Freescale Semiconductor
Technical Data
Document Number: MMH3111NT1
Rev. 4.1, 10/2014
Heterostructure Field Effect
Transistor (GaAs HFET)
MMH3111NT1
Broadband High Linearity Amplifier
The MMH3111NT1 is a general purpose amplifier that is internally
input and output prematched. It is designed for a broad range of Class A,
small--signal, high linearity, general purpose applications. It is suitable
for applications with frequencies from 250 to 4000 MHz such as cellular,
PCS, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF.
250--4000 MHz, 12 dB
22.5 dBm
GaAs HFET GPA
Features
Frequency: 250 to 4000 MHz
P1dB: 22.5 dBm @ 900 MHz
Small--Signal Gain: 12 dB @ 900 MHz
Third Order Output Intercept Point: 44 dBm @ 900 MHz
Single 5 V Supply
Internally Prematched to 50 Ohms
Internally Biased
Cost--effective SOT--89 Surface Mount Plastic Package
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
Table 1. Typical Performance (1)
Table 2. Maximum Ratings
Rating
Symbol
900
MHz
2140
MHz
3500
MHz
Unit
Small--Signal Gain
(S21)
Gp
12
11.3
10
dB
Input Return Loss
(S11)
IRL
--14
--15
--16
dB
Output Return Loss
(S22)
ORL
--14
--19
--14
dB
Power Output @1dB
Compression
P1dB
22.5
22
22
dBm
Third Order Output
Intercept Point
OIP3
44
44
42
dBm
Characteristic
SOT--89
Symbol
Value
Unit
Supply Voltage
VDD
6
V
Supply Current
IDD
300
mA
RF Input Power
Pin
20
dBm
Storage Temperature Range
Tstg
--65 to +150
C
Junction Temperature
TJ
150
C
1. VDD = 5 Vdc, TA = 25C, 50 ohm system, application circuit tuned
for specified frequency.
Table 3. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 95C, 5 Vdc, 150 mA, no RF applied
Symbol
Value (2)
Unit
RJC
37.5
C/W
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor, Inc., 2007--2008, 2010--2012, 2014. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMH3111NT1
1
Table 4. Electrical Characteristics (VDD = 5 Vdc, 900 MHz, TA = 25C, 50 ohm system, in Freescale Application Circuit)
Symbol
Min
Typ
Max
Unit
Small--Signal Gain (S21)
Characteristic
Gp
11
12
—
dB
Input Return Loss (S11)
IRL
—
--14
—
dB
Output Return Loss (S22)
ORL
—
--14
—
dB
Power Output @ 1dB Compression
P1dB
—
22.5
—
dBm
Third Order Output Intercept Point
OIP3
—
44
—
dBm
Noise Figure
NF
—
3.2
—
dB
Supply Current
IDD
120
150
190
mA
Supply Voltage
VDD
—
5
—
V
Table 5. Functional Pin Description
2
Pin
Number
Pin Function
1
RFin
2
Ground
3
RFout/DC Supply
1
2
3
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD 22--A114)
1A
Machine Model (per EIA/JESD 22--A115)
A
Charge Device Model (per JESD 22--C101)
IV
Table 7. Moisture Sensitivity Level
Test Methodology
Per JESD 22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
1
260
C
MMH3111NT1
2
RF Device Data
Freescale Semiconductor, Inc.
50 OHM TYPICAL CHARACTERISTICS
0
S11
--10
15
--40C
10
S11, S22 (dB)
Gp, SMALL--SIGNAL GAIN (dB)
20
25C
TC = 85C
S22
--20
--30
VDD = 5 Vdc
VDD = 5 Vdc
5
0
1
2
--40
0
4
3
3
4
Figure 2. Small--Signal Gain (S21) versus
Frequency
Figure 3. Input/Output Loss versus Frequency
VDD = 5 Vdc
900 MHz
12
P1dB, 1 dB COMPRESSION POINT (dBm)
24
1960 MHz
2140 MHz
11
2600 MHz
10
3500 MHz
9
8
10
12
16
14
20
18
22
21
20
19
18
17
VDD = 5 Vdc
1
1.5
2
2.5
3
Pout, OUTPUT POWER (dBm)
f, FREQUENCY (GHz)
Figure 4. Small--Signal Gain versus Output
Power
Figure 5. P1dB versus Frequency
140
120
100
80
60
40
20
0
22
0.5
24
160
0
23
16
1
2
3
4
5
VDD, DRAIN VOLTAGE (V)
Figure 6. Drain Current versus Drain Voltage
6
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
Gp, SMALL--SIGNAL GAIN (dB)
2
f, FREQUENCY (GHz)
13
IDD, DRAIN CURRENT (mA)
1
f, FREQUENCY (GHz)
3.5
50
48
46
44
42
40
VDD = 5 Vdc, 10 dBm per Tone
Two--Tone Measurements, 1 MHz Tone Spacing
38
36
0
1
2
3
4
f, FREQUENCY (GHz)
Figure 7. Third Order Output Intercept Point
versus Frequency
MMH3111NT1
RF Device Data
Freescale Semiconductor, Inc.
3
47
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
50 OHM TYPICAL CHARACTERISTICS
45
43
41
39
37
f = 900 MHz, 10 dBm per tone
Two--Tone Measurements, 1 MHz Tone Spacing
35
4
4.2
4.4
4.8
4.6
5
VDD, DRAIN VOLTAGE (V)
48
VDD = 5 Vdc, f = 900 MHz, 10 dBm per Tone
Two--Tone Measurements, 1 MHz Tone Spacing
47
46
45
44
43
--40
--20
40
60
80
100
Figure 9. Third Order Output Intercept Point
versus Case Temperature
106
--25
VDD = 5 Vdc
f = 900 MHz
1 MHz Tone Spacing
--30
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
20
T, TEMPERATURE (_C)
Figure 8. Third Order Output Intercept Point
versus Drain Voltage
--35
MTTF (YEARS)
--40
--45
--50
105
--55
--60
--65
104
10
12
16
14
120
18
125
130
135
140
150
145
Pout, OUTPUT POWER (dBm)
TJ, JUNCTION TEMPERATURE (C)
Figure 10. Third Order Intermodulation versus
Output Power
Figure 11. MTTF versus Junction Temperature
8
6
4
2
VDD = 5 Vdc
0
1
0
2
3
4
NOTE: The MTTF is calculated with VDD = 5 Vdc, IDD = 150 mA
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
--70
NF, NOISE FIGURE (dB)
0
--30
VDD = 5 Vdc, f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF
--40
--50
--60
--70
9
10
11
12
13
14
15
16
17
18
f, FREQUENCY (GHz)
Pout, OUTPUT POWER (dBm)
Figure 12. Noise Figure versus Frequency
Figure 13. Single--Carrier W--CDMA Adjacent
Channel Power Ratio versus Output Power
19
MMH3111NT1
4
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 800--1900 MHz
VSUPPLY
R1
C3
C4
L1
RF
INPUT
Z1
Z2
Z3
C1
Z1
Z2
Z3
Z4
Z5
C5
Z4
DUT
Z5
Z6
Z7
Z8
C2
VCC
C6
L2
Z6
Z7
Z8
PCB
0.347 x 0.058 Microstrip
0.068 x 0.058 Microstrip
0.418 x 0.058 Microstrip
0.089 x 0.058 Microstrip
0.172 x 0.058 Microstrip
RF
OUTPUT
0.403 x 0.058 Microstrip
0.086 x 0.058 Microstrip
0.261 x 0.058 Microstrip
Getek Grade ML200C, 0.031, r = 4.1
Figure 14. 50 Ohm Test Circuit Schematic
20
S21
S21, S11, S22 (dB)
10
R1
0
C1
S11
--10
--20
L1
C5
S22
C4
C3
C2
C6
L2
--30
--40
600
MMG30XX
Rev 2
VDD = 5 Vdc
800
1000
1200
1400
1600
1800
2000
f, FREQUENCY (MHz)
Figure 15. S21, S11 and S22 versus Frequency
Figure 16. 50 Ohm Test Circuit Component Layout
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
47 pF Chip Capacitors
06035J470BBS
AVX
C3
0.1 F Chip Capacitor
C0603C104J5RAC
Kemet
C4
1 F Chip Capacitor
C0603C105J5RAC
Kemet
C5
0.7 pF Chip Capacitor
06035J0R7BBS
AVX
C6
0.4 pF Chip Capacitor
12105J0R4BBS
AVX
L1
56 nH Chip Inductor
HK160856NJ--T
Taiyo Yuden
L2
12 nH Chip Inductor
HK160812NJ--T
Taiyo Yuden
R1
0 Ω, 1/10 W Chip Resistor
CRCW06030000FKEA
Vishay
MMH3111NT1
RF Device Data
Freescale Semiconductor, Inc.
5
50 OHM APPLICATION CIRCUIT: 1900--2200 MHz
VSUPPLY
R1
C3
C4
L1
RF
INPUT
Z1
Z2
C1
Z1
Z2
Z3
Z4
DUT
Z3
Z4
Z5
C2
VCC
C5
Z5
Z6
Z7
PCB
0.347 x 0.058 Microstrip
0.068 x 0.058 Microstrip
0.507 x 0.058 Microstrip
0.172 x 0.058 Microstrip
Z6
RF
OUTPUT
Z7
C6
0.403 x 0.058 Microstrip
0.086 x 0.058 Microstrip
0.261 x 0.058 Microstrip
Getek Grade ML200C, 0.031, r = 4.1
Figure 17. 50 Ohm Test Circuit Schematic
20
S21
R1
S21, S11, S22 (dB)
10
0
C1
--10
L1
C4
C3
C2
C6
C5
S11
--20
S22
--30
1800
1900
2000
MMG30XX
Rev 2
VDD = 5 Vdc
2100
2200
2300
f, FREQUENCY (MHz)
Figure 18. S21, S11 and S22 versus Frequency
Figure 19. 50 Ohm Test Circuit Component Layout
Table 9. 50 Ohm Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
0.01 F Chip Capacitors
06035J470BBS
AVX
C3
0.1 F Chip Capacitor
C0603C104J5RAC
Kemet
C4
1 F Chip Capacitor
C0603C105J5RAC
Kemet
C5
0.7 pF Chip Capacitor
06035J0R7BBS
AVX
C6
0.4 pF Chip Capacitor
12105J0R4BBS
AVX
L1
56 nH Chip Inductor
HK160856NJ--T
Taiyo Yuden
R1
0 Ω, 1/10 W Chip Resistor
CRCW06030000FKEA
Vishay
MMH3111NT1
6
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 2500--3800 MHz
VSUPPLY
R1
C3
C4
L1
RF
INPUT
Z1
Z2
Z3
C1
Z1
Z2
Z3
Z4
DUT
Z4
VCC
C5
Z6
Z7
C2
C6
Z5
Z6
Z7
PCB
0.347 x 0.058 Microstrip
0.489 x 0.058 Microstrip
0.086 x 0.058 Microstrip
0.097 x 0.058 Microstrip
Z5
RF
OUTPUT
0.075 x 0.058 Microstrip
0.403 x 0.058 Microstrip
0.347 x 0.058 Microstrip
Getek Grade ML200C, 0.031, r = 4.1
Figure 20. 50 Ohm Test Circuit Schematic
20
S21
10
R1
S21, S11, S22 (dB)
0
S11
--10
C1
--20
L1
C5
C4
C3
C2
C6
--30
S22
--40
--50
2400
MMG30XX
Rev 2
VDD = 5 Vdc
2700
3000
3300
3600
3900
f, FREQUENCY (MHz)
Figure 21. S21, S11 and S22 versus Frequency
Figure 22. 50 Ohm Test Circuit Component Layout
Table 10. 50 Ohm Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
2 pF Chip Capacitors
06035J2R0BBS
AVX
C3
0.1 F Chip Capacitor
C0603C104J5RAC
Kemet
C4
1 F Chip Capacitor
C0603C105J5RAC
Kemet
C5
0.8 pF Chip Capacitor
06035J0R8BBS
AVX
C6
0.4 pF Chip Capacitor
06035J0R4BBS
AVX
L1
56 nH Chip Inductor
HK160856NJ--T
Taiyo Yuden
R1
0 Ω, 1/10 W Chip Resistor
CRCW06030000FKEA
Vishay
MMH3111NT1
RF Device Data
Freescale Semiconductor, Inc.
7
50 OHM TYPICAL CHARACTERISTICS
Table 11. Common Source S--Parameters (VDD = 5 Vdc, TA = 25C, 50 Ohm System)
S21
S12
S22
|S11|
|S21|
|S12|
|S22|
100
0.329
--36.383
4.365
165.300
0.116
4.544
0.161
--47.926
150
0.324
--37.554
4.337
163.880
0.116
3.571
0.154
--47.482
250
0.322
--38.791
4.313
162.387
0.116
2.612
0.147
--46.993
300
0.318
--40.072
4.288
160.990
0.116
1.903
0.143
--46.565
350
0.315
--41.580
4.266
159.673
0.116
1.012
0.137
--46.090
400
0.313
--43.457
4.239
158.172
0.116
0.371
0.133
--45.522
450
0.313
--45.793
4.217
156.531
0.116
--1.047
0.130
--45.093
500
0.315
--48.163
4.196
154.804
0.116
--2.355
0.129
--44.795
550
0.317
--50.730
4.175
153.014
0.117
--3.521
0.129
--45.225
600
0.319
--53.308
4.154
151.195
0.117
--4.643
0.129
--45.763
650
0.322
--55.918
4.136
149.346
0.117
--5.686
0.129
--46.206
700
0.325
--58.706
4.116
147.439
0.117
--6.700
0.129
--46.966
750
0.329
--61.512
4.098
145.565
0.117
--7.693
0.130
--47.749
800
0.332
--64.233
4.078
143.660
0.117
--8.616
0.131
--48.671
850
0.336
--67.096
4.059
141.719
0.117
--9.581
0.132
--49.880
900
0.339
--69.960
4.040
139.799
0.117
--10.489
0.132
--51.046
950
0.344
--72.823
4.019
137.852
0.117
--11.398
0.133
--52.269
1000
0.347
--75.724
4.001
135.896
0.117
--12.312
0.133
--53.492
1050
0.351
--78.553
3.983
133.947
0.118
--13.198
0.133
--54.989
1100
0.355
--81.424
3.964
131.996
0.118
--14.093
0.132
--56.508
1150
0.358
--84.459
3.944
130.038
0.118
--14.998
0.131
--57.950
1200
0.362
--87.372
3.924
128.069
0.118
--15.903
0.131
--59.716
1250
0.367
--90.300
3.903
126.129
0.118
--16.821
0.129
--61.319
1300
0.371
--93.201
3.883
124.163
0.118
--17.713
0.128
--63.068
1350
0.375
--96.015
3.861
122.219
0.118
--18.623
0.126
--64.878
1400
0.380
--98.765
3.837
120.287
0.118
--19.497
0.124
--66.432
1450
0.385
--101.218
3.815
118.370
0.118
--20.349
0.123
--67.493
1500
0.391
--103.291
3.793
116.530
0.118
--21.202
0.123
--68.218
1550
0.395
--105.591
3.773
114.664
0.119
--22.024
0.123
--69.287
1600
0.398
--108.116
3.752
112.769
0.119
--22.896
0.122
--70.746
1650
0.401
--110.631
3.731
110.886
0.119
--23.793
0.121
--72.539
1700
0.404
--113.324
3.710
108.972
0.119
--24.719
0.120
--74.765
1750
0.407
--116.074
3.691
107.070
0.119
--25.638
0.118
--77.175
1800
0.410
--118.856
3.672
105.143
0.119
--26.594
0.117
--79.613
1850
0.413
--121.692
3.654
103.215
0.119
--27.518
0.115
--82.165
1900
0.416
--124.469
3.633
101.291
0.119
--28.483
0.113
--84.722
1950
0.419
--127.201
3.613
99.367
0.120
--29.461
0.111
--87.462
2000
0.422
--130.044
3.592
97.431
0.120
--30.414
0.110
--90.359
2050
0.425
--132.901
3.570
95.510
0.120
--31.362
0.108
--93.223
2100
0.428
--135.666
3.547
93.588
0.120
--32.353
0.106
--96.005
2150
0.432
--138.396
3.525
91.656
0.120
--33.317
0.104
--99.124
2160
0.433
--138.893
3.519
91.287
0.120
--33.518
0.104
--99.644
2170
0.434
--139.420
3.515
90.904
0.120
--33.707
0.103
--100.212
2180
0.434
--139.934
3.509
90.532
0.120
--33.908
0.103
--100.854
2190
0.435
--140.473
3.506
90.142
0.120
--34.094
0.103
--101.491
MMH3111NT1
8
S11
f
MHz
(continued)
RF Device Data
Freescale Semiconductor, Inc.
50 OHM TYPICAL CHARACTERISTICS
Table 11. Common Source S--Parameters (VDD = 5 Vdc, TA = 25C, 50 Ohm System) (continued)
S11
S21
S12
S22
f
MHz
|S11|
|S21|
|S12|
|S22|
2200
0.436
--141.015
3.502
89.764
0.120
--34.293
0.102
--102.102
2250
0.440
--143.664
3.480
87.853
0.120
--35.279
0.100
--105.319
2300
0.444
--146.130
3.456
85.964
0.120
--36.278
0.099
--108.673
2350
0.448
--148.573
3.433
84.098
0.120
--37.227
0.097
--111.868
2400
0.452
--150.891
3.408
82.262
0.120
--38.193
0.094
--115.093
2450
0.457
--153.231
3.384
80.399
0.120
--39.165
0.093
--118.343
2500
0.461
--155.588
3.360
78.562
0.120
--40.131
0.091
--121.666
2550
0.465
--157.929
3.337
76.708
0.120
--41.119
0.090
--125.028
2600
0.469
--160.182
3.312
74.886
0.120
--42.109
0.089
--128.277
2650
0.473
--162.557
3.290
73.042
0.120
--43.087
0.088
--131.582
2700
0.476
--164.863
3.268
71.221
0.120
--44.100
0.088
--134.657
2750
0.480
--167.206
3.246
69.393
0.120
--45.119
0.087
--137.722
2800
0.483
--169.520
3.223
67.572
0.120
--46.143
0.087
--140.631
2850
0.487
--171.820
3.201
65.747
0.120
--47.132
0.086
--143.444
2900
0.490
--173.992
3.180
63.945
0.120
--48.134
0.086
--146.347
2950
0.494
--176.195
3.157
62.155
0.120
--49.132
0.085
--149.433
3000
0.498
--178.278
3.136
60.357
0.120
--50.131
0.085
--152.745
3050
0.501
179.789
3.114
58.599
0.120
--51.092
0.085
--156.274
3100
0.505
177.950
3.092
56.836
0.120
--52.074
0.084
--160.030
3150
0.508
176.155
3.071
55.112
0.120
--53.076
0.085
--163.912
3200
0.511
174.401
3.051
53.377
0.120
--54.062
0.085
--167.662
3250
0.514
172.667
3.031
51.656
0.120
--55.020
0.085
--171.336
3300
0.517
170.842
3.010
49.907
0.120
--55.996
0.086
--175.010
3350
0.519
169.000
2.990
48.184
0.120
--56.970
0.087
--178.505
3400
0.522
167.181
2.970
46.458
0.120
--57.975
0.087
177.850
3450
0.524
165.308
2.950
44.716
0.120
--59.010
0.089
174.447
3500
0.527
163.438
2.930
43.003
0.120
--60.024
0.090
170.925
3550
0.528
161.590
2.911
41.291
0.120
--61.051
0.093
167.846
3600
0.531
159.691
2.892
39.560
0.120
--62.060
0.095
164.966
MMH3111NT1
RF Device Data
Freescale Semiconductor, Inc.
9
1.90
3.00
2X
45
4.35
2X
1.25
3X
0.70
0.85
2X
1.50
Figure 23. PCB Pad Layout for SOT--89A
M3111N
YYWW
Figure 24. Product Marking
MMH3111NT1
10
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
MMH3111NT1
RF Device Data
Freescale Semiconductor, Inc.
11
MMH3111NT1
12
RF Device Data
Freescale Semiconductor, Inc.
MMH3111NT1
RF Device Data
Freescale Semiconductor, Inc.
13
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3100: General Purpose Amplifier and MMIC Biasing
Software
.s2p File
Development Tools
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to
Software & Tools on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Nov. 2007
Initial Release of Data Sheet
1
Apr. 2008
Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings,
p. 1
Corrected Fig. 13, Single--Carrier W--CDMA Adjacent Channel Power Ratio versus Output Power y--axis
(ACPR) unit of measure to dBc, p. 5
Updated Part Numbers in Tables 8, 9, 10, Component Designations and Values, to latest RoHS compliant
part numbers, pp. 6, 7, 8
2
Apr. 2010
Changed Maximum Ratings table value for RF input power from 10 to 20 dBm as a result of
improvements made in the measurement method and the capability of the device, p. 1
Added .s2p File availability to Product Software, p. 15
3
Jan. 2011
Corrected temperature at which ThetaJC is measured from 25C to 95C and added “no RF applied” to
Thermal Characteristics table to indicate that thermal characterization is performed under DC test with no
RF signal applied, p. 1
Removed IDD bias callout from applicable graphs as bias is not a controlled value, pp. 4--8
Removed IDD bias callout from Table 11, Common Source S--Parameters heading as bias is not a
controlled value, pp. 9--10
Added Printed Circuit Boards availability to Development Tools, p. 15
4
Sept. 2012
Replaced the PCB Pad Layout drawing, the package isometric and mechanical outline for Case 1514--02
(SOT--89) with Case 2142--01 (SOT--89) as a result of the device transfer from a Freescale wafer fab to an
external GaAs wafer fab and new assembly site. The new assembly and test site’s SOT--89 package has
slight dimensional differences, pp. 1, 11--14. Refer to PCN13337, GaAs Fab Transfer.
Table 6, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production. ESD
ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive
devices, p. 3
Added Fig. 24, Product Marking, p. 11
Added AN3100, General Purpose Amplifier and MMIC Biasing to Product Documentation, Application
Notes, p. 15
4.1
Oct. 2014
Revised Fig. 24, Product Marking, p. 10
MMH3111NT1
14
RF Device Data
Freescale Semiconductor, Inc.
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Document
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Data MMH3111NT1
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