MHT1108NT1

NXP Semiconductors Technical Data Document Number: MHT1108N Rev. 0, 03/2017 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 12.5 W CW high efficiency RF power transistor is designed for consumer and commercial cooking applications operating in the 2450 MHz ISM band. MHT1108N Typical Performance: VDD = 28 Vdc, IDQ = 110 mA Frequency (MHz) Signal Type Gps (dB) PAE (%) Pout (W) 2400 CW 18.5 55.7 12.5 2450 18.6 56.3 12.5 2500 18.1 54.2 12.5 Result 2450 MHz, 12.5 W CW, 28 V RF POWER LDMOS TRANSISTOR FOR CONSUMER AND COMMERCIAL COOKING Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR Pin (dBm) Test Voltage 2450 CW > 10:1 at all Phase Angles 26 (3 dB Overdrive) 32 No Device Degradation DFN 4 × 6 PLASTIC Features • Characterized with series equivalent large--signal impedance parameters and common source S--parameters • Qualified for operation at 32 Vdc • Integrated ESD protection • 150°C case operating temperature • 150°C die temperature capability Target Applications • Consumer cooking as PA driver • Commercial cooking as PA driver N.C. 2 16 N.C. 15 N.C. Gate 3 14 Drain Gate 4 13 Drain Gate 5 12 Drain Gate 6 11 Drain N.C. 7 N.C. 8 10 N.C. 9 N.C. N.C. 1 (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections © 2017 NXP B.V. RF Device Data NXP Semiconductors MHT1108N 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS –0.5, +65 Vdc Gate--Source Voltage VGS –6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg –65 to +150 °C TC –40 to +150 °C Case Operating Temperature Range Operating Junction Temperature Range (1,2) Total Device Dissipation @ TC = 25°C Derate above 25°C TJ –40 to +150 °C PD 32.9 0.26 W W/°C Symbol Value (2,3) Unit RθJC 3.8 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 97°C, 12.6 W CW, 28 Vdc, IDQ = 110 mA, 2450 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1C, passes 1000 V Charge Device Model (per JESD22--C101) C3, passes 1000 V Table 4. Moisture Sensitivity Level (MSL) Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 14.3 μAdc) VGS(th) 0.8 1.2 1.6 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 90 mAdc) VGS(Q) — 1.8 — Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 143 mAdc) VDS(on) 0.1 0.2 0.3 Vdc Characteristic Off Characteristics On Characteristics 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.nxp.com/RF/calculators. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. MHT1108N 2 RF Device Data NXP Semiconductors Table 6. Typical Performance In NXP Reference Circuit, 50 ohm system, VDD = 28 Vdc, IDQ = 110 mA Frequency Gps (dB) PAE (%) Pout (W) 2400 MHz 18.5 55.7 12.5 2450 MHz 18.6 56.3 12.5 2500 MHz 18.1 54.2 12.5 Test Voltage, VDD Result 32 No Device Degradation Table 7. Load Mismatch/Ruggedness In NXP Reference Circuit, 50 ohm system, IDQ = 110 mA Frequency (MHz) Signal Type VSWR Pin (dBm) 2450 CW >10:1 at all Phase Angles 26 (3 dB Overdrive) Table 8. Ordering Information Device MHT1108NT1 Tape and Reel Information T1 Suffix = 1,000 Units, 16 mm Tape Width, 7--inch Reel Package DFN 4 × 6 MHT1108N RF Device Data NXP Semiconductors 3 TYPICAL CHARACTERISTICS 108 VDD = 28 Vdc ID = 0.7 Amps MTTF (HOURS) 107 0.8 Amps 106 105 1.0 Amps 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) Note: MTTF value represents the total cumulative operating time under indicated test conditions. MTTF calculator available at http://www.nxp.com/RF/calculators. Figure 2. MTTF versus Junction Temperature – CW MHT1108N 4 RF Device Data NXP Semiconductors Table 9. Load Pull Performance — Maximum Power Tuning VDD = 28 Vdc, IDQ = 110 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle Max Output Power P1dB f (MHz) Zsource (Ω) Zin (Ω) 2400 1.13 – j2.48 0.77 + j2.04 2450 1.03 – j2.77 0.74 + j2.24 2500 1.02 – j2.93 0.84 + j2.47 Zload (Ω) (1) Gain (dB) (dBm) (W) ηD (%) PAE (%) 5.21 + j1.81 19.6 42.2 17 60.0 59.5 5.37 + j1.51 19.1 42.2 16 58.4 57.7 5.02 + j1.34 19.1 42.1 16 58.0 57.3 Max Output Power P3dB f (MHz) Zsource (Ω) Zin (Ω) Zload (2) (Ω) Gain (dB) (dBm) (W) ηD (%) PAE (%) 2400 1.13 – j2.48 0.75 + j2.25 6.22 + j1.32 17.3 43.0 20 59.4 58.4 2450 1.03 – j2.77 0.71 + j2.43 6.08 + j1.21 16.9 42.9 19 58.6 57.2 2500 1.02 – j2.93 0.84 + j2.68 5.76 + j0.92 16.9 42.8 19 57.8 56.6 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 10. Load Pull Performance — Maximum Efficiency Tuning VDD = 28 Vdc, IDQ = 110 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle Max Efficiency P1dB f (MHz) Zsource (Ω) Zin (Ω) Zload (1) (Ω) Gain (dB) (dBm) (W) ηD (%) PAE (%) 2400 1.13 – j2.48 0.65 + j2.01 3.94 + j3.57 20.9 41.5 14 65.8 65.2 2450 1.03 – j2.77 0.63 + j2.20 3.84 + j3.50 20.5 41.3 14 64.4 63.8 2500 1.02 – j2.93 0.70 + j2.42 3.32 + j3.15 20.6 41.1 13 63.5 63.0 Max Efficiency P3dB Gain (dB) (dBm) (W) ηD (%) PAE (%) 4.12 + j3.59 18.9 42.1 16 65.6 64.7 0.62 + j2.37 4.24 + j3.10 18.1 42.2 17 63.9 63.0 0.73 + j2.63 4.05 + j3.04 18.4 42.0 16 63.2 62.9 f (MHz) Zsource (Ω) Zin (Ω) 2400 1.13 – j2.48 0.63 + j2.19 2450 1.03 – j2.77 2500 1.02 – j2.93 Zload (Ω) (2) (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload MHT1108N RF Device Data NXP Semiconductors 5 P3dB – TYPICAL LOAD PULL CONTOURS — 2450 MHz 40 IMAGINARY (Ω) 4 5 41 4 41.5 3 E 42 2 P 1 42 0 41 –1 –2 IMAGINARY (Ω) 5 41.5 4 6 12 8 10 REAL (Ω) 60 2 58 1 14 –2 16 19.5 54 52 50 48 6 8 10 REAL (Ω) 12 14 16 Figure 4. P3dB Load Pull PAE Contours (%) 19 4 IMAGINARY (Ω) 4 2 Figure 3. P3dB Load Pull Output Power Contours (dBm) 5 46 P 56 –1 40 2 E 0 42.5 42 62 3 18.5 E 3 18 17.5 2 17 16.5 P 1 16 15.5 0 –1 –2 2 4 6 8 10 REAL (Ω) 12 14 16 Figure 5. P3dB Load Pull Gain Contours (dB) NOTE: P = Maximum Output Power E = Maximum Power Added Efficiency Gain Power Added Efficiency Output Power MHT1108N 6 RF Device Data NXP Semiconductors 2450 MHz REFERENCE CIRCUIT — 3″ × 5″ (7.6 cm × 12.7 cm) C6 C4 C9 C7 C3 C1 C14 C2 C12 R1 Q1 C11 C5 C13 MHT1108N Rev. 0 C8 D79996 C10 Figure 6. MHT1108N Reference Circuit Component Layout — 2450 MHz Table 11. MHT1108N Reference Circuit Component Designations and Values — 2450 MHz Part Description Part Number Manufacturer C1, C2, C3, C4, C5 6.2 pF Chip Capacitor ATC100B6R2FW1500XT ATC C6, C7, C8 10 μF Chip Capacitor C5750X7S2A106M TDK C9, C10 220 μF, 50 V Electrolytic Capacitor 227CKS050M Illinois Capacitor C11 0.6 pF Chip Capacitor ATC100B0R6FW1500XT ATC C12, C13 1.0 pF Chip Capacitor ATC100B1R3FW1500XT ATC C14 0.3 pF Chip Capacitor ATC100B0R3FW1500XT ATC Q1 RF Power LDMOS Transistor MHT1108N NXP Semiconductors R1 4.7 Ω, 1/4 W Chip Resistor CRCW12064R70FKEA Vishay PCB Rogers RO4350B, 0.020″, εr = 3.66 D79996 MTL MHT1108N RF Device Data NXP Semiconductors 7 Gps, POWER GAIN (dB) 18.00 65 VDD = 28 Vdc Pin = 24 dBm IDQ = 110 mA 60 PAE 17.75 55 Gps 17.50 50 15 17.25 Pout 17.00 14 13 16.75 16.50 2400 2420 2440 2460 12 2500 2480 Pout, OUTPUT POWER (WATTS) 18.25 PAE, POWER ADDED EFFICIENCY (%) TYPICAL CHARACTERISTICS — 2450 MHz REFERENCE CIRCUIT f, FREQUENCY (MHz) Figure 7. Power Gain, Power Added Efficiency and Output Power versus Frequency at a Constant Input Power 16 Pout, OUTPUT POWER (WATTS) 14 Pin =24 dBm 12 10 Pin =21 dBm 8 6 4 2 0 0.0 f = 2450 MHz, VDD = 28 Vdc 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 VGS, GATE--SOURCE VOLTAGE (VOLTS) VDD = 28 Vdc IDQ = 50 mA Gps, POWER GAIN (dB) 20 2500 MHz 2450 MHz 17 2450 MHz 2500 MHz PAE 19 18 65 2400 MHz 35 20 Gps 5 2400 MHz 30 16 15 2500 MHz 2450 MHz Pin 14 12 0 2 4 25 20 2400 MHz 13 6 8 10 50 12 14 15 16 Pin, INPUT POWER (dBm) 21 PAE, POWER ADDED EFFICIENCY (%) Figure 8. Output Power versus Gate--Source Voltage 10 18 Pout, OUTPUT POWER (WATTS) Figure 9. Power Gain, Power Added Efficiency and Input Power versus Output Power and Frequency MHT1108N 8 RF Device Data NXP Semiconductors VDD = 28 Vdc 20 IDQ = 50 mA f = 2450 MHz 19 65 25_C PAE 50 125_C 85_C 18 85_C 17 125_C 16 125_C 15 14 20 Gps 25_C 85_C 35 5 30 25_C 25 20 Pin 15 13 12 0 2 4 6 8 10 12 14 16 Pin, INPUT POWER (dBm) Gps, POWER GAIN (dB) 21 PAE, POWER ADDED EFFICIENCY (%) TYPICAL CHARACTERISTICS — 2450 MHz REFERENCE CIRCUIT 10 18 Pout, OUTPUT POWER (WATTS) Figure 10. Power Gain, Power Added Efficiency and Input Power versus Output Power and Temperature MHT1108N RF Device Data NXP Semiconductors 9 2.00 5.35 × 2.0 solder pad with thermal via structure. All dimensions in mm. 3.00 5.35 0.56 0.35 10 × 0.80 4 × 0.65 Figure 11. PCB Pad Layout for 16--Lead DFN 4 × 6 MHT1108N WLYW Figure 12. Product Marking MHT1108N 10 RF Device Data NXP Semiconductors PACKAGE DIMENSIONS MHT1108N RF Device Data NXP Semiconductors 11 MHT1108N 12 RF Device Data NXP Semiconductors MHT1108N RF Device Data NXP Semiconductors 13 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the resources to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model Development Tools • Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.nxp.com/RF 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Mar. 2017 Description • Initial Release of Data Sheet MHT1108N 14 RF Device Data NXP Semiconductors How to Reach Us: Home Page: nxp.com Web Support: nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. NXP does not convey any license under its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/SalesTermsandConditions. NXP, the NXP logo, Freescale, and the Freescale logo are trademarks of NXP B.V. All other product or service names are the property of their respective owners. E 2017 NXP B.V. MHT1108N Document Number: RF Device Data MHT1108N Rev. 0,Semiconductors 03/2017 NXP 15