Freescale Semiconductor
Technical Data
Document Number: MHVIC915NR2
Rev. 9, 5/2006
RF LDMOS Wideband Integrated
Power Amplifier
The MHVIC915NR2 wideband integrated circuit is designed with on - chip
matching that makes it usable from 750 to 1000 MHz. This multi - stage
structure is rated for 26 to 28 Volt operation and covers all typical cellular base
station modulation formats.
Final Application
• Typical Single - Carrier N - CDMA Performance: VDD = 27 Volts, IDQ1 =
80 mA, IDQ2 = 120 mA, Pout = 34 dBm, Full Frequency Band (746 to
960 MHz), IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
Power Gain — 31 dB
Power Added Efficiency — 21%
ACPR @ 750 kHz Offset — - 50 dBc in 30 kHz Bandwidth
Driver Applications
• Typical Single - Carrier N - CDMA Performance: VDD = 27 Volts, IDQ1 = 80
mA, IDQ2 = 120 mA, Pout = 23 dBm, Full Frequency Band (869 894 MHz), IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13),
Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01%
Probability on CCDF.
Power Gain — 31 dB
Power Added Efficiency — 21%
ACPR @ 750 kHz Offset — - 60 dBc in 30 kHz Bandwidth
ACPR @ 1.98 MHz Offset — - 66 dBc in 30 kHz Bandwidth
• Typical GSM Performance: VDD = 26 Volts, Pout = 15 W P1dB, Full
Frequency Band (921 - 960 MHz)
Power Gain — 30 dB @ P1dB
Power Added Efficiency = 56% @ P1dB
• Capable of Handling 3:1 VSWR, @ 27 Vdc, 880 MHz, 15 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >9 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
• On - Chip Current Mirror gm Reference FET for Self Biasing Application (1)
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
MHVIC915NR2
746 - 960 MHz, 15 W, 27 V
SINGLE N - CDMA, GSM/GSM EDGE
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
16
1
CASE 978 - 03
PFP - 16
PLASTIC
VRD1
N.C.
1
16
N.C.
VRG1
VRD1
2
15
VDS2/RFout
VRG1
3
14
VDS2/RFout
VDS1
4
13
VDS2/RFout
GND
5
12
VDS2/RFout
RFin
6
11
VDS2/RFout
VGS1
VGS2
7
8
10
9
VDS2/RFout
N.C.
VDS1
2 Stage IC
RFin
VGS1
VGS2
VDS2/RFout
Quiescent Current
Temperature Compensation
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MHVIC915NR2
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain- Source Voltage
Rating
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, +15
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
150
°C
Symbol
Value (1)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
RθJC
°C/W
Driver Application
(Pout = 0.2 W CW)
Stage 1, 27 Vdc, IDQ = 80 mA
Stage 2, 27 Vdc, IDQ = 120 mA
15.1
5.1
Output Application
(Pout = 2.5 W CW)
Stage 1, 27 Vdc, IDQ = 80 mA
Stage 2, 27 Vdc, IDQ = 120 mA
15.8
5.0
GSM Application
(Pout = 15 W CW)
Stage 1, 26 Vdc, IDQ = 50 mA
Stage 2, 26 Vdc, IDQ = 140 mA
13.8
4.5
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
0 (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
II (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 27 Vdc, IDQ1 = 80 mA, IDQ2 = 120 mA, f = 880 MHz, Single - Carrier
N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Bandwidth @ ±750 MHz. PAR = 9.8 dB @ 0.01% Probability
on CCDF
Power Gain (Pout = 23 dBm)
Gps
29
Power Added Efficiency (Pout = 34 dBm)
PAE
Input Return Loss (Pout = 23 dBm)
IRL
Adjacent Channel Power Ratio (Pout = 23 dBm)
Adjacent Channel Power Ratio (Pout = 34 dBm)
Gain Flatness @ Pout = 23 dBm (865 MHz to 895 MHz)
Bias Sense FET Drain Current
VBSD = 27 V
VBIAS BSG = VBIAS2 Q2 @ IDQ2 = 120 mA
31
—
dB
—
21
—
%
—
- 12
-9
dB
ACPR
—
- 60
- 55
dBc
ACPR
—
- 50
—
dBc
GF
—
0.2
0.4
dB
IBSD
0.8
1.2
1.6
mA
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
MHVIC915NR2
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 οhm system) VDD = 27 Vdc, IDQ1 = 80 mA, IDQ2 = 120 mA, 865 - 895 MHz
Quiescent Current Accuracy over Temperature ( - 10 to 85°C) at Nominal Value (1)
Gain Flatness in 30 MHz Bandwidth @ Pout = 23 dBm (800 MHz to 960 MHz)
Deviation from Linear Phase in 30 MHz Bandwidth @ Pout = 23 dBm
Group Delay @ Pout = 23 dBm Including Output Matching
Part to Part Phase Variation @ Pout = 23 dBm
ΔIQT
—
±5
—
%
GF
—
0.20
—
dB
Φ
—
±0.2
—
°
Delay
—
2.2
—
ns
ΦΔ
—
±10
—
°
Typical GSM Performances (In Freescale GSM Test Fixture, 50 οhm system) VDD = 26 Vdc, IDQ1 = 50 mA, IDQ2 = 140 mA,
921- 960 MHz, CW
Output Power, 1 dB Compression Point
P1dB
—
15
—
W
Power Gain @ P1dB
Gps
—
30
—
dB
Power Added Efficiency @ P1dB
PAE
—
56
—
%
Input Return Loss @ P1dB
IRL
—
- 16
—
dB
Error Vector Magnitude @ 5 W
—
—
0.9
—
%
Intermodulation Distortion
(15 W PEP, 2 - Tone, 100 kHz Tone Spacing)
IMD
—
- 30
—
dBc
Power Added Efficiency (15 W PEP, 2 - Tone, 100 kHz Tone Spacing)
PAE
—
35
—
%
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes - AN1977.
MHVIC915NR2
RF Device Data
Freescale Semiconductor
3
VBSD
VBIAS BSG
R5
1 NC
Z11
2
15
3
14
4
13
5
12
6
11
VD1
C8
RF
INPUT
C7
NC 16
Z7
C4
+
C5
VD2
C6
Z6
Z1
7
VGS1
C13
Z12
8
Quiescent Current
Temperature Compensation
Z2
Z3
Z4
Z5
RF
OUTPUT
C1 C2
Z8
10
NC 9
C3
VBIAS1
R1
C11
R3
C12
Z9
Z10
VGS2
VBIAS2
R2
C10
Z1
Z2
Z3
Z4
Z5
Z6
R4
C9
0.0438″ x 0.400″ 50 Ω Microstrip
0.1709″ x 0.1004″ Microstrip
(not including IC pad length)
0.1222″ x 0.1944″ Microstrip
0.0836″ x 0.3561″ Microstrip
0.0438″ x 0.2725″ Microstrip
0.0504″ x 0.3378″ Microstrip
Z7
Z8
Z9
Z10
Z11
Z12
PCB
0.0504″ x 0.480″ Microstrip
0.0252″ x 0.843″ Microstrip
0.0252″ x 0.167″ Microstrip
0.040″ x 0.850″ Microstrip
0.025″ x 0.400″ Microstrip
0.020″ x 0.710″ Microstrip
Rogers 4350, 0.020″, εr = 3.50
Figure 3. MHVIC915NR2 Test Circuit Schematic
Table 6. MHVIC915NR2 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
4.7 pF High Q Capacitors (0603)
ATC600S4R7CW
ATC
C3, C4
47 pF NPO Capacitors (0805)
GRM40- 001COG470J050BD
Murata
C5, C8, C10, C11
1 μF X7R Chip Capacitors (1214)
GRM42- 2X7R105K050AL
Murata
C6
10 μF, 50 V Electrolytic Capacitor
ECEV1HA100SP
Panasonic
C7, C9, C12
0.01 μF X7R Chip Capacitors (0805)
GRM40X7R103J050BD
Murata
C13
8.2 pF NPO Chip Capacitor (0805)
GRM40- 001COG8R2C050BD
Murata
R1, R2, R5
1 kW Chip Resistors (0603)
RM73B2AT102J
KOA Speer
R3, R4
100 kW Chip Resistors (0603)
RM73B2AT104J
KOA Speer
MHVIC915NR2
4
RF Device Data
Freescale Semiconductor
MHVIC915
Rev 0
VBIAS BSG VBSD
VD1
VD2
R5
C6
C8
C4
C5
C7
C2
C1
C13
C3
C9
R4
C12
R3
C10
R2
C11
R1
VBIAS1
VBIAS2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These
changes will have no impact on form, fit or function of the current product.
Figure 4. MHVIC915NR2 Test Circuit Component Layout
MHVIC915NR2
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS (FREESCALE TEST FIXTURE, 50 OHM SYSTEM)
35
G ps , POWER GAIN (dB)
PAE, POWER ADDED EFFICIENCY (%)
50
34
TC = −30_C
33
32
25_C
31
30
29
85_C
28
VDD = 26 Vdc, IDQ1 = 50 mA,
IDQ2 = 140 mA, f = 880 MHz
27
26
0.1
1
25_C
45
85_C
40
35
30
25
20
15
10
VDD = 26 Vdc, IDQ1 = 50 mA,
IDQ2 = 140 mA, f = 880 MHz
5
0
100
10
0.1
1
Pout, OUTPUT POWER (WATTS)
Figure 5. Power Gain versus Output Power
Figure 6. Power Added Efficiency versus
Output Power
35
22
PAE, POWER ADDED EFFICIENCY (%)
TC = −30_C
G ps , POWER GAIN (dB)
34
33
25_C
32
31
VDD = 26 Vdc, Pout = 2.5 W
IDQ1 = 50 mA, IDQ2 = 140 mA
30
85_C
29
28
21.5
21
20.5
TC = −30_C
20
25_C
VDD = 26 Vdc, Pout = 2.5 W
IDQ1 = 50 mA, IDQ2 = 140 mA
19.5
750
800
850
900
950
1000
750
800
SPECTRAL REGROWTH @ 400 kHz (dBc)
1.1
TC = −30_C
1
0.9
25_C
0.8
85_C
0.7
0.6
VDD = 26 Vdc, IDQ1 = 50 mA,
IDQ2 = 140 mA, f = 880 MHz
0
1
2
3
1000
950
Figure 8. Power Added Efficiency versus
Frequency
1.2
0.4
900
f, FREQUENCY (MHz)
Figure 7. Power Gain versus Frequency
0.5
85_C
850
f, FREQUENCY (MHz)
EVM, ERROR VECTOR MAGNITUDE (%)
100
10
Pout, OUTPUT POWER (WATTS)
4
5
−60
−62
TC = −30_C
−64
25_C
−66
85_C
−68
−70
−72
−74
−76
VDD = 26 Vdc, IDQ1 = 50 mA,
IDQ2 = 140 mA, f = 880 MHz
−78
−80
6
0
1
2
3
4
5
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
Figure 9. Error Vector Magnitude versus
Output Power
Figure 10. Spectral Regrowth @ 400 kHz
versus Output Power
6
MHVIC915NR2
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS (FREESCALE TEST FIXTURE, 50 OHM SYSTEM)
IMD, INTERMODULATION DISTORTION (dBc)
SPECTRAL REGROWTH @ 600 kHz (dBc)
−76.5
TC = −30_C
−77
−77.5
25_C
−78
−78.5
85_C
−79
−79.5
−80
−80.5
VDD = 26 Vdc, IDQ1 = 50 mA,
IDQ2 = 140 mA, f = 880 MHz
−81
−81.5
0
1
2
3
4
−20
−25
−30
5th Order
−40
−45
7th Order
−50
−55
1
0.1
Pout, OUTPUT POWER (WATTS)
32
32
Pin = 1 mW
G ps , POWER GAIN (dB)
G ps , POWER GAIN (dB)
32.5
2 mW
29
28
3 mW
27
Pin = 0.275 mW
31.5
31
0.14 mW
0.07 mW
30.5
30
29.5
29
IDQ1 = 50 mA, IDQ2 = 140 mA
f = 880 MHz
26
IDQ1 = 50 mA, IDQ2 = 140 mA
f = 880 MHz
28.5
25
28
5
10
15
20
25
30
35
5
10
VDD, SUPPLY VOLTAGE (V)
15
20
25
30
35
VDD, SUPPLY VOLTAGE (V)
Figure 13. Power Gain versus Supply Voltage
Figure 14. Power Gain versus Supply Voltage
−5
−35
−10
VDD = 26 Vdc, IDQ1 = 50 mA,
IDQ2 = 140 mA, f = 880 MHz
N−CDMA IS−95 Pilot, Sync, Paging,
Traffic Codes 8 Through 13
−40
TC = −30_C
−15
ACPR (dBc)
IRL, INPUT RETURN LOSS (dB)
100
Figure 12. Two - Tone Broadband Performance
33
30
10
TONE SPACING (MHz)
Figure 11. Spectral Regrowth @ 600 kHz
versus Output Power
31
VDD = 26 Vdc, Pout = 7.5 W (Avg.)
IDQ1 = 50 mA, IDQ2 = 140 mA, f = 880 MHz
−35
6
5
3rd Order
25_C
−20
−45
TC = 85_C
−50
85_C
25_C
−25
−55
VDD = 26 Vdc, IDQ1 = 50 mA,
IDQ2 = 140 mA, f = 880 MHz
−30
0.1
1
10
−30_C
−60
100
0
1
2
3
4
5
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
Figure 15. Input Return Loss versus Output
Power
Figure 16. Adjacent Channel Power Ratio
versus Output Power
6
MHVIC915NR2
RF Device Data
Freescale Semiconductor
7
Zo = 50 Ω
Zload
f = 750 MHz
Zin
f = 960 MHz
f = 960 MHz
f = 750 MHz
VDD = 26 Vdc, IDQ1 = 50 mA, IDQ2 = 140 mA, Pout = 1.25 W CW
f
MHz
Zin
Ω
Zload
Ω
750
42.11 - j2.79
8.24 + j5.33
765
40.86 - j1.37
8.31 + j5.56
780
40.09 + j0.06
8.39 + j5.82
795
39.77 + j1.52
8.50 + j5.95
810
39.89 + j3.01
8.62 + j6.02
825
40.49 + j4.39
8.82 + j6.12
840
41.48 + j5.70
8.94 + j6.19
855
42.89 + j6.73
9.12 + j6.17
870
43.51 + j7.03
9.16 + j6.12
885
46.81 + j7.87
9.33 + j6.09
900
49.21 + j7.74
9.38 + j5.95
915
51.79 + j7.02
9.50 + j5.85
930
54.48 + j5.65
9.47 + j5.73
945
57.05 + j3.61
9.54 + j5.63
960
59.16 + j0.75
9.42 + j5.45
Zin
= Device input impedance as measured from
RF input to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Z
in
Z
load
Figure 17. Series Equivalent Input and Load Impedance
MHVIC915NR2
8
RF Device Data
Freescale Semiconductor
DRIVER/PRE- DRIVER PERFORMANCE
VBSD
VBIAS BSG
R5
1 NC
Z11
2
15
3
14
4
13
5
12
6
11
VD1
C8
RF
INPUT
C7
NC 16
Z7
C4
+
C5
VD2
C6
Z6
Z1
7
VGS1
C13
Z12
8
Quiescent Current
Temperature Compensation
Z2
Z3
Z4
Z5
RF
OUTPUT
C1 C2
Z8
10
NC 9
C3
VBIAS1
R1
C11
R3
C12
Z9
Z10
VGS2
VBIAS2
R2
C10
Z1
Z2
Z3
Z4
Z5
Z6
R4
C9
0.0438″ x 0.400″ 50 Ω Microstrip
0.1709″ x 0.1004″ Microstrip
(not including IC pad length)
0.1222″ x 0.1944″ Microstrip
0.0836″ x 0.3561″ Microstrip
0.0438″ x 0.2725″ Microstrip
0.0504″ x 0.3378″ Microstrip
Z7
Z8
Z9
Z10
Z11
Z12
PCB
0.0504″ x 0.480″ Microstrip
0.0252″ x 0.843″ Microstrip
0.0252″ x 0.167″ Microstrip
0.040″ x 0.850″ Microstrip
0.025″ x 0.400″ Microstrip
0.020″ x 0.710″ Microstrip
Rogers 4350, 0.020″, εr = 3.50
Figure 18. MHVIC915NR2 Test Fixture Schematic—
Alternate Characterization for Driver/Pre - Driver Performance
Table 7. MHVIC915NR2 Test Fixture Component Designations and Values —
Alternate Characterization for Driver/Pre - Driver Performance
Part
Description
Part Number
Manufacturer
C1, C2
2.4 pF High Q Capacitors (0603)
ATC600S4R7CW
ATC
C3, C4
47 pF NPO Capacitors (0805)
GRM40- 001COG470J050BD
Murata
C5, C8, C10, C11
1 μF X7R Chip Capacitors (1214)
GRM42- 2X7R105K050AL
Murata
C6
10 μF, 50 V Electrolytic Capacitor
ECEV1HA100SP
Panasonic
C7, C9, C12
0.01 μF X7R Chip Capacitors (0805)
GRM40X7R103J050BD
Murata
C13
8.2 pF NPO Chip Capacitor (0805)
GRM40- 001COG8R2C050BD
Murata
R1, R2, R5
1 kW Chip Resistors (0603)
RM73B2AT102J
KOA Speer
R3, R4
100 kW Chip Resistors (0603)
RM73B2AT104J
KOA Speer
MHVIC915NR2
RF Device Data
Freescale Semiconductor
9
DRIVER/PRE- DRIVER PERFORMANCE
MHVIC915
Rev 0
VBIAS BSG VBSD
VD1
VD2
R5
C6
C8
C4
C5
C7
C2
C1
C13
C3
C9
R4
C12
R3
C10
R2
C11
R1
VBIAS1
VBIAS2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These
changes will have no impact on form, fit or function of the current product.
Figure 19. MHVIC915NR2 Test Circuit Component Layout—
Alternate Characterization for Driver/Pre - Driver Performance
MHVIC915NR2
10
RF Device Data
Freescale Semiconductor
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
TYPICAL CHARACTERISTICS
DRIVER/PRE- DRIVER PERFORMANCE
−46
−48
−50
−52
VDD = 27 Vdc
IDQ1 = 120 mA, IDQ2 = 140 mA
f = 880 MHz
N−CDMA IS−95 Pilot, Sync, Paging,
Traffic Codes 8 Through 13
ACPR
−54
−56
−58
−60
−62
20
System Noise Floor
22
24
26
28
30
32
Pout, OUTPUT POWER (dBm)
Figure 20. Single - Carrier N - CDMA ACPR
versus Output Power
MHVIC915NR2
RF Device Data
Freescale Semiconductor
11
f = 750 MHz
f = 960 MHz
Zload
Zo = 50 Ω
f = 960 MHz
Zin
f = 750 MHz
VDD = 27 Vdc, IDQ1 = 120 mA, IDQ2 = 140 mA, Pout = 0.5 W CW
f
MHz
Zin
Ω
Zload
Ω
750
43.5 - j13.4
4.7 + j41.5
765
42.9 - j13.9
5.5 + j43.8
780
42.7 - j14.2
6.0 + j43.7
795
42.3 - j15.9
6.8 + j42.8
810
42.7 - j16.0
7.5 + j42.2
825
44.5 - j10.5
7.8 + j40.5
840
45.5 - j7.0
7.2 + j39.2
855
45.0 - j6.5
6.3 + j38.4
870
45.0 - j4.5
6.4 + j38.7
885
46.0 - j1.5
7.9 + j38.5
900
48.3 + j2.4
9.3 + j36.8
915
49.5 + j7.3
9.4 + j35.3
930
49.6 + j7.8
8.6 + j34.5
945
49.8 + j8.4
7.8 + j34.3
960
49.5 + j8.6
7.6 + j34.3
Zin
= Device input impedance as measured from
RF input to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Z
in
Z
load
Figure 21. Series Equivalent Input and Load Impedance —
Alternate Characterization for Driver/Pre - Driver Performance
MHVIC915NR2
12
RF Device Data
Freescale Semiconductor
NOTES
MHVIC915NR2
RF Device Data
Freescale Semiconductor
13
NOTES
MHVIC915NR2
14
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
h X 45 _
A
E2
1
14 x e
16
D
e/2
D1
8
9
E1
8X
bbb
M
B
BOTTOM VIEW
E
C B
S
ÉÉ
ÇÇÇ
ÇÇÇ
ÉÉ
b1
Y
c
A A2
c1
b
DATUM
PLANE
SEATING
PLANE
H
ccc C
q
W
GAUGE
PLANE
W
L
M
C A
SECT W - W
L1
C
aaa
A1
1.000
0.039
S
NOTES:
1. CONTROLLING DIMENSION: MILLIMETER.
2. DIMENSIONS AND TOLERANCES PER ASME
Y14.5M, 1994.
3. DATUM PLANE −H− IS LOCATED AT BOTTOM OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE BOTTOM OF THE PARTING LINE.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS
0.250 PER SIDE. DIMENSIONS D AND E1 DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
5. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE
b DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
DIM
A
A1
A2
D
D1
E
E1
E2
L
L1
b
b1
c
c1
e
h
q
aaa
bbb
ccc
MILLIMETERS
MIN
MAX
2.000
2.300
0.025
0.100
1.950
2.100
6.950
7.100
4.372
5.180
8.850
9.150
6.950
7.100
4.372
5.180
0.466
0.720
0.250 BSC
0.300
0.432
0.300
0.375
0.180
0.279
0.180
0.230
0.800 BSC
−−−
0.600
0_
7_
0.200
0.200
0.100
DETAIL Y
CASE 978 - 03
ISSUE C
PFP - 16
PLASTIC
MHVIC915NR2
RF Device Data
Freescale Semiconductor
15
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MHVIC915NR2
Document Number: MHVIC915NR2
Rev. 9, 5/2006
16
RF Device Data
Freescale Semiconductor
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