MML09231HT1

Freescale Semiconductor Technical Data Document Number: MML09231H Rev. 1, 9/2014 Enhancement Mode pHEMT Technology (E--pHEMT) MML09231HT1 Low Noise Amplifier The MML09231H is a single--stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed for a range of low noise, high linearity applications such as small cell, tower mounted amplifiers (TMA) and receiver front--end circuits. It operates from a single voltage supply and is suitable for applications with frequencies from 700 to 1400 MHz such as ISM, GSM, W--CDMA and LTE. 700--1400 MHz, 17.2 dB 24.5 dBm, 0.36 dB NF E--pHEMT LNA Features  Ultra Low Noise Figure: 0.36 dB @ 900 MHz  Frequency: 700--1400 MHz  Unconditionally Stable Over Temperature  High Reverse Isolation: --21 dB @ 900 MHz  P1dB: 24.5 dBm @ 900 MHz  Small--Signal Gain: 17.2 dB @ 900 MHz (adjustable externally)  Third Order Output Intercept Point: 37.4 dBm @ 900 MHz  Single 5 V Supply  Power--down Pin  Supply Current: 55 mA  50 Ohm Operation (some external matching required)  Cost--effective 8--pin, 2 mm DFN Surface Mount Plastic Package  In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. Table 1. Typical Performance (1) Characteristic Symbol 700 MHz Table 2. Maximum Ratings 900 MHz 1400 MHz 0.46(b) 0.36(b) 0.45(b) Rating Unit Noise Figure (2a) NF Input Return Loss (S11) IRL --17 --15 --14 dB Output Return Loss (S22) ORL --14 --15 --15 dB Small--Signal Gain (S21) Gp 19 17.2 13.2 dB P1dB 24 24.5 24 dBm Third Order Input Intercept Point IIP3 17 20.2 23.8 dBm Third Order Output Intercept Point OIP3 36 37.4 37 dBm Power Output @ 1dB Compression DFN 2  2 dB Symbol Value Unit Supply Voltage VDD 6 V Supply Current IDD 150 mA RF Input Power Pin 20 dBm Storage Temperature Range Tstg --65 to +150 C Junction Temperature TJ 175 C 1. VDD = 5 Vdc, TA = 25C, 50 ohm system, application circuit tuned for specified frequency. 2. (a) Noise figure value calculated with connector losses removed. (b) Zin = 50 . Table 3. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 95C, 5 Vdc, 55 mA, no RF applied Symbol Value (3) Unit RJC 77 C/W 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. This document contains information on a preproduction product. Specifications and information herein are subject to change without notice.  Freescale Semiconductor, Inc., 2013--2014. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MML09231HT1 1 Table 4. Electrical Characteristics (VDD = 5 Vdc, 900 MHz, TA = 25C, 50 ohm system, in Freescale Application Circuit) Symbol Min Typ Max Unit Small--Signal Gain (S21) Gp 15.8 17.2 — dB Input Return Loss (S11) IRL — --15 — dB Output Return Loss (S22) ORL — --15 — dB Power Output @ 1dB Compression P1dB — 24.5 — dBm IIP3 — 20.2 — dBm Third Order Output Intercept Point OIP3 — 37.4 — dBm Reverse Isolation (S12) |S12| — --21 — dB Noise Figure (1) NF — 0.36 — dB Supply Current (2) IDD 40 55 70 mA Supply Voltage VDD — 5 — V IPD — 1.1 — mA VPD 2.2 0 — — VDD 0.5 V Characteristic Third Order Input Intercept Point Supply Current in Power Down Mode Logic Voltage for Power Down Input High Voltage Input Low Voltage (3) 1. Noise figure value calculated with connector losses removed. 2. DC current measured with no RF signal applied. 3. Limits derived from device characterization. Table 5. Functional Pin Description Pin Number Pin Function 1 VBIAS 2 RFin 3 No Connection 4 No Connection 5 No Connection 6 No Connection 7 RFout/Supply Voltage 8 Power Down (active high) VBIAS 1 RFin 2 N.C. 3 N.C. 4 GND 8 Power Down 7 RFout/VDD 6 N.C. 5 N.C. (Top View) Note: Exposed backside of the package is DC and RF ground. Figure 1. Pin Connections Table 6. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD 22--A114) 1B, passes 700 V Machine Model (per EIA/JESD 22--A115) A Charge Device Model (per JESD 22--C101) IV Table 7. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 1 260 C MML09231HT1 2 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 900 MHz VDD R2 C6 POWER DOWN R1 C5 C4 C3 1 BIAS CIRCUIT 8 L2 L1 RF INPUT RF OUTPUT 7 2 C2 C1 3 N.C. N.C. 6 4 N.C. N.C. 5 Figure 2. MML09231H Test Circuit Schematic Table 8. MML09231H Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 100 pF Chip Capacitor GRM1555C1H101JA01 Murata C2 180 pF Chip Capacitor GRM1555C1H181JA01 Murata C3 27 pF Chip Capacitor GRM1555C1H270JA01 Murata C4 220 pF Chip Capacitor GRM1555C1H221JA01 Murata C5, C6 1000 pF Chip Capacitors GRM1885C1H102JA01 Murata L1 20 nH Chip Inductor 0402HP-20NXGLW Coilcraft L2 47 nH Chip Inductor 0402HP-47NXGLW Coilcraft R1 4.7 k 1/10 W Chip Resistor CR21-472J-B Kyocera R2 0 , 1 A Chip Resistor CR0402-J/-000GLFCT Bourns PCB 0.02, r = 3.50 RO4350B Rogers MML09231HT1 RF Device Data Freescale Semiconductor, Inc. 3 50 OHM APPLICATION CIRCUIT: 900 MHz VDD POWER DOWN R2 C6 DFN 2x2--8N Rev. 0 R1 C5 C4 C3 C1 L2 L1 C2 RFIN RFOUT NOTE: To achieve optimal noise performance, it is critical that proper biasing, input matching, supply decoupling and grounding are employed. Figure 3. MML09231H Test Circuit Component Layout Table 8. MML09231H Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 100 pF Chip Capacitor GRM1555C1H101JA01 Murata C2 180 pF Chip Capacitor GRM1555C1H181JA01 Murata C3 27 pF Chip Capacitor GRM1555C1H270JA01 Murata C4 220 pF Chip Capacitor GRM1555C1H221JA01 Murata C5, C6 1000 pF Chip Capacitors GRM1885C1H102JA01 Murata L1 20 nH Chip Inductor 0402HP-20NXGLW Coilcraft L2 47 nH Chip Inductor 0402HP-47NXGLW Coilcraft R1 4.7 k 1/10 W Chip Resistor CR21-472J-B Kyocera R2 0 , 1 A Chip Resistor CR0402-J/-000GLFCT Bourns PCB 0.02, r = 3.50 RO4350B Rogers (Test Circuit Component Designations and Values repeated for reference.) MML09231HT1 4 RF Device Data Freescale Semiconductor, Inc. 0 --12 35 --4 30 --14 --8 --16 25 --12 --16 S12 (dB) S11 (dB) 50 OHM TYPICAL CHARACTERISTICS: 900 MHz 85C --40C --20 --20 15 85C --22 10 25C --40C --24 5 --24 --28 700 --18 20 VDD = 5 Vdc 840 980 1120 1260 --26 0 700 1400 840 f, FREQUENCY (MHz) --12 22 --14 20 --16 18 --18 S22 (dB) S21 (dB) 1120 25C 16 --40C 85C 25C 85C --40C --20 --24 VDD = 5 Vdc 840 980 1120 1400 --22 12 700 1260 Figure 5. S12 versus Frequency versus Temperature 24 10 980 f, FREQUENCY (MHz) Figure 4. S11 versus Frequency versus Temperature 14 VDD = 5 Vdc 25C 1260 1400 --26 700 VDD = 5 Vdc 840 980 1120 1260 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 6. S21 versus Frequency versus Temperature Figure 7. S22 versus Frequency versus Temperature 1400 MML09231HT1 RF Device Data Freescale Semiconductor, Inc. 5 1.5 NF, NOISE FIGURE (dB) 1.3 VDD = 5 Vdc 1.1 0.9 0.7 85C 25C 0.5 0.3 0.1 700 --40C 840 980 1120 1260 1400 f, FREQUENCY (MHz) P1dB, 1 dB COMPRESSION POINT, CW (dBm) Figure 8. Noise Figure versus Frequency versus Temperature OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 50 OHM TYPICAL CHARACTERISTICS: 900 MHz 42 40 --40C 38 36 85C 25C 34 32 30 28 700 VDD = 5 Vdc 1 MHz Tone Spacing 840 980 1120 1260 1400 f, FREQUENCY (MHz) Figure 9. Third Order Output Intercept Point (Two--Tone) versus Frequency versus Temperature 28 27 26 --40C 25 85C 24 25C 23 22 VDD = 5 Vdc 21 700 840 980 1120 1260 1400 f, FREQUENCY (MHz) Figure 10. P1dB versus Frequency versus Temperature, CW MML09231HT1 6 RF Device Data Freescale Semiconductor, Inc. 2.00 0.80 0.30 0.50 1.6  0.8 solder pad with thermal via structure. All dimensions in mm. 1.20 0.60 2.40 Figure 11. PCB Pad Layout for DFN 2  2 MC YW Figure 12. Product Marking MML09231HT1 RF Device Data Freescale Semiconductor, Inc. 7 PACKAGE DIMENSIONS MML09231HT1 8 RF Device Data Freescale Semiconductor, Inc. MML09231HT1 RF Device Data Freescale Semiconductor, Inc. 9 MML09231HT1 10 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes  AN1955: Thermal Measurement Methodology of RF Power Amplifiers Software  .s2p File Development Tools  Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to Software & Tools on the part’s Product Summary page to download the respective tool. FAILURE ANALYSIS At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third party vendors with moderate success. For updates contact your local Freescale Sales Office. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 May 2013  Initial Release of Data Sheet 1 Sept. 2014  Table 2, Maximum Ratings: updated Junction Temperature from 150C to 175C to reflect recent test results of the device, p. 1 MML09231HT1 RF Device Data Freescale Semiconductor, Inc. 11 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2013--2014 Freescale Semiconductor, Inc. MML09231HT1 Document Number: MML09231H Rev. 1, 9/2014 12 RF Device Data Freescale Semiconductor, Inc.