Freescale Semiconductor
Technical Data
Document Number: MMG1001NT1
Rev. 8, 3/2007
Features
• Specified for 79 - , 112 - and 132 - Channel Loading
• Excellent Distortion Performance
• Built - in Input Diode Protection
• GaAs FET Transistor Technology
• Unconditionally Stable Under All Load Conditions
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 16 mm, 13 inch Reel.
Applications
• CATV Systems Operating in the 40 to 870 MHz Frequency Range
• Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk
Distribution Amplifiers for CATV Systems
• Output Stage Amplifier on Applications Requiring Low Power Dissipation
and High Output Performance
• Driver Amplifier in Linear General Purpose Applications
Description
• 24 Vdc Supply or 12 Vdc Supply with Bias Change, 40 to 870 MHz, CATV
Integrated Forward Amplifier Module
MMG1001NT1
870 MHz
19 dB GAIN
132 - CHANNEL
CATV INTEGRATED AMPLIFIER
MODULE
16
1
CASE 978 - 03
PFP - 16
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
RF Voltage Input (Single Tone)
Vin
+65
dBmV
DC Supply Voltage
24 V Application
12 V Application
VCC
Vdc
+26
+14
Operating Case Temperature Range
TC
- 20 to +100
°C
Storage Temperature Range
Tstg
- 40 to +100
°C
Symbol
Value
Unit
RθJC
6.6
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Pin 3
Pin 15
Q3
Q1
Pin 4
RG3
RS1
Pin 5
Pin 13
RS2
RG4
Pin 6
Q2
Q4
Pin 7
Figure 1. Functional Diagram
© Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Pin 11
NC
1
16
NC
NC
2
15
VD3
VG1
3
14
NC
VS1
4
13
VGC
VC
5
12
NC
VS2
6
11
VD4
VG2
NC
7
8
10
9
NC
NC
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Gallium Arsenide
CATV Integrated Amplifier Module
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
MMG1001NT1
1
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (minimum)
Machine Model
M1 (minimum)
Charge Device Model
C5 (minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
3
260
°C
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Characteristic
ARCHIVE INFORMATION
Frequency Range
Symbol
Min
Typ
Max
Unit
BW
40
—
870
MHz
Power Gain
50 MHz
870 MHz
Gp
—
—
18
19
—
—
dB
Slope
40 - 870 MHz
S
—
0.6
—
dB
Gain Flatness (40 - 870 MHz, Peak to Valley)
GF
—
0.5
—
dB
Input Return Loss (Zo = 75 Ohms)
IRL
—
—
21
19
22
—
—
—
—
—
22
17
—
—
Output Return Loss (Zo = 75 Ohms)
f = 40 - 160 MHz
f = 161 - 450 MHz
f = 451 - 870 MHz
dB
ORL
f = 40 - 400 MHz
f = 401 - 870 MHz
dB
Composite Second Order
(Vout = +44 dBmV/ch., Worst Case)
(Vout = +46 dBmV/ch., Worst Case)
(Vout = +48 dBmV/ch., Worst Case)
132 - Channel FLAT
112 - Channel FLAT
79 - Channel FLAT
CSO132
CSO112
CSO79
—
—
—
- 65
- 65
- 71
- 58
- 59
- 62
Cross Modulation Distortion @ Ch 2
(Vout = +44 dBmV/ch., FM = 55 MHz)
(Vout = +46 dBmV/ch., FM = 55 MHz)
(Vout = +48 dBmV/ch., FM = 55 MHz)
132 - Channel FLAT
112 - Channel FLAT
79 - Channel FLAT
XMD132
XMD112
XMD79
—
—
—
- 64
- 63
- 62
- 52
- 52
- 52
Composite Triple Beat
(Vout = +44 dBmV/ch., Worst Case)
(Vout = +46 dBmV/ch., Worst Case)
(Vout = +48 dBmV/ch., Worst Case)
132 - Channel FLAT
112 - Channel FLAT
79 - Channel FLAT
CTB132
CTB112
CTB79
—
—
—
- 63
- 64
- 65
- 56
- 56
- 58
NF
—
—
4
4
5.0
5.0
IDC
230
250
265
Noise Figure
dBc
dBc
dBc
50 MHz
870 MHz
DC Current (VDC = 24 V, TC = - 20° to +100°C)
dB
mA
ARCHIVE INFORMATION
Table 5. Electrical Characteristics for 24 V Application (VCC = 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted)
(continued)
MMG1001NT1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics for 12 V Application (VCC = 12 Vdc, TC = +30°C, 75 Ω system unless otherwise noted)
(continued)
Frequency Range
Min
Typ
Max
Unit
BW
40
—
870
MHz
Power Gain
50 MHz
870 MHz
Gp
—
—
18
19
—
—
dB
Slope
40 - 870 MHz
S
—
0.6
—
dB
Gain Flatness (40 - 870 MHz, Peak to Valley)
GF
—
0.5
—
dB
Input Return Loss (Zo = 75 Ohms)
IRL
—
—
21
19
19
—
—
—
—
—
—
19
17
15
—
—
—
Output Return Loss (Zo = 75 Ohms)
ARCHIVE INFORMATION
Symbol
f = 40 - 160 MHz
f = 161 - 450 MHz
f = 451 - 870 MHz
dB
ORL
f = 40 - 400 MHz
f = 401 - 750 MHz
f = 751 - 870 MHz
dB
Composite Second Order
(Vout = +42 dBmV/ch., Worst Case)
(Vout = +42 dBmV/ch., Worst Case)
112 - Channel FLAT
79 - Channel FLAT
CSO112
CSO79
—
—
- 65
- 71
—
—
Cross Modulation Distortion @ Ch 2
(Vout = +42 dBmV/ch., FM = 55 MHz)
(Vout = +42 dBmV/ch., FM = 55 MHz)
112 - Channel FLAT
79 - Channel FLAT
XMD112
XMD79
—
—
- 63
- 62
—
—
Composite Triple Beat
(Vout = +42 dBmV/ch., Worst Case)
(Vout = +42 dBmV/ch., Worst Case)
112 - Channel FLAT
79 - Channel FLAT
CTB112
CTB79
—
—
- 64
- 65
—
—
NF
—
—
4
4
5.0
5.0
dB
IDC
190
210
225
mA
Noise Figure
dBc
dBc
dBc
50 MHz
870 MHz
DC Current (VDC = 12 V, TC = - 20° to +100°C)
ARCHIVE INFORMATION
Characteristic
MMG1001NT1
RF Device Data
Freescale Semiconductor
3
C10
C7
R13
R9
Pin 4
C12
Pin 13 R15
Pin 6
R12 C6
C1
ARCHIVE INFORMATION
T2
R18 Pin 5
D3
L2
Pin 11
C8
C11
VCC
Pin 7
RF
OUTPUT
C9
D2
R16
C4
R10
R17
R14
R1
R19
R2
R7
R6
R3
D1
Q2
R4
Q1
C2
R8
R5
Figure 3. MMG1001NT1 50 - 870 MHz Test Circuit Schematic
Table 6. MMG1001NT1 50 - 870 MHz Test Circuit Component Designations and Values
24 V Application
Designation
g
Description
12 V Application
Part Number
ARCHIVE INFORMATION
C3
T1
Pin 3
C5
R11
RF
INPUT
L1
Pin 15
Description
Part Number
Manufacturer
C1, C7, C8,
C11
220 pF Chip Capacitors
C0603C221J5RAC
220 pF Chip Capacitors
C0603C221J5RAC
Kemet
C2, C3, C4,
C9, C10
0.01 mF Chip Capacitors
C0603C103J5RAC
0.01 mF Chip Capacitors
C0603C103J5RAC
Kemet
C5, C6
1.8 pF Chip Capacitors
06035J1R8BS
1.8 pF Chip Capacitors
06035J1R8BS
AVX
C12
5.6 pF Chip Capacitor
06035J5R6BS
5.6 pF Chip Capacitor
06035J5R6BS
AVX
D1
5.1 V Zener Diode
MM3Z5V1T1G
5.1 V Zener Diode
MM3Z5V1T1G
ON Semi
D2
27 V Zener Diode
MM3Z27VT1G
27 V Zener Diode
MM3Z27VT1G
ON Semi
D3
Transient Voltage Suppressor
1.5SMC27AT3G
Transient Voltage Suppressor
1.5SMC27AT3G
ON Semi
L1, L2
22 nH Chip Inductors
HK160822NJ-T
22 nH Chip Inductors
HK160822NJ-T
Taiyo Yuden
Q1, Q2
Dual Transistors Package
MBT3904DW1T1G
Dual Transistors Package
MBT3904DW1T1G
ON Semi
R1
2.2 kW, 1/4 W Chip Resistor
CRCW12062201FKTA
820 W, 1/4 W Chip Resistor
CRCW12068200FKTA
Vishay
R2
560 W, 1/10 W Chip Resistor
CRCW06035600FKTA
560 W, 1/10 W Chip Resistor
CRCW06035600FKTA
Vishay
R3
82 W, 1/10 W Chip Resistor
CRCW06030820FKTA
40 W, 1/10 W Chip Resistor
CRCW06030400FKTA
Vishay
R4
820 W, 1/10 W Chip Resistor
CRCW06038200FKTA
150 W, 1/10 W Chip Resistor
CRCW06031500FKTA
Vishay
R5
820 W, 1/10 W Chip Resistor
CRCW06038200FKTA
100 W, 1/10 W Chip Resistor
CRCW06031000FKTA
Vishay
R6
120 W, 1/10 W Chip Resistor
CRCW06031200FKTA
120 W, 1/10 W Chip Resistor
CRCW06031200FKTA
Vishay
R7
1.5 kW, 1/10 W Chip Resistor
CRCW06031501FKTA
1.5 kW, 1/10 W Chip Resistor
CRCW06031501FKTA
Vishay
R8
12 W, 1 W Chip Resistor
CRCW25120120FKTA
4.8 W, 1 W Chip Resistor
CRCW251204R8FKTA
Vishay
R9, R10, R15
470 W, 1/10 W Chip Resistors
CRCW06034700FKTA
470 W, 1/10 W Chip Resistors
CRCW06034700FKTA
Vishay
R11, R12
18 W, 1/10 W Chip Resistors
CRCW06030180FKTA
18 W, 1/10 W Chip Resistors
CRCW06030180FKTA
Vishay
R13, R14
910 W, 1/10 W Chip Resistors
CRCW06039100FKTA
910 W, 1/10 W Chip Resistors
CRCW06039100FKTA
Vishay
R16
2 kW, 1/10 W Chip Resistor
CRCW06032001FKTA
2.7 kW, 1/10 W Chip Resistor
CRCW06032701FKTA
Vishay
R17
6.2 kW, 1/10 W Chip Resistor
CRCW06036201FKTA
6.2 kW, 1/10 W Chip Resistor
CRCW06036201FKTA
Vishay
R18
15 W, 1/10 W Chip Resistor
CRCW06030150FKTA
15 W, 1/10 W Chip Resistor
CRCW06030150FKTA
Vishay
R19
0 W, 1/10 W Chip Resistor
CRCW06030000FKTA
0 W, 1/10 W Chip Resistor
CRCW06030000FKTA
Vishay
T1
Input Transformer
None
Input Transformer
None
None
T2
Output Transformer
None
Output Transformer
None
None
PCB
FR4, 62 mil, εr = 4.81
None
FR4, 62 mil, εr = 4.81
None
None
MMG1001NT1
4
RF Device Data
Freescale Semiconductor
MMG1001R2
Rev 0
R16
R7
R19
C7
ARCHIVE INFORMATION
R9
Q1
R11
Q2
R13
L1
C3
C9
R15
C5
R6
T1
T2
L2
R18
C6
R8
C2
C1
C12
C4
R10 R12
C8
D2
R14
C11
R17
C10
R3
R2
R4
R1
D1
D3
GND
Not
Active
VCC
Note: 24 V Application, VCC = 24 V
12 V Application, VCC = 12 V
ARCHIVE INFORMATION
R5
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the
Freescale Semiconductor signature/logo. PCBs may have either Motorola or
Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
Figure 4. MMG1001NT1 50 - 870 MHz Test Circuit Component Layout
MMG1001NT1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS FOR 24 V APPLICATION
48 dBmV
46 dBmV
−65
50 dBmV
44 dBmV
−70
42 dBmV
79−Channel Loading, Flat
−75
ARCHIVE INFORMATION
0
200
400
600
f, FREQUENCY (MHz)
Figure 5. Composite Triple Beat versus
Frequency
CSO, COMPOSITE SECOND ORDER (dBc)
−65
48 dBmV
50 dBmV
46 dBmV
−70
−75
42 dBmV
−80
44 dBmV
79−Channel Loading, Flat
−85
200
0
400
600
f, FREQUENCY (MHz)
XMD, CROSS MODULATION DISTORTION (dBc)
Figure 6. Composite Second Order versus
Frequency
−55
48 dBmV
50 dBmV
ARCHIVE INFORMATION
CTB, COMPOSITE TRIPLE BEAT (dBc)
−60
−60
46 dBmV
−65
44 dBmV
42 dBmV
−70
79−Channel Loading, Flat
−75
0
200
400
600
f, FREQUENCY (MHz)
Figure 7. Cross Modulation Distortion versus
Frequency
MMG1001NT1
6
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
h X 45 _
A
1
14 x e
16
D
e/2
D1
8
9
E1
8X
BOTTOM VIEW
E
C B
S
ÉÉÉ
ÇÇÇ
ÇÇÇ
ÉÉÉ
b1
Y
c
A A2
DATUM
PLANE
SEATING
PLANE
H
C
c1
b
aaa
M
ccc C
q
W
GAUGE
PLANE
W
L
C A
SECT W - W
L1
ARCHIVE INFORMATION
bbb
M
B
A1
1.000
0.039
DETAIL Y
CASE 978 - 03
ISSUE C
PFP- 16
S
NOTES:
1. CONTROLLING DIMENSION: MILLIMETER.
2. DIMENSIONS AND TOLERANCES PER ASME
Y14.5M, 1994.
3. DATUM PLANE −H− IS LOCATED AT BOTTOM OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE BOTTOM OF THE PARTING LINE.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS
0.250 PER SIDE. DIMENSIONS D AND E1 DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
5. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE
b DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
DIM
A
A1
A2
D
D1
E
E1
E2
L
L1
b
b1
c
c1
e
h
q
aaa
bbb
ccc
MILLIMETERS
MIN
MAX
2.000
2.300
0.025
0.100
1.950
2.100
6.950
7.100
4.372
5.180
8.850
9.150
6.950
7.100
4.372
5.180
0.466
0.720
0.250 BSC
0.300
0.432
0.300
0.375
0.180
0.279
0.180
0.230
0.800 BSC
−−− 0.600
0_
7_
0.200
0.200
0.100
ARCHIVE INFORMATION
E2
MMG1001NT1
RF Device Data
Freescale Semiconductor
7
REVISION HISTORY
The following table summarizes revisions to this document.
Date
7
Oct. 2006
•
8
Mar. 2007
• Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part numbers
and added Manufacturer column, p. 4
Description
Replaced “N suffix indicates 260°C reflow capable” bullet with RoHS Compliant, p. 1
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Revision
MMG1001NT1
8
RF Device Data
Freescale Semiconductor
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ARCHIVE INFORMATION
ARCHIVE INFORMATION
How to Reach Us:
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2007-2008. All rights reserved.
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MMG1001NT1
Document
Number:
RF
Device
DataMMG1001NT1
Rev. 8, 3/2007Semiconductor
Freescale
9
