MMRF2007NR1

RF Aerospace and Defense Solutions Worldwide leader in RF power—the best choice for defense applications Featuring New High Power GaN and LDMOS Devices NXP RF Aerospace and Defense Solutions Worldwide Industry Leader NXP’s RF power transistor products enable the majority of the world’s cellular voice and data traffic every day, in the harshest environments on earth, making NXP the world’s largest and most deployed supplier of RF power technology. RF Solutions for Aerospace and Defense NXP Advantages NXP offers diverse technologies such as industry-leading LDMOS, GaN and GaAs on SiC to provide the best technological solution for each customer application. }} More than 20 years of RF industry leadership with the largest, most experienced RF engineering team in the world Dedicated Aerospace and Defense Products Team }} NXP owned and operated high-volume manufacturing This team draws on NXP’s wealth of RF technology, design and applications experience to offer optimum RF solutions for defense applications such as radar, communications and electronic warfare. }} U.S.-based company with U.S. LDMOS fab 2 }} Dedicated, specialized RF packaging R&D team that has produced the industry’s highest performance packaging solutions NXP RF Aerospace and Defense Solutions Benefits of Choosing NXP RF Power for Your Defense Electronics Needs }} Broad line of COTS products repurposed and enabled for optimum performance in aerospace and defense systems, including radar, communications and electronic warfare }} Dedicated team of experts in aerospace and defense systems, applications, marketing and program management who support aerospace and defense customer applications }} Broadest line of RF technologies and products, including LDMOS, GaN and GaAs }} Domestic source of LDMOS and GaN technology }} Security of supply with product longevity guarantee of 10 or 15 years }} ITAR-compliant applications support and secure technical data handling NXP RF Power Technology Advantages }} Highest RF ruggedness in the industry with > 65:1 sustained VSWR }} Highest gain and efficiency with LDMOS technology }} Widest bandwidth performance }} Broadest lines of packages, including high thermal efficiency over-molded plastic packages and low thermal resistance air cavity ceramic packages GaN: A New Industry-Leading Product Line NXP’s new best-in-class GaN products offer superior broadband performance, thermal efficiency, innovative packaging, and CW and long pulse performance that defense customers have been asking for. Contact your dedicated NXP RF aerospace and defense team to request samples or early access to new products. NXP, the Worldwide Leader in RF Power—the Best Choice for Defense Applications Questions? A new defense program challenge? A SWaP problem to solve? Contact NXP’s dedicated RF aerospace and defense team at RFMIL@nxp.com for the best support and to enable your innovative solutions. www.nxp.com 3 NXP RF Aerospace and Defense Solutions NXP RF Aerospace and Defense Solutions RF Aerospace and Defense Power LDMOS Transistors: General Purpose, Radar and Communications General Purpose Driver ICs Frequency Band MHz Product Pout (Typ) Watts VDD Volts Gain (Typ)/Freq dB/MHz Eff (Typ) % 0JC °C/W Packaging MMRF2005NR1 I/O 728–960 3.2 AVG 28 35.9/940 16.5 1.6 TO-270WB-16 MMRF2005GNR1 I/O 728–960 3.2 AVG 28 35.9/940 16.5 1.6 TO-270WBG-16 I 1805–2170 20 AVG 28 32.6/2140 50 1.9 PQFN 8 × 8 MMRF2004NBR1 I/O 2500–2700 25 AVG 28 28.5/2700 36 1.4 TO-272WB-16 MMRF2007NR1 I/O 136–940 35 AVG 28 32.6/940 42.1 0.6 TO-270WBL-16 MMRF2007GNR1 I/O 136–940 35 AVG 28 32.6/940 42.1 0.6 TO-270WBLG-16 Pout (Typ) Watts VDD Volts Gain (Typ)/Freq dB/MHz Eff (Typ) % 0JC °C/W Packaging PLD-1.5 MMRF2006NT1 General Purpose Driver Transistors Frequency Band MHz Product 28 Volt LDMOS MMRF1014NT1 U 1–2000 4 AVG 28 18/1960 43 8.8 MMRF1015NR1 U 450–1500 10 AVG 28 18/960 40 2.85 TO-270-2 MMRF1015GNR1 U 450–1500 10 AVG 28 18/960 40 2.85 TO-270G-2 MMRF1004NR1 I 2110–2170 10 PEP 28 15.5/2170 36 2.3 TO-270-2 TO-270G-2 MMRF1004GNR1 I 2110–2170 10 PEP 28 15.5/2170 36 2.3 MMRF1315NR1 I/O 500–1000 60 CW 28 20.0/960 63 0.77 TO-270-2 MMRF1017NR3 I/O 720–960 80 AVG 28 20.0/960 36.1 0.31 OM-780-2L MMRF1012NR1 U 10–450 10 CW 50 23.9/220 62 3 TO-270-2 MMRF1304LR5 U To 2000 25 CW 50 26/512 75 1.4 NI-360-2 MMRF1304NR1 U To 2000 25 CW 50 25.5/512 74.7 1.2 TO-270-2 MMRF1304GNR1 U To 2000 25 CW 50 25.5/512 74.7 1.2 TO-270G-2 MMRF1305HR5 U To 2000 100 CW 50 27.2/512 70 0.38 NI-780H-4L 50 Volt LDMOS 4 NXP RF Aerospace and Defense Solutions General Purpose Driver Transistors (continued) Frequency Band MHz Product Pout (Typ) Watts VDD Volts Gain (Typ)/Freq dB/MHz Eff (Typ) % 0JC °C/W Packaging 50 Volt LDMOS MMRF1305HSR5 U To 2000 100 CW 50 27.2/512 70 0.38 NI-780S-4L MMRF1316NR1 I/O 1.8–600 300 CW 50 25/230 70 0.22 TO-270WB-4 MMRF1318NR1 U 10–600 300 CW 50 22/450 60 0.24 TO-270WB-4 Pout (Typ) Watts VDD Volts Gain (Typ)/Freq dB/MHz Eff (Typ) % 0JC °C/W Packaging Radar Frequency Band MHz Product HF, VHF and UHF Radar MMRF1012NR1 U 10–450 10 CW 50 23.9/220 62 3 TO-270-2 MMRF1304LR5 U To 2000 25 CW 50 26/512 75 1.4 NI-360-2 MMRF1304NR1 U To 2000 25 CW 50 25.5/512 74.7 1.2 TO-270-2 MMRF1304GNR1 U To 2000 25 CW 50 25.5/512 74.7 1.2 TO-270G-2 MMRF1315NR1 I/O 500–1000 60 CW 28 20.0/960 63 0.77 TO-270-2 MMRF1305HR5 U To 2000 100 CW 50 27.2/512 70 0.38 NI-780H-4L MMRF1305HSR5 U To 2000 100 CW 50 27.2/512 70 0.38 NI-780S-4L MMRF1020-04NR3 I 720–960 100 AVG 48 19.5/920 48.5 0.45 OM-780-4L MMRF1020-04GNR3 I 720–960 100 AVG 48 19.5/920 48.5 0.45 OM-780G-4L MMRF1310HR5 U To 600 300 CW 50 25.0/300 80 0.19 NI-780H-4L MMRF1310HSR5 U To 600 300 CW 50 25.0/300 80 0.19 NI-780S-4L MMRF1316NR1 I/O 1.8–600 300 CW 50 25/230 70 0.22 TO-270WB-4 MMRF1318NR1 U 10–600 300 CW 50 22/450 60 0.24 TO-270WB-4 MMRF1016HR5 U To 500 600 Peak 50 25/225 59 0.2 NI-1230H-4S MMRF1308HR5 U To 600 600 CW 50 24.6/230 75.2 0.12 NI-1230H-4S MMRF1308HSR5 U To 600 600 CW 50 24.6/230 75.2 0.12 NI-1230S-4S MMRF1311H I 470–860 140 AVG 50 20/810 34 0.16 NI-1230H-4S MMRF1006HR5 U 10–500 1000 Peak 50 20/450 64 0.03 NI-1230H-4S MMRF1006HSR5 U 10–500 1000 Peak 50 20/450 64 0.03 NI-1230S-4S MMRF1306HR5 U 1.8–600 1250 CW 50 22.9/230 74.6 0.15 NI-1230H-4S MMRF1306HSR5 U 1.8–600 1250 CW 50 22.9/230 74.6 0.15 NI-1230S-4S VHF Radar Lineup Example VHF Radar Lineup Example 2 mW (3 dBm) 126 mW (21 dBm) +18 dB Pre-Driver: MMG3014N 2 kW (63 dBm) 25 W (44 dBm) +23 dB Driver: 2 x MMRF1304N +19 dB Final Stage: 4 x MMRF1308H/HS Key Parameters  Frequency: 2–600 MHz narrowband  Unmatched for narrow or wideband operation  Rugged > 65:1 VSWR 50 V LDMOS  Integrated ESD protection www.nxp.com 5 NXP RF Aerospace and Defense Solutions RF Aerospace and Defense Power LDMOS Transistors: General Purpose, Radar and Communications Radar (continued) Frequency Band MHz Product Pout (Typ) Watts VDD Volts Gain (Typ)/Freq dB/MHz Eff (Typ) % 0JC °C/W Packaging L-Band Radar MMRF1019NR4 I/O 960–1400 10 Peak 50 25/1090 69 1.6 PLD-1.5 MMRF1304LR5 U To 2000 25 CW 50 26/512 75 1.4 NI-360-2 MMRF1304NR1 U To 2000 25 CW 50 25.5/512 74.7 1.2 TO-270-2 MMRF1304GNR1 U To 2000 25 CW 50 25.5/512 74.7 1.2 TO-270G-2 MMRF1305HR5 U To 2000 100 CW 50 27.2/512 70 0.38 NI-780H-4L MMRF1305HSR5 U To 2000 100 CW 50 27.2/512 70 0.38 NI-780S-4L MMRF1005HR5 I 1300 250 Peak 50 22.7/1300 57 0.07 NI-780H-2L MMRF1005HSR5 I 1300 250 Peak 50 22.7/1300 57 0.07 NI-780S-2L MMRF2010NR1 I 1030–1090 250 Peak 50 32.5/1030 59.1 0.15 TO-270WB-14 MMRF2010GNR1 I 1030–1090 250 Peak 50 32.5/1030 59.1 0.15 TO-270WBG-14 MMRF1008HR5 I/O 960–1215 275 Peak 50 20.3/1030 65.5 0.08 NI-780H-2L MMRF1008HSR5 I/O 960–1215 275 Peak 50 20.3/1030 65.5 0.08 NI-780S-2L MMRF1011HR5 I/O 1400 330 Peak 50 18/1400 60.5 0.13 NI-780H-2L MMRF1011HSR5 I/O 1400 330 Peak 50 18/1400 60.5 0.13 NI-780S-2L MMRF1009HR5 I/O 960–1215 500 Peak 50 19.7/1030 62 0.044 NI-780H-2L MMRF1009HSR5 I/O 960–1215 500 Peak 50 19.7/1030 62 0.044 NI-780S-2L MMRF1007HR5 I 965–1215 1000 Peak 50 20/1030 56 0.02 NI-1230H-4S MMRF1007HSR5 I 965–1215 1000 Peak 50 20/1030 56 0.02 NI-1230S-4S NI-1230H-4S MMRF1314HR5 I/O 1200–1400 1000 Peak 52 15.52 46.5 0.018 MMRF1314HSR5 I/O 1200–1400 1000 Peak 52 15.52 46.5 0.018 NI-1230S-4S MMRF1314GSR5 I/O 1200–1400 1000 Peak 52 15.52 46.5 0.018 NI-1230GS-4L MMRF1312HR5 I/O 900–1215 1200 Peak1 52 17.33 54 0.017 NI-1230H-4S Peak1 52 17.33 54 0.017 NI-1230S-4S MMRF1312HSR5 I/O 900–1215 1200 MMRF1312GSR5 I/O 900–1215 1200 Peak1 52 17.33 54 0.017 NI-1230GS-4L MMRF1317HR5 I/O 1030–1090 1500 Peak1 50 18.9/1030 56 0.019 NI-1230H-4S I/O 1030–1090 Peak1 50 18.9/1030 56 0.019 NI-1230S-4S MMRF1317HSR5 1500 S-Band Radar MMRF5300N* I 2700–3500 60 Peak 50 17/3500 61.5 - OM-270-2 MMRF1013HR5 I/O 2700–2900 320 Peak 30 13.3/2900 50.5 0.06 NI-1230H-4S MMRF1013HSR5 I/O 2700–2900 320 Peak 30 13.3/2900 50.5 0.06 NI-1230S-4S * Preliminary, 1 Pout @ P3dB, 2 1200-1400 MHz, 3 960-1215 MHz Transponder/Secondary Radar Lineup Example Transponder/Secondary Radar Lineup Example 10 mW (10 dBm) 630 mW (28 dBm) 1300 W (61 dBm) 25 W (44 dBm) Key Parameters  Frequency: 1030–1090 MHz  High Power: 1300 W P1dB +18 dB Pre-driver: MMG3006N 6 +16 dB Driver: MMRF1304N +17 dB Final Stage: MMRF1317H  Pulse: Rise and fall time must be short, controlled and equal. Reduced droop of pulse amplitude. NXP RF Aerospace and Defense Solutions Radio Communications Frequency Band MHz Product Pout (Typ) Watts VDD Volts Gain (Typ)/Freq dB/MHz Eff (Typ) % 0JC °C/W Packaging 28 Volt GaN MMRF5011N* I 1–3000 12 CW 28 13/2500 40 - OM-270-8 MMRF5013N* I 1–3000 12 CW 50 15/2700 60 - OM-780-8 MMRF5019N* I 1-3000 25 CW 50 18/2500 40 - OM-270-8 MMRF5023N* I 1-2700 63 CW 50 16/2500 40 - OM-270-2 MMRF5014HR5 I 1–2700 125 CW 50 16/2500 64.2 0.86 NI-360H-2SB MMRF5015NR5 I 1–2700 125 CW 50 16/2500 64.2 0.66 OM-270-2 U 136–941 7 CW 7.5 15.2/870 71 1.1 PLD-1.5W MMRF1024HSR5 I/O 2496–2690 50 AVG 28 14.1 @ 2496 44.6 0.42 NI-1230S-4L2L MMRF1022HSR5 I/O 2110–2170 63 AVG 28 16.2/2140 51.8 0.33 NI-1230S-4L2L MMRF1023HSR5 I/O 2300–2400 66 AVG 28 14.9 @ 2300 46.7 0.25 NI-1230S-4L2L MMRF1315NR1 I/O 500–1000 60 CW 28 20.0/960 63 0.77 TO-270-2 23.9/220 62 3 TO-270-2 50 Volt GaN 7.5 Volt LDMOS MMRF1021NT1 28 Volt LDMOS 50 Volt LDMOS—1–600 MHz MMRF1012NR1 U 10–450 10 CW 50 MMRF1304LR5 U To 2000 25 CW 50 26/512 75 1.4 NI-360-2 MMRF1304NR1 U To 2000 25 CW 50 25.5/512 74.7 1.2 TO-270-2 MMRF1304GNR1 U To 2000 25 CW 50 25.5/512 74.7 1.2 TO-270G-2 MMRF1305HR5 U To 2000 100 CW 50 27.2/512 70 0.38 NI-780H-4L MMRF1305HSR5 U To 2000 100 CW 50 27.2/512 70 0.38 NI-780S-4L MMRF1320NR1 U 1.8–600 150 CW 50 26.1/230 70.3 0.21 TO-270WB-4 MMRF1316NR1 I/O 1.8–600 300 CW 50 25.0/230 70 0.22 TO-270WB-4 MMRF1310HR5 U To 600 300 CW 50 25.0/300 80 0.19 NI-780H-4L MMRF1318NR1 U 10–600 300 CW 50 22/450 60 0.24 TO-270WB-4 MMRF1310HSR5 U To 600 300 CW 50 25.0/300 80 0.19 NI-780S-4L MMRF1016HR5 U To 500 600 Peak 50 25/225 59 0.2 NI-1230H-4S MMRF1308HR5 U To 600 600 CW 50 24.6/230 75.2 0.12 NI-1230H-4S MMRF1308HSR5 U To 600 600 CW 50 24.6/230 75.2 0.12 NI-1230S-4S MMRF1306HR5 U 1.8–600 1250 CW 50 22.9/230 74.6 0.15 NI-1230H-4S MMRF1306HSR5 U 1.8–600 1250 CW 50 22.9/230 74.6 0.15 NI-1230S-4S Radio Communications Lineup Example * Preliminary Radio Communications Lineup Example 400 mW (26 dBm) 6.3 W (38 dBm) +12 dB Driver: MMRF5013N 100 W (50 dBm) +12 dB Final Stage: MMRF5015N Key Parameters  Frequency: Up to 2500 MHz wideband  Power: 100 W CW across multi-octave bandwidth, 200 to 2500 MHz  Thermal Resistance: The OM-270-2 plastic package enables improved thermal resistance. www.nxp.com 7 NXP RF Aerospace and Defense Solutions RF Aerospace and Defense Power LDMOS Transistors: General Purpose, Radar and Communications Radio Communications (continued) Frequency Band MHz Product Pout (Typ) Watts VDD Volts Gain (Typ)/Freq dB/MHz Eff (Typ) % 0JC °C/W Packaging 50 Volt LDMOS—450–2000 MHz 8 MMRF1304LR5 U To 2000 25 CW 50 26/512 75 1.4 NI-360-2 MMRF1304NR1 U To 2000 25 CW 50 25.5/512 74.7 1.2 TO-270-2 MMRF1304GNR1 U To 2000 25 CW 50 25.5/512 74.7 1.2 TO-270G-2 MMRF1018NR1 I 470–860 90 CW 50 22.0/860 57 0.79 TO-270WB-4 MMRF1018NBR1 I 470–860 90 CW 50 22.0/860 57 0.79 TO-272WB-4 MMRF1305HR5 U To 2000 100 CW 50 27.2/512 70 0.38 NI-780H-4L MMRF1305HSR5 U To 2000 100 CW 50 27.2/512 70 0.38 NI-780S-4L MMRF1020-04NR3 I 720–960 100 AVG 48 19.5/920 48.5 0.45 OM-780-4L MMRF1020-04GNR3 I 720–960 100 AVG 48 19.5/920 48.5 0.45 OM-780G-4L NXP RF Aerospace and Defense Solutions RF Aerospace and Defense Power Portfolio RF Power Military Portfolio Power MMRF1317H 1 kW Legend MMRF1312H MMRF1306H 50 V GaN MMRF1007H MMRF1314H MMRF1006H 28 V GaN 52 V LDMOS 50 V Rugged LDMOS MMRF1308H 50 V LDMOS MMRF1009H 500 W 28 or 32 V LDMOS 7.5 or 12.5 V LDMOS MMRF1318N MMRF1316N MMRF1017N MMRF1310H 250 W MMRF1008H MMRF2010N MMRF1005H MMRF1305H MMRF1018N MMRF1315N MMRF2007N MMRF1304L/N MMRF1012N MMRF1015N MMRF1021N MMRF1014N 1 MHz MMRF1013H MMRF1023HS MMRF1024HS MMRF5014H MMRF5015N MMRF1311H MMRF1020-04N MMRF1320N 100 W MMRF1022HS MMRF1011H 2 MHz 500 MHz Industry-Leading Packaging MMRF1019N MMRF2006N MMRF1004N MMRF5023N MMRF5300N MMRF5019N MMRF2004NB MMRF5013N MMRF5011N MMRF2005N 1 GHz 2 GHz 3 GHz Frequency RF Aerospace and Defense Power Packages   Thermal performance leadership   Package design   NXP’s JEDEC-registered TO series is the only over-molded plastic package series specifically designed for high-power RF applications – Bolt down, clamp down and solder reflow mounting options NI-1230H-4S NI-780S-4L OM-270-2 – Low thermal resistance flange material – 225°C TJ maximum operating temperature – Power dissipation capabilities >1 kW – In-package impedance matching NI-1230S-4S OM-780-4 TO-270WB-4 OM-270-8 – Low Au solderable finish for improved reliability – Plastic package with a larger contact area for optimal thermal performance  Manufacturing – Automated high-volume assembly and test – Multiple manufacturing locations   Materials – RoHS compliant Not to scale www.nxp.com 9 NXP RF Aerospace and Defense Solutions Why Choose NXP?   Best-in-class RF performance   Industry-leading package designs   Reliable and repeatable RF performance   Consistent high quality   Proven long-term reliability   High-volume manufacturing capability   Assured long-term supply   Comprehensive U.S. and Eurozone sales and design support Design Support For information on design support for RF aerospace and defense products, visit www.nxp.com/RFmilitary.  Application-specific reference designs  Test and evaluation fixtures  Fully validated RF high-power models for Keysight ADS and AWR Microwave Office®  MTTF calculation programs  50 V RF LDMOS white paper  Packaging and mounting application notes  Thermal management application notes Sample/Buy For ordering and availability, contact your local NXP sales office or NXP authorized distributor. 10 NXP RF Aerospace and Defense Solutions Notes: www.nxp.com 11 www.nxp.com/RFmilitary NXP and the NXP logo are trademarks of NXP B.V. All other product or service names are the property of their respective owners. © 2016 NXP B.V. Document Number: BR1611 Rev. 4.1 5/2016