MC33GD3100A3EKR2

32 IC SO MC33GD3100 Advanced IGBT/SiC gate driver Rev. 9.0 — 5 March 2020 1 Product short data sheet General description The MC33GD3100 is an advanced single channel gate driver for IGBTs and SiC power devices. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control. Current and temperature sense minimizes IGBT stress during faults. Accurate and configurable under voltage lockout (UVLO) provides protection while ensuring sufficient gate drive voltage headroom. The MC33GD3100 autonomously manages severe faults and reports faults and status via INTB pin and an SPI interface. It is capable of directly driving gates of most IGBTs and SiC MOSFETs. Self test, control and protection functions are included for design of high reliability systems (ASIL C/D). It meets the stringent requirements of automotive applications and is fully AEC-Q100 grade 1 qualified. MC33GD3100 NXP Semiconductors Advanced IGBT/SiC gate driver 2 Simplified application diagram VBATT1 Backup power supply VDD (opt) VSUP Safing logic Redundant 5.0 V supply FS6500 VDD_HU VSUP GND2 NC2 VREF VDD TSENSEA FSSTATEH CSB FSISO FSSTATEL GND1 VCC FSENB MOSI VCCREG MISO AMUXIN SCLK GH 5.0 V INTH INTB PWMH PWM MC33GD3100 TIMER_INH VCC_LU GND2_LU VCC_LV GL AOUT VEE NC13 ISENSE FSSTATE DESAT FSENB CLAMP GND1 MPC5744P MPC5777C AMC TSENSEA TSENSEK RGH RGL GND2 GND2_HU GND2_LV VCC_LU VCC_LW VSUP GND2_LW VDD_LU Single flyback powers all three low-side gate drives. High-side supplies are similarly created. These are powered by VBATT or the backup power supply when VBATT is lost. GND2_HU VEE PWMALT 2X +DC Link VCC_HU VSUP (opt) VBATT2 Isolation barrier VSUP VDD_LU VDD_HU CSB VSUP GND2 NC2 VREF VDD TSENSEA CSB FSISO GND1 VCC MOSI MOSI VCCREG AMUXIN MISO MISO SCLK SCLK INTL INTB PWML PWM MC33GD3100 GND1 AMC GL AOUT VEE NC13 ISENSE FSSTATE DESAT FSENB CLAMP GND1 GND2_LU TSENSEA RGH TSENSEK VEE PWMALT TIMER_INL GH PHASEU RGL GND2 - DC Link GND2_LU aaa-024500 Figure 1. Simplified application diagram MC33GD3100_SDS Product short data sheet All information provided in this document is subject to legal disclaimers. Rev. 9.0 — 5 March 2020 © NXP B.V. 2020. All rights reserved. 2 / 18 MC33GD3100 NXP Semiconductors Advanced IGBT/SiC gate driver 3 Features and benefits This section summarizes the key features, safety features, and regulatory approvals. 3.1 Key features • • • • • • • • • • • • • • SPI interface for safety monitoring, programmability and flexibility Low propagation delay and minimal PWM distortion Integrated Galvanic signal isolation (up to 8 kV) Integrated gate drive power stage capable of 15 A peak source and sink Fully programmable Active Miller Clamp Compatible with negative gate supply Compatible with current sense and temperature sense IGBTs Integrated soft shutdown, two-level turn-off, active clamp, and segmented drive for wave shaping CMTI > 100 V/ns Compatible with 200 V to 1700 V IGBT/SiC, power range > 125 kW Operating temperature range −40 °C to 125 °C External Creepage distance (CPG): > 7.8 mm Operating frequency > 40 kHz 5.0 V and 3.3 V tolerant MCU interface available 3.2 Safety features • Certified to ASIL D ISO26262 functional safety requirements for full diagnostics • Current, DESAT, and temperature sense inputs and ADC reporting for IGBT/SiC monitoring • Fast short-circuit protection, overcurrent protection, temperature warning and shutdown • Interrupt pin for fast response to faults • Built-in self-check of all analog and digital circuits • Continuous watchdog of die-to-die communications • Mandatory deadtime enforcement • Over and undervoltage supervision of all power supplies on both low and high voltage sides • Fail-safe state management pins on both low and high voltage sides • VGE real time cycle-by-cycle monitoring 3.3 Safety and regulatory approvals • • • • MC33GD3100_SDS Product short data sheet Reinforced Isolation per DIN V VDE V 0884-10 Withstand 2500 V rms (1 minute) isolation per UL 1577 CSA Component Acceptance Notice 5A AEC-Q100 grade 1 automotive qualified All information provided in this document is subject to legal disclaimers. Rev. 9.0 — 5 March 2020 © NXP B.V. 2020. All rights reserved. 3 / 18 MC33GD3100 NXP Semiconductors Advanced IGBT/SiC gate driver 4 Ordering information Table 1. Orderable part variations Part number VDD MC33GD3100EK 5.0 V MC33GD3100A3EK 3.3 V [1] 5 [1] Temperature (TJ) Package −40 °C to 150 °C 32-pin wide body SOIC, 0.65 mm pitch To order parts in tape and reel, add the R2 suffix to the part number. Internal block diagram VSUP VDD Power management 1 Power management 2 VDDLV, bandgap, references, oscillators, UV/OVLO, etc... VCCHV, bandgap, references, oscillators, UV/OVLO, etc... GND1 Gate drive control Logic block 1 Config, DT control, cross conduction, fault management, safing NC13 PWM PWMALT VREF GND2 NC2 FSENB VCCREG (5.0 V, 1 % 20 mA) (two pins) FSSTATE VCC Logic block 2 PWM TX RX Safing logic Active VCE, clamp, desat Fault management, conf. registers, fault registers, gate control, logic, ASIL test control Charge and discharge control DATA_IN Deadtime control TX RX DATA_OUT CSB DESAT GH GL Active Miller clamp AMC IGBT current sense ISENSE IGBT temp sense TSENSEA Serial comm Serial comm SCLK CLAMP RX TX SPI MOSI FSISO MISO TEMP IGBT AOUT Duty cycle encoder INTB INTB/VGEMON AMUX and 10-bit ADC INT RX TX TEMP IC VCC AMUXIN GND2 (two pins) VEE (two pins) aaa-024501 Figure 2. Internal block diagram MC33GD3100_SDS Product short data sheet All information provided in this document is subject to legal disclaimers. Rev. 9.0 — 5 March 2020 © NXP B.V. 2020. All rights reserved. 4 / 18 MC33GD3100 NXP Semiconductors Advanced IGBT/SiC gate driver 6 Pinning information 6.1 Pinning VSUP GND2 NC VREF VDD TSENSEA CSB FSISO GND1 VCC MOSI VCCREG MISO AMUXIN SCLK GH MC33GD3100 INTB AMC PWM VEE GL PWMALT VEE AOUT ISENSE NC FSSTATE DESAT FSENB CLAMP GND1 GND2 aaa-024502 Figure 3. Pinout diagram 6.2 Pin description Table 2. Pin definitions Pin number Pin name Definition Pin type Comments Pins 1 to 16 (low-voltage, non-isolated pins) 1 VSUP power input Externally supplied voltage Typically supplied by source supply; primary vehicle battery supply for non-isolated circuits 2 NC2 — — No connection NC2 must be connected to GND1 3 VDD power input Internally generated supply to power AOUT, MISO and INTB Not to be used to power other circuitry. External capacitor should be placed at this pin. May be supplied externally (MC33GD3100EK only). 4 CSB digital input SPI chip select Chip select input. Active low. CSB frames SPI commands and enables SPI port. 5, 16 GND1 ground ground Ground for the nonisolated circuitry: input logic including SPI, PWM, PWMALT, FSENB, FSSTATE, AOUT, VDD, INTB Isolated from all circuitry referenced to GND2 6 MOSI digital input SPI master out slave in pin Input data for SPI port. MC33GD3100 latches MOSI on rising edge of SCLK, MSB first MC33GD3100_SDS Product short data sheet All information provided in this document is subject to legal disclaimers. Rev. 9.0 — 5 March 2020 © NXP B.V. 2020. All rights reserved. 5 / 18 MC33GD3100 NXP Semiconductors Advanced IGBT/SiC gate driver Pin number Pin name Pin type Definition Comments 7 MISO digital output SPI master in slave out pin Output data for SPI port, MC33GD3100 outputs MISO on falling edge of SCLK. 8 SCLK digital input SPI clock Clock for SPI 9 INTB digital output Interrupt/Fault status output Interrupt pin output, reports faults with active pulldown. Pin is left open if unused. 10 PWM digital input PWM input for the IGBT gate Active high input logic signal turns on the IGBT 11 PWMALT digital input PWM input for opposing IGBT gate Active high input logic signal turns off IGBT gate (opposing IGBT is turned on). Connected to GND1 if unused. 12 AOUT analog output Duty cycle encoded analog signals for temperature or voltage Desired analog signal is selected by SPI. Pin is left open if unused. 13 NC13 — — No Connection NC13 is unused and should be left open or connected to the MCU to allow compatibility with the GD3160. If GD3160 compatibility is not desired, NC13 can be tied to GND. 14 FSSTATE digital input Fail-safe state specifies the desired state of the output during a fail-safe condition Allows fail-safe logic control. Connected to GND1 if unused. 15 FSENB digital input Enables the fail-safe state Allows fail-safe logic control. Connected to VDD if unused. Must be connected to IGBT's emitter Pins 17 to 32 (high-voltage, isolated pins) 17, 32 GND2 ground 2 ground 2 Ground for the isolated (high-voltage) circuitry 18 CLAMP analog input VCE sense terminal for Connected to VEE if actively clamping the unused collector voltage at turn-off 19 DESAT analog output VCE desaturation monitoring pin Connected to GND2 if unused 20 ISENSE analog input Current sense feedback pin Receives current sense feedback from the IGBT's current sense. Connected to GND2 if unused. 21, 23 VEE power input Negative voltage supply for gate of the IGBT Typically −5.0 to −8.0 V, referenced to GND2. Connect to GND2 if a negative supply is not used. 22 GL analog output Primary discharging pin for Pull-down transistor at this IGBT gate pin discharges the IGBT gate MC33GD3100_SDS Product short data sheet All information provided in this document is subject to legal disclaimers. Rev. 9.0 — 5 March 2020 © NXP B.V. 2020. All rights reserved. 6 / 18 MC33GD3100 NXP Semiconductors Advanced IGBT/SiC gate driver Pin number Pin name Pin type 24 AMC analog input Pin connected directly to Used for diagnostics and IGBT gate for gate sensing Active Miller Clamping and Active Miller Clamping 25 GH analog output Sole charging pin for IGBT Pullup transistor at this pin gate charges the IGBT gate 26 AMUXIN analog input Analog MUX input Connected to GND2 if unused 27 VCCREG power in/out Regulated positive supply for the IGBT gate. Requires capacitance. 15 V supply derived from VCC. Connected to VCC if regulator unused. 28 VCC power input Positive voltage supply for isolated circuitry and gate of the IGBT Typically 15 to 18 V, referenced to GND2 29 FSISO digital input Tri-states gate drive transistors to allow external control of IGBT gate Used for HV domain management of fail-safe state. Connected to GND2 if unused. 30 TSENSEA analog input Anode of temp sense diode of IGBT Sources current and reads voltage of temp sense diode of one IGBT die. Connect to VREF if unused. 31 VREF analog output 5.0 V reference for isolated analog circuitry Capable of sourcing up to 20 mA 7 Definition Comments Absolute maximum ratings All voltages are referenced to GND1 or GND2. Currents are positive into and negative out of the specified pins. Exceeding these ratings may cause malfunction or permanent device damage. Table 3. Absolute maximum ratings All voltages referenced to GND1 (LV domain) or GND2 (HV domain). Currents are positive into and negative out of the specified pins. Symbol Description (Rating) Min Max Unit POWER SUPPLIES AND CURRENT REFERENCES VVSUP Low voltage domain supply voltage [1] −0.3 40 V VVDD3p3 Low voltage domain logic supply voltage, 3.3 V version [1] −0.3 6.0 V VVDD5 Low voltage domain logic supply voltage, 5.0 V version [1] −0.3 6.0 V VVCC High voltage domain positive supply voltage [2] −0.3 25 V VVEE High voltage domain negative supply voltage [2] −12 0.3 V VVCC-VEE High voltage domain positive/negative supply −0.3 37 V VVCCREG High voltage domain post regulated supply voltage −0.3 25 V IVCCREG VCCREG output current — −100 mA −0.3 6.0 V — −20 mA VVREF VREF voltage IVREF VREF output current [2] [2] LOGIC PINS VIN Logic input pin voltage (FSSTATE, FSENB, PWM, PWMALT, SCLK, CSB, MOSI) [1] −0.3 18 V VOUT Logic output pin voltage (MISO, INTB, AOUT) [1] −0.3 VVDD_max + 0.3 V V VFSISO Logic input pin voltage (FSISO) [2] −0.3 12 V MC33GD3100_SDS Product short data sheet All information provided in this document is subject to legal disclaimers. Rev. 9.0 — 5 March 2020 © NXP B.V. 2020. All rights reserved. 7 / 18 MC33GD3100 NXP Semiconductors Advanced IGBT/SiC gate driver Symbol Description (Rating) Min Max Unit GATE DRIVE OUTPUT STAGE GH voltage [2] VEE − 0.3 VVCCREG_max + 0.3 V V VGL GL voltage [2] VEE − 0.3 VVCCREG_max + 0.3 V V VAMC AMC voltage [2] VEE − 0.3 VVCCREG_max + 0.3 V V ISOURCEMAX GH max. source current [3] — −15 A ISINKMAX GL, AMC max. sink current [3] — 15 A VCLAMP CLAMP voltage [2] VEE − 0.3 VVCCREG_max + 0.3 V V DESAT voltage [2] −0.3 VVCCREG_max + 0.3 V V TSENSEA voltage [2] −0.3 6.0 V Open drain DC output current [4] — 20 mA ISENSE voltage [2] −2.0 VVCCREG_max + 0.3 V V AMUXIN voltage [2] −0.3 6.0 V VESDHBM ESD voltage (HBM) All pins [5] −2.0 2.0 VESDCDM ESD voltage (CDM) Corner pins Other pins [6] −750 −500 750 500 VESDModule ESD voltage (module level) VSUP, GND1, GND2 pins [7] −8.0 8.0 Common mode transient immunity [8] — 100 V/ns 0 40 kHz VGH VDESAT TEMPERATURE SENSE PIN VTSENSEA INTB PIN IINTB ISENSE SENSE PIN VISENSE AMUXIN PIN VAMUXIN ESD RATINGS kV V kV IMMUNITY dVISO/dt PWM FREQUENCY fPWMMAX [1] [2] [3] [4] [5] [6] [7] [8] 8 Maximum switching frequency Ref = GND1 Ref = GND2 50 %, 100 nF, 10 kHz VINTB < 0.8 V Human Body Model (HBM) at device level ANSI/ESDA/JEDEC JS-001: 2010 Model HBM (human body model) Electrostatic Discharge (ESD) Sensitivity Testing Human Body Model (HBM) Test points: pin to GND1 and pin to GND2 Charged Device Model (CDM) ANSI/ESD S5.3.1-2009 ESD Association Standard for Electrostatic Discharge Sensitivity Testing - Charged Device Model (CDM) - Component Level Module Level ESD Tests ISO 10605:2008/Cor. 1:2010(E) Road vehicles – Test methods for electrical disturbances from electrostatic discharge Pulse width = 10 ns General functional description 8.1 Introduction The MC33GD3100 is an advanced single channel gate driver for N-channel power IGBTs and SiC MOSFETs. Integrated galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail- MC33GD3100_SDS Product short data sheet All information provided in this document is subject to legal disclaimers. Rev. 9.0 — 5 March 2020 © NXP B.V. 2020. All rights reserved. 8 / 18 MC33GD3100 NXP Semiconductors Advanced IGBT/SiC gate driver to-rail gate voltage control. Collector current, collector-emitter voltage, and IGBT/SiC temperature sense minimize IGBT/SiC stress during faults. The MC33GD3100 autonomously manages severe faults and reports faults and status via INTB pin and an SPI interface. It is capable of directly driving gates of most IGBTs and SiC MOSFETs. Self test, control and protection functions are included for design of high reliability systems (ASIL/SIL). 8.2 Power supply options The MC33GD3100 is available in two options: VDD of 3.3 V or 5.0 V. The two options are desired to allow interfacing to MCUs with 3.3 or 5.0 V I/O. If VDD is 3.3 V, then the user must supply VSUP with a voltage source greater than VSUPUV_TH, usually battery in a vehicle. In this case, power for VDD is always derived from VSUP; an external VDD supply is not allowed. The MC33GD3100A3EK cannot be powered exclusively by VDD = 3.3 V. If VDD is 5.0 V, the IC can be powered from a single voltage source at VSUP. In this case, VDD is derived from VSUP. If VDD is 5.0 V, the IC can be powered from a single, 5.0 V source. In this case, VSUP and VDD must be connected together on the PCB. Since an externally supplied VVSUP never exceeds VSUPUV_TH, the internal VDD regulator is never turned on. 8.3 Features The MC33GD3100 is designed for a wide range of IGBT/SiC voltage ratings. Its logic interface and feedback signals are galvanically isolated from the high voltage circuitry that directly drives the IGBT gate and monitors its temperature sense, DESAT, CLAMP and current sense pins. The MC33GD3100 is built with two domains and each has its own GND reference. Control and fault signals are transmitted between the non-isolated, “low voltage” domain (LV domain) and the isolated, "high voltage" domain (HV domain) via magnetic coupling. GND1 must be connected to the logic controller’s GND. GND2 must be connected to the IGBT’s emitter. Pins 1 through 16 are connected to the low voltage domain. These pins provide interface to all the control, programming, fault monitoring and fail-safe features. A power supply connected to the VSUP pin provides power for low voltage domain. Pins 17 through 32 are connected to the high voltage domain. These pins provide the interface to the IGBT/SiC gate, its power supplies and its terminals (collector sense, temperature sense and current sense). A power supply connected to the VCC pin provides power for the high voltage domain. VCC and VEE are the positive and negative power supplies used to charge and discharge the IGBT/SiC gate. VCCREG is the output of a post regulator. This post regulator can be used to minimize positive supply voltage variation when multiple gate voltage supplies are generated from a single source. The gate drive stage consists of three transistors and a current source. The GH transistor is a high current pullup (gate charging) transistor connected between VCCREG and the GH pin. Pins GL and AMC have separate transistors that provide gate discharge paths. GL is intended to be used as the primary turn-off path with an external resistor used to control discharge current. The AMC pin provides an “Active Miller Clamp”, which clamps MC33GD3100_SDS Product short data sheet All information provided in this document is subject to legal disclaimers. Rev. 9.0 — 5 March 2020 © NXP B.V. 2020. All rights reserved. 9 / 18 MC33GD3100 NXP Semiconductors Advanced IGBT/SiC gate driver the IGBT’s/SiC gate to its emitter when the IGBT/SiC is off. The GH, GL and AMC transistors are capable of currents up to 15 A for 2.0 µs. A soft shutdown current source is in parallel with the GL transistor. Its role is to provide a slower gate discharge during a short-circuit condition. Fault conditions can trigger a “two level turn-off” (2LTO). If this feature is enabled, the gate drive temporarily decreases the IGBT’s/SiC gate voltage while the possible fault is being validated. Reducing the gate voltage limits the maximum fault current and thereby lessens the safe operating area stress on the IGBT/SiC. The MC33GD3100 can be used with or without a negative gate drive voltage. Negative gate voltage is often used to ensure an IGBT/SiC is kept off when its opposing IGBT/ SiC is turning on. However, using a negative supply increases gate drive losses and complicates the gate drive power supply. Using a low impedance turn off circuit is another way to alleviate or eliminate the problem of dv/dt induced turn on. The AMC transistor provides a very low turn off impedance to hold the IGBT/SiC off when the other half-bridge IGBT/SiC device turns on. By monitoring the IGBT/SiC collector-emitter voltage, the MC33GD3100 can provide two means of protection. When the IGBT/SiC is commanded on, its VCE should be only a few volts at most. A short-circuit condition is likely to cause the IGBT’s VCE to exceed its normal on-state voltage. The MC33GD3100’s VCE desaturation detection circuitry monitors VCE for this condition. Active clamping of VCE via a zener placed across the IGBT/SiC collector-gate terminals is another fault management technique. The MC33GD3100 monitors the zener clamp and reduces the turn-off gate drive when excessive VCE is present. Reducing the gate discharge current improves clamping tolerance and reduces the size of the zeners. The current sense pin, ISENSE, can be used to monitor the sense cells of a current sense IGBT. Responding directly to an overcurrent or short-circuit condition using current sensing can be a much faster way to respond to a severe overcurrent condition (as compared to desaturation detection). The MC33GD3100 can also monitor temperature sense diodes or thermistors if the IGBT/SiC has them. An ADC allows reporting the temperature via the SPI as well as using the ADC reading to trigger overtemperature warning or fault conditions. Monitoring the IGBT/SiC temperature via the AOUT pin also allows real time monitoring of the system’s performance in the field. The MC33GD3100's AMUXIN pin provides a means to read other important system voltages, which can be duty cycle encoded and provided at the AOUT pin. The IC has two ways to report fault and status data. The INTB pin immediately reports latched faults. It is active low when a fault occurs. The SPI can also report fault details as well as status and configuration information. 9 Packaging 9.1 Package mechanical dimensions Package dimensions are provided in package drawings. To find the most current package outline drawing, go to www.nxp.com and perform a keyword search for the drawing’s document number. MC33GD3100_SDS Product short data sheet All information provided in this document is subject to legal disclaimers. Rev. 9.0 — 5 March 2020 © NXP B.V. 2020. All rights reserved. 10 / 18 MC33GD3100 NXP Semiconductors Advanced IGBT/SiC gate driver Table 4. Package outline MC33GD3100_SDS Product short data sheet Package Suffix 32-pin wide body SOIC EK Package outline drawing number 98ARH99137A All information provided in this document is subject to legal disclaimers. Rev. 9.0 — 5 March 2020 © NXP B.V. 2020. All rights reserved. 11 / 18 MC33GD3100 NXP Semiconductors Advanced IGBT/SiC gate driver MC33GD3100_SDS Product short data sheet All information provided in this document is subject to legal disclaimers. Rev. 9.0 — 5 March 2020 © NXP B.V. 2020. All rights reserved. 12 / 18 MC33GD3100 NXP Semiconductors Advanced IGBT/SiC gate driver MC33GD3100_SDS Product short data sheet All information provided in this document is subject to legal disclaimers. Rev. 9.0 — 5 March 2020 © NXP B.V. 2020. All rights reserved. 13 / 18 MC33GD3100 NXP Semiconductors Advanced IGBT/SiC gate driver 10 Revision history Table 5. Revision history Document ID Release date Data sheet status Change notice Supersedes MC33GD3100_SDS v.9.0 20200305 Product data sheet — MC33GD3100_SDS v.8.0 Modifications • • • • MC33GD3100_SDS v.8.0 20200218 Modifications • Updated revision number to align with the data sheet MC33GD3100_SDS v.7.0 20191211 Product data sheet — MC33GD3100_SDS v.6.0 MC33GD3100_SDS v.6.0 20190809 Preliminary data sheet — MC33GD3100_SDS v.5.0 MC33GD3100_SDS v.5.0 20190716 Preliminary data sheet — MC33GD3100_SDS v.4.0 MC33GD3100_SDS v.4.0 20190715 Preliminary data sheet — MC33GD3100_SDS v.3.1 MC33GD3100_SDS v.3.1 20181026 Advance information — MC33GD3100_SDS v.3.0 MC33GD3100_SDS v.3.0 20181011 Advance information — MC33GD3100_SDS v.2.0 MC33GD3100_SDS v.2.0 20180813 Advance information — MC33GD3100_SDS v.1.9 MC33GD3100_SDS v.1.9 20180731 Advance information — MC33GD3100_SDS v.1.6 MC33GD3100_SDS v.1.6 20180419 Product preview — — MC33GD3100_SDS Product short data sheet Updated Figure 1 to reflect simplified active clamp circuit Made grammar and style changes to Pin 13 "Comments" and "Definition" cells in Table 2 Updated Table 3 to correct typos and to use a uniform current polarity definition Changed "Deadtime" to "Mandatory Deadtime" in Section 3.2 Product data sheet — All information provided in this document is subject to legal disclaimers. Rev. 9.0 — 5 March 2020 MC33GD3100_SDS v.7.0 © NXP B.V. 2020. All rights reserved. 14 / 18 MC33GD3100 NXP Semiconductors Advanced IGBT/SiC gate driver 11 Legal information 11.1 Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. notice. 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NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. All information provided in this document is subject to legal disclaimers. Rev. 9.0 — 5 March 2020 © NXP B.V. 2020. All rights reserved. 15 / 18 MC33GD3100 NXP Semiconductors Advanced IGBT/SiC gate driver Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. NXP — is a trademark of NXP B.V. SafeAssure — is a trademark of NXP B.V. MC33GD3100_SDS Product short data sheet All information provided in this document is subject to legal disclaimers. Rev. 9.0 — 5 March 2020 © NXP B.V. 2020. All rights reserved. 16 / 18 MC33GD3100 NXP Semiconductors Advanced IGBT/SiC gate driver Tables Tab. 1. Tab. 2. Tab. 3. Orderable part variations ...................................4 Pin definitions ....................................................5 Absolute maximum ratings ................................7 Tab. 4. Tab. 5. Package outline ...............................................11 Revision history ...............................................14 Fig. 3. Pinout diagram .................................................. 5 Figures Fig. 1. Fig. 2. Simplified application diagram ...........................2 Internal block diagram .......................................4 MC33GD3100_SDS Product short data sheet All information provided in this document is subject to legal disclaimers. Rev. 9.0 — 5 March 2020 © NXP B.V. 2020. All rights reserved. 17 / 18 MC33GD3100 NXP Semiconductors Advanced IGBT/SiC gate driver Contents 1 2 3 3.1 3.2 3.3 4 5 6 6.1 6.2 7 8 8.1 8.2 8.3 9 9.1 10 11 General description ............................................ 1 Simplified application diagram .......................... 2 Features and benefits .........................................3 Key features ...................................................... 3 Safety features .................................................. 3 Safety and regulatory approvals ........................ 3 Ordering information .......................................... 4 Internal block diagram ........................................4 Pinning information ............................................ 5 Pinning ............................................................... 5 Pin description ................................................... 5 Absolute maximum ratings ................................ 7 General functional description .......................... 8 Introduction ........................................................ 8 Power supply options ........................................ 9 Features .............................................................9 Packaging .......................................................... 10 Package mechanical dimensions .................... 10 Revision history ................................................ 14 Legal information .............................................. 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section 'Legal information'. © NXP B.V. 2020. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 5 March 2020 Document identifier: MC33GD3100_SDS