MC33660BEF

NXP Semiconductors Technical Data Document Number: MC33660 Rev 6.0, 7/2016 ISO K line serial link interface The 33660 is a serial link bus interface device designed to provide bi-directional half-duplex communication interfacing in automotive diagnostic applications. It is designed to interface between the vehicle’s on-board microcontroller, and systems off-board the vehicle via the special ISO K line. The 33660 is designed to meet the Diagnostic Systems ISO9141 specification. The device’s K line bus driver’s output is fully protected against bus shorts and over-temperature conditions. The 33660 derives its robustness to temperature and voltage extremes by being built on a SMARTMOS process, incorporating CMOS logic, bipolar/MOS analog circuitry, and DMOS power FETs. Although the 33660 was principally designed for automotive applications, it is suited for other serial communication applications. It is parametrically specified over an ambient temperature range of -40 ºC ≤ TA ≤ 125 ºC and 8.0 V ≤ VBB ≤ 18 V supply. The economical SO-8 surface-mount plastic package makes the 33660 very cost effective. Features • Operates over a wide supply voltage of 8.0 V to 18 V • Operating temperature of -40 °C to 125 °C • Interfaces directly to standard CMOS microprocessors • ISO K line pin protected against shorts to battery • Thermal shutdown with hysteresis • ISO K line pin capable of high currents • ISO K line can be driven with up to 10 nF of parasitic capacitance • 8.0 kV ESD protection attainable with few additional components • Standby mode: no VBAT current drain with VDD at 5.0 V • Low current drain during operation with VDD at 5.0 V 33660 ISO9141 PHYSICAL INTERFACE EF SUFFIX (PB-FREE) 98ASB42564B 8-PIN SOICN Applications • Farm equipment • Automotive systems • Industrial equipment • Robotic equipment • Applications where module-to-module communications are required • Marine and aircraft networks +VBAT VDD 33660 VDD VDD VBB CEN RX TX ISO MCU Dx SCIRxD SCITxD ISO K-LINE TXD GND Figure 1. 33660 simplified application diagram © 2016 NXP B.V. RXD 1 Orderable parts Table 1. Orderable part variations Part number (1) Temperature (TA) Package Parameter Symbol Condition 33660 33660B (2) VBB(5a) Pulse 5a 470 ohm series resistor and 100 nF capacitor to GND on VBB Pulse 5b 470 ohm series resistor and 100 nF capacitor to GND on VBB – 82 V 8-SOICN VBB Load Dump Peak Voltage (in accordance with ISO 7637-2 & ISO 7637-3) 45 V 45 V – ±25000 V MC33660EF -40 °C to 125 °C MC33660BEF Module Level ESD (Air Discharge, Powered) VBB(5b) VESD4 33 V zener diode and 470 pF capacitor to GND on ISO Notes 1. To order parts in tape & reel, add the R2 suffix to the part number. 2. Recommended for all new designs 33660 2 NXP Semiconductors 2 Internal block diagram VBB 3.0 kΩ 60 V 600 kΩ 20 V * Only applies to 33660B CEN 10 V 125 kΩ RX RHYS 10 V 55 kΩ 550 kΩ ISO 45 V Master Bias 110 kΩ 55 V Thermal Shutdown VDD 2.0 kΩ 10 V 125 kΩ TX 10 V GND Figure 2. 33660 simplified internal block diagram 33660 NXP Semiconductors 3 3 Pin connections 3.1 Pinout diagram VBB 11 88 CEN NC 22 77 VDD GND 33 66 RX ISO 44 55 TX Figure 3. 33660 pin connections 3.2 Pin definitions Table 2. 33660 pin definitions Pin Number Pin Name 1 VBB Battery power through external resistor and diode. Definition 2 NC Not to be connected. (3) 3 GND Common signal and power return. 4 ISO Bus connection. 5 TX Logic level input for data to be transmitted on the bus. 6 RX Logic output of data received on the bus. 7 VDD Logic power source input. 8 CEN Chip enable. Logic “1” for active state. Logic “0” for sleep state. Notes 3. NC pins should not have any connections made to them. NC pins are not guaranteed to be open circuits. 33660 4 NXP Semiconductors 4 Electrical characteristics 4.1 Maximum ratings Table 3. Maximum ratings All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent damage to the device. Symbol VDD VBB(5a) VBB(5b) VISO VESD1 VESD2 Rating VDD DC Supply Voltage Value Unit -0.3 to 7.0 V VBB Load Dump Peak Voltage (in accordance with ISO 7637-2 & ISO 7637-3) • Pulse 5a - 33660B only • Pulse 5b 82 45 ISO Pin Load Dump Peak Voltage 40 ESD Voltage • Human Body Model • Machine Model 33660 33660B • Charge Device Model Corner Pins VESD3-1 VESD3-2 Notes V V (4) (5) (6) ±2000 (6) ±150 ±200 ±750 ±500 V (6) All other Pins • Module Level ESD (Air Discharge, Powered) 33660B only VESD4 (7) ±25000 ISO pin with 33 V zener diode and 470 pF capacitor to GND ECLAMP 10 mJ Storage Temperature -55 to +150 °C TC Operating Case Temperature -40 to +125 °C TJ Operating Junction Temperature -40 to +150 °C PD Power Dissipation TA = 25 °C TSTG TPPRT RθJA ISO Clamp Energy Peak Package Reflow Temperature During Reflow Thermal Resistance: Junction-to-Ambient 100 mW Note 10. °C 150 °C/W (8) (9), (10) Notes 4. Device will survive double battery jump start conditions in typical applications for 10 minutes duration, but is not guaranteed to remain within specified parametric limits during this duration. 5. ESD data available upon request. 6. ESD1 testing is performed in accordance with the Human Body Model (CZAP = 100 pF, RZAP = 1500 Ω), ESD2 testing is performed in accordance with the Machine Model (CZAP = 200 pF, RZAP = 0 Ω), ESD3 testing is performed in accordance with the Charge Device Model (CZAP = 4.0 pF). 7. 8. 9. 10. ESD4 testing is performed in accordance with ISO 10605 ESD model (C = 330 pF, R = 2.0 kΩ). ESD discharges start at ±5.0 kV and go up to ±25 kV in increments of 5.0 kV. There are two positions for discharges: 8.0 cm cable from ISO connector, 85 cm cable from ISO connector. There are 10 ESD discharges per voltage at each cable position at a minimum of 1.0 s intervals. Remaining charge is not bled off after every discharge. Nonrepetitive clamping capability at 25 °C. Pin soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may cause malfunction or permanent damage to the device. Freescale’s Package Reflow capability meets Pb-free requirements for JEDEC standard J-STD-020C. For Peak Package Reflow Temperature and Moisture Sensitivity Levels (MSL), Go to www.freescale.com, search by part number [e.g. remove prefixes/suffixes and enter the core ID to view all orderable parts. (i.e. MC33xxxD enter 33xxx), and review parametrics. 33660 NXP Semiconductors 5 4.2 Static electrical characteristics Table 4. Static electrical characteristics Characteristics noted under conditions of 4.75 V ≤ VDD ≤ 5.25 V, 8.0 V ≤ VBB ≤ 18 V, -40 °C ≤ TC ≤ 125 °C, unless otherwise noted. Symbol Characteristic Min. Typ. Max. Unit Notes Power and control IDD(SS) VDD Sleep State Current • Tx = 0.8 VDD, CEN = 0.3 VDD – – 0.1 mA IDD(Q) VDD Quiescent Operating Current • Tx = 0.2 VDD, CEN = 0.7 VDD – – 1.0 mA IBB(SS) VBB Sleep State Current • VBB = 16 V, Tx = 0.8 VDD, CEN = 0.3 VDD – – 50 µA IBB(Q) VBB Quiescent Operating Current • TX = 0.2 VDD, CEN = 0.7 VDD – – 1.0 mA 0.7 VDD – – – – 0.3 VDD V (11) VIH(CEN) VIL(CEN) Chip Enable • Input High Voltage Threshold • Input Low Voltage Threshold IPD(CEN) Chip Enable Pull-down Current 2.0 – 40 µA (13) VIL(TX) TX Input Low Voltage Threshold • RISO = 510 Ω – – 0.3 x VDD V (14) VIH(TX) TX Input High Voltage Threshold • RISO = 510 Ω 0.7 x VDD – – V (15) IPU(TX) TX Pull-up Current -40 – -2.0 µA (16) VOL(RX) RX Output Low Voltage Threshold • RISO = 510 Ω, TX = 0.2 VDD, Rx Sinking 1.0 mA – – 0.2 VDD V VOH(RX) RX Output High Voltage Threshold • RISO = 510 Ω, TX = 0.8 VDD, RX Sourcing 250 µA 0.8 VDD – – V 150 170 – °C TLIM Thermal Shutdown (12) (17) ISO I/O VIL(ISO) Input Low Voltage Threshold • RISO = 510 Ω, TX = 0.8 VDD – – 0.4 x VBB V VIH(ISO) Input High Voltage Threshold • RISO = 510 Ω, TX = 0.8 VDD 0.7 x VBB – – V Input Voltage Hysteresis 0.05 x VBB – 0.1 x VBB V -5.0 – -140 µA 50 – 200 mA VHYS(ISO) IPU(ISO) Internal Pull-up Current • RISO = ∞ Ω, TX = 0.8 VDD, VISO = 9.0 V, VBB = 18 V ISC(ISO) Short-circuit Current Limit • RISO = 0 Ω, TX = 0.4 VDD, VISO = VBB Notes 11. When IBB transitions to >100 µA. 12. When IBB transitions to