Freescale Semiconductor
Technical Data
Document Number: MD7IC1812N
Rev. 0, 5/2015
RF LDMOS Wideband Integrated
Power Amplifiers
The MD7IC1812N wideband integrated circuit is designed with on--chip
matching that makes it usable from 1805 to 2170 MHz. This multi--stage
structure is rated for 24 to 32 V operation and covers all typical cellular base
station modulation formats.
Driver Application — 1800 MHz
Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ1A = IDQ1B = 20 mA, IDQ2A = IDQ2B = 70 mA, Pout = 1.3 W Avg.,
IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
PAE
(%)
ACPR
(dBc)
1805 MHz
31.9
13.0
–50.3
1840 MHz
31.6
13.4
–50.2
1880 MHz
31.5
14.0
–49.8
Capable of Handling 5:1 VSWR, @ 32 Vdc, 1840 MHz, 19 W CW
Output Power (3 dB Input Overdrive from Rated Pout)
Driver Application — 1900 MHz
Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ1A = IDQ1B = 20 mA, IDQ2A = IDQ2B = 70 mA, Pout = 1.3 W Avg.,
IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
PAE
(%)
ACPR
(dBc)
1930 MHz
32.2
15.2
–51.6
1960 MHz
32.1
15.1
–52.3
1995 MHz
32.0
15.1
–52.6
MD7IC1812NR1
MD7IC1812GNR1
1805–2170 MHz, 1.3 W AVG., 28 V
SINGLE W--CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
TO--270WB--14
PLASTIC
MD71C1812NR1
TO--270WBG--14
PLASTIC
MD71C1812GNR1
Driver Application — 2100 MHz
Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ1A = IDQ1B = 20 mA, IDQ2A = IDQ2B = 70 mA, Pout = 1.3 W Avg.,
IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
PAE
(%)
ACPR
(dBc)
2110 MHz
32.2
14.8
–52.8
2140 MHz
32.3
14.6
–52.6
2170 MHz
32.5
14.4
–49.4
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current
Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf and search for AN1977 or AN1987.
Freescale Semiconductor, Inc., 2015. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MD7IC1812NR1 MD7IC1812GNR1
1
VDS1A
RFinA
VDS1A
VGS2A
VGS1A
RFinA
NC
NC
NC
NC
RFinB
VGS1B
VGS2B
VDS1B
RFout1/VDS2A
VGS1A
Quiescent Current
Temperature Compensation (1)
VGS2A
VGS1B
Quiescent Current
Temperature Compensation (1)
VGS2B
RFinB
1
2
3
4
5
6
7
8
9
10
11
12
14
13
RFout1/VDS2A
RFout2/VDS2B
(Top View)
RFout2/VDS2B
Note: Exposed backside of the package is
the source terminal for the transistors.
VDS1B
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
–0.5, +65
Vdc
Gate--Source Voltage
VGS
–0.5, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
– 65 to +150
C
TC
150
C
Case Operating Temperature
Operating Junction Temperature
(2,3)
Input Power
TJ
225
C
Pin
20
dBm
Symbol
Value (3,4)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 73C, 1.3 W CW
Stage 1, 28 Vdc, IDQ1A = IDQ1B = 40 mA, 1840 MHz
Stage 2, 28 Vdc, IDQ2A = IDQ2B = 180 mA, 1840 MHz
RJC
C/W
6.5
2.9
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
III
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
C
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current
Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf and search for AN1977 or AN1987.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf/calculators.
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955.
MD7IC1812NR1 MD7IC1812GNR1
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 5 Adc)
VGS(th)
1.2
2.0
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1A = IDQ1B = 20 mAdc)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ1A = IDQ1B = 20 mAdc, Measured in Functional Test)
VGG(Q)
4.2
5.0
5.7
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 24 Adc)
VGS(th)
1.2
2.0
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ2A = IDQ2B = 70 mAdc)
VGS(Q)
—
2.0
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ2A = IDQ2B = 70 mAdc, Measured in Functional Test)
VGG(Q)
3.2
4.0
4.7
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 240 mAdc)
VDS(on)
0.1
0.24
1.5
Vdc
Characteristic
Stage 1 -- Off Characteristics (1)
Stage 1 -- On Characteristics (1)
Stage 2 -- Off Characteristics (1)
Stage 2 -- On Characteristics (1)
Functional Tests (2,3) (In Freescale Wideband 1805–1880 Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = IDQ1B = 20 mA,
IDQ2A = IDQ2B = 70 mA, Pout = 1.3 W Avg., f = 1880 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
Gps
31.0
31.5
35.0
dB
Power Added Efficiency
PAE
13.0
14.0
—
%
ACPR
—
–49.8
–47.5
dBc
Adjacent Channel Power Ratio
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing
(GN) parts.
(continued)
MD7IC1812NR1 MD7IC1812GNR1
RF Device Data
Freescale Semiconductor, Inc.
3
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = IDQ1B = 20 mA, IDQ2A = IDQ2B = 70 mA,
1805–1880 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
12
—
W
Pout @ 3 dB Compression Point, CW
P3dB
—
13
—
W
VBWres
—
140
—
MHz
—
—
2.5
1.7
—
—
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Quiescent Current Accuracy over Temperature (1)
with 2 k Gate Feed Resistors (–30 to 85C)
with 2 k Gate Feed Resistors (–30 to 85C)
Stage 1
Stage 2
IQT
%
Gain Flatness in 75 MHz Bandwidth @ Pout = 1.3 W Avg.
GF
—
0.3
—
dB
Gain Variation over Temperature
(–30C to +85C)
G
—
0.03
—
dB/C
P1dB
—
0.014
—
dB/C
Output Power Variation over Temperature
(–30C to +85C)
Table 6. Ordering Information
Device
MD7IC1812NR1
MD7IC1812GNR1
Tape and Reel Information
R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel
Package
TO--270WB--14
TO--270WBG--14
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current
Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf and search for AN1977 or AN1987.
MD7IC1812NR1 MD7IC1812GNR1
4
RF Device Data
Freescale Semiconductor, Inc.
R2
C31
C24
R1
C32
MD7IC Dual Path
Rev. 2
C25
C2
VDD2A
C23
VDD1A
VGG2A
VGG1A
C1
C17
C19 C29
C36
C35
R5
C8
C37
C38
C9
C10
CUT OUT AREA
C5
C7
Z1
R6
C13
C6
C21
C15
C16
C11
C12
Z2
C22
C14
D44014
C20 C30
R3
C18
R4
C28
C27
VDD1B
VGG1B
VGG2B
C26
C4
C33
VDD2B
C34
C3
Figure 3. MD7IC1812NR1 Test Circuit Component Layout
Table 7. MD7IC1812NR1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4
3.9 pF Chip Capacitors
ATC600F3R9BT250XT
ATC
C5, C6, C7, C8
1.0 pF Chip Capacitors
ATC600F1R0BT250XT
ATC
C9, C10, C11, C12
0.6 pF Chip Capacitors
ATC600F0R6BT250XT
ATC
C13, C14
0.8 pF Chip Capacitors
ATC600F0R8BT250XT
ATC
C15, C16
1.2 pF Chip Capacitors
ATC600F1R2BT250XT
ATC
C17, C18, C19, C20
10 pF Chip Capacitors
ATC600F10RBT250XT
ATC
C21, C22
5.6 pF Chip Capacitors
ATC600F5R6BT250XT
ATC
C23, C24, C25, C26, C27, C28,
C29, C30, C31, C32, C33, C34
10 F Chip Capacitors
C5750X7S2A106M230KB
TDK
C35, C36, C37, C38
22 nF Chip Capacitors
GRM31MR72A223KA01L
Murata
R1, R2, R3, R4
2 K, 1/4 W Chip Resistors
CRCW12062K00FKEA
Vishay
R5, R6
50 , 20 W Termination
375375--6X50--2
Anaren
Z1, Z2
1800–2300 MHz Band, 90, 3 dB Hybrid Couplers
X3C21P1-03S
Anaren
PCB
Rogers RO4350B, 0.020, r = 3.66
D44014
MTL
MD7IC1812NR1 MD7IC1812GNR1
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS — 1805–1880 MHz
14
32.4
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
Gps
32.3
13
12
32.2
32.1
31.9
1780
1800
–49.5
0.2
–50.5
–51
PARC
31.8
1760
0.25
–50
ACPR
32
–49
1820 1840 1860
f, FREQUENCY (MHz)
1880
1900
0.15
0.1
0.05
PARC (dB)
15
PAE
32.5
PAE, POWER ADDED
EFFICIENCY (%)
32.6
Gps, POWER GAIN (dB)
16
VDD = 28 Vdc, Pout = 1.3 W (Avg.), IDQ1A = IDQ1B = 20 mA
IDQ2A = IDQ2B = 70 mA, Single--Carrier W--CDMA
32.7
ACPR (dBc)
32.8
0
–51.5
1920
IMD, INTERMODULATION DISTORTION (dBc)
Figure 4. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 1.3 Watts Avg.
–15
VDD = 28 Vdc, Pout = 7.6 W (PEP), IDQ1A = IDQ1B = 20 mA
IDQ2A = IDQ2B = 70 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1840 MHz
–25
–35
IM3--L
IM3--U
IM5--U
IM5--L
–45
IM7--U
IM7--L
–55
–65
1
10
300
100
TWO--TONE SPACING (MHz)
32
0
31
30
29
28
27
VDD = 28 Vdc, IDQ1A = IDQ1B = 20 mA
IDQ2A = IDQ2B = 70 mA, f = 1840 MHz
ACPR
PAE
–1
–1 dB = 3.4 W
–2
1
3
5
7
Pout, OUTPUT POWER (WATTS)
–30
40
20
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
–5
50
Gps
–2 dB = 5 W
–4
–25
30
–3 dB = 6.7 W
–3
60
PARC
9
10
0
11
–35
–40
ACPR (dBc)
1
D DRAIN EFFICIENCY (%)
33
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing
–45
–50
–55
Figure 6. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MD7IC1812NR1 MD7IC1812GNR1
6
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 1805–1880 MHz
Gps, POWER GAIN (dB)
32
1805 MHz
31
PAE
1840 MHz 1880 MHz
ACPR
30
29 1805 MHz
27
20
1880 MHz
28
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
1840 MHz
1
50
40
1805 MHz
1840 MHz
1880 MHz
30
60
Gps
10
0
0
30
10
Pout, OUTPUT POWER (WATTS) AVG.
--10
--20
--30
--40
ACPR (dBc)
VDD = 28 Vdc, IDQ1A = IDQ1B = 20 mA, IDQ2A = IDQ2B = 70 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
PAE, POWER ADDED EFFICIENCY (%)
33
--50
--60
Figure 7. Single--Carrier W--CDMA Power Gain, Power Added
Efficiency and ACPR versus Output Power
35
34
GAIN (dB)
33
Gain
32
31
VDD = 28 Vdc
Pin = 0 dBm
IDQ1A = IDQ1B = 20 mA
IDQ2A = IDQ2B = 70 mA
30
29
1600
1700
1800
1900 2000 2100
f, FREQUENCY (MHz)
2200
2300
2400
Figure 8. Broadband Frequency Response
MD7IC1812NR1 MD7IC1812GNR1
RF Device Data
Freescale Semiconductor, Inc.
7
Table 8. Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, IDQ1A = IDQ1B = 12 mA, IDQ2A = IDQ2B = 80 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
Zload
()
(1)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
9.75 – j4.18
26.4
40.8
12
59.9
–5
9.94 – j4.69
25.5
40.8
12
59.8
–4
22.3 – j11.4
9.53 – j5.22
24.7
40.8
12
59.6
–3
21.2 – j6.08
21.2 – j8.50
9.13 – j5.50
24.3
40.9
12
59.5
–3
1960
21.3 – j7.19
20.7 – j7.35
9.42 – j5.43
23.9
40.8
12
58.5
–3
1995
23.3 – j9.53
19.9 – j6.74
9.23 – j5.43
23.8
40.8
12
58.1
–3
f
(MHz)
Zsource
()
Zin
()
1800
18.6 + j0.84
21.6 – j14.9
1840
18.9 – j2.06
22.0 – j13.4
1880
19.9 – j5.86
1930
2110
16.2 + j0.01
16.6 + j0.14
9.12 – j5.48
24.5
40.8
12
57.6
–4
2140
16.2 – j1.24
16.9 + j2.33
9.27 – j5.44
24.6
40.8
12
57.5
–4
2170
16.1 – j2.79
17.2 + j4.75
9.44 – j5.76
24.9
40.8
12
56.8
–4
Max Output Power
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1800
18.6 + j0.84
22.8 – j15.9
10.8 – j4.58
24.1
41.5
14
60.9
–6
1840
18.9 – j2.06
22.7 – j14.6
10.9 – j5.19
23.2
41.6
14
60.6
–5
1880
19.9 – j5.86
22.6 – j12.7
10.4 – j5.78
22.4
41.6
14
60.2
–5
1930
21.2 – j6.08
21.2 – j8.50
9.13 – j5.50
24.3
40.9
12
59.5
–3
1960
21.3 – j7.19
20.7 – j7.35
9.42 – j5.43
23.9
40.8
12
58.5
–3
1995
23.3 – j9.53
19.9 – j6.74
9.23 – j5.43
23.8
40.8
12
58.1
–3
2110
16.2 + j0.01
16.6 + j0.14
9.12 – j5.48
24.5
40.8
12
57.6
–4
2140
16.2 – j1.24
16.9 + j2.33
9.27 – j5.44
24.6
40.8
12
57.5
–4
2170
16.1 – j2.79
17.2 + j4.75
9.44 – j5.76
24.9
40.8
12
56.8
–4
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Note: Measurement made on a per side basis.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
MD7IC1812NR1 MD7IC1812GNR1
8
RF Device Data
Freescale Semiconductor, Inc.
Table 9. Load Pull Performance — Maximum Drain Efficiency Tuning
VDD = 28 Vdc, IDQ1A = IDQ1B = 12 mA, IDQ2A = IDQ2B = 80 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
Zload
()
(1)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
5.59 – j0.05
27.8
39.2
8
68.3
–9
5.29 – j1.05
26.9
39.2
8
67.6
–9
23.1 – j7.30
5.08 – j1.75
26.1
39.3
8
67.4
–9
21.2 – j6.08
22.4 – j5.16
4.95 – j2.29
25.7
39.4
9
67.0
–9
1960
21.3 – j7.19
22.0 – j4.53
5.22 – j2.57
25.3
39.6
9
66.5
–8
1995
23.3 – j9.53
21.7 – j3.81
5.26 – j2.76
25.1
39.6
9
65.4
–8
f
(MHz)
Zsource
()
Zin
()
1800
18.6 + j0.84
21.8 – j10.1
1840
18.9 – j2.06
22.5 – j9.13
1880
19.9 – j5.86
1930
2110
16.2 + j0.01
18.8 + j2.28
4.73 – j3.36
25.8
39.5
9
64.3
–9
2140
16.2 – j1.24
18.1 + j3.56
4.67 – j3.68
26.1
39.5
9
64.2
–10
2170
16.1 – j2.79
18.9 + j6.77
5.18 – j3.92
26.4
39.7
9
63.3
–10
Max Drain Efficiency
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1800
18.6 + j0.84
22.7 – j12.6
6.21 – j0.66
25.6
40.2
11
69.5
–10
1840
18.9 – j2.06
23.1 – j11.5
5.87 – j1.57
24.8
40.2
11
68.7
–10
1880
19.9 – j5.86
23.6 – j9.16
5.27 – j1.95
24.1
40.0
10
68.0
–11
1930
21.2 – j6.08
22.4 – j5.16
4.95 – j2.29
25.7
39.4
9
67.0
–9
1960
21.3 – j7.19
22.0 – j4.53
5.22 – j2.57
25.3
39.6
9
66.5
–8
1995
23.3 – j9.53
21.7 – j3.81
5.26 – j2.76
25.1
39.6
9
65.4
–8
2110
16.2 + j0.01
18.8 + j2.28
4.73 – j3.36
25.8
39.5
9
64.3
–9
2140
16.2 – j1.24
18.1 + j3.56
4.67 – j3.68
26.1
39.5
9
64.2
–10
2170
16.1 – j2.79
18.9 + j6.77
5.18 – j3.92
26.4
39.7
9
63.3
–10
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Note: Measurement made on a per side basis.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
MD7IC1812NR1 MD7IC1812GNR1
RF Device Data
Freescale Semiconductor, Inc.
9
R2
C31
C24
R1
C32
MD7IC Dual Path
Rev. 2
C25
C2
VDD2A
C23
VDD1A
VGG2A
VGG1A
C1
C17
C19 C29
C36
C35
R5
C8
C37
C38
C9
C10
CUT OUT AREA
C5
C7
Z1
R6
C13
C6
C21
C15
C16
C11
C12
Z2
C22
C14
D44014
C20 C30
R3
C18
R4
C28
VGG1B
C27
VDD1B
C26
VGG2B
C4
VDD2B
C34
C3
C33
Figure 9. MD7IC1812NR1 Test Circuit Component Layout — 1930–2170 MHz
Table 10. MD7IC1812NR1 Test Circuit Component Designations and Values — 1930–2170 MHz
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4
3.3 pF Chip Capacitors
ATC600F3R3BT250XT
ATC
C5, C7
2.0 pF Chip Capacitors
ATC600F2R0BT250XT
ATC
C6, C8
1.5 pF Chip Capacitors
ATC600F1R5BT250XT
ATC
C9, C10, C11, C12
0.6 pF Chip Capacitors
ATC600F0R6BT250XT
ATC
C13, C14
0.8 pF Chip Capacitors
ATC600F0R8BT250XT
ATC
C15, C16
1.2 pF Chip Capacitors
ATC600F1R2BT250XT
ATC
C17, C18, C19, C20
10 pF Chip Capacitors
ATC600F10RBT250XT
ATC
C21, C22
5.6 pF Chip Capacitors
ATC600F5R6BT250XT
ATC
C23, C24, C25, C26, C27, C28,
C29, C30, C31, C32, C33, C34
10 F Chip Capacitors
C5750X7S2A106M230KB
TDK
C35, C36, C37, C38
22 nF Chip Capacitors
GRM31BR72E223KW01L
Murata
R1, R2, R3, R4
2 K, 1/4 W Chip Resistors
CRCW12062K00FKEA
Vishay
R5, R6
50 , 20 W Termination
375375--6X50--2
Anaren
Z1, Z2
1800–2300 MHz Band, 90, 3 dB Hybrid Couplers
X3C21P1-03S
Anaren
PCB
Rogers RO4350B, 0.020, r = 3.66
D44014
MTL
MD7IC1812NR1 MD7IC1812GNR1
10
RF Device Data
Freescale Semiconductor, Inc.
32.6 3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
32.5
32.4
32.3
15.5
15
14.5
PAE
Gps
PARC
14
–50.5
0
–51
–0.05
32.2
–51.5
32.1
–52
32
31.9
1890
–52.5
ACPR
1930
1970
2010
2050 2090
f, FREQUENCY (MHz)
2130
2170
ACPR (dBc)
Gps, POWER GAIN (dB)
VDD = 28 Vdc, Pout = 1.3 W (Avg.), IDQ1A = IDQ1B = 20 mA
32.8 I
DQ2A = IDQ2B = 70 mA, Single--Carrier W--CDMA
32.7
–0.1
–0.15
–0.2
PARC (dB)
16
32.9
PAE, POWER ADDED
EFFICIENCY (%)
TYPICAL CHARACTERISTICS — 1930–2170 MHz
–0.25
–53
2210
Figure 10. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 1.3 Watts Avg.
60
PAE
50
ACPR
40
30
30
1900 MHz
2000 MHz
28 2200 MHz
2200 MHz
Gps
20
2000 MHz
26
24
1900 MHz
1
10
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
0
0
30
10
Pout, OUTPUT POWER (WATTS) AVG.
--10
--20
--30
--40
ACPR (dBc)
VDD = 28 Vdc, IDQ1A = IDQ1B = 20 mA
IDQ2A = IDQ2B = 70 mA, Single--Carrier W--CDMA
34 3.84 MHz Channel Bandwidth
2200 MHz
32
2000 MHz
1900 MHz
PAE, POWER ADDED EFFICIENCY (%)
Gps, POWER GAIN (dB)
36
--50
--60
Figure 11. Single--Carrier W--CDMA Power Gain, Power Added
Efficiency and ACPR versus Output Power
39
36
Gain
GAIN (dB)
33
30
VDD = 28 Vdc
Pin = 0 dBm
IDQ1A = IDQ1B = 20 mA
IDQ2A = IDQ2B = 70 mA
27
24
21
1450
1600
1750
1900 2050 2200
f, FREQUENCY (MHz)
2350
2500
2650
Figure 12. Broadband Frequency Response
MD7IC1812NR1 MD7IC1812GNR1
RF Device Data
Freescale Semiconductor, Inc.
11
PACKAGE DIMENSIONS
MD7IC1812NR1 MD7IC1812GNR1
12
RF Device Data
Freescale Semiconductor, Inc.
MD7IC1812NR1 MD7IC1812GNR1
RF Device Data
Freescale Semiconductor, Inc.
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MD7IC1812NR1 MD7IC1812GNR1
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RF Device Data
Freescale Semiconductor, Inc.
MD7IC1812NR1 MD7IC1812GNR1
RF Device Data
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MD7IC1812NR1 MD7IC1812GNR1
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RF Device Data
Freescale Semiconductor, Inc.
MD7IC1812NR1 MD7IC1812GNR1
RF Device Data
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17
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.freescale.com/rf
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
May 2015
Description
Initial Release of Data Sheet
MD7IC1812NR1 MD7IC1812GNR1
18
RF Device Data
Freescale Semiconductor, Inc.
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MD7IC1812NR1 MD7IC1812GNR1
Document
Number:
RF
Device
Data MD7IC1812N
Rev. 0, 5/2015Semiconductor, Inc.
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