MMBZ27VAL

MMBZxVAL series Double ESD protection diodes for transient overvoltage suppression Rev. 01 — 1 September 2008 Product data sheet 1. Product profile 1.1 General description Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The devices are designed for ESD and transient overvoltage protection of up to two signal lines. Table 1. Product overview Package NXP MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL [1] All types available as /DG halogen-free version. Type number[1] Configuration JEDEC TO-236AB dual common anode SOT23 1.2 Features I Unidirectional ESD protection of two lines I Bidirectional ESD protection of one line I Low diode capacitance: Cd ≤ 140 pF I Rated peak pulse power: PPPM ≤ 40 W I Ultra low leakage current: IRM ≤ 5 nA I ESD protection up to 30 kV (contact discharge) I IEC 61000-4-2; level 4 (ESD) I IEC 61643-321 I AEC-Q101 qualified 1.3 Applications I Computers and peripherals I Audio and video equipment I Cellular handsets and accessories I Automotive electronic control units I Portable electronics NXP Semiconductors MMBZxVAL series Double ESD protection diodes for transient overvoltage suppression 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Per diode VRWM reverse standoff voltage MMBZ12VAL MMBZ12VAL/DG MMBZ15VAL MMBZ15VAL/DG MMBZ18VAL MMBZ18VAL/DG MMBZ20VAL MMBZ20VAL/DG MMBZ27VAL MMBZ27VAL/DG MMBZ33VAL MMBZ33VAL/DG Cd diode capacitance MMBZ12VAL MMBZ12VAL/DG MMBZ15VAL MMBZ15VAL/DG MMBZ18VAL MMBZ18VAL/DG MMBZ20VAL MMBZ20VAL/DG MMBZ27VAL MMBZ27VAL/DG MMBZ33VAL MMBZ33VAL/DG f = 1 MHz; VR = 0 V 110 85 70 65 48 45 140 105 90 80 60 55 pF pF pF pF pF pF 8.5 12 14.5 17 22 26 V V V V V V Parameter Conditions Min Typ Max Unit 2. Pinning information Table 3. Pin 1 2 3 Pinning Description cathode (diode 1) cathode (diode 2) common anode 1 2 3 3 Simplified outline Graphic symbol 1 2 006aaa154 MMBZXVAL_SER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 1 September 2008 2 of 15 NXP Semiconductors MMBZxVAL series Double ESD protection diodes for transient overvoltage suppression 3. Ordering information Table 4. Ordering information Package Name MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL MMBZ12VAL/DG MMBZ15VAL/DG MMBZ18VAL/DG MMBZ20VAL/DG MMBZ27VAL/DG MMBZ33VAL/DG plastic surface-mounted package; 3 leads SOT23 Description plastic surface-mounted package; 3 leads Version SOT23 Type number 4. Marking Table 5. Marking codes Marking code[1] *H1 *H2 *H3 *H4 *H5 *H6 Type number MMBZ12VAL/DG MMBZ15VAL/DG MMBZ18VAL/DG MMBZ20VAL/DG MMBZ27VAL/DG MMBZ33VAL/DG Marking code[1] TH* TK* TM* TP* TR* TT* Type number MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China MMBZXVAL_SER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 1 September 2008 3 of 15 NXP Semiconductors MMBZxVAL series Double ESD protection diodes for transient overvoltage suppression 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per diode PPPM IPPM rated peak pulse power rated peak pulse current MMBZ12VAL MMBZ12VAL/DG MMBZ15VAL MMBZ15VAL/DG MMBZ18VAL MMBZ18VAL/DG MMBZ20VAL MMBZ20VAL/DG MMBZ27VAL MMBZ27VAL/DG MMBZ33VAL MMBZ33VAL/DG Per device Ptot Tj Tamb Tstg [1] [2] [3] [4] Parameter Conditions tp = 10/1000 µs tp = 10/1000 µs [1][2] [1][2] Min - Max 40 2.35 1.9 1.6 1.4 1 0.87 Unit W A A A A A A total power dissipation junction temperature ambient temperature storage temperature Tamb ≤ 25 °C [3] [4] −55 −65 265 360 150 +150 +150 mW mW °C °C °C In accordance with IEC 61643-321 (10/1000 µs current waveform). Measured from pin 1 or 2 to pin 3. Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. Table 7. ESD maximum ratings Tamb = 25 °C unless otherwise specified. Symbol Per diode VESD electrostatic discharge voltage IEC 61000-4-2 (contact discharge) machine model [1] [2] Device stressed with ten non-repetitive ESD pulses. Measured from pin 1 or 2 to pin 3. [1][2] Parameter Conditions Min Max Unit - 30 2 kV kV MMBZXVAL_SER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 1 September 2008 4 of 15 NXP Semiconductors MMBZxVAL series Double ESD protection diodes for transient overvoltage suppression ESD standards compliance Conditions > 15 kV (air); > 8 kV (contact) > 8 kV Table 8. Standard Per diode IEC 61000-4-2; level 4 (ESD) MIL-STD-883; class 3 (human body model) 001aaa631 150 IPP (%) 100 100 % IPP; 10 µs 006aab319 IPP 100 % 90 % 50 % IPP; 1000 µs 50 10 % tr = 0.7 ns to 1 ns 0 1.0 2.0 3.0 tp (ms) 4.0 30 ns 60 ns t 0 Fig 1. 10/1000 µs pulse waveform according to IEC 61643-321 Fig 2. ESD pulse waveform according to IEC 61000-4-2 6. Thermal characteristics Table 9. Symbol Per device Rth(j-a) Rth(j-sp) [1] [2] [3] Thermal characteristics Parameter Conditions [1] [2] [3] Min - Typ - Max 460 340 50 Unit K/W K/W K/W thermal resistance from junction in free air to ambient thermal resistance from junction to solder point Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. Measured from pin 1 or 2 to pin 3. MMBZXVAL_SER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 1 September 2008 5 of 15 NXP Semiconductors MMBZxVAL series Double ESD protection diodes for transient overvoltage suppression 7. Characteristics Table 10. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Per diode VF VRWM forward voltage reverse standoff voltage MMBZ12VAL MMBZ12VAL/DG MMBZ15VAL MMBZ15VAL/DG MMBZ18VAL MMBZ18VAL/DG MMBZ20VAL MMBZ20VAL/DG MMBZ27VAL MMBZ27VAL/DG MMBZ33VAL MMBZ33VAL/DG IRM reverse leakage current MMBZ12VAL MMBZ12VAL/DG MMBZ15VAL MMBZ15VAL/DG MMBZ18VAL MMBZ18VAL/DG MMBZ20VAL MMBZ20VAL/DG MMBZ27VAL MMBZ27VAL/DG MMBZ33VAL MMBZ33VAL/DG VBR breakdown voltage MMBZ12VAL MMBZ12VAL/DG MMBZ15VAL MMBZ15VAL/DG MMBZ18VAL MMBZ18VAL/DG MMBZ20VAL MMBZ20VAL/DG MMBZ27VAL MMBZ27VAL/DG MMBZ33VAL MMBZ33VAL/DG VRWM = 8.5 V VRWM = 12 V VRWM = 14.5 V VRWM = 17 V VRWM = 22 V VRWM = 26 V IR = 1 mA 11.4 14.25 17.1 19 25.65 31.35 12 15 18 20 27 33 12.6 15.75 18.9 21 28.35 34.65 V V V V V V 0.1 0.1 0.1 0.1 0.1 0.1 5 5 5 5 5 5 nA nA nA nA nA nA 8.5 12 14.5 17 22 26 V V V V V V IF = 10 mA 0.9 V Conditions Min Typ Max Unit MMBZXVAL_SER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 1 September 2008 6 of 15 NXP Semiconductors MMBZxVAL series Double ESD protection diodes for transient overvoltage suppression Table 10. Characteristics …continued Tamb = 25 °C unless otherwise specified. Symbol Parameter Cd diode capacitance MMBZ12VAL MMBZ12VAL/DG MMBZ15VAL MMBZ15VAL/DG MMBZ18VAL MMBZ18VAL/DG MMBZ20VAL MMBZ20VAL/DG MMBZ27VAL MMBZ27VAL/DG MMBZ33VAL MMBZ33VAL/DG VCL clamping voltage MMBZ12VAL MMBZ12VAL/DG MMBZ15VAL MMBZ15VAL/DG MMBZ18VAL MMBZ18VAL/DG MMBZ20VAL MMBZ20VAL/DG MMBZ27VAL MMBZ27VAL/DG MMBZ33VAL MMBZ33VAL/DG SZ MMBZ12VAL MMBZ12VAL/DG MMBZ15VAL MMBZ15VAL/DG MMBZ18VAL MMBZ18VAL/DG MMBZ20VAL MMBZ20VAL/DG MMBZ27VAL MMBZ27VAL/DG MMBZ33VAL MMBZ33VAL/DG [1] [2] In accordance with IEC 61643-321(10/1000 µs current waveform). Measured from pin 1 or 2 to pin 3. [1][2] Conditions f = 1 MHz; VR = 0 V Min - Typ 110 85 70 65 48 45 Max 140 105 90 80 60 55 Unit pF pF pF pF pF pF IPPM = 2.35 A IPPM = 1.9 A IPPM = 1.6 A IPPM = 1.4 A IPPM = 1 A IPPM = 0.87 A - - 17 21 25 28 40 46 V V V V V V temperature coefficient IZ = 1 mA 8.2 11 14 15.8 23 29.8 mV/K mV/K mV/K mV/K mV/K mV/K MMBZXVAL_SER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 1 September 2008 7 of 15 NXP Semiconductors MMBZxVAL series Double ESD protection diodes for transient overvoltage suppression 103 PPPM (W) 102 006aab320 1.2 PPPM PPPM(25°C) 0.8 006aab321 10 0.4 1 10−2 10−1 1 10 102 103 tp (ms) 0 0 50 100 150 Tj (°C) 200 MMBZ27VAL: unidirectional and bidirectional Tamb = 25 °C Fig 3. Rated peak pulse power as a function of exponential pulse duration (rectangular waveform); typical values 006aab322 Fig 4. Relative variation of rated peak pulse power as a function of junction temperature; typical values 006aab323 100 Cd (pF) 80 102 IRM (nA) 10 60 1 40 (1) 10−1 20 (2) (3) (4) 10−2 0 0 5 10 15 20 25 VR ( V) 10−3 −75 −25 25 75 125 175 Tamb (°C) f = 1 MHz; Tamb = 25 °C (1) MMBZ15VAL: unidirectional (2) MMBZ15VAL: bidirectional (3) MMBZ27VAL: unidirectional (4) MMBZ27VAL: bidirectional MMBZ27VAL: VRWM = 22 V Fig 5. Diode capacitance as a function of reverse voltage; typical values Fig 6. Reverse leakage current as a function of ambient temperature; typical values MMBZXVAL_SER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 1 September 2008 8 of 15 NXP Semiconductors MMBZxVAL series Double ESD protection diodes for transient overvoltage suppression I IPPM IPP −VCL −VBR −VRWM −IRM −IR − P-N V −VCL −VBR −VRWM IR IRM −IRM −IR VRWM VBR VCL + − + −IPP −IPPM 006aab324 −IPP −IPPM 006aab325 Fig 7. V-I characteristics for a unidirectional ESD protection diode Fig 8. V-I characteristics for a bidirectional ESD protection diode 8. Application information The MMBZxVAL series is designed for the protection of up to two unidirectional data or signal lines from the damage caused by ESD and surge pulses. The devices may be used on lines where the signal polarities are either positive or negative with respect to ground. The devices provide a surge capability of 40 W per line for a 10/1000 µs waveform. line 1 to be protected line 2 to be protected MMBZxVAL GND line 1 to be protected MMBZxVAL GND unidirectional protection of two lines bidirectional protection of one line 006aab326 Fig 9. Typical application: ESD and transient voltage protection of data lines MMBZXVAL_SER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 1 September 2008 9 of 15 NXP Semiconductors MMBZxVAL series Double ESD protection diodes for transient overvoltage suppression Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the devices as close to the input terminal or connector as possible. 2. The path length between the device and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. 9. Test information 9.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 10. Package outline 3.0 2.8 3 1.1 0.9 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 Dimensions in mm 0.48 0.38 0.15 0.09 04-11-04 Fig 10. Package outline SOT23 (TO-236AB) MMBZXVAL_SER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 1 September 2008 10 of 15 NXP Semiconductors MMBZxVAL series Double ESD protection diodes for transient overvoltage suppression 11. Packing information Table 11. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL MMBZ12VAL/DG MMBZ15VAL/DG MMBZ18VAL/DG MMBZ20VAL/DG MMBZ27VAL/DG MMBZ33VAL/DG [1] For further information and the availability of packing methods, see Section 15. Package SOT23 Description 4 mm pitch, 8 mm tape and reel Packing quantity 3000 -215 10000 -235 SOT23 4 mm pitch, 8 mm tape and reel -215 -235 MMBZXVAL_SER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 1 September 2008 11 of 15 NXP Semiconductors MMBZxVAL series Double ESD protection diodes for transient overvoltage suppression 12. Soldering 3.3 2.9 1.9 solder lands solder resist 3 1.7 2 solder paste 0.6 (3×) occupied area Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr 0.7 (3×) Fig 11. Reflow soldering footprint SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 2.6 solder resist occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 12. Wave soldering footprint SOT23 (TO-236AB) MMBZXVAL_SER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 1 September 2008 12 of 15 NXP Semiconductors MMBZxVAL series Double ESD protection diodes for transient overvoltage suppression 13. Revision history Table 12. Revision history Release date 20080901 Data sheet status Product data sheet Change notice Supersedes Document ID MMBZXVAL_SER_1 MMBZXVAL_SER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 1 September 2008 13 of 15 NXP Semiconductors MMBZxVAL series Double ESD protection diodes for transient overvoltage suppression 14. Legal information 14.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 14.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. ESD protection devices — These products are only intended for protection against ElectroStatic Discharge (ESD) pulses and are not intended for any other usage including, without limitation, voltage regulation applications. NXP Semiconductors accepts no liability for use in such applications and therefore such use is at the customer’s own risk. 14.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. 14.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 15. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com MMBZXVAL_SER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 1 September 2008 14 of 15 NXP Semiconductors MMBZxVAL series Double ESD protection diodes for transient overvoltage suppression 16. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 10 11 12 13 14 14.1 14.2 14.3 14.4 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Application information. . . . . . . . . . . . . . . . . . . 9 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 Quality information . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information. . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 1 September 2008 Document identifier: MMBZXVAL_SER_1