NXP Semiconductors
Technical Data
Document Number: MRF101AN
Rev. 1, 05/2019
RF Power LDMOS Transistors
MRF101AN
MRF101BN
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These devices are designed for use in HF and VHF communications,
industrial, scientific and medical (ISM) and broadcast and aerospace
applications. The devices are extremely rugged and exhibit high performance
up to 250 MHz.
Typical Performance: VDD = 50 Vdc
Frequency
(MHz)
13.56
Signal Type
Pout
(W)
Gps
(dB)
D
(%)
(1)
CW
130 CW
27.1
79.6
27 (2)
CW
125 CW
24.9
79.6
40.68 (3)
CW
120 CW
23.8
81.5
CW
119 CW
22.8
82.1
CW
130 CW
23.2
80.8
87.5–108 (6,7)
CW
115 CW
20.6
76.8
136–174 (7,8)
CW
104 CW
21.2
76.5
Pulse
(100 sec, 20% Duty Cycle)
115 Peak
21.1
76.7
50
(4)
81.36
230
(5)
(9)
1.8–250 MHz, 100 W CW, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
S
G
S
D
TO--220--3
MRF101AN
S
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type
VSWR
40.68
CW
230
Pulse
(100 sec, 20%
Duty Cycle)
D
Pin
(W)
Test
Voltage
> 65:1 at all
Phase
Angles
0.64 CW
50
No Device
Degradation
> 65:1 at all
Phase
Angles
1.8 Peak
(3 dB
Overdrive)
50
No Device
Degradation
1.
2.
3.
4.
5.
6.
7.
Result
Measured in 13.56 MHz reference circuit (page 5).
Measured in 27 MHz reference circuit (page 9).
Measured in 40.68 MHz reference circuit (page 13).
Measured in 50 MHz reference circuit (page 17).
Measured in 81.36 MHz reference circuit (page 21).
Measured in 87.5–108 MHz broadband reference circuit (page 25).
G
The values shown are the center band performance numbers
across the indicated frequency range.
8. Measured in 136–174 MHz VHF broadband reference circuit (page 30).
9. Measured in 230 MHz fixture (page 34).
SG
TO--220--3
MRF101BN
D
Backside
Note: Exposed backside of the package
and tab also serves as a source
terminal for the transistor.
S
Features
Mirror pinout versions (A and B) to simplify use in a push--pull,
two--up configuration
Characterized from 30 to 50 V
Suitable for linear application
Integrated ESD protection with greater negative gate--source
voltage range for improved Class C operation
Included in NXP product longevity program with assured
supply for a minimum of 15 years after launch
Typical Applications
Radio and VHF TV broadcast
Industrial, scientific, medical (ISM)
– Laser generation
HF and VHF communications
– Plasma etching
Switch mode power supplies
– Particle accelerators
– MRI and other medical applications
– Industrial heating, welding and drying systems
2018–2019 NXP B.V.
RF Device Data
NXP Semiconductors
MRF101AN MRF101BN
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
–0.5, +133
Vdc
Gate--Source Voltage
VGS
–6.0, +10
Vdc
Operating Voltage
VDD
50
Vdc
Storage Temperature Range
Tstg
– 65 to +150
C
Case Operating Temperature Range
TC
–40 to +150
C
Operating Junction Temperature Range (1,2)
TJ
–40 to +175
C
Total Device Dissipation @ TC = 25C
Derate above 25C
PD
182
0.91
W
W/C
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
CW: Case Temperature 77C, 150 W CW, 50 Vdc, IDQ = 100 mA, 40.68 MHz
RJC
1.1
C/W
Thermal Impedance, Junction to Case
Pulse: Case Temperature 73C, 113 W Peak, 100 sec Pulse Width, 20% Duty Cycle,
50 Vdc, IDQ = 100 mA, 230 MHz
ZJC
0.37
C/W
Table 2. Thermal Characteristics
Characteristic
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JS--001--2017)
1B, passes 1000 V
Charge Device Model (per JS--002--2014)
C3, passes 1200 V
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
IGSS
—
—
1
Adc
133
—
—
Vdc
IDSS
—
—
10
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 290 Adc)
VGS(th)
1.7
2.2
2.7
Vdc
Gate Quiescent Voltage
(VDS = 50 Vdc, ID = 100 mAdc)
VGS(Q)
—
2.5
—
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.45
—
Vdc
gfs
—
7.1
—
S
Off Characteristics
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID = 50 mAdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS = 0 Vdc)
V(BR)DSS
On Characteristics
Forward Transconductance
(VDS = 10 Vdc, ID = 8.8 Adc)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
(continued)
MRF101AN MRF101BN
2
RF Device Data
NXP Semiconductors
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Transfer Capacitance
(VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.96
—
pF
Output Capacitance
(VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
43.4
—
pF
Input Capacitance
(VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz)
Ciss
—
149
—
pF
Dynamic Characteristics
Typical Performance — 230 MHz (In NXP 230 MHz Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pin = 0.9 W, f = 230 MHz,
100 sec Pulse Width, 20% Duty Cycle
Common--Source Amplifier Output Power
Pout
—
115
—
W
Power Gain
Gps
—
21.1
—
dB
Drain Efficiency
D
—
76.7
—
%
Table 5. Load Mismatch/Ruggedness (In NXP 230 MHz Fixture, 50 ohm system) IDQ = 100 mA
Frequency
(MHz)
230
Signal Type
VSWR
Pin
(W)
Pulse
(100 sec, 20% Duty Cycle)
> 65:1 at all
Phase Angles
1.8 Peak
(3 dB Overdrive)
Test Voltage, VDD
Result
50
No Device Degradation
Table 6. Ordering Information — Device
Device
Shipping Information
Package
MRF101AN
MRF101BN
MPQ = 250 devices (50 devices per tube, 5 tubes per box)
TO--220--3L (Pin 1: Gate,
Pin 2: Source, Pin 3: Drain)
TO--220--3L (Pin 1: Drain,
Pin 2: Source, Pin 3: Gate)
Table 7. Ordering Information — Reference Circuits
Order Number
Description
MRF101AN-13MHZ
MRF101AN 13.56 MHz Reference Circuit
MRF101AN-27MHZ
MRF101AN 27 MHz Reference Circuit
MRF101AN-40MHZ
MRF101AN 40.68 MHz Reference Circuit
MRF101AN-50MHZ
MRF101AN 50 MHz Reference Circuit
MRF101AN-81MHZ
MRF101AN 81.36 MHz Reference Circuit
MRF101AN-88MHZ
MRF101AN 87.5–108 MHz Reference Circuit
MRF101AN-VHF
MRF101AN 136–174 MHz Reference Circuit
MRF101AN-230MHZ
MRF101AN 230 MHz Test Fixture
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
3
TYPICAL CHARACTERISTICS
1000
Measured with 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc
C, CAPACITANCE (pF)
Ciss
100
Coss
10
Crss
1
0.1
0
10
20
30
40
50
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 1. Capacitance versus Drain--Source Voltage
1010
MTTF (HOURS)
109
VDD = 50 Vdc
ID = 2.5 Amps
ID = 3.1 Amps
108
ID = 3.6 Amps
107
106
90
110
130
150
170
190
TJ, JUNCTION TEMPERATURE (C)
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http://www.nxp.com/RF/calculators.
Figure 2. MTTF versus Junction Temperature — CW
MRF101AN MRF101BN
4
RF Device Data
NXP Semiconductors
13.56 MHz COMPACT REFERENCE CIRCUIT (MRF101AN) — 0.7 2.0 (1.8 cm 5.0 cm)
Table 8. 13.56 MHz Performance (In NXP Reference Circuit, 50 ohm system)
VDD = 50 Vdc, IDQ = 100 mA, Pin = 0.25 W, CW
Frequency
(MHz)
Pout
(W)
Gps
(dB)
D
(%)
13.56
130
27.1
79.6
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
5
13.56 MHz COMPACT REFERENCE CIRCUIT (MRF101AN) — 0.7 2.0 (1.8 cm 5.0 cm)
C4 C5
L2
C10
C3
L3
L1
C1
C2
C13
C14
C9
L4
D113958
Q1
C6
C7
C8
R1
VGS
C12
C11
B1
VDS
aaa--033382
Figure 3. MRF101AN Compact Reference Circuit Component Layout and Assembly Example — 13.56 MHz
D113958
aaa--032274
Figure 4. MRF101AN Compact Reference Circuit Board
Table 9. MRF101AN Compact Reference Circuit Component Designations and Values — 13.56 MHz
Part
Description
Part Number
Manufacturer
B1
Short RF Bead
2743019447
Fair-Rite
C1, C2, C9, C10, C12, C13
0.01 F Chip Capacitor
GRM21BR72A103KA01B
Murata
C3
33 pF Chip Capacitor
GQM2195C2E330GB12D
Murata
C4
360 pF Chip Capacitor
GRM2165C2A361JA01D
Murata
C5
390 pF Chip Capacitor
GRM2165C2A391JA01D
Murata
C6
68 pF Chip Capacitor
GQM2195C2E680GB12D
Murata
C7
200 pF Chip Capacitor
GQM2195C2A201GB12D
Murata
C8
0.01 F Chip Capacitor
200B103KT50XT
ATC
C11
1 F Chip Capacitor
GRM21BR71H105KA12L
Murata
C14
1 F Chip Capacitor
C3216X7R2A105K160AA
TDK
L1
820 nH Chip Inductor
0805WL821JT
ATC
L2
4 Turn, #20 AWG, ID = 0.2 Inductor, Hand Wound
8076
Belden
L3
500 nH Square Air Core Inductor
2929SQ-501JE
Coilcraft
L4
330 nH Square Air Core Inductor
2929SQ-331JE
Coilcraft
Q1
RF Power LDMOS Transistor
MRF101AN
NXP
R1
75 , 1/4 W Chip Resistor
SG73P2ATTD75R0F
KOA Speer
PCB
FR4 0.09, r = 4.8, 2 oz. Copper
D113958
MTL
MRF101AN MRF101BN
6
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS — 13.56 MHz
COMPACT REFERENCE CIRCUIT (MRF101AN)
160
VDD = 50 Vdc, f = 13.56 MHz, CW
120
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
140
Pin = 0.25 W
100
Pin = 0.12 W
80
60
40
20
0
VDD = 50 Vdc, IDQ = 100 mA, f = 13.56 MHz, CW
140
120
100
80
60
40
20
0
0.5
1
1.5
2
2.5
3
0
3.5
0
0.05
0.15
0.1
VGS, GATE--SOURCE VOLTAGE (VOLTS)
0.2
0.25
0.3
0.35
0.4
0.45
Pin, INPUT POWER (WATTS)
Figure 5. CW Output Power versus Gate--Source
Voltage at a Constant Input Power
f
(MHz)
P1dB
(W)
P3dB
(W)
13.56
113
128
Figure 6. CW Output Power versus Input Power
100
32
VDD = 50 Vdc, IDQ = 100 mA, f = 13.56 MHz, CW
90
80
Gps, POWER GAIN (dB)
30
Gps
29
70
60
28
50
27
26
40
D
25
30
24
20
23
10
22
0
20
40
60
80
100
120
D, DRAIN EFFICIENCY (%)
31
0
140
Pout, OUTPUT POWER (WATTS)
Figure 7. Power Gain and Drain Efficiency
versus CW Output Power
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
7
13.56 MHz COMPACT REFERENCE CIRCUIT (MRF101AN)
f
(MHz)
Zsource
()
Zload
(
13.56
25.3 + j10.2
11.3 – j6.4
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
50
= Test circuit impedance as measured from
drain to ground.
Device
Under
Test
Input
Matching
Network
Zsource
Output
Matching
Network
50
Zload
Figure 8. Series Equivalent Source and Load Impedance — 13.56 MHz
MRF101AN MRF101BN
8
RF Device Data
NXP Semiconductors
27 MHz COMPACT REFERENCE CIRCUIT (MRF101AN) — 0.7 2.0 (1.8 cm 5.0 cm)
Table 10. 27 MHz Performance (In NXP Reference Circuit, 50 ohm system)
VDD = 50 Vdc, IDQ = 100 mA, Pin = 0.4 W, CW
Frequency
(MHz)
Pout
(W)
Gps
(dB)
D
(%)
27
125
24.9
79.6
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
9
27 MHz COMPACT REFERENCE CIRCUIT (MRF101AN) — 0.7 2.0 (1.8 cm 5.0 cm)
C4 C5
L2
C3
C13
C14
C15
L1
C1
C6
C7
L3
R1
C2
L4
D113958
Q1
C8 C10
C12
C9
C11
B1
VGS
VDS
aaa--033384
Figure 9. MRF101AN Compact Reference Circuit Component Layout and Assembly Example — 27 MHz
D113958
aaa--032274
Figure 10. MRF101AN Compact Reference Circuit Board
Table 11. MRF101AN Compact Reference Circuit Component Designations and Values — 27 MHz
Part
Description
Part Number
Manufacturer
B1
Short RF Bead
2743019447
Fair-Rite
C1
82 pF Chip Capacitor
GQM2195C2E820GB12D
Murata
C2
200 pF Chip Capacitor
GQM2195C2A201GB12D
Murata
C3
33 pF Chip Capacitor
GQM2195C2E330GB12D
Murata
C4, C5
160 pF Chip Capacitor
GQM2195C2A161JB12D
Murata
C6
15 pF Chip Capacitor
GQM2195C2E150FB12D
Murata
C7
100 pF Chip Capacitor
GQM2195C2E101GB12D
Murata
C8, C9, C10
1000 pF Chip Capacitor
GRM2165C2A102JA01D
Murata
C11
1 F Chip Capacitor
08055C105KAT2A
AVX
C12, C13
0.01 F Chip Capacitor
GRM21BR72A103KA01B
Murata
C14
1 F Chip Capacitor
CL31B105KCHSNNE
Samsung
C15
6.8 nF Chip Capacitor
GRM32QR73A682KW
Murata
L1
270 nH Chip Inductor
0805WL221JT
ATC
L2
39 nH Chip Inductor
1812SMS-39NJLC
Coilcraft
L3
300 nH Square Air Core Inductor
2222SQ-301JE
Coilcraft
L4
180 nH Square Air Core Inductor
2222SQ-181JE
Coilcraft
Q1
RF Power LDMOS Transistor
MRF101AN
NXP
R1
75 , 1/4 W Chip Resistor
SG73P2ATTD75R0F
KOA Speer
PCB
FR4 0.09, r = 4.8, 2 oz. Copper
D113958
MTL
MRF101AN MRF101BN
10
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS — 27 MHz
COMPACT REFERENCE CIRCUIT (MRF101AN)
160
VDD = 50 Vdc, f = 27 MHz, CW
Pin = 0.4 W
100
Pin = 0.2 W
80
60
40
20
0
VDD = 50 Vdc, IDQ = 100 mA, f = 27 MHz, CW
140
120
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
140
120
100
80
60
40
20
0
0.5
1
1.5
2.5
2
3
0
3.5
0.1
0
0.2
VGS, GATE--SOURCE VOLTAGE (VOLTS)
0.3
0.4
0.5
0.6
0.7
Pin, INPUT POWER (WATTS)
Figure 11. CW Output Power versus
Gate--Source Voltage at a Constant Input Power
f
(MHz)
P1dB
(W)
P3dB
(W)
27
103
125
Figure 12. CW Output Power versus Input Power
100
30
VDD = 50 Vdc, IDQ = 100 mA, f = 27 MHz, CW
Gps
28
Gps, POWER GAIN (dB)
90
80
27
70
26
60
25
50
40
24
D
23
30
22
20
21
10
20
0
20
40
60
80
100
120
D, DRAIN EFFICIENCY (%)
29
0
140
Pout, OUTPUT POWER (WATTS)
Figure 13. Power Gain and Drain Efficiency
versus CW Output Power
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
11
27 MHz COMPACT REFERENCE CIRCUIT (MRF101AN)
f
(MHz)
Zsource
()
Zload
()
27
28.9 + j14.7
12.9 – j5.3
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
50
= Test circuit impedance as measured from
drain to ground.
Device
Under
Test
Input
Matching
Network
Zsource
Output
Matching
Network
50
Zload
Figure 14. Series Equivalent Source and Load Impedance — 27 MHz
MRF101AN MRF101BN
12
RF Device Data
NXP Semiconductors
40.68 MHz COMPACT REFERENCE CIRCUIT (MRF101AN) — 0.7 2.0 (1.8 cm 5.0 cm)
Table 12. 40.68 MHz Performance (In NXP Reference Circuit, 50 ohm system)
VDD = 50 Vdc, IDQ = 100 mA, Pin = 0.5 W, CW
Frequency
(MHz)
Pout
(W)
Gps
(dB)
D
(%)
40.68
120
23.8
81.5
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
13
40.68 MHz COMPACT REFERENCE CIRCUIT (MRF101AN) — 0.7 2.0 (1.8 cm 5.0 cm)
C4
L2
C3
C10
L4
D113958
Q1
C13
C5
L1
C2
C1
VGS
R1
L3
C12
C11
C9
C14
C6
B1
C8
C7
VDS
aaa--032273
Figure 15. MRF101AN Compact Reference Circuit Component Layout and Assembly Example — 40.68 MHz
D113958
aaa--032274
Figure 16. MRF101AN Compact Reference Circuit Board
Table 13. MRF101AN Compact Reference Circuit Component Designations and Values — 40.68 MHz
Part
Description
Part Number
Manufacturer
B1
Short RF Bead
2743019447
Fair-Rite
C1, C5
82 pF Chip Capacitor
GQM2195C2E820GB12D
Murata
C2, C4
200 pF Chip Capacitor
GQM2195C2A201GB12D
Murata
C3
33 pF Chip Capacitor
GQM2195C2E330GB12D
Murata
C6, C7, C8, C9, C10
1000 pF Chip Capacitor
GRM2165C2A102JA01D
Murata
C11
1 F Chip Capacitor
GJ821BR71H105KA12L
Murata
C12, C13
0.01 F Chip Capacitor
GRM21BR72A103KA01B
Murata
C14
1 F Chip Capacitor
C3216X7R2A105K160AA
TDK
L1
150 nH Chip Inductor
0805WL151JT
ATC
L2
17.5 nH, 4 Turn Inductor
GA3095-ACL
Coilcraft
L3
160 nH Square Air Core Inductor
2222SQ-161JEC
Coilcraft
L4
110 nH Square Air Core Inductor
2222SQ-111JEB
Coilcraft
Q1
RF Power LDMOS Transistor
MRF101AN
NXP
R1
75 , 1/4 W Chip Resistor
SG73P2ATTD75R0F
KOA Speer
PCB
FR4 0.09, r = 4.8, 2 oz. Copper
D113958
MTL
MRF101AN MRF101BN
14
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS — 40.68 MHz
COMPACT REFERENCE CIRCUIT (MRF101AN)
140
VDD = 50 Vdc, f = 40.68 MHz, CW
120
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
140
Pin = 0.5 W
100
Pin = 0.25 W
80
60
40
20
0
0
0.5
1
1.5
2.5
2
3
VDD = 50 Vdc, IDQ = 100 mA, f = 40.68 MHz, CW
120
100
80
60
40
20
0
3.5
0.1
0
0.2
VGS, GATE--SOURCE VOLTAGE (VOLTS)
0.3
0.4
0.5
0.6
0.7
Pin, INPUT POWER (WATTS)
Figure 17. CW Output Power versus
Gate--Source Voltage at a Constant Input Power
f
(MHz)
P1dB
(W)
P3dB
(W)
40.68
101
121
Figure 18. CW Output Power versus Input Power
100
30
VDD = 50 Vdc, IDQ = 100 mA, f = 40.68 MHz, CW
90
80
Gps, POWER GAIN (dB)
28
27
70
Gps
26
60
25
50
40
24
D
23
30
22
20
21
10
20
0
20
40
60
80
100
120
D, DRAIN EFFICIENCY (%)
29
0
140
Pout, OUTPUT POWER (WATTS)
Figure 19. Power Gain and Drain Efficiency
versus CW Output Power
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
15
40.68 MHz COMPACT REFERENCE CIRCUIT (MRF101AN)
f
(MHz)
Zsource
()
Zload
()
40.68
24.0 + j12.6
14.2 – j2.5
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
50
= Test circuit impedance as measured from
drain to ground.
Device
Under
Test
Input
Matching
Network
Zsource
Output
Matching
Network
50
Zload
Figure 20. Series Equivalent Source and Load Impedance — 40.68 MHz
MRF101AN MRF101BN
16
RF Device Data
NXP Semiconductors
50 MHz COMPACT REFERENCE CIRCUIT (MRF101AN) — 0.7 2.0 (1.8 cm 5.0 cm)
Table 14. 50 MHz Performance (In NXP Reference Circuit, 50 ohm system)
VDD = 50 Vdc, IDQ = 100 mA, Pin = 0.64 W, CW
Frequency
(MHz)
Pout
(W)
Gps
(dB)
D
(%)
50
119
22.8
82.1
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
17
50 MHz COMPACT REFERENCE CIRCUIT (MRF101AN) — 0.7 2.0 (1.8 cm 5.0 cm)
C4
L4
D113958
Q1
L2
C10 C13
L1
C2
C9
R1
C1
L3
C12
C5
C3
C6
C8
C7
B1
VGS C11
VDS
aaa--033386
Figure 21. MRF101AN Compact Reference Circuit Component Layout and Assembly Example — 50 MHz
D113958
aaa--032274
Figure 22. MRF101AN Compact Reference Circuit Board
Table 15. MRF101AN Compact Reference Circuit Component Designations and Values — 50 MHz
Part
Description
Part Number
Manufacturer
B1
Short RF Bead
2743019447
Fair-Rite
C1
82 pF Chip Capacitor
GQM2195C2E820GB12D
Murata
C2
200 pF Chip Capacitor
GQM2195C2A201GB12D
Murata
C3
1 F Chip Capacitor
CL31B105KCHSNNE
Samsung
C4
180 pF Chip Capacitor
GQM2195C2A181GB12D
Murata
C5
68 pF Chip Capacitor
GQM2195C2E680GB12D
Murata
C6, C7, C8, C9, C10
1000 pF Chip Capacitor
GRM2165C2A102JA01D
Murata
C11
1 F Chip Capacitor
08055C105KAT2A
AVX
C12, C13
0.01 F Chip Capacitor
GRM21BR72A103KA01B
Murata
L1
100 nH Chip Inductor
0805WL101JT
ATC
L2
17.5 nH Air Core Inductor
GA3095-ALC
Coilcraft
L3
160 nH Square Air Core Inductor
2222SQ-161JEC
Coilcraft
L4
110 nH Square Air Core Inductor
2222SQ-111JEB
Coilcraft
Q1
RF Power LDMOS Transistor
MRF101AN
NXP
R1
75 , 1/4 W Chip Resistor
SG73P2ATTD75R0F
KOA Speer
PCB
FR4 0.09, r = 4.8, 2 oz. Copper
D113958
MTL
MRF101AN MRF101BN
18
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS — 50 MHz
COMPACT REFERENCE CIRCUIT (MRF101AN)
160
VDD = 50 Vdc, f = 50 MHz, CW
120
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
140
Pin = 0.64 W
100
Pin = 0.32 W
80
60
40
20
0
VDD = 50 Vdc, IDQ = 100 mA, f = 50 MHz, CW
140
120
100
80
60
40
20
0
0.5
1
1.5
2.5
2
3
0
3.5
0.1
0
0.2
VGS, GATE--SOURCE VOLTAGE (VOLTS)
0.3
0.4
0.5
0.6
0.7
0.8
Pin, INPUT POWER (WATTS)
Figure 23. CW Output Power versus
Gate--Source Voltage at a Constant Input Power
f
(MHz)
P1dB
(W)
P3dB
(W)
50
99
118
Figure 24. CW Output Power versus Input Power
100
30
VDD = 50 Vdc, IDQ = 100 mA, f = 50 MHz, CW
90
28
80
27
70
26
60
Gps
25
50
40
24
23
30
D
22
20
21
10
20
0
20
40
60
80
100
120
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
29
0
140
Pout, OUTPUT POWER (WATTS)
Figure 25. Power Gain and Drain Efficiency
versus CW Output Power
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
19
50 MHz COMPACT REFERENCE CIRCUIT (MRF101AN)
f
(MHz)
Zsource
()
Zload
()
50
19.2 + j12.8
15.8 – j3.2
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
50
= Test circuit impedance as measured from
drain to ground.
Device
Under
Test
Input
Matching
Network
Zsource
Output
Matching
Network
50
Zload
Figure 26. Series Equivalent Source and Load Impedance — 50 MHz
MRF101AN MRF101BN
20
RF Device Data
NXP Semiconductors
81.36 MHz REFERENCE CIRCUIT (MRF101AN) — 2.0 3.0 (5.0 cm 7.6 cm)
Table 16. 81.36 MHz Performance (In NXP Reference Circuit, 50 ohm system)
VDD = 50 Vdc, IDQ = 100 mA, Pin = 0.64 W, CW
Frequency
(MHz)
Pout
(W)
Gps
(dB)
D
(%)
81.36
130
23.2
80.8
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
21
81.36 MHz REFERENCE CIRCUIT (MRF101AN) — 2.0 3.0 (5.0 cm 7.6 cm)
R3
C10
R2
C9
U1
C15
VDS
R4
B1
C13
C8
C7
Q1
C11
C12
C1
C14
L4
R1
L1
C2
L2
L3
C3
C5
C6
C4
Rev. 0
D112904
aaa--033387
Figure 27. MRF101AN Reference Circuit Component Layout — 81.36 MHz
Table 17. MRF101AN Reference Circuit Component Designations and Values — 81.36 MHz
Part
Description
Part Number
Manufacturer
B1
Short RF Bead
2743019447
Fair-Rite
C1, C5, C6, C7, C8
1000 pF Chip Capacitor
GRM2165C2A102JA01D
Murata
C2
200 pF Chip Capacitor
GQM2195C2A201GB12D
Murata
C3
100 pF Chip Capacitor
GQM2195C2E101GB12D
Murata
C4
68 pF Chip Capacitor
GQM2195C2E680GB12D
Murata
C9, C10, C11, C14
1 F Chip Capacitor
GRM21BR71H105KA12L
Murata
C12, C13
0.01 F Chip Capacitor
GRM21BR72A103KA01B
Murata
C15
220 F, 100 V Electrolytic Capacitor
MCGPR100V227M16X26
Multicomp
L1
56 nH Chip Inductor
0805WL560JT
ATC
L2
6.6 nH Air Coil Inductor
GA3093-ALC
Coilcraft
L3
3 Turn, #18 AWG, ID = 0.225 Inductor
Handwound
NXP
L4
7 Turn, #18 AWG, ID = 0.225 Inductor
Handwound
NXP
Q1
RF Power LDMOS Transistor
MRF101AN
NXP
R1
75 , 1/4 W Chip Resistor
SG73P2ATTD75R0F
KOA Speer
R2, R3
10 k, 1/8 W Chip Resistor
CRCW080510K0FKEA
Vishay
R4
5 k Multi-turn Cermet Trimming Potentiometer,
12 Turns
3224W-1-502E
Bourns
U1
Voltage Regulator 5 V, Micro8
LP2951ACDMR2G
ON Semiconductor
PCB
FR4 0.09, r = 4.8, 2 oz. Copper
D112904
MTL
MRF101AN MRF101BN
22
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS — 81.36 MHz
REFERENCE CIRCUIT (MRF101AN)
160
VDD = 50 Vdc, f = 81.36 MHz, CW
120
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
140
Pin = 0.64 W
100
Pin = 0.32 W
80
60
40
20
0
VDD = 50 Vdc, IDQ = 100 mA, f = 81.36 MHz, CW
140
120
100
80
60
40
20
0
0.5
1
1.5
2.5
2
3
0
3.5
0.1
0
0.2
VGS, GATE--SOURCE VOLTAGE (VOLTS)
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Pin, INPUT POWER (WATTS)
Figure 28. CW Output Power versus
Gate--Source Voltage at a Constant Input Power
f
(MHz)
P1dB
(W)
P3dB
(W)
81.36
123
136
Figure 29. CW Output Power versus Input Power
100
29
VDD = 50 Vdc, IDQ = 100 mA, f = 81.36 MHz, CW
90
27
80
26
70
25
60
Gps
24
50
40
23
22
30
D
21
20
20
10
19
0
20
40
60
80
100
120
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
28
0
140
Pout, OUTPUT POWER (WATTS)
Figure 30. Power Gain and Drain Efficiency
versus CW Output Power
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
23
81.36 MHz REFERENCE CIRCUIT (MRF101AN)
f
(MHz)
Zsource
()
Zload
()
81.36
12.0 + j11.0
11.5 + j3.0
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
50
= Test circuit impedance as measured from
drain to ground.
Device
Under
Test
Input
Matching
Network
Zsource
Output
Matching
Network
50
Zload
Figure 31. Series Equivalent Source and Load Impedance — 81.36 MHz
MRF101AN MRF101BN
24
RF Device Data
NXP Semiconductors
87.5–108 MHz COMPACT BROADBAND REFERENCE CIRCUIT (MRF101AN) — 0.7 2.0 (1.8 cm 5.0 cm)
Table 18. 87.5–108 MHz Broadband Performance (In NXP Reference Circuit, 50 ohm system)
VDD = 50 Vdc, IDQ = 100 mA, Pin = 1 W, CW
Frequency
(MHz)
Pout
(W)
Gps
(dB)
D
(%)
87.5
122
20.8
79.0
98
115
20.6
76.8
108
115
20.6
76.0
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
25
87.5–108 MHz COMPACT BROADBAND REFERENCE CIRCUIT (MRF101AN) — 0.7 2.0 (1.8 cm 5.0 cm)
Q1
D113958
L4
C3
L3
L5
C4
C8
C13
C7
L1
C1
C2
C9
C14
R1
C12
VGS
C11
L2
B1
C5
C10
C6
VDS
aaa--033385
Figure 32. MRF101AN Compact Reference Circuit Component Layout and Assembly Example — 87.5–108 MHz
D113958
aaa--032274
Figure 33. MRF101AN Compact Reference Circuit Board
Table 19. MRF101AN Compact Reference Circuit Component Designations and Values — 87.5–108 MHz
Part
Description
Part Number
Manufacturer
B1
Short RF Bead
2743019447
Fair-Rite
C1, C2
200 pF Chip Capacitor
GQM2195C2A201GB12D
Murata
C3
22 pF Chip Capacitor
GQM2195C2E220GB12D
Murata
C4
100 pF Chip Capacitor
GQM2195C2E101GB12D
Murata
C5, C6, C7, C8, C12
510 pF Chip Capacitor
GRM2165C2A511JA01D
Murata
C9
2.7 pF Chip Capacitor
GQM2195C2E2R7BB12D
Murata
C10
36 pF Chip Capacitor
600F360JT250XT
ATC
C11
1 F Chip Capacitor
GJ821BR71H105KA12L
Murata
C13
0.01 F Chip Capacitor
GRM21BR72A103KA01B
Murata
C14
1 F Chip Capacitor
C3216X7R2A105K160AA
TDK
L1
36 nH Chip Inductor
0805WL360JT
ATC
L2, L4, L5
120 nH Chip Inductor
1812SMS-R12JLC
Coilcraft
L3
33 nH Chip Inductor
1812SMS-33NJLC
Coilcraft
Q1
RF Power LDMOS Transistor
MRF101AN
NXP
R1
75 , 1/4 W Chip Resistor
SG73P2ATTD75R0F
KOA Speer
PCB
FR4 0.09, r = 4.8, 2 oz. Copper
D113958
MTL
MRF101AN MRF101BN
26
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS — 87.5–108 MHz
COMPACT BROADBAND REFERENCE CIRCUIT (MRF101AN)
85
VDD = 50 Vdc, Pin = 1 W, lDQ = 100 mA, CW
24
80
23
75
D
70
22
21
65
Gps
20
130
Pout, OUTPUT
POWER (WATTS)
Gps, POWER GAIN (dB)
D, DRAIN
EFFICIENCY (%)
25
120
19
18
110
Pout
100
17
16
87
89
91
93
95
97
99
101 103
105
90
107 109
f, FREQUENCY (MHz)
Figure 34. Power Gain, Drain Efficiency and CW Output
Power versus Frequency at a Constant Input Power
Pout, OUTPUT POWER (WATTS)
140
f = 87.5 MHz
VDD = 50 Vdc, IDQ = 100 mA, CW
120
98 MHz
108 MHz
100
80
60
40
20
0
0
0.2
0.4
0.8
0.6
1.0
1.4
1.2
Pin, INPUT POWER (WATTS)
Figure 35. CW Output Power versus Input Power and Frequency
26
Gps
Gps, POWER GAIN (dB)
25
85
f = 87.5 MHz
VDD = 50 Vdc, lDQ = 100 mA, CW
80
98 MHz
108 MHz
24
23
75
70
65
22
87.5 MHz
21
55
D
20
50
19
108 MHz
98 MHz
18
17
20
60
40
60
80
100
120
45
D, DRAIN EFFICIENCY (%)
27
40
35
140
Pout, OUTPUT POWER (WATTS)
Figure 36. Power Gain and Drain Efficiency versus
CW Output Power and Frequency
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
27
87.5–108 MHz COMPACT BROADBAND REFERENCE CIRCUIT (MRF101AN)
f
(MHz)
Zsource
()
Zload
()
87.5
8.52 + j12.46
13.15 + j5.48
98
10.59 + j14.03
13.12 + j5.21
108
12.21 + j15.02
10.74 + j5.52
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
50
= Test circuit impedance as measured from
drain to ground.
Device
Under
Test
Input
Matching
Network
Zsource
Output
Matching
Network
50
Zload
Figure 37. Series Equivalent Source and Load Impedance — 87.5–108 MHz
MRF101AN MRF101BN
28
RF Device Data
NXP Semiconductors
HARMONIC MEASUREMENTS — 87.5–108 MHz
COMPACT BROADBAND REFERENCE CIRCUIT
F1
H2
H3
H4
Amplitude (10 dB per Division)
Fundamental (F1)
87.5 MHz
175 MHz –32 dB
262.5 MHz –52 dB
350 MHz –71 dB
H3
H4
H2
(175 MHz) (262.5 MHz) (350 MHz)
–32 dB
–52 dB
–71 dB
H2
H3
Center: 228.5 MHz
35 MHz
H4
Span: 350 MHz
Figure 38. 87.5 MHz Harmonics @ 120 W CW
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
29
136–174 MHz COMPACT VHF BROADBAND REFERENCE CIRCUIT (MRF101AN) — 0.7 2.0 (1.8 cm 5.0 cm)
Table 20. 136–174 MHz VHF Broadband Performance (In NXP Reference Circuit, 50 ohm system)
VDD = 50 Vdc, IDQ = 100 mA, Pin = 0.79 W, CW
Frequency
(MHz)
Pout
(W)
Gps
(dB)
D
(%)
135
117
21.7
80.0
155
104
21.2
76.5
175
107
21.3
75.4
MRF101AN MRF101BN
30
RF Device Data
NXP Semiconductors
136–174 MHz COMPACT VHF BROADBAND REFERENCE CIRCUIT (MRF101AN) — 0.7 2.0 (1.8 cm 5.0 cm)
C3
C9
L2
C1
R1
C2
L1 VGS
C8
C7
C12
L3
L5
L4
C13
D113958
Q1
L6
C6
C14
B1
C4
VDS
C11
C5
aaa--032286
Note: Component number C10 is not used.
Figure 39. MRF101AN Compact Reference Circuit Component Layout and Assembly Example — 136–174 MHz
D113958
aaa--032285
Figure 40. MRF101AN Compact Reference Circuit Board
Table 21. MRF101AN Compact VHF Broadband Reference Circuit Component Designations and Values — 136–174 MHz
Part
Description
Part Number
Manufacturer
B1
Short RF Bead
2743019447
Fair-Rite
C1
39 pF Chip Capacitor
GQM2195C2E390GB12D
Murata
C2, C5, C6, C7, C8, C12
510 pF Chip Capacitor
GRM2165C2A511JA01D
Murata
C3
68 pF Chip Capacitor
GQM2195C2E680GB12D
Murata
C4
27 pF Chip Capacitor
GQM2195C2E270GB12D
Murata
C9
10 pF Chip Capacitor
GQM2195C2E100FB12D
Murata
C11
1 F Chip Capacitor
GJ821BR71H105KA12L
Murata
C13
0.01 F Chip Capacitor
GRM21BR72A103KA01B
Murata
C14
1 F Chip Capacitor
C3216X7R2A105K160AA
TDK
L1
22 nH Chip Inductor
0805WL220JT
ATC
L2
12 nH Chip Inductor
0805WL120JT
ATC
L3, L4, L6
68 nH Air Core Inductor
1812SMS-68NJLC
Coilcraft
L5
12 nH, 3 Turn Inductor
GA3094-ALC
Coilcraft
Q1
RF Power LDMOS Transistor
MRF101AN
NXP
R1
75 , 1/4 W Chip Resistor
SG73P2ATTD75R0F
KOA Speer
PCB
FR4 0.09 r = 4.8, 2 oz. Copper
D113958
MTL
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
31
TYPICAL CHARACTERISTICS — 136–174 MHz
COMPACT VHF BROADBAND REFERENCE CIRCUIT (MRF101AN)
VDD = 50 Vdc, Pin = 0.79 W, lDQ = 100 mA, CW
24
80
75
D
23
70
22
65
21
130
Gps
Pout, OUTPUT
POWER (WATTS)
Gps, POWER GAIN (dB)
25
85
D, DRAIN
EFFICIENCY (%)
26
120
20
110
19
Pout
18
17
135
140
150
145
155
160
100
165
170
90
175
f, FREQUENCY (MHz)
Figure 41. Power Gain, Drain Efficiency and CW Output
Power versus Frequency at a Constant Input Power
140
VDD = 50 Vdc, f = 155 MHz, CW
Pin = 0.79 W
100
80
Pin = 0.4 W
60
40
20
0
0
0.5
1
2
1.5
2.5
3
VDD = 50 Vdc, IDQ = 100 mA, CW
120
100
155 MHz
80
40
20
0
3.5
0
Gps, POWER GAIN (dB)
1.0
85
f = 155 MHz
80
135 MHz
175 MHz
23
75
70
65
60
22
D
21
0.8
Figure 43. CW Output Power versus
Input Power and Frequency
Gps
24
0.6
Pin, INPUT POWER (WATTS)
VDD = 50 Vdc, lDQ = 100 mA, CW
25
0.4
0.2
Figure 42. CW Output Power versus
Gate--Source Voltage at a Constant Input Power
26
175 MHz
60
VGS, GATE--SOURCE VOLTAGE (VOLTS)
27
f = 135 MHz
155 MHz
20
135 MHz
175 MHz
19
55
50
45
18
D, DRAIN EFFICIENCY (%)
120
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
140
40
17
20
40
60
80
100
120
35
140
Pout, OUTPUT POWER (WATTS)
Figure 44. Power Gain and Drain Efficiency versus
CW Output Power and Frequency
MRF101AN MRF101BN
32
RF Device Data
NXP Semiconductors
136–174 MHz COMPACT VHF BROADBAND REFERENCE CIRCUIT (MRF101AN)
f
(MHz)
Zsource
Zload
135
6.8 + j10.2
9.5 + j5.2
145
6.2 + j10.2
9.9 + j5.9
155
5.3 + j10.8
10.2 + j6.2
165
4.4 + j11.9
10.0 + j5.9
175
3.9 + j13.4
8.8 + j5.0
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
50
= Test circuit impedance as measured from
drain to ground.
Device
Under
Test
Input
Matching
Network
Zsource
Output
Matching
Network
50
Zload
Figure 45. Series Equivalent Source and Load Impedance — 136–174 MHz
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
33
230 MHz FIXTURE (MRF101AN) — 4.0 5.0 (10.2 cm 12.7 cm)
C13 C15
C7
C8
C14
C5
C6
C4
cut out
area
B1
C16
C17
L2
R1
C1
C12
C11
L1
L3
C2
C3
MRF101AN
Rev. 0
C9
C10
D113651
aaa--031939
Figure 46. MRF101AN Fixture Component Layout — 230 MHz
Table 22. MRF101AN Fixture Component Designations and Values — 230 MHz
Part
Description
Part Number
Manufacturer
B1
Long Ferrite Bead
2743021447
Fair-Rite
C1, C2, C10
18 pF Chip Capacitor
ATC100B180JT500XT
ATC
C3
43 pF Chip Capacitor
ATC100B430JT500XT
ATC
C4, C13
1000 pF Chip Capacitor
ATC800B102JT50XT
ATC
C5
0.1 F Chip Capacitor
GRM319R72A104KA01D
Murata
C6
10 nF Chip Capacitor
C1210C103J5GACTU
Kemet
C7
2.2 F Chip Capacitor
C3225X7R1H225K
TDK
C8
47 F, 16 V Tantalum Capacitor
T491D476K016AT
Kemet
C9
51 pF Chip Capacitor
ATC100B510JT500XT
ATC
C11
16 pF Chip Capacitor
ATC100B160JT500XT
ATC
C12
470 pF Chip Capacitor
ATC800B471JW50XT
ATC
C14
0.1 F Chip Capacitor
C1812104K1RACTU
Kemet
C15
2.2 F Chip Capacitor
C3225X7R2A225K
TDK
C16
2.2 F Chip Capacitor
HMK432B7225KM-T
Taiyo Yuden
C17
220 F, 100 V Electrolytic Capacitor
MCGPR100V227M16X26
Multicomp
L1
39 nH Chip Inductor
1812SMS-39NJLC
Coilcraft
L2
46 nH Chip Inductor
1010VS-46NME
Coilcraft
L3
17.5 nH, 4 Turn Inductor
GA3095-ALC
Coilcraft
R1
470 , 1/4 W Chip Resistor
CRCW1206470RFKEA
Vishay
PCB
Rogers AD255C, 0.030, r = 2.55, 2 oz. Copper D113651
MTL
MRF101AN MRF101BN
34
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS — 230 MHz FIXTURE, TC = 25_C (MRF101AN)
Pout, OUTPUT POWER (WATTS) PEAK
150
VDD = 50 Vdc, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
125
100
Pin = 0.9 W
75
50
Pin = 0.45 W
25
0
0
0.5
1.5
1
2
2.5
3
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 47. Output Power versus Gate--Source
Voltage at a Constant Input Power
51
49
47
45
43
41
VDD = 50 Vdc, f = 230 MHz, Pulse Width = 100 sec, 20% Duty Cycle
22
IDQ = 300 mA
200 mA
100 mA
20
50 mA
80
Gps
60
D
300 mA
200 mA
18
40
100 mA
16
39
100
20
D, DRAIN EFFICIENCY (%)
24
VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
Gps, POWER GAIN (dB)
Pout, OUTPUT POWER (dBm) PEAK
53
50 mA
37
15
18
21
24
27
30
14
33
3
Pin, INPUT POWER (dBm) PEAK
f
(MHz)
P1dB
(W)
P3dB
(W)
230
110
128
0
300
30
Pout, OUTPUT POWER (WATTS) PEAK
Figure 49. Power Gain and Drain Efficiency
versus Output Power and Quiescent Current
Figure 48. Output Power versus Input Power
Gps, POWER GAIN (dB)
23
Gps
22
80
70
60
21
50
D
20
40
19
30
18
20
17
3
30
24
10
300
IDQ = 100 mA, f = 230 MHz, Pulse Width = 100 sec, 20% Duty Cycle
22
Gps, POWER GAIN (dB)
VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
D, DRAIN EFFICIENCY (%)
24
20
50 V
18
45 V
40 V
16
14
VDD = 30 V
0
25
50
35 V
75
100
125
Pout, OUTPUT POWER (WATTS) PEAK
Pout, OUTPUT POWER (WATTS) PEAK
Figure 50. Power Gain and Drain Efficiency
versus Output Power
Figure 51. Power Gain versus Output Power
and Drain--Source Voltage
150
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
35
230 MHz FIXTURE (MRF101AN)
f
(MHz)
Zsource
Zload
230
2.1 + j5.9
5.5 + j3.2
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
50
= Test circuit impedance as measured from
drain to ground.
Device
Under
Test
Input
Matching
Network
Zsource
Output
Matching
Network
50
Zload
Figure 52. Series Equivalent Source and Load Impedance — 230 MHz
MRF101AN MRF101BN
36
RF Device Data
NXP Semiconductors
PACKAGE DIMENSIONS
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
37
MRF101AN MRF101BN
38
RF Device Data
NXP Semiconductors
MRF101AN MRF101BN
RF Device Data
NXP Semiconductors
39
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
Baseplate
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Nov. 2018
Initial release of data sheet
1
May 2019
Typical Performance table: updated values for 27 MHz, 50 MHz and 87.5–108 MHz reference circuits, p. 1
Load Mismatch/Ruggedness table, 40.68 MHz Pin: modulation signal corrected to CW, p. 1
Fig. 2, MTTF versus Junction Temperature — CW: added, p. 4
Added 13.56 MHz compact reference circuit, pp. 5–8
Added 27 MHz compact reference circuit, pp. 9–12
Table 13, row C12, C13: unit of measure/value in Description column changed from 10 nF to 0.01 F, p. 14
Added 50 MHz compact reference circuit, pp. 17–20
Added 81.36 MHz reference circuit, pp. 21–24
Added 87.5–108 MHz compact broadband reference circuit, pp. 25–29
Table 21, row C13: unit of measure/value in Description column changed from 10 nF to 0.01 F, p. 31
Fig. 42, CW Output Power versus Gate--Source Voltage at a Constant Input Power: added, p. 32
Package Outline Drawing: TO--220--3 package outline updated to Rev. A, pp. 37–39
MRF101AN MRF101BN
40
RF Device Data
NXP Semiconductors
How to Reach Us:
Home Page:
nxp.com
Web Support:
nxp.com/support
Information in this document is provided solely to enable system and software
implementers to use NXP products. There are no express or implied copyright licenses
granted hereunder to design or fabricate any integrated circuits based on the information
in this document. NXP reserves the right to make changes without further notice to any
products herein.
NXP makes no warranty, representation, or guarantee regarding the suitability of its
products for any particular purpose, nor does NXP assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation consequential or incidental damages. “Typical” parameters
that may be provided in NXP data sheets and/or specifications can and do vary in
different applications, and actual performance may vary over time. All operating
parameters, including “typicals,” must be validated for each customer application by
customer’s technical experts. NXP does not convey any license under its patent rights
nor the rights of others. NXP sells products pursuant to standard terms and conditions of
sale, which can be found at the following address: nxp.com/SalesTermsandConditions.
NXP and the NXP logo are trademarks of NXP B.V. All other product or service names
are the property of their respective owners.
E 2018–2019 NXP B.V.
MRF101AN MRF101BN
Document
Number:
RF
Device
Data MRF101AN
Rev. 1,Semiconductors
05/2019
NXP
41
工商网监
湘ICP备2023018690号
