MMRF5014HR5

NXP Semiconductors Technical Data Document Number: MMRF5014H Rev. 3, 05/2018 RF Power GaN Transistor This 125 W CW RF power transistor is optimized for wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and wideband RF applications. This part is characterized and performance is guaranteed for applications operating in the 1–2700 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies. MMRF5014H 1–2700 MHz, 125 W CW, 50 V WIDEBAND RF POWER GaN TRANSISTOR Typical Narrowband Performance: VDD = 50 Vdc, IDQ = 350 mA, TA = 25C Frequency (MHz) Signal Type Pout (W) Gps (dB) D (%) 2500 (1) CW 125 CW 16.0 64.2 Pulse (100 sec, 20% Duty Cycle) 125 Peak 18.0 66.8 2500 (1) NI--360H--2SB Typical Wideband Performance: VDD = 50 Vdc, TA = 25C Frequency (MHz) Signal Type Pout (W) Gps (2) (dB) D (2) (%) 200–2500 (3) CW 100 CW 12.0 40.0 1300–1900 (4) CW 125 CW 14.5 45.0 Result 1 Drain Gate 2 Load Mismatch/Ruggedness Frequency (MHz) 2500 (1) Signal Type VSWR Pin (W) Test Voltage Pulse (100 sec, 20% Duty Cycle) > 20:1 at All Phase Angles 5.0 Peak (3 dB Overdrive) 50 No Device Degradation 1. Measured in 2500 MHz narrowband test circuit. 2. The values shown are the minimum measured performance numbers across the indicated frequency range. 3. Measured in 200–2500 MHz broadband reference circuit. 4. Measured in 1300–1900 MHz broadband reference circuit. (Top View) Note: The backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Features      Advanced GaN on SiC, offering high power density Decade bandwidth performance Low thermal resistance Input matched for extended wideband performance High ruggedness: > 20:1 VSWR Typical Applications  Ideal for military end--use applications, including the following: – Narrowband and multi--octave wideband amplifiers – Radar – Jammers – EMC testing  2015, 2017–2018 NXP B.V. RF Device Data NXP Semiconductors  Also suitable for commercial applications, including the following: – Public mobile radios, including emergency service radios – Industrial, scientific and medical – Wideband laboratory amplifiers – Wireless cellular infrastructure MMRF5014H 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS 125 Vdc Gate--Source Voltage VGS –8, 0 Vdc Operating Voltage VDD 0 to +50 Vdc IGMAX 18 mA Storage Temperature Range Tstg – 65 to +150 C Case Operating Temperature Range TC –55 to +150 C Maximum Forward Gate Current @ TC = 25C Operating Junction Temperature Range Absolute Maximum Channel Temperature (1) Total Device Dissipation @ TC = 25C Derate above 25C TJ –55 to +225 C TMAX 350 C PD 232 1.16 W W/C Symbol Value 0.86 (2) C/W RCHC (FEA) 1.48 (3) C/W ZJC (IR) 0.21 C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance by Infrared Measurement, Active Die Surface--to--Case CW: Case Temperature 82C, 125 W CW, 50 Vdc, IDQ = 350 mA, 2500 MHz RJC (IR) Thermal Resistance by Finite Element Analysis, Channel--to--Case Case Temperature 85C, PD = 85 W Thermal Impedance by Infrared Measurement, Junction--to--Case Pulse: Case Temperature 58C, 125 W Peak, 100 sec Pulse Width, 20% Duty Cycle, 50 Vdc, IDQ = 350 mA, 2500 MHz Unit Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1B, passes 500 V Machine Model (per EIA/JESD22--A115) A, passes 100 V Charge Device Model (per JESD22--C101) IV, passes 2000 V Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IDSS — — 5 mAdc V(BR)DSS 150 — — Vdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 25 mAdc) VGS(th) –3.8 –2.9 –2.3 Vdc Gate Quiescent Voltage (VDS = 50 Vdc, ID = 350 mAdc, Measured in Functional Test) VGS(Q) –3.2 –2.7 –2.2 Vdc Reverse Transfer Capacitance (VDS = 50 Vdc  30 mV(rms)ac @ 1 MHz, VGS = –4 Vdc) Crss — 1.0 — pF Output Capacitance (VDS = 50 Vdc  30 mV(rms)ac @ 1 MHz, VGS = –4 Vdc) Coss — 7.7 — pF Input Capacitance (4) (VDS = 50 Vdc, VGS = –4 Vdc  30 mV(rms)ac @ 1 MHz) Ciss — 51.0 — pF Off Characteristics Drain Leakage Current (VGS = –8 Vdc, VDS = 10 Vdc) Drain--Source Breakdown Voltage (VGS = –8 Vdc, ID = 25 mAdc) On Characteristics Dynamic Characteristics 1. Reliability tests were conducted at 225C. Operation with TMAX at 350C will reduce median time to failure. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. 3. RJC (FEA) must be used for purposes related to reliability and limitations on maximum junction temperature. MTTF may be estimated by the expression MTTF (hours) = 10[A + B/(T + 273)], where T is the junction temperature in degrees Celsius, A = –8.44 and B = 7210. 4. Part internally input matched. (continued) MMRF5014H 2 RF Device Data NXP Semiconductors Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (In NXP Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 350 mA, Pout = 125 W Peak (25 W Avg.), f = 2500 MHz, 100 sec Pulse Width, 20% Duty Cycle. [See note on correct biasing sequence.] Power Gain Gps 17.0 18.0 20.0 dB Drain Efficiency D 64.3 66.8 — % Input Return Loss IRL — –12 –9 dB Load Mismatch/Ruggedness (In NXP Test Fixture, 50 ohm system) IDQ = 350 mA Frequency (MHz) 2500 Signal Type VSWR Pulse (100 sec, 20% Duty Cycle) > 20:1 at All Phase Angles Pin (W) Test Voltage, VDD Result 50 No Device Degradation 5.0 Peak (3 dB Overdrive) Table 5. Ordering Information Device MMRF5014HR5 Tape and Reel Information R5 Suffix = 50 Units, 32 mm Tape Width, 13--inch Reel Package NI--360H--2SB NOTE: Correct Biasing Sequence for GaN Depletion Mode Transistors Turning the device ON 1. Set VGS to –5 V 2. Turn on VDS to nominal supply voltage (50 V) 3. Increase VGS until IDS current is attained 4. Apply RF input power to desired level Turning the device OFF 1. Turn RF power off 2. Reduce VGS down to –5 V 3. Reduce VDS down to 0 V (Adequate time must be allowed for VDS to reduce to 0 V to prevent severe damage to device.) 4. Turn off VGS MMRF5014H RF Device Data NXP Semiconductors 3 500–2500 MHz WIDEBAND REFERENCE CIRCUIT — 2.0  4.0 (5.1 cm  10.2 cm) C6 C7* C8* C9 L2 C2* L1 Q1 C1* R4 C4* C3 R5 C16* C13* C14* C15* C5* R3 MMRF5014H Rev. 0 R2 R1 C12* C10* C11* D77847 + D1 *C1, C2, C4, C5, C7, C8, C10, C11, C12, C13, C14, C15 and C16 are mounted vertically. Figure 2. MMRF5014H Wideband Reference Circuit Component Layout — 500–2500 MHz Table 6. MMRF5014H Wideband Reference Circuit Component Designations and Values — 500–2500 MHz Part Description Part Number Manufacturer C1, C5, C7 33 pF Chip Capacitors ATC800B330JT500XT ATC C2 0.4 pF Chip Capacitor ATC800B0R4BT500XT ATC C3 2.2 F, 16 V Tantalum Capacitor T491A225K016AT Kemet C4, C8 1000 pF Chip Capacitors ATC800B102JT50XT ATC C6 220 F, 50 V Electrolytic Capacitor EEV-HA1H221P Panasonic-ECG C9 2.2 F Chip Capacitor HMK432B7225KM-T Taiyo Yuden C10, C11 0.8 pF Chip Capacitors ATC800B0R8BT500XT ATC C12, C13 9.1 pF Chip Capacitors ATC800B9R1BT500XT ATC C14, C16 0.5 pF Chip Capacitors ATC800B0R5BT500XT ATC C15 0.2 pF Chip Capacitor ATC800B0R2BT500XT ATC D1 LED Green Diffused 1206, SMD LGN971-KN-1 OSRAM L1 33 nH Inductor 1812SMS-33NJLC Coilcraft L2 17.5 nH Inductor, 5 Turns GA3095-ALC Coilcraft Q1 RF Power GaN Transistor MMRF5014H NXP R1 75 , 1/4 W Chip Resistor CRCW120675R0FKEA Vishay R2 500  Trimming Potentiometer, 11 Turns 3224W-1-501E Bourns R3 470 , 1/4 W Chip Resistor CRCW1206470RFKEA Vishay R4, R5 39 , 1/4 W Chip Resistors CRCW120639R0FKEA Vishay PCB Rogers RO4350B 0.030, r = 3.66 D77847 MTL Note: Refer to MMRF5014H’s printed circuit boards and schematics to download the 500–2500 MHz heatsink drawing. MMRF5014H 4 RF Device Data NXP Semiconductors TYPICAL CHARACTERISTICS — 500–2500 MHz WIDEBAND REFERENCE CIRCUIT VDD = 50 Vdc, IDQ = 300 mA, CW Gps, POWER GAIN (dB) 20 19 18 17 100 W D 50 45 16 15 14 13 12 11 10 400 Gps 10 W 65 60 55 100 W 40 35 30 25 20 D, DRAIN EFFICIENCY (%) 70 22 21 15 10 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 f, FREQUENCY (MHz) Figure 3. 500–2500 MHz Wideband Circuit Performance MMRF5014H RF Device Data NXP Semiconductors 5 200–2500 MHz WIDEBAND REFERENCE CIRCUIT — 4.0  5.0 (10.2 cm  12.7 cm) Section AA MMRF5014H Rev. 6 D68303 T2 R1** C2* C1** C17* C16* C15* Q1 C3* L2 R3 R4 R2** C6* C13* L1 C11 B1 B1 B2 T1 See Detail BB T1 C12* C5 C4 T2 T2 VDD C7 C8 C9 C10 C14 VGG **C1, C2, C3, C6, C12, C13, C15, C16, C17, R1, and R2 are mounted vertically. **Stacked T2 C17* C16* Section AA B1 B2 C15* T1 Detail BB 2X Figure 4. MMRF5014H Wideband Reference Circuit Component Layout — 200–2500 MHz MMRF5014H 6 RF Device Data NXP Semiconductors Table 7. MMRF5014H Wideband Reference Circuit Component Designations and Values — 200–2500 MHz Part Description Part Number Manufacturer B1, B2 Ferrite Beads T22-6 Micro Metals C1 56 pF Chip Capacitor ATC800B560JT500XT ATC C2 75 pF Chip Capacitor ATC800B750JT500XT ATC C3 1.6 pF Chip Capacitor ATC800B1R6BT500XT ATC C4 6.8 F Chip Capacitor C4532X7R1H685K TDK C5, C8, C9, C11 0.015 F Chip Capacitors GRM319R72A153KA01D Murata C6, C12 5.6 pF Chip Capacitors ATC800B5R6BT500XT ATC C7, C10 1 F Chip Capacitors GRM31CR72A105KAO1L Murata C13 1.4 pF Chip Capacitor ATC800B1R4BT500XT ATC C14 220 F, 100 V Electrolytic Capacitor EEV-FK2A221M Panasonic-ECG C15, C17 0.9 pF Chip Capacitors ATC800B0R9BT500XT ATC C16 47 pF Chip Capacitor ATC800B470JT500XT ATC L1 12.5 nH Inductor, 4 Turns A04TJLC Coilcraft L2 22 nH Inductor 1812SMS-22NJLC Coilcraft Q1 RF Power GaN Transistor MMRF5014H NXP R1, R2 10 , 3/4 W Chip Resistors CRCW201010R0FKEF Vishay R3, R4 39 , 1/4 W Chip Resistors CRCW120639R0FKEA Vishay T1 25  Semi Rigid Coax, 0.770 Shield Length UT-070-25 Micro--Coax T2 25  Semi Rigid Coax, 0.850 Shield Length UT-070-25 Micro--Coax PCB Rogers RO4350B, 0.030, r = 3.66 D68303 MTL Note: Refer to MMRF5014H’s printed circuit boards and schematics to download the 200–2500 MHz heatsink drawing. MMRF5014H RF Device Data NXP Semiconductors 7 TYPICAL CHARACTERISTICS — 200–2500 MHz WIDEBAND REFERENCE CIRCUIT VDD = 50 Vdc, IDQ = 350 mA, CW Gps, POWER GAIN (dB) 21 20 55 100 W 19 D 50 45 18 17 16 15 14 13 12 11 200 70 65 60 40 35 30 Gps 10 W 25 20 100 W 600 1000 1400 1800 2200 D, DRAIN EFFICIENCY (%) 23 22 15 10 2600 f, FREQUENCY (MHz) Figure 5. 200–2500 MHz Wideband Circuit Performance MMRF5014H 8 RF Device Data NXP Semiconductors TYPICAL CHARACTERISTICS — OPTIMIZED NARROWBAND PERFORMANCE Narrowband Performance and Impedance Information (TC = 25C) The measured input and output impedances are presented to the input of the device at the package reference plane. Measurements are performed in NXP narrowband fixture tuned at 500, 1000, 1500, 2000 and 2500 MHz. VDD = 50 Vdc, IDQ = 300 mA, CW 30 Gps, POWER GAIN (dB) 28 1000 MHz 500 MHz 80 2500 MHz 500 MHz 26 24 2000 MHz D 1500 MHz 22 20 1500 MHz 18 Gps 20 40 60 80 100 24 16 8 12 0 56 48 32 2000 MHz 14 64 40 1000 MHz 2500 MHz 16 72 D, DRAIN EFFICIENCY (%) 32 120 140 160 180 0 200 Pout, OUTPUT POWER (WATTS) Figure 6. Power Gain and Drain Efficiency versus CW Output Power f MHz Zsource  Zload  500 1.3 + j3.9 5.9 + j3.5 1000 1.0 + j0.3 5.5 + j2.9 1500 0.8 – j0.5 3.4 + j2.0 2000 1.2 – j2.0 4.7 + j0.3 2500 2.7 – j3.8 3.7 + j1.4 Zsource = Test circuit impedance as measured from gate to ground. Zload 50  = Test circuit impedance as measured from drain to ground. Input Matching Network Output Matching Network Device Under Test Zsource 50  Zload Figure 7. Narrowband Fixtures: Series Equivalent Source and Load Impedances MMRF5014H RF Device Data NXP Semiconductors 9 1300–1900 MHz WIDEBAND REFERENCE CIRCUIT — 2.0  3.0 (5.1 cm  7.6 cm) VGG R1 D1 C2 C3 C4 R2 C5 C6 C7 C8 R3 R4 R5 L1 VDD L2 Q1 C1 C9* MMRF5014H Rev. 1 D67114 *C9 is mounted vertically. Figure 8. MMRF5014H Wideband Reference Circuit Component Layout — 1300–1900 MHz Table 8. MMRF5014H Wideband Reference Circuit Component Designations and Values — 1300–1900 MHz Part Description Part Number Manufacturer C1 18 pF Chip Capacitor ATC600S180CT250XT ATC C2 2.2 F Tantalum Capacitor T491A225K016AT Kemet C3, C6 1000 pF Chip Capacitors ATC800B102JT50XT ATC C4, C5 33 pF Chip Capacitors ATC800B330JT500XT ATC C7 2.2 F Chip Capacitor HMK432B7225KM-T Taiyo Tuden C8 47 F, 100 V Electrolytic Capacitor 476KXM050M Panasonic-ECG C9 9.1 pF Chip Capacitor ATC800B9R1BT500XT ATC D1 LED Green Diffused 1206, SMD LGN971--KN--1 OSRAM Q1 RF Power GaN Transistor MMRF5014H NXP R1 75 , 1/4 W Chip Resistor CRCW120675R0FKEA Vishay R2 5 k Trimming Potentiometer, 11 Turns 3224W-1-502E Bourns R3 5 k, 1/4 W Chip Resistor CRCW12065K00FKEA Vishay R4, R5 39 , 1/4 W Chip Resistors CRCW120639R0FKEA Vishay L1, L2 33 nH Inductors 1812SMS-33NJLC Coilcraft PCB Rogers 3010, 0.025, r = 10.2 D67114 MTL MMRF5014H 10 RF Device Data NXP Semiconductors TYPICAL CHARACTERISTICS — 1300–1900 MHz WIDEBAND REFERENCE CIRCUIT 70 VDD = 50 Vdc, IDQ = 200 mA, Pout = 125 W, CW 28 66 Gps, POWER GAIN (dB) 26 62 24 58 D 22 54 50 20 18 46 Gps 16 42 14 38 D, DRAIN EFFICIENCY (%) 30 34 12 10 1300 1400 1500 1600 1700 1800 30 1900 f, FREQUENCY (MHz) Figure 9. Power Gain and Drain Efficiency versus Frequency 75 VDD = 50 Vdc, IDQ = 200 mA, CW 18 Gps, POWER GAIN (dB) 70 1900 MHz 16 14 Gps 1600 MHz 60 1900 MHz 55 1600 MHz 50 1300 MHz 45 1300 MHz 12 10 8 D 6 65 40 4 35 2 30 0 0 20 40 60 80 100 120 140 160 D, DRAIN EFFICIENCY (%) 20 25 180 Pout, OUTPUT POWER (WATTS) Figure 10. Power Gain and Drain Efficiency versus CW Output Power MMRF5014H RF Device Data NXP Semiconductors 11 2500 MHz NARROWBAND PRODUCTION TEST FIXTURE — 4.0  5.0 (10.2 cm  12.7 cm) VGG VDD D65152 C8 C12 R2 C14 C7 C10 C2 C3 C4 C5 C13 C9 R1 CUT OUT AREA C1 C6 C11 MMRF5014H Rev. 4 Figure 11. MMRF5014H Narrowband Test Circuit Component Layout — 2500 MHz Table 9. MMRF5014H Narrowband Test Circuit Component Designations and Values — 2500 MHz Part Description Part Number Manufacturer C1 3.9 pF Chip Capacitor ATC600F3R9BT250XT ATC C2, C3, C4, C5, C6 12 pF Chip Capacitors ATC600F120JT250XT ATC C7, C14 4.7 F Chip Capacitors C4532X7R1H475K200KB TDK C8 0.1 F Chip Capacitor GRM319R72A104KA01D Murata C9 1.0 F Chip Capacitor GRM32CR72A105KA35L Murata C10 220 F, 100 V Electrolytic Capacitor EEV-FK2A221M Panasonic-ECG C11 1 pF Chip Capacitor ATC600F1R0BT250XT ATC C12, C13 1000 pF Chip Capacitors ATC800B102JT50XT ATC R1 56 , 1/4 W Chip Resistor CRCW120656R0FKEA Vishay R2 0 , 5 A Chip Resistor CRCW12100000Z0EA Vishay PCB Rogers RO4350B, 0.030, r = 3.66 D65152 MTL MMRF5014H 12 RF Device Data NXP Semiconductors Z9 VBIAS Z16 Z8 Z17 R2 + C14 C7 C8 C12 C2 C3 C4 Z7 C13 C9 Z6 Z1 Z2 Z3 Z4 C10 Z15 R1 RF INPUT C5 VSUPPLY Z5 Z10 Z11 Z12 Z13 C1 C11 Z14 RF OUTPUT C6 DUT Figure 12. MMRF5014H Narrowband Test Circuit Schematic — 2500 MHz Table 10. MMRF5014H Narrowband Test Circuit Microstrips — 2500 MHz Microstrip Description Microstrip Description Z1 1.870  0.064 Microstrip Z10 Z2, Z3 0.030  0.070 Microstrip Z11 0.353  0.515 Microstrip Z4 0.105  0.525 Microstrip Z12 0.040  0.064 Microstrip Z5* 0.240  0.525 Microstrip Z13 0.687  0.064 Microstrip Z6 0.037  0.050 Microstrip Z14 1.020  0.064 Microstrip Z7 0.465  0.050 Microstrip Z15 0.468  0.050 Microstrip Z8 0.090  0.050 Microstrip Z16 0.158  0.050 Microstrip Z9 0.190  0.050 Microstrip Z17 0.078  0.050 Microstrip 0.145  0.515 Microstrip * Line length include microstrip bends MMRF5014H RF Device Data NXP Semiconductors 13 22 21 20 19 18 17 16 15 14 13 12 11 10 9 70 IDQ = 350 mA, f = 2500 MHz Pulse Width = 100 sec Duty Cycle = 20% 40 V 35 V 60 D, DRAIN EFFICIENCY (%) 50 V 45 V 30 V VDD = 25 V 10 30 50 50 30 V 35 V 40 30 IDQ = 350 mA, f = 2500 MHz Pulse Width = 100 sec Duty Cycle = 20% 20 10 70 90 110 130 150 170 190 20 0 40 60 80 100 120 140 180 160 Pout, OUTPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK Figure 13. Power Gain versus Output Power and Drain Voltage (1) Figure 14. Drain Efficiency versus Output Power and Drain Voltage (1) 180 22 160 140 –55C 85C 120 100 80 60 40 VDD = 50 Vdc, IDQ = 350 mA, f = 2500 MHz Pulse Width = 100 sec, Duty Cycle = 20% 20 1 2 3 4 5 6 85_C 20 40 85_C 18 30 Gps 17 15 70 50 25_C 25_C 19 D 60 –55_C IDQ = 350 mA, f = 2500 MHz Pulse Width = 100 sec Duty Cycle = 20% 16 0 0 TC = –55_C 21 TC = 25C Gps, POWER GAIN (dB) Pout, OUTPUT POWER (WATTS) PEAK VDD = 25 V 50 V 45 V 40 V 0 20 40 60 80 100 20 10 120 140 160 180 Pin, INPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK Figure 15. Output Power versus Input Power (1) Figure 16. Power Gain and Drain Efficiency versus Output Power (1) D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS — 2500 MHz 0 200 1. Circuit tuned for maximum power. MMRF5014H 14 RF Device Data NXP Semiconductors PACKAGE DIMENSIONS Pin 1. Drain 2. Gate 3. Source MMRF5014H RF Device Data NXP Semiconductors 15 MMRF5014H 16 RF Device Data NXP Semiconductors PRODUCT DOCUMENTATION AND TOOLS Refer to the following resources to aid your design process. Application Notes  AN1955: Thermal Measurement Methodology of RF Power Amplifiers Development Tools  Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. 2. 3. 4. Go to http://www.nxp.com/RF Search by part number Click part number link Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 May 2015  Initial Release of Data Sheet 1 Sept. 2015  Table 1, Maximum Ratings: added Maximum Forward Gate Current, p. 2  Table 4, Electrical Characteristics: changed Load Mismatch/Ruggedness signal type to pulse to reflect correct modulation signal, p. 3  Biasing sequence for GaN depletion mode transistors: revised note to clarify correct biasing sequence for GaN parts, p. 3  500–2500 MHz wideband reference circuit: added performance data and graph, reference circuit component layout and component designations, pp. 4–5  Table 2, Thermal Characteristics: updated to include RCHC (FEA) data, p. 2 2 3 Apr. 2017 May 2018 Description MMRF5014H RF Device Data NXP Semiconductors 17 How to Reach Us: Home Page: nxp.com Web Support: nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. NXP does not convey any license under its patent rights nor the rights of others. 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