NXP Semiconductors
Technical Data
Document Number: MRF085H
Rev. 1, 10/2017
RF Power LDMOS Transistor
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFET
MRF085H
This high ruggedness device is designed for use in high VSWR industrial,
scientific and medical applications and sub--GHz aerospace and defense and
mobile radio applications. Its unmatched input and output design allows for
wide frequency range use from 1.8 to 1215 MHz.
Typical Performance: VDD = 50 Vdc
Frequency
(MHz)
Signal Type
Pout
(W)
Gps
(dB)
D
(%)
30–520 (1,2)
CW
50 CW
14.0
40.0
520 (3)
CW
85 CW
25.6
73.3
1.8–1215 MHz, 85 W CW, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTOR
Load Mismatch/Ruggedness
Frequency
(MHz)
520
(3)
Signal Type
VSWR
Pin
(W)
Test
Voltage
CW
> 65:1
at all Phase
Angles
0.56
(3 dB
Overdrive)
50
Result
1. Measured in 30–520 MHz broadband reference circuit.
2. The values shown are the minimum measured performance numbers across the
indicated frequency range.
3. Measured in 520 MHz narrowband test circuit (page 5).
Features
Unmatched input and output allowing wide frequency range utilization
Device can be used single--ended or in a push--pull configuration
Characterized from 30 to 50 V for ease of use
Suitable for linear application
Integrated ESD protection with greater negative gate--source voltage range
for improved Class C operation
Typical Applications
Industrial, scientific, medical (ISM)
– Laser generation
– Plasma etching
– Particle accelerators
– Industrial heating, welding and drying systems
Broadcast
– Radio broadcast
– VHF TV broadcast
Aerospace
– VHF omnidirectional range (VOR)
– HF and VHF communications
– Weather radar
Mobile radio
– VHF and UHF radios
2017 NXP B.V.
RF Device Data
NXP Semiconductors
NI--650H--4L
No Device
Degradation
Gate A
3
1 Drain A
Gate B
4
2 Drain B
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
MRF085H
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
--0.5, +133
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
50, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
C
TC
--40 to +150
C
Case Operating Temperature Range
Operating Junction Temperature Range
(1,2)
Total Device Dissipation @ TC = 25C
Derate above 25C
TJ
--40 to +225
C
PD
235
1.18
W
W/C
Symbol
Value (2,3)
Unit
RJC
0.85
C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
CW: Case Temperature 85C, 85 W CW, 50 Vdc, IDQ(A+B) = 100 mA, 520 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2, passes 2000 V
Charge Device Model (per JESD22--C101)
C2, passes 500 V
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
IGSS
—
—
400
nAdc
133
—
—
Vdc
Off Characteristics (4)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID = 50 mA)
V(BR)DSS
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
—
—
2
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS = 0 Vdc)
IDSS
—
—
7
Adc
Gate Threshold Voltage (4)
(VDS = 10 Vdc, ID = 85 Adc)
VGS(th)
1.5
2.0
3.0
Vdc
Gate Quiescent Voltage
(VDD = 50 Vdc, ID(A+B) = 100 mAdc, Measured in Functional Test)
VGS(Q)
2.0
2.6
3.3
Vdc
Drain--Source On--Voltage (4)
(VGS = 10 Vdc, ID = 210 mAdc)
VDS(on)
—
0.27
—
Vdc
Reverse Transfer Capacitance
(VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.17
—
pF
Output Capacitance
(VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
14.7
—
pF
Input Capacitance
(VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz)
Ciss
—
39.0
—
pF
On Characteristics
Dynamic Characteristics (4)
1.
2.
3.
4.
Continuous use at maximum temperature will affect MTTF.
MTTF calculator available at http://www.nxp.com/RF/calculators.
Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
Each side of device measured separately.
(continued)
MRF085H
2
RF Device Data
NXP Semiconductors
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In NXP Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ(A+B) = 100 mA, Pout = 85 W CW, f = 520 MHz
Power Gain
Gps
24.0
25.6
28.0
dB
Drain Efficiency
D
70.0
73.3
—
%
Input Return Loss
IRL
—
–21
–9
dB
Load Mismatch/Ruggedness (In NXP Test Fixture, 50 ohm system) IDQ = 150 mA
Frequency
(MHz)
Signal
Type
520
CW
VSWR
Pin
(W)
> 65:1
at all Phase Angles
0.56
(3 dB Overdrive)
Test Voltage, VDD
Result
50
No Device
Degradation
Table 5. Ordering Information
Device
Tape and Reel Information
Package
MRF085HR3
R3 Suffix = 250 Units, 44 mm Tape Width, 13--inch Reel
NI--650H--4L
MRF085HR5
R5 Suffix = 50 Units, 44 mm Tape Width, 13--inch Reel
NI--650H--4L
MRF085H
RF Device Data
NXP Semiconductors
3
TYPICAL CHARACTERISTICS
100
1.06
IDQ(A+B) = 20 mA
Coss
10
Measured with 30 mV(rms)ac
@ 1 MHz, VGS = 0 Vdc
1
0
10
20
30
40
1.02
100 mA
200 mA
1.00
300 mA
0.98
0.96
Crss
0.1
VDD = 50 Vdc
1.04
NORMALIZED VGS(Q)
C, CAPACITANCE (pF)
Ciss
0.94
–50
50
–25
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
0
25
50
75
100
TC, CASE TEMPERATURE (C)
Note: Each side of device measured separately.
Figure 2. Capacitance versus Drain--Source Voltage
IDQ (mA)
Slope (mV/C)
20
–2.35
100
–1.88
200
–1.78
300
–1.59
Figure 3. Normalized VGS versus Quiescent
Current and Case Temperature
108
ID = 1.86 Amps
VDD = 50 Vdc
MTTF (HOURS)
107
106
ID = 2.59 Amps
ID = 2.34 Amps
105
104
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (C)
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http:/www.nxp.com/RF/calculators.
Figure 4. MTTF versus Junction Temperature – CW
MRF085H
4
RF Device Data
NXP Semiconductors
520 MHz NARROWBAND PRODUCTION TEST FIXTURE – 4.0 5.0 (10.2 mm 12.7 mm)
C10 C11
MRF085H
Rev. 0
B1
C1
C13
D93611
C2
C9
C12
L5
Coax1
Coax3
L3
C5
C4
L1
C8
C16
C17
L2
L4
Coax2
C14
C15
CUT OUT AREA
C3
C23
L6
Coax4
C6
C7
C19
C18
B2
C20 C21
C22
Figure 5. MRF085H Narrowband Test Circuit Component Layout – 520 MHz
Table 6. MRF085H Narrowband Test Circuit Component Designations and Values – 520 MHz
Part
Description
Part Number
Manufacturer
B1, B2
Short RF Bead
2743019447
Fair-Rite
C1, C7
22 F, 35 V Tantalum Capacitor
T491X226K035AT
Kemet
C2, C6, C9, C18
240 pF Chip Capacitor
ATC100B241JT200XT
ATC
C3, C4
51 pF Chip Capacitor
ATC100B510GT500XT
ATC
C5
36 pF Chip Capacitor
ATC100B360JT500XT
ATC
C8
5.1 pF Chip Capacitor
ATC100B5R1CT500XT
ATC
C10, C20
10 pF Chip Capacitor
ATC200B103KT50XT
ATC
C11, C21
0.01 F Chip Capacitor
C1825C103K1GACTU
Kemet
C12, C19
0.1 F Chip Capacitor
C1812F104K1RACTU
Kemet
C13, C22
220 F, 100 V Electrolytic Capacitor
MCGPR100V227M16X26-RH
Multicomp
C14, C15, C16, C17
120 pF Chip Capacitor
ATC100B121JT300XT
ATC
C23
5.6 pF Chip Capacitor
ATC100B5R6CT500XT
ATC
Coax1, 2, 3, 4
25 , Semi Rigid Coax, 2.4” Shield Length
UT141-25
Precision Tube Company
L1, L2, L5, L6
2.5 nH Inductor, 1 Turn
A01TKLC
Coilcraft
L3, L4
22 nH Inductor, 7 Turns
B07TJLC
Coilcraft
PCB
Arlon AD255A, 0.030, r = 2.55
D93611
MTL
MRF085H
RF Device Data
NXP Semiconductors
5
TYPICAL CHARACTERISTICS – 520 MHz
PRODUCTION TEST FIXTURE
27
45
40
35
5
10
15
20
25
26
70
60
200 mA
25
24
50
40
100 mA
20 mA
23
30
D
22
20
30
Gps
IDQ(A+B) = 300 mA
21
30
80
VDD = 50 Vdc, f = 520 MHz
200 mA
100 mA
20
300 mA
10
10
1
Pin, INPUT POWER (dBm)
100
0
200
Pout, OUTPUT POWER (WATTS)
f
(MHz)
P1dB
(W)
P3dB
(W)
520
88
94
Figure 7. Power Gain and Drain Efficiency
versus CW Output Power and Quiescent Current
Figure 6. CW Output Power versus Input Power
26
25
24
25_C
85_C 60
50
40
30
D
22 85_C
20
21
10
20
0.5
1
10
IDQ(A+B) = 100 mA, f = 520 MHz
70
TC = –40_C
23 25_C
28
80
–40_C
100
0
200
26
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)
27
VDD = 50 Vdc, IDQ(A+B) = 100 mA
f = 520 MHz
Gps
D, DRAIN EFFICIENCY (%)
28
24
50 V
22
45 V
40 V
20
35 V
VDD = 30 V
18
0
20
40
60
80
100
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
Figure 8. Power Gain and Drain Efficiency
versus CW Output Power
Figure 9. Power Gain versus CW Output Power
and Drain--Source Voltage
MRF085H
6
RF Device Data
NXP Semiconductors
D, DRAIN EFFICIENCY (%)
28
VDD = 50 Vdc, IDQ(A+B) = 100 mA
f = 520 MHz
Gps, POWER GAIN (dB)
Pout, OUTPUT POWER (dBm)
50
520 MHz NARROWBAND PRODUCTION TEST FIXTURE
f
MHz
Zsource
Zload
520
1.32 + j20.2
22.6 + j18.2
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
50
Input
Matching
Network
= Test circuit impedance as measured from
drain to drain, balanced configuration.
+
-Zsource
Device
Under
Test
--
Output
Matching
Network
50
+
Zload
Figure 10. Narrowband Series Equivalent Source and Load Impedance — 520 MHz
MRF085H
RF Device Data
NXP Semiconductors
7
PACKAGE DIMENSIONS
MRF085H
8
RF Device Data
NXP Semiconductors
MRF085H
RF Device Data
NXP Semiconductors
9
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
July 2017
Initial release of data sheet
1
Oct. 2017
Table 5, Ordering Information: added MRF085HR3 to table and R3 suffix tape and reel information, p. 3
MRF085H
10
RF Device Data
NXP Semiconductors
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including without limitation consequential or incidental damages. “Typical” parameters
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E 2017 NXP B.V.
MRF085H
Document
Number:
RF
Device
Data MRF085H
Rev. 1,Semiconductors
10/2017
NXP
11
