MC13853FCR2

MC13853FCR2

  • 厂商:

    NXP(恩智浦)

  • 封装:

    VFQFN16_EP

  • 描述:

    IC AMP LNA TRI-BAND P2.1 16-QFN

  • 数据手册
  • 价格&库存
MC13853FCR2 数据手册
Freescale Semiconductor Technical Data Document Number: MC13853 Rev. 1.8, 8/2008 MC13853 Package Information Plastic Package (QFN–16) MC13853 Tri-Band Low Noise Amplifiers with Bypass Switches 1 Introduction The MC13853 is a SPI controlled, tri-band, high gain LNA with extremely low noise figure, designed for cellular band applications. Integrated bypass switches are included to preserve input intercept performance. The input and output match are external to allow maximum design flexibility. The MC13853 is fabricated using Freescale's advanced RF BiCMOS process using the SiGe:C option and is packaged in the QFN-16 leadless package. 1.1 • • • • Ordering Information Device Device Marking or Operating Temperature Range Package MC13853 853 QFN-16 Contents 1 2 3 4 5 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Electrical Specifications . . . . . . . . . . . . . . . . 3 Application Information . . . . . . . . . . . . . . . . . 9 Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Product Documentation . . . . . . . . . . . . . . . . 25 Features RF input frequency: 800 MHz to 2.4 GHz Gain: 13.5 dB (typical) at 1960 MHz, 15 dB (typical) at 2140 MHz, and 13.5 dB (typical) at 880 MHz Input 3rd order intercept point (IIP3): -3 dBm (typical) at 880 MHz, -4.0 dBm (typical) at 1960 MHz, and -3.0 dBm (typical) at 2140 MHz Noise figure (NF): 1.5 dB (typical) at 880 MHz, 1.5 dB (typical) at 1960 MHz, and 1.6 dB (typical) at 2140 MHz This document contains information on a product under development. Freescale reserves the right to change or discontinue this product without notice. © Freescale Semiconductor, Inc., 2006 - 2008. All rights reserved. Introduction • • • • • • • • • Current Settings are SPI controllable Freescale’s IP3 boost circuitry Bypass mode included for improved intercept point performance Total supply current: LB – 9.7 mA in current setting 6 HB1 – 9.2 mA in current setting 6 HB2 – 6.5 mA in current setting 2 10 µA (typical) in bypass mode Bias stabilized for device and temperature variations QFN-16 leadless package with low parasitics SiGe technology ensures lowest possible noise figure SPI controlled At POR, all bands default to bypass mode. In deep sleep mode, all bands are set to disable mode. 800/900, 1800/1900 and 2100 MHz LNAs QFN16 16 pin 3 x 3 x 0.85 mm Package LB Emit 16 LB LNA OUT 15 GPO1 14 GPO2 13 LB 800/900 LNA IN 1 HB1 Emit 2 11 HB1 LNA OUT 3 10 HB2 LNA OUT HB1 1800/1900 LNA IN HB2 2100 LNA IN 12 Triband LNA Die 4 9 SPI 5 6 7 8 HB2 Emit SPI Data SPI Clk SPI Frm Vcc VDDauxSPI Figure 1. Simplified Block Diagram MC13853 Technical Data, Rev. 1.8 2 Freescale Semiconductor Electrical Specifications 2 Electrical Specifications Table 1. Maximum Ratings Ratings Symbol Value Unit Supply Voltage VCC 3.3 V Storage Temperature Range Tstg -65 to 150 °C Operating Ambient Temperature Range TA -30 to 85 °C RF Input Power Prf 10 dBm Power Dissipation Pdis 100 mW Thermal Resistance, Junction to Case RθJC 24 C/W Thermal Resistance, Junction to Ambient, 4 Layer Board RθJA 90 C/W ESD Rating HBM RF Pins 100 V ESD Rating HBM non-RF Pins 550 V NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Recommended Operating Conditions and Electrical Characteristics tables. Table 2. Recommended Operating Conditions Characteristic RF Frequency Range Supply Voltage Symbol Minimum fRF 800 VCC VDDauxSPI 2.6 1.5 1.25 0 Logic Voltage Input High Voltage Input Low Voltage Typical Maximum Unit 2400 MHz 2.775 1.8 3 2.1 V – – VCC 0.8 V NOTES: 1.Supply voltage Vcc must be on before VDDauxSPI. Table 3. Electrical Characteristics in Frequency Specific Tuned Circuits (VCC = 2.775 V, 25°C) Characteristic Symbol Minimum Typical Maximum Unit Frequency f 869 880 894 MHz Active Gain Band V Band VI G 12.5 12.5 13.5 13.5 14.5 14.5 Active Noise Figure NF – 1.4 1.5 dB Active Input Third Order Intercept Point IIP3 -3 -2.5 – dBm Active Input 1 dB Compression Point P1dB -9.5 -9 – dBm ICC – 8.6 10.2 mA 880 MHz (Refer to Figure 4) Active Current @ 2.75 V in current setting 6 dB MC13853 Technical Data, Rev. 1.8 Freescale Semiconductor 3 Electrical Specifications Table 3. Electrical Characteristics in Frequency Specific Tuned Circuits (continued) (VCC = 2.775 V, 25°C) Characteristic Bypass Gain Bypass Input Third Order Intercept Point Symbol Minimum Typical Maximum Unit G -10 -9.5 – dB IIP3 16 22 – dBm – 10 20 µA Bypass Current 950 MHz (Refer to Figure 5) Frequency f 925 950 960 MHz Active Gain G 11.0 12.0 13.0 dB Active Noise Figure NF – 1.45 1.5 dB Active Input Third Order Intercept Point IIP3 -3 -2.5 – dBm Active Input 1 dB Compression Point P1dB -9 -8.5 – dBm ICC – 8.6 10.2 mA G -10 -9.5 – dB IIP3 16 22 – dBm – 10 20 µA Active Current @ 2.75 V in current setting 6 Bypass Gain Bypass Input Third Order Intercept Point Bypass Current 1850 MHz (Refer to Figure 6) Frequency f 1805 1850 1880 MHz Active Gain G 12.5 13.5 14.5 dB Active Noise Figure NF – 1.55 1.6 dB Active Input Third Order Intercept Point IIP3 -3 -2.5 – dBm Active Input 1 dB Compression Point P1dB -12.5 -11.7 – dBm ICC – 7.8 9.7 mA G -9.5 -9 – dB IIP3 16 22 – dBm – 10 20 µA Active Current @ 2.75 V in current setting 6 Bypass Gain Bypass Input Third Order Intercept Point Bypass Current 1960 MHz (Refer to Figure 7) Frequency f 1930 1960 1990 MHz Active Gain G 12.5 13.5 14.5 dB Active Noise Figure NF – 1.55 1.6 dB Active Input Third Order Intercept Point IIP3 -3 -2.5 – dBm Active Input 1 dB Compression Point P1dB -12.5 -12 – dBm ICC – 7.8 9.7 mA G -9.5 -9 – dB IIP3 20 22 – dBm – 10 20 µA Active Current @ 2.75 V in current setting 6 Bypass Gain Bypass Input Third Order Intercept Point Bypass Current MC13853 Technical Data, Rev. 1.8 4 Freescale Semiconductor Electrical Specifications Table 3. Electrical Characteristics in Frequency Specific Tuned Circuits (continued) (VCC = 2.775 V, 25°C) Characteristic Symbol Minimum Typical Maximum Unit Frequency f 2110 2140 2170 MHz Active Gain G 14 15 16 dB Active Noise Figure NF – 1.55 1.6 dB Active Input Third Order Intercept Point IIP3 -3 -2.5 – dBm Active Input 1 dB Compression Point P1dB -12 -11 – dBm ICC – 6.0 7.0 mA G -6.5 -6 – dB IIP3 20 22 – dBm – 10 20 µA 2140 MHz (Refer to Figure 8) Active Current @ 2.75 V in current setting 2 Bypass Gain Bypass Input Third Order Intercept Point Bypass Current Table 4. Electrical Characteristics Over Temperature (-30°C to 85°C) Characteristic Symbol High Gain Mode Current Minimum Maximum Icc mA LNA1 HB2 – 8.3 LNA2 HB1 – 11.5 LNA3 LB – 10.2 Bypass Mode Current Icc Active Gain Variation Across Temperature G 30 -1.0 +0.5 -30°C relative to 25°C -0.5 +1.0 G dB 85°C relative to 25°C -1.0 +0.5 -30°C relative to 25°C -0.5 +1.0 NF Active Input Third Order Intercept relative to 25°C IIP3 µA dB 85°C relative to 25°C Noise Figure relative to 25°C Unit -2.0 +0.4 dB – dBm MC13853 Technical Data, Rev. 1.8 Freescale Semiconductor 5 Electrical Specifications Table 5. Truth Table for SPI Operation Mode Gain Bit Enable Bit Active 1 1 Bypass Gain 0 0 Disable 1 0 Not Used 0 1 Note: At power on reset (POR), the mode is set to bypass gain on all LNAs. Table 6. SPI Programmable Current Draw (25°C) SPI bit Typical Current (mA) Current 0 LNA 1 HB2 LNA 2 HB1 LNA3 LB Current Setting Current 2 Current 1 0 0 0 7.4 8.0 8.6 0 0 0 1 4.4 4.5 5.0 1 0 1 0 5.3 5.6 6.2 2 0 1 1 9.1 9.8 10.8 3 1 0 0 1.8 2.2 2.0 4 1 0 1 6.2 6.5 7.2 5 1 1 0 7.1 7.7 8.3 6 1 1 1 9.8 11.0 11.9 7 Default current setting shown in gray for each band Table 7. Maximum Current 25°C -30°C to 85°C Unit Deep Sleep Mode - Vcc on and VDDauxSPI off 1 5 µA VDDauxSPI during a read operation 400 400 µA MC13853 Technical Data, Rev. 1.8 6 Freescale Semiconductor Electrical Specifications SPI bit word 16 17 Bit # 29 21 1 20 0 19 0 18 17 16 15 14 13 Device is Iota LNA Selector PA4 LNA Selector PA3 LNA Selector PA2 LNA Selector PA1 LNA Selector PA0 0 0 0 1 0 0 1 0 0 1 0 0 Not Variable Write / Read Bit Variable 28 1 27 0 26 1 25 0 24 0 23 0 22 0 Write 0 Read 1 LNA Selector LNA1 HB2 LNA2 HB1 LNA3 LB GPO (Ext LNA) Active Mode Selector Bypass Disable Not Used Current Selector LNA1 HB2 (default) LNA2 HB1 LNA3 LB 18 19 20 21 Data Structure 12 11 10 9 22 23 24 25 26 27 28 29 30 8 7 6 5 4 3 2 1 0 Gain 15 Enable 14 Current 0 13 Current 1 12 Current 2 11 Device is Iota 10 Device is Iota 9 Device is Iota 8 Device is Iota 7 Device Type is LNA 6 Device Type is LNA 1 2 3 4 5 Address structure Device Type is LNA Clock 1 0 0 1 1 0 1 0 SPI Data 1 1 1 0 0 0 GPO1 Active Bypass Disable Disable GPO2 Mode Selector for GPO (External LNA) 0 1 1 1 1 0 0 1 0 0 1 3 2 Read Mode Not Variable Address structure 29 28 27 26 25 1 0 1 0 24 0 23 0 22 0 21 1 20 0 19 0 18 17 16 Variable SPI Data Read 1 LNA Selector For Hardware Read 0 1 1 one extra clock cycle in read mode Bit # 15 14 13 Data Structure 12 11 10 9 8 7 6 5 4 1 0 HID HID HID HID HID HID HID HID HID 8 7 6 5 4 3 2 1 0 Figure 2. SPI Bit Word MC13853 Technical Data, Rev. 1.8 Freescale Semiconductor 7 Electrical Specifications Table 8. SPI Used for Dual-, Tri-, and Quad-Band Configurations SPI Inputs LNA Selector PATH # Dual- or Tri-band Tri-band LNA #1 Config Bit Bit PA2 PA1 PA0 22 21 Enable Gain D2 D1 1 0 1 0 0 0 1 1 1 0 1 0 0 0 0 0 1 0 1 0 0 0 0 2 0 1 0 0 1 2 0 1 0 0 2 0 1 0 3 0 1 3 0 3 0 Outputs GPO1 GPO2 Mode No Connect No Connect LNA1 Active 1 LNAs 1, 2, and 3 No Connect No Connect LNA1 Bypass or LNAs 1 and 2 No Connect No Connect LNA1 Off 1 1 No Connect No Connect LNA2 Active 1 0 0 No Connect No Connect LNA2 Bypass 0 1 0 1 No Connect No Connect LNA2 Off 0 1 0 1 1 No Connect No Connect LNA3 Active 1 0 1 0 0 0 No Connect No Connect LNA3 Bypass 1 0 1 0 0 1 No Connect No Connect LNA 3 Off Note: This is an SPI-controlled, tri-band MC13853 LNA. Quadband Config Tri-band LNA #1 Single LNA 1 0 1 0 0 0 1 1 To Ext LNA To Ext LNA LNA1 Active To Ext LNA LNAs 1, 2, 3, and To Ext LNA LNA1 Bypass 4 1 0 1 0 0 0 0 0 1 0 1 0 0 0 0 1 To Ext LNA To Ext LNA LNA1 Off 2 0 1 0 0 1 1 1 To Ext LNA To Ext LNA LNA2 Active 2 0 1 0 0 1 0 0 To Ext LNA To Ext LNA LNA2 Bypass 2 0 1 0 0 1 0 1 To Ext LNA To Ext LNA LNA2 Off 3 0 1 0 1 0 1 1 To Ext LNA To Ext LNA LNA3 Active 3 0 1 0 1 0 0 0 To Ext LNA To Ext LNA LNA3 Bypass 3 0 1 0 1 0 0 1 To Ext LNA To Ext LNA LNA3 Off 4 0 1 1 0 0 1 1 NA NA LNA4 Active 4 0 1 1 0 0 1 0 NA NA LNA4 Bypass 4 0 1 1 0 0 0 0 NA NA LNA4 Off Note: This is one SPI-controlled, tri-band MC13853 LNA and one external LNA (not a MC13853) controlled by GPO from the MC13853 LNA. The different banding LNA combinations are: • Dual band (using one MC13853) • Tri-band (using one MC13853) • Quad-band (using one MC13853 and one single-band GPO-controlled external LNA (not a MC13853)) MC13853 Technical Data, Rev. 1.8 8 Freescale Semiconductor Application Information 3 Application Information The MC13853 SiGe:C LNA is designed for applications in the 800 MHz to 2.1 GHz range. It has three different modes: High Gain, Low Gain (Bypass) and Disabled. The IC mode is programmable through the Gain and Enable bits. The current setting is also SPI programmable. The logic truth table is given in Table 5. In these application examples a balance is made between the competing RF performance characteristics of ICC, NF, gain, IP3 and return losses with unconditional stability. Conjugate matching is not used for the input or output. Instead, matching which achieves a trade-off in RF performance qualities is utilized. For a particular application or spec requirement, the matching can be changed to achieve enhanced performance of one parameter at the expense of other parameters. Application information for 880, 950, 1800, 1960, and 2140 MHz are shown. Measurements are made at a bias of VCC = 2.775 V. Freq. spacing for IP3 measurements is 800 kHz for 2G and 10 MHz for 3GPP. The board loss corrections for these boards are: Input 0.16 dB, Output 0.2 dB. NF results incorporate these corrections in order to better reflect the actual performance of the device. Two MC13853 devices can also be used with common SPI control lines for a quad-band application, as shown in Figure 3. In this application, LB and HB1 are used on LNA1 and HB2 is used on LNA2. In active mode, both LNAs are active, but only one is connected in the circuit. Depending on which band is selected in the connected LNA, the corresponding un-connected LNA which would also become active when the SPI command is sent to the connected LNA will draw
MC13853FCR2 价格&库存

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