Freescale Semiconductor
Technical Data
Document Number: MMRF1014N
Rev. 0, 7/2014
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
MMRF1014NT1
Designed for Class A or Class AB power amplifier applications with
frequencies up to 2000 MHz. Suitable for analog and digital modulation and
multicarrier amplifier applications.
Typical Two--Tone Performance @ 1960 MHz, 28 Vdc, IDQ = 50 mA,
Pout = 4 W PEP
Power Gain — 18 dB
Drain Efficiency — 33%
IMD — --34 dBc
Typical Two--Tone Performance @ 900 MHz, 28 Vdc, IDQ = 50 mA,
Pout = 4 W PEP
Power Gain — 19 dB
Drain Efficiency — 33%
IMD — --39 dBc
Capable of Handling 5:1 VSWR @ 28 Vdc, 1960 MHz, 4 W CW Output Power
Features
1--2000 MHz, 4 W, 28 V
CLASS A/AB
RF POWER MOSFET
Characterized with Series Equivalent Large--Signal Impedance Parameters
PLD--1.5
PLASTIC
On--Chip RF Feedback for Broadband Stability
Integrated ESD Protection
In Tape and Reel. T1 Suffix = 1,000 Units,16 mm Tape Width, 7--inch Reel.
Drain
Gate
Note: The center pad on the backside of
the package is the source terminal
for the transistor.
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +68
Vdc
Gate--Source Voltage
VGS
--0.5, +12
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
C
Operating Junction Temperature
TJ
150
C
Symbol
Value (1,2)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 76C, 4 W PEP, Two--Tone
Case Temperature 79C, 4 W CW
RJC
C/W
8.8
8.5
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Class
1C
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor, Inc., 2014. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMRF1014NT1
1
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
500
nAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 50 mAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 50 mAdc)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage (1)
(VDD = 28 Vdc, ID = 50 mAdc, Measured in Functional Test)
VGG(Q)
2.2
3
4.2
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 50 mAdc)
VDS(on)
—
0.27
0.37
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
21
—
pF
Output Capacitance
(VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
25
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz)
Ciss
—
30
—
pF
Characteristic
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 50 mA, Pout = 4 W PEP, f1 = 1960 MHz,
f2 = 1960.1 MHz, Two--Tone Test
Power Gain
Drain Efficiency
Gps
16.5
18
20
dB
D
28
33
—
%
Intermodulation Distortion
IMD
—
--34
--28
dBc
Input Return Loss
IRL
—
--12
--10
dB
Typical Performance (In Freescale 900 MHz Demo Board, 50 ohm system) VDD = 28 Vdc, IDQ = 50 mA, Pout = 4 W PEP,
f = 900 MHz, Two--Tone Test, 100 kHz Tone Spacing
Power Gain
Gps
—
19
—
dB
Drain Efficiency
D
—
33
—
%
Intermodulation Distortion
IMD
—
--39
—
dBc
Input Return Loss
IRL
—
--12
—
dB
11/
1. VGG = 10 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board.
Refer to Test Circuit Schematic.
MMRF1014NT1
2
RF Device Data
Freescale Semiconductor, Inc.
R1
VBIAS
VSUPPLY
+
R2
C8
C1
Z5
C7
C3
C4
C5
Z10
RF
INPUT
R3
Z1
Z2
Z3
Z6
Z8
Z4
C2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z9
RF
OUTPUT
C6
DUT
0.054 x 0.430 Microstrip
0.054 x 0.137 Microstrip
0.580 x 0.420 Microstrip
0.580 x 0.100 Microstrip
0.025 x 0.680 Microstrip
0.210 x 0.100 Microstrip
Z7
Z8
Z9
Z10
PCB
0.210 x 1.220 Microstrip
0.054 x 0.680 Microstrip
0.054 x 0.260 Microstrip
0.025 x 0.930 Microstrip
Arlon CuClad 250GX--0300--55--22, 0.020, r = 2.5
Figure 2. MMRF1014NT1 Test Circuit Schematic
Table 6. MMRF1014NT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
100 nF Chip Capacitor
CDR33BX104AKYS
Kemet
C2, C3, C6, C7
9.1 pF Chip Capacitors
ATC100B9R1CT500XT
ATC
C4, C5
10 F, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
C8
10 F, 35 V Tantalum Chip Capacitor
T490D106K035AT
Kemet
R1
1 k, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
R2
10 k, 1/4 W Chip Resistor
CRCW12061002FKEA
Vishay
R3
10 , 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
MMRF1014NT1
RF Device Data
Freescale Semiconductor, Inc.
3
25
C8
C2
R1
R2
C1
C7
C3
R3
C4
C5
C6
Figure 3. MMRF1014NT1 Test Circuit Component Layout
MMRF1014NT1
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
18
Gps, POWER GAIN (dB)
33
D
17.8
32
31
Gps
17.6
30
VDD = 28 Vdc, Pout = 2 W (Avg.)
IDQ = 50 mA, 100 kHz Tone Spacing
17.4
17.2
IRL
17
--30
--8
--31
--12
--32
--33
16.8
16.6
IM3
16.4
1930
1940
1950
1960
1970
1980
--16
--20
--34
--24
--35
1990
--28
IRL, INPUT RETURN LOSS (dB)
18.2
D, DRAIN
EFFICIENCY (%)
34
IM3 (dBc)
18.4
f, FREQUENCY (MHz)
Figure 4. Two--Tone Wideband Performance
@ Pout = 2 Watts Avg.
18
17
62.5 mA
50 mA
37.5 mA
16
25 mA
VDD = 28 Vdc
f1 = 1960 MHz, f2 = 1960.1 MHz
Two--Tone Measurements
15
IMD, INTERMODULATION DISTORTION (dBc)
14
0.01
10
1
0.1
--10
--30
--40
--60
5th Order
--70
7th Order
--80
20
0.1
0.01
10
1
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two--Tone Power Gain versus
Output Power
Figure 6. Intermodulation Distortion Products
versus Output Power
47
VDD = 28 Vdc, Pout = 2 W (Avg.), IDQ = 50 mA
(f1 + f2)/2 = Center Frequency of 1960 MHz
--35
3rd Order
--45
5th Order
--50
--55
41
P1dB = 37.61 dBm (5.768 W)
39
Actual
37
33
10
Ideal
P3dB = 38.22 dBm (6.637 W)
43
VDD = 28 Vdc, IDQ = 50 mA
Pulsed CW, 8 sec(on), 1 msec(off)
f = 1960 MHz
35
7th Order
1
P6dB = 38.73 dBm (7.465 W)
45
--40
--60
0.1
3rd Order
--50
--25
--30
VDD = 28 Vdc, IDQ = 50 mA
f1 = 1960 MHz, f2 = 1960.1 MHz
Two--Tone Measurements
--20
Pout, OUTPUT POWER (dBm)
Gps, POWER GAIN (dB)
19
IDQ = 75 mA
IMD, INTERMODULATION DISTORTION (dBc)
20
100
14
16
18
20
22
24
26
TWO--TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulsed CW Output Power versus
Input Power
MMRF1014NT1
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
40
--20
VDD = 28 Vdc, IDQ = 50 mA
f = 1960 MHz, N--CDMA IS--95 (Pilot, Sync,
Paging, Traffic Codes 8 Through 13)
--30
30
--40
Gps
20
--50
ACPR
10
ACPR (dB)
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
50
--60
D
0
--70
0.1
0.01
1
10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. Single--Carrier CDMA ACPR, Power Gain
and Drain Efficiency versus Output Power
20
60
Gps, POWER GAIN (dB)
Gps
50
25_C
18
85_C
85_C
17
16
15
40
30
VDD = 28 Vdc
IDQ = 50 mA
f = 1960 MHz
20
D
10
14
0.01
D DRAIN EFFICIENCY (%)
TC = --30_C
19
--30_C
0
0.1
1
10
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
IDQ = 50 mA
f = 1960 MHz
18
17.5
S21 (dB)
Gps, POWER GAIN (dB)
18.5
17
16.5
16
0
20
--5
VDD = 24 V
0
1
2
3
4
5
32 V
28 V
6
7
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
8
S21
18
--10
--15
16
14
15.5
15
22
12
1800
VDD = 28 Vdc
Pout = 2 W CW
IDQ = 50 mA
1850
--20
S11
1900
1950
S11 (dB)
19
2000
2050
--25
2100
f, FREQUENCY (MHz)
Figure 12. Broadband Frequency Response
MMRF1014NT1
6
RF Device Data
Freescale Semiconductor, Inc.
f = 1990 MHz
Zload
Zo = 10
f = 1930 MHz
f = 1990 MHz
Zsource
f = 1930 MHz
VDD = 28 Vdc, IDQ = 50 mA, Pout = 4 W PEP
f
MHz
Zsource
Zload
1930
1.96 -- j5.34
8.78 + j6.96
1960
1.89 -- j5.10
8.93 + j7.46
1990
1.82 -- j4.85
9.11 + j7.97
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 13. Series Equivalent Source and Load Impedance
MMRF1014NT1
RF Device Data
Freescale Semiconductor, Inc.
7
Table 7. Common Source S--Parameters (VDD = 28 Vdc, IDQ = 50 mA, TA = 25C, 50 Ohm System)
f
MHz
S11
S21
S12
S22
|S11|
|S21|
|S12|
|S22|
500
0.649
--116.340
7.902
105.420
0.056
--73.750
0.548
--33.570
550
0.695
--121.680
7.502
98.790
0.053
--80.570
0.593
--41.480
600
0.733
--126.560
7.111
92.380
0.049
--87.010
0.632
--48.890
650
0.770
--131.340
6.699
86.290
0.045
--93.280
0.669
--56.000
700
0.800
--135.740
6.302
80.450
0.041
--99.120
0.701
--62.810
750
0.827
--140.030
5.922
74.850
0.038
--104.850
0.727
--69.290
800
0.848
--143.950
5.552
69.630
0.035
--110.110
0.750
--75.350
850
0.866
--147.690
5.220
64.580
0.032
--115.220
0.770
--81.130
900
0.882
--151.140
4.891
59.970
0.029
--119.960
0.786
--86.570
950
0.895
--154.560
4.597
55.490
0.026
--124.790
0.800
--91.730
1000
0.907
--157.590
4.315
51.240
0.024
--129.090
0.813
--96.660
1050
0.916
--160.540
4.060
47.170
0.022
--133.370
0.824
--101.340
1100
0.923
--163.310
3.819
43.340
0.020
--137.460
0.833
--105.790
1150
0.929
--165.930
3.601
39.650
0.018
--141.440
0.840
--110.050
1200
0.935
--168.430
3.398
36.110
0.017
--145.330
0.847
--114.170
1250
0.938
--170.770
3.210
32.740
0.015
--149.540
0.851
--118.060
1300
0.942
--173.030
3.036
29.490
0.014
--153.430
0.856
--121.880
1350
0.945
--175.140
2.875
26.360
0.013
--157.460
0.859
--125.520
1400
0.948
--177.170
2.728
23.330
0.012
--161.910
0.863
--129.020
1450
0.951
--179.090
2.590
20.440
0.011
--166.180
0.866
--132.390
1500
0.953
179.030
2.464
17.640
0.010
--170.630
0.869
--135.650
1550
0.954
177.270
2.347
14.920
0.009
--174.890
0.872
--138.760
1600
0.955
175.570
2.240
12.320
0.008
179.950
0.875
--141.750
1650
0.956
173.980
2.139
9.740
0.008
173.920
0.877
--144.650
1700
0.957
172.350
2.047
7.250
0.007
167.710
0.880
--147.480
1750
0.957
170.800
1.958
4.810
0.007
161.810
0.882
--150.180
1800
0.958
169.340
1.879
2.440
0.006
155.370
0.884
--152.760
1850
0.959
167.920
1.806
0.260
0.006
148.940
0.886
--155.230
1900
0.959
166.510
1.736
--1.980
0.005
142.630
0.887
--157.580
1950
0.960
165.200
1.668
--4.310
0.005
136.740
0.888
--160.050
2000
0.959
163.800
1.611
--6.240
0.005
129.910
0.890
--162.070
2050
0.959
162.420
1.555
--8.290
0.005
123.810
0.891
--164.190
2100
0.958
161.170
1.504
--10.270
0.005
118.200
0.892
--166.140
2150
0.958
159.840
1.456
--12.210
0.005
112.740
0.893
--168.060
2200
0.957
158.560
1.412
--14.130
0.005
108.460
0.894
--169.840
2250
0.957
157.160
1.372
--16.010
0.005
103.840
0.896
--171.610
2300
0.955
155.870
1.334
--17.870
0.005
99.310
0.896
--173.260
2350
0.954
154.510
1.300
--19.700
0.005
95.360
0.897
--174.830
2400
0.953
153.120
1.268
--21.510
0.005
91.030
0.898
--176.390
2450
0.953
151.730
1.238
--23.250
0.005
87.460
0.899
--177.840
(continued)
MMRF1014NT1
8
RF Device Data
Freescale Semiconductor, Inc.
Table 7. Common Source S--Parameters (VDD = 28 Vdc, IDQ = 50 mA, TA = 25C, 50 Ohm System) (continued)
f
MHz
S11
S21
S12
S22
|S11|
|S21|
|S12|
|S22|
2500
0.952
150.340
1.211
--25.120
0.006
84.160
0.899
--179.270
2550
0.950
149.010
1.187
--26.920
0.006
80.780
0.897
179.420
2600
0.949
147.380
1.166
--28.650
0.006
77.880
0.897
178.120
2650
0.948
145.920
1.144
--30.420
0.007
74.670
0.898
176.840
2700
0.944
144.200
1.121
--32.310
0.007
71.360
0.896
175.480
2750
0.944
142.790
1.105
--34.230
0.007
67.980
0.897
174.060
2800
0.943
141.020
1.088
--36.000
0.007
63.950
0.897
172.930
2850
0.941
139.410
1.073
--37.870
0.007
61.230
0.896
171.630
2900
0.940
137.640
1.058
--39.760
0.008
59.810
0.896
170.330
2950
0.938
135.900
1.045
--41.680
0.008
58.280
0.896
169.040
3000
0.937
133.860
1.032
--43.610
0.008
56.740
0.895
167.510
MMRF1014NT1
RF Device Data
Freescale Semiconductor, Inc.
9
0.146
3.71
0.095
2.41
0.115
2.92
0.115
2.92
0.020
0.51
inches
mm
Figure 14. Solder Footprint for PLD--1.5
M1014
N( )QQ
YYWW
Figure 15. Product Marking
MMRF1014NT1
10
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
MMRF1014NT1
RF Device Data
Freescale Semiconductor, Inc.
11
MMRF1014NT1
12
RF Device Data
Freescale Semiconductor, Inc.
MMRF1014NT1
RF Device Data
Freescale Semiconductor, Inc.
13
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software
& Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
July 2014
Description
Initial Release of Data Sheet
MMRF1014NT1
14
RF Device Data
Freescale Semiconductor, Inc.
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E 2014 Freescale Semiconductor, Inc.
MMRF1014NT1
Document
Number: MMRF1014N
RF Device
Data
Rev. 0,Freescale
7/2014
Semiconductor,
Inc.
15
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