1400 0.253 -12.6 0.678 20.0 0.667 19.6 0.311 -0.7 1450 0.248 -10.0 0.675 19.9 0.664 19.5 0.306 -0.3 1500 0.250 -9.6 0.680 20.0 0.669 19.6 0.289 0.9 1550 0.244 -10.4 0.687 19.5 0.676 19.1 0.279 2.1 1600 0.235 -10.0 0.689 18.9 0.678 18.5 0.272 3.7 1650 0.226 -10.2 0.690 18.5 0.680 18.0 0.267 4.9 1700 0.220 -9.5 0.690 17.8 0.680 17.3 0.260 6.3 1750 0.211 -8.5 0.689 17.4 0.679 17.0 0.253 6.9 1800 0.197 -6.2 0.685 16.9 0.675 16.4 0.245 6.8 1850 0.199 -1.7 0.682 17.3 0.673 16.9 0.235 7.3 1900 0.202 -3.2 0.688 17.0 0.679 16.6 0.229 8.5 1950 0.194 -5.0 0.688 16.5 0.678 16.1 0.223 9.4 2000 0.186 -4.4 0.687 16.1 0.677 15.8 0.213 8.4 2050 0.182 -3.6 0.682 16.2 0.673 15.8 0.204 8.1 2100 0.180 -4.2 0.686 16.3 0.676 15.9 0.198 9.5 2150 0.185 -4.3 0.689 16.2 0.680 15.9 0.192 11.2 2200 0.185 -5.5 0.695 15.7 0.685 15.4 0.186 10.4 2250 0.187 -8.3 0.695 15.2 0.685 14.9 0.185 9.3 2300 0.186 -10.1 0.697 14.6 0.688 14.3 0.178 7.5 2350 0.185 -12.0 0.694 14.2 0.685 13.8 0.173 7.0 2400 0.181 -14.1 0.696 13.7 0.686 13.4 0.168 4.1 2450 0.178 -16.8 0.695 13.1 0.681 12.5 0.159 2.0 2500 0.177 -19.8 0.694 12.5 0.680 11.9 0.155 -1.7 2550 0.174 -23.6 0.691 11.8 0.677 11.2 0.150 -5.6 2600 0.171 -27.4 0.686 11.2 0.673 10.6 0.143 -9.1 Table 14. Scattering Parameters, Standby Mode, Rbias=1.2kΩ and 1.5kΩ (Vcc = 2.75V, 25°C, 50 Ω system) S11 S21 S12 S22 f (MHz) Mag Ang Mag Ang Mag Ang Mag Ang 1000 0.939 2.1 0.031 104.0 0.031 103.1 0.991 12.9 1050 0.935 2.2 0.033 104.4 0.033 103.8 0.990 13.3 1100 0.934 2.5 0.035 104.8 0.034 104.2 0.988 13.5 1150 0.931 2.7 0.037 105.2 0.036 104.4 0.986 14.0 MC13851 Advance Information, Rev. 2.0 Freescale Semiconductor 25 Scattering and Noise Parameters Table 14. Scattering Parameters, Standby Mode, Rbias=1.2kΩ and 1.5kΩ (continued) (Vcc = 2.75V, 25°C, 50 Ω system) S11 S21 S12 S22 f (MHz) Mag Ang Mag Ang Mag Ang Mag Ang 1200 0.926 2.7 0.039 105.4 0.038 104.7 0.985 14.5 1250 0.924 2.6 0.041 105.8 0.040 105.2 0.982 15.0 1300 0.920 2.8 0.043 105.8 0.042 105.3 0.978 15.0 1350 0.914 2.9 0.045 106.1 0.044 105.5 0.977 15.2 1400 0.906 2.9 0.047 106.4 0.046 105.9 0.974 15.5 1450 0.896 3.3 0.048 106.9 0.048 106.2 0.973 15.7 1500 0.901 3.7 0.051 108.4 0.050 107.8 0.969 16.0 1550 0.907 3.3 0.054 108.6 0.053 107.9 0.965 15.9 1600 0.904 2.9 0.056 108.4 0.056 108.0 0.964 15.9 1650 0.900 2.4 0.059 108.8 0.058 108.3 0.959 16.1 1700 0.896 1.7 0.061 109.2 0.061 108.6 0.957 16.2 1750 0.886 1.3 0.064 109.7 0.063 109.2 0.954 16.1 1800 0.871 1.1 0.068 111.0 0.067 110.4 0.948 15.7 1850 0.859 2.3 0.074 109.8 0.073 109.4 0.946 15.7 1900 0.871 2.1 0.075 108.1 0.074 107.5 0.941 15.4 1950 0.866 1.0 0.078 109.2 0.076 108.7 0.935 15.3 2000 0.855 0.4 0.081 109.1 0.080 108.9 0.929 15.0 2050 0.843 0.5 0.086 110.1 0.085 109.8 0.923 14.3 2100 0.844 0.3 0.093 108.8 0.092 108.4 0.920 14.2 2150 0.848 -0.2 0.100 106.5 0.099 106.0 0.916 14.0 2200 0.853 -0.9 0.103 103.2 0.101 102.8 0.911 13.2 2250 0.853 -2.1 0.105 101.6 0.104 101.0 0.907 12.4 2300 0.850 -3.1 0.106 99.8 0.105 99.4 0.901 11.6 2350 0.844 -3.9 0.110 99.2 0.109 98.7 0.891 10.8 2400 0.838 -5.1 0.113 97.0 0.111 96.4 0.887 9.9 2450 0.829 -6.5 0.116 96.2 0.114 95.2 0.877 8.9 2500 0.820 -7.9 0.119 93.5 0.117 92.6 0.867 7.6 2550 0.807 -9.4 0.122 91.3 0.120 90.6 0.858 6.1 2600 0.791 -11.2 0.125 88.1 0.122 87.4 0.840 4.9 Table 15 provides the active mode noise parameters when the bias resistor is 1.2 kΩ. Table 15. Active Mode Noise Parameters, Rbias=1.2kΩ (Vcc = 2.75V, 25 0C, 50 Ω system, Icc=4.6 mA) Freq (MHz) Fmin (dB) Gamma Opt Rn Mag Angle Ga (dB) 1000 0.91 0.329 -8.8 14.0 27.42 1200 0.92 7.000 -7.3 13.5 25.09 MC13851 Advance Information, Rev. 2.0 26 Freescale Semiconductor Scattering and Noise Parameters Table 15. Active Mode Noise Parameters, Rbias=1.2kΩ (continued) (Vcc = 2.75V, 25 0C, 50 Ω system, Icc=4.6 mA) Freq (MHz) Fmin (dB) Gamma Opt Ga (dB) Rn Mag Angle 1500 0.96 0.279 -12.3 12.5 22.83 1700 0.99 0.244 -17.2 12 21.43 1900 1.02 0.206 -20.8 11.5 20.15 2000 1.04 0.186 -21.5 11.5 19.57 2100 1.06 0.167 -20.9 11.0 19.04 2400 1.13 0.114 -9.6 11.0 17.74 2500 1.15 0.100 -1.6 10.5 17.43 2600 1.18 0.087 8.8 10.5 17.18 Table 16 provides the active mode noise parameters when the bias resistor is 1.5 kΩ. Table 16. Active Mode Noise Parameters, Rbias=1.5kΩ (Vcc = 2.75V, 25°C, 50 Ω system, Icc=3.3 mA) Freq (MHz) Fmin (dB) Gamma Opt Rn Mag Angle Ga (dB) 1000 0.92 0.358 -8.3 14.5 26.42 1200 0.93 0.344 -8.7 14.0 24.84 1500 0.97 0.306 -12.5 13.5 22.78 1700 1.00 0.273 -15.2 13.0 21.59 1900 1.04 0.237 -16.6 12.0 20.53 2000 1.06 0.218 -16.4 12.0 20.03 2100 1.08 0.199 -15.4 12.0 19.57 2400 1.16 0.143 -5.5 11.5 18.30 2500 1.19 0.127 0.6 11.5 17.91 2600 1.23 0.111 8.3 11.5 17.53 MC13851 Advance Information, Rev. 2.0 Freescale Semiconductor 27 Scattering and Noise Parameters Figure 14 through Figure 21 are the constant noise figure and gain circles with input and output stability regions shown on Smith charts. Gamma opt, noise resistance and stability at the frequency are shown for two values of the external bias resistor at 1600-, 1950-, 2150- and 2400 MHz. Figure 14. Constant Noise Figure and Gain Circles, 1600 MHz, Rbias=1.2 kΩ Figure 15. Constant Noise Figure and Gain Circles, 1600 MHz, Rbias=1.5kΩ MC13851 Advance Information, Rev. 2.0 28 Freescale Semiconductor Scattering and Noise Parameters Figure 16. Constant Noise Figure and Gain Circles, 1960 MHz, Rbias=1.2 kΩ Figure 17. Constant Noise Figure and Gain Circles, 1960 MHz, Rbias=1.5kΩ MC13851 Advance Information, Rev. 2.0 Freescale Semiconductor 29 Scattering and Noise Parameters Figure 18. Constant Noise Figure and Gain Circles, 2140 MHz, Rbias=1.2 kΩ Figure 19. Constant Noise Figure and Gain Circles, 2140 MHz, Rbias=1.5kΩ MC13851 Advance Information, Rev. 2.0 30 Freescale Semiconductor Scattering and Noise Parameters Figure 20. Constant Noise Figure and Gain Circles, 2400 MHz, Rbias=1.2 kΩ Figure 21. Constant Noise Figure and Gain Circles, 2400 MHz, Rbias=1.5kΩ MC13851 Advance Information, Rev. 2.0 Freescale Semiconductor 31 Packaging 6 Packaging Figure 22 and Figure 22 are the package drawings with dimensions for the MLPD-8, 2 × 2 × 0.6 mm, package. DETAIL G (See Figure 23) Figure 22. Outline Dimensions for MLPD-8 MC13851 Advance Information, Rev. 2.0 32 Freescale Semiconductor Product Documentation Figure 23. Package Details 7 Product Documentation This data sheet is labeled as a particular type: Product Preview, Advance Information, or Technical Data. Definitions of these types are available at: http://www.freescale.com. 8 Revision History Table 17 summarizes revisions to this document since the previous release (Rev. 1). Table 17. Revision History Location Revision Throughout document Changed package from MLF8 to MLPD-8 Section 2, “Electrical Specifications Complete revision Section 3, “Application Information Complete update to Application Information Section 3.4, “2400 MHz Application New 2400 MHz content. Section 4, “Printed Circuit and Bill of Materials Complete update to MLPD-8 package. Section 5, “Scattering and Noise Parameters Added section and all content. 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