Freescale Semiconductor, Inc.
Data Sheet: Technical Data
Document Number: KL16P64M48SF5
Rev 5 08/2014
Kinetis KL16 Sub-Family
MKL16ZxxxVFM4
MKL16ZxxxVFT4
MKL16ZxxxVLH4
48 MHz Cortex-M0+ Based Microcontroller
Designed with efficiency in mind. Compatible with all other
Kinetis L families as well as Kinetis K1x family. General purpose
MCU featuring market leading ultra low-power to provide
developers an appropriate entry-level 32-bit solution.
This product offers:
• Run power consumption down to 40 μA/MHz in very low
power run mode
• Static power consumption down to 2 μA with full state
retention and 4.5 μs wakeup
• Ultra-efficient Cortex-M0+ processor running up to 48 MHz
with industry leading throughput
• Memory option is up to 128 KB flash and 16 KB RAM
• Energy-saving architecture is optimized for low power with
90nm TFS technology, clock and power gating techniques,
and zero wait state flash memory controller
Performance
• 48 MHz ARM® Cortex®-M0+ core
Memories and memory interfaces
• Up to 128 KB program flash memory
• Up to 16 KB SRAM
32-pin QFN (FM)
48-pin QFN (FT)
5 x 5 x 1 Pitch 0.5 mm 7 x 7 x 1 Pitch 0.5 mm
64-pin LQFP (LH)
10 x 10 x 1.4 Pitch 0.5 mm
Human-machine interface
• Low-power hardware touch sensor interface (TSI)
• Up to 54 general-purpose input/output (GPIO)
Communication interfaces
• Two 16-bit SPI modules
• I2S (SAI) module
• One low power UART module
• Two UART modules
• Two I2C module
System peripherals
• Nine low-power modes to provide power optimization
based on application requirements
• COP Software watchdog
• 4-channel DMA controller, supporting up to 63 request Analog Modules
sources
• 16-bit SAR ADC
• Low-leakage wakeup unit
• 12-bit DAC
• SWD debug interface and Micro Trace Buffer
• Analog comparator (CMP) containing a 6-bit DAC
• Bit Manipulation Engine
and programmable reference input
Clocks
Timers
• 32 kHz to 40 kHz or 3 MHz to 32 MHz crystal oscillator
• Six channel Timer/PWM (TPM)
• Multi-purpose clock source
• Two 2-channel Timer/PWM modules
• Periodic interrupt timers
Operating Characteristics
• 16-bit low-power timer (LPTMR)
• Voltage range: 1.71 to 3.6 V
• Real time clock
• Flash write voltage range: 1.71 to 3.6 V
Security and integrity modules
• Temperature range (ambient): -40 to 105°C
• 80-bit unique identification number per chip
Freescale reserves the right to change the detail specifications as may be required to
permit improvements in the design of its products. © 2013–2014 Freescale
Semiconductor, Inc. All rights reserved.
Ordering Information 1
Part Number
Memory
Maximum number of I\O's
Flash (KB)
SRAM (KB)
MKL16Z32VFM4
32
4
28
MKL16Z64VFM4
64
8
28
MKL16Z128VFM4
128
16
28
MKL16Z32VFT4
32
4
40
MKL16Z64VFT4
64
8
40
MKL16Z128VFT4
128
16
40
MKL16Z32VLH4
32
4
54
MKL16Z64VLH4
64
8
54
MKL16Z128VLH4
128
16
54
1. To confirm current availability of ordererable part numbers, go to http://www.freescale.com and perform a part number
search.
Related Resources
Type
Description
Resource
Selector Guide
The Freescale Solution Advisor is a web-based tool that features
interactive application wizards and a dynamic product selector.
Solution Advisor
Reference
Manual
The Reference Manual contains a comprehensive description of the
structure and function (operation) of a device.
KL16P64M48SF5RM1
Data Sheet
The Data Sheet includes electrical characteristics and signal
connections.
KL16P64M48SF51
Chip Errata
The chip mask set Errata provides additional or corrective
information for a particular device mask set.
KINETIS_L_xN15J 2
Package
drawing
Package dimensions are provided in package drawings.
QFN 32-pin: 98ASA00473D1
QFN 48-pin: 98ASA00466D1
LQFP 64-pin: 98ASS23234W1
1. To find the associated resource, go to http://www.freescale.com and perform a search using this term.
2. To find the associated resource, go to http://www.freescale.com and perform a search using this term with the “x”
replaced by the revision of the device you are using.
2
Freescale Semiconductor, Inc.
Kinetis KL16 Sub-Family, Rev5 08/2014.
Table of Contents
1 Ratings.................................................................................. 4
1.1 Thermal handling ratings............................................... 4
1.2 Moisture handling ratings...............................................4
1.3 ESD handling ratings..................................................... 4
1.4 Voltage and current operating ratings............................4
2 General................................................................................. 5
2.1 AC electrical characteristics...........................................5
2.2 Nonswitching electrical specifications............................5
2.2.1 Voltage and current operating requirements......6
2.2.2 LVD and POR operating requirements.............. 6
2.2.3 Voltage and current operating behaviors........... 7
2.2.4 Power mode transition operating behaviors.......8
2.2.5 Power consumption operating behaviors...........9
2.2.6 EMC radiated emissions operating behaviors... 14
2.2.7 Designing with radiated emissions in mind........ 15
2.2.8 Capacitance attributes....................................... 15
2.3 Switching specifications................................................. 15
2.3.1 Device clock specifications................................ 15
2.3.2 General switching specifications........................16
2.4 Thermal specifications................................................... 16
2.4.1 Thermal operating requirements........................16
2.4.2 Thermal attributes.............................................. 17
3 Peripheral operating requirements and behaviors................ 17
3.1 Core modules................................................................ 17
3.1.1 SWD electricals .................................................17
3.2 System modules............................................................ 19
3.3 Clock modules............................................................... 19
3.3.1 MCG specifications............................................ 19
3.3.2 Oscillator electrical specifications...................... 21
3.4 Memories and memory interfaces................................. 23
3.4.1 Flash electrical specifications............................ 23
3.5 Security and integrity modules.......................................24
3.6 Analog............................................................................24
3.6.1
ADC electrical specifications..............................24
Kinetis KL16 Sub-Family, Rev5 08/2014.
4
5
6
7
8
3.6.2 CMP and 6-bit DAC electrical specifications......29
3.6.3 12-bit DAC electrical characteristics.................. 31
3.7 Timers............................................................................ 34
3.8 Communication interfaces............................................. 34
3.8.1 SPI switching specifications...............................34
3.8.2 Inter-Integrated Circuit Interface (I2C) timing.....39
3.8.3 UART................................................................. 40
3.8.4 I2S/SAI switching specifications........................ 40
3.9 Human-machine interfaces (HMI).................................. 44
3.9.1 TSI electrical specifications................................44
Dimensions........................................................................... 45
4.1 Obtaining package dimensions......................................45
Pinout.................................................................................... 45
5.1 KL16 Signal Multiplexing and Pin Assignments.............45
5.2 KL16 pinouts.................................................................. 48
Ordering parts....................................................................... 51
6.1 Determining valid orderable parts.................................. 51
Part identification...................................................................51
7.1 Description..................................................................... 52
7.2 Format........................................................................... 52
7.3 Fields............................................................................. 52
7.4 Example......................................................................... 52
Terminology and guidelines.................................................. 53
8.1 Definition: Operating requirement.................................. 53
8.2 Definition: Operating behavior....................................... 53
8.3 Definition: Attribute........................................................ 53
8.4 Definition: Rating........................................................... 54
8.5 Result of exceeding a rating.......................................... 54
8.6 Relationship between ratings and operating
requirements.................................................................. 54
8.7 Guidelines for ratings and operating requirements........ 55
8.8 Definition: Typical value................................................. 55
8.9 Typical value conditions.................................................56
9 Revision history.....................................................................57
3
Freescale Semiconductor, Inc.
Ratings
1 Ratings
1.1 Thermal handling ratings
Table 1. Thermal handling ratings
Symbol
Description
Min.
Max.
Unit
Notes
TSTG
Storage temperature
–55
150
°C
1
TSDR
Solder temperature, lead-free
—
260
°C
2
1. Determined according to JEDEC Standard JESD22-A103, High Temperature Storage Life.
2. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic
Solid State Surface Mount Devices.
1.2 Moisture handling ratings
Table 2. Moisture handling ratings
Symbol
MSL
Description
Moisture sensitivity level
Min.
Max.
Unit
Notes
—
3
—
1
1. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic
Solid State Surface Mount Devices.
1.3 ESD handling ratings
Table 3. ESD handling ratings
Symbol
Description
Min.
Max.
Unit
Notes
VHBM
Electrostatic discharge voltage, human body model
–2000
+2000
V
1
VCDM
Electrostatic discharge voltage, charged-device
model
–500
+500
V
2
Latch-up current at ambient temperature of 105 °C
–100
+100
mA
3
ILAT
1. Determined according to JEDEC Standard JESD22-A114, Electrostatic Discharge (ESD) Sensitivity Testing Human
Body Model (HBM).
2. Determined according to JEDEC Standard JESD22-C101, Field-Induced Charged-Device Model Test Method for
Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components.
3. Determined according to JEDEC Standard JESD78, IC Latch-Up Test.
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Freescale Semiconductor, Inc.
Kinetis KL16 Sub-Family, Rev5 08/2014.
General
1.4 Voltage and current operating ratings
Table 4. Voltage and current operating ratings
Symbol
Description
Min.
Max.
Unit
VDD
Digital supply voltage
–0.3
3.8
V
IDD
Digital supply current
—
120
mA
VIO
IO pin input voltage
–0.3
VDD + 0.3
V
Instantaneous maximum current single pin limit (applies to
all port pins)
–25
25
mA
VDD – 0.3
VDD + 0.3
V
ID
VDDA
Analog supply voltage
2 General
2.1 AC electrical characteristics
Unless otherwise specified, propagation delays are measured from the 50% to the 50%
point, and rise and fall times are measured at the 20% and 80% points, as shown in the
following figure.
Input Signal
High
Low
VIH
80%
50%
20%
Midpoint1
VIL
Fall Time
Rise Time
The midpoint is VIL + (VIH - VIL) / 2
Figure 1. Input signal measurement reference
All digital I/O switching characteristics, unless otherwise specified, assume the output
pins have the following characteristics.
• CL=30 pF loads
• Slew rate disabled
• Normal drive strength
2.2 Nonswitching electrical specifications
Kinetis KL16 Sub-Family, Rev5 08/2014.
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Freescale Semiconductor, Inc.
General
2.2.1 Voltage and current operating requirements
Table 5. Voltage and current operating requirements
Symbol
Description
Min.
Max.
Unit
VDD
Supply voltage
1.71
3.6
V
VDDA
Analog supply voltage
1.71
3.6
V
VDD – VDDA VDD-to-VDDA differential voltage
–0.1
0.1
V
VSS – VSSA VSS-to-VSSA differential voltage
–0.1
0.1
V
• 2.7 V ≤ VDD ≤ 3.6 V
0.7 × VDD
—
V
• 1.7 V ≤ VDD ≤ 2.7 V
0.75 × VDD
—
V
• 2.7 V ≤ VDD ≤ 3.6 V
—
0.35 × VDD
V
• 1.7 V ≤ VDD ≤ 2.7 V
—
0.3 × VDD
V
0.06 × VDD
—
V
-3
—
mA
-25
—
mA
VIH
VIL
Input high voltage
Input low voltage
VHYS
Input hysteresis
IICIO
IO pin negative DC injection current — single pin
1
• VIN < VSS-0.3V
IICcont
Notes
Contiguous pin DC injection current —regional limit,
includes sum of negative injection currents of 16
contiguous pins
• Negative current injection
VODPU
Open drain pullup voltage level
VDD
VDD
V
VRAM
VDD voltage required to retain RAM
1.2
—
V
2
1. All I/O pins are internally clamped to VSS through a ESD protection diode. There is no diode connection to VDD. If VIN
greater than VIO_MIN (= VSS-0.3 V) is observed, then there is no need to provide current limiting resistors at the pads. If
this limit cannot be observed then a current limiting resistor is required. The negative DC injection current limiting
resistor is calculated as R = (VIO_MIN - VIN)/|IICIO|.
2. Open drain outputs must be pulled to VDD.
2.2.2 LVD and POR operating requirements
Table 6. VDD supply LVD and POR operating requirements
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
VPOR
Falling VDD POR detect voltage
0.8
1.1
1.5
V
—
VLVDH
Falling low-voltage detect threshold — high
range (LVDV = 01)
2.48
2.56
2.64
V
—
Low-voltage warning thresholds — high range
1
Table continues on the next page...
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Freescale Semiconductor, Inc.
Kinetis KL16 Sub-Family, Rev5 08/2014.
General
Table 6. VDD supply LVD and POR operating requirements (continued)
Symbol
Min.
Typ.
Max.
Unit
VLVW1H
Description
• Level 1 falling (LVWV = 00)
2.62
2.70
2.78
V
VLVW2H
• Level 2 falling (LVWV = 01)
2.72
2.80
2.88
V
VLVW3H
• Level 3 falling (LVWV = 10)
2.82
2.90
2.98
V
VLVW4H
• Level 4 falling (LVWV = 11)
2.92
3.00
3.08
V
—
±60
—
mV
—
1.54
1.60
1.66
V
—
VHYSH
Low-voltage inhibit reset/recover hysteresis —
high range
VLVDL
Falling low-voltage detect threshold — low
range (LVDV=00)
Notes
Low-voltage warning thresholds — low range
VLVW1L
• Level 1 falling (LVWV = 00)
VLVW2L
• Level 2 falling (LVWV = 01)
VLVW3L
• Level 3 falling (LVWV = 10)
VLVW4L
• Level 4 falling (LVWV = 11)
VHYSL
Low-voltage inhibit reset/recover hysteresis —
low range
1
1.74
1.80
1.86
V
1.84
1.90
1.96
V
1.94
2.00
2.06
V
2.04
2.10
2.16
V
—
±40
—
mV
—
VBG
Bandgap voltage reference
0.97
1.00
1.03
V
—
tLPO
Internal low power oscillator period — factory
trimmed
900
1000
1100
μs
—
1. Rising thresholds are falling threshold + hysteresis voltage
2.2.3 Voltage and current operating behaviors
Table 7. Voltage and current operating behaviors
Symbol
VOH
Description
Min.
Output high voltage — Normal drive pad (except
RESET_b)
• 2.7 V ≤ VDD ≤ 3.6 V, IOH = -5 mA
• 1.71 V ≤ VDD ≤ 2.7 V, IOH = -2.5 mA
VOH
Output high voltage — High drive pad (except
RESET_b)
• 2.7 V ≤ VDD ≤ 3.6 V, IOH = -20 mA
• 1.71 V ≤ VDD ≤ 2.7 V, IOH = -10 mA
IOHT
Output high current total for all ports
VOL
Output low voltage — Normal drive pad
Max.
Unit
Notes
1, 2
VDD – 0.5
—
V
VDD – 0.5
—
V
1, 2
VDD – 0.5
—
V
VDD – 0.5
—
V
—
100
mA
1
• 2.7 V ≤ VDD ≤ 3.6 V, IOL = 5 mA
—
0.5
V
• 1.71 V ≤ VDD ≤ 2.7 V, IOL = 2.5 mA
—
0.5
V
Table continues on the next page...
Kinetis KL16 Sub-Family, Rev5 08/2014.
7
Freescale Semiconductor, Inc.
General
Table 7. Voltage and current operating behaviors (continued)
Symbol
VOL
Description
Min.
Max.
Unit
Notes
Output low voltage — High drive pad
1
• 2.7 V ≤ VDD ≤ 3.6 V, IOL = 20 mA
—
0.5
V
• 1.71 V ≤ VDD ≤ 2.7 V, IOL = 10 mA
—
0.5
V
Output low current total for all ports
—
100
mA
IIN
Input leakage current (per pin) for full temperature
range
—
1
μA
3
IIN
Input leakage current (per pin) at 25 °C
—
0.025
μA
3
IIN
Input leakage current (total all pins) for full
temperature range
—
65
μA
3
IOZ
Hi-Z (off-state) leakage current (per pin)
—
1
μA
RPU
Internal pullup resistors
20
50
kΩ
IOLT
4
1. PTB0, PTB1, PTD6, and PTD7 I/O have both high drive and normal drive capability selected by the associated
PTx_PCRn[DSE] control bit. All other GPIOs are normal drive only.
2. The reset pin only contains an active pull down device when configured as the RESET signal or as a GPIO. When
configured as a GPIO output, it acts as a pseudo open drain output.
3. Measured at VDD = 3.6 V
4. Measured at VDD supply voltage = VDD min and Vinput = VSS
2.2.4 Power mode transition operating behaviors
All specifications except tPOR and VLLSx→RUN recovery times in the following table
assume this clock configuration:
• CPU and system clocks = 48 MHz
• Bus and flash clock = 24 MHz
• FEI clock mode
POR and VLLSx→RUN recovery use FEI clock mode at the default CPU and system
frequency of 21 MHz, and a bus and flash clock frequency of 10.5 MHz.
Table 8. Power mode transition operating behaviors
Symbol
tPOR
Description
After a POR event, amount of time from the
point VDD reaches 1.8 V to execution of the first
instruction across the operating temperature
range of the chip.
Min.
Typ.
Max.
Unit
Notes
—
—
300
μs
1
—
106
120
μs
• VLLS0 → RUN
Table continues on the next page...
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Freescale Semiconductor, Inc.
Kinetis KL16 Sub-Family, Rev5 08/2014.
General
Table 8. Power mode transition operating behaviors (continued)
Symbol
Description
• VLLS1 → RUN
Min.
Typ.
Max.
Unit
—
105
117
μs
—
47
54
μs
—
4.5
5.0
μs
—
4.5
5.0
μs
—
4.5
5.0
μs
Notes
• VLLS3 → RUN
• LLS → RUN
• VLPS → RUN
• STOP → RUN
1. Normal boot (FTFA_FOPT[LPBOOT]=11).
2.2.5 Power consumption operating behaviors
The maximum values stated in the following table represent characterized results
equivalent to the mean plus three times the standard deviation (mean + 3 sigma).
Table 9. Power consumption operating behaviors
Symbol
Description
Temp.
Typ.
Max
Unit
Note
Analog supply current
—
—
See note
mA
1
IDD_RUNCO_ CM
Run mode current in compute
operation - 48 MHz core / 24 MHz
flash/ bus disabled, LPTMR running
using 4 MHz internal reference clock,
CoreMark® benchmark code
executing from flash, at 3.0 V
—
6.1
—
mA
2
IDD_RUNCO
Run mode current in compute
operation - 48 MHz core / 24 MHz
flash / bus clock disabled, code of
while(1) loop executing from flash, at
3.0 V
—
3.8
4.4
mA
3
IDD_RUN
Run mode current - 48 MHz core / 24
MHz bus and flash, all peripheral
clocks disabled, code executing from
flash, at 3.0 V
—
4.6
5.2
mA
3
IDD_RUN
Run mode current - 48 MHz core / 24
MHz bus and flash, all peripheral
clocks enabled, code executing from
flash, at 3.0 V
at 25 °C
6.0
6.2
mA
3, 4
at 70 °C
6.2
6.4
mA
at 125 °C
6.2
6.5
mA
IDDA
Table continues on the next page...
Kinetis KL16 Sub-Family, Rev5 08/2014.
9
Freescale Semiconductor, Inc.
General
Table 9. Power consumption operating behaviors (continued)
Symbol
Description
IDD_WAIT
IDD_WAIT
Typ.
Max
Unit
Note
Wait mode current - core disabled / 48 —
MHz system / 24 MHz bus / flash
disabled (flash doze enabled), all
peripheral clocks disabled, at 3.0 V
2.7
3.2
mA
3
Wait mode current - core disabled / 24 —
MHz system / 24 MHz bus / flash
disabled (flash doze enabled), all
peripheral clocks disabled, at 3.0 V
2.1
2.6
mA
3
Stop mode current with partial stop 2
clocking option - core and system
disabled / 10.5 MHz bus, at 3.0 V
—
1.5
2.0
mA
3
Very-low-power run mode current in
—
compute operation - 4 MHz core / 0.8
MHz flash / bus clock disabled,
LPTMR running with 4 MHz internal
reference clock, CoreMark benchmark
code executing from flash, at 3.0 V
732
—
µA
5
IDD_VLPRCO
Very low power run mode current in
compute operation - 4 MHz core / 0.8
MHz flash / bus clock disabled, code
executing from flash, at 3.0 V
—
161
329
µA
6
IDD_VLPR
Very low power run mode current - 4
MHz core / 0.8 MHz bus and flash, all
peripheral clocks disabled, code
executing from flash, at 3.0 V
—
185
352
µA
6
IDD_VLPR
Very low power run mode current - 4
MHz core / 0.8 MHz bus and flash, all
peripheral clocks enabled, code
executing from flash, at 3.0 V
—
255
421
µA
4, 6
IDD_VLPW
Very low power wait mode current core disabled / 4 MHz system / 0.8
MHz bus / flash disabled (flash doze
enabled), all peripheral clocks
disabled, at 3.0 V
—
110
281
µA
6
IDD_STOP
Stop mode current at 3.0 V
at 25 °C
305
326
µA
—
at 50 °C
317
344
µA
at 70 °C
337
380
µA
at 85 °C
364
428
µA
at 105 °C
429
553
µA
at 25 °C
2.69
4.14
µA
IDD_PSTOP2
IDD_VLPRCO _CM
IDD_VLPS
IDD_LLS
Temp.
Very-low-power stop mode current at
3.0 V
Low leakage stop mode current at 3.0
V
at 50 °C
5.54
9.80
µA
at 70 °C
11.80
21.94
µA
at 85 °C
21.13
39.13
µA
at 105 °C
45.85
85.45
µA
at 25 °C
1.98
2.65
µA
at 50 °C
3.13
4.35
µA
—
—
Table continues on the next page...
10
Freescale Semiconductor, Inc.
Kinetis KL16 Sub-Family, Rev5 08/2014.
General
Table 9. Power consumption operating behaviors (continued)
Symbol
IDD_VLLS3
IDD_VLLS1
IDD_VLLS0
IDD_VLLS0
Description
Temp.
Typ.
Max
Unit
at 70 °C
5.65
8.34
µA
at 85 °C
9.58
14.29
µA
at 105 °C
20.52
31.74
µA
Very low-leakage stop mode 3 current at 25 °C
at 3.0 V
at 50 °C
1.46
2.06
µA
2.29
3.22
µA
at 70 °C
4.10
5.90
µA
at 85 °C
6.93
10.02
µA
at 105 °C
14.80
22.12
µA
Very low-leakage stop mode 1 current at 25 °C
at 3.0V
at 50 °C
0.71
1.20
µA
1.10
1.71
µA
at 70 °C
2.09
3.03
µA
at 85 °C
3.80
5.42
µA
at 105 °C
8.84
12.98
µA
Very low-leakage stop mode 0 current at 25 °C
(SMC_STOPCTRL[PORPO] = 0) at
at 50 °C
3.0 V
at 70 °C
0.40
0.88
µA
0.80
1.40
µA
1.79
2.72
µA
at 85 °C
3.50
5.10
µA
at 105 °C
8.54
12.63
µA
Very low-leakage stop mode 0 current at 25 °C
(SMC_STOPCTRL[PORPO] = 1) at
at 50 °C
3.0 V
at 70 °C
0.23
0.69
µA
0.61
1.19
µA
1.59
2.50
µA
at 85 °C
3.30
4.89
µA
at 105 °C
8.36
12.41
µA
Note
—
—
—
7
1. The analog supply current is the sum of the active or disabled current for each of the analog modules on the device.
See each module's specification for its supply current.
2. MCG configured for PEE mode. CoreMark benchmark compiled using IAR 6.40 with optimization level high, optimized
for balanced.
3. MCG configured for FEI mode.
4. Incremental current consumption from peripheral activity is not included.
5. MCG configured for BLPI mode. CoreMark benchmark compiled using IAR 6.40 with optimization level high, optimized
for balanced.
6. MCG configured for BLPI mode.
7. No brownout.
Table 10. Low power mode peripheral adders — typical value
Symbol
IIREFSTEN4MHz
Description
Temperature (°C)
4 MHz internal reference clock (IRC) adder.
Measured by entering STOP or VLPS mode
with 4 MHz IRC enabled.
Unit
-40
25
50
70
85
105
56
56
56
56
56
56
µA
Table continues on the next page...
Kinetis KL16 Sub-Family, Rev5 08/2014.
11
Freescale Semiconductor, Inc.
General
Table 10. Low power mode peripheral adders — typical value (continued)
Symbol
Description
Temperature (°C)
Unit
-40
25
50
70
85
105
IIREFSTEN32KHz
32 kHz internal reference clock (IRC) adder.
Measured by entering STOP mode with the
32 kHz IRC enabled.
52
52
52
52
52
52
µA
IEREFSTEN4MHz
External 4 MHz crystal clock adder.
Measured by entering STOP or VLPS mode
with the crystal enabled.
206
228
237
245
251
258
µA
IEREFSTEN32KHz
External 32 kHz crystal clock
adder by means of the
OSC0_CR[EREFSTEN and
EREFSTEN] bits. Measured
by entering all modes with
the crystal enabled.
VLLS1
440
490
540
560
570
580
nA
VLLS3
440
490
540
560
570
580
LLS
490
490
540
560
570
680
VLPS
510
560
560
560
610
680
STOP
510
560
560
560
610
680
ICMP
CMP peripheral adder measured by placing
the device in VLLS1 mode with CMP
enabled using the 6-bit DAC and a single
external input for compare. Includes 6-bit
DAC power consumption.
22
22
22
22
22
22
µA
IRTC
RTC peripheral adder measured by placing
the device in VLLS1 mode with external 32
kHz crystal enabled by means of the
RTC_CR[OSCE] bit and the RTC ALARM
set for 1 minute. Includes ERCLK32K (32
kHz external crystal) power consumption.
432
357
388
475
532
810
nA
IUART
UART peripheral adder
measured by placing the
device in STOP or VLPS
mode with selected clock
source waiting for RX data at
115200 baud rate. Includes
selected clock source power
consumption.
MCGIRCLK
(4 MHz
internal
reference
clock)
66
66
66
66
66
66
µA
OSCERCLK
(4 MHz
external
crystal)
214
237
246
254
260
268
MCGIRCLK
(4 MHz
internal
reference
clock)
86
86
86
86
86
86
OSCERCLK
(4 MHz
external
crystal)
235
256
265
274
280
287
ITPM
TPM peripheral adder
measured by placing the
device in STOP or VLPS
mode with selected clock
source configured for output
compare generating 100 Hz
clock signal. No load is
placed on the I/O generating
the clock signal. Includes
selected clock source and
I/O switching currents.
µA
IBG
Bandgap adder when BGEN bit is set and
device is placed in VLPx, LLS, or VLLSx
mode.
45
45
45
45
45
45
µA
IADC
ADC peripheral adder combining the
measured values at VDD and VDDA by
366
366
366
366
366
366
µA
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Freescale Semiconductor, Inc.
Kinetis KL16 Sub-Family, Rev5 08/2014.
General
Table 10. Low power mode peripheral adders — typical value
Symbol
Description
Temperature (°C)
-40
25
50
70
Unit
85
105
placing the device in STOP or VLPS mode.
ADC is configured for low power mode using
the internal clock and continuous
conversions.
2.2.5.1
Diagram: Typical IDD_RUN operating behavior
The following data was measured under these conditions:
•
•
•
•
MCG in FBE for run mode, and BLPE for VLPR mode
No GPIOs toggled
Code execution from flash with cache enabled
For the ALLOFF curve, all peripheral clocks are disabled except FTFA
Run Mode Current VS Core Frequency
Temperature = 25, VDD = 3, CACHE = Enable, Code Residence = Flash, Clocking Mode = FBE
7.00E-03
6.00E-03
Current Consumption on VDD (A)
5.00E-03
4.00E-03
All Peripheral CLK Gates
All Off
All On
3.00E-03
2.00E-03
1.00E-03
000.00E+00
'1-1
1
'1-1
2
'1-1
'1-1
'1-1
'1-1
'1-1
'1-2
3
4
6
12
24
48
CLK Ratio
Flash-Core
Core Freq (MHz)
Figure 2. Run mode supply current vs. core frequency
Kinetis KL16 Sub-Family, Rev5 08/2014.
13
Freescale Semiconductor, Inc.
General
VLPR Mode Current Vs Core Frequency
Temperature = 25, V DD = 3, CACHE = Enable, Code Residence = Flash, Clocking Mode = BLPE
400.00E-06
Current Consumption on VDD (A)
350.00E-06
300.00E-06
250.00E-06
All Peripheral CLK Gates
200.00E-06
All Off
All On
150.00E-06
100.00E-06
50.00E-06
000.00E+00
'1-1
'1-2
1
'1-2
'1-4
2
4
CLK Ratio
Flash-Core
Core Freq (MHz)
Figure 3. VLPR mode current vs. core frequency
2.2.6 EMC radiated emissions operating behaviors
Table 11. EMC radiated emissions operating behaviors
Symbol
Description
Frequency
band
(MHz)
Typ.
Unit
Notes
1, 2
VRE1
Radiated emissions voltage, band 1
0.15–50
16
dBμV
VRE2
Radiated emissions voltage, band 2
50–150
18
dBμV
VRE3
Radiated emissions voltage, band 3
150–500
11
dBμV
VRE4
Radiated emissions voltage, band 4
500–1000
13
dBμV
IEC level
0.15–1000
M
—
VRE_IEC
2, 3
1. Determined according to IEC Standard 61967-1, Integrated Circuits - Measurement of Electromagnetic Emissions, 150
kHz to 1 GHz Part 1: General Conditions and Definitions and IEC Standard 61967-2, Integrated Circuits - Measurement
of Electromagnetic Emissions, 150 kHz to 1 GHz Part 2: Measurement of Radiated Emissions—TEM Cell and
Wideband TEM Cell Method. Measurements were made while the microcontroller was running basic application code.
14
Freescale Semiconductor, Inc.
Kinetis KL16 Sub-Family, Rev5 08/2014.
General
The reported emission level is the value of the maximum measured emission, rounded up to the next whole number,
from among the measured orientations in each frequency range.
2. VDD = 3.3 V, TA = 25 °C, fOSC = 8 MHz (crystal), fSYS = 48 MHz, fBUS = 24 MHz
3. Specified according to Annex D of IEC Standard 61967-2, Measurement of Radiated Emissions—TEM Cell and
Wideband TEM Cell Method
2.2.7 Designing with radiated emissions in mind
To find application notes that provide guidance on designing your system to minimize
interference from radiated emissions:
1. Go to www.freescale.com.
2. Perform a keyword search for “EMC design.”
2.2.8 Capacitance attributes
Table 12. Capacitance attributes
Symbol
CIN
Description
Input capacitance
Min.
Max.
Unit
—
7
pF
Min.
Max.
Unit
2.3 Switching specifications
2.3.1 Device clock specifications
Table 13. Device clock specifications
Symbol
Description
Normal run mode
fSYS
System and core clock
—
48
MHz
fBUS
Bus clock
—
24
MHz
fFLASH
Flash clock
—
24
MHz
fLPTMR
LPTMR clock
—
24
MHz
VLPR and VLPS modes1
fSYS
System and core clock
—
4
MHz
fBUS
Bus clock
—
1
MHz
Flash clock
—
1
MHz
—
24
MHz
—
16
MHz
fFLASH
clock2
fLPTMR
LPTMR
fERCLK
External reference clock
Table continues on the next page...
Kinetis KL16 Sub-Family, Rev5 08/2014.
15
Freescale Semiconductor, Inc.
General
Table 13. Device clock specifications (continued)
Symbol
Description
Min.
Max.
Unit
—
16
MHz
Oscillator crystal or resonator frequency — high frequency
mode (high range) (MCG_C2[RANGE]=1x)
—
16
MHz
TPM asynchronous clock
—
8
MHz
UART0 asynchronous clock
—
8
MHz
fLPTMR_ERCLK LPTMR external reference clock
fosc_hi_2
fTPM
fUART0
1. The frequency limitations in VLPR and VLPS modes here override any frequency specification listed in the timing
specification for any other module. These same frequency limits apply to VLPS, whether VLPS was entered from RUN
or from VLPR.
2. The LPTMR can be clocked at this speed in VLPR or VLPS only when the source is an external pin.
2.3.2 General switching specifications
These general-purpose specifications apply to all signals configured for GPIO and
UART signals.
Table 14. General switching specifications
Description
Min.
Max.
Unit
Notes
GPIO pin interrupt pulse width (digital glitch filter disabled) —
Synchronous path
1.5
—
Bus clock
cycles
1
External RESET and NMI pin interrupt pulse width —
Asynchronous path
100
—
ns
2
GPIO pin interrupt pulse width — Asynchronous path
16
—
ns
2
Port rise and fall time
—
36
ns
3
1. The greater synchronous and asynchronous timing must be met.
2. This is the shortest pulse that is guaranteed to be recognized.
3. 75 pF load
2.4 Thermal specifications
2.4.1 Thermal operating requirements
Table 15. Thermal operating requirements
Symbol
Description
Min.
Max.
Unit
TJ
Die junction temperature
–40
125
°C
TA
Ambient temperature
–40
105
°C
16
Freescale Semiconductor, Inc.
Kinetis KL16 Sub-Family, Rev5 08/2014.
Peripheral operating requirements and behaviors
2.4.2 Thermal attributes
Table 16. Thermal attributes
Board type
Symbol
Single-layer (1S)
RθJA
Four-layer (2s2p)
Description
64 LQFP
48 QFN
32 QFN
Unit
Notes
Thermal resistance, junction to
ambient (natural convection)
71
83
98
°C/W
1
RθJA
Thermal resistance, junction to
ambient (natural convection)
53
30
34
°C/W
Single-layer (1S)
RθJMA
Thermal resistance, junction to
ambient (200 ft./min. air speed)
59
68
82
°C/W
Four-layer (2s2p)
RθJMA
Thermal resistance, junction to
ambient (200 ft./min. air speed)
46
24
28
°C/W
—
RθJB
Thermal resistance, junction to
board
35
12
13
°C/W
2
—
RθJC
Thermal resistance, junction to
case
21
2.3
2.3
°C/W
3
—
ΨJT
Thermal characterization
parameter, junction to package
top outside center (natural
convection)
6
5
8
°C/W
4
1. Determined according to JEDEC Standard JESD51-2, Integrated Circuits Thermal Test Method Environmental
Conditions—Natural Convection (Still Air), or EIA/JEDEC Standard JESD51-6, Integrated Circuit Thermal Test
Method Environmental Conditions—Forced Convection (Moving Air).
2. Determined according to JEDEC Standard JESD51-8, Integrated Circuit Thermal Test Method Environmental
Conditions—Junction-to-Board.
3. Determined according to Method 1012.1 of MIL-STD 883, Test Method Standard, Microcircuits, with the cold plate
temperature used for the case temperature. The value includes the thermal resistance of the interface material
between the top of the package and the cold plate.
4. Determined according to JEDEC Standard JESD51-2, Integrated Circuits Thermal Test Method Environmental
Conditions—Natural Convection (Still Air).
3 Peripheral operating requirements and behaviors
3.1 Core modules
3.1.1 SWD electricals
Table 17. SWD full voltage range electricals
Symbol
Description
Min.
Max.
Unit
Operating voltage
1.71
3.6
V
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Kinetis KL16 Sub-Family, Rev5 08/2014.
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Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
Table 17. SWD full voltage range electricals (continued)
Symbol
J1
Description
Min.
Max.
Unit
0
25
MHz
1/J1
—
ns
20
—
ns
SWD_CLK frequency of operation
• Serial wire debug
J2
SWD_CLK cycle period
J3
SWD_CLK clock pulse width
• Serial wire debug
J4
SWD_CLK rise and fall times
—
3
ns
J9
SWD_DIO input data setup time to SWD_CLK rise
10
—
ns
J10
SWD_DIO input data hold time after SWD_CLK rise
0
—
ns
J11
SWD_CLK high to SWD_DIO data valid
—
32
ns
J12
SWD_CLK high to SWD_DIO high-Z
5
—
ns
J2
J3
J3
SWD_CLK (input)
J4
J4
Figure 4. Serial wire clock input timing
SWD_CLK
J9
SWD_DIO
J10
Input data valid
J11
SWD_DIO
Output data valid
J12
SWD_DIO
J11
SWD_DIO
Output data valid
Figure 5. Serial wire data timing
18
Freescale Semiconductor, Inc.
Kinetis KL16 Sub-Family, Rev5 08/2014.
Peripheral operating requirements and behaviors
3.2 System modules
There are no specifications necessary for the device's system modules.
3.3 Clock modules
3.3.1 MCG specifications
Table 18. MCG specifications
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
fints_ft
Internal reference frequency (slow clock) —
factory trimmed at nominal VDD and 25 °C
—
32.768
—
kHz
fints_t
Internal reference frequency (slow clock) —
user trimmed
31.25
—
39.0625
kHz
—
± 0.3
± 0.6
%fdco
1
Δfdco_res_t Resolution of trimmed average DCO output
frequency at fixed voltage and temperature —
using C3[SCTRIM] and C4[SCFTRIM]
Δfdco_t
Total deviation of trimmed average DCO output
frequency over voltage and temperature
—
+0.5/-0.7
±3
%fdco
1, 2
Δfdco_t
Total deviation of trimmed average DCO output
frequency over fixed voltage and temperature
range of 0–70 °C
—
± 0.4
± 1.5
%fdco
1, 2
Internal reference frequency (fast clock) —
factory trimmed at nominal VDD and 25 °C
—
4
—
MHz
Frequency deviation of internal reference clock
(fast clock) over temperature and voltage —
factory trimmed at nominal VDD and 25 °C
—
+1/-2
±3
%fintf_ft
Internal reference frequency (fast clock) —
user trimmed at nominal VDD and 25 °C
3
—
5
MHz
fintf_ft
Δfintf_ft
fintf_t
floc_low
Loss of external clock minimum frequency —
RANGE = 00
(3/5) x
fints_t
—
—
kHz
floc_high
Loss of external clock minimum frequency —
RANGE = 01, 10, or 11
(16/5) x
fints_t
—
—
kHz
31.25
—
39.0625
kHz
20
20.97
25
MHz
40
41.94
48
MHz
—
23.99
—
MHz
2
FLL
ffll_ref
fdco
FLL reference frequency range
DCO output
frequency range
Low range (DRS = 00)
3, 4
640 × ffll_ref
Mid range (DRS = 01)
1280 × ffll_ref
fdco_t_DMX3 DCO output
frequency
2
Low range (DRS = 00)
5, 6
Table continues on the next page...
Kinetis KL16 Sub-Family, Rev5 08/2014.
19
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
Table 18. MCG specifications (continued)
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
—
47.97
—
MHz
—
180
—
ps
7
—
—
1
ms
8
48.0
—
100
MHz
—
1060
—
µA
—
600
—
µA
2.0
—
4.0
MHz
732 × ffll_ref
Mid range (DRS = 01)
1464 × ffll_ref
Jcyc_fll
FLL period jitter
• fVCO = 48 MHz
tfll_acquire
FLL target frequency acquisition time
PLL
fvco
VCO operating frequency
Ipll
PLL operating current
• PLL at 96 MHz (fosc_hi_1 = 8 MHz, fpll_ref =
2 MHz, VDIV multiplier = 48)
Ipll
PLL operating current
• PLL at 48 MHz (fosc_hi_1 = 8 MHz, fpll_ref =
2 MHz, VDIV multiplier = 24)
fpll_ref
PLL reference frequency range
Jcyc_pll
PLL period jitter (RMS)
Jacc_pll
• fvco = 48 MHz
—
120
—
ps
• fvco = 100 MHz
—
50
—
ps
PLL accumulated jitter over 1µs (RMS)
10
• fvco = 48 MHz
—
1350
—
ps
• fvco = 100 MHz
—
600
—
ps
Lock entry frequency tolerance
± 1.49
—
± 2.98
%
Dunl
Lock exit frequency tolerance
± 4.47
—
± 5.97
%
Lock detector detection time
9
10
Dlock
tpll_lock
9
—
—
10-6
150 ×
+ 1075(1/
fpll_ref)
s
11
1. This parameter is measured with the internal reference (slow clock) being used as a reference to the FLL (FEI clock
mode).
2. The deviation is relative to the factory trimmed frequency at nominal VDD and 25 °C, fints_ft.
3. These typical values listed are with the slow internal reference clock (FEI) using factory trim and DMX32 = 0.
4. The resulting system clock frequencies must not exceed their maximum specified values. The DCO frequency deviation
(Δfdco_t) over voltage and temperature must be considered.
5. These typical values listed are with the slow internal reference clock (FEI) using factory trim and DMX32 = 1.
6. The resulting clock frequency must not exceed the maximum specified clock frequency of the device.
7. This specification is based on standard deviation (RMS) of period or frequency.
8. This specification applies to any time the FLL reference source or reference divider is changed, trim value is changed,
DMX32 bit is changed, DRS bits are changed, or changing from FLL disabled (BLPE, BLPI) to FLL enabled (FEI, FEE,
FBE, FBI). If a crystal/resonator is being used as the reference, this specification assumes it is already running.
9. Excludes any oscillator currents that are also consuming power while PLL is in operation.
10. This specification was obtained using a Freescale developed PCB. PLL jitter is dependent on the noise characteristics
of each PCB and results will vary.
11. This specification applies to any time the PLL VCO divider or reference divider is changed, or changing from PLL
disabled (BLPE, BLPI) to PLL enabled (PBE, PEE). If a crystal/resonator is being used as the reference, this
specification assumes it is already running.
20
Freescale Semiconductor, Inc.
Kinetis KL16 Sub-Family, Rev5 08/2014.
Peripheral operating requirements and behaviors
3.3.2 Oscillator electrical specifications
3.3.2.1
Oscillator DC electrical specifications
Table 19. Oscillator DC electrical specifications
Symbol
Description
Min.
Typ.
Max.
Unit
VDD
Supply voltage
1.71
—
3.6
V
IDDOSC
IDDOSC
Supply current — low-power mode (HGO=0)
Notes
1
• 32 kHz
—
500
—
nA
• 4 MHz
—
200
—
μA
• 8 MHz (RANGE=01)
—
300
—
μA
• 16 MHz
—
950
—
μA
• 24 MHz
—
1.2
—
mA
• 32 MHz
—
1.5
—
mA
Supply current — high gain mode (HGO=1)
1
• 32 kHz
—
25
—
μA
• 4 MHz
—
400
—
μA
• 8 MHz (RANGE=01)
—
500
—
μA
• 16 MHz
—
2.5
—
mA
• 24 MHz
—
3
—
mA
• 32 MHz
—
4
—
mA
Cx
EXTAL load capacitance
—
—
—
2, 3
Cy
XTAL load capacitance
—
—
—
2, 3
RF
Feedback resistor — low-frequency, low-power
mode (HGO=0)
—
—
—
MΩ
Feedback resistor — low-frequency, high-gain
mode (HGO=1)
—
10
—
MΩ
Feedback resistor — high-frequency, lowpower mode (HGO=0)
—
—
—
MΩ
Feedback resistor — high-frequency, high-gain
mode (HGO=1)
—
1
—
MΩ
Series resistor — low-frequency, low-power
mode (HGO=0)
—
—
—
kΩ
Series resistor — low-frequency, high-gain
mode (HGO=1)
—
200
—
kΩ
Series resistor — high-frequency, low-power
mode (HGO=0)
—
—
—
kΩ
RS
2, 4
Series resistor — high-frequency, high-gain
mode (HGO=1)
Table continues on the next page...
Kinetis KL16 Sub-Family, Rev5 08/2014.
21
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
Table 19. Oscillator DC electrical specifications (continued)
Symbol
Vpp5
Description
Min.
Typ.
Max.
Unit
—
0
—
kΩ
Peak-to-peak amplitude of oscillation (oscillator
mode) — low-frequency, low-power mode
(HGO=0)
—
0.6
—
V
Peak-to-peak amplitude of oscillation (oscillator
mode) — low-frequency, high-gain mode
(HGO=1)
—
VDD
—
V
Peak-to-peak amplitude of oscillation (oscillator
mode) — high-frequency, low-power mode
(HGO=0)
—
0.6
—
V
Peak-to-peak amplitude of oscillation (oscillator
mode) — high-frequency, high-gain mode
(HGO=1)
—
VDD
—
V
Notes
1. VDD=3.3 V, Temperature =25 °C
2. See crystal or resonator manufacturer's recommendation
3. Cx,Cy can be provided by using the integrated capacitors when the low frequency oscillator (RANGE = 00) is used. For
all other cases external capacitors must be used.
4. When low power mode is selected, RF is integrated and must not be attached externally.
5. The EXTAL and XTAL pins should only be connected to required oscillator components and must not be connected to
any other devices.
3.3.2.2
Symbol
Oscillator frequency specifications
Table 20. Oscillator frequency specifications
Description
Min.
Typ.
Max.
Unit
fosc_lo
Oscillator crystal or resonator frequency — lowfrequency mode (MCG_C2[RANGE]=00)
32
—
40
kHz
fosc_hi_1
Oscillator crystal or resonator frequency — highfrequency mode (low range)
(MCG_C2[RANGE]=01)
3
—
8
MHz
fosc_hi_2
Oscillator crystal or resonator frequency — high
frequency mode (high range)
(MCG_C2[RANGE]=1x)
8
—
32
MHz
fec_extal
Input clock frequency (external clock mode)
—
—
48
MHz
tdc_extal
Input clock duty cycle (external clock mode)
40
50
60
%
Crystal startup time — 32 kHz low-frequency,
low-power mode (HGO=0)
—
750
—
ms
Crystal startup time — 32 kHz low-frequency,
high-gain mode (HGO=1)
—
250
—
ms
Crystal startup time — 8 MHz high-frequency
(MCG_C2[RANGE]=01), low-power mode
(HGO=0)
—
0.6
—
ms
Crystal startup time — 8 MHz high-frequency
(MCG_C2[RANGE]=01), high-gain mode
(HGO=1)
—
1
—
ms
tcst
22
Freescale Semiconductor, Inc.
Notes
1, 2
3, 4
Kinetis KL16 Sub-Family, Rev5 08/2014.
Peripheral operating requirements and behaviors
1. Other frequency limits may apply when external clock is being used as a reference for the FLL or PLL.
2. When transitioning from FEI or FBI to FBE mode, restrict the frequency of the input clock so that, when it is divided by
FRDIV, it remains within the limits of the DCO input clock frequency.
3. Proper PC board layout procedures must be followed to achieve specifications.
4. Crystal startup time is defined as the time between the oscillator being enabled and the OSCINIT bit in the MCG_S
register being set.
3.4 Memories and memory interfaces
3.4.1 Flash electrical specifications
This section describes the electrical characteristics of the flash memory module.
3.4.1.1
Flash timing specifications — program and erase
The following specifications represent the amount of time the internal charge pumps
are active and do not include command overhead.
Table 21. NVM program/erase timing specifications
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
thvpgm4
Longword Program high-voltage time
—
7.5
18
μs
—
thversscr
Sector Erase high-voltage time
—
13
113
ms
1
thversall
Erase All high-voltage time
—
52
452
ms
1
1. Maximum time based on expectations at cycling end-of-life.
3.4.1.2
Flash timing specifications — commands
Table 22. Flash command timing specifications
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
trd1sec1k
Read 1s Section execution time (flash sector)
—
—
60
μs
1
tpgmchk
Program Check execution time
—
—
45
μs
1
trdrsrc
Read Resource execution time
—
—
30
μs
1
tpgm4
Program Longword execution time
—
65
145
μs
—
tersscr
Erase Flash Sector execution time
—
14
114
ms
2
trd1all
Read 1s All Blocks execution time
—
—
1.8
ms
—
trdonce
Read Once execution time
—
—
25
μs
1
Program Once execution time
—
65
—
μs
—
tersall
Erase All Blocks execution time
—
88
650
ms
2
tvfykey
Verify Backdoor Access Key execution time
—
—
30
μs
1
tpgmonce
Kinetis KL16 Sub-Family, Rev5 08/2014.
23
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
1. Assumes 25 MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3.4.1.3
Flash high voltage current behaviors
Table 23. Flash high voltage current behaviors
Symbol
Description
IDD_PGM
IDD_ERS
3.4.1.4
Symbol
Min.
Typ.
Max.
Unit
Average current adder during high voltage
flash programming operation
—
2.5
6.0
mA
Average current adder during high voltage
flash erase operation
—
1.5
4.0
mA
Reliability specifications
Table 24. NVM reliability specifications
Description
Min.
Typ.1
Max.
Unit
Notes
Program Flash
tnvmretp10k Data retention after up to 10 K cycles
5
50
—
years
—
tnvmretp1k
Data retention after up to 1 K cycles
20
100
—
years
—
nnvmcycp
Cycling endurance
10 K
50 K
—
cycles
2
1. Typical data retention values are based on measured response accelerated at high temperature and derated to a
constant 25 °C use profile. Engineering Bulletin EB618 does not apply to this technology. Typical endurance defined in
Engineering Bulletin EB619.
2. Cycling endurance represents number of program/erase cycles at -40 °C ≤ Tj ≤ 125 °C.
3.5 Security and integrity modules
There are no specifications necessary for the device's security and integrity modules.
3.6 Analog
3.6.1 ADC electrical specifications
The 16-bit accuracy specifications listed in Table 25 and Table 26 are achievable on the
differential pins ADCx_DP0, ADCx_DM0.
All other ADC channels meet the 13-bit differential/12-bit single-ended accuracy
specifications.
24
Freescale Semiconductor, Inc.
Kinetis KL16 Sub-Family, Rev5 08/2014.
Peripheral operating requirements and behaviors
3.6.1.1
16-bit ADC operating conditions
Table 25. 16-bit ADC operating conditions
Symbol
Description
Conditions
Min.
Typ.1
Max.
Unit
Notes
VDDA
Supply voltage
Absolute
1.71
—
3.6
V
—
ΔVDDA
Supply voltage
Delta to VDD (VDD – VDDA)
-100
0
+100
mV
2
ΔVSSA
Ground voltage
Delta to VSS (VSS – VSSA)
-100
0
+100
mV
2
VREFH
ADC reference
voltage high
1.13
VDDA
VDDA
V
3
VREFL
ADC reference
voltage low
VSSA
VSSA
VSSA
V
3
VADIN
Input voltage
• 16-bit differential mode
VREFL
—
31/32 *
VREFH
V
—
• All other modes
VREFL
—
• 16-bit mode
—
8
10
pF
—
• 8-bit / 10-bit / 12-bit
modes
—
4
5
—
2
5
kΩ
—
CADIN
RADIN
RAS
Input
capacitance
Input series
resistance
Analog source
resistance
(external)
VREFH
13-bit / 12-bit modes
4
fADCK < 4 MHz
—
—
5
kΩ
fADCK
ADC conversion ≤ 13-bit mode
clock frequency
1.0
—
18.0
MHz
5
fADCK
ADC conversion 16-bit mode
clock frequency
2.0
—
12.0
MHz
5
Crate
ADC conversion ≤ 13-bit modes
rate
No ADC hardware averaging
6
20.000
—
818.330
Ksps
Continuous conversions
enabled, subsequent
conversion time
Crate
ADC conversion 16-bit mode
rate
No ADC hardware averaging
6
37.037
—
461.467
Ksps
Continuous conversions
enabled, subsequent
conversion time
1. Typical values assume VDDA = 3.0 V, Temp = 25 °C, fADCK = 1.0 MHz, unless otherwise stated. Typical values are for
reference only, and are not tested in production.
2. DC potential difference.
3. For packages without dedicated VREFH and VREFL pins, VREFH is internally tied to VDDA, and VREFL is internally tied
to VSSA.
4. This resistance is external to MCU. To achieve the best results, the analog source resistance must be kept as low as
possible. The results in this data sheet were derived from a system that had < 8 Ω analog source resistance. The
RAS/CAS time constant should be kept to < 1 ns.
5. To use the maximum ADC conversion clock frequency, CFG2[ADHSC] must be set and CFG1[ADLPC] must be clear.
Kinetis KL16 Sub-Family, Rev5 08/2014.
25
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
6. For guidelines and examples of conversion rate calculation, download the ADC calculator tool.
SIMPLIFIED
INPUT PIN EQUIVALENT
CIRCUIT
ZADIN
SIMPLIFIED
CHANNEL SELECT
CIRCUIT
Pad
leakage
due to
input
protection
ZAS
RAS
ADC SAR
ENGINE
RADIN
VADIN
CAS
VAS
RADIN
INPUT PIN
RADIN
INPUT PIN
RADIN
INPUT PIN
CADIN
Figure 6. ADC input impedance equivalency diagram
3.6.1.2
16-bit ADC electrical characteristics
Table 26. 16-bit ADC characteristics (VREFH = VDDA, VREFL = VSSA)
Symbol
Description
IDDA_ADC
Supply current
ADC
asynchronous
clock source
fADACK
Conditions1
• ADLPC = 1, ADHSC =
0
• ADLPC = 1, ADHSC =
1
• ADLPC = 0, ADHSC =
0
Min.
Typ.2
Max.
Unit
Notes
0.215
—
1.7
mA
3
1.2
2.4
3.9
MHz
2.4
4.0
6.1
MHz
tADACK =
1/fADACK
3.0
5.2
7.3
MHz
4.4
6.2
9.5
MHz
LSB4
• ADLPC = 0, ADHSC =
1
Sample Time
TUE
Total unadjusted
error
See Reference Manual chapter for sample times
• 12-bit modes
—
±4
±6.8
•
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