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MMRF2005GNR1

MMRF2005GNR1

  • 厂商:

    NXP(恩智浦)

  • 封装:

  • 描述:

    SINGLE W-CDMA RF LDMOS WIDEBAND

  • 数据手册
  • 价格&库存
MMRF2005GNR1 数据手册
Freescale Semiconductor Technical Data Document Number: MMRF2005N Rev. 0, 8/2015 RF LDMOS Wideband Integrated Power Amplifiers MMRF2005N MMRF2005GN The MMRF2005N wideband integrated circuit is designed with on--chip matching that makes it usable from 728 to 960 MHz. This multi--stage structure is rated for 24 to 32 V operation and is ideal for applications including radio communications, data links and UHF radar. Driver Application — 900 MHz  Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ1 = 106 mA, IDQ2 = 285 mA, Pout = 3.2 W Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency (1) Gps (dB) PAE (%) ACPR (dBc) 920 MHz 36.6 16.1 –48.0 940 MHz 36.8 16.7 –48.7 960 MHz 36.6 17.3 –48.6 728–960 MHz, 3.2 W AVG., 28 V RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS TO--270WB--16 PLASTIC MMRF2005N  Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 48 W CW Output Power (3 dB Input Overdrive from Rated Pout) Driver Application — 700 MHz  Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ1 = 106 mA, IDQ2 = 285 mA, Pout = 3.2 W Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) PAE (%) ACPR (dBc) 728 MHz 36.4 16.1 –47.7 748 MHz 36.4 16.1 –47.8 768 MHz 36.4 16.0 –47.9 TO--270WBG--16 PLASTIC MMRF2005GN Features  Characterized with series equivalent large--signal impedance parameters and common source S--parameters  On--chip matching (50 ohm input, DC blocked, > 5 ohm output)  Integrated quiescent current temperature compensation with enable/disable function (2)  Integrated ESD protection VDS1 RFin VGS1 VGS2 RFout/VDS2 Quiescent Current Temperature Compensation (2) GND NC NC VDS1 GND 1 2 3 4 5 16 15 GND NC RFin 6 14 RFout/VDS2 GND VGS1 VGS2 NC GND 7 8 9 10 11 13 12 NC GND (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. 900 MHz Driver Frequency Band table data collected in the 900 MHz application circuit. See Fig. 9. 2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf and search for AN1977 or AN1987.  Freescale Semiconductor, Inc., 2015. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MMRF2005N MMRF2005GN 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS –0.5, +65 Vdc Gate--Source Voltage VGS –6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg –65 to +150 C Case Operating Temperature Range TC –40 to +150 C Operating Junction Temperature Range (1,2) TJ –40 to +225 C Input Power Pin 20 dBm Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 3.2 W CW, 940 MHz Stage 1, 28 Vdc, IDQ1 = 106 mA Stage 2, 28 Vdc, IDQ2 = 285 mA Case Temperature 80C, 30 W CW, 940 MHz Stage 1, 28 Vdc, IDQ1 = 40 mA Stage 2, 28 Vdc, IDQ2 = 340 mA RJC C/W 5.5 1.6 5.8 1.2 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1B, passes 500 V Machine Model (per EIA/JESD22--A115) A, passes 100 V Charge Device Model (per JESD22--C101) II, passes 200 V Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 14 Adc) VGS(th) 1.2 2 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1 = 106 mA) VGS(Q) — 2.8 — Vdc Fixture Gate Quiescent Voltage (4) (VDD = 28 Vdc, IDQ1 = 106 mA, Measured in Functional Test) VGG(Q) 6.9 9.4 11.9 Vdc Characteristic Stage 1 — Off Characteristics Stage 1 — On Characteristics 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf/calculators. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955. 4. VGG = 3.3  VGS(Q). Parameter measured on Freescale test fixture, due to resistor divider network on the board. Refer to test circuit schematic. (continued) MMRF2005N MMRF2005GN 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 74 Adc) VGS(th) 1.2 2 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2 = 285 mA) VGS(Q) — 2.6 — Vdc Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, IDQ2 = 285 mA, Measured in Functional Test) VGG(Q) 4.2 5.9 7.6 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 740 mA) VDS(on) 0.1 0.3 0.8 Vdc Stage 2 — Off Characteristics Stage 2 — On Characteristics Functional Tests (2,3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 106 mA, IDQ2 = 285 mA, Pout = 3.2 W Avg., f = 940 MHz, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carrier, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Gps 33 35.9 38 dB Power Added Efficiency PAE 14 16.5 — % ACPR — –49.5 –46 dBc IRL — –18.7 –9 dB Adjacent Channel Power Ratio Input Return Loss Typical Performance — 900 MHz (In Freescale 900 MHz Application Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 106 mA, IDQ2 = 285 mA, 920–960 MHz Bandwidth VDD = 28 Vdc, IDQ1 = 40 mA, IDQ2 = 340 mA Pout @ 1 dB Compression Point, CW P1dB — 31 — — 45 — VBWres — 80 — MHz IQT — 0.02 — % Gain Flatness in 40 MHz Bandwidth @ Pout = 3.2 W Avg. GF — 0.2 — dB Gain Variation over Temperature (–30C to +85C) G — 0.036 — dB/C P1dB — 0.01 — dBm/C IMD Symmetry @ 25 W PEP, Pout where IMD Third Order IMDsym Intermodulation  30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Quiescent Current Accuracy over Temperature (4) with 3 k Gate Feed Resistors (–30 to 85C) Output Power Variation over Temperature (–30C to +85C) W MHz Table 6. Ordering Information Device MMRF2005NR1 MMRF2005GNR1 Tape and Reel Information R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel Package TO--270WB--16 TO--270WBG--16 1. VGG = 2.25  VGS(Q). Parameter measured on Freescale test fixture, due to resistor divider network on the board. Refer to test circuit schematic. 2. Part internally matched both on input and output. 3. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. 4. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf and search for AN1977 or AN1987. MMRF2005N MMRF2005GN RF Device Data Freescale Semiconductor, Inc. 3 VDD1 C14 C15 R7 C13 C18 C9 C6 R4 R5 C5 C4 R6 C2 VGG1 C16 C8 C7 C1 CUT OUT AREA C17 VDD2 C11 C12 C10 C3 VGG2 R1 R2 R3 Figure 3. MMRF2005N Test Circuit Component Layout — 900 MHz Table 7. MMRF2005N Test Circuit Component Designations and Values — 900 MHz Part Description Part Number Manufacturer C1, C4, C7 47 pF Chip Capacitors ATC600F470JT250XT ATC C2, C5, C8 10 nF, 50 V Chip Capacitors C0603C103J5RAC--TU Kemet C3, C6 1 F, 50 V Chip Capacitors GRM21BR71H105KA12L Murata C9, C15 10 F, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C10 16 pF Chip Capacitor ATC100B160JT500XT ATC C11 6.2 pF Chip Capacitor ATC100B6R2BT500XT ATC C12 7.5 pF Chip Capacitor ATC100B7R5CT500XT ATC C13, C14 47 pF Chip Capacitors ATC100B470JT500XT ATC C16, C17 100 F, 50 V Electrolytic Capacitors MCGPR35V337M10X16--RH Multicomp C18 0.5 pF Chip Capacitor ATC100B0R5BT500XT ATC R1, R2, R3, R4, R5, R6 1000 , 1/4 W Chip Resistors CRCW12061K00FKEA Vishay R7 0 , 3A Chip Resistor CRCW12060000Z0EA Vishay PCB 0.020, r = 3.5 RF--35 Taconic MMRF2005N MMRF2005GN 4 RF Device Data Freescale Semiconductor, Inc. 37 16 14 Gps 36.5 12 36 PARC 35.5 35 3.84 MHz Channel Bandwidth 34.5 Input Signal PAR = 7.5 dB @ 0.01% 34 Probability on CCDF 33.5 800 825 850 875 ACPR 925 950 –18 –42 –20 –44 IRL 900 –40 975 –46 –48 –22 –24 –26 –50 1000 –28 0.5 0 –0.5 –1 –1.5 PARC (dB) Gps, POWER GAIN (dB) 18 PAE IRL, INPUT RETURN LOSS (dB) 20 VDD = 28 Vdc, Pout = 3.2 W (Avg.), IDQ1 = 106 mA 38 I DQ2 = 285 mA, Single--Carrier W--CDMA 37.5 ACPR (dBc) 38.5 PAE, POWER ADDED EFFICIENCY (%) TYPICAL CHARACTERISTICS — 900 MHz –2 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 4. Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 3.2 Watts Avg. –10 VDD = 28 Vdc, Pout = 25 W (PEP), IDQ1 = 106 mA IDQ2 = 285 mA, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 940 MHz –20 IM3--U –30 IM3--L –40 IM5--U IM5--L –50 IM7--L IM7--U –60 1 10 100 TWO--TONE SPACING (MHz) 37 0 36.5 36 35.5 35 34.5 40 –1 dB = 6.41 W PARC –1 34 VDD = 28 Vdc IDQ1 = 106 mA IDQ2 = 285 mA f = 940 MHz –2 –2 dB = 8.98 W 28 –3 dB = 12.17 W –3 22 –5 Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF PAE –4 ACPR 2 –26 46 Gps 5 8 11 16 10 –30 –34 –38 ACPR (dBc) 1 PAE, POWER ADDED EFFICIENCY (%) 37.5 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) Figure 5. Intermodulation Distortion Products versus Two--Tone Spacing –42 –46 –50 14 Pout, OUTPUT POWER (WATTS) Figure 6. Output Peak--to--Average Ratio Compression (PARC) versus Output Power MMRF2005N MMRF2005GN RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS — 900 MHz 0 40 –5 30 –10 25 –15 VDD = 28 Vdc Pin = –10 dBm IDQ1 = 106 mA IDQ2 = 285 mA 20 15 10 450 550 650 IRL (dB) GAIN (dB) Gain 35 –20 IRL –25 750 850 950 1050 1150 –30 1250 f, FREQUENCY (MHz) Figure 7. Broadband Frequency Response Table 8. Series Equivalent Input and Load Impedance — 900 MHz Zin f MHz Zin  Zload  820 37.95 + j2.31 4.70 + j0.98 840 39.95 + j2.72 4.29 + j1.23 860 42.70 + j1.02 3.93 + j1.67 880 44.40 – j1.38 3.63 + j2.15 900 46.25 – j4.92 3.41 + j2.61 920 45.70 – j8.41 3.14 + j3.05 940 45.46 – j11.47 2.94 + j3.48 960 45.07 – j15.19 2.85 + j3.90 980 43.49 – j18.03 2.69 + j4.32 = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Z in Z load MMRF2005N MMRF2005GN 6 RF Device Data Freescale Semiconductor, Inc. LOAD PULL CHARACTERISTICS — 900 MHz Table 9. Load Pull Performance VDD = 28 Vdc, IDQ1 = 106 mA, IDQ2 = 285 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle P1dB P3dB f (MHz) Watts dBm Watts dBm 920 43 46.3 51 47.1 940 42 46.3 50 47 960 42 46.3 50 47 NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level f (MHz) Zsource  Zload  920 P1dB 55.82 + j15.71 4.54 + j1.15 940 P1dB 52.56 + j20.20 4.38 + j1.21 960 P1dB 49.18 + j25.00 5.04 + j1.15 MMRF2005N MMRF2005GN RF Device Data Freescale Semiconductor, Inc. 7 900 MHz APPLICATION CIRCUIT Table 10. 900 MHz Performance (In Freescale Application Circuit, 50 ohm system) VDD = 28 Vdc, IDQ1 = 106 mA, IDQ2 = 285 mA, Pout = 3.2 W Avg., Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF Frequency (MHz) Gps (dB) PAE (%) ACPR (dBc) 920 36.6 16.1 –48.0 940 36.8 16.7 –48.7 960 36.6 17.3 –48.6 960 MHz 960 MHz 940 MHz Gps, POWER GAIN (dB) 37 920 MHz 36.5 VDD = 28 Vdc I = 106 mA, I = 285 mA DQ2 36 DQ1 Single--Carrier W--CDMA, 3.84 MHz 35.5 Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% 35 Probability on CCDF 34.5 PAE 34 33.5 1 0 54 –5 48 920 MHz 960 MHz 940 MHz 42 36 30 920 MHz 24 18 12 6 ACPR 33 60 10 50 0 –10 –15 –20 –25 –30 ACPR (dBc) Gps 37.5 PAE, POWER ADDED EFFICIENCY (%) 38 –35 –40 –45 –50 Pout, OUTPUT POWER (WATTS) AVG. Figure 8. Single--Carrier W--CDMA Power Gain, Power Added Efficiency and ACPR versus Output Power MMRF2005N MMRF2005GN 8 RF Device Data Freescale Semiconductor, Inc. VDD1 C14 C15 R7 C13 R5 C5 C4 R6 VGG1 C16 C8 C7 C6 C18 R4 C9 CUT OUT AREA C17 VDD2 C2 C10 C11 C12 C1 C3 VGG2 R1 R2 R3 Figure 9. MMRF2005N Test Circuit Component Layout — 700 MHz Table 11. MMRF2005N Test Circuit Component Designations and Values — 700 MHz Part Description Part Number Manufacturer C1, C4, C7 47 pF Chip Capacitors ATC600F470JT250XT ATC C2, C5, C8 10 nF, 50 V Chip Capacitors C0603C103J5RAC Kemet C3, C6 1 F, 50 V Chip Capacitors GRM21BR71H105KA12L Murata C9, C15 10 F, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C10 13 pF Chip Capacitor ATC100B130JT500XT ATC C11 7.5 pF Chip Capacitor ATC100B7R5CT500XT ATC C12 6.8 pF Chip Capacitor ATC100B6R8CT500XT ATC C13, C14 47 pF Chip Capacitors ATC100B470JT500XT ATC C16, C17 100 F, 50 V Electrolytic Capacitors MCGPR35V337M10X16--RH Multicomp C18 1.8 pF Chip Capacitor ATC100B1R8BT500XT ATC R1, R2, R3, R4, R5, R6 1000 , 1/4 W Chip Resistors CRCW12061K00FKEA Vishay R7 0 , 3A Chip Resistor CRCW12060000Z0EA Vishay PCB 0.020, r = 3.5 RF--35 Taconic MMRF2005N MMRF2005GN RF Device Data Freescale Semiconductor, Inc. 9 TYPICAL CHARACTERISTICS — 700 MHz 37 36.5 Gps, POWER GAIN (dB) 748 MHz Gps 33 32.5 ACPR 0 54 –5 48 728 MHz 36 V = 28 Vdc DD 35.5 IDQ1 = 106 mA, IDQ2 = 285 mA Single--Carrier W--CDMA, 3.84 MHz 35 Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% 34.5 Probability on CCDF 34 728 MHz PAE 33.5 60 42 36 30 748 MHz 18 12 768 MHz 6 728 MHz 748 MHz 10 1 24 0 50 –10 –15 –20 –25 –30 ACPR (dBc) 768 MHz PAE, POWER ADDED EFFICIENCY (%) 37.5 –35 –40 –45 –50 Pout, OUTPUT POWER (WATTS) AVG. Figure 10. Single--Carrier W--CDMA Power Gain, Power Added Efficiency and ACPR versus Output Power — 700 MHz Table 12. Series Equivalent Input and Load Impedance — 700 MHz f MHz Zin  Zload  710 25.21 – j1.21 8.57 + j2.52 720 33.76 + j5.36 8.52 + j2.46 730 38.78 + j1.40 8.44 + j2.34 740 40.14 – j0.76 8.36 + j2.16 750 35.46 – j1.15 8.30 + j2.00 760 34.65 – j0.53 8.32 + j1.90 770 34.75 – j0.43 8.31 + j1.86 780 36.20 + j0.81 8.27 + j1.98 36.18 + j1.33 8.23 + j2.12 790 Zin = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Z in Z load MMRF2005N MMRF2005GN 10 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS MMRF2005N MMRF2005GN RF Device Data Freescale Semiconductor, Inc. 11 MMRF2005N MMRF2005GN 12 RF Device Data Freescale Semiconductor, Inc. MMRF2005N MMRF2005GN RF Device Data Freescale Semiconductor, Inc. 13 MMRF2005N MMRF2005GN 14 RF Device Data Freescale Semiconductor, Inc. MMRF2005N MMRF2005GN RF Device Data Freescale Semiconductor, Inc. 15 MMRF2005N MMRF2005GN 16 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following resources to aid your design process. Application Notes AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages      Engineering Bulletins  EB212: Using Data Sheet Impedances for RF LDMOS Devices Software  Electromigration MTTF Calculator To Download Resources Specific to a Given Part Number: 1. 2. 3. 4. Go to http://www.freescale.com/rf Search by part number Click part number link Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Aug. 2015 Description  Initial Release of Data Sheet MMRF2005N MMRF2005GN RF Device Data Freescale Semiconductor, Inc. 17 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2015 Freescale Semiconductor, Inc. MMRF2005N MMRF2005GN 18 Document Number: MMRF2005N Rev. 0, 8/2015 RF Device Data Freescale Semiconductor, Inc.
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