MD7P19130HR3

Freescale Semiconductor Technical Data Document Number: MD7P19130H Rev. 2, 8/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be u s e d i n C l a s s A B a n d C l a s s C f o r P C N -- P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1250 mA, Pout = 40 Watts Avg., f = 1987.5 MHz, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 20 dB Drain Efficiency — 30% Device Output Signal PAR — 6 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — --36 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 130 Watts CW Output Power • Pout @ 1 dB Compression Point ≃ 130 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MD7P19130HR3 MD7P19130HSR3 1930--1990 MHz, 40 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs CASE 465M--01, STYLE 1 NI--780--4 MD7P19130HR3 CASE 465H--02, STYLE 1 NI--780S--4 MD7P19130HSR3 RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 2 RFoutB/VDSB (Top View) Figure 1. Pin Connections Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg -- 65 to +150 °C TC 150 °C TJ 225 °C Case Operating Temperature Operating Junction Temperature (1,2) 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2008, 2010. All rights reserved. RF Device Data Freescale Semiconductor MD7P19130HR3 MD7P19130HSR3 1 Table 2. Thermal Characteristics Characteristic Value (1,2) Symbol Thermal Resistance, Junction to Case Case Temperature 80°C, 130 W CW Case Temperature 75°C, 40 W CW RθJC Unit °C/W 0.31 0.36 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1C (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 316 μAdc) VGS(th) 1.2 2 2.7 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1250 mAdc, Measured in Functional Test) VGS(Q) 1.9 2.7 3.4 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 3.16 Adc) VDS(on) 0.1 0.2 0.3 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.2 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 586 — pF Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 348 — pF Characteristic Off Characteristics (3) On Characteristics (3) Dynamic Characteristics (3,4) Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1250 mA, Pout = 40 W Avg., f = 1987.5 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 18.5 20 21.5 dB Drain Efficiency ηD 27 30 — % Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss PAR 5.6 6 — dB ACPR — --36 --32.5 dBc IRL — --16 --7 dB 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 3. Measurement made with device in single--ended configuration. 4. Part internally matched both on input and output. (continued) MD7P19130HR3 MD7P19130HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1250 mA, 1930--1990 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 130 — W Gain Flatness in 60 MHz Bandwidth @ Pout = 40 W Avg. GF — 0.3 — dB Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 130 W CW Φ — 0.5 — ° Delay — 2.3 — ns Part--to--Part Insertion Phase Variation @ Pout = 130 W CW, f = 1960 MHz, Six Sigma Window ∆Φ — 80 — ° Gain Variation over Temperature (--30°C to +85°C) ∆G — 0.016 — dB/°C ∆P1dB — 0.01 — dB/°C Average Group Delay @ Pout = 130 W CW, f = 1960 MHz Output Power Variation over Temperature (--30°C to +85°C) MD7P19130HR3 MD7P19130HSR3 RF Device Data Freescale Semiconductor 3 VBIAS B1 + + C2 C1 C3 C4 R1 C7 C6 RF INPUT Z8 Z9 Z10 Z13 Z15 Z16 Z2 Z3 Z4 Z5 C10 C11 C12 Z17 Z18 Z12 Z19 Z1 C8 Z14 Z11 Z7 VSUPPLY + + Z6 Z20 Z21 Z22 Z23 Z24 Z25 Z26 RF OUTPUT DUT C9 C5 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 0.582″ x 0.110″ Microstrip 0.140″ x 0.284″ Microstrip 0.066″ x 0.080″ Microstrip 0.127″ x 0.080″ Microstrip 0.042″ x 0.237″ Microstrip 0.095″ x 0.375″ Microstrip 0.330″ x 0.320″ Microstrip 0.438″ x 0.530″ Microstrip 0.311″ x 0.741″ Microstrip 0.025″ x 0.814″ Microstrip 0.049″ x 0.254″ Microstrip 0.078″ x 0.814″ Microstrip 0.134″ x 0.957″ Microstrip 0.150″ x 0.276″ Microstrip Z15 Z16 Z17 Z18 Z19 Z20 Z21 Z22 Z23 Z24 Z25 Z26 PCB 0.203″ x 0.957″ Microstrip 0.271″ x 0.930″ Microstrip 0.010″ x 0.540″ Microstrip 0.042″ x 0.205″ Microstrip 0.471″ x 0.080″ Microstrip 0.024″ x 0.241″ Microstrip 0.057″ x 0.349″ Microstrip 0.781″ x 0.311″ Microstrip 0.271″ x 0.080″ Microstrip 0.024″ x 0.095″ Microstrip 0.134″ x 0.190″ Microstrip 0.511″ x 0.080″ Microstrip Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.55 Figure 2. MD7P19130HR3(HSR3) Test Circuit Schematic Table 5. MD7P19130HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Short Ferrite Bead 2743019447 ROP50 Fair--Rite C1 47 μF, 50 V Electrolytic Capacitor 476KXM063M Illinois Cap. C2 100 μF, 50 V Electrolitic Capacitor T491C105K050AT Kemet C3 1.0 μF Chip Capacitor ATC100B102JT50XT ATC C4, C12 0.1 μF Chip Capacitors CDR33BX104AKYS Kemet C5, C9 11 pF Chip Capacitors ATC100B110JT500XT ATC C6 13 pF Chip Capacitor ATC100B130JT500XT ATC C7 8.2 pF Chip Capacitor ATC100B8R2JT500XT ATC C8 22 μF, 35 V Tantalum Capacitor T491C226K035AT Kemet C10 470 μF, 63 V Electrolytic Capacitor 477KXM063M Illinois Cap. C11 10 μF, 50 V Chip Capacitor GRM55DR61H106KA88B Murata R1 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay MD7P19130HR3 MD7P19130HSR3 4 RF Device Data Freescale Semiconductor C2 C10 C7 C6 R1 C3 C4 B1 C12 C1 C11 C8 C5 CUT OUT AREA C9 MD7P19130H/HS Rev. 2 Figure 3. MD7P19130HR3(HSR3) Test Circuit Component Layout Single--ended λ 4 λ Quadrature combined 4 λ 4 λ λ 2 2 Doherty Push--pull Figure 4. Possible Circuit Topologies MD7P19130HR3 MD7P19130HSR3 RF Device Data Freescale Semiconductor 5 32 Gps, POWER GAIN (dB) 21.5 21 20.5 Gps 20 26 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) 19.5 19 18.5 ACPR 18 17.5 1880 29 VDD = 28 Vdc, Pout = 40 W (Avg.) IDQ = 1250 mA, Single--Carrier W--CDMA --28 --4 --30 --8 --32 --34 --36 PARC 1900 IRL 1920 1940 1960 1980 2000 2020 --38 2040 --12 --16 --20 --24 0 --0.5 --1 --1.5 --2 PARC (dB) 35 IRL, INPUT RETURN LOSS (dB) 38 ηD 22 ACPR (dBc) 22.5 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS --2.5 f, FREQUENCY (MHz) Figure 5. Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 40 Watts Avg. 21.5 IDQ = 1875 mA Gps, POWER GAIN (dB) 20.5 1562.5 mA 19.5 1250 mA 18.5 937.5 mA 17.5 VDD = 28 Vdc, f = 1960 MHz CW Measurements 625 mA 16.5 10 1 200 100 Pout, OUTPUT POWER (WATTS) CW Figure 6. CW Power Gain versus Output Power 19 18.5 18 17.5 0 --1 Gps --1 dB = 33.42 W --2 dB = 49.63 W --2 ACPR --5 20 30 40 50 45 --25 35 30 VDD = 28 Vdc, IDQ = 1250 mA PARC f = 1960 MHz, Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) --4 --20 40 --3 dB = 69.20 W ηD --3 50 60 70 80 90 100 110 --30 --35 --40 25 --45 20 --50 120 ACPR (dBc) 19.5 OUTPUT COMPRESSION AT THE 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) 20 1 ηD, DRAIN EFFICIENCY (%) 20.5 Pout, OUTPUT POWER (WATTS) Figure 7. Output Peak--to--Average Ratio Compression (PARC) versus Output Power MD7P19130HR3 MD7P19130HSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 23 50 --10 85°C 40 85°C 17 VDD = 28 Vdc, IDQ = 1250 mA, f = 1960 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal 15 PAR = 7.5 dB @ 0.01% Probability (CCDF) 13 ACPR ηD 30 --40°C 25°C 10 85°C 11 1 20 10 100 --20 --30 --40 ACPR (dBc) Gps, POWER GAIN (dB) 25°C 25°C 19 0 ηD, DRAIN EFFICIENCY (%) TC = --40°C 21 60 --40°C Gps --50 0 200 --60 Pout, OUTPUT POWER (WATTS) AVG. Figure 8. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power S21 --5 S21 (dB) --15 12 S11 --20 8 VDD = 28 Vdc IDQ = 1250 mA 4 1650 1750 1850 S11 (dB) --10 16 MTTF (HOURS) 20 0 1550 109 0 24 108 107 --25 1950 2050 2150 2250 f, FREQUENCY (MHz) Figure 9. Broadband Frequency Response --30 2350 106 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 40 W Avg., and ηD = 30%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 10. MTTF versus Junction Temperature MD7P19130HR3 MD7P19130HSR3 RF Device Data Freescale Semiconductor 7 W--CDMA TEST SIGNAL 100 10 10 --10 --30 Input Signal 0.1 0.01 0 1 2 3 4 5 6 --40 --50 --60 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 3.84 MHz Channel BW --20 1 (dB) PROBABILITY (%) 0 +ACPR in 3.84 MHz Integrated BW --ACPR in 3.84 MHz Integrated BW --70 --80 7 8 9 PEAK--TO--AVERAGE (dB) Figure 11. CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal 10 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 12. Single--Carrier W--CDMA Spectrum MD7P19130HR3 MD7P19130HSR3 8 RF Device Data Freescale Semiconductor Zo = 10 Ω Zsource f = 1880 MHz f = 2040 MHz f = 2040 MHz Zload f = 1880 MHz VDD = 28 Vdc, IDQ = 1250 mA, Pout = 40 W Avg. f MHz Zsource Ω Zload Ω 1880 7.37 + j1.00 1.84 -- j3.56 1900 7.33 + j0.96 1.78 -- j3.37 1920 7.27 + j0.93 1.72 -- j3.17 1940 7.19 + j0.90 1.64 -- j2.98 1960 7.07 + j0.89 1.55 -- j2.79 1980 6.93 + j0.97 1.48 -- j2.55 2000 6.89 + j1.04 1.46 -- j2.36 2020 6.83 + j1.07 1.44 -- j2.20 2040 6.75 + j1.12 1.40 -- j2.02 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 13. Series Equivalent Source and Load Impedance MD7P19130HR3 MD7P19130HSR3 RF Device Data Freescale Semiconductor 9 Pout, OUTPUT POWER (dBm) ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 Ideal P3dB = 53.48 dBm (223 W) P1dB = 52.67 dBm (185 W) Actual VDD = 28 Vdc, IDQ = 1250 mA, Pulsed CW 10 μsec(on), 10% Duty Cycle, f = 1960 MHz 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level P1dB Zsource Ω Zload Ω 7.15 -- j1.86 0.84 -- j2.99 Figure 14. Pulsed CW Output Power versus Input Power @ 28 V MD7P19130HR3 MD7P19130HSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MD7P19130HR3 MD7P19130HSR3 RF Device Data Freescale Semiconductor 11 MD7P19130HR3 MD7P19130HSR3 12 RF Device Data Freescale Semiconductor MD7P19130HR3 MD7P19130HSR3 RF Device Data Freescale Semiconductor 13 MD7P19130HR3 MD7P19130HSR3 14 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 May 2008 • Initial Release of Data Sheet 1 Dec. 2008 • Corrected the pin order in Fig. 1, Pin Connections, to match the Mechanical Outline pin order, p. 1 2 Aug. 2010 • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13628, p. 1, 2 • Updated Fig. 14, CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal, to better represent production test signal, p. 8 • Updated Fig. 15, Single--Carrier W--CDMA Spectrum, to better represent production test signal, p. 8 • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 15 MD7P19130HR3 MD7P19130HSR3 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008, 2010. All rights reserved. MD7P19130HR3 MD7P19130HSR3 Document Number: MD7P19130H Rev. 2, 8/2010 16 RF Device Data Freescale Semiconductor