MPC8541PXAQF

Freescale Semiconductor MPC8541EEC Rev. 4.2, 1/2008 Technical Data MPC8541E PowerQUICC™ III Integrated Communications Processor Hardware Specification The MPC8541E integrates a PowerPC™ processor core built on Power Architecture™ technology with system logic required for networking, telecommunications, and wireless infrastructure applications. The MPC8541E is a member of the PowerQUICC™ III family of devices that combine system-level support for industry-standard interfaces with processors that implement the embedded category of the Power Architecture technology. For functional characteristics of the processor, refer to the MPC8555E PowerQUICC™ III Integrated Communications Processor Reference Manual. To locate any published errata or updates for this document refer to http://www.freescale.com or contact your Freescale sales office. © Freescale Semiconductor, Inc., 2008. All rights reserved. 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. Contents Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 7 Power Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 12 Clock Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 RESET Initialization . . . . . . . . . . . . . . . . . . . . . . . . . . 15 DDR SDRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 DUART . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Ethernet: Three-Speed, MII Management . . . . . . . . . . 21 Local Bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 CPM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 JTAG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 I2C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 PCI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 Package and Pin Listings . . . . . . . . . . . . . . . . . . . . . . . 54 Clocking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64 Thermal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67 System Design Information . . . . . . . . . . . . . . . . . . . . . 76 Document Revision History . . . . . . . . . . . . . . . . . . . . 83 Device Nomenclature . . . . . . . . . . . . . . . . . . . . . . . . . 84 Overview 1 Overview The following section provides a high-level overview of the MPC8541E features. Figure 1 shows the major functional units within the MPC8541E. . DDR SDRAM DDR SDRAM Controller I2C Controller DUART GPIO 32b Local Bus Controller IRQs Programmable Interrupt Controller CPM FCC FCC I/Os e500 Coherency Module Serial DMA 256 Kbyte L2 Cache/ SRAM Core Complex Bus e500 Core 32-Kbyte L1 I Cache 32-Kbyte L1 D Cache 64/32b PCI Controller OCeaN ROM 0/32b PCI Controller I-Memory Serial Interfaces MIIs/RMIIs Security Engine DMA Controller DPRAM SPI I2C RISC Engine 10/100/1000 MAC Parallel I/O Baud Rate Generators 10/100/1000 MAC MII, GMII, TBI, RTBI, RGMIIs Timers CPM Interrupt Controller Figure 1. MPC8541E Block Diagram 1.1 Key Features The following lists an overview of the MPC8541E feature set. • Embedded e500 Book E-compatible core — High-performance, 32-bit Book E-enhanced core that implements the PowerPC architecture — Dual-issue superscalar, 7-stage pipeline design — 32-Kbyte L1 instruction cache and 32-Kbyte L1 data cache with parity protection — Lockable L1 caches—entire cache or on a per-line basis — Separate locking for instructions and data — Single-precision floating-point operations — Memory management unit especially designed for embedded applications — Enhanced hardware and software debug support — Dynamic power management — Performance monitor facility MPC8541E PowerQUICC™ III Integrated Communications Processor Hardware Specification, Rev. 4.2 2 Freescale Semiconductor Overview • • • Security Engine is optimized to handle all the algorithms associated with IPSec, SSL/TLS, SRTP, IEEE Std 802.11i™, iSCSI, and IKE processing. The Security Engine contains 4 Crypto-channels, a Controller, and a set of crypto Execution Units (EUs). The Execution Units are: — Public Key Execution Unit (PKEU) supporting the following: – RSA and Diffie-Hellman – Programmable field size up to 2048-bits – Elliptic curve cryptography – F2m and F(p) modes – Programmable field size up to 511-bits — Data Encryption Standard Execution Unit (DEU) – DES, 3DES – Two key (K1, K2) or Three Key (K1, K2, K3) – ECB and CBC modes for both DES and 3DES — Advanced Encryption Standard Unit (AESU) – Implements the Rinjdael symmetric key cipher – Key lengths of 128, 192, and 256 bits.Two key – ECB, CBC, CCM, and Counter modes — ARC Four execution unit (AFEU) – Implements a stream cipher compatible with the RC4 algorithm – 40- to 128-bit programmable key — Message Digest Execution Unit (MDEU) – SHA with 160-bit or 256-bit message digest – MD5 with 128-bit message digest – HMAC with either algorithm — Random Number Generator (RNG) — 4 Crypto-channels, each supporting multi-command descriptor chains – Static and/or dynamic assignment of crypto-execution units via an integrated controller – Buffer size of 256 Bytes for each execution unit, with flow control for large data sizes High-performance RISC CPM — Two full-duplex fast communications controllers (FCCs) that support the following protocol: – IEEE Std 802.3™/Fast Ethernet (10/100) — Serial peripheral interface (SPI) support for master or slave — I2C bus controller — General-purpose parallel ports—16 parallel I/O lines with interrupt capability 256 Kbytes of on-chip memory — Can act as a 256-Kbyte level-2 cache — Can act as a 256-Kbyte or two 128-Kbyte memory-mapped SRAM arrays — Can be partitioned into 128-Kbyte L2 cache plus 128-Kbyte SRAM — Full ECC support on 64-bit boundary in both cache and SRAM modes MPC8541E PowerQUICC™ III Integrated Communications Processor Hardware Specification, Rev. 4.2 Freescale Semiconductor 3 Overview • • • — SRAM operation supports relocation and is byte-accessible — Cache mode supports instruction caching, data caching, or both — External masters can force data to be allocated into the cache through programmed memory ranges or special transaction types (stashing). — Eight-way set-associative cache organization (1024 sets of 32-byte cache lines) — Supports locking the entire cache or selected lines – Individual line locks set and cleared through Book E instructions or by externally mastered transactions — Global locking and flash clearing done through writes to L2 configuration registers — Instruction and data locks can be flash cleared separately — Read and write buffering for internal bus accesses Address translation and mapping unit (ATMU) — Eight local access windows define mapping within local 32-bit address space — Inbound and outbound ATMUs map to larger external address spaces – Three inbound windows plus a configuration window on PCI – Four inbound windows – Four outbound windows plus default translation for PCI DDR memory controller — Programmable timing supporting first generation DDR SDRAM — 64-bit data interface, up to MHz data rate — Four banks of memory supported, each up to 1 Gbyte — DRAM chip configurations from 64 Mbits to 1 Gbit with x8/x16 data ports — Full ECC support — Page mode support (up to 16 simultaneous open pages) — Contiguous or discontiguous memory mapping — Sleep mode support for self refresh DDR SDRAM — Supports auto refreshing — On-the-fly power management using CKE signal — Registered DIMM support — Fast memory access via JTAG port — 2.5-V SSTL2 compatible I/O Programmable interrupt controller (PIC) — Programming model is compliant with the OpenPIC architecture — Supports 16 programmable interrupt and processor task priority levels — Supports 12 discrete external interrupts — Supports 4 message interrupts with 32-bit messages — Supports connection of an external interrupt controller such as the 8259 programmable interrupt controller MPC8541E PowerQUICC™ III Integrated Communications Processor Hardware Specification, Rev. 4.2 4 Freescale Semiconductor Overview • • • • • — Four global high resolution timers/counters that can generate interrupts — Supports additional internal interrupt sources — Supports fully nested interrupt delivery — Interrupts can be routed to external pin for external processing — Interrupts can be routed to the e500 core’s standard or critical interrupt inputs — Interrupt summary registers allow fast identification of interrupt source Two I2C controllers (one is contained within the CPM, the other is a stand-alone controller which is not part of the CPM) — Two-wire interface — Multiple master support — Master or slave I2C mode support — On-chip digital filtering rejects spikes on the bus Boot sequencer — Optionally loads configuration data from serial ROM at reset via the stand-alone I2C interface — Can be used to initialize configuration registers and/or memory — Supports extended I2C addressing mode — Data integrity checked with preamble signature and CRC DUART — Two 4-wire interfaces (RXD, TXD, RTS, CTS) — Programming model compatible with the original 16450 UART and the PC16550D Local bus controller (LBC) — Multiplexed 32-bit address and data operating at up to 166 MHz — Eight chip selects support eight external slaves — Up to eight-beat burst transfers — The 32-, 16-, and 8-bit port sizes are controlled by an on-chip memory controller — Three protocol engines available on a per chip select basis: – General purpose chip select machine (GPCM) – Three user programmable machines (UPMs) – Dedicated single data rate SDRAM controller — Parity support — Default boot ROM chip select with configurable bus width (8-, 16-, or 32-bit) Two Three-speed (10/100/1000)Ethernet controllers (TSECs) — Dual IEEE 802.3, 802.3u, 802.3x, 802.3z AC compliant controllers — Support for Ethernet physical interfaces: – 10/100/1000 Mbps IEEE 802.3 GMII – 10/100 Mbps IEEE 802.3 MII – 10 Mbps IEEE 802.3 MII MPC8541E PowerQUICC™ III Integrated Communications Processor Hardware Specification, Rev. 4.2 Freescale Semiconductor 5 Overview • • – 1000 Mbps IEEE 802.3z TBI – 10/100/1000 Mbps RGMII/RTBI — Full- and half-duplex support — Buffer descriptors are backwards compatible with MPC8260 and MPC860T 10/100 programming models — 9.6-Kbyte jumbo frame support — RMON statistics support — 2-Kbyte internal transmit and receive FIFOs — MII management interface for control and status — Programmable CRC generation and checking OCeaN switch fabric — Three-port crossbar packet switch — Reorders packets from a source based on priorities — Reorders packets to bypass blocked packets — Implements starvation avoidance algorithms — Supports packets with payloads of up to 256 bytes Integrated DMA controller — Four-channel controller — All channels accessible by both local and remote masters — Extended DMA functions (advanced chaining and striding capability) • — Support for scatter and gather transfers — Misaligned transfer capability — Interrupt on completed segment, link, list, and error — Supports transfers to or from any local memory or I/O port — Selectable hardware-enforced coherency (snoop/no-snoop) — Ability to start and flow control each DMA channel from external 3-pin interface — Ability to launch DMA from single write transaction PCI Controllers — PCI 2.2 compatible — One 64-bit or two 32-bit PCI ports supported at 16 to 66 MHz — Host and agent mode support, 64-bit PCI port can be host or agent, if two 32-bit ports, only one can be an agent — 64-bit dual address cycle (DAC) support — Supports PCI-to-memory and memory-to-PCI streaming — Memory prefetching of PCI read accesses — Supports posting of processor-to-PCI and PCI-to-memory writes — PCI 3.3-V compatible MPC8541E PowerQUICC™ III Integrated Communications Processor Hardware Specification, Rev. 4.2 6 Freescale Semiconductor Electrical Characteristics • • — Selectable hardware-enforced coherency — Selectable clock source (SYSCLK or independent PCI_CLK) Power management — Fully static 1.2-V CMOS design with 3.3- and 2.5-V I/O — Supports power save modes: doze, nap, and sleep — Employs dynamic power management — Selectable clock source (sysclk or independent PCI_CLK) System performance monitor — Supports eight 32-bit counters that count the occurrence of selected events — Ability to count up to 512 counter specific events — Supports 64 reference events that can be counted on any of the 8 counters — Supports duration and quantity threshold counting • • • 2 — Burstiness feature that permits counting of burst events with a programmable time between bursts — Triggering and chaining capability — Ability to generate an interrupt on overflow System access port — Uses JTAG interface and a TAP controller to access entire system memory map — Supports 32-bit accesses to configuration registers — Supports cache-line burst accesses to main memory — Supports large block (4-Kbyte) uploads and downloads — Supports continuous bit streaming of entire block for fast upload and download IEEE Std 1149.1™-compatible, JTAG boundary scan 783 FC-PBGA package Electrical Characteristics This section provides the AC and DC electrical specifications and thermal characteristics for the MPC8541E. The MPC8541E is currently targeted to these specifications. Some of these specifications are independent of the I/O cell, but are included for a more complete reference. These are not purely I/O buffer design specifications. 2.1 Overall DC Electrical Characteristics This section covers the ratings, conditions, and other characteristics. MPC8541E PowerQUICC™ III Integrated Communications Processor Hardware Specification, Rev. 4.2 Freescale Semiconductor 7 Electrical Characteristics 2.1.1 Absolute Maximum Ratings Table 1 provides the absolute maximum ratings. Table 1. Absolute Maximum Ratings 1 Characteristic Symbol Max Value Unit Core supply voltage VDD –0.3 to 1.32 0.3 to 1.43 (for 1 GHz only) V PLL supply voltage AV DD –0.3 to 1.32 0.3 to 1.43 (for 1 GHz only) V DDR DRAM I/O voltage GVDD –0.3 to 3.63 V Three-speed Ethernet I/O, MII management voltage LVDD –0.3 to 3.63 –0.3 to 2.75 V CPM, PCI, local bus, DUART, system control and power management, I2C, and JTAG I/O voltage OVDD –0.3 to 3.63 V 3 Input voltage MV IN –0.3 to (GVDD + 0.3) V 2, 5 MV REF –0.3 to (GVDD + 0.3) V 2, 5 Three-speed Ethernet signals LVIN –0.3 to (LVDD + 0.3) V 4, 5 CPM, Local bus, DUART, SYSCLK, system control and power management, I2C, and JTAG signals OV IN –0.3 to (OVDD + 0.3)1 V 5 PCI OV IN –0.3 to (OVDD + 0.3) V 6 TSTG –55 to 150 °C DDR DRAM signals DDR DRAM reference Storage temperature range Notes Notes: 1. Functional and tested operating conditions are given in Table 2. Absolute maximum ratings are stress ratings only, and functional operation at the maximums is not guaranteed. Stresses beyond those listed may affect device reliability or cause permanent damage to the device. 2. Caution: MVIN must not exceed GV DD by more than 0.3 V. This limit may be exceeded for a maximum of 20 ms during power-on reset and power-down sequences. 3. Caution: OVIN must not exceed OVDD by more than 0.3 V. This limit may be exceeded for a maximum of 20 ms during power-on reset and power-down sequences. 4. Caution: LVIN must not exceed LV DD by more than 0.3 V. This limit may be exceeded for a maximum of 20 ms during power-on reset and power-down sequences. 5. (M,L,O)VIN and MVREF may overshoot/undershoot to a voltage and for a maximum duration as shown in Figure 2. 6. OV IN on the PCI interface may overshoot/undershoot according to the PCI Electrical Specification for 3.3-V operation, as shown in Figure 3. 2.1.2 Power Sequencing The MPC8541Erequires its power rails to be applied in a specific sequence in order to ensure proper device operation. These requirements are as follows for power up: 1. VDD, AVDDn 2. GVDD, LVDD, OVDD (I/O supplies) MPC8541E PowerQUICC™ III Integrated Communications Processor Hardware Specification, Rev. 4.2 8 Freescale Semiconductor Electrical Characteristics Items on the same line have no ordering requirement with respect to one another. Items on separate lines must be ordered sequentially such that voltage rails on a previous step must reach 90 percent of their value before the voltage rails on the current step reach ten percent of theirs. NOTE If the items on line 2 must precede items on line 1, please ensure that the delay does not exceed 500 ms and the power sequence is not done greater than once per day in production environment. NOTE From a system standpoint, if the I/O power supplies ramp prior to the VDD core supply, the I/Os on the MPC8541E may drive a logic one or zero during power-up. 2.1.3 Recommended Operating Conditions Table 2 provides the recommended operating conditions for the MPC8541E. Note that the values in Table 2 are the recommended and tested operating conditions. Proper device operation outside of these conditions is not guaranteed. Table 2. Recommended Operating Conditions Characteristic Symbol Recommended Value Unit Core supply voltage VDD 1.2 V ± 60 mV 1.3 V± 50 mV (for 1 GHz only) V PLL supply voltage AVDD 1.2 V ± 60 mV 1.3 V ± 50 mV (for 1 GHz only) V DDR DRAM I/O voltage GV DD 2.5 V ± 125 mV V Three-speed Ethernet I/O voltage LVDD 3.3 V ± 165 mV 2.5 V ± 125 mV V PCI, local bus, DUART, system control and power management, I2C, and JTAG I/O voltage OV DD 3.3 V ± 165 mV V Input voltage MVIN GND to GVDD V MVREF GND to GVDD V Three-speed Ethernet signals LVIN GND to LVDD V PCI, local bus, DUART, SYSCLK, system control and power management, I2C, and JTAG signals OVIN GND to OV DD V Tj 0 to 105 °C DDR DRAM signals DDR DRAM reference Die-junction Temperature MPC8541E PowerQUICC™ III Integrated Communications Processor Hardware Specification, Rev. 4.2 Freescale Semiconductor 9 Electrical Characteristics Figure 2 shows the undershoot and overshoot voltages at the interfaces of the MPC8541E. G/L/OVDD + 20% G/L/OVDD + 5% VIH G/L/OVDD GND GND – 0.3 V VIL GND – 0.7 V Not to Exceed 10% of tSYS1 Note: 1. Note that tSYS refers to the clock period associated with the SYSCLK signal. Figure 2. Overshoot/Undershoot Voltage for GVDD/OVDD/LVDD The MPC8541E core voltage must always be provided at nominal 1.2 V (see Table 2 for actual recommended core voltage). Voltage to the processor interface I/Os are provided through separate sets of supply pins and must be provided at the voltages shown in Table 2. The input voltage threshold scales with respect to the associated I/O supply voltage. OVDD and LVDD based receivers are simple CMOS I/O circuits and satisfy appropriate LVCMOS type specifications. The DDR SDRAM interface uses a single-ended differential receiver referenced the externally supplied MVREF signal (nominally set to GVDD/2) as is appropriate for the SSTL2 electrical signaling standard. MPC8541E PowerQUICC™ III Integrated Communications Processor Hardware Specification, Rev. 4.2 10 Freescale Semiconductor Electrical Characteristics Figure 3 shows the undershoot and overshoot voltage of the PCI interface of the MPC8541E for the 3.3-V signals, respectively. 11 ns (Min) +7.1 V Overvoltage Waveform 7.1 V p-to-p (Min) 4 ns (Max) 0V 4 ns (Max) 62.5 ns +3.6 V 7.1 V p-to-p (Min) Undervoltage Waveform –3.5 V Figure 3. Maximum AC Waveforms on PCI interface for 3.3-V Signaling 2.1.4 Output Driver Characteristics Table 3 provides information on the characteristics of the output driver strengths. The values are preliminary estimates. Table 3. Output Drive Capability Driver Type Local bus interface utilities signals Programmable Output Impedance (Ω) Supply Voltage Notes 25 OV DD = 3.3 V 1 42 (default) PCI signals 25 2 42 (default) DDR signal 20 GV DD = 2.5 V TSEC/10/100 signals 42 LVDD = 2.5/3.3 V DUART, system control, I2C, JTAG 42 OV DD = 3.3 V Notes: 1. The drive strength of the local bus interface is determined by the configuration of the appropriate bits in PORIMPSCR. 2. The drive strength of the PCI interface is determined by the setting of the PCI_GNT1 signal at reset. MPC8541E PowerQUICC™ III Integrated Communications Processor Hardware Specification, Rev. 4.2 Freescale Semiconductor 11 Power Characteristics 3 Power Characteristics The estimated typical power dissipation for this family of PowerQUICC III devices is shown in Table 4. Table 4. Power Dissipation(1) (2) CCB Frequency (MHz) Core Frequency (MHz) VDD Typical Power(3)(4) (W) Maximum Power(5) (W) 200 400 1.2 4.4 6.1 500 1.2 4.7 6.5 600 1.2 5.0 6.8 533 1.2 4.9 6.7 667 1.2 5.4 7.2 800 1.2 5.8 8.6 667 1.2 5.5 7.4 833 1.2 6.0 8.8 1000(6) 1.3 9.0 12.2 267 333 Notes: 1. The values do not include I/O supply power (OVDD, LVDD, GVDD) or AVDD. 2. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal resistance. Any customer design must take these considerations into account to ensure the maximum 105 degrees junction temperature is not exceeded on this device. 3. Typical power is based on a nominal voltage of VDD = 1.2V, a nominal process, a junction temperature of Tj = 105° C, and a Dhrystone 2.1 benchmark application. 4. Thermal solutions likely need to design to a value higher than Typical Power based on the end application, TA target, and I/O power 5. Maximum power is based on a nominal voltage of VDD = 1.2V, worst case process, a junction temperature of Tj = 105° C, and an artificial smoke test. 6. The nominal recommended VDD = 1.3V for this speed grade. Notes: 1. 2. 3. 4. 5. 6. MPC8541E PowerQUICC™ III Integrated Communications Processor Hardware Specification, Rev. 4.2 12 Freescale Semiconductor Power Characteristics Table 5. Typical I/O Power Dissipation Interface DDR I/O PCI I/O Local Bus I/O TSEC I/O CPM - FCC Parameters GV DD (2.5 V) OVDD (3.3 V) LVDD (3.3 V) LVDD (2.5 V) Unit Comments CCB = 200 MHz 0.46 — — — W — CCB = 266 MHz 0.59 — — — W — CCB = 300 MHz 0.66 — — — W — CCB = 333 MHz 0.73 — — — W — 64b, 66 MHz — 0.14 — — W — 64b, 33 MHz — 0.08 — — W — 32b, 66 MHz — 0.07 — — W Multiply by 2 if using two 32b ports 32b, 33 MHz — 0.04 — — W 32b, 167 MHz — 0.30 — — W — 32b, 133 MHz — 0.24 — — W — 32b, 83 MHz — 0.16 — — W — 32b, 66 MHz — 0.13 — — W — 32b, 33 MHz — 0.07 — — W — MII — — 0.01 — W GMII or TBI — — 0.07 — W RGMII or RTBI — — — 0.04 W MII — 0.015 — — W — RMII — 0.013 — — W — HDLC 16 Mbps — 0.009 — — W — Multiply by number of interfaces used. MPC8541E PowerQUICC™ III Integrated Communications Processor Hardware Specification, Rev. 4.2 Freescale Semiconductor 13 Clock Timing 4 4.1 Clock Timing System Clock Timing Table 6 provides the system clock (SYSCLK) AC timing specifications for the MPC8541E. Table 6. SYSCLK AC Timing Specifications Parameter/Condition Symbol Min Typical Max Unit Notes SYSCLK frequency fSYSCLK — — 166 MHz 1 SYSCLK cycle time tSYSCLK 6.0 — — ns — SYSCLK rise and fall time tKH, tKL 0.6 1.0 1.2 ns 2 tKHK/tSYSCLK 40 — 60 % 3 — — — +/- 150 ps 4, 5 SYSCLK duty cycle SYSCLK jitter Notes: 1. Caution: The CCB to SYSCLK ratio and e500 core to CCB ratio settings must be chosen such that the resulting SYSCLK frequency, e500 (core) frequency, and CCB frequency do not exceed their respective maximum or minimum operating frequencies. 2. Rise and fall times for SYSCLK are measured at 0.6 and 2.7 V. 3. Timing is guaranteed by design and characterization. 4. This represents the total input jitter—short term and long term—and is guaranteed by design. 5. For spread spectrum clocking, guidelines are ±1% of the input frequency with a maximum of 60 kHz of modulation regardless of the input frequency. 4.2 TSEC Gigabit Reference Clock Timing Table 7 provides the TSEC gigabit reference clock (EC_GTX_CLK125) AC timing specifications for the MPC8541E. Table 7. EC_GTX_CLK125 AC Timing Specifications Parameter/Condition Symbol Min Typical Max Unit Notes EC_GTX_CLK125 frequency fG125 — 125 — MHz — EC_GTX_CLK125 cycle time tG125 — 8 — ns — EC_GTX_CLK125 rise time tG125R — — 1.0 ns 1 EC_GTX_CLK125 fall time tG125F — — 1.0 ns 1 % 1, 2 tG125H/tG125 EC_GTX_CLK125 duty cycle GMII, TBI RGMII, RTBI — 45 47 55 53 Notes: 1. Timing is guaranteed by design and characterization. 2. EC_GTX_CLK125 is used to generate GTX clock for TSEC transmitter with 2% degradation. EC_GTX_CLK125 duty cycle can be loosened from 47/53% as long as PHY device can tolerate the duty cycle generated by GTX_CLK of TSEC. MPC8541E PowerQUICC™ III Integrated Communications Processor Hardware Specification, Rev. 4.2 14 Freescale Semiconductor RESET Initialization 4.3 Real Time Clock Timing Table 8 provides the real time clock (RTC) AC timing specifications. Table 8. RTC AC Timing Specifications Parameter/Condition Symbol Min Typical Max Unit Notes RTC clock high time tRTCH 2x tCCB_CLK — — ns — RTC clock low time tRTCL 2x tCCB_CLK — — ns — 5 RESET Initialization This section describes the AC electrical specifications for the RESET initialization timing requirements of the MPC8541E. Table 9 provides the RESET initialization AC timing specifications. Table 9. RESET Initialization Timing Specifications Parameter/Condition Min Max Unit Notes Required assertion time of HRESET 100 — μs — Minimum assertion time for SRESET 512 — SYSCLKs 1 PLL input setup time with stable SYSCLK before HRESET negation 100 — μs — Input setup time for POR configs (other than PLL config) with respect to negation of HRESET 4 — SYSCLKs 1 Input hold time for POR configs (including PLL config) with respect to negation of HRESET 2 — SYSCLKs 1 Maximum valid-to-high impedance time for actively driven POR configs with respect to negation of HRESET — 5 SYSCLKs 1 Notes: 1. SYSCLK is identical to the PCI_CLK signal and is the primary clock input for the MPC8541E. See the MPC8555E PowerQUICC™ III Integrated Communications Processor Reference Manual for more details. Table 10 provides the PLL and DLL lock times. Table 10. PLL and DLL Lock Times Parameter/Condition Min Max Unit Notes PLL lock times — 100 μs — DLL lock times 7680 122,880 CCB Clocks 1, 2 Notes: 1. DLL lock times are a function of the ratio between the output clock and the platform (or CCB) clock. A 2:1 ratio results in the minimum and an 8:1 ratio results in the maximum. 2. The CCB clock is determined by the SYSCLK × platform PLL ratio. MPC8541E PowerQUICC™ III Integrated Communications Processor Hardware Specification, Rev. 4.2 Freescale Semiconductor 15 DDR SDRAM 6 DDR SDRAM This section describes the DC and AC electrical specifications for the DDR SDRAM interface of the MPC8541E. 6.1 DDR SDRAM DC Electrical Characteristics Table 11 provides the recommended operating conditions for the DDR SDRAM component(s) of the MPC8541E. Table 11. DDR SDRAM DC Electrical Characteristics Parameter/Condition Symbol Min Max Unit Notes I/O supply voltage GV DD 2.375 2.625 V 1 I/O reference voltage MVREF 0.49 × GVDD 0.51 × GVDD V 2 I/O termination voltage VTT MVREF – 0.04 MVREF + 0.04 V 3 Input high voltage VIH MVREF + 0.18 GVDD + 0.3 V — Input low voltage VIL –0.3 MVREF – 0.18 V — Output leakage current IOZ –10 10 μA 4 Output high current (VOUT = 1.95 V) IOH –15.2 — mA — Output low current (VOUT = 0.35 V) IOL 15.2 — mA — IVREF — 5 μA — MVREF input leakage current Notes: 1. GVDD is expected to be within 50 mV of the DRAM GVDD at all times. 2. MVREF is expected to be equal to 0.5 × GVDD, and to track GVDD DC variations as measured at the receiver. Peak-to-peak noise on MVREF may not exceed ±2% of the DC value. 3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be equal to MVREF. This rail should track variations in the DC level of MVREF. 4. Output leakage is measured with all outputs disabled, 0 V ≤ VOUT ≤ GVDD. Table 12 provides the DDR capacitance. Table 12. DDR SDRAM Capacitance Parameter/Condition Symbol Min Max Unit Notes Input/output capacitance: DQ, DQS, MSYNC_IN CIO 6 8 pF 1 Delta input/output capacitance: DQ, DQS CDIO — 0.5 pF 1 Note: 1. This parameter is sampled. GV DD = 2.5 V ± 0.125 V, f = 1 MHz, TA = 25°C, VOUT = GVDD/2, VOUT (peak to peak) = 0.2 V. MPC8541E PowerQUICC™ III Integrated Communications Processor Hardware Specification, Rev. 4.2 16 Freescale Semiconductor DDR SDRAM 6.2 DDR SDRAM AC Electrical Characteristics This section provides the AC electrical characteristics for the DDR SDRAM interface. 6.2.1 DDR SDRAM Input AC Timing Specifications Table 13 provides the input AC timing specifications for the DDR SDRAM interface. Table 13. DDR SDRAM Input AC Timing Specifications At recommended operating conditions with GVDD of 2.5 V ± 5%. Parameter Symbol Min Max Unit Notes AC input low voltage VIL — MVREF – 0.31 V — AC input high voltage VIH MV REF + 0.31 GVDD + 0.3 V — tDISKEW — ps 1 MDQS—MDQ/MECC input skew per byte For DDR = 333 MHz For DDR < 266 MHz 750 1125 Note: 1. Maximum possible skew between a data strobe (MDQS[n]) and any corresponding bit of data (MDQ[8n + {0...7}] if 0