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MC9S08JE64CLH

MC9S08JE64CLH

  • 厂商:

    NXP(恩智浦)

  • 封装:

    LQFP-64

  • 描述:

    IC MCU 8BIT 64KB FLASH 64LQFP

  • 数据手册
  • 价格&库存
MC9S08JE64CLH 数据手册
Freescale Semiconductor Data Sheet: Advanced Information Document Number: MC9S08JE128 Rev. 3, 04/2010 An Energy-Efficient Solution from Freescale MC9S08JE128 series Covers: MC9S08JE128 and MC9S08JE64 – 64-LQFP 10mm x 10mm 8-Bit HCS08 Central Processor Unit (CPU) – – – Up to 48-MHz CPU above 2.4 V, 40 MHz CPU above 2.1 V, and 20 MHz CPU above 1.8 V across temperature of -40°C to 105°C HCS08 instruction set with added BGND instruction Support for up to 32 interrupt/reset sources On-Chip Memory – – – 128 K Dual Array Flash read/program/erase over full operating voltage and temperature 12 KB Random-access memory (RAM) Security circuitry to prevent unauthorized access to RAM and Flash – – – Power-Saving Modes – – – Two ultra-low power stop modes. Peripheral clock enable register can disable clocks to unused modules to reduce currents Time of Day (TOD) — Ultra-low power 1/4 sec counter with up to 64s timeout. Ultra-low power external oscillator that can be used in stop modes to provide accurate clock source to the TOD. 6 usec typical wake up time from stop3 mode Clock Source Options – – – Oscillator (XOSC1) — Loop-control Pierce oscillator; 32.768 kHz crystal or ceramic resonator dedicated for TOD operation. Oscillator (XOSC2) — for high frequency crystal input for MCG reference to be used for system clock and USB operations. Multipurpose Clock Generator (MCG) — PLL and FLL; precision trimming of internal reference allows 0.2% resolution and 2% deviation over temperature and voltage; supports CPU frequencies from 4 kHz to 48 MHz. System Protection – – – – – – – – – – Watchdog computer operating properly (COP) reset Watchdog computer operating properly (COP) reset with option to run from dedicated 1-kHz internal clock source or bus clock Low-voltage detection with reset or interrupt; selectable trip points; separate low-voltage warning with optional interrupt; selectable trip points Illegal opcode and illegal address detection with reset Flash block protection for each array to prevent accidental write/erasure Hardware CRC to support fast cyclic redundancy checks – – Single-wire background debug interface Real-time debug with 6 hardware breakpoints (4 PC, 1 address and 1 data) Breakpoint capability to allow single breakpoint setting during in-circuit debugging On-chip in-circuit emulator (ICE) debug module containing 3 comparators and 9 trigger modes 81-MapBGA 10mm x10mm byte-by-byte data transfer; supports broadcast mode and 11-bit addressing PRACMP — Analog comparator with selectable interrupt; compare option to programmable internal reference voltage; operation in stop3 SCI — Two serial communications interfaces with optional 13-bit break; option to connect Rx input to PRACMP output on SCI1 and SCI2; High current drive on Tx on SCI1 and SCI2; wake-up from stop3 on Rx edge SPI1— Serial peripheral interface (SPI) with 64-bit FIFO buffer; 16-bit or 8-bit data transfers; full-duplex or single-wire bidirectional; double-buffered transmit and receive; master or slave mode; MSB-first or LSB-first shifting SPI2— Serial peripheral interface with full-duplex or single-wire bidirectional; Double-buffered transmit and receive; Master or Slave mode; MSB-first or LSB-first shifting TPM — Two 4-channel Timer/PWM Module; Selectable input capture, output compare, or buffered edge- or center-aligned PWM on each channel; external clock input/pulse accumulator USB — Supports USB in full-speed device configuration. On-chip transceiver and 3.3V regulator help save system cost, fully compliant with USB Specification 2.0. Allows control, bulk, interrupt and isochronous transfers. ADC12 — 12-bit Successive approximation ADC with up to 4 dedicated differential channels and 8 single-ended channels; range compare function; 1.7 mV/°C temperature sensor; internal bandgap reference channel; operation in stop3; fully functional from 3.6V to 1.8V, Configurable hardware trigger for 8 Channel select and result registers PDB — Programmable delay block with 16-bit counter and modulus and prescale to set reference clock to bus divided by 1 to bus divided by 2048; 8 trigger outputs for ADC12 module provides periodic coordination of ADC sampling sequence with sequence completion interrupt; Back-to-Back mode and Timed mode DAC — 12-bit resolution; 16-word data buffers with configurable watermark. Input/Output – – – Development Support – – 80-LQFP 12mm x 12mm – Up to 47 GPIOs and 2 output-only pin and 1 input-only pin. Voltage Reference output (VREFO). Dedicated infrared output pin (IRO) with high current sink capability. Up to 16 KBI pins with selectable polarity. Package Options – – – 81-MBGA 10x10 mm 80-LQFP 12x12 mm 64-LQFP 10x10 mm Peripherals – – CMT— Carrier Modulator timer for remote control communications. Carrier generator, modulator and driver for dedicated infrared out. Can be used as an output compare timer. IIC— Up to 100 kbps with maximum bus loading; Multi-master operation; Programmable slave address; Interrupt driven This document contains information on a new product. Specifications and information herein are subject to change without notice. © Freescale Semiconductor, Inc., 2009-2010. All rights reserved. Preliminary — Subject to Change Contents 1 Devices in the MC9S08JE128 series.................. 3 2 Preliminary Electrical Characteristics............. 12 2.1 Parameter Classification ......................................................... 2.2 Absolute Maximum Ratings .................................................... 2.3 Thermal Characteristics .......................................................... 2.4 Electrostatic Discharge (ESD) Protection Characteristics ...... 2.5 DC Characteristics .................................................................. 2.6 Supply Current Characteristics ............................................... 2.7 Comparator (PRACMP) Electricals......................................... 2.8 12-Bit Digital-to-Analog Converter (DAC12LV) Electricals ...... 2.9 ADC Characteristics................................................................ 2.10 MCG and External Oscillator (XOSC) Characteristics .......... 2.11 AC Characteristics ................................................................ 2.12 SPI Characteristics ............................................................... 2.13 Flash Specifications .............................................................. 2.14 USB Electricals ..................................................................... 12 13 14 15 16 19 21 22 23 28 31 32 35 36 2.15 VREF Specifications............................................................. 35 3 Ordering Information......................................... 41 3.1 Device Numbering System..................................................... 42 3.2 Package Information............................................................... 42 3.3 Mechanical Drawings ............................................................. 42 4 Revision History ................................................ 43 Related Documentation Find the most current versions of all documents at: http://www.freescale.com. Reference Manual —MC9S08JE128RM Contains extensive product information including modes of operation, memory, resets and interrupts, register definition, port pins, CPU, and all module information. – This document contains information on a new product. Specifications and information herein are subject to change without notice. © Freescale Semiconductor, Inc., 2009-2010. All rights reserved. Preliminary — Subject to Change Devices in the MC9S08JE128 series 1 Devices in the MC9S08JE128 series The following table summarizes the feature set available in the MC9S08JE128 series of MCUs. Table 1. MC9S08JE128 series Features by MCU and Package Feature Pin quantity MC9S08JE128 81 FLASH size (bytes) 80 64 MC9S08JE64 64 131072 65535 RAM size (bytes) 12K 12K Programmable Analog Comparator (PRACMP) yes yes Debug Module (DBG) yes yes Multipurpose Clock Generator (MCG) yes yes Inter-Integrated Communication (IIC) yes yes Interrupt Request Pin (IRQ) yes yes Keyboard Interrupt (KBI) 16 16 7 7 Port I/O1 47 46 33 33 Dedicated Analog Input Pins 12 12 Power and Ground Pins 8 8 Time Of Day (TOD) yes yes Serial Communications (SCI1) yes yes Serial Communications (SCI2) yes yes Serial Peripheral Interface 1 (SPI1 (FIFO)) yes yes Serial Peripheral Interface 2 (SPI2) yes yes Carrier Modulator Timer pin (IRO) yes yes TPM input clock pin (TPMCLK) yes yes 4 4 TPM1 channels TPM2 channels 4 4 2 2 XOSC1 yes yes XOSC2 yes yes USB yes yes Programmable Delay Block (PDB) yes yes SAR ADC differential channels2 4 4 3 3 SAR ADC single-ended channels 8 8 6 6 Voltage reference output pin (VREFO) 1 2 yes yes Port I/O count does not include two (2) output-only and one (1) input-only pins. Each differential channel is comprised of 2 pin inputs. Freescale Semiconductor 3 Preliminary — Subject to Change Devices in the MC9S08JE128 series A complete description of the modules included on each device is provided in the following table. Table 2. Versions of On-Chip Modules Module Version Analog-to-Digital Converter (ADC12) 1 Digital to Analog Converter (DAC) 1 Programmable Delay Block 1 Inter-Integrated Circuit (IIC) 3 Central Processing Unit (CPU) 5 On-Chip In-Circuit Debug/Emulator (DBG) 3 Multi-Purpose Clock Generator (MCG) 3 Low Power Oscillator (XOSCVLP) 1 Carrier Modulator Timer (CMT) 1 Programable Analog Comparator (PRACMP) 1 Serial Communications Interface (SCI) 4 Serial Peripheral Interface (SPI) 5 Time of Day (TOD) 1 Universal Serial Bus (USB) 1 Timer Pulse-Width Modulator (TPM) 3 System Integration Module (SIM) 1 Cyclic Redundancy Check (CRC) 3 Keyboard Interrupt (KBI) 2 Voltage Reference (VREF) 1 Voltage Regulator (VREG) 1 Interrupt Request (IRQ) 3 Flash Wrapper 1 GPIO 2 Port Control 1 The block diagram in Figure 1 shows the structure of the MC9S08JE128 series MCU. 4 Freescale Semiconductor Preliminary — Subject to Change Devices in the MC9S08JE128 series Figure 1. MC9S08JE128 series Block Diagram Freescale Semiconductor 5 Preliminary — Subject to Change Devices in the MC9S08JE128 series 1.1 Pin Assignments This section shows the pin assignments for the MC9S08JE128 series devices. 1.1.1 64-Pin LQFP PTA0/SS1 IRO PTA4 PTA5 PTA6 PTA7 PTB0 PTB1/BLMS VSSA VREFL NC NC DADP2 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 64-LQFP 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 PTD7/RX1 PTD6/TX1 PTD5/SCL/TPM1CH3 PTD4/SDA/TPM1CH2 PTD3/TPM1CH1 PTD2/TPM1CH0 PTD1/CMPP2/RESET PTD0/BKGD/MS PTC7/KBI2P2/CLKOUT/ADP11 PTC6/KBI2P1/PRACMPO/ADP10 PTC5/KBI2P0/CMPP1/ADP9 PTC4/KBI1P7/CMPP0/ADP8 PTC3/KBI1P6/SS2/ADP7 PTC2/KBI1P5/SPSCK2/ADP6 PTC1/MISO2 PTC0/MOSI2 VREFH VDDA VSS2 PTB2/EXTAL1 PTB3/XTAL1 VDD2 PTB4/EXTAL2 PTB5/XTAL2 NC DACO DADP3 NC DADM3 DADP0 DADM0 VREFO 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 DADM2 NC 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 PTG0/SPSCK1 PTF7/MISO1 PTF6/MOSI1 VDD1 VSS1 VBUS USB_DP USB_DM VUSB33 PTF2/TX2/TPM2CH0 PTF1/RX2/TPM2CH1 PTE6/RX2 PTE5/TX2 VDD3 VSS3 PTE4/CMPP3/TPMCLK/IRQ The following two figures show the 64-pin LQFP pinout configuration. Figure 2. 64-Pin LQFP 6 Freescale Semiconductor Preliminary — Subject to Change Devices in the MC9S08JE128 series 1.1.2 80-Pin LQFP PTA0/SS1 IRO PTA1/KBI1P0/TX1 PTA2/KBI1P1/RX1/ADP4 PTA3/KBI1P2/ADP5 PTA4 PTA5 PTA6 PTA7 PTB0 PTB1/BLMS VSSA VREFL NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 80-LQFP 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 PTE4/CMPP3/TPMCLK/IRQ PTE3/KBI2P6 PTE2/KBI2P5 PTE1/KBI2P4 PTE0/KBI2P3 PTD7/RX1 PTD6/TX1 PTD5/SCL/TPM1CH3 PTD4/SDA/TPM1CH2 PTD3/TPM1CH1 PTD2/TPM1CH0 PTD1/CMPP2/RESET PTD0/BKGD/MS PTC7/KBI2P2/CLKOUT/ADP11 PTC6/KBI2P1/PRACMPO/ADP10 PTC5/KBI2P0/CMPP1/ADP9 PTC4/KBI1P7/CMPP0/ADP8 PTC3/KBI1P6/SS2/ADP7 PTC2/KBI1P5/SPSCK2/ADP6 PTC1/MISO2 DADM0 VREFO DADP1 DADM1 VREFH VDDA VSS2 PTB2/EXTAL1 PTB3/XTAL1 VDD2 PTB4/EXTAL2 PTB5/XTAL2 PTB6/KBI1P3 PTB7/KBI1P4 PTC0/MOSI2 DACO DADP3 NC DADM3 DADP0 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 DADP2 NC DADM2 NC NC 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 PTG0/SPSCK1 PTF7/MISO1 PTF6/MOSI1 VDD1 VSS1 VBUS USB_DP USB_DM VUSB33 PTF5/KBI2P7 PTF4/SDA PTF3/SCL PTF2/TX2/TPM2CH0 PTF1/RX2/TPM2CH1 PTF0/TPM2CH2 PTE7/TPM2CH3 PTE6/RX2 PTE5/TX2 VDD3 VSS3 The following figure shows the 80-pin LQFP pinout configuration. Figure 3. 80-Pin LQFP Freescale Semiconductor 7 Preliminary — Subject to Change Devices in the MC9S08JE128 series 1.1.3 81-Pin MAPBGA The following figure shows the 81-pin MAPBGA pinout configuration. 1 2 3 4 5 6 7 8 9 A IRO PTG0 PTF6 USB_DP VBUS VUSB33 PTF4 PTF3 PTE4 B PTF7 PTA0 PTG1 USB_DM PTF5 PTE7 PTF1 PTF0 PTE3 C PTA4 PTA5 PTA6 PTA1 PTF2 PTE6 PTE5 PTE2 PTE1 D PTA7 PTB0 PTB1 PTA2 PTA3 PTD5 PTD7 PTE0 E DADM2 VDD2 VDD3 VDD1 PTD2 PTD3 PTD6 F DADP2 VSS2 VSS3 VSS1 PTB7 PTC7 PTD4 DADM3 VREFO PTB6 PTC0 PTC1 PTC2 PTC3 PTC4 PTD0 PTC5 PTC6 PTB2 PTB3 PTD1 PTB4 PTB5 G DADP0 DACO DADP3 H DADM0 DADM1 DADP1 J VSSA VREFL VREFH VDDA Figure 4. 81-Pin MAPBGA 8 Freescale Semiconductor Preliminary — Subject to Change Devices in the MC9S08JE128 series 1.2 Pin Assignments by Packages Table 3. Package Pin Assignments 81 MAPBGA 80 LQFP 64 LQFP Package Default Function B2 1 1 PTA0 SS1 — — PTA0/SS1 A1 2 2 IRO — — — IRO C4 3 — PTA1 KBI1P0 TX1 — PTA1/KBI1P0/TX1 D5 4 — PTA2 KBI1P1 RX1 ADP4 PTA2/KBI1P1/RX1/ADP4 D6 5 — PTA3 KBI1P2 ADP5 — PTA3/KBI1P2/ADP5 C1 6 3 PTA4 — — — PTA4 C2 7 4 PTA5 — — — PTA5 C3 8 5 PTA6 — — — PTA6 D2 9 6 PTA7 — — — PTA7 D3 10 7 PTB0 — — — PTB0 D4 11 8 PTB1 BLMS — — PTB1/BLMS J1 12 9 VSSA — — — VSSA J2 13 10 VREFL — — — VREFL D1 14 11 NC — — — NC E1 15 12 NC — — — NC F2 16 13 DADP2 — — — DADP2 F1 17 14 NC — — — NC E2 18 15 DADM2 — — — DADM2 F3 19 16 NC — — — NC E3 20 17 NC — — — NC G2 21 18 DACO — — — DACO G3 22 19 DADP3 — — — DADP3 H4 23 20 NC — — — NC G4 24 21 DADM3 — — — DADM3 G1 25 22 DADP0 — — — DADP0 H1 26 23 DADM0 — — — DADM0 G5 27 24 VREFO — — — VREFO H3 28 — DADP1 — — — DADP1 H2 29 — DADM1 — — — DADM1 ALT1 ALT2 ALT3 Composite Pin Name Freescale Semiconductor 9 Preliminary — Subject to Change Devices in the MC9S08JE128 series Table 3. Package Pin Assignments (Continued) 81 MAPBGA 80 LQFP 64 LQFP Package Default Function J3 30 25 VREFH — — — VREFH J4 31 26 VDDA — — — VDDA F4 32 27 VSS2 — — — VSS2 J5 33 28 PTB2 EXTAL1 — — PTB2/EXTAL1 J6 34 29 PTB3 XTAL1 — — PTB3/XTAL1 E4 35 30 VDD2 — — — VDD2 J8 36 31 PTB4 EXTAL2 — — PTB4/EXTAL2 J9 37 32 PTB5 XTAL2 — — PTB5/XTAL2 G6 38 — PTB6 KBI1P3 — — PTB6/KBI1P3 F7 39 — PTB7 KBI1P4 — — PTB7/KBI1P4 G7 40 33 PTC0 MOSI2 — — PTC0/MOSI2 G8 41 34 PTC1 MISO2 — — PTC1/MISO2 G9 42 35 PTC2 KBI1P5 SPSCK2 ADP6 PTC2/KBI1P5/SPSCK2/ADP6 H5 43 36 PTC3 KBI1P6 SS2 ADP7 PTC3/KBI1P6/SS2/ADP7 H6 44 37 PTC4 KBI1P7 CMPP0 ADP8 PTC4/KBI1P7/CMPP0/ADP8 H8 45 38 PTC5 KBI2P0 CMPP1 ADP9 PTC5/KBI2P0/CMPP1/ADP9 H9 46 39 PTC6 KBI2P1 PRACMPO ADP10 PTC6/KBI2P1/PRACMPO/ADP10 F8 47 40 PTC7 KBI2P2 CLKOUT ADP11 PTC7/KBI2P2/CLKOUT/ADP11 H7 48 41 PTD0 BKGD MS — PTD0/BKGD/MS J7 49 42 PTD1 CMPP2 RESET — PTD1/CMPP2/RESET E7 50 43 PTD2 TPM1CH0 — — PTD2TPM1CH0 E8 51 44 PTD3 TPM1CH1 — — PTD3/TPM1CH1 F9 52 45 PTD4 SDA TPM1CH2 — PTD4/SDA/TPM1CH2 D7 53 46 PTD5 SCL TPM1CH3 — PTD5/SCL/TPM1CH3 E9 54 47 PTD6 TX1 — — PTD6/TX1 D8 55 48 PTD7 RX1 — — PTD7/RX1 D9 56 — PTE0 KBI2P3 — — PTE0/KBI2P3 C9 57 — PTE1 KBI2P4 — — PTE1/KBI2P4 C8 58 — PTE2 KBI2P5 — — PTE2/KBI2P5 B9 59 — PTE3 KBI2P6 — — PTE3/KBI2P6 A9 60 49 PTE4 CMPP3 TPMCLK IRQ PTE4/CMPP3/TPMCLK/IRQ ALT1 ALT2 ALT3 Composite Pin Name 10 Freescale Semiconductor Preliminary — Subject to Change Devices in the MC9S08JE128 series Table 3. Package Pin Assignments (Continued) 81 MAPBGA 80 LQFP 64 LQFP Package Default Function F5 61 50 VSS3 — — — VSS3 E5 62 51 VDD3 — — — VDD3 C7 63 52 PTE5 TX2 — — PTE5/TX2 C6 64 53 PTE6 RX2 — — PTE6/RX2 B6 65 — PTE7 TPM2CH3 — — PTE7/TPM2CH3 B8 66 — PTF0 TPM2CH2 — — PTF0/TPM2CH2 B7 67 54 PTF1 RX2 TPM2CH1 — PTF1/RX2/TPM2CH1 C5 68 55 PTF2 TX2 TPM2CH0 — PTF2/TX2/TPM2CH0 A8 69 — PTF3 SCL — — PTF3/SCL A7 70 — PTF4 SDA — — PTF4/SDA B5 71 — PTF5 KBI2P7 — — PTF5/KBI2P7 A6 72 56 VUSB33 — — — VUSB33 B4 73 57 USB_DM — — — USB_DM A4 74 58 USB_DP — — — USB_DP A5 75 59 VBUS — — — VBUS F6 76 60 VSS1 — — — VSS1 E6 77 61 VDD1 — — — VDD1 A3 78 62 PTF6 MOSI1 — — PTF6/MOSI1 B1 79 63 PTF7 MISO1 — — PTF7/MISO1 A2 80 64 PTG0 SPSCK1 — — PTG0/SPSCK1 B3 — — PTG1 — — — PTG1 ALT1 ALT2 ALT3 Composite Pin Name Freescale Semiconductor 11 Preliminary — Subject to Change Preliminary Electrical Characteristics 2 Preliminary Electrical Characteristics This section contains electrical specification tables and reference timing diagrams for the MC9S08JE128/64 microcontroller, including detailed information on power considerations, DC/AC electrical characteristics, and AC timing specifications. The electrical specifications are preliminary and are from previous designs or design simulations. These specifications may not be fully tested or guaranteed at this early stage of the product life cycle. These specifications will, however, be met for production silicon. Finalized specifications will be published after complete characterization and device qualifications have been completed. NOTE The parameters specified in this data sheet supersede any values found in the module specifications. 2.1 Parameter Classification The electrical parameters shown in this supplement are guaranteed by various methods. To give the customer a better understanding, the following classification is used and the parameters are tagged accordingly in the tables where appropriate: Table 4. Parameter Classifications P Those parameters are guaranteed during production testing on each individual device. C Those parameters are achieved by the design characterization by measuring a statistically relevant sample size across process variations. T Those parameters are achieved by design characterization on a small sample size from typical devices under typical conditions unless otherwise noted. All values shown in the typical column are within this category. D Those parameters are derived mainly from simulations. NOTE The classification is shown in the column labeled “C” in the parameter tables where appropriate. 12 Freescale Semiconductor Preliminary — Subject to Change Preliminary Electrical Characteristics 2.2 Absolute Maximum Ratings Absolute maximum ratings are stress ratings only, and functional operation at the maxima is not guaranteed. Stress beyond the limits specified in the following table may affect device reliability or cause permanent damage to the device. For functional operating conditions, refer to the remaining tables in this section. Table 5. Absolute Maximum Ratings # Rating Symbol Value Unit 1 Supply voltage VDD –0.3 to +3.8 V 2 Maximum current into VDD IDD 120 mA 3 Digital input voltage VIn –0.3 to VDD + 0.3 V 4 Instantaneous maximum current Single pin limit (applies to all port pins)1, 2, 3 ID ± 25 mA 5 Storage temperature range Tstg –55 to 150 °C 1 Input must be current limited to the value specified. To determine the value of the required current-limiting resistor, calculate resistance values for positive (VDD) and negative (VSS) clamp voltages, then use the larger of the two resistance values. 2 All functional non-supply pins are internally clamped to V SS and VDD. 3 Power supply must maintain regulation within operating V DD range during instantaneous and operating maximum current conditions. If positive injection current (VIn > VDD) is greater than IDD, the injection current may flow out of VDD and could result in external power supply going out of regulation. Ensure external VDD load will shunt current greater than maximum injection current. This will be the greatest risk when the MCU is not consuming power. Examples are: if no system clock is present, or if the clock rate is very low (which would reduce overall power consumption). This device contains circuitry protecting against damage due to high static voltage or electrical fields; however, it is advised that normal precautions be taken to avoid application of any voltages higher than maximum-rated voltages to this high-impedance circuit. Reliability of operation is enhanced if unused inputs are tied to an appropriate logic voltage level (for instance, either VSS or VDD). Freescale Semiconductor 13 Preliminary — Subject to Change Preliminary Electrical Characteristics 2.3 Thermal Characteristics This section provides information about operating temperature range, power dissipation, and package thermal resistance. Power dissipation on I/O pins is usually small compared to the power dissipation in on-chip logic and it is user-determined rather than being controlled by the MCU design. In order to take PI/O into account in power calculations, determine the difference between actual pin voltage and VSS or VDD and multiply by the pin current for each I/O pin. Except in cases of unusually high pin current (heavy loads), the difference between pin voltage and VSS or VDD will be very small. Table 6. Thermal Characteristics # Symbol 1 TA 2 TJMAX 3 θJA 4 θJA Rating Value °C Operating temperature range (packaged): MC9S08JE128 –40 to 105 MC9S08JE64 –40 to 105 Maximum junction temperature Unit 135 °C °C/W Thermal resistance1,2,3,4 Single-layer board — 1s 81-pin MBGA 77 80-pin LQFP 55 64-pin LQFP 68 °C/W Thermal resistance1, 2, 3, 4 Four-layer board — 2s2p 81-pin MBGA 47 80-pin LQFP 40 64-pin LQFP 49 1 Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal resistance. 2 Junction to Ambient Natural Convection 3 1s — Single layer board, one signal layer 4 2s2p — Four layer board, 2 signal and 2 power layers The average chip-junction temperature (TJ) in °C can be obtained from: TJ = TA + (PD × θJA) Eqn. 1 where: TA = Ambient temperature, °C θJA = Package thermal resistance, junction-to-ambient, °C/W PD = Pint + PI/O Pint = IDD × VDD, Watts — chip internal power PI/O = Power dissipation on input and output pins — user determined For most applications, PI/O 2.7 V — — V all digital 0.85 x VDD inputs, 2.7 V > VDD ≥ 1.8 V — C — All I/O pins, low-drive strength 1.8 V, ILoad = –600 μA C All I/O pins, high-drive strength 2.7 V, ILoad = –10 mA 3 IOHT Output high current VOL Output low voltage C Max total IOH for all ports — 4 P D All I/O pins, low-drive strength 1.8 V, ILoad = 600 μA C All I/O pins, high-drive strength 5 IOLT Output low current Max total IOL for all ports 6 VIH Input high voltage all digital inputs 16 P C D P — V P Freescale Semiconductor Preliminary — Subject to Change Preliminary Electrical Characteristics Table 9. DC Characteristics (Continued) Num Symbol 7 8 VIL 10 Min Typ1 Max Unit all digital inputs, VDD > 2.7 V — — 0.35 x VDD V all digital inputs, 2.7 > VDD ≥ 1.8 V — 0.30 x VDD V — 0.06 x VDD — — mV all input only VIn = VDD or pins VSS (Per pin) — — 0.25 (TBD) μA Input hysteresis |IIn| Input leakage current all digital inputs P all input/output VIn = VDD or (per pin) VSS — — 1(TBD) μA |IOZ| Leakage current for analog output pins (DACO, VREFO) all input/output VIn = VDD or (per pin) VSS — — (TBD) μA |IInT| Total Leakage Current3 13 RPU Pull-up resistors — RPD Internal pull-down resistors4 — 14 IIC DC injection current 5, 6, 7 For all pins C P Hi-Z (off-state) leakage current 12 15 — P |IOZ| 11 C Input low voltage all digital inputs Vhys 9 Condition Characteristic P P — — 2 μA D 17.5 — 52.5 kΩ P 17.5 — 52.5 kΩ P Single pin limit VSS > VIN > VDD –0.2 — 0.2 mA D Total MCU limit, includes sum of all stressed pins VSS > VIN > VDD –5 — 5 mA D Input Capacitance, all pins — — — 8 pF C 16 CIn 17 VRAM RAM retention voltage — — 0.6 1.0 V C 18 VPOR POR re-arm voltage8 — 0.9 1.4 1.79 V C 19 tPOR POR re-arm time — 10 — — μs D Freescale Semiconductor 17 Preliminary — Subject to Change Preliminary Electrical Characteristics Table 9. DC Characteristics (Continued) Num Symbol 20 Characteristic VLVDH9 Low-voltage detection threshold — high range Condition Min Typ1 Max Unit C — 2.11 2.16 2.22 V P — 2.16 2.23 2.27 V P — 1.80 1.84 1.88 V P — 1.88 1.93 1.96 V P — 2.36 2.46 2.56 V P — 2.36 2.46 2.56 V P — 2.11 2.16 2.22 V P — 2.16 2.23 2.27 V P VDD falling VDD rising VLVDL 21 Low-voltage detection threshold — low range9 VDD falling VDD rising 22 VLVWH Low-voltage warning threshold — high range9 VDD falling VDD rising 23 VLVWL Low-voltage warning threshold — low range9 VDD falling VDD rising 1 2 3 4 5 6 24 Vhys Low-voltage inhibit reset/recover hysteresis10 — — 50 — mV C 25 VBG Bandgap Voltage Reference11 — 1.15 1.17 1.18 V P Typical values are measured at 25°C. Characterized, not tested As the supply voltage rises, the LVD circuit will hold the MCU in reset until the supply has risen above VLVDL. Total Leakage current is the sum value for all GPIO pins; this leakage current is not distributed evenly across all pins but characterization data shows that individual pin leakage current maximums are less than 250 nA. Measured with VIn = VDD. All functional non-supply pins are internally clamped to VSS and VDD. Input must be current limited to the value specified. To determine the value of the required current-limiting resistor, calculate resistance values for positive and negative clamp voltages, then use the larger of the two values. 18 Freescale Semiconductor Preliminary — Subject to Change Preliminary Electrical Characteristics 7 Power supply must maintain regulation within operating VDD range during instantaneous and operating maximum current conditions. If positive injection current (VIn > VDD) is greater than IDD, the injection current may flow out of VDD and could result in external power supply going out of regulation. Ensure external VDD load will shunt current greater than maximum injection current. This will be the greatest risk when the MCU is not consuming power. Examples are: if no system clock is present, or if clock rate is very low (which would reduce overall power consumption). 8 Maximum is highest voltage that POR is guaranteed. 9 Run at 1 MHz bus frequency 10 Low voltage detection and warning limits measured at 1 MHz bus frequency. 11 Factory trimmed at VDD = 3.0 V, Temp = 25°C Freescale Semiconductor 19 Preliminary — Subject to Change Preliminary Electrical Characteristics 2.6 Supply Current Characteristics Table 10. Supply Current Characteristics # Symbol RIDD 1 Parameter Run supply current Bus Freq VDD (V) 24 MHz 20 MHz 8 MHz 1 MHz RIDD Run supply current 4 RIDD Run supply current Temp (°C) C 3 20 24 mA –40 to 25 P 3 20 TBD mA 105 P 3 18 — mA –40 to 105 T 3 8 — mA –40 to 105 T 3 1.8 — mA –40 to 105 T 24 MHz 3 12.3 TBD mA –40 to 105 C 20 MHz 3 10.5 — mA –40 to 105 T 4.8 — mA –40 to 105 T 1.3 — mA –40 to 105 T TBD — μA –40 to 105 T TBD — μA –40 to 105 T TBD — μA 0 to 70 T TBD — μA –40 to 105 T 1 MHz RIDD Unit FEI mode; All modules OFF 8 MHz 3 Max FEI mode All modules ON 24 MHz 2 Typ1 3 3 LPS=0; All modules OFF 16 kHz FBILP 3 16 kHz FBELP 3 Run supply LPS=1, all modules OFF current 16 kHz FBELP 3 16 kHz FBELP 3 20 Freescale Semiconductor Preliminary — Subject to Change Preliminary Electrical Characteristics Table 10. Supply Current Characteristics (Continued) # Symbol 5 WIDD Parameter Bus Freq 20 MHz 8 MHz 1 MHz S2IDD Temp (°C) C 3 TBD 6 mA –40 to 105 C 3 TBD — mA –40 to 105 T 3 TBD — mA –40 to 105 T 3 TBD — mA –40 to 105 T 3 0.39 0.6 µA –40 to 25 P 3 TBD TBD µA 70 C N/A 3 7 TBD µA 85 C N/A 3 16 TBD µA 105 P TBD TBD µA –40 to 25 C 2 N/A 2 TBD TBD µA 70 C N/A 2 TBD TBD µA 85 C N/A 2 TBD TBD µA 105 C 0.55 0.9 µA –40 to 25 P Stop3 mode No clocks active supply current N/A 3 N/A 3 TBD TBD µA 70 C N/A 3 14 TBD µA 85 C N/A 3 37 TBD µA 105 P 2 TBD TBD µA –40 to 25 C N/A 2 TBD TBD µA 70 C N/A 2 14 TBD µA 85 C N/A 2 TBD TBD µA 105 C N/A 1 Unit N/A N/A S3IDD Max Stop2 mode supply current N/A 7 Typ1 Wait mode FEI mode, all modules OFF supply current 24 MHz 6 VDD (V) Data in Typical column was characterized at 3.0 V, 25°C or is typical recommended value. Freescale Semiconductor 21 Preliminary — Subject to Change Preliminary Electrical Characteristics Table 11. Typical Stop Mode Adders Temperature (°C) # 1 2 3 4 5 6 Parameter LPO EREFSTEN 1 RANGE = HGO = 0 IREFSTEN1 Units C 250 nA D 850 (TBD) 1000 (TBD) nA D 77 86 120 µA T -40 25 70 85 105 50 75 100 150 600 (TBD) 650 (TBD) 750 (TBD) 68 70 — — TOD Does not include clock source current 50 75 100 150 250 nA D LVD1 LVDSE = 1 114 115 123 135 170 µA T ACMP1 Not using the bandgap (BGBE = 0) 18 20 23 33 65 µA T ADC1 ADLPC = ADLSMP = 1 Not using the bandgap (BGBE = 0) 75 85 100 115 165 µA T DAC1 High power mode; no load on DACO 500 500 500 500 500 µA T 7 8 Condition Not available in stop2 mode. 2.7 PRACMP Electricals Table 12. PRACMP Electrical Specifications # Characteristic Symbol Min Typical Max Unit C VPWR 1.8 — 3.6 V P 1 Supply voltage 2 Supply current (active) (PRG enabled) IDDACT1 — — 60 μA C 3 Supply current (active) (PRG disabled) IDDACT2 — — 40 μA C 4 Supply current (ACMP and PRG all disabled) IDDDIS — — 2 nA D 5 Analog input voltage VAIN VSS – 0.3 — VDD V — 6 Analog input offset voltage VAIO — 5 40 mV T 7 Analog comparator hysteresis VH 3.0 — 20.0 mV T 8 Analog input leakage current IALKG — — 1 nA D 9 Analog comparator initialization delay tAINIT — — 1.0 μs T 22 Freescale Semiconductor Preliminary — Subject to Change Preliminary Electrical Characteristics Table 12. PRACMP Electrical Specifications # Characteristic Symbol Min Typical Max Unit C 10 Programmable reference generator inputs VIn2(VDD25) 1.8 — 2.75 V — 11 Programmable reference generator setup delay tPRGST — 1 — µs D 12 Programmable reference generator step size Vstep –0.25 1 0.25 LSB D 13 Programmable reference generator voltage range Vprgout VIn/32 — Vin V P 2.8 12-bit DAC Electricals Table 13. DAC 12LV Operating Requirements # Characteristic Symbol Min Max Unit C 1 Supply voltage VDDA 1.8 3.6 V P 2 Reference voltage VDACR 1.15 3.6 V C 3 Temperature TA –40 105 °C C Output load capacitance CL — 100 pF C — 1 mA C 4 5 Output load current IL Freescale Semiconductor Notes A small load capacitance (47 pF) can improve the bandwidth performance of the DAC. 23 Preliminary — Subject to Change Preliminary Electrical Characteristics Table 14. DAC 12-Bit Operating Behaviors # Characteristic 1 Resolution 2 Symbol Min Max Unit C N 12 12 Supply current low-power mode IDDA_DACLP 50 100 3 Supply current high-power mode IDDA_DACHP 120 500 (TBD) µA C TsFSLP 4 Full-scale Settling time (±0.5 LSB) (0x080 to 0xF7F or 0xF7F to 0x080) low-power mode — 200 (TBD) µs C TsFSHP 5 Full-scale Settling time (±0.5 LSB) (0x080 to 0xF7F or 0xF7F to 0x080) high-power mode — 30 µs C TsC-CLP 6 Code-to-code Settling time (±0.5 LSB) (0xBF8 to 0xC08 or 0xC08 to 0xBF8) low-power mode — 5 µs C TsC-CHP 7 Code-to-code Settling time (±0.5 LSB) (0xBF8 to 0xC08 or 0xC08 to 0xBF8) high-power mode — 1(TBD) µs C DAC output voltage range low (high-power mode, no load, DAC set to 0) Vdacoutl 8 — 100 (TBD) mV C DAC output voltage range high (high-power mode, no load, DAC set to 0x0FFF) Vdacouth 9 VDACR100 — mV C 10 Integral non-linearity error INL — ±8 LSB C 11 Differential non-linearity error VDACR is > 2.4 V DNL — ±1 LSB C 12 Offset error EO — ± 0.5 %FSR C 13 Gain error EG — ± 0.5 (TBD) %FSR C 14 Power supply rejection ratio VDD ≥ 2.4 V 60 — dB C — 2 (TBD) mV C — TBD µV/yr C PSRR Temperature drift of offset voltage (DAC set to 0x0800) Tco 15 16 Offset aging coefficient Ac bit µA Notes C C See Typical Drift figure that follows. Figure 5. Offset at Half Scale vs Temperature 24 Freescale Semiconductor Preliminary — Subject to Change Preliminary Electrical Characteristics 2.9 ADC Characteristics Table 15. 12-bit ADC Operating Conditions Max Unit C 1.8 — 3.6 V D -100 0 +100 mV D -100 0 +100 mV D VDDAD VDDAD V D VSSAD VSSAD V D V D pF C kΩ C 1 VDDAD Supply voltage Absolute 2 ΔVDDAD Delta to VDD (VDD-VDDAD)2 3 ΔVSSAD Ground voltage 4 VREFH Ref Voltage High 1.13 5 VREFL Ref Voltage Low VSSAD 6 VADIN VREFL — VREFH 7 CADIN Input Capacitance — 4 5 8 RADIN Input Resistance — 2 5 9 fADCK 10 Conditions Typ1 Symb RAS Characteristic Min # Delta to VSS (VSS-VSSAD)2 Input Voltage Analog Source Resistance ADC Conversion Clock Freq. Comment External to MCU Assumes ADLSMP=0 12-bit mode fADCK > 4 MHz — — 2 fADCK < 4 MHz — — 5 11/10-bit mode fADCK > 8 MHz — — 2 4 MHz < fADCK < 8 MHz — — 5 fADCK < 4 MHz — — 10 9/8-bit mode fADCK > 4 MHz — — 5 fADCK < 4 MHz — — 10 High Speed (ADLPC=0, ADHSC=1) 1.0 — 8.0 High Speed (ADLPC=0, ADHSC=0) 1.0 Low Power (ADLPC=1, ADHSC=1) 1.0 — — kΩ C kΩ C kΩ C kΩ C kΩ C kΩ C kΩ C MHz D MHz D MHz D 5.0 2.5 Typical values assume VDDAD = 3.0 V, Temp = 25 °C, fADCK=1.0 MHz unless otherwise stated. Typical values are for reference only and are not tested in production. 2 DC potential difference. 1 Freescale Semiconductor 25 Preliminary — Subject to Change Preliminary Electrical Characteristics SIMPLIFIED INPUT PIN EQUIVALENT ZADIN CIRCUIT Pad leakage due to input protection ZAS RAS SIMPLIFIED CHANNEL SELECT CIRCUIT RADIN ADC SAR ENGINE + VADIN VAS + – CAS – RADIN INPUT PIN INPUT PIN RADIN RADIN INPUT PIN CADIN Figure 6. ADC Input Impedance Equivalency Diagram 26 Freescale Semiconductor Preliminary — Subject to Change Preliminary Electrical Characteristics Table 16. 12-bit SAR ADC Characteristics full operating range (VREFH = VDDAD, > 1.8, VREFL = VSSAD ≤ 8 MHz) Characterist ic Supply Current Conditions1 Min Typ2 Max — 215 — — 470 — — 610 — — 0.01 — — 2.4 — — 5.2 — — 6.2 — — ±1.75 ±3.5 11-bit differential mode 10-bit single-ended mode — — ±0.7 ±0.8 ±1.5 ±1.5 T 9-bit differential mode 8-bit single-ended mode — — ±0.5 ±0.5 ±1.0 ±1.0 T — ±0.7 ±1 11-bit differential mode 10-bit single-ended mode — — ±0.5 ±0.5 ±0.75 ±0.75 T 9-bit differential mode 8-bit single-ended mode — — ±0.2 ±0.2 ±0.5 ±0.5 T — ±1.0 ±2.5 11-bit differential mode 10-bit single-ended mode — — ±0.5 ±0.5 ±1.0 ±1.0 T 9-bit differential mode 8-bit single-ended mode — — ±0.3 ±0.3 ±0.5 ±0.5 T Symb ADLPC=1, ADHSC=0 ADLPC=0, ADHSC=0 IDDAD ADLPC=0, ADHSC=1 Supply Current Stop, Reset, Module Off ADC Asynchronou s Clock Source ADLPC=1, ADHSC=0 ADLPC=0, ADHSC=0 Sample Time See Block Guide for sample times Conversion Time See Block Guide for conversion times Total Unadjusted Error 12-bit single-ended mode Differential Non-Linearity Integral Non-Linearity IDDAD fADACK ADLPC=0, ADHSC=1 12-bit single-ended mode 12-bit single-ended mode TUE DNL INL Freescale Semiconductor Unit C Comment μA T ADLSMP=0 ADCO=1 μA C MHz P tADACK = 1/fADACK LSB3 T 32x Hardware Averaging (AVGE = %1 AVGS = %11) LSB2 LSB2 T T 27 Preliminary — Subject to Change Preliminary Electrical Characteristics Table 16. 12-bit SAR ADC Characteristics full operating range (VREFH = VDDAD, > 1.8, VREFL = VSSAD ≤ 8 MHz) (Continued) Characterist ic Zero-Scale Error Full-Scale Error Conditions1 Symb Min Typ2 Max Unit C Comment EZS — ±0.7 ±2.0 LSB2 T VADIN = VSSAD 11-bit differential mode 10-bit single-ended mode — — ±0.4 ±0.4 ±1.0 ±1.0 T 9-bit differential mode 8-bit single-ended mode — — ±0.2 ±0.2 ±0.5 ±0.5 T — ±1.0 ±3.5 11-bit differential mode 10-bit single-ended mode — — ±0.4 ±0.4 ±1.5 ±1.5 T 9-bit differential mode 8-bit single-ended mode — — ±0.2 ±0.2 ±0.5 ±0.5 T — — ±0.5 12-bit single-ended mode 12-bit single-ended mode EFS Quantization Error All modes EQ Input Leakage Error all modes EIL Temp Sensor Slope m — 1.646 — — 1.769 — — 701.2 — –40°C – 25°C 25°C – 125°C Temp Sensor Voltage IIn * RAS 25°C VTEMP2 LSB2 T LSB2 D mV D mV/× C C mV C VADIN = VDDAD IIn = leakage current (refer to DC characteristi cs) 5 1 All accuracy numbers assume the ADC is calibrated with VREFH=VDDAD Typical values assume VDDAD = 3.0V, Temp = 25°C, fADCK=2.0MHz unless otherwise stated. Typical values are for reference only and are not tested in production. 3 1 LSB = (V N REFH - VREFL)/2 2 28 Freescale Semiconductor Preliminary — Subject to Change Preliminary Electrical Characteristics 2.10 MCG and External Oscillator (XOSC) Characteristics Table 17. MCG (Temperature Range = –40 to 105°C Ambient) # Rating 1 Internal reference startup time factory trimmed at VDD=3.0 V and 2 Average internal reference frequency temp=25°C Symbol Min Typical Max Unit C tirefst — 55 100 μs D — 31.25 — 31.25 — 39.0625 16 — 20 32 — 40 40 — 60 — ± 0.1 ± 0.2 — ± 0.2 ± 0.4 — ±1.0 ±2 — ± 0.5 ±1 tfll_acquire — — 1 tpll_acquire — — 1 CJitter — 0.02 0.2 %fdco C fvco 7.0 — 55.0 MHz D fpll_ref 1.0 — 2.0 MHz D fpll_jitter_625 — 0.5664 — %fpll Dlock ± 1.49 — ± 2.98 Dunl ± 4.47 — ± 5.97 tfll_lock — — tfll_acquire+ 1075(1/fint_t) tpll_lock — — C fint_ft user trimmed output frequency range 3 DCO trimmed Low range (DRS=00) Mid range (DRS=01) fdco_t High range1 (DRS=10) Resolution of trimmed DCO output fre- with FTRIM 4 quency at fixed voltage and temperature without FTRIM over voltage and temperature Total deviation of trimmed DCO output 5 frequency over voltage and tempera- over fixed voltage ture and temp range of 0 - 70 °C 6 Acquisition time FLL2 3 PLL term Jitter of DCO output clock (averaged over 2mS 7 Long interval) 4 8 VCO operating frequency 9 PLL reference frequency range of PLL output clock measured 10 Jitter over 625ns 5 Long term Exit7 FLL 12 Lock time C C MHz Δfdco_t ns Entry6 11 Lock frequency tolerance Δfdco_res_t kHz C %fdco tpll_acquire+ 1075(1/fpll_re C C p %fdco PLL C C C ms D D D % D D s D f) 13 14 1 2 Loss of external clock minimum frequency - RANGE = 0 Loss of external clock minimum frequency - RANGE = 1 floc_low (3/5) x fint_t — — kHz floc_high (16/5) x fint_t — — kHz D D This should not exceed the maximum CPU frequency for this device. This specification applies to any time the FLL reference source or reference divider is changed, trim value is changed, DMX32 bit is changed, DRS bit is changed, or changing from FLL disabled (BLPE, BLPI) to FLL enabled (FEI, FEE, FBE, FBI). If a crystal/resonator is being used as the reference, this specification assumes it is already running. Freescale Semiconductor 29 Preliminary — Subject to Change Preliminary Electrical Characteristics 3 This specification applies to any time the PLL VCO divider or reference divider is changed, or changing from PLL disabled (BLPE, BLPI) to PLL enabled (PBE, PEE). If a crystal/resonator is being used as the reference, this specification assumes it is already running. 4 Jitter is the average deviation from the programmed frequency measured over the specified interval at maximum fBUS. Measurements are made with the device powered by filtered supplies and clocked by a stable external clock signal. Noise injected into the FLL circuitry via VDD and VSS and variation in crystal oscillator frequency increase the CJitter percentage for a given interval. 5 625 ns represents 5 time quanta for CAN applications, under worst-case conditions of 8 MHz CAN bus clock, 1 Mbps CAN Bus speed, and 8 time quanta per bit for bit time settings. 5 time quanta is the minimum time between a synchronization edge and the sample point of a bit using 8 time quanta per bit. 6 Below Dlock minimum, the MCG is guaranteed to enter lock. Above Dlock maximum, the MCG will not enter lock. But if the MCG is already in lock, then the MCG may stay in lock. 7 Below Dunl minimum, the MCG will not exit lock if already in lock. Above Dunl maximum, the MCG is guaranteed to exit lock. Table 18. XOSC (Temperature Range = –40 to 105°C Ambient) # Oscillator crystal or resonator (EREFS = 1, ERCLKEN = 1) 1 2 Symbol Min Typ1 Max Unit flo 32 — 38.4 kHz • High range (RANGE = 1), • FEE or FBE mode 2 fhi 1 — 5 MHz • High range (RANGE = 1), • High gain (HGO = 1), • FBELP mode fhi 1 — 16 MHz • High range (RANGE = 1), • Low power (HGO = 0), • FBELP mode fhi 1 — 8 MHz Characteristic • Low range (RANGE = 0) Load capacitors Feedback resistor See Note 3 C1 C2 Low range (32 kHz to 38.4 kHz) RF — — High range (1 MHz to 16 MHz) — — 1 — Low Gain (HGO = 0) RS — 0 — — 100 — — 0 0 4 MHz — 0 10 1 MHz — 0 20 10 3 MΩ Series resistor — Low range 4 High Gain (HGO = 1) Series resistor — High range kΩ • Low Gain (HGO = 0) • High Gain (HGO = 1) 5 ≥ 8 MHz RS 30 kΩ Freescale Semiconductor Preliminary — Subject to Change Preliminary Electrical Characteristics Table 18. XOSC (Temperature Range = –40 to 105°C Ambient) # Characteristic Crystal start-up time 4, 5 Low range, low gain (RANGE = 0, HGO = 0) Symbol Min Typ1 — t — — 400 — — 5 — — 15 — 6 High range, low gain (RANGE = 1, HGO = 0) tCSTH High range, high gain (RANGE = 1, HGO = 1) Unit 200 CSTL Low range, high gain (RANGE = 0, HGO = 1) Max ms 1 Data in Typical column was characterized at 3.0 V, 25°C or is typical recommended value. When MCG is configured for FEE or FBE mode, input clock source must be divisible using RDIV to within the range of 31.25 kHz to 39.0625 kHz. 3 See crystal or resonator manufacturer’s recommendation. 4 This parameter is characterized and not tested on each device. 5 Proper PC board layout procedures must be followed to achieve specifications. 2 o Freescale Semiconductor 31 Preliminary — Subject to Change Preliminary Electrical Characteristics 2.11 AC Characteristics This section describes ac timing characteristics for each peripheral system. 2.11.1 Control Timing Table 19. Control Timing # Symbol 1 fBus Parameter Min Typical1 Max C Bus frequency (tcyc = 1/fBus) Unit MHz VDD ≥ 1.8 V dc — 10 D VDD > 2.1 V dc — 20 D VDD > 2.4 V dc — D 24 2 tLPO Internal low-power oscillator period 800 990 (TBD) 1500 D μs 3 textrst External reset pulse width2 (tcyc = 1/fSelf_reset) 100 — — D ns 4 trstdrv Reset low drive 66 x tcyc — — D ns 5 tMSSU Active background debug mode latch setup time 500 — — D ns 6 tMSH Active background debug mode latch hold time 100 — — D ns 7 tILIH, tIHIL IRQ pulse width • Asynchronous path2 • Synchronous path3 100 1.5 x tcyc — — 8 tILIH, tIHIL KBIPx pulse width • Asynchronous path2 • Synchronous path3 100 1.5 x tcyc — — D ns D 32 ns Freescale Semiconductor Preliminary — Subject to Change Preliminary Electrical Characteristics Table 19. Control Timing # Symbol 9 tRise, tFall Parameter Min Typical1 Max C Port rise and fall time (load = 50 pF)4, Low Drive Unit ns Slew rate control disabled (PTxSE = 0) — 11 — D Slew rate control enabled (PTxSE = 1) — 35 — D Slew rate control disabled (PTxSE = 0) — 40 — D Slew rate control enabled (PTxSE = 1) — 75 — D Typical values are based on characterization data at VDD = 5.0 V, 25 °C unless otherwise stated. This is the shortest pulse that is guaranteed to be recognized as a reset pin request. Shorter pulses are not guaranteed to override reset requests from internal sources. 3 This is the minimum pulse width that is guaranteed to pass through the pin synchronization circuitry. Shorter pulses may or may not be recognized. In stop mode, the synchronizer is bypassed so shorter pulses can be recognized in that case. 4 Timing is shown with respect to 20% V DD and 80% VDD levels. Temperature range –40 °C to 105 °C. 1 2 textrst RESET PIN Figure 7. Reset Timing tIHIL IRQ/KBIPx IRQ/KBIPx tILIH Figure 8. IRQ/KBIPx Timing Freescale Semiconductor 33 Preliminary — Subject to Change Preliminary Electrical Characteristics 2.11.2 TPM Timing Synchronizer circuits determine the shortest input pulses that can be recognized or the fastest clock that can be used as the optional external source to the timer counter. These synchronizers operate from the current bus rate clock. Table 20. TPM Input Timing # C Function Symbol Min Max Unit 1 — External clock frequency fTPMext dc fBus/4 MHz 2 — External clock period tTPMext 4 — tcyc 3 D External clock high time tclkh 1.5 — tcyc 4 D External clock low time tclkl 1.5 — tcyc 5 D Input capture pulse width tICPW 1.5 — tcyc tTPMext tclkh TPMxCLK tclkl Figure 9. Timer External Clock tICPW TPMxCHn TPMxCHn tICPW Figure 10. Timer Input Capture Pulse 34 Freescale Semiconductor Preliminary — Subject to Change Preliminary Electrical Characteristics 2.12 SPI Characteristics Table 21 and Figure 11 through Figure 14 describe the timing requirements for the SPI system. Table 21. SPI Timing No.1 Characteristic2 Symbol Operating frequency Unit C fBus/2048 0 fBus/2 fBus/4 Hz Hz D 2 4 2048 — tcyc tcyc D 1/2 1 — — tSPSCK tcyc D 1/2 1 — — tSPSCK tcyc D tcyc – 30 tcyc – 30 1024 tcyc — ns ns D 15 15 — — ns ns D 0 25 — — ns ns D ta — 1 tcyc D tdis — 1 tcyc D — — 25 25 ns ns D 0 0 — — ns ns D Master Slave SPSCK period tSPSCK 2 Master Slave Enable lead time tLead 3 Master Slave Enable lag time tLag 4 Master Slave Clock (SPSCK) high or low time 5 tWSPSCK Master Slave Data setup time (inputs) 6 Master Slave Data hold time (inputs) 7 9 Max fop 1 8 Min Master Slave Slave access time3 Slave MISO disable time 4 Data valid (after SPSCK edge) 10 tSU tSU tHI tHI tv Master Slave Data hold time (outputs) 11 tHO Master Slave Rise time 12 Input Output tRI tRO — — tcyc – 25 25 ns ns D Input Output tFI tFO — — tcyc – 25 25 ns ns D Fall time 13 1 Numbers in this column identify elements in Figure 11 through Figure 14. All timing is shown with respect to 20% VDD and 70% VDD, unless noted; 100 pF load on all SPI pins. All timing assumes slew rate control disabled and high drive strength enabled for SPI output pins. 3 Time to data active from high-impedance state. 4 Hold time to high-impedance state. 2 Freescale Semiconductor 35 Preliminary — Subject to Change Preliminary Electrical Characteristics SS1 (OUTPUT) 2 2 SCK (CPOL = 0) (OUTPUT) 3 5 4 SCK (CPOL = 1) (OUTPUT) 5 4 6 MISO (INPUT) 7 MSB IN2 BIT 6 . . . 1 11 MOSI (OUTPUT) LSB IN 11 MSB OUT2 12 BIT 6 . . . 1 LSB OUT NOTES: 1. SS output mode (MODFEN = 1, SSOE = 1). 2. LSBF = 0. For LSBF = 1, bit order is LSB, bit 1, ..., bit 6, MSB. Figure 11. SPI Master Timing (CPHA = 0) SS(1) (OUTPUT) 2 2 SCK (CPOL = 0) (OUTPUT) 3 5 4 SCK (CPOL = 1) (OUTPUT) 5 4 6 MISO (INPUT) 7 MSB IN(2) 11 MOSI (OUTPUT) BIT 6 . . . 1 LSB IN 12 MSB OUT(2) BIT 6 . . . 1 LSB OUT NOTES: 1. SS output mode (MODFEN = 1, SSOE = 1). 2. LSBF = 0. For LSBF = 1, bit order is LSB, bit 1, ..., bit 6, MSB. Figure 12. SPI Master Timing (CPHA = 1) 36 Freescale Semiconductor Preliminary — Subject to Change Preliminary Electrical Characteristics SS (INPUT) 3 2 SCK (CPOL = 0) (INPUT) 5 4 2 SCK (CPOL = 1) (INPUT) 5 4 8 MISO (OUTPUT) 12 11 BIT 6 . . . 1 MSB OUT SLAVE SLAVE LSB OUT SEE NOTE 7 6 MOSI (INPUT) 9 BIT 6 . . . 1 MSB IN LSB IN NOTE: 1. Not defined, but normally MSB of character just received Figure 13. SPI Slave Timing (CPHA = 0) SS (INPUT) 2 3 2 SCK (CPOL = 0) (INPUT) 5 4 SCK (CPOL = 1) (INPUT) 5 4 11 MISO (OUTPUT) SEE NOTE 8 MOSI (INPUT) SLAVE 12 MSB OUT 6 BIT 6 . . . 1 9 SLAVE LSB OUT 7 MSB IN BIT 6 . . . 1 LSB IN NOTE: 1. Not defined, but normally LSB of character just received Figure 14. SPI Slave Timing (CPHA = 1) Freescale Semiconductor 37 Preliminary — Subject to Change Preliminary Electrical Characteristics 2.13 Flash Specifications This section provides details about program/erase times and program-erase endurance for the Flash memory. Program and erase operations do not require any special power sources other than the normal VDD supply. For more detailed information about program/erase operations, see the Memory chapter in the Reference Manual for this device (MC9S08JE128RM). Table 22. Flash Characteristics # Characteristic Symbol Min Typical Max Unit 3.6 V C 1 Supply voltage for program/erase -40°C to 105°C Vprog/erase 1.8 2 Supply voltage for read operation VRead 1.8 — 3.6 V D 3 Internal FCLK frequency1 fFCLK 150 — 200 kHz D 4 Internal FCLK period (1/FCLK) tFcyc 5 — 6.67 μs D 5 Byte program time (random location) 2 2 — D tprog 9 tFcyc P tBurst 4 tFcyc P 6 Byte program time (burst mode) 7 Page erase time2 tPage 4000 tFcyc P 8 2 tMass 20,000 tFcyc P Mass erase time endurance3 9 Program/erase TL to TH = –40°C to + 105°C T = 25°C 10 Data retention4 tD_ret 10,000 — — 100,000 — — cycles C 15 100 — years C 1 The frequency of this clock is controlled by a software setting. These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for calculating approximate time to program and erase. 3 Typical endurance for flash was evaluated for this product family on the HC9S12Dx64. For additional information on how Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile Memory. 4 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory. 2 38 Freescale Semiconductor Preliminary — Subject to Change Preliminary Electrical Characteristics 2.14 USB Electricals The USB electricals for the USB On-the-Go module conform to the standards documented by the Universal Serial Bus Implementers Forum. For the most up-to-date standards, visit http://www.usb.org. If the Freescale USB On-the-Go implementation has electrical characteristics that deviate from the standard or require additional information, this space would be used to communicate that information. Table 23. Internal USB 3.3 V Voltage Regulator Characteristics # Characteristic Symbol Min Typ Max Unit C 1 Regulator operating voltage Vregin 3.9 — 5.5 V C 2 VREG output Vregout 3 3.3 3.6 V P 3 VUSB33 input with internal VREG disabled Vusb33in 3 3.3 3.6 V C 4 VREG Quiescent Current IVRQ — 0.5 — mA C Freescale Semiconductor 39 Preliminary — Subject to Change Preliminary Electrical Characteristics 2.15 VREF Electrical Specifications Table 24. VREF Electrical Specifications Num Symbol Min Max Unit C VDDA 1.80 3.6 V C 1 Supply voltage 2 Temperature TA –40 105 °C C 3 Output Load Capacitance CL — 100 nf D 4 Maximum Load — — 10 mA — 5 Voltage Reference Output with Factory Trim. VDD = 3 V. Vout 1.140 1.160 V P 6 Temperature Drift (Vmin - Vmax across the full temperature range) Tdrift — 10 (TBD) mV1 T 7 Aging Coefficient Ac — TBD ppm/year C 8 Powered down Current (Off Mode, VREFEN=0, VRSTEN=0) I — 0.10 µA C 9 Bandgap only (MODE_LV[1:0] = 00) I — 75 µA T 10 Low-Power buffer (MODE_LV[1:0] = 01) I — 125 µA T 11 Tight-Regulation buffer (MODE_LV[1:0] = 10) I — 1.1 mA T 12 Load Regulation MODE_LV = 10 — — 100 µV/mA C 13 Line Regulation (Power Supply Rejection) DC — TBD mV C AC TBD — dB 14 1 Characteristic See typical chart below. Table 25. VREF Limited Range Operating Requirements # Characteristic Symbol Min Max Unit C 1 Temperature TA 0 50 °C C Notes Table 26. VREF Limited Range Operating Behaviors # Characteristic Symbol Min Max Unit C 1 Voltage Reference Output with Factory Trim Vout TBD TBD µA C 40 Notes Freescale Semiconductor Preliminary — Subject to Change Ordering Information Figure 15. Typical Output vs. Temperature TBD Figure 16. Typical Output vs. VDD 3 Ordering Information This appendix contains ordering information for the device numbering system. MC9S08JE128 and MC9S08JE64 devices. Freescale Semiconductor 41 Preliminary — Subject to Change Ordering Information 3.1 Device Numbering System Example of the device numbering system: MC 9 S08 JE 128 V XX Status (MC = Fully Qualified) Package designator (see Table 28) Temperature range (V = –40°C to 105°C) (C = –40°C to 85°C) Memory (9 = Flash-based) Core Approximate Flash size in Kbytes Family Table 27. Device Numbering System Memory Device Number1 MC9S08JE128 MC9S08JE64 Available Packages2 Flash RAM 131,072 12,288 64 LQFP 131,072 12,288 80 LQFP 131,072 12,288 81 MAPBGA 65,536 12,288 64 LQFP 1 See Table 2 for a complete description of modules included on each device. 2 See Table 28 for package information. 3.2 Package Information Table 28. Package Descriptions Pin Count 64 3.3 Package Type Low Quad Flat Package 80 Low Quad Flat Package 81 MAPBGA Package Abbreviation Designator Case No. Document No. LQFP LH 840F-02 98ASS23234W 98ASS23174W 98ASA10670D LQFP LK 917-01 Map PBGA MB 1662-01 Mechanical Drawings Table 28 provides the available package types and their document numbers. The latest package outline/mechanical drawings are available on the MC9S08JE128 series Product Summary pages at http://www.freescale.com. To view the latest drawing, either: • Click on the appropriate link in Table 28, or • Open a browser to the Freescale® website (http://www.freescale.com), and enter the appropriate document number (from Table 28) in the “Enter Keyword” search box at the top of the page. 42 Freescale Semiconductor Preliminary — Subject to Change Revision History 4 Revision History To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most current. Your printed copy may be an earlier revision. To verify you have the latest information available, refer to: http://freescale.com/ The following revision history table summarizes changes contained in this document. Rev Date Description of Changes 0 6/2009 Initial release of the Data Sheet. 1 7/2009 Updated MCG and XOSC Average internal reference frequency. 2 04/2010 Updated electrical characteristic data. Freescale Semiconductor 43 Preliminary — Subject to Change How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1-800-521-6274 or +1-480-768-2130 support@freescale.com Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. 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Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1-8-1, Shimo-Meguro, Meguro-ku, Tokyo 153-0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 support.asia@freescale.com Freescale™ and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009-2010. All rights reserved. For Literature Requests Only: Freescale Semiconductor Literature Distribution Center http://compass.freescale.net/go/168063291 1-800-441-2447 or 1-303-675-2140 Fax: 1-303-675-2150 LDCForFreescaleSemiconductor@hibbertgroup.com Document Number: MC9S08JE128 Rev. 3 04/2010 Preliminary — Subject to Change
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