Freescale Semiconductor
Data Sheet: Technical Data
Document Number: K10P32M50SF0
Rev. 4 5/2012
K10P32M50SF0
K10 Sub-Family
Supports the following:
MK10DN32VFM5, MK10DX32VFM5,
MK10DN64VFM5, MK10DX64VFM5,
MK10DN128VFM5, MK10DX128VFM5
Features
• Operating Characteristics
– Voltage range: 1.71 to 3.6 V
– Flash write voltage range: 1.71 to 3.6 V
– Temperature range (ambient): -40 to 105°C
• Performance
– Up to 50 MHz ARM Cortex-M4 core with DSP
instructions delivering 1.25 Dhrystone MIPS per
MHz
• Memories and memory interfaces
– Up to 128 KB program flash.
– Up to 32 KB FlexNVM on FlexMemory devices
– 2 KB FlexRAM on FlexMemory devices
– Up to 16 KB RAM
– Serial programming interface (EzPort)
• Clocks
– 3 to 32 MHz crystal oscillator
– 32 kHz crystal oscillator
– Multi-purpose clock generator
• System peripherals
– Multiple low-power modes to provide power
optimization based on application requirements
– 4-channel DMA controller, supporting up to 41
request sources
– External watchdog monitor
– Software watchdog
– Low-leakage wakeup unit
• Security and integrity modules
– Hardware CRC module to support fast cyclic
redundancy checks
– 128-bit unique identification (ID) number per chip
• Analog modules
– 16-bit SAR ADC
– Two analog comparators (CMP) containing a 6-bit
DAC and programmable reference input
• Timers
– Programmable delay block
– Eight-channel motor control/general purpose/PWM
timer
– Two-channel quadrature decoder/general purpose
timer
– Periodic interrupt timers
– 16-bit low-power timer
– Carrier modulator transmitter
– Real-time clock
• Communication interfaces
– SPI module
– I2C module
– Three UART modules
– I2S module
Freescale reserves the right to change the detail specifications as may be
required to permit improvements in the design of its products.
© 2011–2012 Freescale Semiconductor, Inc.
Table of Contents
1 Ordering parts...........................................................................3
1.1 Determining valid orderable parts......................................3
5.3.2
General switching specifications...........................20
5.4 Thermal specifications.......................................................21
2 Part identification......................................................................3
5.4.1
Thermal operating requirements...........................21
2.1 Description.........................................................................3
5.4.2
Thermal attributes.................................................21
2.2 Format...............................................................................3
6 Peripheral operating requirements and behaviors....................22
2.3 Fields.................................................................................3
6.1 Core modules....................................................................22
2.4 Example............................................................................4
6.1.1
JTAG electricals....................................................22
3 Terminology and guidelines......................................................4
6.2 System modules................................................................25
3.1 Definition: Operating requirement......................................4
6.3 Clock modules...................................................................25
3.2 Definition: Operating behavior...........................................5
6.3.1
MCG specifications...............................................25
3.3 Definition: Attribute............................................................5
6.3.2
Oscillator electrical specifications.........................27
3.4 Definition: Rating...............................................................6
6.3.3
32 kHz Oscillator Electrical Characteristics...........29
3.5 Result of exceeding a rating..............................................6
3.6 Relationship between ratings and operating
requirements......................................................................6
6.4 Memories and memory interfaces.....................................30
6.4.1
Flash electrical specifications................................30
6.4.2
EzPort Switching Specifications............................34
3.7 Guidelines for ratings and operating requirements............7
6.5 Security and integrity modules..........................................35
3.8 Definition: Typical value.....................................................7
6.6 Analog...............................................................................35
3.9 Typical value conditions....................................................8
6.6.1
ADC electrical specifications.................................35
4 Ratings......................................................................................9
6.6.2
CMP and 6-bit DAC electrical specifications.........40
4.1 Thermal handling ratings...................................................9
6.7 Timers................................................................................43
4.2 Moisture handling ratings..................................................9
6.8 Communication interfaces.................................................43
4.3 ESD handling ratings.........................................................9
6.8.1
4.4 Voltage and current operating ratings...............................9
DSPI switching specifications (limited voltage
range)....................................................................43
5 General.....................................................................................10
6.8.2
DSPI switching specifications (full voltage range).45
5.1 AC electrical characteristics..............................................10
6.8.3
I2C switching specifications..................................47
5.2 Nonswitching electrical specifications...............................10
6.8.4
UART switching specifications..............................47
6.8.5
I2S/SAI Switching Specifications..........................47
5.2.1
Voltage and current operating requirements.........10
5.2.2
LVD and POR operating requirements.................11
5.2.3
Voltage and current operating behaviors..............12
5.2.4
Power mode transition operating behaviors..........13
7 Dimensions...............................................................................53
5.2.5
Power consumption operating behaviors..............14
7.1 Obtaining package dimensions.........................................53
5.2.6
EMC radiated emissions operating behaviors.......18
8 Pinout........................................................................................53
5.2.7
Designing with radiated emissions in mind...........19
8.1 K10 Signal Multiplexing and Pin Assignments..................53
5.2.8
Capacitance attributes..........................................19
8.2 K10 Pinouts.......................................................................54
5.3 Switching specifications.....................................................19
9 Revision History........................................................................55
5.3.1
6.9 Human-machine interfaces (HMI)......................................51
6.9.1
TSI electrical specifications...................................51
Device clock specifications...................................19
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
2
Freescale Semiconductor, Inc.
Ordering parts
1 Ordering parts
1.1 Determining valid orderable parts
Valid orderable part numbers are provided on the web. To determine the orderable part
numbers for this device, go to http://www.freescale.com and perform a part number
search for the following device numbers: PK10 and MK10 .
2 Part identification
2.1 Description
Part numbers for the chip have fields that identify the specific part. You can use the
values of these fields to determine the specific part you have received.
2.2 Format
Part numbers for this device have the following format:
Q K## A M FFF R T PP CC N
2.3 Fields
This table lists the possible values for each field in the part number (not all combinations
are valid):
Field
Description
Values
Q
Qualification status
• M = Fully qualified, general market flow
• P = Prequalification
K##
Kinetis family
• K10
A
Key attribute
• D = Cortex-M4 w/ DSP
• F = Cortex-M4 w/ DSP and FPU
M
Flash memory type
• N = Program flash only
• X = Program flash and FlexMemory
Table continues on the next page...
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc.
3
Terminology and guidelines
Field
Description
Values
FFF
Program flash memory size
•
•
•
•
•
•
32 = 32 KB
64 = 64 KB
128 = 128 KB
256 = 256 KB
512 = 512 KB
1M0 = 1 MB
R
Silicon revision
• Z = Initial
• (Blank) = Main
• A = Revision after main
T
Temperature range (°C)
• V = –40 to 105
• C = –40 to 85
PP
Package identifier
•
•
•
•
•
•
•
•
•
•
•
•
•
FM = 32 QFN (5 mm x 5 mm)
FT = 48 QFN (7 mm x 7 mm)
LF = 48 LQFP (7 mm x 7 mm)
LH = 64 LQFP (10 mm x 10 mm)
MP = 64 MAPBGA (5 mm x 5 mm)
LK = 80 LQFP (12 mm x 12 mm)
MB = 81 MAPBGA (8 mm x 8 mm)
LL = 100 LQFP (14 mm x 14 mm)
ML = 104 MAPBGA (8 mm x 8 mm)
MC = 121 MAPBGA (8 mm x 8 mm)
LQ = 144 LQFP (20 mm x 20 mm)
MD = 144 MAPBGA (13 mm x 13 mm)
MJ = 256 MAPBGA (17 mm x 17 mm)
CC
Maximum CPU frequency (MHz)
•
•
•
•
•
5 = 50 MHz
7 = 72 MHz
10 = 100 MHz
12 = 120 MHz
15 = 150 MHz
N
Packaging type
• R = Tape and reel
• (Blank) = Trays
2.4 Example
This is an example part number:
MK10DN32VFM5
3 Terminology and guidelines
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
4
Freescale Semiconductor, Inc.
Terminology and guidelines
3.1 Definition: Operating requirement
An operating requirement is a specified value or range of values for a technical
characteristic that you must guarantee during operation to avoid incorrect operation and
possibly decreasing the useful life of the chip.
3.1.1 Example
This is an example of an operating requirement, which you must meet for the
accompanying operating behaviors to be guaranteed:
Symbol
VDD
Description
1.0 V core supply
voltage
Min.
0.9
Max.
1.1
Unit
V
3.2 Definition: Operating behavior
An operating behavior is a specified value or range of values for a technical
characteristic that are guaranteed during operation if you meet the operating requirements
and any other specified conditions.
3.2.1 Example
This is an example of an operating behavior, which is guaranteed if you meet the
accompanying operating requirements:
Symbol
IWP
Description
Digital I/O weak pullup/ 10
pulldown current
Min.
Max.
130
Unit
µA
3.3 Definition: Attribute
An attribute is a specified value or range of values for a technical characteristic that are
guaranteed, regardless of whether you meet the operating requirements.
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc.
5
Terminology and guidelines
3.3.1 Example
This is an example of an attribute:
Symbol
CIN_D
Description
Input capacitance:
digital pins
Min.
—
Max.
7
Unit
pF
3.4 Definition: Rating
A rating is a minimum or maximum value of a technical characteristic that, if exceeded,
may cause permanent chip failure:
• Operating ratings apply during operation of the chip.
• Handling ratings apply when the chip is not powered.
3.4.1 Example
This is an example of an operating rating:
Symbol
VDD
Description
1.0 V core supply
voltage
Min.
–0.3
Max.
1.2
Unit
V
3.5 Result of exceeding a rating
Failures in time (ppm)
40
30
The likelihood of permanent chip failure increases rapidly as
soon as a characteristic begins to exceed one of its operating ratings.
20
10
0
Operating rating
Measured characteristic
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
6
Freescale Semiconductor, Inc.
Terminology and guidelines
3.6 Relationship between ratings and operating requirements
e
Op
ing
rat
r
(
ng
ati
in.
t (m
)
n.
mi
rat
e
Op
ing
)
t (m
e
ir
qu
re
n
me
ing
rat
e
Op
ax
.)
e
ir
qu
re
n
me
ing
rat
e
Op
ng
ati
ax
(m
.)
r
Fatal range
Degraded operating range
Normal operating range
Degraded operating range
Fatal range
Expected permanent failure
- No permanent failure
- Possible decreased life
- Possible incorrect operation
- No permanent failure
- Correct operation
- No permanent failure
- Possible decreased life
- Possible incorrect operation
Expected permanent failure
–∞
∞
Operating (power on)
g
lin
nd
Ha
in
rat
n.)
mi
g(
nd
Ha
g
lin
ing
rat
ax
(m
.)
Fatal range
Handling range
Fatal range
Expected permanent failure
No permanent failure
Expected permanent failure
–∞
Handling (power off)
∞
3.7 Guidelines for ratings and operating requirements
Follow these guidelines for ratings and operating requirements:
• Never exceed any of the chip’s ratings.
• During normal operation, don’t exceed any of the chip’s operating requirements.
• If you must exceed an operating requirement at times other than during normal
operation (for example, during power sequencing), limit the duration as much as
possible.
3.8 Definition: Typical value
A typical value is a specified value for a technical characteristic that:
• Lies within the range of values specified by the operating behavior
• Given the typical manufacturing process, is representative of that characteristic
during operation when you meet the typical-value conditions or other specified
conditions
Typical values are provided as design guidelines and are neither tested nor guaranteed.
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc.
7
Terminology and guidelines
3.8.1 Example 1
This is an example of an operating behavior that includes a typical value:
Symbol
Description
IWP
Digital I/O weak
pullup/pulldown
current
Min.
10
Typ.
70
Max.
130
Unit
µA
3.8.2 Example 2
This is an example of a chart that shows typical values for various voltage and
temperature conditions:
5000
4500
4000
TJ
IDD_STOP (μA)
3500
150 °C
3000
105 °C
2500
25 °C
2000
–40 °C
1500
1000
500
0
0.90
0.95
1.00
1.05
1.10
VDD (V)
3.9 Typical value conditions
Typical values assume you meet the following conditions (or other conditions as
specified):
Symbol
Description
Value
Unit
TA
Ambient temperature
25
°C
VDD
3.3 V supply voltage
3.3
V
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
8
Freescale Semiconductor, Inc.
Ratings
4 Ratings
4.1 Thermal handling ratings
Symbol
Description
Min.
Max.
Unit
Notes
TSTG
Storage temperature
–55
150
°C
1
TSDR
Solder temperature, lead-free
—
260
°C
2
1. Determined according to JEDEC Standard JESD22-A103, High Temperature Storage Life.
2. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic
Solid State Surface Mount Devices.
4.2 Moisture handling ratings
Symbol
MSL
Description
Moisture sensitivity level
Min.
Max.
Unit
Notes
—
3
—
1
1. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic
Solid State Surface Mount Devices.
4.3 ESD handling ratings
Symbol
Description
Min.
Max.
Unit
Notes
VHBM
Electrostatic discharge voltage, human body model
-2000
+2000
V
1
VCDM
Electrostatic discharge voltage, charged-device model
-500
+500
V
2
Latch-up current at ambient temperature of 105°C
-100
+100
mA
ILAT
1. Determined according to JEDEC Standard JESD22-A114, Electrostatic Discharge (ESD) Sensitivity Testing Human Body
Model (HBM).
2. Determined according to JEDEC Standard JESD22-C101, Field-Induced Charged-Device Model Test Method for
Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components.
4.4 Voltage and current operating ratings
Symbol
VDD
Description
Min.
Max.
Unit
Digital supply voltage
–0.3
3.8
V
Table continues on the next page...
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc.
9
General
Symbol
IDD
Description
Digital supply current
Min.
Max.
Unit
—
155
mA
VDIO
Digital input voltage (except RESET, EXTAL, and XTAL)
–0.3
VDD + 0.3
V
VAIO
Analog1, RESET, EXTAL, and XTAL input voltage
–0.3
VDD + 0.3
V
Maximum current single pin limit (applies to all port pins)
–25
25
mA
VDD – 0.3
VDD + 0.3
V
–0.3
3.8
V
ID
VDDA
Analog supply voltage
VBAT
RTC battery supply voltage
1. Analog pins are defined as pins that do not have an associated general purpose I/O port function.
5 General
5.1 AC electrical characteristics
Unless otherwise specified, propagation delays are measured from the 50% to the 50%
point, and rise and fall times are measured at the 20% and 80% points, as shown in the
following figure.
Figure 1. Input signal measurement reference
All digital I/O switching characteristics assume:
1. output pins
• have CL=30pF loads,
• are configured for fast slew rate (PORTx_PCRn[SRE]=0), and
• are configured for high drive strength (PORTx_PCRn[DSE]=1)
2. input pins
• have their passive filter disabled (PORTx_PCRn[PFE]=0)
5.2 Nonswitching electrical specifications
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
10
Freescale Semiconductor, Inc.
General
5.2.1 Voltage and current operating requirements
Table 1. Voltage and current operating requirements
Symbol
Description
Min.
Max.
Unit
VDD
Supply voltage
1.71
3.6
V
VDDA
Analog supply voltage
1.71
3.6
V
VDD – VDDA VDD-to-VDDA differential voltage
–0.1
0.1
V
VSS – VSSA VSS-to-VSSA differential voltage
–0.1
0.1
V
1.71
3.6
V
• 2.7 V ≤ VDD ≤ 3.6 V
0.7 × VDD
—
V
• 1.7 V ≤ VDD ≤ 2.7 V
0.75 × VDD
—
V
• 2.7 V ≤ VDD ≤ 3.6 V
—
0.35 × VDD
V
• 1.7 V ≤ VDD ≤ 2.7 V
—
0.3 × VDD
V
0.06 × VDD
—
V
VBAT
VIH
VIL
RTC battery supply voltage
Input high voltage
Input low voltage
VHYS
Input hysteresis
IICIO
I/O pin DC injection current — single pin
1
mA
• VIN < VSS-0.3V (Negative current injection)
-3
—
—
+3
-25
—
—
+25
1.2
—
V
VPOR_VBAT
—
V
• VIN > VDD+0.3V (Positive current injection)
IICcont
Contiguous pin DC injection current —regional limit,
includes sum of negative injection currents or sum of
positive injection currents of 16 contiguous pins
• Negative current injection
• Positive current injection
VRAM
VRFVBAT
Notes
VDD voltage required to retain RAM
VBAT voltage required to retain the VBAT register file
mA
1. All analog pins are internally clamped to VSS and VDD through ESD protection diodes. If VIN is greater than VAIO_MIN
(=VSS-0.3V) and VIN is less than VAIO_MAX(=VDD+0.3V) is observed, then there is no need to provide current limiting
resistors at the pads. If these limits cannot be observed then a current limiting resistor is required. The negative DC
injection current limiting resistor is calculated as R=(VAIO_MIN-VIN)/|IIC|. The positive injection current limiting resistor is
calcualted as R=(VIN-VAIO_MAX)/|IIC|. Select the larger of these two calculated resistances.
5.2.2 LVD and POR operating requirements
Table 2. VDD supply LVD and POR operating requirements
Symbol
VPOR
Description
Min.
Typ.
Max.
Unit
Falling VDD POR detect voltage
0.8
1.1
1.5
V
Notes
Table continues on the next page...
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc.
11
General
Table 2. VDD supply LVD and POR operating requirements (continued)
Symbol
VLVDH
Description
Min.
Typ.
Max.
Unit
Falling low-voltage detect threshold — high
range (LVDV=01)
2.48
2.56
2.64
V
Low-voltage warning thresholds — high range
1
VLVW1H
• Level 1 falling (LVWV=00)
2.62
2.70
2.78
V
VLVW2H
• Level 2 falling (LVWV=01)
2.72
2.80
2.88
V
VLVW3H
• Level 3 falling (LVWV=10)
2.82
2.90
2.98
V
VLVW4H
• Level 4 falling (LVWV=11)
2.92
3.00
3.08
V
—
±80
—
mV
1.54
1.60
1.66
V
VHYSH
Low-voltage inhibit reset/recover hysteresis —
high range
VLVDL
Falling low-voltage detect threshold — low range
(LVDV=00)
Low-voltage warning thresholds — low range
1
VLVW1L
• Level 1 falling (LVWV=00)
1.74
1.80
1.86
V
VLVW2L
• Level 2 falling (LVWV=01)
1.84
1.90
1.96
V
VLVW3L
• Level 3 falling (LVWV=10)
1.94
2.00
2.06
V
VLVW4L
• Level 4 falling (LVWV=11)
2.04
2.10
2.16
V
—
±60
—
mV
VHYSL
Low-voltage inhibit reset/recover hysteresis —
low range
Notes
VBG
Bandgap voltage reference
0.97
1.00
1.03
V
tLPO
Internal low power oscillator period — factory
trimmed
900
1000
1100
μs
1. Rising thresholds are falling threshold + hysteresis voltage
Table 3. VBAT power operating requirements
Symbol
Description
VPOR_VBAT Falling VBAT supply POR detect voltage
Min.
Typ.
Max.
Unit
0.8
1.1
1.5
V
Notes
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
12
Freescale Semiconductor, Inc.
General
5.2.3 Voltage and current operating behaviors
Table 4. Voltage and current operating behaviors
Symbol
VOH
Description
Min.
Max.
Unit
• 2.7 V ≤ VDD ≤ 3.6 V, IOH = - 9 mA
VDD – 0.5
—
V
• 1.71 V ≤ VDD ≤ 2.7 V, IOH = -3 mA
VDD – 0.5
—
V
• 2.7 V ≤ VDD ≤ 3.6 V, IOH = -2 mA
VDD – 0.5
—
V
• 1.71 V ≤ VDD ≤ 2.7 V, IOH = -0.6 mA
VDD – 0.5
—
V
—
100
mA
• 2.7 V ≤ VDD ≤ 3.6 V, IOL = 9 mA
—
0.5
V
• 1.71 V ≤ VDD ≤ 2.7 V, IOL = 3 mA
—
0.5
V
• 2.7 V ≤ VDD ≤ 3.6 V, IOL = 2 mA
—
0.5
V
• 1.71 V ≤ VDD ≤ 2.7 V, IOL = 0.6 mA
—
0.5
V
—
100
mA
• @ full temperature range
—
1.0
μA
• @ 25 °C
—
0.1
μA
Notes
Output high voltage — high drive strength
Output high voltage — low drive strength
IOHT
Output high current total for all ports
VOL
Output low voltage — high drive strength
Output low voltage — low drive strength
IOLT
IIN
Output low current total for all ports
Input leakage current (per pin)
1
IOZ
Hi-Z (off-state) leakage current (per pin)
—
1
μA
IOZ
Total Hi-Z (off-state) leakage current (all input pins)
—
4
μA
RPU
Internal pullup resistors
22
50
kΩ
2
RPD
Internal pulldown resistors
22
50
kΩ
3
1. Tested by ganged leakage method
2. Measured at Vinput = VSS
3. Measured at Vinput = VDD
5.2.4 Power mode transition operating behaviors
All specifications except tPOR, and VLLSx→RUN recovery times in the following table
assume this clock configuration:
• CPU and system clocks = 50 MHz
• Bus clock = 50 MHz
• Flash clock = 25 MHz
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc.
13
General
Table 5. Power mode transition operating behaviors
Symbol
tPOR
Description
After a POR event, amount of time from the point VDD
reaches 1.71 V to execution of the first instruction
across the operating temperature range of the chip.
• VLLS0 → RUN
• VLLS1 → RUN
• VLLS2 → RUN
• VLLS3 → RUN
• LLS → RUN
• VLPS → RUN
• STOP → RUN
Min.
Max.
Unit
Notes
—
300
μs
1
—
130
μs
—
130
μs
—
70
μs
—
70
μs
—
6
μs
—
5.2
μs
—
5.2
μs
1. Normal boot (FTFL_OPT[LPBOOT]=1)
5.2.5 Power consumption operating behaviors
Table 6. Power consumption operating behaviors
Symbol
IDDA
IDD_RUN
Description
Analog supply current
Run mode current — all peripheral clocks
disabled, code executing from flash
• @ 1.8V
Min.
Typ.
Max.
Unit
Notes
—
—
See note
mA
1
2
—
13.7
15.1
mA
—
13.9
15.3
mA
• @ 3.0V
IDD_RUN
Run mode current — all peripheral clocks
enabled, code executing from flash
3, 4
—
16.1
18.2
mA
—
16.3
17.7
mA
—
16.7
18.4
mA
• @ 1.8V
• @ 3.0V
• @ 25°C
• @ 125°C
IDD_WAIT
Wait mode high frequency current at 3.0 V — all
peripheral clocks disabled
—
7.5
8.4
mA
2
IDD_WAIT
Wait mode reduced frequency current at 3.0 V
— all peripheral clocks disabled
—
5.6
6.4
mA
5
Table continues on the next page...
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
14
Freescale Semiconductor, Inc.
General
Table 6. Power consumption operating behaviors (continued)
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
IDD_VLPR
Very-low-power run mode current at 3.0 V — all
peripheral clocks disabled
—
867
—
μA
6
IDD_VLPR
Very-low-power run mode current at 3.0 V — all
peripheral clocks enabled
—
1.1
—
mA
7
IDD_VLPW
Very-low-power wait mode current at 3.0 V
—
509
—
μA
8
IDD_STOP
Stop mode current at 3.0 V
• @ –40 to 25°C
—
310
426
μA
• @ 70°C
—
384
458
μA
• @ 105°C
—
629
1100
μA
• @ –40 to 25°C
—
3.5
22.6
μA
• @ 70°C
—
20.7
52.9
μA
• @ 105°C
—
85
220
μA
• @ –40 to 25°C
—
2.1
3.7
μA
• @ 70°C
—
7.7
43.1
μA
• @ 105°C
—
32.2
68
μA
• @ –40 to 25°C
—
1.5
2.9
μA
• @ 70°C
—
4.8
22.5
μA
• @ 105°C
—
20
37.8
μA
• @ –40 to 25°C
—
1.4
2.8
μA
• @ 70°C
—
4.1
19.2
μA
• @ 105°C
—
17.3
32.4
μA
• @ –40 to 25°C
—
0.678
1.3
μA
• @ 70°C
—
2.8
13.6
μA
• @ 105°C
—
13.6
24.5
μA
—
0.367
1.0
μA
—
2.4
13.3
μA
—
13.2
24.1
μA
IDD_VLPS
IDD_LLS
IDD_VLLS3
IDD_VLLS2
IDD_VLLS1
IDD_VLLS0
Very-low-power stop mode current at 3.0 V
Low leakage stop mode current at 3.0 V
Very low-leakage stop mode 3 current at 3.0 V
Very low-leakage stop mode 2 current at 3.0 V
Very low-leakage stop mode 1 current at 3.0 V
Very low-leakage stop mode 0 current at 3.0 V
with POR detect circuit enabled
• @ –40 to 25°C
• @ 70°C
• @ 105°C
Table continues on the next page...
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc.
15
General
Table 6. Power consumption operating behaviors (continued)
Symbol
IDD_VLLS0
Description
• @ 70°C
• @ 105°C
Max.
Unit
—
0.176
0.859
μA
—
2.2
13.1
μA
—
13
23.9
μA
—
0.19
0.22
μA
—
0.49
0.64
μA
—
2.2
3.2
μA
Notes
Average current with RTC and 32kHz disabled at
3.0 V
• @ –40 to 25°C
• @ 70°C
• @ 105°C
IDD_VBAT
Typ.
Very low-leakage stop mode 0 current at 3.0 V
with POR detect circuit disabled
• @ –40 to 25°C
IDD_VBAT
Min.
Average current when CPU is not accessing
RTC registers
9
• @ 1.8V
• @ –40 to 25°C
• @ 70°C
• @ 105°C
—
0.57
0.67
μA
—
0.90
1.2
μA
—
2.4
3.5
μA
—
0.67
0.94
μA
—
1.0
1.4
μA
—
2.7
3.9
μA
• @ 3.0V
• @ –40 to 25°C
• @ 70°C
• @ 105°C
1. The analog supply current is the sum of the active or disabled current for each of the analog modules on the device. See
each module's specification for its supply current.
2. 50MHz core and system clock, 25MHz bus clock, and 25MHz flash clock . MCG configured for FEI mode. All peripheral
clocks disabled.
3. 50MHz core and system clock, 25MHz bus clock, and 25MHz flash clock. MCG configured for FEI mode. All peripheral
clocks enabled, and peripherals are in active operation.
4. Max values are measured with CPU executing DSP instructions
5. 25MHz core and system clock, 25MHz bus clock, and 12.5MHz flash clock. MCG configured for FEI mode.
6. 4 MHz core, system, and bus clock and 1MHz flash clock. MCG configured for BLPE mode. All peripheral clocks disabled.
Code executing from flash.
7. 4 MHz core, system, and bus clock and 1MHz flash clock. MCG configured for BLPE mode. All peripheral clocks enabled
but peripherals are not in active operation. Code executing from flash.
8. 4 MHz core, system, and bus clock and 1MHz flash clock. MCG configured for BLPE mode. All peripheral clocks disabled.
9. Includes 32kHz oscillator current and RTC operation.
5.2.5.1
Diagram: Typical IDD_RUN operating behavior
The following data was measured under these conditions:
•
•
•
•
MCG in FBE mode
No GPIOs toggled
Code execution from flash with cache enabled
For the ALLOFF curve, all peripheral clocks are disabled except FTFL
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
16
Freescale Semiconductor, Inc.
General
Figure 2. Run mode supply current vs. core frequency
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc.
17
General
Figure 3. VLPR mode supply current vs. core frequency
5.2.6 EMC radiated emissions operating behaviors
Table 7. EMC radiated emissions operating behaviors for 64LQFP
Symbol
Description
Frequency
band (MHz)
Typ.
Unit
Notes
1,2
VRE1
Radiated emissions voltage, band 1
0.15–50
19
dBμV
VRE2
Radiated emissions voltage, band 2
50–150
21
dBμV
VRE3
Radiated emissions voltage, band 3
150–500
19
dBμV
VRE4
Radiated emissions voltage, band 4
500–1000
11
dBμV
IEC level
0.15–1000
L
—
VRE_IEC
2, 3
1. Determined according to IEC Standard 61967-1, Integrated Circuits - Measurement of Electromagnetic Emissions, 150
kHz to 1 GHz Part 1: General Conditions and Definitions and IEC Standard 61967-2, Integrated Circuits - Measurement of
Electromagnetic Emissions, 150 kHz to 1 GHz Part 2: Measurement of Radiated Emissions—TEM Cell and Wideband
TEM Cell Method. Measurements were made while the microcontroller was running basic application code. The reported
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
18
Freescale Semiconductor, Inc.
General
emission level is the value of the maximum measured emission, rounded up to the next whole number, from among the
measured orientations in each frequency range.
2. VDD = 3.3 V, TA = 25 °C, fOSC = 12 MHz (crystal), fSYS = 48 MHz, fBUS = 48MHz
3. Specified according to Annex D of IEC Standard 61967-2, Measurement of Radiated Emissions—TEM Cell and Wideband
TEM Cell Method
5.2.7 Designing with radiated emissions in mind
To find application notes that provide guidance on designing your system to minimize
interference from radiated emissions:
1. Go to http://www.freescale.com.
2. Perform a keyword search for “EMC design.”
5.2.8 Capacitance attributes
Table 8. Capacitance attributes
Symbol
Description
Min.
Max.
Unit
CIN_A
Input capacitance: analog pins
—
7
pF
CIN_D
Input capacitance: digital pins
—
7
pF
5.3 Switching specifications
5.3.1 Device clock specifications
Table 9. Device clock specifications
Symbol
Description
Min.
Max.
Unit
Notes
Normal run mode
fSYS
System and core clock
—
50
MHz
fBUS
Bus clock
—
50
MHz
fFLASH
Flash clock
—
25
MHz
fLPTMR
LPTMR clock
—
25
MHz
VLPR mode1
fSYS
System and core clock
—
4
MHz
fBUS
Bus clock
—
4
MHz
fFLASH
Flash clock
—
1
MHz
fERCLK
External reference clock
—
16
MHz
Table continues on the next page...
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc.
19
General
Table 9. Device clock specifications (continued)
Symbol
Description
Min.
Max.
Unit
fLPTMR_pin
LPTMR clock
—
25
MHz
LPTMR external reference clock
—
16
MHz
fI2S_MCLK
I2S master clock
—
12.5
MHz
fI2S_BCLK
I2S bit clock
—
4
MHz
fLPTMR_ERCLK
Notes
1. The frequency limitations in VLPR mode here override any frequency specification listed in the timing specification for any
other module.
5.3.2 General switching specifications
These general purpose specifications apply to all signals configured for GPIO, UART,
CMT, and I2C signals.
Table 10. General switching specifications
Symbol
Description
Min.
Max.
Unit
Notes
GPIO pin interrupt pulse width (digital glitch filter
disabled) — Synchronous path
1.5
—
Bus clock
cycles
1, 2
GPIO pin interrupt pulse width (digital glitch filter
disabled, analog filter enabled) — Asynchronous path
100
—
ns
3
GPIO pin interrupt pulse width (digital glitch filter
disabled, analog filter disabled) — Asynchronous path
50
—
ns
3
External reset pulse width (digital glitch filter disabled)
100
—
ns
3
2
—
Bus clock
cycles
Mode select (EZP_CS) hold time after reset
deassertion
Port rise and fall time (high drive strength)
4
• Slew disabled
• 1.71 ≤ VDD ≤ 2.7V
—
• 2.7 ≤ VDD ≤ 3.6V
—
13
ns
ns
7
• Slew enabled
• 1.71 ≤ VDD ≤ 2.7V
—
• 2.7 ≤ VDD ≤ 3.6V
—
ns
36
ns
24
Table continues on the next page...
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
20
Freescale Semiconductor, Inc.
General
Table 10. General switching specifications (continued)
Symbol
Description
Min.
Max.
Unit
Port rise and fall time (low drive strength)
Notes
5
• Slew disabled
• 1.71 ≤ VDD ≤ 2.7V
—
12
ns
• 2.7 ≤ VDD ≤ 3.6V
—
6
ns
• 1.71 ≤ VDD ≤ 2.7V
—
36
ns
• 2.7 ≤ VDD ≤ 3.6V
—
24
ns
• Slew enabled
1. This is the minimum pulse width that is guaranteed to pass through the pin synchronization circuitry. Shorter pulses may or
may not be recognized. In Stop, VLPS, LLS, and VLLSx modes, the synchronizer is bypassed so shorter pulses can be
recognized in that case.
2. The greater synchronous and asynchronous timing must be met.
3. This is the minimum pulse width that is guaranteed to be recognized as a pin interrupt request in Stop, VLPS, LLS, and
VLLSx modes.
4. 75pF load
5. 15pF load
5.4 Thermal specifications
5.4.1 Thermal operating requirements
Table 11. Thermal operating requirements
Symbol
Description
Min.
Max.
Unit
TJ
Die junction temperature
–40
125
°C
TA
Ambient temperature
–40
105
°C
5.4.2 Thermal attributes
Board type
Symbol
Description
Single-layer (1s)
RθJA
Four-layer (2s2p)
RθJA
32 QFN
Unit
Notes
Thermal
94
resistance, junction
to ambient (natural
convection)
°C/W
1, 2
Thermal
32
resistance, junction
to ambient (natural
convection)
°C/W
1, 3
Table continues on the next page...
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc.
21
Peripheral operating requirements and behaviors
Board type
Symbol
Description
Unit
Notes
Single-layer (1s)
RθJMA
Thermal
78
resistance, junction
to ambient (200 ft./
min. air speed)
°C/W
1,3
Four-layer (2s2p)
RθJMA
Thermal
27
resistance, junction
to ambient (200 ft./
min. air speed)
°C/W
,
—
RθJB
Thermal
12
resistance, junction
to board
°C/W
5
—
RθJC
Thermal
1.5
resistance, junction
to case
°C/W
6
—
ΨJT
Thermal
6
characterization
parameter, junction
to package top
outside center
(natural
convection)
°C/W
7
1.
2.
3.
5.
6.
7.
32 QFN
Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site
(board) temperature, ambient temperature, air flow, power dissipation of other components on the board, and board
thermal resistance.
Determined according to JEDEC Standard JESD51-2, Integrated Circuits Thermal Test Method Environmental
Conditions—Natural Convection (Still Air) with the single layer board horizontal. For the LQFP, the board meets the
JESD51-3 specification. For the MAPBGA, the board meets the JESD51-9 specification.
Determined according to JEDEC Standard JESD51-6, Integrated Circuits Thermal Test Method Environmental
Conditions—Forced Convection (Moving Air) with the board horizontal.
Determined according to JEDEC Standard JESD51-8, Integrated Circuit Thermal Test Method Environmental
Conditions—Junction-to-Board. Board temperature is measured on the top surface of the board near the package.
Determined according to Method 1012.1 of MIL-STD 883, Test Method Standard, Microcircuits, with the cold plate
temperature used for the case temperature. The value includes the thermal resistance of the interface material
between the top of the package and the cold plate.
Determined according to JEDEC Standard JESD51-2, Integrated Circuits Thermal Test Method Environmental
Conditions—Natural Convection (Still Air).
6 Peripheral operating requirements and behaviors
6.1 Core modules
6.1.1 JTAG electricals
Table 12. JTAG voltage range electricals
Symbol
Description
Min.
Max.
Unit
Operating voltage
2.7
5.5
V
Table continues on the next page...
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
22
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
Table 12. JTAG voltage range electricals (continued)
Symbol
J1
Description
Min.
Max.
TCLK frequency of operation
Unit
MHz
• JTAG
—
10
• CJTAG
—
5
J2
TCLK cycle period
1/J1
—
ns
J3
TCLK clock pulse width
• JTAG
100
—
ns
• CJTAG
200
—
ns
ns
J4
TCLK rise and fall times
J5
TMS input data setup time to TCLK rise
• JTAG
• CJTAG
J6
TDI input data setup time to TCLK rise
J7
TMS input data hold time after TCLK rise
• JTAG
• CJTAG
J8
TDI input data hold time after TCLK rise
J9
TCLK low to TMS data valid
• JTAG
• CJTAG
—
1
53
—
112
—
8
—
3.4
—
3.4
—
3.4
—
—
48
—
85
ns
ns
ns
ns
ns
ns
J10
TCLK low to TDO data valid
—
48
ns
J11
Output data hold/invalid time after clock edge1
—
3
ns
1. They are common for JTAG and CJTAG. Input transition = 1 ns and Output load = 50pf
J2
J3
J3
TCLK (input)
J4
J4
Figure 4. Test clock input timing
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc.
23
Peripheral operating requirements and behaviors
TCLK
J5
Data inputs
J6
Input data valid
J7
Data outputs
Output data valid
J8
Data outputs
J7
Data outputs
Output data valid
Figure 5. Boundary scan (JTAG) timing
TCLK
J9
TDI/TMS
J10
Input data valid
J11
TDO
Output data valid
J12
TDO
J11
TDO
Output data valid
Figure 6. Test Access Port timing
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
24
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
TCLK
J14
J13
TRST
Figure 7. TRST timing
6.2 System modules
There are no specifications necessary for the device's system modules.
6.3 Clock modules
6.3.1 MCG specifications
Table 13. MCG specifications
Symbol
Description
Min.
Typ.
Max.
Unit
—
32.768
—
kHz
31.25
—
39.0625
kHz
Resolution of trimmed average DCO output
frequency at fixed voltage and temperature —
using SCTRIM and SCFTRIM
—
± 0.3
± 0.6
%fdco
1
Δfdco_t
Total deviation of trimmed average DCO output
frequency over voltage and temperature
—
+0.5/-0.7
±3
%fdco
1
Δfdco_t
Total deviation of trimmed average DCO output
frequency over fixed voltage and temperature
range of 0–70°C
—
± 0.3
—
%fdco
1
fintf_ft
Internal reference frequency (fast clock) —
factory trimmed at nominal VDD and 25°C
—
4
—
MHz
fintf_t
Internal reference frequency (fast clock) — user
trimmed at nominal VDD and 25 °C
3
—
5
MHz
fints_ft
Internal reference frequency (slow clock) —
factory trimmed at nominal VDD and 25 °C
fints_t
Internal reference frequency (slow clock) — user
trimmed
Δfdco_res_t
floc_low
Loss of external clock minimum frequency —
RANGE = 00
(3/5) x
fints_t
—
—
kHz
floc_high
Loss of external clock minimum frequency —
RANGE = 01, 10, or 11
(16/5) x
fints_t
—
—
kHz
Notes
FLL
Table continues on the next page...
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc.
25
Peripheral operating requirements and behaviors
Table 13. MCG specifications (continued)
Symbol
ffll_ref
fdco
Description
FLL reference frequency range
DCO output
frequency range
Low range (DRS=00)
Min.
Typ.
Max.
Unit
31.25
—
39.0625
kHz
20
20.97
25
MHz
40
41.94
50
MHz
60
62.91
75
MHz
80
83.89
100
MHz
—
23.99
—
MHz
—
47.97
—
MHz
—
71.99
—
MHz
—
95.98
—
MHz
—
180
—
—
150
—
—
—
1
ms
48.0
—
100
MHz
—
1060
—
µA
—
600
—
µA
2.0
—
4.0
MHz
Notes
2, 3
640 × ffll_ref
Mid range (DRS=01)
1280 × ffll_ref
Mid-high range (DRS=10)
1920 × ffll_ref
High range (DRS=11)
2560 × ffll_ref
fdco_t_DMX3 DCO output
frequency
2
Low range (DRS=00)
4, 5
732 × ffll_ref
Mid range (DRS=01)
1464 × ffll_ref
Mid-high range (DRS=10)
2197 × ffll_ref
High range (DRS=11)
2929 × ffll_ref
Jcyc_fll
FLL period jitter
• fVCO = 48 MHz
• fVCO = 98 MHz
tfll_acquire
FLL target frequency acquisition time
ps
6
PLL
fvco
VCO operating frequency
Ipll
PLL operating current
• PLL @ 96 MHz (fosc_hi_1 = 8 MHz, fpll_ref =
2 MHz, VDIV multiplier = 48)
Ipll
PLL operating current
• PLL @ 48 MHz (fosc_hi_1 = 8 MHz, fpll_ref =
2 MHz, VDIV multiplier = 24)
fpll_ref
PLL reference frequency range
Jcyc_pll
PLL period jitter (RMS)
7
7
8
• fvco = 48 MHz
—
120
—
ps
• fvco = 100 MHz
—
50
—
ps
Table continues on the next page...
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
26
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
Table 13. MCG specifications (continued)
Symbol
Description
Min.
Jacc_pll
PLL accumulated jitter over 1µs (RMS)
Typ.
Max.
Unit
Notes
8
• fvco = 48 MHz
—
1350
—
ps
• fvco = 100 MHz
—
600
—
ps
Dlock
Lock entry frequency tolerance
± 1.49
—
± 2.98
%
Dunl
Lock exit frequency tolerance
± 4.47
—
± 5.97
%
tpll_lock
Lock detector detection time
—
—
150 × 10-6
+ 1075(1/
fpll_ref)
s
9
1. This parameter is measured with the internal reference (slow clock) being used as a reference to the FLL (FEI clock
mode).
2. These typical values listed are with the slow internal reference clock (FEI) using factory trim and DMX32=0.
3. The resulting system clock frequencies should not exceed their maximum specified values. The DCO frequency deviation
(Δfdco_t) over voltage and temperature should be considered.
4. These typical values listed are with the slow internal reference clock (FEI) using factory trim and DMX32=1.
5. The resulting clock frequency must not exceed the maximum specified clock frequency of the device.
6. This specification applies to any time the FLL reference source or reference divider is changed, trim value is changed,
DMX32 bit is changed, DRS bits are changed, or changing from FLL disabled (BLPE, BLPI) to FLL enabled (FEI, FEE,
FBE, FBI). If a crystal/resonator is being used as the reference, this specification assumes it is already running.
7. Excludes any oscillator currents that are also consuming power while PLL is in operation.
8. This specification was obtained using a Freescale developed PCB. PLL jitter is dependent on the noise characteristics of
each PCB and results will vary.
9. This specification applies to any time the PLL VCO divider or reference divider is changed, or changing from PLL disabled
(BLPE, BLPI) to PLL enabled (PBE, PEE). If a crystal/resonator is being used as the reference, this specification assumes
it is already running.
6.3.2 Oscillator electrical specifications
This section provides the electrical characteristics of the module.
6.3.2.1
Symbol
VDD
IDDOSC
Oscillator DC electrical specifications
Table 14. Oscillator DC electrical specifications
Description
Min.
Typ.
Max.
Unit
Supply voltage
1.71
—
3.6
V
Supply current — low-power mode (HGO=0)
Notes
1
• 32 kHz
—
500
—
nA
• 4 MHz
—
200
—
μA
• 8 MHz (RANGE=01)
—
300
—
μA
• 16 MHz
—
950
—
μA
• 24 MHz
—
1.2
—
mA
• 32 MHz
—
1.5
—
mA
Table continues on the next page...
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc.
27
Peripheral operating requirements and behaviors
Table 14. Oscillator DC electrical specifications (continued)
Symbol
Description
Min.
IDDOSC
Supply current — high gain mode (HGO=1)
Typ.
Max.
Unit
Notes
1
• 32 kHz
—
25
—
μA
• 4 MHz
—
400
—
μA
• 8 MHz (RANGE=01)
—
500
—
μA
• 16 MHz
—
2.5
—
mA
• 24 MHz
—
3
—
mA
• 32 MHz
—
4
—
mA
Cx
EXTAL load capacitance
—
—
—
2, 3
Cy
XTAL load capacitance
—
—
—
2, 3
RF
Feedback resistor — low-frequency, low-power
mode (HGO=0)
—
—
—
MΩ
Feedback resistor — low-frequency, high-gain
mode (HGO=1)
—
10
—
MΩ
Feedback resistor — high-frequency, low-power
mode (HGO=0)
—
—
—
MΩ
Feedback resistor — high-frequency, high-gain
mode (HGO=1)
—
1
—
MΩ
Series resistor — low-frequency, low-power
mode (HGO=0)
—
—
—
kΩ
Series resistor — low-frequency, high-gain mode
(HGO=1)
—
200
—
kΩ
Series resistor — high-frequency, low-power
mode (HGO=0)
—
—
—
kΩ
—
0
—
kΩ
Peak-to-peak amplitude of oscillation (oscillator
mode) — low-frequency, low-power mode
(HGO=0)
—
0.6
—
V
Peak-to-peak amplitude of oscillation (oscillator
mode) — low-frequency, high-gain mode
(HGO=1)
—
VDD
—
V
Peak-to-peak amplitude of oscillation (oscillator
mode) — high-frequency, low-power mode
(HGO=0)
—
0.6
—
V
Peak-to-peak amplitude of oscillation (oscillator
mode) — high-frequency, high-gain mode
(HGO=1)
—
VDD
—
V
RS
2, 4
Series resistor — high-frequency, high-gain
mode (HGO=1)
Vpp5
1.
2.
3.
4.
VDD=3.3 V, Temperature =25 °C
See crystal or resonator manufacturer's recommendation
Cx,Cy can be provided by using either the integrated capacitors or by using external components.
When low power mode is selected, RF is integrated and must not be attached externally.
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
28
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
5. The EXTAL and XTAL pins should only be connected to required oscillator components and must not be connected to any
other devices.
6.3.2.2
Symbol
Oscillator frequency specifications
Table 15. Oscillator frequency specifications
Description
Min.
Typ.
Max.
Unit
fosc_lo
Oscillator crystal or resonator frequency — low
frequency mode (MCG_C2[RANGE]=00)
32
—
40
kHz
fosc_hi_1
Oscillator crystal or resonator frequency — high
frequency mode (low range)
(MCG_C2[RANGE]=01)
3
—
8
MHz
fosc_hi_2
Oscillator crystal or resonator frequency — high
frequency mode (high range)
(MCG_C2[RANGE]=1x)
8
—
32
MHz
fec_extal
Input clock frequency (external clock mode)
—
—
50
MHz
tdc_extal
Input clock duty cycle (external clock mode)
40
50
60
%
Crystal startup time — 32 kHz low-frequency,
low-power mode (HGO=0)
—
750
—
ms
Crystal startup time — 32 kHz low-frequency,
high-gain mode (HGO=1)
—
250
—
ms
Crystal startup time — 8 MHz high-frequency
(MCG_C2[RANGE]=01), low-power mode
(HGO=0)
—
0.6
—
ms
Crystal startup time — 8 MHz high-frequency
(MCG_C2[RANGE]=01), high-gain mode
(HGO=1)
—
1
—
ms
tcst
Notes
1, 2
3, 4
1. Other frequency limits may apply when external clock is being used as a reference for the FLL or PLL.
2. When transitioning from FBE to FEI mode, restrict the frequency of the input clock so that, when it is divided by FRDIV, it
remains within the limits of the DCO input clock frequency.
3. Proper PC board layout procedures must be followed to achieve specifications.
4. Crystal startup time is defined as the time between the oscillator being enabled and the OSCINIT bit in the MCG_S register
being set.
6.3.3 32 kHz Oscillator Electrical Characteristics
This section describes the module electrical characteristics.
6.3.3.1
Symbol
VBAT
RF
32 kHz oscillator DC electrical specifications
Table 16. 32kHz oscillator DC electrical specifications
Description
Min.
Typ.
Max.
Unit
Supply voltage
1.71
—
3.6
V
—
100
—
MΩ
Internal feedback resistor
Table continues on the next page...
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc.
29
Peripheral operating requirements and behaviors
Table 16. 32kHz oscillator DC electrical specifications (continued)
Symbol
Description
Min.
Typ.
Max.
Unit
Cpara
Parasitical capacitance of EXTAL32 and XTAL32
—
5
7
pF
Vpp1
Peak-to-peak amplitude of oscillation
—
0.6
—
V
1. When a crystal is being used with the 32 kHz oscillator, the EXTAL32 and XTAL32 pins should only be connected to
required oscillator components and must not be connected to any other devices.
6.3.3.2
Symbol
32kHz oscillator frequency specifications
Table 17. 32kHz oscillator frequency specifications
Min.
Typ.
Max.
Unit
Oscillator crystal
—
32.768
—
kHz
Crystal start-up time
—
1000
—
ms
1
fec_extal32
Externally provided input clock frequency
—
32.768
—
kHz
2
vec_extal32
Externally provided input clock amplitude
700
—
VBAT
mV
2, 3
fosc_lo
tstart
Description
Notes
1. Proper PC board layout procedures must be followed to achieve specifications.
2. This specification is for an externally supplied clock driven to EXTAL32 and does not apply to any other clock input. The
oscillator remains enabled and XTAL32 must be left unconnected.
3. The parameter specified is a peak-to-peak value and VIH and VIL specifications do not apply. The voltage of the applied
clock must be within the range of VSS to VBAT.
6.4 Memories and memory interfaces
6.4.1 Flash electrical specifications
This section describes the electrical characteristics of the flash memory module.
6.4.1.1
Flash timing specifications — program and erase
The following specifications represent the amount of time the internal charge pumps are
active and do not include command overhead.
Table 18. NVM program/erase timing specifications
Symbol
Description
thvpgm4
thversscr
thversblk32k
Min.
Typ.
Max.
Unit
Longword Program high-voltage time
—
7.5
18
μs
Sector Erase high-voltage time
—
13
113
ms
1
Erase Block high-voltage time for 32 KB
—
52
452
ms
1
—
52
452
ms
1
thversblk128k Erase Block high-voltage time for 128 KB
Notes
1. Maximum time based on expectations at cycling end-of-life.
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
30
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
6.4.1.2
Symbol
Flash timing specifications — commands
Table 19. Flash command timing specifications
Description
Min.
Typ.
Max.
Unit
Notes
Read 1s Block execution time
trd1blk32k
• 32 KB data flash
—
—
0.5
ms
trd1blk128k
• 128 KB program flash
—
—
1.7
ms
trd1sec1k
Read 1s Section execution time (flash sector)
—
—
60
μs
1
tpgmchk
Program Check execution time
—
—
45
μs
1
trdrsrc
Read Resource execution time
—
—
30
μs
1
tpgm4
Program Longword execution time
—
65
145
μs
Erase Flash Block execution time
2
tersblk32k
• 32 KB data flash
—
55
465
ms
tersblk128k
• 128 KB program flash
—
61
495
ms
—
14
114
ms
tersscr
Erase Flash Sector execution time
2
Program Section execution time
tpgmsec512
• 512 B flash
—
4.7
—
ms
tpgmsec1k
• 1 KB flash
—
9.3
—
ms
trd1all
Read 1s All Blocks execution time
—
—
1.8
ms
trdonce
Read Once execution time
—
—
25
μs
Program Once execution time
—
65
—
μs
tersall
Erase All Blocks execution time
—
115
1000
ms
2
tvfykey
Verify Backdoor Access Key execution time
—
—
30
μs
1
—
70
—
ms
tpgmonce
1
Program Partition for EEPROM execution time
tpgmpart32k
• 32 KB FlexNVM
Set FlexRAM Function execution time:
tsetramff
• Control Code 0xFF
—
50
—
μs
tsetram8k
• 8 KB EEPROM backup
—
0.3
0.5
ms
tsetram32k
• 32 KB EEPROM backup
—
0.7
1.0
ms
Byte-write to FlexRAM for EEPROM operation
teewr8bers
Byte-write to erased FlexRAM location execution
time
—
175
260
μs
3
Byte-write to FlexRAM execution time:
teewr8b8k
• 8 KB EEPROM backup
—
340
1700
μs
teewr8b16k
• 16 KB EEPROM backup
—
385
1800
μs
teewr8b32k
• 32 KB EEPROM backup
—
475
2000
μs
Table continues on the next page...
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc.
31
Peripheral operating requirements and behaviors
Table 19. Flash command timing specifications (continued)
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
Word-write to FlexRAM for EEPROM operation
teewr16bers
Word-write to erased FlexRAM location
execution time
—
175
260
μs
Word-write to FlexRAM execution time:
teewr16b8k
• 8 KB EEPROM backup
—
340
1700
μs
teewr16b16k
• 16 KB EEPROM backup
—
385
1800
μs
teewr16b32k
• 32 KB EEPROM backup
—
475
2000
μs
Longword-write to FlexRAM for EEPROM operation
teewr32bers
Longword-write to erased FlexRAM location
execution time
—
360
540
μs
Longword-write to FlexRAM execution time:
teewr32b8k
• 8 KB EEPROM backup
—
545
1950
μs
teewr32b16k
• 16 KB EEPROM backup
—
630
2050
μs
teewr32b32k
• 32 KB EEPROM backup
—
810
2250
μs
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3
Flash high voltage current behaviors
Table 20. Flash high voltage current behaviors
Symbol
Description
IDD_PGM
IDD_ERS
6.4.1.4
Symbol
Min.
Typ.
Max.
Unit
Average current adder during high voltage
flash programming operation
—
2.5
6.0
mA
Average current adder during high voltage
flash erase operation
—
1.5
4.0
mA
Reliability specifications
Table 21. NVM reliability specifications
Description
Min.
Typ.1
Max.
Unit
Notes
Program Flash
tnvmretp10k
Data retention after up to 10 K cycles
5
50
—
years
tnvmretp1k
Data retention after up to 1 K cycles
20
100
—
years
nnvmcycp
Cycling endurance
10 K
50 K
—
cycles
50
—
years
2
Data Flash
tnvmretd10k
Data retention after up to 10 K cycles
5
Table continues on the next page...
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
32
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
Table 21. NVM reliability specifications (continued)
Symbol
Description
tnvmretd1k
Data retention after up to 1 K cycles
nnvmcycd
Cycling endurance
Min.
Typ.1
Max.
Unit
20
100
—
years
10 K
50 K
—
cycles
Notes
2
FlexRAM as EEPROM
tnvmretee100 Data retention up to 100% of write endurance
5
50
—
years
tnvmretee10
20
100
—
years
Data retention up to 10% of write endurance
Write endurance
3
nnvmwree16
• EEPROM backup to FlexRAM ratio = 16
35 K
175 K
—
writes
nnvmwree128
• EEPROM backup to FlexRAM ratio = 128
315 K
1.6 M
—
writes
nnvmwree512
• EEPROM backup to FlexRAM ratio = 512
1.27 M
6.4 M
—
writes
nnvmwree4k
• EEPROM backup to FlexRAM ratio = 4096
10 M
50 M
—
writes
• EEPROM backup to FlexRAM ratio = 8192
20 M
100 M
—
writes
nnvmwree8k
1. Typical data retention values are based on measured response accelerated at high temperature and derated to a constant
25°C use profile. Engineering Bulletin EB618 does not apply to this technology. Typical endurance defined in Engineering
Bulletin EB619.
2. Cycling endurance represents number of program/erase cycles at -40°C ≤ Tj ≤ 125°C.
3. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling
endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup. Minimum and typical values
assume all byte-writes to FlexRAM.
6.4.1.5
Write endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
The bytes not assigned to data flash via the FlexNVM partition code are used by the flash
memory module to obtain an effective endurance increase for the EEPROM data. The
built-in EEPROM record management system raises the number of program/erase cycles
that can be attained prior to device wear-out by cycling the EEPROM data through a
larger EEPROM NVM storage space.
While different partitions of the FlexNVM are available, the intention is that a single
choice for the FlexNVM partition code and EEPROM data set size is used throughout the
entire lifetime of a given application. The EEPROM endurance equation and graph
shown below assume that only one configuration is ever used.
Writes_FlexRAM =
EEPROM – 2 × EEESIZE
EEESIZE
× Write_efficiency × nnvmcycd
where
• Writes_FlexRAM — minimum number of writes to each FlexRAM location
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc.
33
Peripheral operating requirements and behaviors
• EEPROM — allocated FlexNVM based on DEPART; entered with the Program
Partition command
• EEESIZE — allocated FlexRAM based on DEPART; entered with the Program
Partition command
• Write_efficiency —
• 0.25 for 8-bit writes to FlexRAM
• 0.50 for 16-bit or 32-bit writes to FlexRAM
• nnvmcycd — data flash cycling endurance (the following graph assumes 10,000
cycles)
Figure 8. EEPROM backup writes to FlexRAM
6.4.2 EzPort Switching Specifications
Table 22. EzPort switching specifications
Num
Description
Min.
Max.
Unit
Operating voltage
1.71
3.6
V
Table continues on the next page...
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
34
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
Table 22. EzPort switching specifications (continued)
Num
Description
Min.
Max.
Unit
EP1
EZP_CK frequency of operation (all commands except
READ)
—
fSYS/2
MHz
EP1a
EZP_CK frequency of operation (READ command)
—
fSYS/8
MHz
EP2
EZP_CS negation to next EZP_CS assertion
2 x tEZP_CK
—
ns
EP3
EZP_CS input valid to EZP_CK high (setup)
5
—
ns
EP4
EZP_CK high to EZP_CS input invalid (hold)
5
—
ns
EP5
EZP_D input valid to EZP_CK high (setup)
2
—
ns
EP6
EZP_CK high to EZP_D input invalid (hold)
5
—
ns
EP7
EZP_CK low to EZP_Q output valid
—
17
ns
EP8
EZP_CK low to EZP_Q output invalid (hold)
0
—
ns
EP9
EZP_CS negation to EZP_Q tri-state
—
12
ns
EZP_CK
EP3
EP2
EP4
EZP_CS
EP9
EP7
EP8
EZP_Q (output)
EP5
EP6
EZP_D (input)
Figure 9. EzPort Timing Diagram
6.5 Security and integrity modules
There are no specifications necessary for the device's security and integrity modules.
6.6 Analog
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc.
35
Peripheral operating requirements and behaviors
6.6.1 ADC electrical specifications
The 16-bit accuracy specifications listed in Table 23 and Table 24 are achievable on the
differential pins ADCx_DP0, ADCx_DM0.
All other ADC channels meet the 13-bit differential/12-bit single-ended accuracy
specifications.
6.6.1.1
16-bit ADC operating conditions
Table 23. 16-bit ADC operating conditions
Description
Conditions
Min.
Typ.1
Max.
Unit
VDDA
Supply voltage
Absolute
1.71
—
3.6
V
ΔVDDA
Supply voltage
Delta to VDD (VDDVDDA)
-100
0
+100
mV
2
ΔVSSA
Ground voltage
Delta to VSS (VSSVSSA)
-100
0
+100
mV
2
VREFH
ADC reference
voltage high
1.13
VDDA
VDDA
V
VREFL
Reference
voltage low
VSSA
VSSA
VSSA
V
VADIN
Input voltage
VREFL
—
VREFH
V
CADIN
Input
capacitance
• 16 bit modes
—
8
10
pF
• 8/10/12 bit
modes
—
4
5
—
2
5
Symbol
RADIN
RAS
fADCK
fADCK
Crate
Input resistance
Analog source
resistance
12 bit modes
ADC conversion
clock frequency
≤ bit modes
ADC conversion
clock frequency
16 bit modes
ADC conversion
rate
≤ bit modes
Notes
kΩ
3
fADCK < 4MHz
—
—
5
kΩ
4
1.0
—
18.0
MHz
4
2.0
—
12.0
MHz
5
No ADC hardware
averaging
20.000
—
818.330
Ksps
Continuous
conversions enabled,
subsequent conversion
time
Table continues on the next page...
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
36
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
Table 23. 16-bit ADC operating conditions (continued)
Symbol
Crate
Description
Conditions
ADC conversion
rate
16 bit modes
Typ.1
Min.
Max.
Unit
Notes
5
No ADC hardware
averaging
37.037
—
461.467
Ksps
Continuous
conversions enabled,
subsequent conversion
time
1. Typical values assume VDDA = 3.0 V, Temp = 25°C, fADCK = 1.0 MHz unless otherwise stated. Typical values are for
reference only and are not tested in production.
2. DC potential difference.
3. This resistance is external to MCU. The analog source resistance should be kept as low as possible in order to achieve the
best results. The results in this datasheet were derived from a system which has
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