Freescale Semiconductor
Technical Data
Document Number: MHW9189AN
Rev. 2, 5/2006
MHW9189AN
Features
• Specified for 79 - , 112 - and 132 - Channel Loading
• Excellent Distortion Performance
• Higher Output Capability
• Built - in Input Diode Protection
• GaAs FET Transistor Technology
• Unconditionally Stable Under All Load Conditions
• Output Port Ring Wave Protection
Applications
• CATV Systems Operating in the 47 to 870 MHz Frequency Range
• Output Stage Amplifier in Optical Nodes, Line Extenders and Trunk
Distribution Amplifiers for CATV Systems
• Driver Amplifier in Linear General Purpose Applications
Description
• 24 Vdc Supply, 47 to 870 MHz, CATV GaAs Forward Power Doubler
Amplifier Module
• Replaced MHW9189A. There are no form, fit or function changes with this
part replacement.
• RoHS Compliant
870 MHz
20.3 dB GAIN
132 - CHANNEL
GaAs CATV AMPLIFIER MODULE
CASE 1302 - 01, STYLE 2
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
RF Voltage Input (Single Tone)
Vin
+75
dBmV
DC Supply Voltage
VCC
+26
Vdc
Operating Case Temperature Range
TC
- 20 to +100
°C
Storage Temperature Range
Tstg
- 40 to +100
°C
Table 2. ESD Maximum Ratings
Rating
Input Value
Output Value
300
300
V
2
2
kV
Surge Voltage per IEC 1000 - 4 - 5
Human Body Model per Mil. Std. 1686
Unit
Table 3. Electrical Characteristics (VCC = 24 Vdc, TC = +45°C, 75 Ω system unless otherwise noted)
Characteristic
Frequency Range
Symbol
Min
Typ
Max
Unit
BW
47
—
870
MHz
Power Gain
870 MHz
Gp
19.7
20.3
20.9
dB
Slope
47- 870 MHz
S
0
0.5
1.0
dB
Gain Flatness (47 - 870 MHz, Peak - to - Valley)
GF
—
—
0.5
dB
Return Loss — Input
(Zo = 75 Ohms)
IRL
20
18
16
—
—
—
—
—
—
20
18
—
—
—
—
Return Loss — Output
(Zo = 75 Ohms)
47- 500 MHz
501- 750 MHz
751- 870 MHz
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
dB
ORL
47- 160 MHz
f > 160 MHz
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Gallium Arsenide
CATV Amplifier Module
dB
MHW9189AN
1
Table 3. Electrical Characteristics (VCC = 24 Vdc, TC = +45°C, 75 Ω system unless otherwise noted) (continued)
Symbol
Min
Typ
Max
Unit
Composite Second Order
(Vout = +48 dBmV/ch., Worst Case)
(Vout = +48 dBmV/ch., Worst Case)
(Vout = +48 dBmV/ch., Worst Case)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
132- Channel FLAT
112- Channel FLAT
79- Channel FLAT
112- Channel, 12 dB Tilt
112- Channel, 13.5 dB Tilt
112- Channel, 17 dB Tilt
79- Channel, 12 dB Tilt
79- Channel, 13.5 dB Tilt
79- Channel, 17 dB Tilt
CSO132
CSO112
CSO79
CSO112
CSO112
CSO112
CSO79
CSO79
CSO79
—
—
—
—
—
—
—
—
—
- 64
- 66
- 70
- 65
- 64
- 63
- 69
- 74
- 73
- 62
- 64
- 68
- 63
- 62
- 61
- 67
- 72
- 71
Cross Modulation Distortion @ Ch 2
(Vout = +48 dBmV/ch., FM = 55 MHz)
(Vout = +48 dBmV/ch., FM = 55 MHz)
(Vout = +48 dBmV/ch., FM = 55 MHz)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
132- Channel FLAT
112- Channel FLAT
79- Channel FLAT
112- Channel, 12 dB Tilt
112- Channel, 13.5 dB Tilt
112- Channel, 17 dB Tilt
79- Channel, 12 dB Tilt
79- Channel, 13.5 dB Tilt
79- Channel, 17 dB Tilt
XMD132
XMD112
XMD79
XMD112
XMD112
XMD112
XMD79
XMD79
XMD79
—
—
—
—
—
—
—
—
—
- 57
- 59
- 62
- 53
- 55
- 58
- 60
- 62
- 67
- 55
- 57
- 60
- 51
- 53
- 56
- 47
- 60
- 65
Composite Triple Beat
(Vout = +48 dBmV/ch., Worst Case)
(Vout = +48 dBmV/ch., Worst Case)
(Vout = +48 dBmV/ch., Worst Case)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
132- Channel FLAT
112- Channel FLAT
79- Channel FLAT
112- Channel, 12 dB Tilt
112- Channel, 13.5 dB Tilt
112- Channel, 17 dB Tilt
79- Channel, 12 dB Tilt
79- Channel, 13.5 dB Tilt
79- Channel, 17 dB Tilt
CTB132
CTB112
CTB79
CTB112
CTB112
CTB112
CTB79
CTB79
CTB79
—
—
—
—
—
—
—
—
—
- 58
- 62
–68
- 60
- 61
- 64
- 66
- 71
- 74
- 56
- 60
- 66
- 58
- 59
- 62
- 64
- 69
- 72
NF
—
—
—
—
4.0
4.0
4.0
4.0
5.0
5.0
5.0
5.0
dB
IDC
410
425
440
mA
Noise Figure
DC Current (VDC = 24 V, TC = 45°C)
dBc
dBc
dBc
50 MHz
550 MHz
750 MHz
870 MHz
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Characteristic
MHW9189AN
2
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
Z
0.010
M
T F
M
A
M
V
J
F
NOTES:
1. DIMENSIONS ARE IN INCHES.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
Q
2X
R
F
2X 6−32UNC−2B
L
ARCHIVE INFORMATION
2X
0.010
U
Z T A
M
M
E
1 2
3
5
7 8 9
C
N
K
E
Z
X
T
4X
2X
0.010
M
Z T A
G
7X
P
D
0.020
Y
W
X
M
T A
M
X
M
CASE 1302 - 01
ISSUE E
DIM
A
B
C
D
E
F
G
J
K
L
N
P
Q
R
S
U
V
W
X
Y
Z
INCHES
MIN
MAX
−−−
1.775
−−−
1.085
−−−
0.840
0.015
0.021
0.465
0.510
0.300
0.325
0.100 BSC
0.156 BSC
0.315
0.355
1.000 BSC
0.165 BSC
0.100 BSC
0.148
0.168
−−−
0.600
1.500 BSC
0.200 BSC
−−−
0.250
0.435
−−−
0.400 BSC
0.152
0.163
0.009
0.011
STYLE 2:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
RF OUTPUT
GROUND
GROUND
DELETED
VDC
DELETED
GROUND
GROUND
RF INPUT
MILLIMETERS
MIN
MAX
−−− 45.085
−−− 27.559
−−− 21.336
0.381
0.533
11.811 12.954
7.62
8.255
2.540 BSC
3.962 BSC
8.001
9.017
25.400 BSC
4.191 BSC
2.540 BSC
3.759
4.267
−−−
15.24
38.100 BSC
5.080 BSC
−−−
6.350
11.049
−−−
10.160 BSC
3.861
4.140
0.229
0.279
ARCHIVE INFORMATION
A
S
B
A
MHW9189AN
RF Device Data
Freescale Semiconductor
3
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MHW9189AN
Document Number: MHW9189AN
4Rev. 2, 5/2006
RF Device Data
Freescale Semiconductor