MMZ25333BT1

Freescale Semiconductor Technical Data Document Number: MMZ25333B Rev. 1, 8/2014 2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT The MMZ25333B is a versatile 3--stage power amplifier targeted at driver and pre--driver applications for macro and micro base stations and final--stage applications for small cells. Its versatile design allows operation in any frequency band from 1500 to 2700 MHz providing gain of more than 40 dB. The device operates off a 5 V supply, and its bias currents and portions of the matching networks are adjustable for optimum performance in any specific application. It is housed in a QFN 4  4 surface mount package. MMZ25333BT1 1500–2700 MHz, 44.2 dB, 31.7 dBm InGaP HBT LINEAR AMPLIFIER  Typical PA Driver Performance: VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, ICQ = 265 mA Frequency Pout (dBm) Gps (dB) ACPR (dBc) ICC Total Test Signal 2600 MHz 18.0 42.6 –50.8 296 W--CDMA 2140 MHz 17.0 43.7 –50.7 293 W--CDMA QFN 4  4  Typical Output PA Performance: VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, ICQ = 450 mA Frequency Pout (dBm) Gps (dB) ACPR (dBc) ICC Total Test Signal 2600 MHz 22.2 42.7 –48.0 501 W--CDMA Features         P1dB: up to 33 dBm Gain: More than 40 dB 5 V Supply Excellent Linearity High Efficiency Single--ended Power Detector Band Tunable In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. VCC1/ RFout1 RFin2 VCC2 PDET VCC3/RFout3 RFin1 VCC3/RFout3 VCC3/RFout3 BIAS CIRCUIT VBA1 VBA2 VBIAS Figure 1. Functional Block Diagram  Freescale Semiconductor, Inc., 2014. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MMZ25333BT1 1 Table 1. Maximum Ratings Rating Symbol Value Unit VCC 6 V ICC 66 240 960 mA RF Input Power Pin 10 dBm Storage Temperature Range Tstg –65 to +150 C Junction Temperature TJ 175 C Symbol Value (1) Supply Voltage Supply Current ICC1 ICC2 ICC3 Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 104C, VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc RJC Stage 1 Stage 2 Stage 3 Unit C/W 28 68 21 Table 3. Electrical Characteristics (VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, 2600 MHz, TA = 25C, 50 ohm system, in Freescale PA Driver Application Circuit) Symbol Min Typ Max Unit Small--Signal Gain (S21) Gp Input Return Loss (S11) IRL 40.4 43.0 — dB — –12.2 — dB Output Return Loss (S22) ORL — –7.1 — dB Power Output @ 1dB Compression P1dB — 32.0 — dBm Third Order Output Intercept Point, Two--Tone CW OIP3 — 42.8 — dBm Total Supply Current (ICC1 + ICC2 + ICC3 + IBIAS) ICQ 244 265 284 mA Supply Voltage VCC — 5 — V Characteristic 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. MMZ25333BT1 2 RF Device Data Freescale Semiconductor, Inc. Table 4. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1C Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) IV Table 5. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit 1 260 C Per JESD22--A113, IPC/JEDEC J--STD--020 VCC1/ RFout1 N.C. RFin2 N.C. VCC2 PDET 24 23 22 21 20 19 N.C. 1 18 N.C. 2 17 VCC3/RFout3 N.C. 3 RFin1 4 GND N.C. 16 VCC3/RFout3 15 VCC3/RFout3 N.C. 5 14 N.C. N.C. 6 13 N.C. 7 8 9 10 11 12 N.C. VBA1 VBA2 VBIAS N.C. N.C. (Top View) Note: Exposed backside of the package is DC and RF ground. N.C. can be connected to GND. Figure 2. Pin Connections MMZ25333BT1 RF Device Data Freescale Semiconductor, Inc. 3 50 OHM APPLICATION CIRCUIT: 2500–2700 MHz VCC2 VCC1 L2 R3 C11 C10 C16 C12 L1 C15 PDET C18 C6 C5 L3 24 RF INPUT 23 22 21 20 VCC3 19 1 18 2 17 3 16 C13 RF OUTPUT Z1 4 15 5 14 C17 C4 C1 ACTIVE BIAS CIRCUIT 6 7 8 9 R1 10 C2 C3 13 11 12 R2 VBIAS C14 C9 Note: Component number C7 is not used. Z1 0.143 x 0.022 Microstrip Figure 3. MMZ25333BT1 Test Circuit Schematic Table 6. MMZ25333BT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C4, C5 22 pF Chip Capacitors 04023J220BBS AVX C2 2 pF Chip Capacitor 04023J2R0BBS AVX C3 1.5 pF Chip Capacitor 04023J1R5BBS AVX C6 7.5 pF Chip Capacitor 04023J7R5BBS AVX C8 Component Not Placed C9, C11, C12, C13 1000 pF Chip Capacitors GCM155R71E103KA37 Murata C10 470 pF Chip Capacitor GRM1555C1H471JA01 Murata C14, C16 1 F Chip Capacitors GRM188R61A105KE15 Murata C15 0.01 F Chip Capacitor C0603C103J5RAC Kemet C17 4.7 F Chip Capacitor GRM188R60J475KE19 Murata C18 2.2 pF Chip Capacitor 04023J12R2BBS AVX L1 56 nH Chip Inductor 0603HC-56NX Coilcraft L2 10 nH Chip Inductor 0603HC-10NX Coilcraft L3 6.8 nH Chip Inductor 0603HC-6N8X Coilcraft L4 Component Not Placed R1 (ICQ = 265 mA) 1.8 k, 1/16 W Chip Resistor CR05-182J-B Kyocera R2 (ICQ = 265 mA) 680 , 1/16 W Chip Resistor CR05-681J-B Kyocera R1 (ICQ = 450 mA) 1.2 k, 1/16 W Chip Resistor CR05-122J-B Kyocera R2 (ICQ = 450 mA) 330 , 1/16 W Chip Resistor CR05-331J-B Kyocera R3 27 , 1/10 W Chip Resistor CR10-270J-T Kyocera M70506 MTL PCB Rogers RO4350B, 0.010, r = 3.66 Note: Component numbers C8 and L4 are labeled on board but not placed. MMZ25333BT1 4 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 2500–2700 MHz VCC3 VDECT C12 L4* C15 C11 RFIN VCC2 VCC1 C16 R3 L2 C18 L1 C10 C17 C6 C13 L3 RFOUT C5 C9 C1 R1 R2 C8* C2 C3 C4 C14 QFN 4x4--24E Rev. 1 M70506 VBIAS(1) PCB actual size: 1.3  1.46. (1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device]. Note: Component number C7 is not used. Component numbers C8* and L4* are labeled on board but not placed. Figure 4. MMZ25333BT1 Test Circuit Component Layout Table 6. MMZ25333BT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C4, C5 22 pF Chip Capacitors 04023J220BBS AVX C2 2 pF Chip Capacitor 04023J2R0BBS AVX C3 1.5 pF Chip Capacitor 04023J1R5BBS AVX C6 7.5 pF Chip Capacitor 04023J7R5BBS AVX C8 Component Not Placed C9, C11, C12, C13 1000 pF Chip Capacitors GCM155R71E103KA37 Murata C10 470 pF Chip Capacitor GRM1555C1H471JA01 Murata C14, C16 1 F Chip Capacitors GRM188R61A105KE15 Murata C15 0.01 F Chip Capacitor C0603C103J5RAC Kemet C17 4.7 F Chip Capacitor GRM188R60J475KE19 Murata C18 2.2 pF Chip Capacitor 04023J12R2BBS AVX L1 56 nH Chip Inductor 0603HC-56NX Coilcraft L2 10 nH Chip Inductor 0603HC-10NX Coilcraft L3 6.8 nH Chip Inductor 0603HC-6N8X Coilcraft L4 Component Not Placed R1 (ICQ = 265 mA) 1.8 k, 1/16 W Chip Resistor CR05-182J-B Kyocera R2 (ICQ = 265 mA) 680 , 1/16 W Chip Resistor CR05-681J-B Kyocera R1 (ICQ = 450 mA) 1.2 k, 1/16 W Chip Resistor CR05-122J-B Kyocera R2 (ICQ = 450 mA) 330 , 1/16 W Chip Resistor CR05-331J-B Kyocera R3 27 , 1/10 W Chip Resistor CR10-270J-T Kyocera PCB Rogers RO4350B, 0.010, r = 3.66 M70506 (Test Circuit Component Designations and Values table repeated for reference.) MTL MMZ25333BT1 RF Device Data Freescale Semiconductor, Inc. 5 --2 50 --6 48 --10 46 85C --14 --18 S21 (dB) S11 (dB) 50 OHM TYPICAL CHARACTERISTICS: 2500–2700 MHz, ICQ = 265 mA 25C --40C VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc ICQ = 265 mA --26 --30 2400 44 2480 2560 2640 2720 38 2800 25C 42 40 --22 --40C 36 2400 85C VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc ICQ = 265 mA 2480 2560 2640 2720 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 5. S11 versus Frequency versus Temperature Figure 6. S21 versus Frequency versus Temperature 2800 0 --2 --40C S22 (dB) --4 --6 25C --8 --10 85C --12 --14 2400 VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc ICQ = 265 mA 2480 2560 2640 2720 2800 f, FREQUENCY (MHz) Figure 7. S22 versus Frequency versus Temperature MMZ25333BT1 6 RF Device Data Freescale Semiconductor, Inc. 50 OHM TYPICAL CHARACTERISTICS: 2500–2700 MHz, ICQ = 265 mA --33 VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc ICQ = 265 mA, f = 2600 MHz Single--Carrier W--CDMA 3GPP TM1 Unclipped --36 --39 ACPR (dBc) --42 --45 85C --48 --40C --51 25C --54 --57 --60 --63 10 12 14 16 20 18 22 24 Pout, OUTPUT POWER (dBm) Figure 8. ACPR versus Output Power versus Temperature 50 VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc ICQ = 265 mA, f = 2600 MHz Single--Carrier W--CDMA 3GPP TM1 Unclipped 270 240 48 210 25C 180 --40C 150 120 90 85C 25C --40C 60 ICC2 85C 0 12 14 16 20 18 22 25C 42 40 85C 38 36 VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc ICQ = 265 mA, f = 2600 MHz Single--Carrier W--CDMA 3GPP TM1 Unclipped 32 Minimal Temperature Variation 10 44 34 ICC1 30 --40C 46 ICC3 Gps, POWER GAIN (dB) ICC, COLLECTOR CURRENT (mA) 300 30 24 10 12 14 16 18 20 22 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 9. Stage Collector Current versus Output Power versus Temperature Figure 10. Power Gain versus Output Power versus Temperature 24 2 VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc ICQ = 265 mA, f = 2600 MHz Single--Carrier W--CDMA 3GPP TM1 Unclipped PDET, POWER DETECTOR (V) 1.8 1.6 1.4 1.2 1 25C 0.8 85C 0.6 --40C 0.4 0.2 0 10 12 14 16 18 20 22 24 Pout, OUTPUT POWER (dBm) Figure 11. Power Detector versus Output Power versus Temperature MMZ25333BT1 RF Device Data Freescale Semiconductor, Inc. 7 --6 46 --8 45 --10 44 --12 43 S21 (dB) S11 (dB) 50 OHM TYPICAL CHARACTERISTICS: 2500–2700 MHz, ICQ = 450 mA --14 42 41 --16 VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc ICQ = 450 mA --18 --20 2400 2480 2560 2640 2720 40 2800 39 2400 VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc ICQ = 450 mA 2480 2560 2640 2720 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 12. S11 versus Frequency Figure 13. S21 versus Frequency 2800 0 --2 S22 (dB) --4 --6 --8 --10 --12 --14 2400 VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc ICQ = 450 mA 2480 2560 2640 2720 2800 f, FREQUENCY (MHz) Figure 14. S22 versus Frequency MMZ25333BT1 8 RF Device Data Freescale Semiconductor, Inc. 50 OHM TYPICAL CHARACTERISTICS: 2500–2700 MHz, ICQ = 450 mA --33 VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc ICQ = 450 mA, f = 2600 MHz Single--Carrier W--CDMA 3GPP TM1 Unclipped --36 --39 ACPR (dBc) --42 --45 --48 --51 --54 --57 --60 --63 10 12 14 16 18 20 22 26 24 Pout, OUTPUT POWER (dBm) Figure 15. ACPR versus Output Power 50 VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc ICQ = 450 mA, f = 2600 MHz Single--Carrier W--CDMA 3GPP TM1 Unclipped 450 400 48 46 Gps, POWER GAIN (dB) ICC, COLLECTOR CURRENT (mA) 500 ICC3 350 300 250 200 150 ICC2 100 0 10 12 14 16 18 20 42 40 38 36 VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc ICQ = 450 mA, f = 2600 MHz Single--Carrier W--CDMA 3GPP TM1 Unclipped 34 ICC1 50 44 32 22 24 30 26 10 12 14 16 18 20 22 24 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 16. Stage Collector Current versus Output Power Figure 17. Power Gain versus Output Power 26 2 VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc ICQ = 450 mA, f = 2600 MHz Single--Carrier W--CDMA 3GPP TM1 Unclipped PDET, POWER DETECTOR (V) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 10 12 14 16 18 20 22 24 26 Pout, OUTPUT POWER (dBm) Figure 18. Power Detector versus Output Power MMZ25333BT1 RF Device Data Freescale Semiconductor, Inc. 9 50 OHM APPLICATION CIRCUIT: 2110–2170 MHz, ICQ = 265 mA VCC2 VCC1 R3 C11 C10 C12 L1 C15 PDET L2 C18 C16 C6 C5 L3 24 RF INPUT 23 22 21 20 VCC3 19 1 18 2 17 3 16 C13 RF OUTPUT Z1 4 15 5 14 C17 C4 C1 ACTIVE BIAS CIRCUIT 6 7 8 9 R1 10 C3 13 11 12 R2 VBIAS C14 C9 Note: Component number C7 is not used. Z1 0.163 x 0.022 Microstrip Figure 19. MMZ25333BT1 Test Circuit Schematic Table 7. MMZ25333BT1 Test Circuit Component Designations and Values Part Description C1, C4, C5 22 pF Chip Capacitors C2 Component Not Placed C3 C6 C8 Component Not Placed C9, C11, C12, C13 C10 Part Number Manufacturer 04023J220BBS AVX 3.6 pF Chip Capacitor 04023J3R6BBS AVX 8.2 pF Chip Capacitor 04023J8R2BBS AVX 1000 pF Chip Capacitors GCM155R71E103KA37 Murata 470 pF Chip Capacitor GRM1555C1H471JA01 Murata C14, C16 1 F Chip Capacitors GRM188R61A105KE15 Murata C15 0.01 F Chip Capacitor C0603C103J5RAC Kemet C17 4.7 F Chip Capacitor GRM188R60J475KE19 Murata C18 2.2 pF Chip Capacitor 04023J12R2BBS AVX L1 56 nH Chip Inductor 0603HC-56NX Coilcraft L2 12 nH Chip Inductor 0603HC-12NX Coilcraft L3 6.8 nH Chip Inductor 0603HC-6N8X Coilcraft L4 Component Not Placed R1 (ICQ = 265 mA) 1.8 k, 1/16 W Chip Resistor CR05-182J-B Kyocera R2 (ICQ = 265 mA) 680 , 1/16 W Chip Resistor CR05-681J-B Kyocera R3 27 , 1/10 W Chip Resistor CR10-270J-T Kyocera M70506 MTL PCB Rogers RO4350B, 0.010, r = 3.66 Note: Component numbers C2, C8 and L4 are labeled on board but not placed. MMZ25333BT1 10 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 2110–2170 MHz, ICQ = 265 mA C12 L4* C10 C17 C13 L2 C6 C18 L1 VCC3 C16 VDECT VCC2 VCC1 RFIN R3 C15 C11 L3 RFOUT C5 C2* C9 C1 C3 C8* R1 R2 C4 C14 QFN 4x4--24E Rev. 1 M70506 VBIAS(1) PCB actual size: 1.3  1.46. (1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device]. Note: Component number C7 is not used. Component numbers C2*, C8* and L4* are labeled on board but not placed. Figure 20. MMZ25333BT1 Test Circuit Component Layout Table 7. MMZ25333BT1 Test Circuit Component Designations and Values C1, C4, C5 Part Description 22 pF Chip Capacitors Part Number 04023J220BBS Manufacturer AVX C2 Component Not Placed C3 3.6 pF Chip Capacitor 04023J3R6BBS AVX C6 C8 C9, C11, C12, C13 C10 C14, C16 C15 C17 C18 L1 L2 L3 L4 R1 (ICQ = 265 mA) R2 (ICQ = 265 mA) R3 PCB 8.2 pF Chip Capacitor Component Not Placed 1000 pF Chip Capacitors 470 pF Chip Capacitor 1 F Chip Capacitors 0.01 F Chip Capacitor 4.7 F Chip Capacitor 2.2 pF Chip Capacitor 56 nH Chip Inductor 12 nH Chip Inductor 6.8 nH Chip Inductor Component Not Placed 1.8 k, 1/16 W Chip Resistor 680 , 1/16 W Chip Resistor 27 , 1/10 W Chip Resistor Rogers RO4350B, 0.010, r = 3.66 04023J8R2BBS AVX GCM155R71E103KA37 GRM1555C1H471JA01 GRM188R61A105KE15 C0603C103J5RAC GRM188R60J475KE19 04023J12R2BBS 0603HC-56NX 0603HC-12NX 0603HC-6N8X Murata Murata Murata Kemet Murata AVX Coilcraft Coilcraft Coilcraft CR05-182J-B CR05-681J-B CR10-270J-T M70506 Kyocera Kyocera Kyocera MTL (Test Circuit Component Designations and Values table repeated for reference.) MMZ25333BT1 RF Device Data Freescale Semiconductor, Inc. 11 --8 46 --11 45 --14 44 --17 43 S21 (dB) S11 (dB) 50 OHM TYPICAL CHARACTERISTICS: 2110–2170 MHz, ICQ = 265 mA --20 42 41 --23 --26 40 VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc ICQ = 265 mA --29 1900 1980 2060 2140 2220 VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc ICQ = 265 mA 39 2300 1900 1980 2060 2140 2220 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 21. S11 versus Frequency Figure 22. S21 versus Frequency 2300 --4 --6 S22 (dB) --8 --10 --12 --14 --16 VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc ICQ = 265 mA --18 1900 1980 2060 2140 2220 2300 f, FREQUENCY (MHz) Figure 23. S22 versus Frequency MMZ25333BT1 12 RF Device Data Freescale Semiconductor, Inc. 50 OHM TYPICAL CHARACTERISTICS: 2110–2170 MHz, ICQ = 265 mA --33 VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc ICQ = 265 mA, f = 2140 MHz Single--Carrier W--CDMA 3GPP TM1 Unclipped --36 --39 ACPR (dBc) --42 --45 --48 --51 --54 --57 --60 --63 10 12 14 16 20 18 22 24 Pout, OUTPUT POWER (dBm) Figure 24. ACPR versus Output Power 50 VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc ICQ = 265 mA, f = 2140 MHz Single--Carrier W--CDMA 3GPP TM1 Unclipped 270 240 46 ICC3 210 180 150 120 ICC2 90 60 10 12 14 16 20 18 22 44 42 40 38 36 34 ICC1 30 0 VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc ICQ = 265 mA, f = 2140 MHz Single--Carrier W--CDMA 3GPP TM1 Unclipped 48 Gps, POWER GAIN (dB) ICC, COLLECTOR CURRENT (mA) 300 32 30 24 10 12 14 16 18 20 22 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 25. Stage Collector Current versus Output Power Figure 26. Power Gain versus Output Power 24 2 VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc ICQ = 265 mA, f = 2140 MHz Single--Carrier W--CDMA 3GPP TM1 Unclipped PDET, POWER DETECTOR (V) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 10 12 14 16 18 20 22 24 Pout, OUTPUT POWER (dBm) Figure 27. Power Detector versus Output Power MMZ25333BT1 RF Device Data Freescale Semiconductor, Inc. 13 0.50 3.00 4.40 0.30 Solder pad with thermal via structure. All dimensions in mm. Figure 28. PCB Pad Layout for QFN 4  4 MA12 WLYW Figure 29. Product Marking MMZ25333BT1 14 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS MMZ25333BT1 RF Device Data Freescale Semiconductor, Inc. 15 MMZ25333BT1 16 RF Device Data Freescale Semiconductor, Inc. MMZ25333BT1 RF Device Data Freescale Semiconductor, Inc. 17 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes  AN1955: Thermal Measurement Methodology of RF Power Amplifiers Software  .s2p File Development Tools  Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. FAILURE ANALYSIS At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third party vendors with moderate success. For updates contact your local Freescale Sales Office. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 June 2014  Initial Release of Data Sheet 1 Aug. 2014  Table 1, Maximum Ratings: updated Junction Temperature from 150C to 175C to reflect recent test results of the device, p. 2 MMZ25333BT1 18 RF Device Data Freescale Semiconductor, Inc. How to Reach Us: Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Home Page: freescale.com Web Support: freescale.com/support Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2014 Freescale Semiconductor, Inc. MMZ25333BT1 Document Number: RF Device DataMMZ25333B Rev. 1, 8/2014Semiconductor, Freescale Inc. 19