Freescale Semiconductor
Technical Data
Document Number: MMG3010NT1
Rev. 5, 3/2008
Heterojunction Bipolar Transistor
(InGaP HBT)
Broadband High Linearity Amplifier
MMG3010NT1
0 - 6000 MHz, 15 dB
17 dBm
InGaP HBT
Features
• Frequency: 0 to 6000 MHz
• P1dB: 17 dBm @ 900 MHz
• Small - Signal Gain: 15 dB @ 900 MHz
• Third Order Output Intercept Point: 31 dBm @ 900 MHz
• Single 5 Volt Supply
• Internally Matched to 50 Ohms
• Low Cost SOT - 89 Surface Mount Package
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Table 1. Typical Performance (1)
3
CASE 1514 - 02, STYLE 1
SOT - 89
PLASTIC
Table 2. Maximum Ratings
Characteristic
Symbol
900
MHz
2140
MHz
3500
MHz
Unit
Small - Signal Gain
(S21)
Gp
15
14
12
dB
Input Return Loss
(S11)
IRL
- 15
- 17
- 22
dB
Output Return Loss
(S22)
ORL
- 25
- 25
- 15
dB
Power Output @1dB
Compression
P1db
17
16.5
15.5
dBm
IP3
31
30
28
dBm
Third Order Output
Intercept Point
12
Rating
Symbol
Value
Unit
Supply Voltage
VCC
7
V
Supply Current
ICC
300
mA
RF Input Power
Pin
10
dBm
Storage Temperature Range
Tstg
- 65 to +150
°C
Junction Temperature (2)
TJ
150
°C
2. For reliable operation, the junction temperature should not
exceed 150°C.
1. VCC = 5 Vdc, TC = 25°C, 50 ohm system
ARCHIVE INFORMATION
ARCHIVE INFORMATION
The MMG3010NT1 is a General Purpose Amplifier that is internally
input and output matched. It is designed for a broad range of Class A,
small - signal, high linearity, general purpose applications. It is suitable
for applications with frequencies from 0 to 6000 MHz such as Cellular,
P C S , B W A , W L L , P H S , C AT V, V H F, U H F, U M T S a n d g e n e r a l
small - signal RF.
Table 3. Thermal Characteristics (VCC = 5 Vdc, ICC = 54 mA, TC = 25°C)
Characteristic
Thermal Resistance, Junction to Case
Symbol
Value (3)
Unit
RθJC
83
°C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2005-2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MMG3010NT1
1
Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz, TC = 25°C, 50 ohm system, in Freescale Application Circuit)
Symbol
Min
Typ
Max
Unit
Small - Signal Gain (S21)
Characteristic
Gp
14
15
—
dB
Input Return Loss (S11)
IRL
—
- 15
—
dB
Output Return Loss (S22)
ORL
—
- 25
—
dB
Power Output @ 1dB Compression
P1dB
—
17
—
dBm
Third Order Output Intercept Point
IP3
—
31
—
dBm
Noise Figure
NF
—
4.5
—
dB
Supply Current (1)
ICC
46
54
63
mA
Supply Voltage (1)
VCC
—
5
—
V
ARCHIVE INFORMATION
ARCHIVE INFORMATION
1. For reliable operation, the junction temperature should not exceed 150°C.
MMG3010NT1
2
RF Device Data
Freescale Semiconductor
Table 5. Functional Pin Description
Pin
Number
2
Pin Function
1
RFin
2
Ground
3
RFout/DC Supply
1
2
3
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Class
Human Body Model (per JESD 22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD 22 - A115)
A (Minimum)
Charge Device Model (per JESD 22 - C101)
IV (Minimum)
Table 7. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
1
260
°C
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Test Methodology
MMG3010NT1
RF Device Data
Freescale Semiconductor
3
50 OHM TYPICAL CHARACTERISTICS
0
TC = 85°C
25°C
−10
S11
15
S11, S22 (dB)
- 40°C
10
−20
S22
−30
VCC = 5 Vdc
ICC = 54 mA
VCC = 5 Vdc
−40
0
1
2
3
0
4
2
3
4
f, FREQUENCY (GHz)
Figure 2. Small - Signal Gain (S21) versus
Frequency
Figure 3. Input/Output Return Loss versus
Frequency
P1dB, 1 dB COMPRESSION POINT (dBm)
19
16
900 MHz
15
2140 MHz
1960 MHz
14
13
2600 MHz
12
3500 MHz
11
VCC = 5 Vdc
ICC = 54 mA
10
8
10
9
12
11
13
14
17
16
15
14
VCC = 5 Vdc
ICC = 54 mA
13
0.5
16
1
1.5
2
2.5
3
Pout, OUTPUT POWER (dBm)
f, FREQUENCY (GHz)
Figure 4. Small - Signal Gain versus Output
Power
Figure 5. P1dB versus Frequency
100
90
80
70
60
50
40
30
20
10
0
4
18
12
15
4.2
4.4
4.6
4.8
5
5.2
5.4
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
Gp, SMALL−SIGNAL GAIN (dB)
1
f, FREQUENCY (GHz)
17
ICC, COLLECTOR CURRENT (mA)
ARCHIVE INFORMATION
5
3.5
36
33
ARCHIVE INFORMATION
Gp, SMALL−SIGNAL GAIN (dB)
20
30
27
VCC = 5 Vdc
ICC = 54 mA
1 MHz Tone Spacing
24
21
0
1
2
3
VCC, COLLECTOR VOLTAGE (V)
f, FREQUENCY (GHz)
Figure 6. Collector Current versus Collector
Voltage
Figure 7. Third Order Output Intercept Point
versus Frequency
4
MMG3010NT1
4
RF Device Data
Freescale Semiconductor
33
30
27
24
f = 900 MHz
1 MHz Tone Spacing
21
4.95
4.9
5
5.05
5.1
VCC, COLLECTOR VOLTAGE (V)
33
32
31
30
29
28
VCC = 5 Vdc
f = 900 MHz
1 MHz Tone Spacing
27
26
−40
−20
20
40
60
80
100
T, TEMPERATURE (_C)
Figure 9. Third Order Output Intercept Point
versus Case Temperature
105
−30
−40
MTTF (YEARS)
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
0
−50
−60
VCC = 5 Vdc
ICC = 54 mA
f = 900 MHz
1 MHz Tone Spacing
−70
−80
−3
104
103
0
6
3
9
12
120
15
125
Pout, OUTPUT POWER (dBm)
Figure 10. Third Order Intermodulation versus
Output Power
6
4
2
VCC = 5 Vdc
ICC = 54 mA
0
1
2
3
135
140
145
150
NOTE: The MTTF is calculated with VCC = 5 Vdc, ICC = 54 mA
Figure 11. MTTF versus Junction Temperature
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
8
0
130
TJ, JUNCTION TEMPERATURE (°C)
4
−20
VCC = 5 Vdc, ICC = 54 mA, f = 2140 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)
−30
ARCHIVE INFORMATION
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
36
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
NF, NOISE FIGURE (dB)
ARCHIVE INFORMATION
50 OHM TYPICAL CHARACTERISTICS
−40
−50
−60
−70
−3
0
3
6
9
12
f, FREQUENCY (GHz)
Pout, OUTPUT POWER (dBm)
Figure 12. Noise Figure versus Frequency
Figure 13. Single - Carrier W - CDMA Adjacent
Channel Power Ratio versus Output Power
15
MMG3010NT1
RF Device Data
Freescale Semiconductor
5
50 OHM APPLICATION CIRCUIT: 40- 300 MHz
VSUPPLY
R1
C3
C4
L1
Z1
DUT
Z2
ARCHIVE INFORMATION
C1
Z1, Z5
Z2
Z3
Z3
Z4
Z5
VCC
0.347″ x 0.058″ Microstrip
0.575″ x 0.058″ Microstrip
0.172″ x 0.058″ Microstrip
RF
OUTPUT
C2
Z4
PCB
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, εr = 4.1
Figure 14. 50 Ohm Test Circuit Schematic
20
S21
S21, S11, S22 (dB)
10
R1
0
C4
C3
L1
−10
S11
C2
C1
−20
−30
S22
VCC = 5 Vdc
ICC = 54 mA
MMG30XX
Rev 2
−40
100
0
200
300
400
500
f, FREQUENCY (MHz)
Figure 15. S21, S11 and S22 versus Frequency
Figure 16. 50 Ohm Test Circuit Component Layout
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C3
0.01 μF Chip Capacitors
C0603C103J5RAC
Kemet
C4
1000 pF Chip Capacitor
C0603C102J5RAC
Kemet
L1
470 nH Chip Inductor
BK2125HM471 - T
Taiyo Yuden
R1
0 W Chip Resistor
ERJ3GEY0R00V
Panasonic
ARCHIVE INFORMATION
RF
INPUT
MMG3010NT1
6
RF Device Data
Freescale Semiconductor
50 OHM APPLICATION CIRCUIT: 300 - 3600 MHz
VSUPPLY
R1
C3
C4
L1
Z1
DUT
Z2
Z1, Z5
Z2
Z3
Z4
Z5
VCC
0.347″ x 0.058″ Microstrip
0.575″ x 0.058″ Microstrip
0.172″ x 0.058″ Microstrip
C2
Z4
PCB
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, εr = 4.1
Figure 17. 50 Ohm Test Circuit Schematic
20
10
S21, S11, S22 (dB)
ARCHIVE INFORMATION
C1
Z3
RF
OUTPUT
S21
R1
0
C4
C3
L1
−10
S11
C2
C1
−20
−30
VCC = 5 Vdc
ICC = 54 mA
S22
−40
300
800
1300
1800
2300
2800
3300
MMG30XX
Rev 2
3800
f, FREQUENCY (MHz)
Figure 18. S21, S11 and S22 versus Frequency
Figure 19. 50 Ohm Test Circuit Component Layout
Table 9. 50 Ohm Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
150 pF Chip Capacitors
C0603C151J5RAC
Kemet
C3
0.01 μF Chip Capacitor
C0603C103J5RAC
Kemet
C4
1000 pF Chip Capacitor
C0603C102J5RAC
Kemet
L1
56 nH Chip Inductor
HK160856NJ - T
Taiyo Yuden
R1
0 W Chip Resistor
ERJ3GEY0R00V
Panasonic
ARCHIVE INFORMATION
RF
INPUT
MMG3010NT1
RF Device Data
Freescale Semiconductor
7
50 OHM TYPICAL CHARACTERISTICS
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
100
0.18961
174.356
6.08599
176.121
0.10045
- 1.147
0.01890
- 117.716
150
0.18946
172.591
6.06991
173.709
0.10051
- 1.684
0.01961
- 119.073
200
0.18931
170.087
6.05558
171.476
0.10055
- 2.764
0.02022
- 121.834
250
0.18916
168.286
6.04027
169.492
0.10060
- 3.23
0.02108
- 123.647
300
0.18900
166.103
6.03125
167.447
0.10065
- 3.883
0.02178
- 125.155
350
0.18887
163.926
6.01832
165.299
0.10069
- 4.61
0.02240
- 127.572
400
0.18873
161.691
6.00664
163.288
0.10073
- 5.218
0.02324
- 129.668
450
0.18856
159.363
5.99750
161.184
0.10078
- 5.914
0.02417
- 131.224
500
0.18844
157.207
5.98612
159.055
0.10085
- 6.577
0.02490
- 133.739
550
0.18829
154.948
5.97231
157.036
0.10090
- 7.176
0.02589
- 135.854
600
0.18813
152.775
5.95537
154.979
0.10098
- 7.816
0.02683
- 137.345
650
0.18799
150.556
5.94078
152.921
0.10111
- 8.444
0.02784
- 139.784
700
0.18783
148.43
5.92660
150.895
0.10103
- 9.124
0.02895
- 141.384
750
0.18769
146.278
5.90891
148.835
0.10115
- 9.76
0.03030
- 143.84
800
0.18753
144.103
5.88998
146.803
0.10113
- 10.388
0.03176
- 145.852
850
0.18738
142.071
5.86905
144.751
0.10130
- 11.106
0.03328
- 147.52
900
0.18723
140.126
5.84578
142.751
0.10126
- 11.715
0.03472
- 148.773
950
0.18703
138.174
5.82588
140.772
0.10142
- 12.347
0.03683
- 150.721
1000
0.18689
136.334
5.80670
138.776
0.10134
- 13.049
0.03847
- 153.215
1050
0.18674
134.574
5.77963
136.782
0.10156
- 13.635
0.04077
- 155.358
1100
0.18657
132.862
5.75495
134.777
0.10146
- 14.317
0.04304
- 159.06
1150
0.18643
131.57
5.72982
132.79
0.10159
- 14.945
0.04551
- 162.691
1200
0.18629
130.147
5.70191
130.817
0.10169
- 15.594
0.04827
- 166.671
1250
0.18613
128.841
5.67762
128.866
0.10184
- 16.271
0.05112
- 170.497
1300
0.18599
127.621
5.65132
126.933
0.10183
- 16.958
0.05460
- 174.453
1350
0.18582
126.515
5.62394
124.986
0.10196
- 17.615
0.05759
- 178.275
1400
0.18568
125.418
5.59479
123.074
0.10201
- 18.236
0.06146
178.051
1450
0.18567
124.471
5.56625
121.175
0.10211
- 18.888
0.06306
174.258
1500
0.18569
123.602
5.54822
119.257
0.10220
- 19.552
0.06362
170.85
1550
0.18591
122.392
5.52432
117.274
0.10258
- 20.344
0.06362
163.521
1600
0.18645
120.668
5.49674
115.354
0.10272
- 20.962
0.06377
160.673
1650
0.18767
119.047
5.46526
113.429
0.10283
- 21.702
0.06570
158.125
1700
0.18855
117.338
5.43646
111.53
0.10301
- 22.327
0.06858
155.716
1750
0.19030
115.719
5.40925
109.673
0.10315
- 23.09
0.07094
153.133
1800
0.19186
114.043
5.38177
107.795
0.10333
- 23.804
0.07392
151.055
1850
0.19364
112.379
5.35341
105.878
0.10340
- 24.547
0.07711
148.881
1900
0.19581
110.938
5.32341
104.011
0.10356
- 25.192
0.08039
147.016
1950
0.19775
109.449
5.29221
102.117
0.10384
- 25.884
0.08395
145.259
2000
0.20022
108.079
5.25998
100.28
0.10401
- 26.62
0.08764
143.574
2050
0.20274
106.526
5.22900
98.422
0.10405
- 27.296
0.09155
141.882
2100
0.20483
105.054
5.20224
96.556
0.10413
- 28.065
0.09523
140.434
2150
0.20673
103.673
5.16895
94.728
0.10441
- 28.819
0.09969
138.992
2200
0.21006
102.263
5.13639
92.885
0.10441
- 29.517
0.10388
137.594
2250
0.21183
100.83
5.10466
91.074
0.10468
- 30.238
0.10812
136.199
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Table 10. Common Emitter S - Parameters (VCC = 5 Vdc, ICC = 54 mA, TC = 25°C, 50 Ohm System)
(continued)
MMG3010NT1
8
RF Device Data
Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
2300
0.21443
99.385
5.07001
89.25
0.10472
- 30.97
0.11217
134.891
2350
0.21661
98.005
5.03818
87.453
0.10489
- 31.768
0.11632
133.499
2400
0.21882
96.635
5.00516
85.611
0.10502
- 32.469
0.12050
132.176
2450
0.22193
95.395
4.97224
83.821
0.10521
- 33.265
0.12557
130.946
2500
0.22303
93.907
4.93831
82.052
0.10527
- 34.008
0.12957
129.503
2550
0.22524
92.5
4.90747
80.256
0.10541
- 34.706
0.13384
128.151
2600
0.22731
91.106
4.87540
78.504
0.10567
- 35.467
0.13842
126.605
2650
0.22921
89.599
4.84438
76.72
0.10587
- 36.255
0.14269
125.06
2700
0.23072
88.26
4.81170
74.931
0.10582
- 37.021
0.14690
123.585
2750
0.23259
86.873
4.77720
73.147
0.10600
- 37.804
0.15188
122.036
2800
0.23443
85.515
4.74514
71.382
0.10623
- 38.579
0.15645
120.364
2850
0.23625
84.122
4.71210
69.615
0.10637
- 39.349
0.16075
118.48
2900
0.23786
82.84
4.68334
67.904
0.10648
- 40.152
0.16529
116.779
2950
0.23979
81.448
4.64992
66.078
0.10664
- 41.004
0.16969
114.827
3000
0.24125
80.072
4.61988
64.334
0.10700
- 41.819
0.17439
112.861
3050
0.24422
78.711
4.58846
62.607
0.10702
- 42.586
0.17909
111.23
3100
0.24610
77.547
4.55812
60.863
0.10736
- 43.392
0.18404
109.114
3150
0.24792
76.337
4.52495
59.115
0.10733
- 44.248
0.18914
107.101
3200
0.25072
75.174
4.49699
57.356
0.10748
- 45.078
0.19427
105.076
3250
0.25383
73.947
4.46681
55.612
0.10765
- 45.892
0.19983
102.924
3300
0.25590
72.848
4.43561
53.877
0.10784
- 46.753
0.20478
100.877
3350
0.25874
71.738
4.40430
52.133
0.10813
- 47.687
0.21036
98.897
3400
0.26159
70.666
4.37458
50.384
0.10814
- 48.565
0.21586
96.818
3450
0.26531
69.68
4.34458
48.649
0.10821
- 49.382
0.22115
94.763
3500
0.26829
68.707
4.31385
46.916
0.10846
- 50.314
0.22678
92.769
3550
0.27180
67.687
4.28470
45.167
0.10856
- 51.229
0.23264
90.836
3600
0.27525
66.773
4.25389
43.44
0.10871
- 52.108
0.23850
88.858
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Table 10. Common Emitter S - Parameters (VCC = 5 Vdc, ICC = 54 mA, TC = 25°C, 50 Ohm System) (continued)
MMG3010NT1
RF Device Data
Freescale Semiconductor
9
1.7
7.62
0.305 diameter
2.49
3.48
5.33
2.54
1.27
1.27
0.58
0.86
ARCHIVE INFORMATION
3.86
Recommended Solder Stencil
NOTES:
1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE
USED IN PCB LAYOUT DESIGN.
2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS
POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN.
3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN
AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO
THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL
AND RF PERFORMANCE.
4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM
PITCH.
Figure 20. Recommended Mounting Configuration
ARCHIVE INFORMATION
0.64
MMG3010NT1
10
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
ARCHIVE INFORMATION
PACKAGE DIMENSIONS
MMG3010NT1
RF Device Data
Freescale Semiconductor
11
ARCHIVE INFORMATION
ARCHIVE INFORMATION
MMG3010NT1
12
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
ARCHIVE INFORMATION
MMG3010NT1
RF Device Data
Freescale Semiconductor
13
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3100: General Purpose Amplifier Biasing
REVISION HISTORY
The following table summarizes revisions to this document.
Description
3
Mar. 2007
•
Corrected and updated Part Numbers in Tables 8 and 9, Component Designations and Values, to RoHS
compliant part numbers, p. 6, 7
4
July 2007
•
Replaced Case Outline 1514 - 01 with 1514 - 02, Issue D, p. 1, 11 - 13. Case updated to add missing
dimension for Pin 1 and Pin 3.
5
Mar. 2008
• Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings,
p. 1
•
Corrected Fig. 13, Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power y - axis
(ACPR) unit of measure to dBc, p. 5
• Corrected S - Parameter table frequency column label to read “MHz” versus “GHz” and corrected
frequency values from GHz to MHz, p. 8, 9
Aug. 2009
• Data sheet archived. Part no longer manufactured.
ARCHIVE INFORMATION
Date
ARCHIVE INFORMATION
Revision
MMG3010NT1
14
RF Device Data
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MMG3010NT1
Document
Number:
RF
Device
Data MMG3010NT1
Rev. 5, 3/2008
Freescale
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