Freescale Semiconductor
Technical Data
Document Number: MC33901
Rev. 3.0, 6/2015
High-speed CAN Transceiver
The MC33901/34901 are SMARTMOS high-speed (up to 1.0 Mbits/s) CAN
transceivers providing the physical interface between the CAN protocol
controller of an MCU and the physical dual wires CAN bus. They are packaged
in an 8-pin SOIC with market standard pinout, and offer excellent EMC and ESD
performance without the need for external filter components.
Four devices variations are available:
- Versions with and without CAN bus wake-up.
- Versions with and without TXD dominant protection.
Features
• Very low-current consumption in standby mode
• Compatible with 3.3 V or 5.0 V MCU interface
• Standby mode with remote CAN wake-up on some versions.
• Pin and function compatible with market standard
Cost efficient robustness:
• High system level ESD performance
• Very high electromagnetic Immunity and low electromagnetic emission
without common mode choke or other external components.
Fail-safe behaviors:
• TXD Dominant timeout, on the 33901 version.
• Ideal passive when unpowered, CAN bus leakage current RXD low, bus recessive => RXD high). The delay between bus dominant
and RXD low, and bus recessive and RXD high is longer than in Normal mode (refer to tTGLT).
The three events must occur within the tWU_TO timeout.
Figure 10 illustrates the wake-up detection and reporting (toggling) mechanism. If the three events do not occur within the TWU_TO timeout,
the wake-up and toggling mechanism are not active. This is illustrated in Figure 11.
The three events and the timeout function avoid a permanent dominant state on the bus that would generate a permanent wake-up
situation, which would prevent the system from entering low power mode.
4.3.3
Unpowered Mode
When VIO is below VIO UV, the device is in unpowered mode. The CAN bus is in high-impedance and is unable to transmit, receive, or
report bus wake-up events.
4.4
Fail-safe Mechanisms
The device implements various protection, detection, and predictable fail-safe mechanisms.
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Analog Integrated Circuit Device Data
Freescale Semiconductor
4.4.1
STB and TXD Input Pins
The STB input pin has an internal integrated pull-up structure to the VIO supply pin. If STB is open, the device is set to Standby mode to
ensure predictable behavior and minimize system current consumption.
The TXD input pin also has an internal integrated pull-up structure to the VIO supply pin. If TXD is open, the CAN driver is set to the
recessive state to minimize current consumption and ensure that no false dominant bit is transmitted on the bus.
4.4.2
TXD Dominant Timeout Detection
If TXD is set low for a time longer than the TXD DOM parameter, the CAN drivers are disabled and the CAN bus returns to recessive state.
This prevents the bus from being set to the dominant state permanently in case a fault sets the TXD input to low level permanently.
The device recovers from this when a high level is detected on TXD. Refer to Figures 12.
4.4.3
CAN Current Limitation
The current flowing in and out of the CANH and CANL driver is limited to a maximum of 100 mA, in case of a short-circuit (parameter for
ILIM).
4.4.4
CAN Overtemperature
If the driver temperature exceeds TSD, the driver is turned off to protect the device. A hysteresis is implemented in this protection feature.
The device overtemperature and recovery conditions are shown in Figure 7 “Overtemperature behavior”. The driver remains disabled until
the temperature has fallen below the OT threshold minus the hysteresis and a TXD high to low transition is detected.
Overtemperature Threshold
Temperature
Hysteresis
Hysteresis
Event 1
Event 1
Event 2
Event 2
Event 4
Event 3
TXD
Event 3
high
low
dominant
recessive
dominant
dominant
BUS
Event 1: overtemperature detection. CAN driver disable.
Event 2: temperature falls below “overtemperature threshold minus hysteresis” => CAN driver remains disable.
Event 3: temperature below “overtemperature threshold minus hysteresis” and TxD high to low transition => CAN driver enable.
Event 4: temperature above “overtemperature threshold minus hysteresis” and TxD high to low transition => CAN driver remains disable.
Figure 7. Overtemperature behavior
4.4.5
VDD and VIO Supply Voltage Monitoring
For MC3x901WEF and MC3x901SEF versions:
The device monitors the VDD and VIO supply inputs. If VDD falls below VDD UV (VDD_UV), the device is set in Standby mode. This ensures
a predictable behavior due to the loss of VDD. CAN driver, receiver, or bus biasing cannot operate any longer. In this case, the bus wakeup is available as VIO remains active.
If VIO falls below VIO UV (VIO_UV), the device is set to an unpowered condition. This ensures a predictable behavior due to the loss of
VIO, CAN driver, receiver, or bus biasing can not operate any longer. This sets the bus in high-impedance and in ideal passive behavior.
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Analog Integrated Circuit Device Data
Freescale Semiconductor
11
For MC3x901WNEF and MC3x901SNEF versions:
As VIO is internally connected to VDD, VIO voltage depends on the VDD supply. If VDD is between VIO_UV and VDD_UV, the device is set in
Standby mode. If VDD is below VIO UV, the device is set in unpowered mode.
4.4.6
Bus Dominant State Behavior in Standby Mode
In device Standby mode, a bus dominant condition due, for instance to a short-circuit or a fault in one of the other CAN nodes, does not
generate a permanent wake-up event, by virtue of the multiple events (dominant, recessive, dominant) and timeout required to detect and
report bus wake-ups.
4.5
Device Operation Summary
The following table summarizes the device operation and the state of the input output pins, depending on the operating mode and power
supply conditions.
Table 6. Operation for VIO Devices
STANDBY AND NORMAL MODES FOR MC3X901 VERSION
MODE
Normal
Standby
Description
Nominal
supply and
normal mode
VDD
range
from
4.5 V to
5.5 V
VIO
range
from 2.8 V
to 5.5 V
STB
TXD
RXD
CAN
Low
TXD High
=> bus
recessive
TXD Low
=> bus
dominant
Report CAN state
(bus recessive =>
RXD high, bus
dominant => RXD
low).
CANH and CANL drivers
controlled by TXD input.
Differential receiver report bus
state on RXD pins.
Biasing circuitry provides approx
2.5 in recessive state.
Disabled
No effect.
on CAN
bus.
Report bus wake
up via toggling
mechanism for
MC3x901WNEF.
RXD High level for
MC3x901SNEF
CAN driver and differential
receiver disabled.
Bus biased to GND via internal RIN
resistors for MC3x901WNEF.
Bus high-impedance for
MC3x901SNEF.
Enabled on
MC3x901WNEF
Not available on
MC3x901SNEF
Nominal
from 0 V from 2.8 V High or
supply and
to 5.5 V
to 5.5 V floating
standby mode
Wake-up
UNDERVOLTAGE AND LOSS OF POWER CONDITIONS FOR MC3X901 VERSION
MODE
Description
VDD
range
VIO
range
Device in
standby mode from 0 V from 2.8 V
Standby
to
due to loss of
to 5.5 V
due to VDD
VDD (VDD fall VDD_UV
(5)
loss
(4)
below VDD
UV)
Device in
unpowered
Unpowered
state due to
due to VIO
low VIO. CAN
loss
bus highimpedance
(4)
from 0 V to
VIO_UV
STB
X
(3)
X
TXD
RXD
CAN
Wake up
X
Report bus wake
up via toggling
mechanism for
MC3x901WEF.
RXD High level for
MC3x901SEF
CAN driver and differential
receiver disabled.
Bus biased to GND via internal RIN
resistors for MC3x901WEF.
Bus high-impedance for
MC3x901SEF.
Enabled on
MC33901WEF
Not available on
MC33901SEF.
X
Pulled up to VIO
down to VIO
approx 1.5 V.
CAN driver and differential
receiver disabled.
High-impedance, with ideal
passive behavior.
Not available.
Notes
3. STB pin has no effect. Device enters in standby mode.
4. VDD consumption < 10 uA down to VDD approx 1.5 V.
5. VIO consumption < 10 uA down to VIO approx 1.5 V. If STB is high or floating.
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Freescale Semiconductor
Table 7. Operation for Non-VIO Devices
STANDBY AND NORMAL MODES FOR MC3X901N VERSIONS
MODE
Description
VDD range
Normal
Nominal
supply and
normal mode
from 4.5 V
to 5.5 V
Standby
Nominal
supply and
standby mode
from 2.8 V
to 5.5 V
STB
TXD
RXD
CAN
Low
TXD High
=> bus recessive
TXD Low
=> bus dominant
Report CAN state
(bus recessive =>
RXD high, bus
dominant => RXD
low)
CANH and CANL drivers controlled
by TXD input. Differential receiver
report bus state on RXD pins.
Biasing circuitry provides approx 2.5
in recessive state
Disabled
No effect. on
CAN bus.
Report bus wake up
via toggling
mechanism for
MC3x901WEF.
RXD High level for
MC3x901SEF
CAN driver and differential receiver
disabled.
Bus biased to GND via internal RIN
resistors for MC3x901WEF.
Bus high-impedance for
MC3x901SEF
Enabled on
MC33901WEF
Not available on
MC33901SEF
High or
floating
Wake-up
UNDERVOLTAGE AND LOSS OF POWER CONDITIONS FOR MC3X901N VERSIONS
MODE
Description
VDD range
Device in
unpowered
Unpowered state due to
due to VDD low VDD and
loss
so VIO. CAN
bus highimpedance
from 0 V to
VIO_UV
STB
X
TXD
X
RXD
Pulled up to VIO
down to VIO
approx 1.5 V.
CAN
CAN driver and differential receiver
disabled.
High-impedance, with ideal passive
behavior
Wake-up
Not available.
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Freescale Semiconductor
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4.6
Electrical Characteristics
Table 8. Static Electrical Characteristics
Characteristics noted under conditions 4.5 V VDD 5.5 V, 2.8 V VIO 5.5 V, - 40 C TA 125 C, GND = 0 V, R on CAN bus
(RL) = 60 , unless otherwise noted. Typical values noted reflect the approximate parameter at TA = 25 °C under nominal conditions,
unless otherwise noted.
Symbol
Characteristic
Min
Typ
Max
Unit
Notes
POWER INPUT VDD
VDD
VDD Supply Voltage Range
• Nominal Operation
4.5
–
5.5
V
VDD_UV
VDD Undervoltage threshold
3.0
–
4.5
V
–
–
–
–
–
40
–
—
5.0
65
5.0
15
mA
mA
µA
µA
2.8
–
5.5
V
VIO Under voltage threshold
–
–
2.8
V
VIO supply current
• Normal mode, TXD high
• Normal mode, TXD low or CAN bus in dominant state
• Standby mode, CAN bus in recessive state
• Standby mode, wake-up filter and wake-up time out running
–
–
–
–
–
–
5.0
–
200
1.0
10
150
µA
mA
µA
µA
0.7
–
200
–
–
–
–
0.3
–
VIO
V
mV
–
100
–
k
Input voltages
• High level Input Voltage
• Low level input voltage
• Input threshold hysteresis
0.7
–
200
–
–
300
–
0.3
–
VIO
V
mV
Pull-up resistor to VIO
5.0
–
50
k
Output current
• RXD high, VRXD high = VIO - 0.4 V
• RXD low, VRXD high = 0.4 V
-5.0
1.0
-2.5
2.5
-1.0
5.0
25
50
90
IVDD
VDD supply current
• Normal mode, TXD High
• Normal mode, TXD Low
• Standby mode (MC3x901)
• Standby mode (MC3x901N)
POWER INPUT VIO
VIO
VIO_UV
IVIO
Vio Supply Voltage Range
• Nominal Operation
STB INPUT
VSTB
RPU-STB
Input voltages
• High level Input Voltage
• Low level input voltage
• Input threshold hysteresis
Pull-up resistor to VIO
TXD INPUT
VTXD
RPU-TXD
RXD OUTPUT
IRXD
RPU-RXD
Pull-up resistor to VIO (in standby mode, without toggling - no wake-up
report)
mA
k
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Analog Integrated Circuit Device Data
Freescale Semiconductor
Table 8. Static Electrical Characteristics (continued)
Characteristics noted under conditions 4.5 V VDD 5.5 V, 2.8 V VIO 5.5 V, - 40 C TA 125 C, GND = 0 V, R on CAN bus
(RL) = 60 , unless otherwise noted. Typical values noted reflect the approximate parameter at TA = 25 °C under nominal conditions,
unless otherwise noted.
Symbol
Characteristic
Min
Typ
Max
Unit
Recessive voltage, TXD high, no load
• CANL recessive voltage
• CANH recessive voltage
2.0
2.0
2.5
2.5
3.0
3.0
V
VDIFF_REC
CANH - CANL differential recessive voltage, TXD high, no load
-50
–
50
mV
VREC_SM
Recessive voltage, sleep mode, no load
• CANL recessive voltage
• CANH recessive voltage
-0.1
-0.1
–
–
0.1
0.1
V
Dominant voltage, TXD low (t < TXDOM), RL = 45 to 65
• CANL dominant voltage
• CANH dominant voltage
0.5
2.75
–
–
2.25
4.5
V
CANH - CANL differential dominant voltage, RL = 45 to 65
TxDLOW
1.5
2.0
3.0
V
Driver symmetry CANH + CANL
0.9
1.0
1.1
VDD
40
-100
–
–
100
-40
mA
Notes
CANL AND CANH TERMINALS
VREC
VDOM
VDIFF_DOM
VSYM
ILIM
Current limitation, TXD low (t < TXDOM)
• CANL current limitation, CANL 5.0 V to 28 V
• CANH current limitation, CANH = 0 V
VDIFF_THR
CANH - CANL Differential input threshold
0.5
–
0.9
V
VDIFF_HYS
CANH - CANL Differential input voltage hysteresis
50
–
400
mV
CANH - CANL Differential input threshold, in standby mode
0.4
–
1.15
V
VCM
Common Mode Voltage
-12
–
12
V
RIN
Input resistance
• CANL input resistance
• CANH input resistance
5.0
5.0
–
–
50
50
k
CANH, CANL differential input resistance
10
–
100
k
Input resistance matching
-3.0
–
3.0
%
IIN_UPWR
CANL or CANH input current, device unpowered, VDD = VIO = 0 V,
VCANL and VCANH 0 V to 5.0 V range
• VDD connected with R = 0 k to GND
• VDD connected with R=47 k to GND
-10
-10
–
–
10
10
RIN_UPWR
CANL, CANH input resistance, VCANL = VCANH = 12 V
10
–
–
k
CCAN_CAP
CANL, CANH input capacitance (guaranteed by design and
characterization)
–
20
–
pF
CDIF_CAP
CANL, CANH differential input capacitance (guaranteed by design
and characterization)
–
10
–
pF
150
185
–
°C
VDIFF_THR_S
RIN_DIFF
RIN_MATCH
TSD
Temperature Shutdown
µA
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Table 9. Dynamic Electrical Characteristics
Characteristics noted under conditions 4.5 V VDD 5.5 V, 2.8 V VIO 5.5 V, - 40 C TA 125 C, GND = 0 V, R on CAN bus (RL) =
60 , unless otherwise noted. Typical values noted reflect the approximate parameter at TA = 25 °C under nominal conditions, unless
otherwise noted.
Symbol
Characteristic
Min
Typ
Max
Unit
Notes
2.5
–
16
ms
(6)
–
–
255
ns
TIMING PARAMETERS
tXDOM
TXD DOM
tLOOP
T loop
tWU_FLT1
TWU filter1
0.5
–
5.0
µs
(7)
tWU_FLT2
TWU filter2
0.08
–
1.0
µs
(7)
–
–
1.3
µs
(7)
1.5
–
7.0
ms
(7)
–
120
300
µs
40
us
tTGLT
tWU_TO
tDELAY_PWR
tDELAY_SN
Tdelay during toggling
Twake up timeout
Delay between power-up and device ready
Transition time from Standby to Normal mode (STB high to low)
Notes
6. MC33901 & MC33901N versions only
7. MC3x901WEF and MC3x901WNEF versions only
5.0 V
1.0 F
100 nF
VIO
STB
VDD
CANH
MC33901
TXD
60
100 pF
CANL
RXD
15 pF
GND
Figure 8. Timing Test Circuit
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Analog Integrated Circuit Device Data
Freescale Semiconductor
high
TXD
low
CANH
CANL
dominant
0.9 V
VDIFF
(CANH - CANL)
0.5 V
recessive
high
0.7 VIO
RXD
0.3 VIO
low
tLOOP (R-D)
tLOOP (D-R)
Figure 9. CAN Timing Diagram
recessive
dominant
dominant
recessive
dominant
recessive
BUS
t_WUFL1
t_WUFL2
1st event
2nd event
t_WUFL2
3rd event
T_TOG
T_TOG
T_TOG
T_TOG
high
RXD
low
t_WUTO
note: 1st, 2nd and 3rd event must occurs within t_WUTO timing.
Figure 10. Wake-up Pattern Timing Illustration
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Freescale Semiconductor
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dominant
recessive
dominant
recessive
BUS
t_WUFL1
1st event
t_WUFL1
t_wUFL2
2nd event
1st event
t_WUFL2
2nd event
t_WUTO (expired)
high
RXD
note: only the 1st and the 2nd event occurred within t_WUTO timing.
Figure 11. Timeout Wake-up Timing Illustration
recovery condition: TXD high
high
TXD
low
dominant
recessive
dominant
dominant
BUS
TXD_dom timeout
TXD_dom timeout
TXD_dom timeout
TXD dom timeout expired
RXD
high
low
Figure 12. TXD Dominant Timeout Detection Illustration
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Analog Integrated Circuit Device Data
Freescale Semiconductor
5
5.1
Typical Applications
Application Diagrams
VPWR
D
5.0 V Reg.
VCC
MCU
5.0 V
C1
VIO
VDD
CANH
STB
Port_xx
MC3x901xEF
TXD
TXD
CAN
controller
RXD
R1
CANL
RXD
C1: 1.0 µF
R1: application dependant
(ex: 60, 120 ohm or other value)
GND
Figure 13. Single Supply Typical Application Schematic for MC3x901xEF
VPWR
D
5.0 V Reg.
VCC
MCU
Port_xx
5.0 V
VDD
C1
CANH
STB
MC3x901xNEF
TXD
CAN
controller
RXD
TXD
R1
CANL
RXD
GND
C1: 1.0 µF
R1: application dependant
(ex: 60, 120 ohm or other value)
Figure 14. Single Supply Typical Application Schematic for MC3x901xNEF
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Freescale Semiconductor
19
5.0 V Reg
VPWR
D
5.0 V
C2
3.3-5.0 V Reg 3.3 - 5.0 V
VCC
MCU
C1
VIO
VDD
STB
Port_xx
CANH
MC3x901xEF
TXD
TXD
CAN
controller
RXD
R1
CANL
RXD
GND
C1: 1.0 µF
C2: 1.0 µF
R1: application dependant
(ex: 60, 120 ohm or other value)
Figure 15. Dual Supply Typical Application Schematic for MC3x901xEF
CANH
C3
R2
R2, R3: application dependant
(ex: 60 ohm or other value):
R3
C3: application dependant
(ex: 4.7 nF or other value):
CANL
Figure 16. Example of Bus Termination Options
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Analog Integrated Circuit Device Data
Freescale Semiconductor
6
6.1
Packaging
Package Mechanical Dimensions
Package dimensions are provided in package drawings. To find the most current package outline drawing, go to www.freescale.com and
perform a keyword search for the drawing’s document number.
Table 10. Packaging Information
Package
Suffix
8-Pin SOICN
EF
Package Outline Drawing Number
98ASA42564B
.
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Freescale Semiconductor
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.
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Analog Integrated Circuit Device Data
Freescale Semiconductor
7
Revision History
REVISION
1.0
2.0
3.0
DATE
DESCRIPTION OF CHANGES
12/2013
4/2015
6/2015
•
Initial release
•
Changed Advance Information to Technical Data
•
Added information for high-speed (up to 1.0 Mbit/s)
•
Added VREC_SM (CANH, CANL recessive voltage, sleep mode) to Table 7
•
Added VSYM (Driver symmetry) to Table 7
•
Added IIN_UPWR to Table 7
•
Added MC33901xNEF and MC34901xNEF parts to Table 1, Orderable Parts
•
Added additions to all figures and tables to include the variations for the new part numbers
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Freescale Semiconductor
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Document Number: MC33901
Rev. 3.0
6/2015