MMRF5017HSR5

NXP Semiconductors Technical Data Document Number: MMRF5017HS Rev. 0, 06/2018 RF Power GaN Transistor This 125 W RF power GaN transistor is capable of broadband operation from 30 to 2200 MHz and inc ludes input matc hing for ex tended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and broadband RF applications. This part is characterized and performance is guaranteed for applications operating in the 30 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies. MMRF5017HS 30–2200 MHz, 125 W CW, 50 V WIDEBAND RF POWER GaN TRANSISTOR Typical Performance: VDD = 50 Vdc, TA = 25C Frequency (MHz) Signal Type Pout (W) Gps (dB) D (%) 30–940 (1,2) CW 90 16.0 45.0 520 (1) CW 125 18.0 59.1 940 (1) CW 80 18.4 44.0 2200 Pulse (100 sec, 20% Duty Cycle) 200 17.0 57.0 NI--400S--2S Load Mismatch/Ruggedness Frequency (MHz) 520 (1) Signal Type VSWR Pin (W) Test Voltage Pulse (100 sec, 20% Duty Cycle) > 10:1 at All Phase Angles 3.4 (3 dB Overdrive) 50 Result No Device Degradation 1 Drain Gate 2 1. Measured in 30–940 MHz wideband reference circuit (page 4). 2. The values shown are the minimum measured efficiency performance numbers across the indicated frequency range. Features  Advanced GaN on SiC, offering high power density  Decade bandwidth performance  Input matched for extended wideband performance (Top View) Note: The backside of the package is the source terminal for the transistor. Figure 1. Pin Connections  High ruggedness: > 10:1 VSWR Typical Applications  Ideal for military end--use applications, including the following: – Narrowband and multi--octave wideband amplifiers – Radar – Jammers – EMC testing  Also suitable for commercial applications, including the following: – Public mobile radios, including emergency service radios – Industrial, scientific and medical – Wideband laboratory amplifiers – Wireless cellular infrastructure This document contains information on a preproduction product. Specifications and information herein are subject to change without notice.  2018 NXP B.V. RF Device Data NXP Semiconductors MMRF5017HS 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS 125 Vdc Gate--Source Voltage VGS –8, 0 Vdc Operating Voltage VDD 0 to +55 Vdc Maximum Forward Gate Current @ TC = 25C IGMAX 24 mA Storage Temperature Range Tstg – 65 to +150 C Case Operating Temperature Range TC – 55 to +150 C TJ – 55 to +225 C TMAX 350 C PD 154 0.77 W W/C Symbol Value Unit RJC (IR) (3) C/W Operating Junction Temperature Range Absolute Maximum Channel Temperature (1) Total Device Dissipation @ TC = 25C Derate above 25C Table 2. Thermal Characteristics Characteristic (2) Thermal Resistance by Infrared Measurement, Active Die Surface--to--Case CW: Case Temperature 81C, 80 W CW, 50 Vdc, IDQ = 200 mA, 940 MHz Thermal Resistance by Finite Element Analysis, Channel--to--Case Case Temperature 90C, PD = 96 W 1.3 1.77 (4) RCHC (FEA) C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JS--001--2017) 2, passes 2500 V Charge Device Model (per JS--002--2014) II, passes 200 V Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 150 — — Vdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 20 mAdc) VGS(th) –3.8 –3.0 –2.3 Vdc Gate Quiescent Voltage (VDD = 48 Vdc, ID = 200 mAdc, Measured in Functional Test) VGS(Q) –3.6 –3.1 –2.3 Vdc IGSS –7.5 — — mAdc Characteristic Off Characteristics Drain--Source Breakdown Voltage (VGS = –8 Vdc, ID = 20 mAdc) On Characteristics Gate--Source Leakage Current (VDS = 0 Vdc, VGS = –5 Vdc) Table 5. Ordering Information Device MMRF5017HSR5 1. 2. 3. 4. Tape and Reel Information R5 Suffix = 50 Units, 32 mm Tape Width, 13--inch Reel Package NI--400S--2S Reliability tests were conducted at 225C. Operation with TMAX at 350C will reduce median time to failure. Characterized in 30–940 MHz reference circuit at 940 MHz and 80 W CW output power. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. RCHC (FEA) must be used for purposes related to reliability and limitations on maximum channel temperature. MTTF may be estimated by the expression MTTF (hours) = 10[A + B/(T + 273)], where T is the channel temperature in degrees Celsius, A = –10.3 and B = 8260. MMRF5017HS 2 RF Device Data NXP Semiconductors NOTE: Correct Biasing Sequence for GaN Depletion Mode Transistors Turning the device ON 1. Set VGS to –5 V 2. Turn on VDS to nominal supply voltage (50 V) 3. Increase VGS until IDS current is attained 4. Apply RF input power to desired level Turning the device OFF 1. Turn RF power off 2. Reduce VGS down to –5 V 3. Reduce VDS down to 0 V (Adequate time must be allowed for VDS to reduce to 0 V to prevent severe damage to device.) 4. Turn off VGS MMRF5017HS RF Device Data NXP Semiconductors 3 30–940 MHz WIDEBAND REFERENCE CIRCUIT — 2.0  5.0 (5.1 cm  12.7 cm) J1 C5 R4 C3* C11* C6 Rev. 0 D103193 C9* L7 L2 C4* L6 C10 C7* C8 R3 L1 L4 L5 C13* C14* C2* C1* R2 L3 C17* T1 R1 C19* C15 Q1 C16* C18* T2 C12* *C1, C2, C3, C4, C7, C9, C11, C12, C13, C14, C16, C17, C18 and C19 are mounted vertically. aaa-030768 Figure 2. MMRF5017HS Wideband Reference Circuit Component Layout — 30–940 MHz Table 6. MMRF5017HS Wideband Reference Circuit Component Designations and Values — 30–940 MHz Part Description Part Number Manufacturer C1 1500 pF Chip Capacitor ATC700B152JT50XT ATC C2 100 pF Chip Capacitor ATC800B101JT500XT ATC C3, C7 39 pF Chip Capacitor ATC800B390JT500XT ATC C4 680 pF Chip Capacitor ATC800B681JT50XT ATC C5, C8 2.2 F Chip Capacitor C3225X7R2A225KT TDK C6 22 F, 25 V Tantalum Capacitor TPSD226M025R0200 AVX C9 0.1 F Chip Capacitor C1206C104K1RACTU Kemet C10 220 F, 100 V Electrolytic Capacitor EEV--FK2A221M Panasonic–ECG C11 220 pF Chip Capacitor ATC100B221JT200XT ATC C12 2.2 pF Chip Capacitor ATC800B2R2BT500XT ATC C13, C14, C19 5.6 pF Chip Capacitor ATC800B5R6CT500XT ATC C15 10 pF Chip Capacitor ATC800B100JT500XT ATC C16, C18 470 pF Chip Capacitor ATC800B471JT200XT ATC C17 330 pF Chip Capacitor ATC800B331JT200XT ATC J1 #16 AWG, Magnetic Wire, Length = 2.5 8074 Belden L1 270 nH Inductor 0603AF--271XJRU Coilcraft L2 422 nH inductor 132--18SMJL Coilcraft L3 240 nH Inductor 0603AF--241XJRU Coilcraft L4, L5, L6, L7 1.3 H Inductor 4310LC--132KE Coilcraft Q1 RF Power GaN Transistor MMRF5017HS NXP R1 51 , 1/2 W Chip Resistor CRCW201051R0JNEF Vishay R2 10 , 1/4 W Chip Resistor CRCW080510R0FKEA Vishay R3, R4 100 , 4 W Chip Resistor CW12010T0100GBK ATC T1, T2 High Power Transformer, 30–1000 MHz, 50  to 12.5  XMT0310B5012 Anaren PCB Shengyi S1000--2, 0.031, r = 4.8 D103193 MTL MMRF5017HS 4 RF Device Data NXP Semiconductors TYPICAL CHARACTERISTICS — 30–940 MHz WIDEBAND REFERENCE CIRCUIT 75 30 VDD = 50 Vdc, IDQ = 200 mA, CW Gps, POWER GAIN (dB) 90 W 65 D 26 55 24 45 22 35 10 W 20 25 Gps 18 15 90 W 16 0 100 300 200 400 500 600 700 800 D, DRAIN EFFICIENCY (%) 28 5 900 1000 f, FREQUENCY (MHz) Figure 3. Power Gain and Drain Efficiency versus Output Power and Frequency 24 75 VDD = 50 Vdc, IDQ = 200 mA, CW, f = 520 MHz 65 Gps 20 55 45 18 D 16 35 14 25 12 15 10 0 20 40 60 80 100 120 140 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 22 5 160 Pout, OUTPUT POWER (WATTS) Figure 4. Power Gain and Drain Efficiency versus CW Output Power – 520 MHz 21 50 VDD = 50 Vdc, IDQ = 200 mA, CW, f = 940 MHz 45 Gps 19 40 35 18 D 17 30 16 25 15 20 14 0 20 40 60 80 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 20 15 100 Pout, OUTPUT POWER (WATTS) Figure 5. Power Gain and Drain Efficiency versus CW Output Power – 940 MHz MMRF5017HS RF Device Data NXP Semiconductors 5 30–940 MHz WIDEBAND REFERENCE CIRCUIT f MHz Zsource  Zload  20 39.0 + j23.1 11.3 – j5.0 30 59.6 – j3.7 11.0 – j3.1 50 28.3 – j28.7 11.1 – j1.8 70 15.5 – j22.2 11.2 – j1.3 90 11.1 – j17.3 11.3 – j1.1 136 7.9 – j11.3 10.7 – j1.4 174 7.0 – j8.9 10.0 – j0.3 360 6.2 – j5.0 11.9 – j0.2 440 6.0 – j4.6 11.9 – j0.0 520 5.5 – j4.7 12.3 – j0.1 760 2.5 – j4.0 14.4 – j1.2 850 1.7 – j2.9 16.2 – j3.5 940 1.1 – j1.8 15.9 – j7.9 1000 1.0 – j1.1 13.2 – j10.6 Zsource = Test circuit impedance as measured from gate to ground. Zload 50  = Test circuit impedance as measured from drain to ground. Device Under Test Input Matching Network Z source Output Matching Network Z 50  load Figure 6. Wideband Series Equivalent Source and Load Impedance — 30–940 MHz MMRF5017HS 6 RF Device Data NXP Semiconductors PACKAGE DIMENSIONS MMRF5017HS RF Device Data NXP Semiconductors 7 MMRF5017HS 8 RF Device Data NXP Semiconductors PRODUCT DOCUMENTATION AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers   Development Tools  Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. 2. 3. 4. Go to http://www.nxp.com/RF Search by part number Click part number link Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 June 2018 Description  Initial release of data sheet MMRF5017HS RF Device Data NXP Semiconductors 9 How to Reach Us: Home Page: nxp.com Web Support: nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. 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E 2018 NXP B.V. MMRF5017HS Document Number: MMRF5017HS Rev. 0, 06/2018 10 RF Device Data NXP Semiconductors