Freescale Semiconductor
Technical Data
Document Number: MDE6IC9120N
Rev. 0, 11/2009
RF LDMOS Wideband Integrated
Power Amplifiers
The MDE6IC9120N/GN wideband integrated circuit is designed with
on - chip matching that makes it usable from 920 to 960 MHz. This multi - stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulation formats.
• Typical Doherty Single - Carrier W - CDMA Performance: VDD = 28 Volts,
IDQ1A = IDQ1B = 90 mA, IDQ2A = 550 mA, VG2B = 1.6 Vdc, Pout = 25 Watts
Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
PAE
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz
32.5
38.4
6.6
- 39.0
940 MHz
32.0
38.0
6.7
- 40.4
960 MHz
31.3
37.7
7.0
- 39.6
MDE6IC9120NR1
MDE6IC9120GNR1
920 - 960 MHz, 25 W AVG., 28 V
SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1866 - 02
TO - 270 WBL - 16
PLASTIC
MDE6IC9120NR1
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 146 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
• Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to
120 Watts CW Pout
• Typical Pout @ 1 dB Compression Point ] 120 Watts CW
Features
• Production Tested in a Symmetrical Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance
Parameters and Common Source S - Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked)
• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
VGS1A
CARRIER (2)
RFinA
RFout1/VDS2A
VGS2A
Quiescent Current
Temperature Compensation (1)
VDS1A
VDS1B
VGS2B
PEAKING (2)
RFinB
RFout2/VDS2B
VGS1A
GND
RFinA
GND
GND
VGS2A
VDS1A
VDS1B
VGS2B
GND
GND
RFinB
GND
VGS1B
CASE 1867 - 02
TO - 270 WBL - 16 GULL
PLASTIC
MDE6IC9120GNR1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
16
15
RFout1/VDS2A
RFout2/VDS2B
(Top View)
VGS1B
Quiescent Current
Temperature Compensation (1)
Figure 1. Functional Block Diagram
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
2. Peaking and Carrier orientation is determined by the test fixture design.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MDE6IC9120NR1 MDE6IC9120GNR1
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +66
Vdc
Gate- Source Voltage
VGS
- 0.5, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Input Power
Pin
30
dBm
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Final Doherty Application
RθJC
Thermal Resistance, Junction to Case
Case Temperature 80°C, Pout = 30 W CW
Stage 1A, 27 Vdc, IDQ1A = 90 mA
Stage 1B, 27 Vdc, IDQ1B = 90 mA
Stage 2A, 27 Vdc, IDQ2A = 550 mA
Stage 2B, 27 Vdc, VG2B = 2.5 Vdc
°C/W
6.0
4.9
1.3
0.95
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
MDE6IC9120NR1 MDE6IC9120GNR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 20 μAdc)
VGS(th)
1
1.7
3
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1A = IDQ1B = 90 mA)
VGS(Q)
—
2.5
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ1A = IDQ1B = 90 mA, Measured in Functional Test)
VGG(Q)
7.4
8.1
8.8
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 160 μAdc)
VGS(th)
1
1.7
3
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ2A = 550 mA)
VGS(Q)
—
2.1
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ2A = 550 mA, Measured in Functional Test)
VGG(Q)
5.8
6.5
7.2
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 407 mA)
VDS(on)
0.15
0.3
0.8
Vdc
Characteristic
Stage 1 — Off Characteristics (1)
Stage 1 — On Characteristics (1)
Stage 2 — Off Characteristics (1)
Stage 2 — On Characteristics (1)
Functional Tests (2,3,4) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = IDQ1B = 90 mA, IDQ2A = 550 mA, VG2B =
1.6 Vdc, Pout = 25 W Avg., f = 940 MHz, Single- Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
30.0
32.0
36.0
dB
Power Added Efficiency
PAE
36.0
38.0
—
%
PAR
5.8
6.7
—
dB
ACPR
—
- 40.4
- 36.0
dBc
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Typical Broadband Performance (3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = IDQ1B = 90 mA, IDQ2A =
550 mA, VG2B = 1.6 Vdc, Pout = 25 W Avg., Single - Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset
1.
2.
3.
4.
Frequency
Gps
(dB)
PAE
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz
32.5
38.4
6.6
- 39.0
940 MHz
32.0
38.0
6.7
- 40.4
960 MHz
31.3
37.7
7.0
- 39.6
Each side of device measured separately.
Part internally matched both on input and output.
Measurement made with device in a Symmetrical Doherty configuration.
Measurement made with device in straight lead configuration before any lead forming operation is applied.
(continued)
MDE6IC9120NR1 MDE6IC9120GNR1
RF Device Data
Freescale Semiconductor
3
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Symbol
Characteristic
Min
Typ
Max
Unit
Typical Performances (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = IDQ1B = 90 mA, IDQ2A = 550 mA,
VG2B = 1.6 Vdc, 920 - 960 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
120
—
—
8
—
W
IMD Symmetry @ 90 W PEP, Pout where IMD Third Order
Intermodulation ` 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
50
—
MHz
ΔIQT
—
—
0.02
0.03
—
—
%
Gain Flatness in 40 MHz Bandwidth @ Pout = 25 W Avg.
GF
—
1.2
—
dB
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.04
—
dB/°C
ΔP1dB
—
0.02
—
dBm/°C
Quiescent Current Accuracy over Temperature (2)
with 4.3 kΩ Gate Feed Resistors ( - 30 to 85°C)
Output Power Variation over Temperature
( - 30°C to +85°C)
Stage 1
Stage 2
MHz
1. Measurement made with device in a Symmetrical Doherty configuration.
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or
AN1987.
MDE6IC9120NR1 MDE6IC9120GNR1
4
RF Device Data
Freescale Semiconductor
R3
MDE6IC9120N
Rev 2A
VG1 C3
C19
VD2
C13
C27
VG2
Coupler 1
C11
C6
C7
R1
C12
C10 C8
R6
VD1
C1
CUT OUT AREA
R5
C9 C5
VD1
C17
C21
C23
C25
C26
C24
C22
VG2
C2
C28
C18
C14
R4
VG1 C4
VD2
C20
Note: Component numbers C15, C16 and R2 are not used.
Figure 3. MDE6IC9120NR1(GNR1) Test Circuit Component Layout
Table 6. MDE6IC9120NR1(GNR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C5, C6, C7, C8
0.01 μF, 50 V Chip Capacitors
GCM2195C1H103JA16D
Murata
C3, C4, C9, C10, C11, C12
1.0 μF, 35 V Chip Capacitors
GRM32RR71H105KA01K
Murata
C13, C14, C27, C28
39.0 pF Chip Capacitors
ATC600F390JT250XT
ATC
C17, C18
10.0 μF, 35 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C19, C20
220 μF, 50 V Electrolytic Capacitors
EMVY500ADA221MJA0G
Nippon Chemi - Con
C21, C22
15.0 pF Chip Capacitors
ATC600F150GT250XT
ATC
C23, C24
1.6 pF Chip Capacitors
ATC600F1R6JT250XT
ATC
C25, C26
2.7 pF Chip Capacitors
ATC600F2R7JT250XT
ATC
Coupler 1
50 Ω, 3 dB Hybrid Coupler
GSC362- HYB0900
Soshin
R1
50 Ω, 10 W Termination
RFP - 060120A15Z50- 2
Anaren
R3, R4, R5, R6
4.3 KΩ, 1/4 W Chip Resistors
CRCW12064K30FKEA
Vishay
PCB
0.020″, εr = 3.50
RO4350B
Rogers
MDE6IC9120NR1 MDE6IC9120GNR1
RF Device Data
Freescale Semiconductor
5
Single−ended
l
4
l
4
l
2
Quadrature combined
l
4
Doherty
l
2
Push−pull
Figure 4. Possible Circuit Topologies
MDE6IC9120NR1 MDE6IC9120GNR1
6
RF Device Data
Freescale Semiconductor
35
VDD = 28 Vdc, Pout = 25 W (Avg.) 30
PAE
30
Gps
25
20
IDQ1A = IDQ1B = 90 mA, IDQ2A = 550 mA
VG2B = 1.6 Vdc, Single−Carrier W−CDMA, 3.84 MHz
Channel Bandwidth, Input Signal PAR = 7.5 dB
10
@ 0.01% Probability on CCDF
−30
20
PARC
15
−40
ACPR
10
800
825
850
875
900
925
950
0
−50
1000
975
−1
−2
PARC (dB)
40
PAE, POWER ADDED
EFFICIENCY (%)
40
ACPR (dBc)
Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS
−3
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 5. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 25 Watts Avg.
−10
VDD = 28 Vdc, Pout = 90 W (PEP), IDQ1A = IDQ1B = 90 mA
IDQ2A = 550 mA, VG2B = 1.6 Vdc, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
−20
IM3−U
−30
IM3−L
−40
IM5−U
IM5−L
−50
IM7−L
−60
IM7−U
−70
10
1
100
TWO−TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Two - Tone Spacing
35
30
25
20
0
PAE
50
ACPR
−1 dB = 33.01 W
−1
40
−2 dB = 50.78 W
−2
−3 dB = 67.13 W
Gps
−3
−4
−5
10
PARC
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% PARC
Probability on CCDF
20
30
40
50
60
70
80
−20
60
VDD = 28 Vdc, IDQ1A = IDQ1B = 90 mA, IDQ2A = 550 mA
VG2B = 1.6 Vdc, f = 940 MHz
90
30
20
10
0
−25
−30
−35
ACPR (dBc)
40
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
45
1
PAE, POWER ADDED EFFICIENCY (%)
50
−40
−45
−50
100
Pout, OUTPUT POWER (WATTS)
Figure 7. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
MDE6IC9120NR1 MDE6IC9120GNR1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
920 MHz
940 MHz
960 MHz
34
PAE
40
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB
@ 0.01% Probability
on CCDF
920 MHz
33
32
30
Gps
960 MHz
31
20
10
940 MHz
ACPR
30
50
940 MHz
960 MHz
−25
−30
−35
−40
−45
−50
0
100
10
1
PAE, POWER ADDED EFFICIENCY (%)
Gps, POWER GAIN (dB)
35
−20
60
VDD = 28 Vdc, IDQ1A = IDQ1B = 90 mA, IDQ2A = 550 mA
VG2B = 1.6 Vdc, Single−Carrier, W−CDMA
ACPR (dBc)
36
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. Single - Carrier W - CDMA Power Gain, Power Added
Efficiency and ACPR versus Output Power
5
40
Gain
35
0
−5
−10
25
VDD = 28 Vdc, Pin = 0 dBm
IDQ1A = IDQ1B = 90 mA
IDQ2A = 550 mA, VG2B = 1.6 Vdc
20
15
−15
IRL (dB)
GAIN (dB)
30
−20
−25
10
IRL
−30
5
0
600
700
800
1000
900
1100
−35
1200
f, FREQUENCY (MHz)
Figure 9. Broadband Frequency Response
W - CDMA TEST SIGNAL
100
10
0
−10
Input Signal
−30
0.1
0.01
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
0
1
2
3
4
5
6
−50
+ACPR in 3.84 MHz
Integrated BW
−ACPR in 3.84 MHz
Integrated BW
−70
−80
7
8
9
Figure 10. CCDF W - CDMA IQ Magnitude
Clipping, Single - Carrier Test Signal
MDE6IC9120NR1 MDE6IC9120GNR1
−40
−60
PEAK−TO−AVERAGE (dB)
8
3.84 MHz
Channel BW
−20
1
(dB)
PROBABILITY (%)
10
10
−90
−100
−9
−7.2 −5.4 −3.6 −1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 11. Single - Carrier W - CDMA Spectrum
RF Device Data
Freescale Semiconductor
VDD = 28 Vdc, IDQ1A = IDQB = 90 mA, IDQ2A = 550 mA, VG2B = 1.6 Vdc, Pout = 25 W Avg.
f
MHz
Zin
W
Zload
W
820
56.02 - j0.10
3.61 + j1.78
840
57.03 - j2.95
3.11 + j1.50
860
57.27 - j6.01
2.65 + j1.56
880
57.45 - j8.80
2.28 + j1.81
900
57.56 - j12.21
2.07 + j2.11
920
56.66 - j15.98
1.87 + j2.40
940
55.81 - j19.90
1.77 + j2.64
960
53.45 - j23.91
1.75 + j2.89
980
51.34 - j27.40
1.58 + j3.12
Note: Measured with Peaking side open.
Zin
=
Device input impedance as measured from
gate to ground.
Zload =
Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under Test
Z
Z
in
load
Figure 12. Series Equivalent Input and Load Impedance — Carrier Side
VDD = 28 Vdc, IDQ1A = IDQB = 90 mA, IDQ2A = 550 mA, VG2B = 1.6 Vdc, Pout = 25 W Avg.
f
MHz
Zin
W
Zload
W
820
56.02 - j0.10
2.56 - j3.47
840
57.03 - j2.95
2.36 - j2.95
860
57.27 - j6.01
2.15 - j2.39
880
57.45 - j8.80
2.02 - j1.85
900
57.56 - j12.21
1.90 - j1.32
920
56.66 - j15.98
1.72 - j0.85
940
55.81 - j19.90
1.60 - j0.39
960
53.45 - j23.91
1.47 + j0.12
980
51.34 - j27.40
1.30 + j0.66
Note: Measured with Carrier side open.
Zin
=
Device input impedance as measured from
gate to ground.
Zload =
Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under Test
Z
in
Z
load
Figure 13. Series Equivalent Input and Load Impedance — Peaking Side
MDE6IC9120NR1 MDE6IC9120GNR1
RF Device Data
Freescale Semiconductor
9
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ1A = 90 mA, IDQ2A = 550 mA,
Pulsed CW, 10 μsec(on), 10% Duty Cycle
56
Pout, OUTPUT POWER (dBm)
55
Ideal
54
53
52
920 MHz
51
Actual
50
920 MHz
49
940 MHz
48
960 MHz
940 MHz
960 MHz
47
46
45
9
10
11
12
14
13
15
16
18
17
19
20
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
920
98.4
49.9
123
50.9
940
98.9
50.0
123
50.9
960
95.5
49.8
118
50.7
Test Impedances per Compression Level
f
(MHz)
Zsource
Ω
Zload
Ω
920
P1dB
49.53 - j0.96
1.59 - j0.84
940
P1dB
48.85 - j0.63
1.75 - j0.53
960
P1dB
51.26 - j0.82
1.72 - j0.33
Figure 14. Pulsed CW Output Power
versus Input Power @ 28 V
NOTE: Measurement made on the Class AB, carrier side of the device.
MDE6IC9120NR1 MDE6IC9120GNR1
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MDE6IC9120NR1 MDE6IC9120GNR1
RF Device Data
Freescale Semiconductor
11
MDE6IC9120NR1 MDE6IC9120GNR1
12
RF Device Data
Freescale Semiconductor
MDE6IC9120NR1 MDE6IC9120GNR1
RF Device Data
Freescale Semiconductor
13
MDE6IC9120NR1 MDE6IC9120GNR1
14
RF Device Data
Freescale Semiconductor
MDE6IC9120NR1 MDE6IC9120GNR1
RF Device Data
Freescale Semiconductor
15
MDE6IC9120NR1 MDE6IC9120GNR1
16
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
• AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Nov. 2009
Description
• Initial Release of Data Sheet
MDE6IC9120NR1 MDE6IC9120GNR1
RF Device Data
Freescale Semiconductor
17
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MDE6IC9120NR1 MDE6IC9120GNR1
Document Number: MDE6IC9120N
Rev. 0, 11/2009
18
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