NXP Semiconductors
Data Sheet: Technical Data
Document Number: KL03P24M48SF0
Rev. 5.1 08/2017
Kinetis KL03 32 KB Flash
48 MHz Cortex-M0+ Based Microcontroller
Supports ultra low power 48 MHz devices with up to 32 KB
Flash.
World's smallest MCU based on ARM® technology. Ideal
solution for Internet of Things edge nodes design with ultra small
form factor and ultra low power consumption. The products
offers:
• Tiny footprint packages, including 1.6 x 2.0 mm2 WLCSP
• Run power consumption as low as 50 µA/MHz
• Static power consumption as low as 2.2 µA with 7.5 µs
wakeup time for full retention and lowest static mode down
to 77 nA in deep sleep
• Highly integrated peripherals, including new boot ROM and
high accurate internal voltage reference, etc
Core
• ARM® Cortex®-M0+ core up to 48 MHz
Memories
• Up to 32 KB program flash memory
• 2 KB SRAM
• 8 KB ROM with build-in bootloader
• 16 bytes regfile
System peripherals
• Nine low-power modes to provide power optimization
based on application requirements
• COP Software watchdog
• Low-leakage wakeup unit
• SWD debug interface and Micro Trace Buffer
• Bit Manipulation Engine
Clocks
• 48 MHz high accuracy internal reference clock
• 8/2 MHz low power internal reference clock
• 32 kHz to 40 kHz crystal oscillator
• 1 kHz LPO clock
Operating Characteristics
• Voltage range: 1.71 to 3.6 V
• Flash write voltage range: 1.71 to 3.6 V
MKL03ZxxVFG4
MKL03ZxxVFK4
MKL03Z32CAF4R
MKL03Z32CBF4R
16-pin QFN (FG)
3 x 3 x 0.65 Pitch 0.5
mm
24-pin QFN (FK)
4 x 4 x 0.65 Pitch 0.5
mm
20 WLCSP
2 x 1.61 x 0.56 Pitch 0.4 mm(AF) 2 x 1.61 x
0.32 Pitch 0.4 mm (BF)
• Temperature range (ambient): -40 to 105°C for QFN
packages; -40 to 85°C for WLCSP packages
Human-machine interface
• General-purpose input/output up to 22
Communication interfaces
• One 8-bit SPI module
• One LPUART module
• One I2C module supporting up to 1 Mbit/s, with
double buffer
Analog Modules
• 12-bit SAR ADC with internal voltage reference, up
to 818 ksps and 7 channels
• High-speed analog comparator containing a 6-bit
DAC and programmable reference input
• 1.2 V voltage reference (Vref)
Timers
• Two 2-channel Timer/PWM modules
• One low-power timer
• Real time clock
Security and integrity modules
• 80-bit unique identification number per chip
NXP reserves the right to change the production detail specifications as may be
required to permit improvements in the design of its products.
Ordering Information1
Part Number
Memory
Maximum number of I\O's
Flash (KB)
SRAM (KB)
MKL03Z8VFG4(R)
8
2
14
MKL03Z16VFG4(R)
16
2
14
MKL03Z32VFG4(R)
32
2
14
MKL03Z32CAF4R
32
2
18
MKL03Z32CBF4R
32
2
18
MKL03Z8VFK4(R)
8
2
22
MKL03Z16VFK4(R)
16
2
22
MKL03Z32VFK4(R)
32
2
22
1. To confirm current availability of ordererable part numbers, go to http://www.nxp.com and perform a part number search.
Related Resources
Type
Description
Resource
Selector Guide
The Solution Advisor is a web-based tool that features interactive
application wizards and a dynamic product selector.
Solution Advisor
Product Brief
The Product Brief contains concise overview/summary information to KL03PB1
enable quick evaluation of a device for design suitability.
Reference
Manual
The Reference Manual contains a comprehensive description of the
structure and function (operation) of a device.
KL03P24M48SF0RM1
Data Sheet
The Data Sheet includes electrical characteristics and signal
connections.
KL03P24M48SF01
Chip Errata
The chip mask set Errata provides additional or corrective
information for a particular device mask set.
KL03Z_xN86K2
Package
drawing
Package dimensions are provided in package drawings.
QFN 16-pin: 98ASA00525D1
QFN 24-pin: 98ASA00602D1
WLCSP 20-pin: 98ASA00676D1
WLCSP 20-pin (ultra thin):
98ASA00964D1
1. To find the associated resource, go to http://www.nxp.com and perform a search using this term.
2. To find the associated resource, go to http://www.nxp.com and perform a search using this term with the “x” replaced by
the revision of the device you are using.
Figure 1 shows the functional modules in the chip.
2
NXP Semiconductors
Kinetis KL03 32 KB Flash, Rev. 5.1 08/2017
Kinetis KL03 Family
ARM Cortex-M0+
Core
System
Internal
watchdog
SWD
interfaces
BME
Interrupt
controller
Memories and
Memory Interfaces
Program
flash
RAM
ROM
Clocks
Low
frequency
oscillator
Internal
reference
clocks
LPO
MTB
Register
file
Security
Analog
Timers
Unique ID
12-bit ADC
x1
Timers
2x2ch
and Integrity
Analog
comparator
with
6-bit DAC
x1
Low Power
Timer
Communication
Interfaces
2
I C
x1
Human-Machine
Interface (HMI)
GPIOs
with
interrupt
Low power
UART
x1
RTC
VREF
SPI
x1
Figure 1. Functional block diagram
Kinetis KL03 32 KB Flash, Rev. 5.1 08/2017
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NXP Semiconductors
Table of Contents
1 Ratings.................................................................................... 5
1.1 Thermal handling ratings................................................. 5
1.2 Moisture handling ratings................................................ 5
1.3 ESD handling ratings....................................................... 5
1.4 Voltage and current operating ratings............................. 6
2 General................................................................................... 6
2.1 AC electrical characteristics.............................................6
2.2 Nonswitching electrical specifications..............................7
2.2.1 Voltage and current operating requirements....... 7
2.2.2 LVD and POR operating requirements................7
2.2.3 Voltage and current operating behaviors.............8
2.2.4 Power mode transition operating behaviors........ 9
2.2.5
2.2.6
2.2.7
Power consumption operating behaviors............ 10
EMC radiated emissions operating behaviors..... 24
EMC Radiated Emissions Web Search
Procedure boilerplate.......................................... 25
2.2.8 Capacitance attributes.........................................25
2.3 Switching specifications...................................................25
2.3.1 Device clock specifications..................................25
2.3.2 General switching specifications......................... 26
2.4 Thermal specifications..................................................... 26
2.4.1 Thermal operating requirements......................... 26
2.4.2 Thermal attributes................................................27
3 Peripheral operating requirements and behaviors.................. 27
3.1 Core modules.................................................................. 27
3.1.1 SWD electricals .................................................. 28
3.2 System modules.............................................................. 29
3.3 Clock modules................................................................. 29
3.3.1 MCG-Lite specifications.......................................29
3.3.2 Oscillator electrical specifications........................30
3.4 Memories and memory interfaces................................... 31
3.4.1 Flash electrical specifications.............................. 31
3.5 Security and integrity modules........................................ 33
4
NXP Semiconductors
4
5
6
7
8
9
3.6 Analog............................................................................. 33
3.6.1 ADC electrical specifications............................... 33
3.6.2 CMP and 6-bit DAC electrical specifications....... 37
3.6.3 Voltage reference electrical specifications.......... 39
3.7 Timers..............................................................................40
3.8 Communication interfaces............................................... 40
3.8.1 SPI switching specifications................................ 41
3.8.2 Inter-Integrated Circuit Interface (I2C) timing...... 45
3.8.3 UART...................................................................47
Dimensions............................................................................. 47
4.1 Obtaining package dimensions....................................... 47
Pinout...................................................................................... 48
5.1 KL03 signal multiplexing and pin assignments................ 48
5.2 KL03 pinouts....................................................................49
Ordering parts......................................................................... 51
6.1 Determining valid orderable parts....................................51
Part identification.....................................................................51
7.1 Description.......................................................................51
7.2 Format............................................................................. 52
7.3 Fields............................................................................... 52
7.4 Example...........................................................................52
Terminology and guidelines.................................................... 53
8.1 Definition: Operating requirement....................................53
8.2 Definition: Operating behavior......................................... 53
8.3 Definition: Attribute.......................................................... 54
8.4 Definition: Rating............................................................. 54
8.5 Result of exceeding a rating............................................ 55
8.6 Relationship between ratings and operating
requirements....................................................................55
8.7 Guidelines for ratings and operating requirements..........55
8.8 Definition: Typical value...................................................56
8.9 Typical value conditions.................................................. 57
Revision history.......................................................................57
Kinetis KL03 32 KB Flash, Rev. 5.1 08/2017
Ratings
1 Ratings
1.1 Thermal handling ratings
Table 1. Thermal handling ratings
Symbol
Description
Min.
Max.
Unit
Notes
TSTG
Storage temperature
–55
150
°C
1
TSDR
Solder temperature, lead-free
—
260
°C
2
1. Determined according to JEDEC Standard JESD22-A103, High Temperature Storage Life.
2. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic
Solid State Surface Mount Devices.
1.2 Moisture handling ratings
Table 2. QFN packages moisture handling ratings
Symbol
MSL
Description
Moisture sensitivity level
Min.
Max.
Unit
Notes
—
3
—
1
1. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic
Solid State Surface Mount Devices.
Table 3. WLCSP packages moisture handling ratings
Symbol
MSL
Description
Moisture sensitivity level
Min.
Max.
Unit
Notes
—
1
—
1
1. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic
Solid State Surface Mount Devices.
1.3 ESD handling ratings
Table 4. ESD handling ratings
Symbol
Description
Min.
Max.
Unit
Notes
VHBM
Electrostatic discharge voltage, human body model
–2000
+2000
V
1
VCDM
Electrostatic discharge voltage, charged-device
model
–500
+500
V
2
Latch-up current at ambient temperature of 105 °C
–100
+100
mA
3
ILAT
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NXP Semiconductors
General
1. Determined according to JEDEC Standard JESD22-A114, Electrostatic Discharge (ESD) Sensitivity Testing Human
Body Model (HBM).
2. Determined according to JEDEC Standard JESD22-C101, Field-Induced Charged-Device Model Test Method for
Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components.
3. Determined according to JEDEC Standard JESD78, IC Latch-Up Test.
1.4 Voltage and current operating ratings
Table 5. Voltage and current operating ratings
Symbol
Description
Min.
Max.
Unit
VDD
Digital supply voltage
–0.3
3.8
V
IDD
Digital supply current
—
120
mA
VIO
IO pin input voltage
–0.3
VDD + 0.3
V
Instantaneous maximum current single pin limit (applies to
all port pins)
–25
25
mA
VDD – 0.3
VDD + 0.3
V
ID
VDDA
Analog supply voltage
2 General
2.1 AC electrical characteristics
Unless otherwise specified, propagation delays are measured from the 50% to the 50%
point, and rise and fall times are measured at the 20% and 80% points, as shown in the
following figure.
VIH
Input Signal
Low
High
80%
50%
20%
Midpoint1
Fall Time
VIL
Rise Time
The midpoint is VIL + (VIH - VIL) / 2
Figure 2. Input signal measurement reference
All digital I/O switching characteristics, unless otherwise specified, assume the output
pins have the following characteristics.
• CL=30 pF loads
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NXP Semiconductors
Kinetis KL03 32 KB Flash, Rev. 5.1 08/2017
General
• Slew rate disabled
• Normal drive strength
2.2 Nonswitching electrical specifications
2.2.1 Voltage and current operating requirements
Table 6. Voltage and current operating requirements
Symbol
Description
Min.
Max.
Unit
VDD
Supply voltage
1.71
3.6
V
VDDA
Analog supply voltage
Notes
1.71
3.6
V
—
VDD – VDDA VDD-to-VDDA differential voltage
–0.1
0.1
V
—
VSS – VSSA VSS-to-VSSA differential voltage
–0.1
0.1
V
—
VIH
VIL
Input high voltage
• 2.7 V ≤ VDD ≤ 3.6 V
0.7 × VDD
—
V
• 1.7 V ≤ VDD ≤ 2.7 V
0.75 × VDD
—
V
Input low voltage
—
0.35 × VDD
V
• 1.7 V ≤ VDD ≤ 2.7 V
—
0.3 × VDD
V
0.06 × VDD
—
V
–5
—
mA
Input hysteresis
IICIO
IO pin negative DC injection current—single pin
• VIN < VSS–0.3V
Contiguous pin DC injection current —regional limit,
includes sum of negative injection currents of 16
contiguous pins
• Negative current injection
VRAM
—
• 2.7 V ≤ VDD ≤ 3.6 V
VHYS
IICcont
—
VDD voltage required to retain RAM
—
1
—
–25
—
mA
1.2
—
V
—
1. All I/O pins are internally clamped to VSS through a ESD protection diode. There is no diode connection to VDD. If VIN
greater than VIO_MIN (= VSS-0.3 V) is observed, then there is no need to provide current limiting resistors at the pads. If
this limit cannot be observed then a current limiting resistor is required. The negative DC injection current limiting
resistor is calculated as R = (VIO_MIN - VIN)/|IICIO|.
Kinetis KL03 32 KB Flash, Rev. 5.1 08/2017
7
NXP Semiconductors
General
2.2.2 LVD and POR operating requirements
Table 7. VDD supply LVD and POR operating requirements
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
VPOR
Falling VDD POR detect voltage
0.8
1.1
1.5
V
—
VLVDH
Falling low-voltage detect threshold — high
range (LVDV = 01)
2.48
2.56
2.64
V
—
Low-voltage warning thresholds — high range
VLVW1H
• Level 1 falling (LVWV = 00)
VLVW2H
• Level 2 falling (LVWV = 01)
VLVW3H
• Level 3 falling (LVWV = 10)
VLVW4H
• Level 4 falling (LVWV = 11)
VHYSH
Low-voltage inhibit reset/recover hysteresis —
high range
VLVDL
Falling low-voltage detect threshold — low
range (LVDV=00)
1
2.62
2.70
2.78
V
2.72
2.80
2.88
V
2.82
2.90
2.98
V
2.92
3.00
3.08
V
—
±60
—
mV
—
1.54
1.60
1.66
V
—
Low-voltage warning thresholds — low range
VLVW1L
• Level 1 falling (LVWV = 00)
VLVW2L
• Level 2 falling (LVWV = 01)
VLVW3L
• Level 3 falling (LVWV = 10)
VLVW4L
• Level 4 falling (LVWV = 11)
VHYSL
Low-voltage inhibit reset/recover hysteresis —
low range
1
1.74
1.80
1.86
V
1.84
1.90
1.96
V
1.94
2.00
2.06
V
2.04
2.10
2.16
V
—
±40
—
mV
—
VBG
Bandgap voltage reference
0.97
1.00
1.03
V
—
tLPO
Internal low power oscillator period — factory
trimmed
900
1000
1100
μs
—
1. Rising thresholds are falling threshold + hysteresis voltage
2.2.3 Voltage and current operating behaviors
Table 8. Voltage and current operating behaviors
Symbol
VOH
Description
Min.
Unit
Output high voltage — Normal drive pad (except
RESET)
• 2.7 V ≤ VDD ≤ 3.6 V, IOH = –5 mA
• 1.71 V ≤ VDD ≤ 2.7 V, IOH = –2.5 mA
VOH
Max.
Notes
1, 2
VDD – 0.5
—
V
VDD – 0.5
—
V
Output high voltage — High drive pad (except
RESET)
1, 2
VDD – 0.5
—
V
VDD – 0.5
—
V
Table continues on the next page...
8
NXP Semiconductors
Kinetis KL03 32 KB Flash, Rev. 5.1 08/2017
General
Table 8. Voltage and current operating behaviors (continued)
Symbol
Description
Min.
Max.
Unit
Notes
—
100
mA
—
• 2.7 V ≤ VDD ≤ 3.6 V, IOH = –20 mA
• 1.71 V ≤ VDD ≤ 2.7 V, IOH = –10 mA
IOHT
Output high current total for all ports
VOL
Output low voltage — Normal drive pad
VOL
IOLT
1
• 2.7 V ≤ VDD ≤ 3.6 V, IOL = 5 mA
—
0.5
V
• 1.71 V ≤ VDD ≤ 2.7 V, IOL = 2.5 mA
—
0.5
V
Output low voltage — High drive pad
1
• 2.7 V ≤ VDD ≤ 3.6 V, IOL = 20 mA
—
0.5
V
• 1.71 V ≤ VDD ≤ 2.7 V, IOL = 10 mA
—
0.5
V
Output low current total for all ports
—
100
mA
—
IIN
Input leakage current (per pin) for full temperature
range
—
1
μA
3
IIN
Input leakage current (per pin) at 25 °C
—
0.025
μA
3
IIN
Input leakage current (total all pins) for full
temperature range
—
41
μA
3
IOZ
Hi-Z (off-state) leakage current (per pin)
—
1
μA
—
RPU
Internal pullup resistors
20
50
kΩ
4
1. I/O have both high drive and normal drive capability selected by the associated PTx_PCRn[DSE] control bit. All other
GPIOs are normal drive only.
2. The reset pin only contains an active pull down device when configured as the RESET signal or as a GPIO. When
configured as a GPIO output, it acts as a pseudo open drain output.
3. Measured at VDD = 3.6 V
4. Measured at VDD supply voltage = VDD min and Vinput = VSS
2.2.4 Power mode transition operating behaviors
All specifications except tPOR and VLLSx→RUN recovery times in the following
table assume this clock configuration:
• CPU and system clocks = 48 MHz
• Bus and flash clock = 24 MHz
• HIRC clock mode
VLLSx→RUN recovery uses LIRC clock mode at the default CPU and system
frequency of 8 MHz, and a bus and flash clock frequency of 4 MHz.
Kinetis KL03 32 KB Flash, Rev. 5.1 08/2017
9
NXP Semiconductors
General
Table 9. Power mode transition operating behaviors
Symbol
tPOR
Description
After a POR event, amount of time from the
point VDD reaches 1.8 V to execution of the first
instruction across the operating temperature
range of the chip.
Min.
Typ.
Max.
Unit
Note
—
—
300
μs
1
—
• VLLS0 → RUN
—
152
166
μs
—
• VLLS1 → RUN
—
152
166
μs
—
• VLLS3 → RUN
—
93
104
μs
—
• VLPS → RUN
—
7.5
8
μs
—
• STOP → RUN
—
7.5
8
μs
1. Normal boot (FTFA_FOPT[LPBOOT]=11).
2.2.5 Power consumption operating behaviors
Table 10. KL03 QFN packages power consumption operating behaviors
Symbol
IDDA
Description
Analog supply current
IDD_RUNCO Running CoreMark in flash in compute operation
mode—48M HIRC mode, 48 MHz core / 24 MHz
flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
IDD_RUNCO Running While(1) loop in flash in compute
operation mode—48M HIRC mode, 48 MHz
core / 24 MHz flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
IDD_RUN
Run mode current—48M HIRC mode, running
CoreMark in Flash all peripheral clock disable
48 MHz core/24 MHz flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
IDD_RUN
Min.
Typ.
Max.1
Unit
Notes
—
—
See note
mA
2
3
—
5.49
5.71
—
5.62
5.84
mA
3
—
5.16
5.37
—
5.27
5.48
mA
3
—
6.03
6.27
—
6.16
6.41
Run mode current—48M HIRC mode, running
CoreMark in flash all peripheral clock disable,
24 MHz core/12 MHz flash, VDD = 3.0 V
mA
3
Table continues on the next page...
10
NXP Semiconductors
Kinetis KL03 32 KB Flash, Rev. 5.1 08/2017
General
Table 10. KL03 QFN packages power consumption operating behaviors (continued)
Symbol
IDD_RUN
Min.
Typ.
Max.1
Unit
• at 25 °C
—
3.71
3.86
mA
• at 105 °C
—
3.81
3.96
Description
Run mode current—48M HIRC mode, running
CoreMark in Flash all peripheral clock disable
12 MHz core/6 MHz flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
IDD_RUN
Run mode current—48M HIRC mode, running
CoreMark in Flash all peripheral clock enable 48
MHz core/24 MHz flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
IDD_RUN
Run mode current—48M HIRC mode, running
While(1) loop in flash all peripheral clock
disable, 48 MHz core/24 MHz flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
IDD_RUN
Run mode current—48M HIRC mode, running
While(1) loop in Flash all peripheral clock
disable, 24 MHz core/12 MHz flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
IDD_RUN
Run mode current—48M HIRC mode, Running
While(1) loop in Flash all peripheral clock
disable, 12 MHz core/6 MHz flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
IDD_RUN
Run mode current—48M HIRC mode, Running
While(1) loop in Flash all peripheral clock
enable, 48 MHz core/24 MHz flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
IDD_RUN
Run mode current—48M HIRC mode, running
While(1) loop in SRAM all peripheral clock
disable, 48 MHz core/24 MHz flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
IDD_RUN
Run mode current—48M HIRC mode, running
While(1) loop in SRAM all peripheral clock
enable, 48 MHz core/24 MHz flash, VDD = 3.0 V
Notes
3
—
2.47
2.57
—
2.58
2.68
mA
3
—
6.43
6.69
—
6.56
6.82
mA
—
—
5.71
5.94
—
5.82
6.05
mA
—
—
3.3
3.43
—
3.4
3.54
mA
—
—
2.28
2.37
—
2.38
2.48
mA
—
—
6.1
6.34
—
6.22
6.47
mA
—
—
3.14
3.23
—
3.27
3.36
mA
—
—
3.54
3.63
—
3.67
3.76
mA
Table continues on the next page...
Kinetis KL03 32 KB Flash, Rev. 5.1 08/2017
11
NXP Semiconductors
General
Table 10. KL03 QFN packages power consumption operating behaviors (continued)
Symbol
Description
Min.
Typ.
Max.1
Unit
Notes
• at 25 °C
• at 105 °C
IDD_VLPRCO Very-low-power run While(1) loop in flash in
compute operation mode— 2 MHz LIRC mode,
2 MHz core/0.5 MHz flash, VDD = 3.0 V
• at 25 °C
IDD_VLPRCO Very-low-power-run While(1) loop in SRAM in
compute operation mode— 8 MHz LIRC mode,
4 MHz core / 1 MHz flash, VDD = 3.0 V
• at 25 °C
IDD_VLPRCO Very-low-power run While(1) loop in SRAM in
compute operation mode:—2 MHz LIRC mode,
2 MHz core / 0.5 MHz flash, VDD = 3.0 V
• at 25 °C
IDD_VLPR
IDD_VLPR
IDD_VLPR
IDD_VLPR
IDD_VLPR
IDD_VLPR
IDD_VLPR
Very-low-power run mode current— 2 MHz
LIRC mode, While(1) loop in flash all peripheral
clock disable, 2 MHz core / 0.5 MHz flash, VDD
= 3.0 V
• at 25 °C
Very-low-power run mode current— 2 MHz
LIRC mode, While(1) loop in flash all peripheral
clock disable, 125 kHz core / 31.25 kHz flash,
VDD = 3.0 V
• at 25 °C
Very-low-power run mode current— 2 MHz
LIRC mode, While(1) loop in flash all peripheral
clock enable, 2 MHz core / 0.5 MHz flash, VDD =
3.0 V
• at 25 °C
Very-low-power run mode current— 8 MHz
LIRC mode, While(1) loop in SRAM in all
peripheral clock disable, 4 MHz core / 1 MHz
flash, VDD = 3.0 V
• at 25 °C
Very-low-power run mode current— 8 MHz
LIRC mode, While(1) loop in SRAM all
peripheral clock enable, 4 MHz core / 1 MHz
flash, VDD = 3.0 V
• at 25 °C
Very-low-power run mode current—2 MHz LIRC
mode, While(1) loop in SRAM in all peripheral
clock disable, 2 MHz core / 0.5 MHz flash, VDD
= 3.0 V
• at 25 °C
Very-low-power run mode current—2 MHz LIRC
mode, While(1) loop in SRAM all peripheral
clock disable, 125 kHz core / 31.25 kHz flash,
VDD = 3.0 V
—
—
500
750
μA
—
—
188
217
μA
—
—
82
123
μA
—
—
503
754
μA
—
—
60
90
μA
—
—
516
774
μA
—
—
209
350
μA
—
—
229
370
μA
—
—
93
140
μA
—
—
31
81
μA
Table continues on the next page...
12
NXP Semiconductors
Kinetis KL03 32 KB Flash, Rev. 5.1 08/2017
General
Table 10. KL03 QFN packages power consumption operating behaviors (continued)
Symbol
Description
Min.
Typ.
Max.1
Unit
Notes
• at 25 °C
IDD_VLPR
IDD_WAIT
IDD_WAIT
Very-low-power run mode current—2 MHz LIRC
mode, While(1) loop in SRAM all peripheral
clock enable, 2 MHz core / 0.5 MHz flash, VDD =
3.0 V
• at 25 °C
Wait mode current—core disabled, 48 MHz
system/24 MHz bus, flash disabled (flash doze
enabled), all peripheral clocks disabled,
MCG_Lite under HIRC mode, VDD = 3.0 V
Wait mode current—core disabled, 24 MHz
system/12 MHz bus, flash disabled (flash doze
enabled), all peripheral clocks disabled,
MCG_Lite under HIRC mode, VDD = 3.0 V
—
—
103
154
μA
—
—
1.4
1.94
mA
—
—
1.02
1.24
mA
IDD_VLPW
Very-low-power wait mode current, core
disabled, 4 MHz system/ 1 MHz bus and flash,
all peripheral clocks disabled, VDD = 3.0 V
—
121
181
μA
—
IDD_VLPW
Very-low-power wait mode current, core
disabled, 2 MHz system/ 0.5 MHz bus and flash,
all peripheral clocks disabled, VDD = 3.0 V
—
59
97
μA
—
IDD_VLPW
Very-low-power wait mode current, core
disabled, 125 kHz system/ 31.25 kHz bus and
flash, all peripheral clocks disabled, VDD = 3.0 V
—
28
42
μA
—
IDD_PSTOP2 Partial Stop 2, core and system clock disabled,
12 MHz bus and flash, VDD = 3.0 V
—
—
1.53
2.03
mA
IDD_PSTOP2 Partial Stop 2, core and system clock disabled,
flash doze enabled, 12 MHz bus, VDD = 3.0 V
—
—
IDD_STOP
Stop mode current at 3.0 V
• at 25 °C and below
• at 85 °C
• at 105 °C
Very-low-power stop mode current at 3.0 V
• at 25 °C and below
• at 50 °C
• at 85 °C
• at 105 °C
IDD_VLPS
Very-low-power stop mode current at 1.8 V
• at 25 °C and below
• at 50 °C
1.18
mA
—
• at 50 °C
IDD_VLPS
0.881
—
158
175.7
—
164
179.48
—
187
199.54
—
219
236.43
μA
—
—
2.2
2.71
—
3.9
6.63
—
13.9
18.25
—
28.4
36.59
μA
—
—
2.2
2.674
—
3.8
6.44
Table continues on the next page...
Kinetis KL03 32 KB Flash, Rev. 5.1 08/2017
13
NXP Semiconductors
General
Table 10. KL03 QFN packages power consumption operating behaviors (continued)
Symbol
Min.
Typ.
Max.1
Unit
• at 85 °C
—
13.2
17.37
μA
• at 105 °C
—
27.8
35.54
Description
IDD_VLLS3 Very-low-leakage stop mode 3 current, all
peripheral disable, at 3.0 V
• at 25 °C and below
• at 50 °C
• at 85 °C
• at 105 °C
IDD_VLLS3 Very-low-leakage stop mode 3 current with RTC
current, at 3.0 V
• at 25 °C and below
• at 50 °C
• at 85 °C
• at 105 °C
IDD_VLLS3 Very-low-leakage stop mode 3 current with RTC
current, at 1.8 V
• at 25 °C and below
• at 50 °C
• at 85 °C
• at 105 °C
IDD_VLLS1 Very-low-leakage stop mode 1 current all
peripheral disabled at 3.0 V
• at 25 °C and below
• at 50°C
• at 85°C
• at 105 °C
IDD_VLLS1 Very-low-leakage stop mode 1 current RTC
enabled at 3.0 V
• at 25 °C and below
• at 50°C
• at 85°C
• at 105 °C
IDD_VLLS1 Very-low-leakage stop mode 1 current RTC
enabled at 1.8 V
• at 25 °C and below
• at 50°C
• at 85°C
• at 105 °C
Notes
—
—
1.08
1.17
—
1.4
1.52
—
3.45
3.96
—
7.02
8.19
μA
—
—
1.47
1.56
—
1.82
1.94
—
3.93
4.44
—
7.6
8.77
μA
—
—
1.33
1.42
—
1.65
1.77
—
3.56
4.07
—
6.92
8.09
μA
—
—
566
690
—
788
839
—
2270
2600
—
4980
5820
nA
—
—
969
1059
—
1200
1251
—
2740
3070
—
5610
6450
nA
—
—
826
916
—
1040
1091
—
2400
2730
—
4910
5750
nA
Table continues on the next page...
14
NXP Semiconductors
Kinetis KL03 32 KB Flash, Rev. 5.1 08/2017
General
Table 10. KL03 QFN packages power consumption operating behaviors (continued)
Symbol
Description
Min.
IDD_VLLS0 Very-low-leakage stop mode 0 current all
peripheral disabled (SMC_STOPCTRL[PORPO]
= 0) at 3.0 V
• at 25 °C and below
• at 50 °C
• at 85 °C
• at 105 °C
IDD_VLLS0 Very-low-leakage stop mode 0 current all
peripheral disabled (SMC_STOPCTRL[PORPO]
= 1) at 3 V
• at 25 °C and below
• at 50 °C
• at 85 °C
• at 105 °C
Typ.
Max.1
Unit
Notes
—
—
265
373
—
467
512.9
—
1920
2256
—
4540
5395
nA
4
—
77
350
—
255
465.70
—
1640
1994
—
4080
4956
nA
1. The maximum values represent characterized results equivalent to the mean plus three times the standard deviation
(mean + 3 sigma).
2. The analog supply current is the sum of the active or disabled current for each of the analog modules on the device.
See each module's specification for its supply current.
3. MCG_Lite configured for HIRC mode. CoreMark benchmark compiled using IAR 7.10 with optimization level high,
optimized for balanced.
4. No brownout
Table 11. KL03 WLCSP package power consumption operating behaviors
Symbol
IDDA
Description
Analog supply current
IDD_RUNCO Running CoreMark in flash in compute
operation mode—48M HIRC mode, 48 MHz
core / 24 MHz flash, VDD = 3.0 V
• at 25 °C
• at 85 °C
IDD_RUNCO Running While(1) loop in flash in compute
operation mode—48M HIRC mode, 48 MHz
core / 24 MHz flash, VDD = 3.0 V
• at 25 °C
• at 85 °C
IDD_RUN
Run mode current—48M HIRC mode, running
CoreMark in Flash all peripheral clock disable
48 MHz core/24 MHz flash, VDD = 3.0 V
• at 25 °C
• at 85 °C
Min.
Typ.
Max.1
Unit
Notes
—
—
See note
mA
2
3
—
5.49
5.71
—
5.59
5.81
mA
3
—
5.16
5.37
—
5.24
5.45
mA
3
—
6.03
6.27
—
6.13
6.38
mA
Table continues on the next page...
Kinetis KL03 32 KB Flash, Rev. 5.1 08/2017
15
NXP Semiconductors
General
Table 11. KL03 WLCSP package power consumption operating behaviors (continued)
Symbol
Description
Min.
IDD_RUN
Run mode current—48M HIRC mode, running
CoreMark in flash all peripheral clock disable,
24 MHz core/12 MHz flash, VDD = 3.0 V
• at 25 °C
• at 85 °C
IDD_RUN
Run mode current—48M HIRC mode, running
CoreMark in Flash all peripheral clock disable
12 MHz core/6 MHz flash, VDD = 3.0 V
• at 25 °C
• at 85 °C
IDD_RUN
Run mode current—48M HIRC mode, running
CoreMark in Flash all peripheral clock enable
48 MHz core/24 MHz flash, VDD = 3.0 V
• at 25 °C
• at 85 °C
IDD_RUN
Run mode current—48M HIRC mode, running
While(1) loop in flash all peripheral clock
disable, 48 MHz core/24 MHz flash, VDD = 3.0
V
• at 25 °C
Typ.
Max.1
Unit
Notes
3
—
3.71
3.86
—
3.78
3.93
mA
3
—
2.47
2.57
—
2.55
2.65
mA
3
—
6.43
6.69
—
6.53
6.79
mA
—
—
5.71
5.94
—
5.79
6.02
mA
• at 85 °C
IDD_RUN
Run mode current—48M HIRC mode, running
While(1) loop in Flash all peripheral clock
disable, 24 MHz core/12 MHz flash, VDD = 3.0
V
• at 25 °C
—
—
3.3
3.43
—
3.37
3.50
mA
• at 85 °C
IDD_RUN
Run mode current—48M HIRC mode, Running
While(1) loop in Flash all peripheral clock
disable, 12 MHz core/6 MHz flash, VDD = 3.0 V
• at 25 °C
• at 85 °C
IDD_RUN
Run mode current—48M HIRC mode, Running
While(1) loop in Flash all peripheral clock
enable, 48 MHz core/24 MHz flash, VDD = 3.0
V
• at 25 °C
—
—
2.28
2.37
—
2.35
2.44
mA
—
—
6.1
6.34
—
6.19
6.44
mA
• at 85 °C
IDD_RUN
Run mode current—48M HIRC mode, running
While(1) loop in SRAM all peripheral clock
disable, 48 MHz core/24 MHz flash, VDD = 3.0
V
—
—
3.14
3.23
—
3.24
3.33
mA
Table continues on the next page...
16
NXP Semiconductors
Kinetis KL03 32 KB Flash, Rev. 5.1 08/2017
General
Table 11. KL03 WLCSP package power consumption operating behaviors (continued)
Symbol
Description
Min.
Typ.
Max.1
Unit
Notes
• at 25 °C
• at 85 °C
IDD_RUN
Run mode current—48M HIRC mode, running
While(1) loop in SRAM all peripheral clock
enable, 48 MHz core/24 MHz flash, VDD = 3.0
V
• at 25 °C
—
—
3.54
3.63
—
3.64
3.73
mA
• at 85 °C
IDD_VLPRCO Very-low-power run While(1) loop in flash in
compute operation mode— 2 MHz LIRC mode,
2 MHz core/0.5 MHz flash, VDD = 3.0 V
• at 25 °C
IDD_VLPRCO Very-low-power-run While(1) loop in SRAM in
compute operation mode— 8 MHz LIRC mode,
4 MHz core / 1 MHz flash, VDD = 3.0 V
• at 25 °C
IDD_VLPRCO Very-low-power run While(1) loop in SRAM in
compute operation mode:—2 MHz LIRC mode,
2 MHz core / 0.5 MHz flash, VDD = 3.0 V
• at 25 °C
IDD_VLPR
IDD_VLPR
IDD_VLPR
IDD_VLPR
IDD_VLPR
IDD_VLPR
Very-low-power run mode current— 2 MHz
LIRC mode, While(1) loop in flash all peripheral
clock disable, 2 MHz core / 0.5 MHz flash, VDD
= 3.0 V
• at 25 °C
Very-low-power run mode current— 2 MHz
LIRC mode, While(1) loop in flash all peripheral
clock disable, 125 kHz core / 31.25 kHz flash,
VDD = 3.0 V
• at 25 °C
Very-low-power run mode current— 2 MHz
LIRC mode, While(1) loop in flash all peripheral
clock enable, 2 MHz core / 0.5 MHz flash, VDD
= 3.0 V
• at 25 °C
Very-low-power run mode current— 8 MHz
LIRC mode, While(1) loop in SRAM in all
peripheral clock disable, 4 MHz core / 1 MHz
flash, VDD = 3.0 V
• at 25 °C
Very-low-power run mode current— 8 MHz
LIRC mode, While(1) loop in SRAM all
peripheral clock enable, 4 MHz core / 1 MHz
flash, VDD = 3.0 V
• at 25 °C
—
—
500
750
μA
—
—
188
217
μA
—
—
82
123
μA
—
—
503
754
μA
—
—
60
90
μA
—
—
516
774
μA
—
—
209
350
μA
—
—
229
Very-low-power run mode current—2 MHz
LIRC mode, While(1) loop in SRAM in all
370
μA
—
Table continues on the next page...
Kinetis KL03 32 KB Flash, Rev. 5.1 08/2017
17
NXP Semiconductors
General
Table 11. KL03 WLCSP package power consumption operating behaviors (continued)
Symbol
Description
peripheral clock disable, 2 MHz core / 0.5 MHz
flash, VDD = 3.0 V
• at 25 °C
IDD_VLPR
IDD_VLPR
IDD_WAIT
IDD_WAIT
Very-low-power run mode current—2 MHz
LIRC mode, While(1) loop in SRAM all
peripheral clock disable, 125 kHz core / 31.25
kHz flash, VDD = 3.0 V
• at 25 °C
Very-low-power run mode current—2 MHz
LIRC mode, While(1) loop in SRAM all
peripheral clock enable, 2 MHz core / 0.5 MHz
flash, VDD = 3.0 V
• at 25 °C
Wait mode current—core disabled, 48 MHz
system/24 MHz bus, flash disabled (flash doze
enabled), all peripheral clocks disabled,
MCG_Lite under HIRC mode, VDD = 3.0 V
Wait mode current—core disabled, 24 MHz
system/12 MHz bus, flash disabled (flash doze
enabled), all peripheral clocks disabled,
MCG_Lite under HIRC mode, VDD = 3.0 V
Min.
Typ.
Max.1
Unit
—
93
140
μA
Notes
—
—
31
81
μA
—
—
103
154
μA
—
—
1.4
1.94
mA
—
—
1.02
1.24
mA
IDD_VLPW Very-low-power wait mode current, core
disabled, 4 MHz system/ 1 MHz bus and flash,
all peripheral clocks disabled, VDD = 3.0 V
—
121
181
μA
—
IDD_VLPW Very-low-power wait mode current, core
disabled, 2 MHz system/ 0.5 MHz bus and
flash, all peripheral clocks disabled, VDD = 3.0
V
—
59
97
μA
—
IDD_VLPW Very-low-power wait mode current, core
disabled, 125 kHz system/ 31.25 kHz bus and
flash, all peripheral clocks disabled, VDD = 3.0
V
—
28
42
μA
—
IDD_PSTOP2 Partial Stop 2, core and system clock disabled,
12 MHz bus and flash, VDD = 3.0 V
—
—
1.53
2.03
mA
IDD_PSTOP2 Partial Stop 2, core and system clock disabled,
flash doze enabled, 12 MHz bus, VDD = 3.0 V
—
—
IDD_STOP
Stop mode current at 3.0 V
• at 25 °C and below
1.18
mA
—
• at 50 °C
• at 85 °C
IDD_VLPS
0.881
Very-low-power stop mode current at 3.0 V
• at 25 °C and below
—
158
175.7
—
164
179.48
—
187
199.54
μA
—
—
2.2
2.71
—
3.9
6.63
Table continues on the next page...
18
NXP Semiconductors
Kinetis KL03 32 KB Flash, Rev. 5.1 08/2017
General
Table 11. KL03 WLCSP package power consumption operating behaviors (continued)
Symbol
Description
• at 50 °C
Min.
Typ.
Max.1
Unit
—
13.9
18.25
μA
Notes
• at 85 °C
IDD_VLPS
Very-low-power stop mode current at 1.8 V
• at 25 °C and below
• at 50 °C
• at 85 °C
IDD_VLLS3 Very-low-leakage stop mode 3 current, all
peripheral disable, at 3.0 V
• at 25 °C and below
—
—
2.2
2.674
—
3.8
6.44
—
13.2
17.37
—
μA
—
1.08
1.17
• at 50 °C
—
1.4
1.52
• at 85 °C
—
3.45
3.96
IDD_VLLS3 Very-low-leakage stop mode 3 current with
RTC current, at 3.0 V
• at 25 °C and below
• at 50 °C
• at 85 °C
IDD_VLLS3 Very-low-leakage stop mode 3 current with
RTC current, at 1.8 V
• at 25 °C and below
• at 50 °C
• at 85 °C
IDD_VLLS1 Very-low-leakage stop mode 1 current all
peripheral disabled at 3.0 V
• at 25 °C and below
• at 50°C
• at 85°C
IDD_VLLS1 Very-low-leakage stop mode 1 current RTC
enabled at 3.0 V
• at 25 °C and below
• at 50°C
• at 85°C
IDD_VLLS1 Very-low-leakage stop mode 1 current RTC
enabled at 1.8 V
• at 25 °C and below
• at 50°C
• at 85°C
IDD_VLLS0 Very-low-leakage stop mode 0 current all
peripheral disabled
(SMC_STOPCTRL[PORPO] = 0) at 3.0 V
μA
—
—
1.47
1.56
—
1.82
1.94
—
3.93
4.44
μA
—
—
1.33
1.42
—
1.65
1.77
—
3.56
4.07
μA
—
—
566
690
—
788
839
—
2270
2600
nA
—
—
969
1059
—
1200
1251
—
2740
3070
nA
—
—
826
916
—
1040
1091
—
2400
2730
nA
—
—
265
373
Table continues on the next page...
Kinetis KL03 32 KB Flash, Rev. 5.1 08/2017
19
NXP Semiconductors
General
Table 11. KL03 WLCSP package power consumption operating behaviors (continued)
Symbol
Min.
Typ.
Max.1
• at 25 °C and below
—
467
512.9
• at 50 °C
—
1920
2256
Description
Unit
Notes
nA
• at 85 °C
IDD_VLLS0 Very-low-leakage stop mode 0 current all
peripheral disabled
(SMC_STOPCTRL[PORPO] = 1) at 3 V
• at 25 °C and below
• at 50 °C
• at 85 °C
4
—
77
350
—
255
465.70
—
1640
1994
nA
1. The maximum values represent characterized results equivalent to the mean plus three times the standard deviation
(mean + 3 sigma).
2. The analog supply current is the sum of the active or disabled current for each of the analog modules on the device. See
each module's specification for its supply current.
3. MCG_Lite configured for HIRC mode. CoreMark benchmark compiled using IAR 7.10 with optimization level high,
optimized for balanced.
4. No brownout
Table 12. Low power mode peripheral adders — typical value
Symbol
Description
Temperature (°C)
Unit
-40
25
50
70
85
1051
ILIRC8MHz
8 MHz internal reference clock (LIRC)
adder. Measured by entering STOP or
VLPS mode with 8 MHz LIRC enabled,
MCG_SC[FCRDIV]=000b,
MCG_MC[LIRC_DIV2]=000b.
68
68
68
68
68
68
µA
ILIRC2MHz
2 MHz internal reference clock (LIRC)
adder. Measured by entering STOP
mode with the 2 MHz LIRC enabled,
MCG_SC[FCRDIV]=000b,
MCG_MC[LIRC_DIV2]=000b.
27
27
27
27
27
27
µA
IEREFSTEN32KHz
External 32 kHz crystal clock adder by
means of the OSC0_CR[EREFSTEN
and EREFSTEN] bits. Measured by
entering all modes with the crystal
enabled.
• VLLS1
• VLLS3
• VLPS
• STOP
340
410
460
470
480
600
340
410
460
490
530
600
340
420
480
570
610
850
340
420
480
570
610
850
30
30
30
85
100
200
ILPTMR
LPTMR peripheral adder measured by
placing the device in VLLS1 mode with
LPTMR enabled using LPO.
nA
nA
Table continues on the next page...
20
NXP Semiconductors
Kinetis KL03 32 KB Flash, Rev. 5.1 08/2017
General
Table 12. Low power mode peripheral adders — typical value (continued)
Symbol
Description
Temperature (°C)
Unit
-40
25
50
70
85
1051
ICMP
CMP peripheral adder measured by
placing the device in VLLS1 mode with
CMP enabled using the 6-bit DAC and a
single external input for compare.
Includes 6-bit DAC power consumption.
15
15
15
15
15
15
µA
IRTC
RTC peripheral adder measured by
placing the device in VLLS1 mode with
external 32 kHz crystal enabled by
means of the RTC_CR[OSCE] bit and
the RTC ALARM set for 1 minute.
Includes ERCLK32K (32 kHz external
crystal) power consumption.
340
440
440
480
520
620
nA
IUART
UART peripheral adder measured by
placing the device in STOP or VLPS
mode with selected clock source waiting
for RX data at 115200 baud rate.
Includes selected clock source power
consumption.
• LIRC8M (8 MHz internal
reference clock)
• LIRC2M (2 MHz internal
reference clock)
85
85
85
85
85
85
µA
28
28
28
28
28
28
ITPM
TPM peripheral adder measured by
placing the device in STOP or VLPS
mode with selected clock source
configured for output compare
generating 100 Hz clock signal. No load
is placed on the I/O generating the
clock signal. Includes selected clock
source and I/O switching currents.
• LIRC8M (8 MHz internal
reference clock)
• LIRC2M (2 MHz internal
reference clock)
µA
93
93
93
93
93
93
35
35
35
35
35
35
IBG
Bandgap adder when BGEN bit is set
and device is placed in VLPx or VLLSx
mode.
45
45
45
45
45
45
µA
IADC
ADC peripheral adder combining the
measured values at VDD and VDDA by
placing the device in STOP or VLPS
mode. ADC is configured for low power
mode using the internal clock and
continuous conversions.
340
340
340
340
340
340
µA
1. For QFN packages only.
Kinetis KL03 32 KB Flash, Rev. 5.1 08/2017
21
NXP Semiconductors
General
2.2.5.1
Diagram: Typical IDD_RUN operating behavior
The following data was measured under these conditions:
•
•
•
•
MCG-Lite in HIRC for run mode, and LIRC for VLPR mode
No GPIOs toggled
Code execution from flash
For the ALLOFF curve, all peripheral clocks are disabled except FTFA
Run Mode Current vs Core Frequency
Temperature=25, VDD=3, MCG Mode=HIRC, while loop located in Flash
7.00E-03
6.00E-03
Current Consumption on VDD (A)
5.00E-03
All Peripheral CLK Gates
4.00E-03
ALLOFF
ALLON
3.00E-03
2.00E-03
1.00E-03
000.00E+00
'1-1
'1-1
'1-1
'1-1
1-1
'1-2
3
6
8
12
24
48
CLK Ratio
Flash - Core
Core Freq (MHz)
Figure 3. Run mode supply current vs. core frequency (loop located in flash)
22
NXP Semiconductors
Kinetis KL03 32 KB Flash, Rev. 5.1 08/2017
General
Run Mode Current vs Core Frequency
Temperature=25, VDD=3, MCG Mode=HIRC, while loop located in SRAM
4.00E-03
3.50E-03
Current Consumption on VDD (A)
3.00E-03
2.50E-03
All Peripheral CLK Gates
2.00E-03
ALLOFF
ALLON
1.50E-03
1.00E-03
500.00E-06
000.00E+00
'1-1
'1-1
'1-1
'1-1
1-1
'1-2
3
6
8
12
24
48
CLK Ratio
Flash - Core
Core Freq (MHz)
Figure 4. Run mode supply current vs. core frequency (loop located in SRAM)
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NXP Semiconductors
General
VLPR Mode Current vs Core Frequency
Temperature=25, VDD=3, MCG=LIRC8M, while loop in SRAM
250.00E-06
Current Consumption on VDD (A)
200.00E-06
150.00E-06
All Peripheral CLK Gates
ALLOFF
ALLON
100.00E-06
50.00E-06
CLK Ratio
Flash - Core
Core Freq (MHz)
000.00E+00
'1-1
'1-2
'1-4
1
2
4
Figure 5. VLPR mode current vs. core frequency (loop in SRAM)
2.2.6 EMC radiated emissions operating behaviors
Table 13. EMC radiated emissions operating behaviors for 24-pin QFN package
Symbol
Description
Frequency
band
(MHz)
Typ.
Unit
Notes
1, 2
VRE1
Radiated emissions voltage, band 1
0.15–50
5
dBμV
VRE2
Radiated emissions voltage, band 2
50–150
7
dBμV
VRE3
Radiated emissions voltage, band 3
150–500
5
dBμV
VRE4
Radiated emissions voltage, band 4
500–1000
5
dBμV
IEC/SAE level
0.15–1000
N
—
VRE_IEC
2, 3
1. Determined according to IEC 61967-2 (and SAE J1752/3) radiated radio frequency (RF) emissions measurement
standard. Typical Configuration: Appendix B: DUT Software Configuration—2. Typical Configuration.
2. VDD = 3.3 V, TA = 25 °C, firc48m = 48 MHz, fSYS = 48 MHz, fBUS = 24 MHz
3. IEC/SAE Level Maximums: N≤12 dBµV, M≤18 dBµV, L≤24 dBµV, K≤30 dBµV, I ≤ 36 dBµV, H ≤ 42 dBµV, G≤48 dBµV.
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NXP Semiconductors
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General
2.2.7 EMC Radiated Emissions Web Search Procedure boilerplate
To find application notes that provide guidance on designing your system to minimize
interference from radiated emissions:
1. Go to www.nxp.com.
2. Perform a keyword search for "EMC design"
2.2.8 Capacitance attributes
Table 14. Capacitance attributes
Symbol
CIN
Description
Input capacitance
Min.
Max.
Unit
—
7
pF
Min.
Max.
Unit
2.3 Switching specifications
2.3.1 Device clock specifications
Table 15. Device clock specifications
Symbol
Description
Normal run mode
fSYS
System and core clock
—
48
MHz
fBUS
Bus clock
—
24
MHz
fFLASH
Flash clock
—
24
MHz
fLPTMR
LPTMR clock
—
24
MHz
VLPR and VLPS modes1
fSYS
System and core clock
—
4
MHz
fBUS
Bus clock
—
1
MHz
Flash clock
—
1
MHz
—
24
MHz
MHz
fFLASH
clock2
fLPTMR
LPTMR
fERCLK
External reference clock
—
16
fERCLK
External reference clock
—
32.768
kHz
—
16
MHz
TPM asynchronous clock
—
8
MHz
UART0 asynchronous clock
—
8
MHz
fLPTMR_ERCLK LPTMR external reference clock
fTPM
fUART0
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NXP Semiconductors
General
1. The frequency limitations in VLPR and VLPS modes here override any frequency specification listed in the timing
specification for any other module. These same frequency limits apply to VLPS, whether VLPS was entered from RUN
or from VLPR.
2. The LPTMR can be clocked at this speed in VLPR or VLPS only when the source is an external pin.
2.3.2 General switching specifications
These general-purpose specifications apply to all signals configured for GPIO and
UART signals.
Table 16. General switching specifications
Description
Min.
Max.
Unit
Notes
GPIO pin interrupt pulse width (digital glitch filter disabled) —
Synchronous path
1.5
—
Bus clock
cycles
1
External RESET and NMI pin interrupt pulse width —
Asynchronous path
100
—
ns
2
GPIO pin interrupt pulse width — Asynchronous path
16
—
ns
2
Port rise and fall time
—
36
ns
3
1. The greater synchronous and asynchronous timing must be met.
2. This is the shortest pulse that is guaranteed to be recognized.
3. 75 pF load
2.4 Thermal specifications
2.4.1 Thermal operating requirements
Table 17. Thermal operating requirements of WLCSP package
Symbol
Description
Min.
Max.
Unit
TJ
Die junction temperature
–40
95
°C
TA
Ambient temperature
–40
85
°C
Note
1
1. Maximum TA can be exceeded only if the user ensures that TJ does not exceed the maximum. The simplest method to
determine TJ is: TJ = TA + RθJA × chip power dissipation.
Table 18. Thermal operating requirements of other packages
Symbol
Description
Min.
Max.
Unit
TJ
Die junction temperature
–40
125
°C
TA
Ambient temperature
–40
105
°C
Note
1
1. Maximum TA can be exceeded only if the user ensures that TJ does not exceed the maximum. The simplest method to
determine TJ is: TJ = TA + RθJA × chip power dissipation.
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NXP Semiconductors
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Peripheral operating requirements and behaviors
2.4.2 Thermal attributes
Table 19. Thermal attributes
Board type
Symbol
Single-layer (1S)
RθJA
Four-layer (2s2p)
Description
16 QFN
20
WLCSP
24 QFN
Unit
Notes
Thermal resistance, junction to
ambient (natural convection)
64.2
69.8
60.7
°C/W
1,2
RθJA
Thermal resistance, junction to
ambient (natural convection)
53.3
57.5
48.5
°C/W
1,2,3
Single-layer (1S)
RθJMA
Thermal resistance, junction to
ambient (200 ft./min. air speed)
55.4
62.03
51.0
°C/W
1,3
Four-layer (2s2p)
RθJMA
Thermal resistance, junction to
ambient (200 ft./min. air speed)
48.9
54.3
43.6
°C/W
1,3
—
RθJB
Thermal resistance, junction to
board
33.5
51.64
30.4
°C/W
4
—
RθJC
Thermal resistance, junction to
case
20.9
0.73
9.8
°C/W
5
—
ΨJT
Thermal characterization
parameter, junction to package
top outside center (natural
convection)
0.2
0.2
0.2
°C/W
6
—
ΨJB
Thermal characterization
parameter, junction to package
bottom outside center (natural
convection)
22.4
―
21.8
°C/W
7
1. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site
(board) temperature, ambient temperature, air flow, power dissipation of other components on the board, and board
thermal resistance.
2. Per SEMI G38-87 and JEDEC JESD51-2 with the single layer board horizontal.
3. Per JEDEC JESD51-6 with the board horizontal.
4. Thermal resistance between the die and the printed circuit board per JEDEC JESD51-8. Board temperature is
measured on the top surface of the board near the package.
5. Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883
Method 1012.1).
6. Thermal characterization parameter indicating the temperature difference between package top and the junction
temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is
written as Psi-JT.
7. Thermal characterization parameter indicating the temperature difference between package bottom center and the
junction temperature per JEDEC JESD51-12. When Greek letters are not available, the thermal characterization
parameter is written as Psi-JB.
3 Peripheral operating requirements and behaviors
3.1 Core modules
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NXP Semiconductors
Peripheral operating requirements and behaviors
3.1.1 SWD electricals
Table 20. SWD full voltage range electricals
Symbol
J1
Description
Min.
Max.
Unit
Operating voltage
1.71
3.6
V
0
25
MHz
1/J1
—
ns
20
—
ns
SWD_CLK frequency of operation
• Serial wire debug
J2
SWD_CLK cycle period
J3
SWD_CLK clock pulse width
• Serial wire debug
J4
SWD_CLK rise and fall times
—
3
ns
J9
SWD_DIO input data setup time to SWD_CLK rise
10
—
ns
J10
SWD_DIO input data hold time after SWD_CLK rise
0
—
ns
J11
SWD_CLK high to SWD_DIO data valid
—
32
ns
J12
SWD_CLK high to SWD_DIO high-Z
5
—
ns
J2
J3
J3
SWD_CLK (input)
J4
J4
Figure 6. Serial wire clock input timing
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NXP Semiconductors
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Peripheral operating requirements and behaviors
SWD_CLK
J9
SWD_DIO
J10
Input data valid
J11
SWD_DIO
Output data valid
J12
SWD_DIO
J11
SWD_DIO
Output data valid
Figure 7. Serial wire data timing
3.2 System modules
There are no specifications necessary for the device's system modules.
3.3 Clock modules
3.3.1 MCG-Lite specifications
Table 21. HIRC48M specification
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
VDD
Supply voltage
1.71
—
3.6
V
—
IDD48M
Supply current
—
400
500
μA
—
firc48m
Internal reference frequency
—
48
—
MHz
—
Δfirc48m_ol_lv total deviation of IRC48M frequency at low voltage
(VDD=1.71V-1.89V) over temperature
—
%firc48m
—
± 0.5
±1.5
Table continues on the next page...
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NXP Semiconductors
Peripheral operating requirements and behaviors
Table 21. HIRC48M specification (continued)
Symbol
Description
Min.
Δfirc48m_ol_hv total deviation of IRC48M frequency at high voltage
(VDD=1.89V-3.6V) over temperature
Jcyc_irc48m
tirc48mst
Typ.
Max.
Unit
Notes
—
—
± 0.5
±1.0
%firc48m
Period Jitter (RMS)
—
35
150
ps
—
Startup time
—
2
3
μs
1
1. IRC48M startup time is defined as the time between clock enablement and clock availability for system use. Enable the
clock by setting MCG_MC[HIRCEN] = 1. See reference manual for details.
Table 22. LIRC8M/2M specification
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
VDD
Supply voltage
1.08
—
1.47
V
—
T
Temperature range
-40
—
125
°C
—
IDD_2M
Supply current in 2 MHz mode
—
14
17
µA
—
IDD_8M
Supply current in 8 MHz mode
—
30
35
µA
—
fIRC_2M
Output frequency
—
2
—
MHz
—
fIRC_8M
Output frequency
—
8
—
MHz
—
fIRC_T_2M
Output frequency range (trimmed)
—
—
±3
%fIRC
VDD≥1.89 V
fIRC_T_8M
Output frequency range (trimmed)
—
—
±3
%fIRC
VDD≥1.89 V
Tsu_2M
Startup time
—
—
12.5
µs
—
Tsu_8M
Startup time
—
—
12.5
µs
—
3.3.2 Oscillator electrical specifications
3.3.2.1
Oscillator DC electrical specifications
Table 23. Oscillator DC electrical specifications
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
VDD
Supply voltage
1.71
—
3.6
V
—
IDDOSC
Supply current — low-power mode
• 32 kHz
1
—
500
—
nA
Cx
EXTAL load capacitance
—
—
—
2, 3
Cy
XTAL load capacitance
—
—
—
2, 3
RF
Feedback resistor — low-frequency, low-power
mode
—
—
—
MΩ
2, 4
RS
Series resistor — low-frequency, low-power
mode
—
—
—
kΩ
—
Table continues on the next page...
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NXP Semiconductors
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Peripheral operating requirements and behaviors
Table 23. Oscillator DC electrical specifications (continued)
Symbol
5
Vpp
1.
2.
3.
4.
5.
Description
Peak-to-peak amplitude of oscillation (oscillator
mode) — low-frequency, low-power mode
Min.
Typ.
Max.
Unit
Notes
—
0.6
—
V
—
VDD=3.3 V, Temperature =25 °C
See crystal or resonator manufacturer's recommendation
Cx,Cy can be provided by using either the integrated capacitors or by using external components.
When low power mode is selected, RF is integrated and must not be attached externally.
The EXTAL and XTAL pins should only be connected to required oscillator components and must not be connected to
any other devices.
3.3.2.2
Symbol
fosc_lo
tdc_extal
tcst
Oscillator frequency specifications
Table 24. Oscillator frequency specifications
Description
Min.
Typ.
Max.
Unit
Notes
Oscillator crystal or resonator frequency — low
frequency mode
32
—
40
kHz
—
Input clock duty cycle (external clock mode)
40
50
60
%
—
Crystal startup time — 32 kHz low-frequency,
low-power mode
—
750
—
ms
1, 2
1. Proper PC board layout procedures must be followed to achieve specifications.
2. Crystal startup time is defined as the time between the oscillator being enabled and the OSCINIT bit in the MCG_S
register being set.
3.4 Memories and memory interfaces
3.4.1 Flash electrical specifications
This section describes the electrical characteristics of the flash memory module.
3.4.1.1
Flash timing specifications — program and erase
The following specifications represent the amount of time the internal charge pumps
are active and do not include command overhead.
Table 25. NVM program/erase timing specifications
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
thvpgm4
Longword Program high-voltage time
—
7.5
18
μs
—
thversscr
Sector Erase high-voltage time
—
13
113
ms
1
thversall
Erase All high-voltage time
—
52
452
ms
1
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NXP Semiconductors
Peripheral operating requirements and behaviors
1. Maximum time based on expectations at cycling end-of-life.
3.4.1.2
Flash timing specifications — commands
Table 26. Flash command timing specifications
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
trd1sec1k
Read 1s Section execution time (flash sector)
—
—
60
μs
1
tpgmchk
Program Check execution time
—
—
45
μs
1
trdrsrc
Read Resource execution time
—
—
30
μs
1
tpgm4
Program Longword execution time
—
65
145
μs
—
tersscr
Erase Flash Sector execution time
—
14
114
ms
2
trd1all
Read 1s All Blocks execution time
—
—
0.5
ms
—
trdonce
Read Once execution time
—
—
25
μs
1
Program Once execution time
—
65
—
μs
—
tersall
Erase All Blocks execution time
—
61
500
ms
2
tvfykey
Verify Backdoor Access Key execution time
—
—
30
μs
1
tpgmonce
1. Assumes 25 MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3.4.1.3
Flash high voltage current behaviors
Table 27. Flash high voltage current behaviors
Symbol
Description
IDD_PGM
IDD_ERS
3.4.1.4
Symbol
Min.
Typ.
Max.
Unit
Average current adder during high voltage
flash programming operation
—
2.5
6.0
mA
Average current adder during high voltage
flash erase operation
—
1.5
4.0
mA
Reliability specifications
Table 28. NVM reliability specifications
Description
Min.
Typ.1
Max.
Unit
Notes
Program Flash
tnvmretp10k Data retention after up to 10 K cycles
5
50
—
years
—
tnvmretp1k
Data retention after up to 1 K cycles
20
100
—
years
—
nnvmcycp
Cycling endurance
10 K
50 K
—
cycles
2
1. Typical data retention values are based on measured response accelerated at high temperature and derated to a
constant 25 °C use profile. Engineering Bulletin EB618 does not apply to this technology. Typical endurance defined in
Engineering Bulletin EB619.
2. Cycling endurance represents number of program/erase cycles at -40 °C ≤ Tj ≤ 125 °C.
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NXP Semiconductors
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Peripheral operating requirements and behaviors
3.5 Security and integrity modules
There are no specifications necessary for the device's security and integrity modules.
3.6 Analog
3.6.1 ADC electrical specifications
All ADC channels meet the 12-bit single-ended accuracy specifications.
3.6.1.1
12-bit ADC operating conditions
Table 29. 12-bit ADC operating conditions
Symbol
Description
Conditions
Min.
Typ.1
Max.
Unit
Notes
VDDA
Supply voltage
Absolute
1.71
—
3.6
V
—
ΔVDDA
Supply voltage
Delta to VDD (VDD – VDDA)
-100
0
+100
mV
2
ΔVSSA
Ground voltage
Delta to VSS (VSS – VSSA)
-100
0
+100
mV
2
VREFH
ADC reference
voltage high
1.13
VDDA
VDDA
V
3
VREFL
ADC reference
voltage low
VSSA
VSSA
VSSA
V
3
VADIN
Input voltage
VREFL
—
VREFH
V
—
CADIN
Input
capacitance
—
4
5
pF
—
RADIN
Input series
resistance
—
2
5
kΩ
—
RAS
Analog source
resistance
(external)
• 8-bit / 10-bit / 12-bit
modes
12-bit modes
4
fADCK < 4 MHz
—
—
5
kΩ
fADCK
ADC conversion ≤ 12-bit mode
clock frequency
1.0
—
18.0
MHz
Crate
ADC conversion ≤ 12-bit modes
rate
No ADC hardware averaging
5
6
20.000
—
818.330
Ksps
Continuous conversions
enabled, subsequent
conversion time
1. Typical values assume VDDA = 3.0 V, Temp = 25 °C, fADCK = 1.0 MHz, unless otherwise stated. Typical values are for
reference only, and are not tested in production.
2. DC potential difference.
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NXP Semiconductors
Peripheral operating requirements and behaviors
3. For packages without dedicated VREFH and VREFL pins, VREFH is internally tied to VDDA, and VREFL is internally tied to
VSSA.
4. This resistance is external to MCU. To achieve the best results, the analog source resistance must be kept as low as
possible. The results in this data sheet were derived from a system that had < 8 Ω analog source resistance. The
RAS/CAS time constant should be kept to < 1 ns.
5. To use the maximum ADC conversion clock frequency, CFG2[ADHSC] must be set and CFG1[ADLPC] must be clear.
6. For guidelines and examples of conversion rate calculation, download the ADC calculator tool.
SIMPLIFIED
INPUT PIN EQUIVALENT
CIRCUIT
ZADIN
SIMPLIFIED
CHANNEL SELECT
CIRCUIT
Pad
leakage
due to
input
protection
ZAS
RAS
ADC SAR
ENGINE
RADIN
VADIN
CAS
VAS
RADIN
INPUT PIN
RADIN
INPUT PIN
RADIN
INPUT PIN
CADIN
Figure 8. ADC input impedance equivalency diagram
3.6.1.2
12-bit ADC electrical characteristics
Table 30. 12-bit ADC characteristics (VREFH = VDDA, VREFL = VSSA)
Symbol
Description
Conditions1.
Min.
Typ.2
Max.
Unit
Notes
0.215
—
1.7
mA
3
• ADLPC = 1, ADHSC = 0
1.2
2.4
3.9
MHz
• ADLPC = 1, ADHSC = 1
2.4
4.0
6.1
MHz
tADACK =
1/fADACK
• ADLPC = 0, ADHSC = 0
3.0
5.2
7.3
MHz
• ADLPC = 0, ADHSC = 1
4.4
6.2
9.5
MHz
LSB4
IDDA_ADC Supply current
fADACK
ADC
asynchronous
clock source
Sample Time
TUE
Total
unadjusted error
See Reference Manual chapter for sample times
• 12-bit modes
—
±6
—
•
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