0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
MD7IC2250NBR1

MD7IC2250NBR1

  • 厂商:

    NXP(恩智浦)

  • 封装:

    TO-272-14

  • 描述:

    IC AMP PWR RF 2100MHZ TO272-14

  • 数据手册
  • 价格&库存
MD7IC2250NBR1 数据手册
Freescale Semiconductor Technical Data Document Number: MD7IC2250N Rev. 0, 12/2010 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2250N wideband integrated circuit is designed with on--chip matching that makes it usable from 2000 to 2200 MHz. This multi--stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1(A+B) = 80 mA, IDQ2(A+B) = 520 mA, Pout = 5.3 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) PAE (%) ACPR (dBc) 2110 MHz 31.2 17.0 --48.3 2140 MHz 31.1 16.8 --49.3 2170 MHz 31.1 16.8 --50.1 MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1 2110--2170 MHz, 5.3 W AVG., 28 V SINGLE W--CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1618--02 TO--270 WB--14 PLASTIC MD7IC2250NR1 • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 63 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 1 dB Compression Point ≃ 54 Watts CW Features • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • On--Chip Matching (50 Ohm Input, DC Blocked) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) • Integrated ESD Protection • Designed for Digital Predistortion Error Correction Systems • Optimized for Doherty Applications • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel. CASE 1621--02 TO--270 WB--14 GULL PLASTIC MD7IC2250GNR1 CASE 1617--02 TO--272 WB--14 PLASTIC MD7IC2250NBR1 VDS1A RFinA RFout1/VDS2A VGS1A Quiescent Current Temperature Compensation (1) VGS2A VGS1B Quiescent Current Temperature Compensation (1) VGS2B RFinB RFout2/VDS2B VDS1A VGS2A VGS1A RFinA NC NC NC NC RFinB VGS1B VGS2B VDS1B 1 2 3 4 5 6 7 8 9 10 11 12 14 13 RFout1/VDS2A RFout2/VDS2B (Top View) Note: Exposed backside of the package is the source terminal for the transistors. VDS1B Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987. © Freescale Semiconductor, Inc., 2010. All rights reserved. RF Device Data Freescale Semiconductor MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --0.5, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg -- 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Input Power Pin 28 dBm Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 74°C, 5.3 W CW, 2170 MHz Stage 1, 28 Vdc, IDQ1(A+B) = 80 mA Stage 2, 28 Vdc, IDQ2(A+B) = 520 mA Case Temperature 80°C, 50 W CW, 2170 MHz Stage 1, 28 Vdc, IDQ1(A+B) = 80 mA Stage 2, 28 Vdc, IDQ2(A+B) = 520 mA RθJC °C/W 5.3 1.1 5.0 0.95 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1A (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) II (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (4) (VDS = 10 Vdc, ID = 23 μAdc) VGS(th) 1.2 2.0 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1(A+B) = 80 mA) VGS(Q) — 2.7 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ1(A+B) = 80 mA, Measured in Functional Test) VGG(Q) 6.0 7.0 8.0 Vdc Characteristic Stage 1 -- Off Characteristics (4) Stage 1 -- On Characteristics 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 4. Each side of device measured separately. (continued) MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 150 μAdc) VGS(th) 1.2 2.0 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2(A+B) = 520 mA) VGS(Q) — 2.7 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ2(A+B) = 520 mA, Measured in Functional Test) VGG(Q) 5.5 6.3 7.5 Vdc Drain--Source On--Voltage (1) (VGS = 10 Vdc, ID = 1 Adc) VDS(on) 0.1 0.24 1.2 Vdc Stage 2 -- Off Characteristics (1) Stage 2 -- On Characteristics Functional Tests (2,3) (In Freescale Wideband 2110--2170 Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1(A+B) = 80 mA, IDQ2(A+B) = 520 mA, Pout = 5.3 W Avg., f = 2170 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 30.0 31.1 34.0 dB Power Added Efficiency PAE 15.0 16.8 — % ACPR — --50.1 --47.0 dBc IRL — --14 --9 dB Adjacent Channel Power Ratio Input Return Loss Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1(A+B) = 80 mA, IDQ2(A+B) = 520 mA, Pout = 5.3 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency Gps (dB) PAE (%) ACPR (dBc) IRL (dB) 2110 MHz 31.2 17.0 --48.3 --9 2140 MHz 31.1 16.8 --49.3 --11 2170 MHz 31.1 16.8 --50.1 --14 1. Each side of device measured separately. 2. Part internally matched both on input and output. 3. Measurement made with device in straight lead configuration before any lead forming operation is applied. (continued) MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1 RF Device Data Freescale Semiconductor 3 Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1(A+B) = 80 mA, IDQ2(A+B) = 520 mA, 2110--2170 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB IMD Symmetry @ 50 W PEP, Pout where IMD Third Order Intermodulation  30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres Quiescent Current Accuracy over Temperature (1,2) with 4.7 kΩ Gate Feed Resistors (--30 to 85°C) Stage 1 Stage 2 ∆IQT — 54 — W MHz — 16 — — 70 — — — 1.5 5.0 — — MHz % Gain Flatness in 60 MHz Bandwidth @ Pout = 5.3 W Avg. GF — 0.1 — dB Gain Variation over Temperature (--30°C to +85°C) ∆G — 0.028 — dB/°C ∆P1dB — 0.028 — dB/°C Output Power Variation over Temperature (--30°C to +85°C) 1. Each side of device measured separately. 2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.Select Documentation/Application Notes -- AN1977 or AN1987. MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1 4 RF Device Data Freescale Semiconductor VD1A VG2A VG1A VD2 C7 R2 C12 C5 C1 C14 C3 R1 C18 C9 CUT OUT AREA C16 C20 C17 C21 C11 C10 MD7IC2250N Rev. 2 C19 R3 VG1B C4 C13 C6 C2 R4 C15 VD2 C8 VG2B VD1B Figure 3. MD7IC2250NR1(GNR1)(NBR1) Test Circuit Component Layout Table 6. MD7IC2250NR1(GNR1)(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C3, C4 10 μF Chip Capacitors GRM55DR61H106KA88L Murata C5, C6, C7, C8 5.6 pF Chip Capacitors ATC600F5R6BT250XT ATC C9, C10 2.0 pF Chip Capacitors ATC600F2R0BT250XT ATC C11 33 pF Chip Capacitor ATC600F330JT250XT ATC C12, C13 1.0 μF Chip Capacitors GRM31MR71H105KA88L Murata C14, C15, C16, C17, C18, C19 4.7 μF Chip Capacitors GRM31CR71H475KA12L Murata C20 1.8 pF Chip Capacitor ATC600F1R8BT250XT ATC C21 1.5 pF Chip Capacitor ATC100B1R5BT500XT ATC R1, R2, R3, R4 4.7 kΩ Chip Resistors CRCW12064K70FKEA Vishay PCB 0.020″, εr = 3.5 RF35A2 Taconic MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1 RF Device Data Freescale Semiconductor 5 Single--ended λ 4 λ Quadrature combined 4 λ 4 λ λ 2 2 Doherty Push--pull Figure 4. Possible Circuit Topologies MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1 6 RF Device Data Freescale Semiconductor 31.4 16.6 Gps 16.4 16.2 PAE 31.3 16 Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 31.2 31.1 --47 --5 --48 --9 --49 31 30.9 ACPR --50 30.8 --51 IRL 30.7 2060 2080 2100 2120 2140 2160 2180 2200 --52 2220 --13 --17 --21 --25 IRL, INPUT RETURN LOSS (dB) 31.5 Gps, POWER GAIN (dB) 16.8 VDD = 28 Vdc, Pout = 5.3 W (Avg.), IDQ1(A+B) = 80 mA IDQ2(A+B) = 520 mA 31.6 ACPR (dBc) 31.7 PAE, POWER ADDED EFFICIENCY (%) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 5. Power Gain, Power Added Efficiency, IRL and ACPR Broadband Performance @ Pout = 5.3 Watts Avg. --10 VDD = 28 Vdc, Pout = 50 W (PEP), IDQ1(A+B) = 80 mA IDQ2(A+B) = 520 mA, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz --20 IM3--U --30 IM3--L IM5--L --40 IM5--U IM7--L IM7--U --50 --60 1 10 100 TWO--TONE SPACING (MHz) 32.5 0 32 31.5 31 30.5 30 Gps --1 40 30 --1 dB = 13 W --3 10 --3 dB = 24 W ACPR 5 20 PARC PAE --4 --5 50 --2 dB = 18 W --2 0 10 15 20 25 --20 60 VDD = 28 Vdc, IDQ1(A+B) = 80 mA, IDQ2(A+B) = 520 mA f = 2140 MHz, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF --25 --30 --35 ACPR (dBc) 1 PAE, POWER ADDED EFFICIENCY (%) 33 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) Figure 6. Intermodulation Distortion Products versus Two--Tone Spacing --40 --45 --50 30 Pout, OUTPUT POWER (WATTS) Figure 7. Output Peak--to--Average Ratio Compression (PARC) versus Output Power MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS 60 32 30 2170 MHz ACPR 2140 MHz 2110 MHz 28 40 20 Gps 10 0 100 24 1 50 30 2170 MHz 2140 MHz 2110 MHz 26 PAE 0 PAE, POWER ADDED EFFICIENCY (%) Gps, POWER GAIN (dB) VDD = 28 Vdc, IDQ1(A+B) = 80 mA, IDQ2(A+B) = 520 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 34 Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 10 --10 --20 --30 --40 ACPR (dBc) 36 --50 --60 Pout, OUTPUT POWER (WATTS) AVG. Figure 8. Single--Carrier W--CDMA Power Gain, Power Added Efficiency and ACPR versus Output Power 10 40 0 Gain 30 --10 25 --20 VDD = 28 Vdc Pin = 0 dBm IDQ1(A+B) = 80 mA IDQ2(A+B) = 520 mA 20 15 10 1500 1650 1800 1950 IRL (dB) GAIN (dB) 35 --30 IRL --40 2100 2250 2400 2550 --50 2700 f, FREQUENCY (MHz) Figure 9. Broadband Frequency Response MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1 8 RF Device Data Freescale Semiconductor W--CDMA TEST SIGNAL 100 10 0 --10 Input Signal --30 0.1 0.01 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 3.84 MHz Channel BW --20 1 (dB) PROBABILITY (%) 10 0 1 2 3 4 5 6 --40 --50 --60 +ACPR in 3.84 MHz Integrated BW --ACPR in 3.84 MHz Integrated BW --70 --80 7 8 9 PEAK--TO--AVERAGE (dB) Figure 10. CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal 10 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 11. Single--Carrier W--CDMA Spectrum MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1 RF Device Data Freescale Semiconductor 9 VDD = 28 Vdc, IDQ1(A+B) = 80 mA, IDQ2(A+B) = 520 mA, Pout = 5.3 W Avg. f MHz Zsource Ω Zload Ω 2060 17.0 + j4.49 5.12 -- j3.98 2080 17.2 + j4.94 5.07 -- j4.10 2100 17.4 + j5.41 5.00 -- j4.23 2120 17.7 + j5.88 4.90 -- j4.36 2140 17.9 + j6.36 4.76 -- j4.88 2160 18.2 + j6.84 4.59 -- j4.60 2180 18.4 + j7.33 4.38 -- j4.69 2200 18.7 + j7.84 4.15 -- j4.77 2220 19.0 + j8.35 3.91 -- j4.82 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1 10 RF Device Data Freescale Semiconductor ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS VDD = 28 Vdc, IDQ1A = 40 mA, IDQ2A = 260 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle 51 Ideal 50 Pout, OUTPUT POWER (dBm) 49 48 47 46 Actual 45 2170 MHz 2110 MHz 44 43 2170 MHz 42 2140 MHz 2140 MHz 2110 MHz 41 40 9 10 11 12 13 15 14 16 17 18 19 20 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V P1dB P3dB f (MHz) Watts dBm Watts dBm 2110 38 45.8 44 46.4 2140 37 45.7 44 46.4 2170 37 45.7 44 46.4 Test Impedances per Compression Level f (MHz) Zsource Ω Zload Ω 2110 P1dB 65.6 + j43.6 7.09 -- j14.1 2140 P1dB 58.7 + j39.7 6.88 -- j14.0 2170 P1dB 52.4 + j32.5 6.99 -- j14.5 Figure 13. Pulsed CW Output Power versus Input Power @ 28 V Note: Measurement made on a single path of the device under Class AB conditions. MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1 RF Device Data Freescale Semiconductor 11 PACKAGE DIMENSIONS MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1 12 RF Device Data Freescale Semiconductor MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1 RF Device Data Freescale Semiconductor 13 MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1 14 RF Device Data Freescale Semiconductor MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1 RF Device Data Freescale Semiconductor 15 MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1 16 RF Device Data Freescale Semiconductor MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1 RF Device Data Freescale Semiconductor 17 MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1 18 RF Device Data Freescale Semiconductor MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1 RF Device Data Freescale Semiconductor 19 MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1 20 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages • AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Dec. 2010 Description • Initial Release of Data Sheet MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1 RF Device Data Freescale Semiconductor 21 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1--8--1, Shimo--Meguro, Meguro--ku, Tokyo 153--0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010. All rights reserved. MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1 Document Number: MD7IC2250N Rev. 0, 12/2010 22 RF Device Data Freescale Semiconductor Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Freescale Semiconductor: MD7IC2250GNR1 MD7IC2250NBR1 MD7IC2250NR1
MD7IC2250NBR1 价格&库存

很抱歉,暂时无法提供与“MD7IC2250NBR1”相匹配的价格&库存,您可以联系我们找货

免费人工找货