MC9S08PL8CLC

NXP Semiconductors Data Sheet: Technical Data MC9S08PL16 Series Data Sheet Document Number MC9S08PL16 Rev. 5, 06/2020 MC9S08PL16 Supports: MC9S08PL16 and MC9S08PL8 Key features • 8-Bit S08 central processor unit (CPU) – Up to 20 MHz bus at 2.7 V to 5.5 V across temperature range of -40 °C to 85 °C – Supporting up to 40 interrupt/reset sources – Supporting up to four-level nested interrupt – On-chip memory – Up to 16 KB flash read/program/erase over full operating voltage and temperature – Up to 256 byte EEPROM; 2-byte erase sector; program and erase while executing flash – Up to 2048 byte random-access memory (RAM) – Flash and RAM access protection • Power-saving modes – One low-power stop mode; reduced power wait mode – Peripheral clock enable register can disable clocks to unused modules, reducing currents; allows clocks to remain enabled to specific peripherals in stop3 mode • Peripherals – ACMP - one analog comparator with both positive and negative inputs; separately selectable interrupt on rising and falling comparator output; filtering – ADC - 12-channel, 10-bit resolution; 2.5 µs conversion time; data buffers with optional watermark; automatic compare function; internal bandgap reference channel; operation in stop mode; optional hardware trigger – CRC - programmable cyclic redundancy check module – FTM - two flex timer modulators modules including one 6-channel and one 2-channel ones; 16-bit counter; each channel can be configured for input capture, output compare, edge- or center-aligned PWM mode – IIC - One inter-integrated circuit module; up to 400 kbps; multi-master operation; programmable slave address; supporting broadcast mode and 10-bit addressing; supporting SMBUS and PMBUS – MTIM - one modulo timers with 8-bit prescaler and overflow interrupt – RTC - 16-bit real timer counter (RTC) – SCI - two serial communication interface (SCI/ UART) modules optional 13-bit break; full duplex non-return to zero (NRZ); LIN extension support • Clocks – Oscillator (XOSC) - loop-controlled Pierce oscillator; crystal or ceramic resonator range of 31.25 kHz to 39.0625 kHz or 4 MHz to 20 MHz – Internal clock source (ICS) - containing a frequencylocked-loop (FLL) controlled by internal or external reference; precision trimming of internal reference allowing 1% deviation across temperature range of 0 °C to 70 °C and 2% deviation across temperature range of -40 °C to 85 °C; up to 20 MHz • Input/Output – Up to 37 GPIOs including one output-only pin – One 8-bit keyboard interrupt module (KBI) – Two true open-drain output pins • System protection – Watchdog with independent clock source – Low-voltage detection with reset or interrupt; selectable trip points – Illegal opcode detection with reset – Illegal address detection with reset • Development support – Single-wire background debug interface – Breakpoint capability to allow three breakpoints setting during in-circuit debugging – On-chip in-circuit emulator (ICE) debug module containing two comparators and nine trigger modes NXP reserves the right to change the production detail specifications as may be required to permit improvements in the design of its products. • Package options – 44-pin LQFP – 32-pin LQFP – 20-pin TSSOP – 16-pin TSSOP MC9S08PL16 Series Data Sheet, Rev. 5, 06/2020 2 NXP Semiconductors Table of Contents 1 MCU block diagram...........................................................................4 6.2.2 Debug trace timing specifications................................16 2 Orderable part numbers......................................................................5 6.2.3 FTM module timing.....................................................17 3 Part identification............................................................................... 5 6.3 Thermal specifications...............................................................18 3.1 Description.................................................................................5 6.3.1 Thermal operating requirements.................................. 18 3.2 Format........................................................................................6 6.3.2 Thermal characteristics................................................ 18 3.3 Fields..........................................................................................6 7 Peripheral operating requirements and behaviors.............................. 19 3.4 Example..................................................................................... 6 7.1 External oscillator (XOSC) and ICS characteristics..................19 4 Parameter Classification.....................................................................6 7.2 NVM specifications................................................................... 21 5 Ratings................................................................................................7 7.3 Analog........................................................................................22 5.1 Thermal handling ratings...........................................................7 7.3.1 ADC characteristics..................................................... 22 5.2 Moisture handling ratings.......................................................... 7 7.3.2 Analog comparator (ACMP) electricals...................... 25 5.3 ESD handling ratings.................................................................7 7.4 Communication interfaces......................................................... 25 5.4 Voltage and current operating ratings........................................8 6 General............................................................................................... 9 7.4.1 8 6.1 Nonswitching electrical specifications...................................... 9 Inter-Integrated Circuit Interface (I2C) timing............ 25 Dimensions.........................................................................................26 8.1 Obtaining package dimensions.................................................. 26 6.1.1 DC characteristics........................................................ 9 6.1.2 Supply current characteristics...................................... 13 9.1 Signal multiplexing and pin assignments.................................. 27 6.1.3 EMC performance........................................................14 9.2 Device pin assignment...............................................................29 6.2 Switching specifications............................................................ 15 10 Revision history................................................................................. 31 6.2.1 9 Pinout................................................................................................. 27 Control timing..............................................................15 MC9S08PL16 Series Data Sheet, Rev. 5, 06/2020 NXP Semiconductors 3 MCU block diagram 1 MCU block diagram CPU BDC Port A HCS08 CORE PTA0/KBI0P0/FTM0CH0/ACMP0/ADP0 PTA1/KBI0P1/FTM0CH1/ACMP1/ADP1 PTA2/KBI0P2/RxD0/SDA1 PTA3/KBI0P3/TxD0/SCL1 PTA4/ACMPO/BKGD/MS2 PTA5/IRQ/TCLK0/RESET PTA6/ADP2 PTA7/ADP3 Port B The block diagram below shows the structure of the MCUs. PTB0/KBI0P4/RxD0/ADP4 PTB1/KBI0P5/TxD0/ADP5 PTB2/KBI0P6/ADP6 PTB3/KBI0P7/ADP7 PTB4/FTM2CH4 PTB5/FTM2CH5 PTB6/SDA/XTAL PTB7/SCL/EXTAL INTER-INTEGRATED CIRCUIT BUS (IIC) WDG 1 kHz LPO IRQ LVD INTERRUPT PRIORITY CONTROLLER(IPC) KEYBOARD INTERRUPT MODULE (KBI0) 8-BIT MODULO TIMER (MTIM0) 2-CH FLEX TIMER MODULE (FTM0) 6-CH FLEX TIMER ON-CHIP ICE AND DEBUG MODUE (DBG) MODULE (FTM2) Port C SYSTEM INTEGRATION MODULE (SIM) SERIAL COMMUNICATION SERIAL COMMUNICATION INTERFACE (SCI1) USER EEPROM MC9S08PL16 = 256 bytes MC9S08PL8 = 256 bytes REAL-TIME CLOCK (RTC) USER RAM MC9S08PL16 = 2,048 bytes MC9S08PL8 = 2,048 bytes ANALOG COMPARATOR (ACMP) Port D INTERFACE (SCI0) Port E USER FLASH MC9S08PL16 = 16,384 bytes MC9S08PL8 = 8,192 bytes 10 MHz INTERNAL CLOCK SOURCE (ICS) EXTAL XTAL VDD VSS VDD V SS VSS VREFH VDDA VREFL VSSA PTC0/FTM2CH0/ADP8 PTC1/FTM2CH1/ADP9 PTC2/FTM2CH2/ADP10 PTC3/FTM2CH3/ADP11 PTC4/FTM0CH0 PTC5/FTM0CH1 PTC6/RxD1 PTC7/TxD1 PTD0/FTM2CH2 PTD1/FTM2CH3 PTD2 PTD3 PTD4 PTD5 PTD6 PTD7 PTE0 PTE1 PTE2 PTE3/BUSOUT PTE4/TCLK2 EXTERNAL OSCILLATOR SOURCE (XOSC) POWER MANAGEMENT CONTROLLER (PMC) 12-CH 10-BIT ANALOG-TO-DIGITAL CONVERTER(ADC) CYCLIC REDUNDANCY CHECK (CRC) 1. PTA2 and PTA3 operate as true-open drain when working as output. 2. PTA4/ACMPO/BKGD/MS is an output-only pin when used as port pin. Figure 1. MCU block diagram MC9S08PL16 Series Data Sheet, Rev. 5, 06/2020 4 NXP Semiconductors Orderable part numbers 2 Orderable part numbers The following table summarizes the part numbers of the devices covered by this document. Table 1. Ordering information Part Number MC9S08PL16 MC9S08PL8 CLD CLC CTJ CTG CLC CTJ CTG Max. frequency (MHz) 20 20 20 20 20 20 20 Flash memory (KB) 16 16 16 16 8 8 8 RAM (KB) 2 2 2 2 2 2 2 EEPROM (B) 256 256 256 256 256 256 256 10-bit ADC 12ch 12ch 10ch 6ch 12ch 10ch 6ch 1 1 1 1 1 1 1 6ch+2ch 6ch+2ch 6ch+2ch 2ch+2ch 6ch+2ch 6ch+2ch 2ch+2ch 1 1 1 1 1 1 1 RTC Yes Yes Yes Yes Yes Yes Yes IIC Yes Yes Yes Yes Yes Yes Yes SCI (LIN Capable) 2 2 1 1 2 1 1 Watchdog Yes Yes Yes Yes Yes Yes Yes CRC Yes Yes Yes Yes Yes Yes Yes KBI pins 8 8 8 8 8 8 8 GPIO 37 30 18 14 30 18 14 44-LQFP 32-LQFP 20-TSSOP 16-TSSOP 32-LQFP 20-TSSOP 16-TSSOP ACMP 16-bit FlexTimer 8-bit Modulo timer Package 3 Part identification 3.1 Description Part numbers for the chip have fields that identify the specific part. You can use the values of these fields to determine the specific part you have received. MC9S08PL16 Series Data Sheet, Rev. 5, 06/2020 NXP Semiconductors 5 Parameter Classification 3.2 Format Part numbers for this device have the following format: MC 9 S08 PL AA B CC 3.3 Fields This table lists the possible values for each field in the part number (not all combinations are valid): Field Description Values MC Qualification status • MC = fully qualified, general market flow 9 Memory • 9 = flash based S08 Core • S08 = 8-bit CPU PL Device family • PL AA Approximate flash size in KB • 16 = 16 KB • 8 = 8 KB B Operating temperature range (°C) • C = –40 to 85 CC Package designator • • • • LD = 44-LQFP LC = 32-LQFP TJ = 20-TSSOP TG = 16-TSSOP 3.4 Example This is an example part number: MC9S08PL16CLC 4 Parameter Classification The electrical parameters shown in this supplement are guaranteed by various methods. To give the customer a better understanding, the following classification is used and the parameters are tagged accordingly in the tables where appropriate: Table 2. Parameter Classifications P Those parameters are guaranteed during production testing on each individual device. Table continues on the next page... MC9S08PL16 Series Data Sheet, Rev. 5, 06/2020 6 NXP Semiconductors Ratings Table 2. Parameter Classifications (continued) C Those parameters are achieved by the design characterization by measuring a statistically relevant sample size across process variations. T Those parameters are achieved by design characterization on a small sample size from typical devices under typical conditions unless otherwise noted. All values shown in the typical column are within this category. D Those parameters are derived mainly from simulations. NOTE The classification is shown in the column labeled “C” in the parameter tables where appropriate. 5 Ratings 5.1 Thermal handling ratings Symbol Description Min. Max. Unit Notes TSTG Storage temperature –55 150 °C 1 TSDR Solder temperature, lead-free — 260 °C 2 1. Determined according to JEDEC Standard JESD22-A103, High Temperature Storage Life. 2. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices. 5.2 Moisture handling ratings Symbol MSL Description Moisture sensitivity level Min. Max. Unit Notes — 3 — 1 1. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices. 5.3 ESD handling ratings Symbol Description Min. Max. Unit Notes VHBM Electrostatic discharge voltage, human body model -6000 +6000 V 1 VCDM Electrostatic discharge voltage, charged-device model -500 +500 V 2 Latch-up current at ambient temperature of 85 -100 +100 mA ILAT MC9S08PL16 Series Data Sheet, Rev. 5, 06/2020 NXP Semiconductors 7 Ratings 1. Determined according to JEDEC Standard JESD22-A114, Electrostatic Discharge (ESD) Sensitivity Testing Human Body Model (HBM). 2. Determined according to JEDEC Standard JESD22-C101, Field-Induced Charged-Device Model Test Method for Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components. 5.4 Voltage and current operating ratings Absolute maximum ratings are stress ratings only, and functional operation at the maxima is not guaranteed. Stress beyond the limits specified in below table may affect device reliability or cause permanent damage to the device. For functional operating conditions, refer to the remaining tables in this document. This device contains circuitry protecting against damage due to high static voltage or electrical fields; however, it is advised that normal precautions be taken to avoid application of any voltages higher than maximum-rated voltages to this high-impedance circuit. Reliability of operation is enhanced if unused inputs are tied to an appropriate logic voltage level (for instance, either VSS or VDD) or the programmable pullup resistor associated with the pin is enabled. Symbol Description Min. Max. Unit VDD Supply voltage –0.3 6.0 V IDD Maximum current into VDD — 120 mA Digital input voltage (except RESET, EXTAL, XTAL, or true open drain pin ) –0.3 VDD + 0.3 V Digital input voltage (true open drain pin ) -0.3 6 V Analog1, –0.3 VDD + 0.3 V –25 25 mA VDD – 0.3 VDD + 0.3 V VDIO VAIO ID VDDA RESET, EXTAL, and XTAL input voltage Instantaneous maximum current single pin limit (applies to all port pins) Analog supply voltage 1. All digital I/O pins, except open-drain pin , are internally clamped to VSS and VDD. is only clamped to VSS. MC9S08PL16 Series Data Sheet, Rev. 5, 06/2020 8 NXP Semiconductors General 6 General 6.1 Nonswitching electrical specifications 6.1.1 DC characteristics This section includes information about power supply requirements and I/O pin characteristics. Table 3. DC characteristics Symbol C — — VOH C Operating voltage Output high voltage All I/O pins, standarddrive strength C IOHT VOL D Output high current C Max total IOH for all ports Output low voltage VIH D P C VIL Typical1 Max Unit — 2.7 — 5.5 V 5 V, Iload = -5 mA VDD - 0.8 — — V 3 V, Iload = -2.5 mA VDD - 0.8 — — V 5V — — -100 mA 3V — — -50 — — 0.8 V 3 V, Iload = 2.5 mA — — 0.8 V mA All I/O pins, standard- 5 V, Iload = 5 drive strength mA C IOLT Min Descriptions P C Output low current Max total IOL for all ports 5V — — 100 3V — — 50 Input high voltage All digital inputs VDD>4.5V 0.70 × VDD — — VDD>2.7V 0.75 × VDD — — Input low voltage All digital inputs VDD>4.5V — — 0.30 × VDD V V VDD>2.7V — — 0.35 × VDD Vhys C Input hysteresis All digital inputs — 0.06 × VDD — — mV |IIn| P Input leakage current All input only pins (per pin) VIN = VDD or VSS — 0.1 1 µA |IOZ| P Hi-Z (offstate) leakage current All input/output (per pin) VIN = VDD or VSS — 0.1 1 µA |IOZTOT| C Total leakage All input only and I/O VIN = VDD or combined for VSS all inputs and Hi-Z pins — — 2 µA Table continues on the next page... MC9S08PL16 Series Data Sheet, Rev. 5, 06/2020 NXP Semiconductors 9 Nonswitching electrical specifications Table 3. DC characteristics (continued) Min Typical1 Max Unit — 30.0 — 50.0 kΩ PTA2 and PTA3 pin — 30.0 — 60.0 kΩ Single pin limit VIN < VSS, VIN > VDD -0.2 — 2 mA -5 — 25 Symbol C Descriptions RPU P Pullup resistors All digital inputs, when enabled (all I/O pins other than PTA2 and PTA3) RPU2 P Pullup resistors IIC D DC injection current3, 4, 5 Total MCU limit, includes sum of all stressed pins CIn C Input capacitance, all pins — — — 7 pF VRAM C RAM retention voltage — 2.0 — — V 1. Typical values are measured at 25 °C. Characterized, not tested. 2. The specified resistor value is the actual value internal to the device. The pullup value may appear higher when measured externally on the pin. 3. All functional non-supply pins, except for PTA2 and PTA3, are internally clamped to VSS and VDD. 4. Input must be current-limited to the value specified. To determine the value of the required current-limiting resistor, calculate resistance values for positive and negative clamp voltages, then use the large one. 5. Power supply must maintain regulation within operating VDD range during instantaneous and operating maximum current conditions. If the positive injection current (VIn > VDD) is higher than IDD, the injection current may flow out of VDD and could result in external power supply going out of regulation. Ensure that external VDD load will shunt current higher than maximum injection current when the MCU is not consuming power, such as no system clock is present, or clock rate is very low (which would reduce overall power consumption). Table 4. LVD and POR Specification Symbol C Description POR re-arm Min Typ Max Unit 1.5 1.75 2.0 V 4.2 4.3 4.4 V Level 1 falling (LVWV = 00) 4.3 4.4 4.5 V Level 2 falling (LVWV = 01) 4.5 4.5 4.6 V Level 3 falling (LVWV = 10) 4.6 4.6 4.7 V Level 4 falling (LVWV = 11) 4.7 4.7 4.8 V voltage1, 2 VPOR D VLVDH C VLVW1H C VLVW2H C VLVW3H C VLVW4H C VHYSH C High range low-voltage detect/warning hysteresis — 100 — mV VLVDL C Falling low-voltage detect threshold - low range (LVDV = 0) 2.56 2.61 2.66 V Falling low-voltage detect threshold - high range (LVDV = 1)3 Falling lowvoltage warning threshold high range Table continues on the next page... MC9S08PL16 Series Data Sheet, Rev. 5, 06/2020 10 NXP Semiconductors Nonswitching electrical specifications Table 4. LVD and POR Specification (continued) 1. 2. 3. 4. Symbol C VLVDW1L C VLVDW2L C VLVDW3L C VLVDW4L Description Min Typ Max Unit Level 1 falling (LVWV = 00) 2.62 2.7 2.78 V Level 2 falling (LVWV = 01) 2.72 2.8 2.88 V Level 3 falling (LVWV = 10) 2.82 2.9 2.98 V C Level 4 falling (LVWV = 11) 2.92 3.0 3.08 V VHYSDL C Low range low-voltage detect hysteresis — 40 — mV VHYSWL C Low range low-voltage warning hysteresis — 80 — mV VBG P Buffered bandgap output 4 1.14 1.16 1.18 V Falling lowvoltage warning threshold low range Maximum is highest voltage that POR is guaranteed. POR ramp time must be longer than 20us/V to get a stable startup. Rising thresholds are falling threshold + hysteresis. Voltage factory trimmed at VDD = 5.0 V, Temp = 25 °C 0.6 VDD-VOH (V) 0.5 0.4 85°C 0.3 25°C -40°C 0.2 0.1 0 1 2 3 4 5 6 IOH (mA) Figure 2. Typical IOH Vs. VDD-VOH (standard drive strength) (VDD = 5 V) MC9S08PL16 Series Data Sheet, Rev. 5, 06/2020 NXP Semiconductors 11 Nonswitching electrical specifications 0.8 0.7 VDD-VOH (V) 0.6 0.5 85°C 0.4 25°C -40°C 0.3 0.2 0.1 0 1 2 3 4 5 6 IOH (mA) Figure 3. Typical IOH Vs. VDD-VOH (standard drive strength) (VDD = 3 V) 0.5 VOL (V) 0.4 0.3 85°C 25°C 0.2 -40°C 0.1 0 1 2 3 4 5 6 IOL (mA) Figure 4. Typical IOL Vs. VOL (standard drive strength) (VDD = 5 V) MC9S08PL16 Series Data Sheet, Rev. 5, 06/2020 12 NXP Semiconductors Nonswitching electrical specifications 0.8 0.7 VOL (V) 0.6 0.5 85°C 0.4 25°C -40°C 0.3 0.2 0.1 0 1 2 3 4 5 6 IOL (mA) Figure 5. Typical IOL Vs. VOL (standard drive strength) (VDD = 3 V) 6.1.2 Supply current characteristics This section includes information about power supply current in various operating modes. Table 5. Supply current characteristics Num C Parameter Symbol Bus Freq VDD (V) Typical1 Max Unit Temp 1 C Run supply current FEI mode, all modules on; run from flash RIDD 20 MHz 5 7.60 — mA -40 to 85 °C 10 MHz 4.65 — 1 MHz 1.90 — mA -40 to 85 °C mA -40 to 85 °C C 2 C 20 MHz 7.05 — C 10 MHz 4.40 — 1 MHz 1.85 — 5.88 — 10 MHz 3.70 — 1 MHz 1.85 — 5.35 — 3.42 — C C Run supply current FEI mode, all modules off & gated; run from flash RIDD 20 MHz C 20 MHz C 10 MHz 3 5 3 1 MHz 3 P C Run supply current FBE mode, all modules on; run from RAM RIDD 1.80 — 10.9 14.0 10 MHz 6.10 — 1 MHz 1.69 — 8.18 — 5.14 — 20 MHz P 20 MHz C 10 MHz 5 3 Table continues on the next page... MC9S08PL16 Series Data Sheet, Rev. 5, 06/2020 NXP Semiconductors 13 Nonswitching electrical specifications Table 5. Supply current characteristics (continued) Num C Parameter Symbol Typical1 Max 1.44 — 8.50 13.0 10 MHz 5.07 — 1 MHz 1.59 — 6.11 — Bus Freq VDD (V) 1 MHz 4 P C 5 Run supply current FBE mode, all modules off & gated; run from RAM RIDD 20 MHz C 10 MHz 4.10 — 1 MHz 1.34 — 5.95 — 10 MHz 3.50 — 1 MHz 1.24 — 5.45 — 10 MHz 3.25 — 1 MHz 1.20 — P Wait mode current FEI mode, all modules on WIDD C 7 5 P C 6 20 MHz C 20 MHz 20 MHz S3IDD C Stop3 mode supply current no clocks active (except 1kHz LPO clock)2, 3 C ADC adder to stop3 — C ADLPC = 1 3 5 3 — 5 1.35 — — 3 1.3 — — 5 40 — 3 39 — 5 128 — 3 124 — Unit Temp mA -40 to 85 °C mA -40 to 85 °C µA -40 to 85 °C -40 to 85 °C µA -40 to 85 °C µA -40 to 85 °C ADLSMP = 1 ADCO = 1 MODE = 10B ADICLK = 11B 8 C LVD adder to stop34 C 1. 2. 3. 4. — — Data in Typical column was characterized at 5.0 V, 25 °C or is typical recommended value. RTC adder cause