Freescale Semiconductor
Technical Data
Document Number: MRF1535N
Rev. 13, 6/2009
RF Power Field Effect Transistors
MRF1535NT1
MRF1535FNT1
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices
make them ideal for large - signal, common source amplifier applications in
12.5 volt mobile FM equipment.
• Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 35 Watts
Power Gain — 13.5 dB
Efficiency — 55%
• Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 520 MHz, 2 dB Overdrive
Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Broadband - Full Power Across the Band: 135 - 175 MHz
400 - 470 MHz
450 - 520 MHz
• 200_C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
520 MHz, 35 W, 12.5 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1264 - 10, STYLE 1
TO - 272 - 6 WRAP
PLASTIC
MRF1535NT1
CASE 1264A - 03, STYLE 1
TO - 272 - 6
PLASTIC
MRF1535FNT1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +40
Vdc
Gate - Source Voltage
VGS
± 20
Vdc
ID
6
Adc
PD
135
0.50
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value(2)
Unit
RθJC
0.90
°C/W
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
(1)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD22 - A113, IPC/JEDEC J - STD - 020
1. Calculated based on the formula PD =
Rating
Package Peak Temperature
Unit
3
260
°C
TJ – TC
RθJC
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF1535NT1 MRF1535FNT1
1
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Drain - Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 μAdc)
V(BR)DSS
60
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 10 Vdc, VDS = 0 Vdc)
IGSS
—
—
0.3
μAdc
Gate Threshold Voltage
(VDS = 12.5 Vdc, ID = 400 μA)
VGS(th)
1
—
2.6
Vdc
Drain - Source On - Voltage
(VGS = 5 Vdc, ID = 0.6 A)
RDS(on)
—
—
0.7
Ω
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2.0 Adc)
VDS(on)
—
—
1
Vdc
Input Capacitance (Includes Input Matching Capacitance)
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Ciss
—
—
250
pF
Output Capacitance
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Coss
—
—
150
pF
Reverse Transfer Capacitance
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Crss
—
—
20
pF
Gps
—
13.5
—
dB
η
—
55
—
%
Off Characteristics
On Characteristics
Dynamic Characteristics
RF Characteristics (In Freescale Test Fixture)
Common - Source Amplifier Power Gain
(VDD = 12.5 Vdc, Pout = 35 Watts, IDQ = 500 mA)
f = 520 MHz
Drain Efficiency
(VDD = 12.5 Vdc, Pout = 35 Watts, IDQ = 500 mA)
f = 520 MHz
MRF1535NT1 MRF1535FNT1
2
RF Device Data
Freescale Semiconductor
VGG
+
C11
C10
R4
B1
C23
R3
+
C21
C22
VDD
L5
C9
R2
RF
INPUT
N1 C1
R1
Z1
C2
L1
C3
Z2
C4
B1
C1, C9, C20, C23
C2, C5
C3, C15
C4, C6, C19
C7
C8
C10, C21
C11, C22
C12, C13
C14
C16
C17
C18
L1
L2
L3
Z3
C5
L2
C6
Z4
Z5
C7
DUT
Z6
Z7
C12
C8
Ferroxcube #VK200
330 pF, 100 mil Chip Capacitors
0 to 20 pF Trimmer Capacitors
33 pF, 100 mil Chip Capacitors
18 pF, 100 mil Chip Capacitors
160 pF, 100 mil Chip Capacitor
240 pF, 100 mil Chip Capacitor
10 μF, 50 V Electrolytic Capacitors
470 pF, 100 mil Chip Capacitors
150 pF, 100 mil Chip Capacitors
110 pF, 100 mil Chip Capacitor
68 pF, 100 mil Chip Capacitor
120 pF, 100 mil Chip Capacitor
51 pF, 100 mil Chip Capacitor
17.5 nH, Coilcraft #A05T
5 nH, Coilcraft #A02T
1 Turn, #26 AWG, 0.250″ ID
C13
Z8
C14
L4
L5
N1, N2
R1
R2
R3
R4
Z1
Z2
Z3
Z4
Z5, Z6
Z7
Z8
Z9
Z10
Board
C15
Z9
L3
L4
C16
C17
C18
Z10
RF
OUTPUT
N2
C20
C19
1 Turn, #26 AWG, 0.240″ ID
4 Turn, #24 AWG, 0.180″ ID
Type N Flange Mounts
6.5 Ω, 1/4 W Chip Resistor
39 Ω Chip Resistor (0805)
1.2 kΩ, 1/8 W Chip Resistor
33 kΩ, 1/4 W Chip Resistor
0.970″ x 0.080″ Microstrip
0.380″ x 0.080″ Microstrip
0.190″ x 0.080″ Microstrip
0.160″ x 0.080″ Microstrip
0.110″ x 0.200″ Microstrip
0.490″ x 0.080″ Microstrip
0.250″ x 0.080″ Microstrip
0.320″ x 0.080″ Microstrip
0.240″ x 0.080″ Microstrip
Glass Teflon®, 31 mils
Figure 1. 135 - 175 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 135 - 175 MHz
0
155 MHz
135 MHz
175 MHz
50
40
IRL, INPUT RETURN LOSS (dB)
Pout , OUTPUT POWER (WATTS)
60
30
20
10
−5
155 MHz
135 MHz
175 MHz
−10
−15
VDD = 12.5 Vdc
VDD = 12.5 Vdc
0
−20
0
1
2
3
Pin, INPUT POWER (WATTS)
Figure 2. Output Power versus Input Power
4
10
20
30
40
50
60
Pout, OUTPUT POWER (WATTS)
Figure 3. Input Return Loss versus Output Power
MRF1535NT1 MRF1535FNT1
RF Device Data
Freescale Semiconductor
3
TYPICAL CHARACTERISTICS, 135 - 175 MHz
19
80
VDD = 12.5 Vdc
155 MHz
h, DRAIN EFFICIENCY (%)
18
GAIN (dB)
17
16
15
14
13
155 MHz
12
10
20
30
60
175 MHz
50
40
135 MHz
40
30
50
60
10
20
30
Pout, OUTPUT POWER (WATTS)
40
50
60
80
Figure 5. Drain Efficiency versus Output Power
80
45
h, DRAIN EFFICIENCY (%)
50
155 MHz
175 MHz
40
135 MHz
35
155 MHz
70
175 MHz
60
135 MHz
50
VDD = 12.5 Vdc
Pin = 30 dBm
VDD = 12.5 Vdc
Pin = 30 dBm
30
40
200
400
600
800
1000
1200
200
400
IDQ, BIASING CURRENT (mA)
600
800
1000
1200
IDQ, BIASING CURRENT (mA)
Figure 6. Output Power versus Biasing Current
Figure 7. Drain Efficiency versus Biasing Current
70
80
60
50
h, DRAIN EFFICIENCY (%)
Pout , OUTPUT POWER (WATTS)
70
Pout, OUTPUT POWER (WATTS)
Figure 4. Gain versus Output Power
Pout , OUTPUT POWER (WATTS)
135 MHz
VDD = 12.5 Vdc
175 MHz
11
70
155 MHz
175 MHz
135 MHz
40
30
135 MHz
70
175 MHz
60
155 MHz
50
20
IDQ = 250 mA
Pin = 30 dBm
IDQ = 250 mA
Pin = 30 dBm
10
10
11
12
13
14
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 8. Output Power versus Supply Voltage
40
15
10
11
12
13
14
15
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 9. Drain Efficiency versus Supply Voltage
MRF1535NT1 MRF1535FNT1
4
RF Device Data
Freescale Semiconductor
B1
VGG
VDD
C14
C13
+
C12
C11
R3
R2
C25
C24
L1
C23
+
C22
C10
R1
DUT
RF
INPUT
N1 C1
Z1
C2
Z2
C3
B1
C1
C2
C3
C4
C5
C6, C7
C8, C15, C16
C9
C10, C14, C25
C11, C22
C12, C24
C13, C23
C17, C18
C19
C20
Z3
C4
Z4
Z5
C5
C6
C7
Z6
C8
Z7
C9
C15
Ferroxcube VK200
160 pF, 100 mil Chip Capacitor
3 pF, 100 mil Chip Capacitor
3.6 pF, 100 mil Chip Capacitor
2.2 pF, 100 mil Chip Capacitor
10 pF, 100 mil Chip Capacitor
16 pF, 100 mil Chip Capacitors
27 pF, 100 mil Chip Capacitors
43 pF, 100 mil Chip Capacitor
160 pF, 100 mil Chip Capacitors
10 μF, 50 V Electrolytic Capacitors
1,200 pF, 100 mil Chip Capacitors
0.1 μF, 100 mil Chip Capacitors
24 pF, 100 mil Chip Capacitors
160 pF, 100 mil Chip Capacitor
8.2 pF, 100 mil Chip Capacitor
C21
L1
N1, N2
R1
R2
R3
Z1
Z2
Z3
Z4
Z5, Z8
Z6, Z7
Z9
Z10
Board
Z9
Z8
C16
C17
C18
C19
N2
Z10
C20
RF
OUTPUT
C21
1.8 pF, 100 mil Chip Capacitor
47.5 nH, 5 Turn, Coilcraft
Type N Flange Mounts
500 Ω Chip Resistor (0805)
1 kΩ Chip Resistor (0805)
33 kΩ, 1/8 W Chip Resistor
0.480″ x 0.080″ Microstrip
1.070″ x 0.080″ Microstrip
0.290″ x 0.080″ Microstrip
0.160″ x 0.080″ Microstrip
0.120″ x 0.080″ Microstrip
0.120″ x 0.223″ Microstrip
1.380″ x 0.080″ Microstrip
0.625″ x 0.080″ Microstrip
Glass Teflon®, 31 mils
Figure 10. 450 - 520 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 450 - 520 MHz
60
0
IRL, INPUT RETURN LOSS (dB)
Pout , OUTPUT POWER (WATTS)
450 MHz
50
500 MHz
40
470 MHz
520 MHz
30
20
10
VDD = 12.5 Vdc
−5
450 MHz
−10
470 MHz
520 MHz
500 MHz
VDD = 12.5 Vdc
0
−15
0
1
2
3
4
5
6
0
10
20
30
40
50
60
Pin, INPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
Figure 11. Output Power versus Input Power
Figure 12. Input Return Loss versus Output Power
MRF1535NT1 MRF1535FNT1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS, 450 - 520 MHz
15
70
520 MHz
VDD = 12.5 Vdc
470 MHz
GAIN (dB)
13
h, DRAIN EFFICIENCY (%)
14
450 MHz
12
11
60
520 MHz
50
40
VDD = 12.5 Vdc
500 MHz
9
20
0
10
20
30
40
50
60
0
10
20
Pout, OUTPUT POWER (WATTS)
30
40
50
60
Pout, OUTPUT POWER (WATTS)
Figure 13. Gain versus Output Power
Figure 14. Drain Efficiency versus Output Power
50
80
450 MHz
45
h, DRAIN EFFICIENCY (%)
Pout , OUTPUT POWER (WATTS)
450 MHz
470 MHz
30
10
470 MHz
500 MHz
40
520 MHz
35
70
500 MHz
520 MHz
60
450 MHz
470 MHz
50
VDD = 12.5 Vdc
Pin = 34 dBm
VDD = 12.5 Vdc
Pin = 34 dBm
30
40
200
400
600
800
1000
1200
200
400
IDQ, BIASING CURRENT (mA)
600
800
1000
1200
IDQ, BIASING CURRENT (mA)
Figure 15. Output Power versus Biasing Current
Figure 16. Drain Efficiency versus Biasing Current
70
80
60
h, DRAIN EFFICIENCY (%)
Pout , OUTPUT POWER (WATTS)
500 MHz
50
450 MHz
40
470 MHz
30
520 MHz
500 MHz
70
520 MHz
60
450 MHz
470 MHz
500 MHz
50
IDQ = 250 mA
Pin = 34 dBm
20
IDQ = 250 mA
Pin = 34 dBm
10
40
10
11
12
13
14
15
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 17. Output Power versus Supply Voltage
10
11
12
13
14
15
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 18. Drain Efficiency versus Supply Voltage
MRF1535NT1 MRF1535FNT1
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
MTTF FACTOR (HOURS X AMPS2)
1010
109
108
107
90 100 110 120 130 140 150 160 170 180 190 200 210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 19. MTTF Factor versus Junction Temperature
MRF1535NT1 MRF1535FNT1
RF Device Data
Freescale Semiconductor
7
Zo = 10 Ω
Zin
ZOL*
f = 175 MHz
f = 135 MHz
f = 175 MHz f = 135 MHz
f = 520 MHz
ZOL*
f = 450 MHz
f = 450 MHz
f = 520 MHz
Zin
Zin
VDD = 12.5 V, IDQ = 250 mA, Pout = 35 W
VDD = 12.5 V, IDQ = 500 mA, Pout = 35 W
f
MHz
Zin
Ω
ZOL*
Ω
f
MHz
Zin
Ω
ZOL*
Ω
135
5.0 + j0.9
1.7 + j0.2
450
0.8 - j1.4
1.0 - j0.8
155
5.0 + j0.9
1.7 + j0.2
470
0.9 - j1.4
1.1 - j0.6
175
3.0 + j1.0
1.3 + j0.1
500
1.0 - j1.4
1.1 - j0.6
520
0.9 - j1.4
1.1 - j0.5
= Complex conjugate of source
impedance.
Zin
ZOL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and ηD > 50 %.
= Complex conjugate of source
impedance.
ZOL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and ηD > 50 %.
Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
Input
Matching
Network
Output
Matching
Network
Device
Under Test
Z
in
Z
*
OL
Figure 20. Series Equivalent Input and Output Impedance
MRF1535NT1 MRF1535FNT1
8
RF Device Data
Freescale Semiconductor
Table 5. Common Source Scattering Parameters (VDD = 12.5 Vdc)
IDQ = 250 mA
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
50
0.89
- 173
8.496
83
0.014
- 26
0.76
- 170
100
0.90
- 175
3.936
72
0.014
- 14
0.79
- 170
150
0.91
- 175
2.429
63
0.011
- 23
0.82
- 170
200
0.92
- 175
1.627
57
0.010
- 44
0.86
- 170
250
0.94
- 176
1.186
53
0.007
- 16
0.88
- 170
300
0.95
- 176
0.888
49
0.005
- 44
0.91
- 171
350
0.96
- 176
0.686
48
0.005
36
0.92
- 170
400
0.96
- 176
0.568
44
0.005
-1
0.94
- 171
450
0.97
- 176
0.457
44
0.004
49
0.94
- 172
500
0.97
- 176
0.394
44
0.003
- 51
0.95
- 171
550
0.98
- 176
0.332
42
0.001
31
0.95
- 173
600
0.98
- 177
0.286
41
0.013
99
0.94
- 173
IDQ = 1.0 A
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
50
0.90
- 173
8.49
83
0.006
- 39
0.86
- 176
100
0.90
- 175
3.92
72
0.009
-5
0.86
- 176
150
0.91
- 175
2.44
63
0.006
7
0.87
- 176
200
0.92
- 175
1.62
57
0.008
21
0.88
- 175
250
0.94
- 176
1.19
53
0.006
8
0.89
- 174
300
0.95
- 176
0.89
48
0.008
3
0.89
- 174
350
0.96
- 176
0.69
48
0.007
48
0.91
- 174
400
0.96
- 176
0.57
44
0.004
41
0.93
- 173
450
0.97
- 176
0.46
44
0.004
43
0.93
- 173
500
0.97
- 176
0.39
44
0.003
57
0.94
- 173
550
0.98
- 176
0.33
41
0.006
62
0.94
- 174
600
0.98
- 177
0.28
41
0.009
96
0.93
- 173
IDQ = 2.0 A
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
50
0.94
- 176
9.42
88
0.005
- 72
0.89
- 177
100
0.94
- 178
4.56
82
0.005
4
0.89
- 177
150
0.94
- 178
2.99
78
0.003
7
0.89
- 177
200
0.94
- 178
2.14
74
0.005
17
0.90
- 176
250
0.95
- 178
1.67
71
0.004
40
0.90
- 175
300
0.95
- 178
1.32
67
0.007
35
0.91
- 175
350
0.95
- 178
1.08
67
0.005
57
0.92
- 174
400
0.96
- 178
0.93
63
0.003
50
0.93
- 173
450
0.96
- 178
0.78
62
0.007
68
0.93
- 173
500
0.96
- 177
0.68
61
0.004
99
0.94
- 173
550
0.97
- 177
0.59
58
0.008
78
0.93
- 175
600
0.97
- 178
0.51
57
0.009
92
0.92
- 174
MRF1535NT1 MRF1535FNT1
RF Device Data
Freescale Semiconductor
9
APPLICATIONS INFORMATION
DESIGN CONSIDERATIONS
This device is a common - source, RF power, N - Channel
enhancement mode, Lateral Metal - Oxide Semiconductor
Field - Effect Transistor (MOSFET). Freescale Application
Note AN211A, “FETs in Theory and Practice”, is suggested
reading for those not familiar with the construction and characteristics of FETs.
This surface mount packaged device was designed primarily for VHF and UHF mobile power amplifier applications.
Manufacturability is improved by utilizing the tape and reel
capability for fully automated pick and placement of parts.
However, care should be taken in the design process to insure proper heat sinking of the device.
The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from
thermal runaway, and the ability to withstand severely mismatched loads without suffering damage.
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between all three terminals. The metal oxide gate structure
determines the capacitors from gate - to - drain (Cgd), and
gate - to - source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance
from drain - to - source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer
(Crss) capacitances on data sheets. The relationships between the inter - terminal capacitances and those given on
data sheets are shown below. The Ciss can be specified in
two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and zero
volts at the gate.
In the latter case, the numbers are lower. However, neither
method represents the actual operating conditions in RF applications.
Drain
Cgd
Gate
Cds
Ciss = Cgd + Cgs
Coss = Cgd + Cds
Crss = Cgd
Cgs
Source
DRAIN CHARACTERISTICS
One critical figure of merit for a FET is its static resistance
in the full - on condition. This on - resistance, RDS(on), occurs
in the linear region of the output characteristic and is specified at a specific gate - source voltage and drain current. The
drain - source voltage under these conditions is termed
VDS(on). For MOSFETs, VDS(on) has a positive temperature
coefficient at high temperatures because it contributes to the
power dissipation within the device.
BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not
recommended and may result in possible damage to the device.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide.
The DC input resistance is very high - on the order of 109 Ω
— resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage to
the gate greater than the gate - to - source threshold voltage,
VGS(th).
Gate Voltage Rating — Never exceed the gate voltage
rating. Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.
Gate Termination — The gates of these devices are essentially capacitors. Circuits that leave the gate open - circuited or floating should be avoided. These conditions can
result in turn - on of the devices due to voltage build - up on
the input capacitor due to leakage currents or pickup.
Gate Protection — These devices do not have an internal
monolithic zener diode from gate - to - source. If gate protection is required, an external zener diode is recommended.
Using a resistor to keep the gate - to - source impedance low
also helps dampen transients and serves another important
function. Voltage transients on the drain can be coupled to
the gate through the parasitic gate - drain capacitance. If the
gate - to - source impedance and the rate of voltage change
on the drain are both high, then the signal coupled to the gate
may be large enough to exceed the gate - threshold voltage
and turn the device on.
DC BIAS
Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the
source. RF power FETs operate optimally with a quiescent
drain current (IDQ), whose value is application dependent.
This device was characterized at IDQ = 500 mA, which is the
suggested value of bias current for typical applications. For
special applications such as linear amplification, IDQ may
have to be selected to optimize the critical parameters.
The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may
require a more elaborate bias system.
GAIN CONTROL
Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate,
thus facilitating applications such as manual gain control,
ALC/AGC and modulation systems. This characteristic is
very dependent on frequency and load line.
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AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for this device. For examples
see Freescale Application Note AN721, “Impedance
Matching Networks Applied to RF Power Transistors.”
Large - signal impedances are provided, and will yield a good
first pass approximation.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of this device
yields a device capable of self oscillation. Stability may be
achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series
with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region.
Two - port stability analysis with this device’s
S - parameters provides a useful tool for selection of loading
or feedback circuitry to assure stable operation. See Freescale Application Note AN215A, “RF Small - Signal Design
Using Two - Port Parameters” for a discussion of two port
network theory and stability.
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PACKAGE DIMENSIONS
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PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
• AN211A: Field Effect Transistors in Theory and Practice
• AN215A: RF Small - Signal Design Using Two - Port Parameters
• AN721: Impedance Matching Networks Applied to RF Power Transistors
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages
• AN3789: Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
11
Feb. 2008
Description
• Changed DC Bias IDQ value from 150 to 500 to match Functional Test IDQ specification, p. 10
• Replaced Case Outline 1264 - 09 with 1264 - 10, Issue L, p. 1, 12 - 14. Removed Drain - ID label from top
view and View Y - Y. Corrected cross hatch pattern and its dimensions (D2 and E2) on source contact.
Renamed E2 with E3. Added Pin 7 designation. Corrected positional tolerance for bolt hole radius. Added
JEDEC Standard Package Number.
• Replaced Case Outline 1264A - 02 with 1264A - 03, Issue D, p. 1, 15 - 17. Removed Drain - ID label from
View Y - Y. Corrected cross hatch pattern and its dimensions (D2 and E2) on source contact (Changed D2
and E2 dimensions from basic to .604 Min and .162 Min, respectively). Added dimension E3. Added Pin 7
designation. Corrected positional tolerance for bolt hole radius. Added JEDEC Standard Package Number.
• Added Product Documentation and Revision History, p. 18
12
June 2008
• Corrected specified performance values for power gain and efficiency on p. 1 to match typical
performance values in the functional test table on p. 2
13
June 2009
• Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing
process as described in Product and Process Change Notification number, PCN13516, p. 1
• Added AN1907, Solder Reflow Attach Method for High Power RF Devices in Plastic Packages and
AN3789, Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages to Product
Documentation, Application Notes, p. 18
• Added Electromigration MTTF Calculator availability to Product Software, p. 18
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Number:
RF
Device
Data MRF1535N
Rev. 13, 6/2009
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