NXP Semiconductors
Technical Data
Document Number: MRF13750H
Rev. 1, 01/2018
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These 750 W CW transistors are designed for industrial, scientific and
medical (ISM) applications in the 700 to 1300 MHz frequency range. The
transistors are capable of CW or pulse power in narrowband operation.
Typical Performance: VDD = 50 Vdc
Signal Type
Pout
(W)
915 (1)
CW
750
19.3
67.1
915 (2)
Pulse
(100 sec, 10% Duty Cycle)
850
20.5
69.2
1300 (3)
CW
700
17.2
56.0
Frequency
(MHz)
Gps
(dB)
D
(%)
MRF13750H
MRF13750HS
700–1300 MHz, 750 W CW, 50 V
RF POWER LDMOS TRANSISTORS
Load Mismatch/Ruggedness
Frequency
(MHz)
915 (2)
Signal Type
VSWR
Pin
(W)
Test
Voltage
Pulse
(100 sec, 10%
Duty Cycle)
> 10:1 at all
Phase
Angles
15.9 Peak
(3 dB
Overdrive)
50
Result
NI--1230H--4S
MRF13750H
No Device
Degradation
1. Measured in 915 MHz narrowband reference circuit (page 5).
2. Measured in 915 MHz narrowband production test fixture (page 11).
3. Measured in 1300 MHz narrowband reference circuit (page 8).
Features
Internally input pre--matched for ease of use
Device can be used single--ended or in a push--pull configuration
Characterized for 30 to 50 V
Suitable for linear applications with appropriate biasing
Integrated ESD protection
Recommended driver: MRFE6VS25GN (25 W)
Included in NXP product longevity program with assured supply for a
minimum of 15 years after launch
Typical Applications
915 MHz industrial heating/welding systems
1300 MHz particle accelerators
NI--1230S--4S
MRF13750HS
Gate A 3
1 Drain A
Gate B 4
2 Drain B
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
2017–2018 NXP B.V.
RF Device Data
NXP Semiconductors
MRF13750H MRF13750HS
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
–0.5, +105
Vdc
Gate--Source Voltage
VGS
–6.0, +10
Vdc
Operating Voltage
VDD
55, +0
Vdc
Storage Temperature Range
Tstg
–65 to +150
C
Case Operating Temperature Range
TC
–40 to +150
C
TJ
–40 to +225
C
PD
1333
6.67
W
W/C
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
CW: Case Temperature 82C, 700 W CW, 50 Vdc, IDQ(A+B) = 150 mA, 915 MHz
RJC
0.15
C/W
Thermal Impedance, Junction to Case
Pulse: Case Temperature 76C, 850 W Peak, 100 sec Pulse Width,
10% Duty Cycle, 50 Vdc, IDQ(A+B) = 200 mA, 915 MHz
ZJC
0.014
C/W
Operating Junction Temperature
Range (1,2)
Total Device Dissipation @ TC = 25C
Derate above 25C
Table 2. Thermal Characteristics
Characteristic
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2, passes 2500 V
Charge Device Model (per JESD22--C101)
C3, passes 1200 V
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
IGSS
—
—
1
Adc
105
—
—
Vdc
Off Characteristics (4)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 A)
V(BR)DSS
Zero Gate Voltage Drain Leakage Current
(VDS = 55 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 105 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Gate Threshold Voltage (4)
(VDS = 10 Vdc, ID = 275 Adc)
VGS(th)
1.3
1.72
2.3
Vdc
Gate Quiescent Voltage
(VDD = 50 Vdc, IDQ(A+B) = 200 mAdc, Measured in Functional Test)
VGS(Q)
1.7
2.2
2.7
Vdc
Drain--Source On--Voltage (4)
(VGS = 10 Vdc, ID = 2.8 Adc)
VDS(on)
0.1
0.23
0.6
Vdc
Reverse Transfer Capacitance
(VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.94
—
pF
Output Capacitance
(VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
63.8
—
pF
On Characteristics
Dynamic Characteristics (4,5)
1.
2.
3.
4.
5.
Continuous use at maximum temperature will affect MTTF.
MTTF calculator available at http://www.nxp.com/RF/calculators.
Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
Each side of device measured separately.
Part internally input pre--matched.
(continued)
MRF13750H MRF13750HS
2
RF Device Data
NXP Semiconductors
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In NXP Narrowband Production Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ(A+B) = 200 mA, Pout = 850 W Peak
(85 W Avg.), f = 915 MHz, 100 sec Pulse Width, 10% Duty Cycle
Power Gain
Gps
19.5
20.5
21.5
dB
Drain Efficiency
D
66.0
69.2
—
%
Table 5. Load Mismatch/Ruggedness (In NXP Narrowband Production Test Fixture, 50 ohm system) IDQ(A+B) = 200 mA
Frequency
(MHz)
915
Signal Type
VSWR
Pin
(W)
Pulse
(100 sec, 10% Duty Cycle)
> 10:1 at all
Phase Angles
15.9 Peak
(3 dB Overdrive)
Test Voltage, VDD
Result
50
No Device Degradation
Table 6. Ordering Information
Device
MRF13750HR5
MRF13750HSR5
Tape and Reel Information
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel
Package
NI--1230H--4S
NI--1230S--4S
MRF13750H MRF13750HS
RF Device Data
NXP Semiconductors
3
TYPICAL CHARACTERISTICS
1.08
Measured with 30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
1000
Coss
100
500 mA
1.04
1.02
750 mA
1000 mA
1
0.98
0.96
10
0.94
Crss
1
VDD = 50 Vdc
IDQ(A+B) = 200 mA
1.06
NORMALIZED VGS(Q)
C, CAPACITANCE (pF)
10000
0
10
30
20
40
0.92
–50
50
–25
0
25
50
75
100
TC, CASE TEMPERATURE (C)
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Note: Each side of device measured separately.
IDQ (mA)
Slope (mV/C)
Figure 2. Capacitance versus Drain--Source Voltage
200
–2.168
500
–1.992
750
–1.903
1000
–1.854
Figure 3. Normalized VGS versus Quiescent
Current and Case Temperature
108
ID = 17.3 Amps
VDD = 50 Vdc
MTTF (HOURS)
107
106
22.3 Amps
26.2 Amps
105
104
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (C)
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http:/www.nxp.com/RF/calculators.
Figure 4. MTTF versus Junction Temperature – CW
MRF13750H MRF13750HS
4
RF Device Data
NXP Semiconductors
915 MHz NARROWBAND REFERENCE CIRCUIT – 3.0 3.8 (7.6 cm 9.7 cm)
Table 7. 915 MHz Narrowband Performance (In NXP Reference Circuit, 50 ohm system)
VDD = 50 Vdc, IDQ(A+B) = 150 mA, Pin = 8.8 W
Frequency
(MHz)
Signal
Type
Pout
(W)
Gps
(dB)
D
(%)
915
CW
750
19.3
67.1
MRF13750H MRF13750HS
RF Device Data
NXP Semiconductors
5
915 MHz NARROWBAND REFERENCE CIRCUIT – 3.0 3.8 (7.6 cm 9.7 cm)
C13
C9 C11
C5 C7
R1
C1
D94455
C6 C8
R3
C2*
C3*
C4*
Q1
R11
R2
Rev. 0
Q2
C15
R4
R5
R7
C14
R9
R8
R10
R6 U1
C10 C12
*C2, C3 and C4 are mounted vertically.
Figure 5. MRF13750H Narrowband Reference Circuit Component Layout – 915 MHz
Table 8. MRF13750H Narrowband Reference Circuit Component Designations and Values – 915 MHz
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4, C5, C6, C11, C12
47 pF Chip Capacitor
ATC100B470JT500XT
ATC
C7, C8, C15
1 F Chip Capacitor
GRM21BR71H105KA12L
Murata
C9, C10
1000 pF Chip Capacitor
ATC100B102JT50XT
ATC
C13, C14
470 F, 100 V Electrolytic Capacitor
MCGPR100V477M16X32--RH
Multicomp
Q1
RF Power LDMOS Transistor
MRF13750H
NXP
Q2
NPN Bipolar Transistor
BC847ALT1G
ON Semiconductor
R1, R2
10 1/4 W Chip Resistor
CRCW120610R0JNEA
Vishay
R3
5 k Multi--turn Cermet Trimmer Potentiometer
3224W--1--502E
Bourns
R4
20 k 1/10 W Chip Resistor
RR1220P--203--B--T5
Susumu
R5
4.7 k 1/10 W Chip Resistor
RR1220P--472--D
Susumu
R6, R8
1.2 k 1/8 W Chip Resistor
CRCW08051K20FKEA
Vishay
R7
10 1/8 W Chip Resistor
CRCW080510R0FKEA
Vishay
R9
2.2 k 1/8 W Chip Resistor
CRCW08052K20JNEA
Vishay
R10
4.7 k 1/2 W Chip Resistor
CRCW12104K70FKEA
Vishay
R11
2 1/2 W Chip Resistor
ERJ--14YJ2R0U
Panasonic
U1
Voltage Regulator 5 V, Micro8
LP2951ACDMR2G
ON Semiconductor
PCB
Rogers TC600, 0.025”, r = 6.15
D94455
MTL
MRF13750H MRF13750HS
6
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS – 915 MHz
NARROWBAND REFERENCE CIRCUIT
800
600
500
400
300
200
100
0
0
2
4
6
8
10
12
14
16
90
VDD = 50 Vdc, IDQ = 150 mA, f = 915 MHz
22
700
Gps, POWER GAIN (dB)
Pout, OUTPUT POWER (WATTS)
23
VDD = 50 Vdc, IDQ = 150 mA, f = 915 MHz
80
Gps
21
70
60
20
19
50
D
18
40
17
30
16
20
15
0
100
200
300
Pin, INPUT POWER (WATTS)
400
500
600
700
800
D, DRAIN EFFICIENCY (%)
900
10
900
Pout, OUTPUT POWER (WATTS)
f
(MHz)
P1dB
(W)
P3dB
(W)
915
690
800
Figure 7. Power Gain and Drain Efficiency
versus CW Output Power
Figure 6. CW Output Power versus Input Power
f
MHz
Zsource
Zload
915
0.58 + j0.24
0.59 + j1.19
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
50
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Zsource
50
Zload
Figure 8. Narrowband Series Equivalent Source and Load Impedance – 915 MHz
MRF13750H MRF13750HS
RF Device Data
NXP Semiconductors
7
1300 MHz NARROWBAND REFERENCE CIRCUIT – 3.0 3.9 (7.6 cm 9.9 cm)
Table 9. 1300 MHz Narrowband Performance (In NXP Reference Circuit, 50 ohm system)
VDD = 50 Vdc, IDQ(A+B) = 150 mA, Pin = 11 W
Frequency
(MHz)
Signal
Type
Pout
(W)
Gps
(dB)
D
(%)
1300
CW
700
17.2
56.0
MRF13750H MRF13750HS
8
RF Device Data
NXP Semiconductors
1300 MHz NARROWBAND REFERENCE CIRCUIT – 3.0 3.9 (7.6 cm 9.9 cm)
C12
C8
C10
C4
C6
R1
C2
Q1
C1
C3
R11
R2
Rev. 0
D100209
C7
R4 C14 R7 C5
R3
R5
R6
Q2
R9
R8
C13
C9
C11
R10
U1
Figure 9. MRF13750H Narrowband Reference Circuit Component Layout – 1300 MHz
Table 10. MRF13750H Narrowband Reference Circuit Component Designations and Values – 1300 MHz
Part
Description
Part Number
Manufacturer
C1, C4, C5, C10, C11
24 pF Chip Capacitor
ATC100B240JT500XT
ATC
C2, C3
18 pF Chip Capacitor
ATC100B180JT500XT
ATC
C6, C7, C14
1 F Chip Capacitor
GRM21BR71H105KA12L
Murata
C8, C9
1000 pF Chip Capacitor
ATC100B102JT50XT
ATC
C12, C13
470 F, 100 V Electrolytic Capacitor
MCGPR100V477M16X32-RH
Multicomp
R1, R2
10 , 1/4 W Chip Resistor
CRCW120610R0JNEA
Vishay
R3
5 k Multi--turn Cermet Trimmer Potentiometer
3224W-1-502E
Bourns
R4
20 k, 1/8 W Chip Resistor
CRCW080520K0FKEA
Vishay
R5
4.7 k, 1/8 W Chip Resistor
CRCW08054K70FKEA
Vishay
R6, R8
1.2 k, 1/8 W Chip Resistor
CRCW08051K20FKEA
Vishay
R7
10 , 1/8 W Chip Resistor
CRCW080510R0FKEA
Vishay
R9
2.2 k, 1/8 W Chip Resistor
CRCW08052K20JNEA
Vishay
R10
4.7 k, 1/2 W Chip Resistor
CRCW12104K70FKEA
Vishay
R11
3.3 , 1/2 W Chip Resistor
ERJ-14YJ3R3U
Panasonic
Q1
RF Power LDMOS Transistor
MRF13750H
NXP
Q2
NPN Bipolar Transistor
BC847ALT1G
ON Semiconductor
U1
Voltage Regulator 5 V, Micro8
LP2951ACDMR2G
ON Semiconductor
PCB
Arlon TC350, 0.020, r = 3.5
D100209
MTL
MRF13750H MRF13750HS
RF Device Data
NXP Semiconductors
9
TYPICAL CHARACTERISTICS – 1300 MHz
NARROWBAND REFERENCE CIRCUIT
20
700
60
55
19.5
600
500
400
300
200
100
Gps
19
18.5
45
18
40
17.5
4
8
12
16
20
35
D
17
30
16.5
0
0
50
16
25
VDD = 50 Vdc, IDQ(A+B) = 150 mA, f = 1300 MHz
0
100
200
Pin, INPUT POWER (WATTS)
300
400
500
600
D, DRAIN EFFICIENCY (%)
VDD = 50 Vdc, IDQ(A+B) = 150 mA, f = 1300 MHz
Gps, POWER GAIN (dB)
Pout, OUTPUT POWER (WATTS)
800
700
20
800
Pout, OUTPUT POWER (WATTS)
f
(MHz)
P1dB
(W)
P3dB
(W)
1300
600
710
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
Figure 10. CW Output Power versus Input Power
f
MHz
Zsource
Zload
1300
0.64 + j1.92
0.39 + j0.92
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
50
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Zsource
50
Zload
Figure 12. Narrowband Series Equivalent Source and Load Impedance – 1300 MHz
MRF13750H MRF13750HS
10
RF Device Data
NXP Semiconductors
915 MHz NARROWBAND PRODUCTION TEST FIXTURE – 4.0 6.0 (10.2 cm 15.2 cm)
C1
C3
C24
C5
C26
B1
Rev. 0
C7
D87851
Coax1
C28
C22
C12
Coax3
L1
R1
C9
C14*
CUT OUT AREA
C11
C10
R2
Coax2
C13
C8
L2
Coax4
C23
B2
C2
C16*
C17*
C15* C18*
C19*
C20*
C21*
C25
C4
C6
C27
C29
*C14, C15, C16, C17, C18, C19, C20 and C21 are mounted vertically.
Figure 13. MRF13750H Narrowband Production Test Fixture Component Layout – 915 MHz
Table 11. MRF13750H Narrowband Production Test Fixture Component Designations and Values – 915 MHz
Part
Description
Part Number
Manufacturer
B1, B2
RF Bead, Short
2743019447
Fair--Rite
C1, C2
22 F, 35 V Tantalum Capacitor
T491X226K035AT
Kemet
C3, C4
2.2 F Chip Capacitor
C1825C225J5RAC
Kemet
C5, C6
0.1 F Chip Capacitor
CDR33BX104AKWS
AVX
C7, C8, C22, C23
36 pF Chip Capacitor
ATC100B360JT500XT
ATC
C9, C10
10 pF Chip Capacitor
ATC100B100JT500XT
ATC
C11
13 pF Chip Capacitor
ATC100B130JT500XT
ATC
C12, C13
12 pF Chip Capacitor
ATC100B120JT500XT
ATC
C14, C15
7.5 pF Chip Capacitor
ATC100B7R5CT500XT
ATC
C16, C17, C18, C19, C20, C21
36 pF Chip Capacitor
ATC100B360JT500XT
ATC
C24, C25
0.01 F Chip Capacitor
C1825C103K1GAC--TU
Kemet
C26, C27, C28, C29
470 F, 63 V Electrolytic Capacitor
MCGPR63V477M13X26--RH
Multicomp
Coax1, 2, 3, 4
25 , Semi Rigid Coax, 2.2 Shield Length
UT--141C--25
Micro Coax
L1, L2
5 nH Inductor
A02TKLC
Coilcraft
R1, R2
10 , 3/4 W Chip Resistor
CRCW201010R0FKEF
Vishay
PCB
Arlon, AD255A, 0.03, r = 2.55
D87851
MTL
MRF13750H MRF13750HS
RF Device Data
NXP Semiconductors
11
TYPICAL CHARACTERISTICS – 915 MHz, TC = 25_C
PRODUCTION TEST FIXTURE
Pout, OUTPUT POWER (WATTS) PEAK
1200
VDD = 50 Vdc, f = 915 MHz
Pulse Width = 100 msec, 10% Duty Cycle
1000
Pin = 8.8 W
800
600
Pin = 4.4 W
400
200
0
0.5
0
1
1.5
2
2.5
3
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 14. Output Power versus Gate--Source
Voltage at a Constant Input Power
23
58
56
54
52
50
48
46
44
26
30
32
34
36
38
40
42
21
20
600 mA
19
17
200 mA
400 mA
1000 mA
600 mA
50
30
800 mA
20
10
0
1000
100
Pin, INPUT POWER (dBm)
60
40
400 mA
200 mA
18
80
70
D
15
30
44
Gps
IDQ(A+B) = 1000 mA
800 mA
22
16
28
90
VDD = 50 Vdc, f = 915 MHz
Pulse Width = 100 sec, 10% Duty Cycle
D, DRAIN EFFICIENCY (%)
60
24
VDD = 50 Vdc, IDQ(A+B) = 200 mA, f = 915 MHz
Pulse Width = 100 msec, 10% Duty Cycle
Gps, POWER GAIN (dB)
Pout, OUTPUT POWER (dBm) PEAK
62
Pout, OUTPUT POWER (WATTS) PEAK
f
(MHz)
P1dB
(W)
P3dB
(W)
915
802
912
Figure 16. Power Gain and Drain Efficiency
versus Output Power and Quiescent Current
Figure 15. Output Power versus Input Power
90
80
22
70
21
60
20
19
18
Gps
50
TC = –40_C
40
25_C
D
17 85_C
16
15
20
85_C
25_C
–40_C
30
20
10
100
24
23
22
0
1000
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)
23
VDD = 50 Vdc, IDQ(A+B) = 200 mA, f = 915 MHz
Pulse Width = 100 sec, 10% Duty Cycle
D, DRAIN EFFICIENCY (%)
24
IDQ(A+B) = 200 mA, f = 915 MHz
Pulse Width = 100 sec, 10% Duty Cycle
21
20
19
18
17
16
15
14
13
12
45 V
50 V
40 V
35 V
VDD = 30 V
0
200
400
600
800
Pout, OUTPUT POWER (WATTS) PEAK
Pout, OUTPUT POWER (WATTS) PEAK
Figure 17. Power Gain and Drain Efficiency
versus Output Power
Figure 18. Power Gain versus Output Power
and Drain--Source Voltage
1000
MRF13750H MRF13750HS
12
RF Device Data
NXP Semiconductors
915 MHz NARROWBAND PRODUCTION TEST FIXTURE
f
MHz
Zsource
Zload
915
3.46 – j1.76
2.39 + j3.92
Zsource = Test fixture impedance as measured from
gate to gate, balanced configuration.
Zload
50
Input
Matching
Network
= Test fixture impedance as measured from
drain to drain, balanced configuration.
+
-Zsource
Device
Under
Test
--
Output
Matching
Network
50
+
Zload
Figure 19. Narrowband Series Equivalent Source and Load Impedance – 915 MHz
MRF13750H MRF13750HS
RF Device Data
NXP Semiconductors
13
PACKAGE DIMENSIONS
MRF13750H MRF13750HS
14
RF Device Data
NXP Semiconductors
MRF13750H MRF13750HS
RF Device Data
NXP Semiconductors
15
MRF13750H MRF13750HS
16
RF Device Data
NXP Semiconductors
MRF13750H MRF13750HS
RF Device Data
NXP Semiconductors
17
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Dec. 2017
Initial release of data sheet
1
Jan. 2018
On Characteristics, VGS(Q): Min and Max values updated to reflect recent test results of the device, p. 2
MRF13750H MRF13750HS
18
RF Device Data
NXP Semiconductors
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MRF13750H MRF13750HS
Document
Number:
RF
Device
Data MRF13750H
Rev. 1,Semiconductors
01/2018
NXP
19