MRF18060ALR3

Freescale Semiconductor Technical Data Document Number: MRF18060A Rev. 9, 5/2006 RF Power Field Effect Transistors MRF18060ALR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WLL applications. Specified for GSM 1805 -- 1880 MHz. • Typical GSM Performance, Full Frequency Band (1805 -- 1880 MHz) Power Gain — 13 dB @ 60 Watts Efficiency — 45% @ 60 Watts • Capable of Handling 10:1 VSWR, @ 26 Vdc, 1840 MHz, 60 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. 1805--1880 MHz, 60 W, 26 V LATERAL N--CHANNEL RF POWER MOSFETs CASE 465--06, STYLE 1 NI--780 MRF18060ALR3 CASE 465A--06, STYLE 1 NI--780S MRF18060ALSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --0.5, +15 Vdc Total Device Dissipation @ TC ≥ 25°C Derate above 25°C PD 180 1.03 W W/°C Storage Temperature Range Tstg -- 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 0.97 °C/W ARCHIVE INFORMATION ARCHIVE INFORMATION N--Channel Enhancement--Mode Lateral MOSFETs Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model © Freescale Semiconductor, Inc., 2006, 2010. All rights reserved. RF Device Data Freescale Semiconductor Class 2 (Minimum) M3 (Minimum) MRF18060ALR3 MRF18060ALSR3 1 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 6 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 μAdc) VGS(th) 2 — 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 500 mAdc) VGS(Q) 2.5 3.9 4.5 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.27 — Vdc Input Capacitance (Including Input Matching Capacitor in Package) (1) (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss — 160 — pF Output Capacitance (1) (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 740 — pF Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.7 — pF 11.5 13 — 43 45 — — — -- 10 Characteristic Off Characteristics Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 μAdc) Dynamic Characteristics Functional Tests (In Freescale Test Fixture, 50 ohm system) Common--Source Amplifier Power Gain @ 60 W (2) (VDD = 26 Vdc, IDQ = 500 mA, f = 1805 -- 1880 MHz) Gps Drain Efficiency @ 60 W (2) (VDD = 26 Vdc, IDQ = 500 mA, f = 1805 -- 1880 MHz) η Input Return Loss (2) (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA, f = 1805 -- 1880 MHz) IRL dB % 1. Part is internally matched both on input and output. 2. To meet application requirements, Freescale test fixtures have been designed to cover the full GSM1800 band, ensuring batch--to--batch consistency. dB ARCHIVE INFORMATION ARCHIVE INFORMATION On Characteristics MRF18060ALR3 MRF18060ALSR3 2 RF Device Data Freescale Semiconductor R2 T1 Z6 R3 C1 ARCHIVE INFORMATION RF INPUT VSUPPLY C3 C2 R5 Z1 Z2 Z4 Z5 RF OUTPUT Z7 C7 Z3 C6 C5 C1 C2, C4, C7 C3 C5 C6 R1, R3 R2, R4 R5 T1 C4 R4 VBIAS + DUT 100 nF Chip Capacitor (1203) 10 pF Chip Capacitors 10 mF, 35 V Electrolytic Tantalum Capacitor 1.2 pF Chip Capacitor 1.0 pF Chip Capacitor 2.2 kΩ Chip Resistors (0805) 2.7 kΩ Chip Resistors (0805) 1.1 kΩ Chip Resistor (0805) BC847 Transistor SOT--23 Z1 Z2 Z3 Z4 Z5 Z6 Z7 0.47″ x 0.09″ Microstrip 1.16″ x 0.09″ Microstrip 0.57″ x 0.95″ Microstrip 0.59″ x 1.18″ Microstrip 1.26″ x 0.15″ Microstrip 1.15″ x 0.09″ Microstrip 0.37″ x 0.09″ Microstrip Figure 1. 1805 -- 1880 MHz Test Fixture Schematic VBIAS R1 R2 R3 T1 VSUPPLY C3 C1 R4 C4 C2 R5 C7 C6 C5 ARCHIVE INFORMATION R1 Ground Ground MRF18060 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 1805 -- 1880 MHz Test Fixture Component Layout MRF18060ALR3 MRF18060ALSR3 RF Device Data Freescale Semiconductor 3 VBIAS C1 T1 R1 R5 R2 C2 C4 R3 T2 VSUPPLY + C3 R4 C5 RF INPUT Z1 Z2 C6 C1 C2 C3, C5, C8 C4 C6 C7 R1 R2, R6 R3 R4 R5 Z3 Z4 Z6 RF OUTPUT Z5 C7 1 mF Chip Capacitor (0805) 100 nF Chip Capacitor (0805) 10 pF Chip Capacitors, ACCU--P (0805) 10 mF, 35 V Tantalum Electrolytic Capacitor 1.8 pF Chip Capacitor, ACCU--P (0805) 1 pF Chip Capacitor, ACCU--P (0805) 10 Ω Chip Resistor (0805) 1 kΩ Chip Resistors (0805) 1.2 kΩ Chip Resistor (0805) 2.2 kΩ Chip Resistor (0805) 5 kΩ, SMD Potentiometer Z7 C8 T1 LP2951 Micro--8 Voltage Regulator T2 BC847 SOT--23 NPN Transistor Z1 0.159″ x 0.055″ Microstrip Z2 0.982″ x 0.055″ Microstrip Z3 0.087″ x 0.055″ Microstrip Z4 0.512″ x 0.787″ Microstrip Z5 0.433″ x 1.220″ Microstrip Z6 1.039″ x 0.118″ Microstrip Z7 0.268″ x 0.055″ Microstrip Substrate = 0.5 mm Teflon® Glass, εr = 2.55 Figure 3. 1800 -- 2000 MHz Demo Board Schematic ARCHIVE INFORMATION ARCHIVE INFORMATION R6 MRF18060ALR3 MRF18060ALSR3 4 RF Device Data Freescale Semiconductor VBIAS Ground C4 R1 C1 T1 R4 T2 R5 C2 C3 ARCHIVE INFORMATION C6 MRF18060 C7 C5 R6 C8 MRF18060 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. 1800 -- 2000 MHz Demo Board Component Layout ARCHIVE INFORMATION R2 R3 VSUPPLY MRF18060ALR3 MRF18060ALSR3 RF Device Data Freescale Semiconductor 5 16 100 15 90 500 mA 11 300 mA 10 100 mA 8 VDD = 26 Vdc f = 1880 MHz 1 10 Pout, OUTPUT POWER (WATTS) 60 40 30 10 0 100 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 70 3W 60 50 VDD = 26 Vdc IDQ = 500 mA 40 30 1W 20 0.5 W 10 0 1800 1820 18 20 24 26 22 VDD, SUPPLY VOLTAGE (VOLTS) 1880 1900 Figure 7. Output Power versus Frequency 80 55 70 50 η 60 45 Pout 50 40 40 35 30 30 VDD = 26 Vdc IDQ = 500 mA f = 1880 MHz 20 0 0 1 3 4 2 Pin, INPUT POWER (WATTS) 14.5 --2 Gps 14.0 --4 13.5 --6 13.0 --8 12.5 --10 12.0 --12 11.5 --14 11.0 IRL 1800 5 Figure 8. Output Power and Efficiency versus Input Power 0 1700 30 60 15.0 10.5 10.0 28 90 10 1860 1840 f, FREQUENCY (MHz) G ps, POWER GAIN (dB) VDD = 26 Vdc IDQ = 500 mA Figure 6. Output Power versus Supply Voltage Pin = 6 W 80 1W 20 Figure 5. Power Gain versus Output Power 90 2.5 W 50 1900 f, FREQUENCY (MHz) --16 VDD = 26 Vdc IDQ = 500 mA 2000 2100 25 20 6 15 η, DRAIN EFFICIENCY (%) 12 Pin = 5 W IRL, INPUT RETURN LOSS (dB) 13 80 70 ARCHIVE INFORMATION IDQ = 750 mA 14 9 ARCHIVE INFORMATION Pout , OUTPUT POWER (WATTS) G ps, POWER GAIN (dB) TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD) --18 --20 Figure 9. Wideband Gain and IRL (at Small Signal) MRF18060ALR3 MRF18060ALSR3 6 RF Device Data Freescale Semiconductor Zo = 5 Ω Zload f = 1700 MHz ARCHIVE INFORMATION ARCHIVE INFORMATION f = 2100 MHz f = 1700 MHz Zsource f = 2100 MHz VDD = 26 V, IDQ = 500 mA, Pout = 60 W CW f MHz Zsource Ω Zload Ω 1700 0.60 -- j2.53 2.27 -- j3.44 1800 0.80 -- j3.20 2.05 -- j3.05 1900 0.92 -- j3.42 1.90 -- j2.90 2000 1.07 -- j3.59 1.64 -- j2.88 2100 1.31 -- j4.00 1.29 -- j2.99 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 10. Series Equivalent Source and Load Impedance MRF18060ALR3 MRF18060ALSR3 RF Device Data Freescale Semiconductor 7 ARCHIVE INFORMATION ARCHIVE INFORMATION NOTES MRF18060ALR3 MRF18060ALSR3 8 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION ARCHIVE INFORMATION NOTES MRF18060ALR3 MRF18060ALSR3 RF Device Data Freescale Semiconductor 9 ARCHIVE INFORMATION ARCHIVE INFORMATION NOTES MRF18060ALR3 MRF18060ALSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS G 2X 1 Q bbb M T A M B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M--1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M 3 B K 2 (FLANGE) D bbb M T A B M M M bbb ARCHIVE INFORMATION N M T A M T A M B M B M ccc M T A M M aaa M T A M S (LID) ccc H R (INSULATOR) (LID) B M (INSULATOR) B M C F E A T A SEATING PLANE 4X U (FLANGE) 1 K 2X 2 D bbb M T A M B M N (LID) ccc M M T A M B R M ccc M T A M T A M S (INSULATOR) bbb M B M aaa M T A M (LID) B M (INSULATOR) B M C 3 A A (FLANGE) STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 -----0.040 -----0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 -----1.02 -----0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE H E MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M--1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4X Z (LID) B B INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF CASE 465--06 ISSUE G NI--780 MRF18060ALR3 (FLANGE) (FLANGE) DIM A B C D E F G H K M N Q R S aaa bbb ccc ARCHIVE INFORMATION B F T SEATING PLANE CASE 465A--06 ISSUE H NI--780S MRF18060ALSR3 MRF18060ALR3 MRF18060ALSR3 RF Device Data Freescale Semiconductor 11 REVISION HISTORY The following table summarizes revisions to this document. Date 9 Dec. 2010 Description • MRF18060A Rev. 9 data sheet archived. Data sheet split due to change in part life cycle. See MRF18060A--1 Rev. 10 for MRF18060ALSR3 and MRF18060A--2 Rev. 11 for MRF18030ALR3. ARCHIVE INFORMATION ARCHIVE INFORMATION Revision MRF18060ALR3 MRF18060ALSR3 12 RF Device Data Freescale Semiconductor Home Page: www.freescale.com E--mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1--800--521--6274 or +1--480--768--2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. 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ARCHIVE INFORMATION ARCHIVE INFORMATION How to Reach Us: Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006, 2010. All rights reserved. MRF18060ALR3 MRF18060ALSR3 Document Number: RF Device Data MRF18060A Rev. 9, 5/2006 Freescale Semiconductor 13