MC33486DH

MOTOROLA Freescale Semiconductor, Inc. Order Number: MC33486/D Rev. 3.3, 06/2001 Semiconductor Technical Data Advance Information Freescale Semiconductor, Inc... Dual High Side Switch for H-Bridge Automotive Applications This device is a dual high side switch for automotive applications which incorporates a dual low side switch control feature. This device is designed to monitor two low side switches for typical DC-motor control in an H-Bridge configuration. It can be directly interfaced with a microcontroller for control and diagnostic functions, is PWM capable and has a self-adjusted switching speed for minimizing electromagnetic emission. The High Side block incorporates two 15mΩ Rdson N-Channel power Mosfets with senses and a control circuitry. Each output of this high side block is protected against short to gnd and load shorts, and has over temperature detection with hysteresis. It includes a current recopy feature for monitoring the load current. The control circuitry also has an overvoltage detector which turns off the bridge and protects the load in case of Vbat exceeding 28V. The low side control block is able to drive 2 low sides switches in a H-bridge configuration and protects them in case of short circuit. This, in combination with the High side protection, fully protects the H-bridge from shorted loads, shorts to Vbat and shorts to GND. This device offers a very low quiescent current in standby mode. •10 Amps Nominal DC Current •35 Amps Maximum Peak Current •DC Voltage from -0.3V to 40V •Operating Voltage from 8 to 28V •Overvoltage Detection : Switch Off when Vbat Exceed 28V •High Side and Low Side Overcurrent protection •Operating Junction Temperature - 40°C to 150°C •Rdson 15mΩ max at 25C° per Mosfet •DC to 30kHz PWM Capability •Standby Mode with Low Standby Current •Junction to Case Thermal Resistance : 2°C/W •ESD protection 2kV •Current Recopy to Monitor the High-Side Current •Common diagnostic output MC33486 DUAL HIGH SIDE SWITCH FOR H-BRIDGE AUTOMOTIVE APPLICATIONS SEMICONDUCTOR TECHNICAL DATA DH SUFFIX HSOP20 Package CASE 979-04 D2PAK D2PAK PIN ASSIGNMENT Vbat 21 20 Wake Gnd 1 Cur R 19 St 2 18 IN2 IN1 3 GLS1 4 17 GLS2 OUT1 5 16 OUT2 OUT1 6 15 OUT2 OUT1 7 14 OUT2 OUT1 8 13 OUT2 12 NC NC 9 NC 10 21 11 NC Vbat Simplified Block Diagram and Typical Application 5V 5V High Side Block MCU I/O St IN1 IN2 WAKE VBAT Control Cur R GND GLS1 OUT1 GLS2 OUT2 M GND GND Low Side Block This document contains information on a new product. Specifications and information herein are subject to change without notice. © Motorola, Inc., 2001. All rights reserved. For More Information On This Product, Go to: www.freescale.com TM MC33486 Freescale Semiconductor, Inc. PINS FUNCTION DESCRIPTION Pin No. TAB Description Vbat Supply Voltage The backside TAB is connected to the power supply of the MC33486DH. In addition to its supply function, the tab contributes to the thermal behaviour of the device by conducting the heat from the switching MOSFET to the printed circuit board. OUT1 OUTPUT Channel 1 OUT 2 OUTPUT Channel 2 Pins 5, 6,7,8 are the source of the output1 15mOhm High-side MOSFET1. Pins 13,14,15 are source of the output 2 15mOhm High-side MOSFET2. They are respectively controlled via the IN1 and IN2 pins. These outputs are current limited and thermally protected IN 1 INPUT Channel 1 IN 2 INPUT Channel 2 These are the device input pins which directly control their associated outputs. The levels are CMOS compatible. When the input is a logic low, the associated output is low (High Side OFF and Low Side ON). Each input pin has an internal active pull down, so that it will not float if disconnected. 19 St Status for both Channels The Status output is an open drain indication that goes active low when a fault mode (Short to gnd/Vbat, Overtemp) is detected by the device on either one channel or both simultaneously. Its internal structure is an open drain architecture with an internal clamp at 6V. An external pull up resistor connected to Vdd (5V) is needed. See Functional Truth Table. 4 17 GLS1 GLS2 These pins have to be connected to the gate of each Low Side. When the input (INx) is logic High, the associated GLS is grounded to turn off the external FET . 20 Wake This pin is a digital input . When Wake is a logic low, the device’s bias current draw is at a minimum. If Wake is a logic high, the part is operationnal. Wake pin has a pull down resistor. 2 Cur R Load Current Sense The Current Sense pin deliver a ratioed amount (1/3700) of the sum of the High Side currents that can be used to generate signal ground referenced output voltages for use by the microcontroller. NC Not Connected These pins are not used. GND GROUND This is the Ground pin of the device. 5,6,7,8 13,14,15,16 3 18 Freescale Semiconductor, Inc... Name/Function 9, 10, 11, 12, 1 For More Information On This Product, Go to: Dual High Side Switch forwww.freescale.com H-Bridge Automotive Applications 2 MC33486 Freescale Semiconductor, Inc. MAXIMUM RATINGS Parameter Symbol Value Unit Power Supply Voltage : Continuous/ Pulse Vbat - 0.3 to + 40 V Out1, Out2 to Vbat voltage : Continuous/ Pulse Vout - 0.3 to + 40 V IN1, IN2, Wake, ST Input DC voltage : Continuous/ Pulse Vin -0.3 to + 7 V IN1, IN2, Wake Input Current Iin +/- 5 mA Vesd1 Vesd2 +/-2000 +/-200 V V Output DC Output Current, 1 Channel ON, Ta=85°C (note4) Ioudc 10 A Output Current : Pulse (Note 3) Ioutp 35 A Junction Temperature Tj - 40 to +150 °C Storage Temperature Range Tst - 65 to +150 °C Thermal resistance junction to case Rthjc 2 °C/W Thermal resistance junction to ambient (Note 4) Rthja 25 °C/W Pd 5 W ESD all Pins Human Body Model (note1) Machine Model (note2) Freescale Semiconductor, Inc... THERMAL RATINGS Power dissipation at Tcase 140°C (Note 5) NOTES : 1. ESD1 testing is performed in accordance with the Human Body Model (Czap = 100pF, Rzap = 1500Ω) 2. ESD2 testing is performed in accordance with the Machine Model (Czap = 100pF, Rzap = 0Ω) 3. During load in rush current. 4. Device mounted on dual side printed circuit board with 70µm copper thickness and 10cm2 copper heat sink (2.5 cm2 on top side and 7.5 cm2 on down side). 5. Assuming a 150°C maximum junction temperature. ELECTRICAL CHARACTERISTICS High Side Block Tj from - 40°C to +150°C, Vbat from 9V to 16V, unless otherwise noted.Typical values reflect approximate mean at 25°C, nominal Vbat, at time of device characterization. Characteristics Description Symbol Unit Min. Typ. Conditions Max. SUPPLY CHARACTERISTICS Nominal Operating Voltage Vbat Standby Current Istdby 8 28 V Functional to truth table until overvoltage threshold 10 µA Vbat < 13.5V, wake=0, IN1=IN2=0 15 mA No PWM, IN1or IN2=5V, Wake=5V mA PWM=20kHz, d=50% Supply Current in Operation Mode Ion 9 Supply Current in Operation Mode Itbd 15 High Side Drain to Source On Resistance Rdson 12 15 mΩ Iout =5A, Tj = 25°C High Side Drain to Source On Resistance Rdson 21 30 mΩ Iout = 5A, Vbat > 9V & Tj = 150°C STATIC OUTPUT CHARACTERISTICS High Side Body Diode Voltage (Out to Vbat) Vbd 0.7 V @ Iout=-5A, Tj = 150°C Low Side Gate output Voltage Vgs 14 V Internally clamped For More Information On This Product, Go to: Dual High Side Switch forwww.freescale.com H-Bridge Automotive Applications 3 MC33486 Freescale Semiconductor, Inc. Characteristics Description Symbol Unit Min. Typ. Conditions Max. INPUTS CHARACTERISTICS IN1, IN2, Wake Input low levels Vil 1.5 Input high levels Vih 3.5 Input Hysteresis Vhyst 0.2 Logic Input Current Iin 1 Logic Input Current Iin Status Voltage Status Leakage V V 0.6 1 V IN1 and IN2 pins only µA Vin = 1.5V 50 µA Vin = 3.5V Vst 0.5 V Ist=1mA, output in fault Istlk 10 µA Vst=5V 35 50 A 3 20 µs From short to output shutdown 2 3 V If the low side is ON (GLS>4.3V). This is a inferred overcurrent condition 3 10 µs Freescale Semiconductor, Inc... STATUS CHARACTERISTICS OVERLOAD PROTECTION CHARACTERISTICS High Side Output Current Shutdown Ilim High Side Overcurrent Shutdown Delay tIlim Low Side Overcurrent detection Vout to gnd Vout- 20 1 fault Low Side Overcurrent detection Vout to gnd Shutdown Delay tout-fault 150 175 °C 10 °C Thermal Shutdown Tshut Thermal Shutdown Hysteresis Thyst Under Voltage Shutdown Threshold Vuv Under Voltage Shutdown hysteresis Vuv-hyst Over Voltage Shutdown Threshold Vov Over Voltage Shutdown hysteresis Vov-hyst 0.15 Cr 3700 6 8 0.15 27 29 V V 31 V V CURRENT RECOPY CHARACTERISTICS Current Recopy Ratio Iout from 4A to 8A Tj -40°C to 105°C Current Recopy Ratio Accuracy Iout from 4A to 8A Iout from 8A to 20A Cr-ac -15 -10 Current Recopy Clamp Voltage Vclst 6 TBC High Speed Mode to Low Speed Mode transition pulse width tsmod 150 Gate Low Side Rise Time Tpsrls 3.6 µs From 10% to 90% Vout, Load=3Ω Gate Low Side Fall Time Tnsrls 4.9 µs From 90% to 10% Vout, Load=3Ω 15 10 % Tj 2V. When this set of conditions occur for at least 8us (blanking time), both outputs OUT1 and OUT2 are tri-stated. The full bridge is tri-stated to prevent the motor for running in case of short to Vbat. As Vgs and Vds are measured in respect to the DHSB’s ground pin, it is essential that the low side source are connected to this same ground, in order to prevent false overcurrent detection due to ground shifts. Package The high side block is assembled into a power surface mount package. This package offers high thermal performances, and high current capabilities. It offers 10 pins on each package sides, and one additional connection which is the package heat sink (called pin 21). The heat sink acts as the device power Vbat connection. Soldering Information This device is packaged in a Surface Mount Power package indended to be soldered directly on the Printed Circuit Board. This device was qualified according to JEDEC standards JESD22-A113-B and J-STD-020A with the reflow conditions applicable for packages with thickness above 2.5mm : Convection 220°C +5/-0°C VPR 215-219°C IR / Convection 220°C +5/-0°C HSOP20 Thermal via from top to down side pcb external pcb (4x4 cm) With the above layout, thermal resistance junction to ambient of 25°C/W can be achieved. This value being splitted into : . junction to case : Rthjc = 2°C/W . case to ambient : Rthca = 23 °C/W. Lower value can be reached with the help of larger and thicker copper metal, higher number of thermal via from top to bottom side pcb and the use of additional thermal via from the circuit board to the module case. Thermal model The junction to ambient thermal resistance of the circuit mounted on a printed circuit board can be splitted into two main parts: junction to case and case to ambient resistances. A simplified steady state model is shown in figure 3 below. Figure 4. Simplified Thermal Model (Electrical Equivalent) Junction Temp Node (Volts represent Die Surface Temperature) Switch Power (W) (1.0A=1W of Power Dissipation) Rthjc Case Temp Node Rthca (1.0Ω=1°C/W) Ambient Temp Node (1.0V=1°C Ambient Temperature) For More Information On This Product, Go to: Dual High Side Switch forwww.freescale.com H-Bridge Automotive Applications 7 MC33486 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... The use of this model is similar to the electrical Ohm law (voltage = resistance X current), where: . Voltage represents temperature . Current represents power dissipated by the device . Resistance represents thermal resistance. We finally got : Temperature or delta temperature = Power Dissipation times Thermal resistance, that is : °C = W ° x C/W. Any node temperature can easily be calculated knowing the amount of power flowing through the thermal resistances. Example : 1. Numerical value. . Junction to case thermal resistance : 2°C/W (Rthjc) . Power into the switch : assuming the device is driving 8amps at 150°C junction temperature (Rdson at 150°C is 40mΩ) the total power dissipation is : 0.04*8*8 = 2.56W . Case to ambient thermal resistance (Rthca) : 20°C/W 2. Results. . Junction to case delta temp : 5°C (2.5W x 2°C/W) . Case delta temp from ambient : 50°C (20°C/W x 2.5W) . Actual junction temperature node will be : 50°C + 5°C = 55°C above the ambient temperature. Assuming an 85°C ambient temperature, the junction temperature is a t : 85 + 55 = 140°C. The above example take into account the junction to ambient thermal resistance, assuming that the ambient temp is 85°C. In the case where the device plus its printed circuit board are located inside a module, the ambient temp of the module should be taken into account. Or an additional thermal resistance from inside module to external ambient temperature must be added. The calculation method remains the same. The low side block is packaged into D2PAK or DPAK package. Thermal resistance junction to case is approx. 2°C/W. The junction to ambient thermal resistance follows the same rules as for the high side block, and is in the same range. For More Information On This Product, Go to: Dual High Side Switch forwww.freescale.com H-Bridge Automotive Applications 8 Freescale Semiconductor, Inc... Freescale Semiconductor, Inc. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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