Freescale Semiconductor
Technical Data
Document Number: MD7IC2250N
Rev. 0, 12/2010
RF LDMOS Wideband Integrated
Power Amplifiers
The MD7IC2250N wideband integrated circuit is designed with on--chip
matching that makes it usable from 2000 to 2200 MHz. This multi--stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular
base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts,
IDQ1(A+B) = 80 mA, IDQ2(A+B) = 520 mA, Pout = 5.3 Watts Avg.,
IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
PAE
(%)
ACPR
(dBc)
2110 MHz
31.2
17.0
--48.3
2140 MHz
31.1
16.8
--49.3
2170 MHz
31.1
16.8
--50.1
MD7IC2250NR1
MD7IC2250GNR1
MD7IC2250NBR1
2110--2170 MHz, 5.3 W AVG., 28 V
SINGLE W--CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1618--02
TO--270 WB--14
PLASTIC
MD7IC2250NR1
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 63 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 1 dB Compression Point ≃ 54 Watts CW
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• On--Chip Matching (50 Ohm Input, DC Blocked)
• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
• Integrated ESD Protection
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
CASE 1621--02
TO--270 WB--14 GULL
PLASTIC
MD7IC2250GNR1
CASE 1617--02
TO--272 WB--14
PLASTIC
MD7IC2250NBR1
VDS1A
RFinA
RFout1/VDS2A
VGS1A
Quiescent Current
Temperature Compensation (1)
VGS2A
VGS1B
Quiescent Current
Temperature Compensation (1)
VGS2B
RFinB
RFout2/VDS2B
VDS1A
VGS2A
VGS1A
RFinA
NC
NC
NC
NC
RFinB
VGS1B
VGS2B
VDS1B
1
2
3
4
5
6
7
8
9
10
11
12
14
13
RFout1/VDS2A
RFout2/VDS2B
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
VDS1B
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--0.5, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Input Power
Pin
28
dBm
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 74°C, 5.3 W CW, 2170 MHz
Stage 1, 28 Vdc, IDQ1(A+B) = 80 mA
Stage 2, 28 Vdc, IDQ2(A+B) = 520 mA
Case Temperature 80°C, 50 W CW, 2170 MHz
Stage 1, 28 Vdc, IDQ1(A+B) = 80 mA
Stage 2, 28 Vdc, IDQ2(A+B) = 520 mA
RθJC
°C/W
5.3
1.1
5.0
0.95
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1A (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
II (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage (4)
(VDS = 10 Vdc, ID = 23 μAdc)
VGS(th)
1.2
2.0
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1(A+B) = 80 mA)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ1(A+B) = 80 mA, Measured in Functional Test)
VGG(Q)
6.0
7.0
8.0
Vdc
Characteristic
Stage 1 -- Off Characteristics
(4)
Stage 1 -- On Characteristics
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage (1)
(VDS = 10 Vdc, ID = 150 μAdc)
VGS(th)
1.2
2.0
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ2(A+B) = 520 mA)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ2(A+B) = 520 mA, Measured in Functional Test)
VGG(Q)
5.5
6.3
7.5
Vdc
Drain--Source On--Voltage (1)
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
0.1
0.24
1.2
Vdc
Stage 2 -- Off Characteristics (1)
Stage 2 -- On Characteristics
Functional Tests (2,3) (In Freescale Wideband 2110--2170 Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1(A+B) = 80 mA,
IDQ2(A+B) = 520 mA, Pout = 5.3 W Avg., f = 2170 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
30.0
31.1
34.0
dB
Power Added Efficiency
PAE
15.0
16.8
—
%
ACPR
—
--50.1
--47.0
dBc
IRL
—
--14
--9
dB
Adjacent Channel Power Ratio
Input Return Loss
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1(A+B) = 80 mA, IDQ2(A+B) = 520 mA,
Pout = 5.3 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
PAE
(%)
ACPR
(dBc)
IRL
(dB)
2110 MHz
31.2
17.0
--48.3
--9
2140 MHz
31.1
16.8
--49.3
--11
2170 MHz
31.1
16.8
--50.1
--14
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in straight lead configuration before any lead forming operation is applied.
(continued)
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
RF Device Data
Freescale Semiconductor
3
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1(A+B) = 80 mA, IDQ2(A+B) = 520 mA,
2110--2170 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
IMD Symmetry @ 50 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
Quiescent Current Accuracy over Temperature (1,2)
with 4.7 kΩ Gate Feed Resistors (--30 to 85°C)
Stage 1
Stage 2
∆IQT
—
54
—
W
MHz
—
16
—
—
70
—
—
—
1.5
5.0
—
—
MHz
%
Gain Flatness in 60 MHz Bandwidth @ Pout = 5.3 W Avg.
GF
—
0.1
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.028
—
dB/°C
∆P1dB
—
0.028
—
dB/°C
Output Power Variation over Temperature
(--30°C to +85°C)
1. Each side of device measured separately.
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.Select Documentation/Application Notes -- AN1977 or
AN1987.
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
4
RF Device Data
Freescale Semiconductor
VD1A
VG2A
VG1A
VD2
C7
R2
C12 C5
C1
C14
C3
R1
C18
C9
CUT OUT AREA
C16
C20
C17
C21
C11
C10
MD7IC2250N
Rev. 2
C19
R3
VG1B
C4
C13 C6
C2
R4
C15
VD2
C8
VG2B
VD1B
Figure 3. MD7IC2250NR1(GNR1)(NBR1) Test Circuit Component Layout
Table 6. MD7IC2250NR1(GNR1)(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4
10 μF Chip Capacitors
GRM55DR61H106KA88L
Murata
C5, C6, C7, C8
5.6 pF Chip Capacitors
ATC600F5R6BT250XT
ATC
C9, C10
2.0 pF Chip Capacitors
ATC600F2R0BT250XT
ATC
C11
33 pF Chip Capacitor
ATC600F330JT250XT
ATC
C12, C13
1.0 μF Chip Capacitors
GRM31MR71H105KA88L
Murata
C14, C15, C16, C17, C18, C19
4.7 μF Chip Capacitors
GRM31CR71H475KA12L
Murata
C20
1.8 pF Chip Capacitor
ATC600F1R8BT250XT
ATC
C21
1.5 pF Chip Capacitor
ATC100B1R5BT500XT
ATC
R1, R2, R3, R4
4.7 kΩ Chip Resistors
CRCW12064K70FKEA
Vishay
PCB
0.020″, εr = 3.5
RF35A2
Taconic
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
RF Device Data
Freescale Semiconductor
5
Single--ended
λ
4
λ
Quadrature combined
4
λ
4
λ
λ
2
2
Doherty
Push--pull
Figure 4. Possible Circuit Topologies
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
6
RF Device Data
Freescale Semiconductor
31.4
16.6
Gps
16.4
16.2
PAE
31.3
16
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
31.2
31.1
--47
--5
--48
--9
--49
31
30.9 ACPR
--50
30.8
--51
IRL
30.7
2060
2080
2100
2120
2140
2160
2180
2200
--52
2220
--13
--17
--21
--25
IRL, INPUT RETURN LOSS (dB)
31.5
Gps, POWER GAIN (dB)
16.8
VDD = 28 Vdc, Pout = 5.3 W (Avg.), IDQ1(A+B) = 80 mA
IDQ2(A+B) = 520 mA
31.6
ACPR (dBc)
31.7
PAE, POWER ADDED
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 5. Power Gain, Power Added Efficiency, IRL and ACPR
Broadband Performance @ Pout = 5.3 Watts Avg.
--10
VDD = 28 Vdc, Pout = 50 W (PEP), IDQ1(A+B) = 80 mA
IDQ2(A+B) = 520 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
--20
IM3--U
--30
IM3--L
IM5--L
--40
IM5--U
IM7--L
IM7--U
--50
--60
1
10
100
TWO--TONE SPACING (MHz)
32.5
0
32
31.5
31
30.5
30
Gps
--1
40
30
--1 dB = 13 W
--3
10
--3 dB = 24 W
ACPR
5
20
PARC
PAE
--4
--5
50
--2 dB = 18 W
--2
0
10
15
20
25
--20
60
VDD = 28 Vdc, IDQ1(A+B) = 80 mA, IDQ2(A+B) = 520 mA
f = 2140 MHz, Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
--25
--30
--35
ACPR (dBc)
1
PAE, POWER ADDED EFFICIENCY (%)
33
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 6. Intermodulation Distortion Products
versus Two--Tone Spacing
--40
--45
--50
30
Pout, OUTPUT POWER (WATTS)
Figure 7. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
60
32
30
2170 MHz
ACPR
2140 MHz 2110 MHz
28
40
20
Gps
10
0
100
24
1
50
30
2170 MHz
2140 MHz
2110 MHz
26
PAE
0
PAE, POWER ADDED EFFICIENCY (%)
Gps, POWER GAIN (dB)
VDD = 28 Vdc, IDQ1(A+B) = 80 mA, IDQ2(A+B) = 520 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
34 Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
10
--10
--20
--30
--40
ACPR (dBc)
36
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. Single--Carrier W--CDMA Power Gain, Power
Added Efficiency and ACPR versus Output Power
10
40
0
Gain
30
--10
25
--20
VDD = 28 Vdc
Pin = 0 dBm
IDQ1(A+B) = 80 mA
IDQ2(A+B) = 520 mA
20
15
10
1500
1650
1800
1950
IRL (dB)
GAIN (dB)
35
--30
IRL
--40
2100
2250
2400
2550
--50
2700
f, FREQUENCY (MHz)
Figure 9. Broadband Frequency Response
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
8
RF Device Data
Freescale Semiconductor
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
1
2
3
4
5
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
7
8
9
PEAK--TO--AVERAGE (dB)
Figure 10. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 11. Single--Carrier W--CDMA Spectrum
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
RF Device Data
Freescale Semiconductor
9
VDD = 28 Vdc, IDQ1(A+B) = 80 mA, IDQ2(A+B) = 520 mA, Pout = 5.3 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2060
17.0 + j4.49
5.12 -- j3.98
2080
17.2 + j4.94
5.07 -- j4.10
2100
17.4 + j5.41
5.00 -- j4.23
2120
17.7 + j5.88
4.90 -- j4.36
2140
17.9 + j6.36
4.76 -- j4.88
2160
18.2 + j6.84
4.59 -- j4.60
2180
18.4 + j7.33
4.38 -- j4.69
2200
18.7 + j7.84
4.15 -- j4.77
2220
19.0 + j8.35
3.91 -- j4.82
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
10
RF Device Data
Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ1A = 40 mA, IDQ2A = 260 mA, Pulsed CW,
10 μsec(on), 10% Duty Cycle
51
Ideal
50
Pout, OUTPUT POWER (dBm)
49
48
47
46
Actual
45
2170 MHz 2110 MHz
44
43
2170 MHz
42
2140 MHz
2140 MHz
2110 MHz
41
40
9
10
11
12
13
15
14
16
17
18
19
20
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
2110
38
45.8
44
46.4
2140
37
45.7
44
46.4
2170
37
45.7
44
46.4
Test Impedances per Compression Level
f
(MHz)
Zsource
Ω
Zload
Ω
2110
P1dB
65.6 + j43.6
7.09 -- j14.1
2140
P1dB
58.7 + j39.7
6.88 -- j14.0
2170
P1dB
52.4 + j32.5
6.99 -- j14.5
Figure 13. Pulsed CW Output Power
versus Input Power @ 28 V
Note: Measurement made on a single path of the device under Class AB conditions.
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
RF Device Data
Freescale Semiconductor
11
PACKAGE DIMENSIONS
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
12
RF Device Data
Freescale Semiconductor
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
RF Device Data
Freescale Semiconductor
13
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
14
RF Device Data
Freescale Semiconductor
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
RF Device Data
Freescale Semiconductor
15
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
16
RF Device Data
Freescale Semiconductor
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
RF Device Data
Freescale Semiconductor
17
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
18
RF Device Data
Freescale Semiconductor
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
RF Device Data
Freescale Semiconductor
19
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
20
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
• AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Dec. 2010
Description
• Initial Release of Data Sheet
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
RF Device Data
Freescale Semiconductor
21
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
1--800--521--6274 or +1--480--768--2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
www.freescale.com/support
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1--8--1, Shimo--Meguro, Meguro--ku,
Tokyo 153--0064
Japan
0120 191014 or +81 3 5437 9125
support.japan@freescale.com
Asia/Pacific:
Freescale Semiconductor China Ltd.
Exchange Building 23F
No. 118 Jianguo Road
Chaoyang District
Beijing 100022
China
+86 10 5879 8000
support.asia@freescale.com
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
1--800--441--2447 or +1--303--675--2140
Fax: +1--303--675--2150
LDCForFreescaleSemiconductor@hibbertgroup.com
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2010. All rights reserved.
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
Document Number: MD7IC2250N
Rev. 0, 12/2010
22
RF Device Data
Freescale Semiconductor
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Freescale Semiconductor:
MD7IC2250GNR1 MD7IC2250NBR1 MD7IC2250NR1
工商网监
湘ICP备2023018690号
