MHW8267AN

Freescale Semiconductor Technical Data Document Number: MHW8267AN Rev. 3, 5/2006 MHW8267AN Features • Specified for 79 - and 112 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built - in Input Diode Protection • GaAs FET Transistor Technology • Unconditionally Stable Under All Load Conditions • Output Port Ring Wave Protection Applications • CATV Systems Operating in the 47 to 870 MHz Frequency Range • Output Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems • Driver Amplifier in Linear General Purpose Applications Description • 24 Vdc Supply, 47 to 870 MHz, CATV GaAs Forward Power Doubler Amplifier Module • Replaced MHW8267A. There are no form, fit or function changes with this part replacement. • RoHS Compliant 870 MHz 27.6 dB GAIN 112 - CHANNEL GaAs CATV AMPLIFIER MODULE CASE 1302 - 01, STYLE 1 Table 1. Maximum Ratings Rating Symbol Value Unit RF Voltage Input (Single Tone) Vin +70 dBmV DC Supply Voltage VCC +26 Vdc Operating Case Temperature Range TC - 20 to +100 °C Storage Temperature Range Tstg - 40 to +100 °C Table 2. ESD Maximum Ratings Rating Input Value Output Value Unit 200 200 V 2 2 kV Surge Voltage per IEC 1000 - 4 - 5 Human Body Model per Mil. Std. 1686 Table 3. Electrical Characteristics (VCC = 24 Vdc, TC = +45°C, 75 Ω system unless otherwise noted) Characteristic Frequency Range Symbol Min Typ Max Unit BW 40 — 870 MHz Power Gain 870 MHz Gp 27 27.6 28.2 dB Slope 47 - 870 MHz S 0 0.7 1.4 dB Gain Flatness (40 - 870 MHz, Peak - to - Valley) GF — — 0.7 dB Return Loss — Input (Zo = 75 Ohms) IRL 20 18 16 — — — — — — 47 - 500 MHz 501 - 750 MHz 751 - 870 MHz © Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor ARCHIVE INFORMATION ARCHIVE INFORMATION Gallium Arsenide CATV Amplifier Module dB MHW8267AN 1 Table 3. Electrical Characteristics (VCC = 24 Vdc, TC = +45°C, 75 Ω system unless otherwise noted) (continued) Characteristic Symbol Min Typ Max 20 18 16 — — — — — — ORL 47 - 160 MHz f > 160 - 700 MHz f > 701 - 870 MHz Unit dB Composite Second Order (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) 112 - Channel FLAT 79 - Channel FLAT 112 - Channel, 12db Tilt 79 - Channel, 12db Tilt CSO112 CSO79 CSO112 CSO79 — — — — - 64 - 68 - 64 - 69 - 62 - 66 - 62 - 67 Cross Modulation Distortion @ Ch 2 (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) 112 - Channel FLAT 79 - Channel FLAT 112 - Channel, 12db Tilt 79 - Channel, 12db Tilt XMD112 XMD79 XMD112 XMD79 — — — — - 57 - 59 - 52 - 55 - 55 - 57 - 50 - 52 Composite Triple Beat (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) 112 - Channel FLAT 79 - Channel FLAT 112 - Channel, 12db Tilt 79 - Channel, 12db Tilt CTB112 CTB79 CTB112 CTB79 — — — — - 59 –66 - 57 - 62 - 57 - 64 - 55 - 60 NF — — — — 5.5 5.5 5.8 6.0 — — — — dB IDC 410 440 460 mA Noise Figure DC Current (VDC = 24 V, TC = 45°C) dBc dBc dBc 50 MHz 550 MHz 750 MHz 870 MHz ARCHIVE INFORMATION ARCHIVE INFORMATION Return Loss — Output (Zo = 75 Ohms) MHW8267AN 2 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS Z 0.010 M T F M A M V J F NOTES: 1. DIMENSIONS ARE IN INCHES. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. Q 2X R F 2X 6−32UNC−2B L ARCHIVE INFORMATION 2X 0.010 U Z T A M M E 1 2 3 5 7 8 9 C N K E 4X 2X 0.010 M Z T A G 7X P D 0.020 Y INCHES MIN MAX −−− 1.775 −−− 1.085 −−− 0.840 0.015 0.021 0.465 0.510 0.300 0.325 0.100 BSC 0.156 BSC 0.315 0.355 1.000 BSC 0.165 BSC 0.100 BSC 0.148 0.168 −−− 0.600 1.500 BSC 0.200 BSC −−− 0.250 0.435 −−− 0.400 BSC 0.152 0.163 0.009 0.011 Z X T W DIM A B C D E F G J K L N P Q R S U V W X Y Z X M T A M X M CASE 1302 - 01 ISSUE E STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. RF INPUT GROUND GROUND DELETED VDC DELETED GROUND GROUND RF OUTPUT MILLIMETERS MIN MAX −−− 45.085 −−− 27.559 −−− 21.336 0.381 0.533 11.811 12.954 7.62 8.255 2.540 BSC 3.962 BSC 8.001 9.017 25.400 BSC 4.191 BSC 2.540 BSC 3.759 4.267 −−− 15.24 38.100 BSC 5.080 BSC −−− 6.350 11.049 −−− 10.160 BSC 3.861 4.140 0.229 0.279 ARCHIVE INFORMATION A S B A MHW8267AN RF Device Data Freescale Semiconductor 3 Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. 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ARCHIVE INFORMATION ARCHIVE INFORMATION How to Reach Us: Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006, 2008. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MHW8267AN Document Number: MHW8267AN 4Rev. 3, 5/2006 RF Device Data Freescale Semiconductor