NXP Semiconductors
Data Sheet: Technical Data
MC9S08PA16 Series Data
Sheet
Supports: MC9S08PA16(A) and
MC9S08PA8(A)
Key features
• 8-Bit S08 central processor unit (CPU)
– Up to 20 MHz bus at 2.7 V to 5.5 V across operating
temperature range of -40 °C to 105 °C for V part and
-40 °C to 125 °C for M part.
– Supporting up to 40 interrupt/reset sources
– Supporting up to four-level nested interrupt
– On-chip memory
– Up to 16 KB flash read/program/erase over full
operating voltage and temperature
– Up to 256 byte EEPROM; 2-byte erase sector;
program and erase while executing flash
– Up to 2048 byte random-access memory (RAM)
– Flash and RAM access protection
• Power-saving modes
– One low-power stop mode; reduced power wait
mode
– Peripheral clock enable register can disable clocks to
unused modules, reducing currents; allows clocks to
remain enabled to specific peripherals in stop3 mode
• Clocks
– Oscillator (XOSC) - loop-controlled Pierce
oscillator; crystal or ceramic resonator range of
31.25 kHz to 39.0625 kHz or 4 MHz to 20 MHz
– Internal clock source (ICS) - containing a frequencylocked-loop (FLL) controlled by internal or external
reference; precision trimming of internal reference
allowing 1% deviation across temperature range of 0
°C to 70 °C and 2% deviation across the whole
operating temperature; up to 20 MHz
• System protection
– Watchdog with independent clock source
– Low-voltage detection with reset or interrupt;
selectable trip points
– Illegal opcode detection with reset
– Illegal address detection with reset
Document Number MC9S08PA16
Rev. 4, 03/2020
MC9S08PA16
MC9S08PA16A and MC9S08PA8A
are recommended for new design
• Development support
– Single-wire background debug interface
– Breakpoint capability to allow three breakpoints
setting during in-circuit debugging
– On-chip in-circuit emulator (ICE) debug module
containing two comparators and nine trigger modes
• Peripherals
– ACMP - one analog comparator with both positive
and negative inputs; separately selectable interrupt
on rising and falling comparator output; filtering
– ADC - 12-channel, 12-bit resolution; 2.5 µs
conversion time; data buffers with optional
watermark; automatic compare function; internal
bandgap reference channel; operation in stop mode;
optional hardware trigger
– CRC - programmable cyclic redundancy check
module
– FTM - two flex timer modulators modules including
one 6-channel and one 2-channel ones; 16-bit
counter; each channel can be configured for input
capture, output compare, edge- or center-aligned
PWM mode
– IIC - One inter-integrated circuit module; up to 400
kbps; multi-master operation; programmable slave
address; supporting broadcast mode and 10-bit
addressing; supporting SMBUS and PMBUS
– MTIM - One modulo timer with 8-bit prescaler and
overflow interrupt
– RTC - 16-bit real timer counter (RTC)
– SCI - two serial communication interface (SCI/
UART) modules optional 13-bit break; full duplex
non-return to zero (NRZ); LIN extension support
– SPI - one 8-bit serial peripheral interface (SPI)
modules; full-duplex or single-wire bidirectional;
master or slave mode
NXP reserves the right to change the production detail specifications as may be
required to permit improvements in the design of its products.
• Input/Output
– Up to 37 GPIOs including one output-only pin
– One 8-bit keyboard interrupt module (KBI)
– Two true open-drain output pins
– Four, ultra-high current sink pins supporting 20 mA source/sink current
• Package options
– 44-pin LQFP
– 32-pin LQFP
– 20-pin SOIC; 20-pin TSSOP
– 16-pin TSSOP
MC9S08PA16 Series Data Sheet, Rev. 4, 03/2020
2
NXP Semiconductors
Table of Contents
1
MCU block diagram...........................................................................4
6.2.1
Control timing..............................................................17
2
Orderable part numbers......................................................................5
6.2.2
Debug trace timing specifications................................18
3
Part identification............................................................................... 6
6.2.3
FTM module timing.....................................................19
3.1 Description.................................................................................6
6.3 Thermal specifications...............................................................20
3.2 Format........................................................................................6
3.3 Fields..........................................................................................6
6.3.1
7
Thermal characteristics................................................ 20
Peripheral operating requirements and behaviors.............................. 21
3.4 Example..................................................................................... 6
7.1 External oscillator (XOSC) and ICS characteristics..................21
4
Parameter Classification.....................................................................7
7.2 NVM specifications................................................................... 22
5
Ratings................................................................................................7
7.3 Analog........................................................................................24
5.1 Thermal handling ratings...........................................................7
7.3.1
ADC characteristics..................................................... 24
5.2 Moisture handling ratings.......................................................... 7
7.3.2
Analog comparator (ACMP) electricals...................... 27
5.3 ESD handling ratings.................................................................8
7.4 Communication interfaces......................................................... 27
5.4 Voltage and current operating ratings........................................8
6
General............................................................................................... 9
7.4.1
8
6.1 Nonswitching electrical specifications...................................... 9
SPI switching specifications........................................ 27
Dimensions.........................................................................................30
8.1 Obtaining package dimensions.................................................. 30
6.1.1
DC characteristics........................................................ 9
9
Pinout................................................................................................. 31
6.1.2
Supply current characteristics...................................... 15
9.1 Signal multiplexing and pin assignments.................................. 31
6.1.3
EMC performance........................................................16
9.2 Device pin assignment...............................................................33
6.2 Switching specifications............................................................ 17
10 Revision history................................................................................. 35
MC9S08PA16 Series Data Sheet, Rev. 4, 03/2020
NXP Semiconductors
3
MCU block diagram
1 MCU block diagram
Port A
Port B
CPU
PTB0/KBI0P4/RxD0/ADP4
PTB1/KBI0P5/TxD0/ADP5
PTB2/KBI0P6/SPSCK0/ADP6
PTB3/KBI0P7/MOSI0/ADP7
PTB4/FTM2CH4/MISO0 3
PTB5/FTM2CH5/SS0 3
PTB6/SDA/XTAL
PTB7/SCL/EXTAL
Port C
HCS08 CORE
PTA0/KBI0P0/FTM0CH0/ACMP0/ADP0
PTA1/KBI0P1/FTM0CH1/ACMP1/ADP1
PTA2/KBI0P2/RxD0/SDA1
PTA3/KBI0P3/TxD0/SCL1
PTA4/ACMPO/BKGD/MS 2
PTA5/IRQ/TCLK0/RESET
PTA6/FTM2FAULT1/ADP2
PTA7/FTM2FAULT2/ADP3
PTC0/FTM2CH0/ADP8
PTC1/FTM2CH1/ADP9
PTC2/FTM2CH2/ADP10
PTC3/FTM2CH3/ADP11
PTC4/FTM0CH0
PTC5/FTM0CH1
PTC6/RxD1
PTC7/TxD1
Port D
The block diagram below shows the structure of the MCUs.
PTD0/FTM2CH23
PTD1/FTM2CH33
PTD2
PTD3
PTD4
PTD5
PTD6
PTD7
BDC
SYSTEM INTEGRATION
MODULE (SIM)
WDG
IRQ
1 kHz OSC
LVD
KEYBOARD INTERRUPT
MODULE (KBI0)
INTER-INTEGRATED
CIRCUIT BUS (IIC)
8-BIT MODULO TIMER
INTERRUPT PRIORITY
(MTIM0)
CONTROLLER(IPC)
2-CH FLEX TIMER
ON-CHIP ICE AND
DEBUG MODUE (DBG)
MODULE (FTM0)
6-CH FLEX TIMER
MODULE (FTM2)
SERIAL COMMUNICATION
INTERFACE (SCI0)
USER EEPROM
MC9S08PA16 = 256 bytes
MC9S08PA8 = 256 bytes
USER RAM
MC9S08PA16 = 2,048 bytes
MC9S08PA8 = 2,048 bytes
20 MHz INTERNAL CLOCK
SOURCE (ICS)
EXTAL
XTAL
VDD
VSS
VDD4
VSS 4
VSS 4
VREFH
VDDA
VREFL
VSSA
EXTERNAL OSCILLATOR
SOURCE (XOSC)
SERIAL COMMUNICATION
INTERFACE (SCI1)
ANALOG COMPARATOR
(ACMP)
Port E
USER FLASH
MC9S08PA16 = 16,384 bytes
MC9S08PA8 = 8,192 bytes
REAL-TIME CLOCK
(RTC)
PTE0/SPSCK0
PTE1/MOSI0
PTE2/MISO0
PTE3/BUSOUT
PTE4/TCLK2
SERIAL PERIPHERAL
INTERFACE (SPI0)
POWER MANAGEMENT
CONTROLLER (PMC)
12-CH 12-BIT
ANALOG-TO-DIGITAL
CONVERTER(ADC)
CYCLIC REDUNDANCY
CHECK (CRC)
1. PTA2 and PTA3 operate as true-open drain when working as output.
2. PTA4/ACMPO/BKGD/MS is an output-only pin when used as port pin.
3. PTD0, PTD1, PTB4 and PTB5 can provide high sink/source current drive.
4. The secondary power pair of V DD and VSS (pin 11, 27 and 28 in 44-pin package) are not bonded in 32-pin, 20-pin or 16-pin packages.
Figure 1. MCU block diagram
MC9S08PA16 Series Data Sheet, Rev. 4, 03/2020
4
NXP Semiconductors
Orderable part numbers
2 Orderable part numbers
The following table summarizes the part numbers of the devices covered by this
document.
Table 1. Ordering information
Feature
MC9S08PA16(A)
Part
Number
VLD
VTJ
VTG
MTJ
MTG
Max.
frequency
(MHz)
20
20
20
20
20
20
20
20
20
20
Flash
memory
(KB)
16
16
16
16
16
8
8
8
8
8
RAM (KB)
2
2
2
2
2
2
2
2
2
2
EEPROM
(B)
256
256
256
256
256
256
256
256
256
256
12-bit
ADC
12ch
12ch
10ch
10ch
6ch
12ch
12ch
10ch
10ch
6ch
6ch+2ch
6ch+2ch
6ch+2ch
6ch+2ch
2ch+2ch
6ch+2ch
6ch+2ch
6ch+2ch
6ch+2ch
2ch+2ch
8-bit
Modulo
timer
1
1
1
1
1
1
1
1
1
1
ACMP
1
1
1
1
1
1
1
1
1
1
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
8-bit SPI
1
1
1
1
1
1
1
1
1
1
I2C
1
1
1
1
1
1
1
1
1
1
SCI (LIN
Capable)
2
2
1
1
1
2
2
1
1
1
Watchdog
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
CRC
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
4
4
2
2
2
4
4
2
2
2
16-bit
FlexTimer
RTC
20mA
high-drive
pins
VLC
VWJ
MC9S08PA8(A)
VLD
VLC
VWJ
VTJ
VTG
MTG
KBI pins
8
8
8
8
8
8
8
8
8
8
GPIO
37
28
18
18
14
37
28
18
18
14
44-LQFP
32-LQFP
20-SOIC
20TSSOP
16TSSOP
44-LQFP
32-LQFP
20-SOIC
20TSSOP
16TSSOP
Package
MC9S08PA16 Series Data Sheet, Rev. 4, 03/2020
NXP Semiconductors
5
Part identification
3 Part identification
3.1 Description
Part numbers for the chip have fields that identify the specific part. You can use the
values of these fields to determine the specific part you have received.
3.2 Format
Part numbers for this device have the following format:
MC 9 S08 PA AA (V) B CC
3.3 Fields
This table lists the possible values for each field in the part number (not all combinations
are valid):
Field
Description
Values
MC
Qualification status
• MC = fully qualified, general market flow
9
Memory
• 9 = flash based
S08
Core
• S08 = 8-bit CPU
PA
Device family
• PA
AA
Approximate flash size in KB
• 16 = 16 KB
• 8 = 8 KB
(V)
Mask set version
• (blank) = Any version
• A = Rev. 2 or later version, this is
recommended for new design
B
Operating temperature range (°C)
• M = –40 to 125
• V = –40 to 105
CC
Package designator
•
•
•
•
•
LD = 44-LQFP
LC = 32-LQFP
TJ = 20-TSSOP
WJ = 20-SOIC
TG = 16-TSSOP
3.4 Example
This is an example part number:
MC9S08PA16 Series Data Sheet, Rev. 4, 03/2020
6
NXP Semiconductors
Parameter Classification
MC9S08PA16AVLD
4 Parameter Classification
The electrical parameters shown in this supplement are guaranteed by various methods.
To give the customer a better understanding, the following classification is used and the
parameters are tagged accordingly in the tables where appropriate:
Table 2. Parameter Classifications
P
Those parameters are guaranteed during production testing on each individual device.
C
Those parameters are achieved by the design characterization by measuring a statistically relevant sample size
across process variations.
T
Those parameters are achieved by design characterization on a small sample size from typical devices under
typical conditions unless otherwise noted. All values shown in the typical column are within this category.
D
Those parameters are derived mainly from simulations.
NOTE
The classification is shown in the column labeled “C” in the
parameter tables where appropriate.
5 Ratings
5.1 Thermal handling ratings
Symbol
Description
Min.
Max.
Unit
Notes
TSTG
Storage temperature
–55
150
°C
1
TSDR
Solder temperature, lead-free
—
260
°C
2
1. Determined according to JEDEC Standard JESD22-A103, High Temperature Storage Life.
2. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic
Solid State Surface Mount Devices.
5.2 Moisture handling ratings
Symbol
MSL
Description
Moisture sensitivity level
Min.
Max.
Unit
Notes
—
3
—
1
1. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic
Solid State Surface Mount Devices.
MC9S08PA16 Series Data Sheet, Rev. 4, 03/2020
NXP Semiconductors
7
Ratings
5.3 ESD handling ratings
Symbol
Description
Min.
Max.
Unit
Notes
VHBM
Electrostatic discharge voltage, human body model
-6000
+6000
V
1
VCDM
Electrostatic discharge voltage, charged-device model
-500
+500
V
2
ILAT
Latch-up current at ambient temperature of 105 °C for
V part and 125 °C for M part
-100
+100
mA
1. Determined according to JEDEC Standard JESD22-A114, Electrostatic Discharge (ESD) Sensitivity Testing Human Body
Model (HBM).
2. Determined according to JEDEC Standard JESD22-C101, Field-Induced Charged-Device Model Test Method for
Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components.
5.4 Voltage and current operating ratings
Absolute maximum ratings are stress ratings only, and functional operation at the
maxima is not guaranteed. Stress beyond the limits specified in below table may affect
device reliability or cause permanent damage to the device. For functional operating
conditions, refer to the remaining tables in this document.
This device contains circuitry protecting against damage due to high static voltage or
electrical fields; however, it is advised that normal precautions be taken to avoid
application of any voltages higher than maximum-rated voltages to this high-impedance
circuit. Reliability of operation is enhanced if unused inputs are tied to an appropriate
logic voltage level (for instance, either VSS or VDD) or the programmable pullup resistor
associated with the pin is enabled.
Symbol
Description
Min.
Max.
Unit
VDD
Supply voltage
–0.3
6.0
V
IDD
Maximum current into VDD
—
120
mA
Digital input voltage (except RESET, EXTAL, XTAL, or true
open drain pin PTA2 and PTA3)
–0.3
VDD + 0.3
V
Digital input voltage (true open drain pin PTA2 and PTA3)
-0.3
6
V
Analog1, RESET, EXTAL, and XTAL input voltage
–0.3
VDD + 0.3
V
Instantaneous maximum current single pin limit (applies to all
port pins)
–25
25
mA
VDD – 0.3
VDD + 0.3
V
VDIO
VAIO
ID
VDDA
Analog supply voltage
1. All digital I/O pins, except open-drain pin PTA2 and PTA3, are internally clamped to VSS and VDD. PTA2 and PTA3 is only
clamped to VSS.
MC9S08PA16 Series Data Sheet, Rev. 4, 03/2020
8
NXP Semiconductors
General
6 General
6.1 Nonswitching electrical specifications
6.1.1 DC characteristics
This section includes information about power supply requirements and I/O pin
characteristics.
Table 3. DC characteristics
Symbol
C
—
—
VOH
C
Min
Typical1
Max
Unit
—
2.7
—
5.5
V
5 V, Iload =
-5 mA
VDD - 0.8
—
—
V
3 V, Iload =
-2.5 mA
VDD - 0.8
—
—
V
High current drive
pins, high-drive
strength2
5 V, Iload =
-20 mA
VDD - 0.8
—
—
V
3 V, Iload =
-10 mA
VDD - 0.8
—
—
V
Max total IOH for all
ports
5V
—
—
-100
mA
3V
—
—
-50
—
—
0.8
V
3 V, Iload =
2.5 mA
—
—
0.8
V
5 V, Iload
=20 mA
—
—
0.8
V
3 V, Iload =
10 mA
—
—
0.8
V
—
—
100
mA
Descriptions
Operating voltage
Output high
voltage
All I/O pins, standarddrive strength
C
C
C
IOHT
VOL
D
Output high
current
C
Output low
voltage
All I/O pins, standard- 5 V, Iload = 5
drive strength
mA
C
C
High current drive
pins, high-drive
strength2
C
IOLT
D
Output low
current
Max total IOL for all
ports
5V
3V
—
—
50
VIH
P
Input high
voltage
All digital inputs
VDD>4.5V
0.70 × VDD
—
—
VDD>2.7V
0.75 × VDD
—
—
Input low
voltage
All digital inputs
VDD>4.5V
—
—
0.30 × VDD
VDD>2.7V
—
—
0.35 × VDD
C
VIL
P
C
V
V
Vhys
C
Input
hysteresis
All digital inputs
—
0.06 × VDD
—
—
mV
|IIn|
P
Input leakage
current
All input only pins
(per pin)
VIN = VDD or
VSS
—
0.1
1
µA
Table continues on the next page...
MC9S08PA16 Series Data Sheet, Rev. 4, 03/2020
NXP Semiconductors
9
Nonswitching electrical specifications
Table 3. DC characteristics (continued)
Min
Typical1
Max
Unit
VIN = VDD or
VSS
—
0.1
1
µA
Total leakage All input only and I/O VIN = VDD or
combined for
VSS
all inputs and
Hi-Z pins
—
—
2
µA
—
30.0
—
50.0
kΩ
PTA2 and PTA3 pin
—
30.0
—
60.0
kΩ
Single pin limit
VIN < VSS,
VIN > VDD
-0.2
—
2
mA
-5
—
25
Symbol
C
Descriptions
|IOZ|
P
Hi-Z (offstate) leakage
current
|IOZTOT|
C
RPU
P
Pullup
resistors
All digital inputs,
when enabled (all I/O
pins other than PTA2
and PTA3)
RPU3
P
Pullup
resistors
IIC
D
DC injection
current4, 5, 6
All input/output (per
pin)
Total MCU limit,
includes sum of all
stressed pins
CIn
C
Input capacitance, all pins
—
—
—
7
pF
VRAM
C
RAM retention voltage
—
2.0
—
—
V
1. Typical values are measured at 25 °C. Characterized, not tested.
2. Only PTB4, PTB5, PTD0, PTD1 support ultra high current output.
3. The specified resistor value is the actual value internal to the device. The pullup value may appear higher when measured
externally on the pin.
4. All functional non-supply pins, except for , are internally clamped to VSS and VDD.
5. Input must be current-limited to the value specified. To determine the value of the required current-limiting resistor,
calculate resistance values for positive and negative clamp voltages, then use the large one.
6. Power supply must maintain regulation within operating VDD range during instantaneous and operating maximum current
conditions. If the positive injection current (VIn > VDD) is higher than IDD, the injection current may flow out of VDD and could
result in external power supply going out of regulation. Ensure that external VDD load will shunt current higher than
maximum injection current when the MCU is not consuming power, such as no system clock is present, or clock rate is
very low (which would reduce overall power consumption).
Table 4. LVD and POR Specification
Symbol
C
Description
Min
Typ
Max
Unit
VPOR
D
POR re-arm voltage1, 2
1.5
1.75
2.0
V
VLVDH
C
Falling low-voltage detect
threshold - high range (LVDV
= 1)3
4.2
4.3
4.4
V
VLVW1H
C
Level 1 falling
(LVWV = 00)
4.3
4.4
4.5
V
VLVW2H
C
Level 2 falling
(LVWV = 01)
4.5
4.5
4.6
V
VLVW3H
C
Level 3 falling
(LVWV = 10)
4.6
4.6
4.7
V
VLVW4H
C
Level 4 falling
(LVWV = 11)
4.7
4.7
4.8
V
Falling lowvoltage
warning
threshold high range
Table continues on the next page...
MC9S08PA16 Series Data Sheet, Rev. 4, 03/2020
10
NXP Semiconductors
Nonswitching electrical specifications
Table 4. LVD and POR Specification (continued)
1.
2.
3.
4.
Symbol
C
Description
Min
Typ
Max
Unit
VHYSH
C
High range low-voltage
detect/warning hysteresis
—
100
—
mV
VLVDL
C
Falling low-voltage detect
threshold - low range (LVDV =
0)
2.56
2.61
2.66
V
VLVDW1L
C
Level 1 falling
(LVWV = 00)
2.62
2.7
2.78
V
VLVDW2L
C
Level 2 falling
(LVWV = 01)
2.72
2.8
2.88
V
VLVDW3L
C
Level 3 falling
(LVWV = 10)
2.82
2.9
2.98
V
VLVDW4L
C
Level 4 falling
(LVWV = 11)
2.92
3.0
3.08
V
VHYSDL
C
Low range low-voltage detect
hysteresis
—
40
—
mV
VHYSWL
C
Low range low-voltage
warning hysteresis
—
80
—
mV
VBG
P
Buffered bandgap output 4
1.14
1.16
1.18
V
Falling lowvoltage
warning
threshold low range
Maximum is highest voltage that POR is guaranteed.
POR ramp time must be longer than 20us/V to get a stable startup.
Rising thresholds are falling threshold + hysteresis.
Voltage factory trimmed at VDD = 5.0 V, Temp = 25 °C
0.6
0.5
0.4
VDD-VOH(V)
125°C
105°C
0.3
25°C
0.2
-40°C
0.1
0
1
2
3
4
5
6
IOH(mA)
Figure 2. Typical IOH Vs. VDD-VOH (standard drive strength) (VDD = 5 V)
MC9S08PA16 Series Data Sheet, Rev. 4, 03/2020
NXP Semiconductors
11
Nonswitching electrical specifications
1
0.9
0.8
0.7
VDD-VOH(V)
0.6
125°C
0.5
105°C
0.4
25°C
0.3
-40°C
0.2
0.1
0
1
2
3
4
5
6
IOH(mA)
Figure 3. Typical IOH Vs. VDD-VOH (standard drive strength) (VDD = 3 V)
0.7
0.6
0.5
125°C
0.4
VDD-VOH(V)
105°C
0.3
25°C
0.2
-40°C
0.1
0
5
10
15
20
25
IOH(mA)
Figure 4. Typical IOH Vs. VDD-VOH (high drive strength) (VDD = 5 V)
MC9S08PA16 Series Data Sheet, Rev. 4, 03/2020
12
NXP Semiconductors
Nonswitching electrical specifications
1.2
1
0.8
VDD-VOH(V)
125°C
105°C
0.6
25°C
0.4
-40°C
0.2
0
0
5
10
15
20
25
30
IOH(mA)
Figure 5. Typical IOH Vs. VDD-VOH (high drive strength) (VDD = 3 V)
0.5
0.4
VOL(V)
125°C
0.3
105°C
25°C
0.2
-40°C
0.1
0.0
1
2
3
4
5
6
IOL(mA)
Figure 6. Typical IOL Vs. VOL (standard drive strength) (VDD = 5 V)
MC9S08PA16 Series Data Sheet, Rev. 4, 03/2020
NXP Semiconductors
13
Nonswitching electrical specifications
0.9
0.8
0.7
0.6
VOL(V)
125°C
0.5
105°C
0.4
25°C
0.3
-40°C
0.2
0.1
0
1
2
3
4
5
6
IOL(mA)
Figure 7. Typical IOL Vs. VOL (standard drive strength) (VDD = 3 V)
0.6
0.5
VOL(V)
0.4
125°C
0.3
105°C
25°C
0.2
-40°C
0.1
0
5
10
15
20
25
IOL(mA)
Figure 8. Typical IOL Vs. VOL (high drive strength) (VDD = 5 V)
MC9S08PA16 Series Data Sheet, Rev. 4, 03/2020
14
NXP Semiconductors
Nonswitching electrical specifications
1
0.9
0.8
0.7
VOL(V)
0.6
125°C
0.5
105°C
0.4
25°C
0.3
-40°C
0.2
0.1
0
5
10
15
20
25
IOL(mA)
Figure 9. Typical IOL Vs. VOL (high drive strength) (VDD = 3 V)
6.1.2 Supply current characteristics
This section includes information about power supply current in various operating
modes.The data in the following table was based on the operating temperature range
unless otherwise stated.
Table 5. Supply current characteristics
Num
C
Parameter
Symbol
Bus Freq
VDD (V)
Typical1
Max
Unit
1
C
Run supply current FEI mode,
all modules on; run from flash
RIDD
20 MHz
5
7.60
—
mA
10 MHz
4.65
—
1 MHz
1.90
—
7.05
—
C
2
C
20 MHz
C
10 MHz
4.40
—
1 MHz
1.85
—
C
C
3
Run supply current FEI mode,
all modules off & gated; run
from flash
RIDD
20 MHz
3
5.88
—
10 MHz
5
3.70
—
1 MHz
1.85
—
5.35
—
C
20 MHz
C
10 MHz
3.42
—
1 MHz
1.80
—
10.9
15.0
10 MHz
6.10
—
1 MHz
1.69
—
P
C
Run supply current FBE
mode, all modules on; run
from RAM
RIDD
20 MHz
3
5
mA
mA
Table continues on the next page...
MC9S08PA16 Series Data Sheet, Rev. 4, 03/2020
NXP Semiconductors
15
Nonswitching electrical specifications
Table 5. Supply current characteristics (continued)
Num
4
Bus Freq
VDD (V)
Typical1
Max
P
20 MHz
3
8.18
—
C
10 MHz
5.14
—
1 MHz
1.44
—
8.50
14.0
10 MHz
5.07
—
1 MHz
1.59
—
6.11
—
C
P
C
5
Parameter
Run supply current FBE
mode, all modules off &
gated; run from RAM
Symbol
RIDD
20 MHz
C
10 MHz
4.10
—
1 MHz
1.34
—
5.95
—
10 MHz
3.50
—
1 MHz
1.24
—
5.45
—
10 MHz
3.25
—
1 MHz
1.20
—
P
Wait mode current FEI mode,
all modules on
WIDD
C
7
5
P
C
6
20 MHz
C
20 MHz
20 MHz
Stop3 mode supply current
no clocks active (except 1kHz
LPO clock)2, 3
S3IDD
C
C
ADC adder to stop3
—
C
ADLPC = 1
3
5
3
—
5
1.35
—
—
3
1.3
—
—
5
40
—
3
39
—
5
128
—
3
124
—
Unit
mA
mA
µA
µA
ADLSMP = 1
ADCO = 1
MODE = 10B
ADICLK = 11B
8
C
LVD adder to stop34
C
1.
2.
3.
4.
—
—
µA
Data in Typical column was characterized at 5.0 V, 25 °C or is typical recommended value.
RTC adder cause
工商网监
湘ICP备2023018690号
