MRF18085ALSR5

Freescale Semiconductor Technical Data Document Number: MRF18085A Rev. 6, 5/2006 RF Power Field Effect Transistors MRF18085ALR3 MRF18085ALSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WLL applications. Specified for GSM--GSM EDGE 1805--1880 MHz. • GSM and GSM EDGE Performance, Full Frequency Band (1805--1880 MHz) Power Gain -- 15 dB (Typ) @ 85 Watts CW Efficiency -- 52% (Typ) @ 85 Watts CW • Capable of Handling 5:1 VSWR, @ 26 Vdc, 1840 MHz, 85 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large--Signal Impedance Parameters • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 1805--1880 MHz, 85 W, 26 V GSM/GSM EDGE LATERAL N--CHANNEL RF POWER MOSFETs CASE 465--06, STYLE 1 NI--780 MRF18085ALR3 CASE 465A--06, STYLE 1 NI--780S MRF18085ALSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 273 1.56 W W/°C Storage Temperature Range Tstg -- 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1) Unit RθJC 0.79 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case ARCHIVE INFORMATION ARCHIVE INFORMATION N--Channel Enhancement--Mode Lateral MOSFETs Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 1 (Minimum) M3 (Minimum) 1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2006, 2010. All rights reserved. RF Device Data Freescale Semiconductor MRF18085ALR3 MRF18085ALSR3 1 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μAdc) VGS(th) 2 — 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 600 mAdc) VGS(Q) 2.5 3.9 4.5 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.15 — Vdc Crss — 3.6 — pF Common--Source Amplifier Power Gain @ 85 W (2) (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 -- 1880 MHz) Gps 13.5 15 — dB Drain Efficiency @ 85 W (2) (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 -- 1880 MHz) η 48 52 — % Input Return Loss @ 85 W (2) (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 -- 1880 MHz) IRL — --12 --9 dB Power Output, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 -- 1880 MHz) P1dB 83 90 — Watts Characteristic Off Characteristics Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 μAdc) Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Functional Tests (In Freescale Test Fixture, 50 ohm system) 1. Part is internally matched both on input and output. 2. To meet application requirements, Freescale test fixtures have been designed to cover the full GSM1800 band, ensuring batch--to--batch consistency. ARCHIVE INFORMATION ARCHIVE INFORMATION On Characteristics MRF18085ALR3 MRF18085ALSR3 2 RF Device Data Freescale Semiconductor C7 + RF INPUT R1 C4 R2 Z1 Z2 Z5 Z8 Z9 Z10 Z6 Z11 C10 Z12 RF OUTPUT C3 DUT 10 pF Chip Capacitors, ATC 1.8 pF Chip Capacitor, ATC 10 mF, 35 V Tantalum Capacitor, AVX 1 nF Chip Capacitors, ATC 220 mF, 63 V Electrolytic Capacitor, Radial, Philips 0.3 pF Chip Capacitor, ATC 10 kΩ, 1/4 W Chip Resistors (1206) 1.0 kΩ, 1/4 W Chip Resistor (1206) 0.671″ x 0.087″ Microstrip 0.568″ x 0.087″ Microstrip 0.500″ x 0.098″ Microstrip Shorted Stub Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 PCB 0.610″ x 00.118″ Microstrip 0.331″ x 1.153″ Microstrip 0.063″ x 1.153″ Microstrip 0.122″ x 0.925″ Microstrip 0.547″ x 0.925″ Microstrip 0.394″ x 0.177″ Microstrip 0.180″ x 0.087″ Microstrip 0.686″ x 0.087″ Microstrip 0.294″ x 0.087″ Microstrip Taconic TLX8, 30 mils, εr = 2.55 Figure 1. 1805--1880 MHz Test Fixture Schematic C9 R1 C4 C5 C6 R2 C8 R3 C2 C1 Strap C7 CUT OUT AREA ARCHIVE INFORMATION C1, C3, C6, C7 C2 C4 C5, C8 C9 C10 R1, R2 R3 Z1 Z2 Z3 Z4 Z7 C1 Z3 C9 C6 C5 R3 C2 C8 VSUPPLY C3 C10 ARCHIVE INFORMATION VBIAS + MRF18085A Rev0 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 1805--1880 MHz Test Fixture Component Layout MRF18085ALR3 MRF18085ALSR3 RF Device Data Freescale Semiconductor 3 TYPICAL CHARACTERISTICS 800 mA 15 16 15 600 mA 14 13 400 mA 12 11 1 32 V 28 V 11 10 10 100 120 VDD = 26 Vdc IDQ = 800 mA f = 1840 MHz 85_C 13 12 11 10 1000 100 10 1 100 Pin = 8 W 4W 100 80 60 VDD = 26 Vdc IDQ = 800 mA TC = 25_C 1000 1W 40 0.5 W 20 0 1800 9 1820 1840 1860 1880 1900 Pout, OUTPUT POWER (WATTS) f, FREQUENCY (MHz) Figure 5. Power Gain versus Output Power Figure 6. Output Power versus Frequency Gps @ 30 W 16 Gps @ 80 W 0 16 --4 15 15 --8 14 --12 50 14 40 VDD = 26 Vdc IDQ = 800 mA f = 1840 MHz TC = 25_C 13 --16 IRL @ 30 W --20 IRL @ 80 W VDD = 26 Vdc IDQ = 800 mA TC = 25_C 11 1800 1850 1900 --24 --28 1950 60 Gps IRL, INPUT RETURN LOSS (dB) G ps , POWER GAIN (dB) 17 10 1750 10 Figure 4. Power Gain versus Output Power 50_C 12 1 Figure 3. Power Gain versus Output Power 15 13 VDD = 20 V Pout, OUTPUT POWER (WATTS) TC = 25_C 14 0.1 Pout , OUTPUT POWER (WATTS) 16 1000 24 V IDQ = 800 mA f = 1840 MHz TC = 25_C Pout, OUTPUT POWER (WATTS) 17 G ps , POWER GAIN (dB) 12 8 0 ARCHIVE INFORMATION 13 9 10 G ps , POWER GAIN (dB) 14 12 30 20 11 10 η 10 0.1 1 ARCHIVE INFORMATION IDQ = 1000 mA G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 16 17 VDD = 26 Vdc f = 1840 MHz TC = 25_C η, DRAIN EFFICIENCY (%) 17 10 100 f, FREQUENCY (MHz) Pout, OUTPUT POWER (WATTS) Figure 7. Power Gain versus Frequency Figure 8. Power Gain and Efficiency versus Output Power 0 1000 MRF18085ALR3 MRF18085ALSR3 4 RF Device Data Freescale Semiconductor Zo = 10 Ω f = 1990 MHz Zload ARCHIVE INFORMATION f = 1710 MHz ARCHIVE INFORMATION f = 1990 MHz f = 1710 MHz Zsource VDD = 26 V, IDQ = 800 mA, Pout = 85 W CW f MHz Zsource Ω Zload Ω 1710 1.13 -- j3.62 1.79 -- j2.88 1785 1.61 -- j4.23 1.82 -- j3.15 1805 1.69 -- j4.34 1.90 -- j2.66 1880 2.83 -- j5.25 2.09 -- j2.77 1930 3.00 -- j5.18 2.01 -- j2.44 1960 4.39 -- j4.97 2.01 -- j2.57 1990 6.59 -- j4.74 1.79 -- j2.37 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF18085ALR3 MRF18085ALSR3 RF Device Data Freescale Semiconductor 5 ARCHIVE INFORMATION ARCHIVE INFORMATION NOTES MRF18085ALR3 MRF18085ALSR3 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS G Q bbb 2X 1 T A M M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M--1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 3 B K 2 (FLANGE) D bbb T A M B M M M bbb N ARCHIVE INFORMATION R (INSULATOR) M T A M T A M B M B M ccc M T A M M aaa M T A M ccc H B S (LID) (LID) M (INSULATOR) B M C F E T A A SEATING PLANE (FLANGE) 4X U (FLANGE) 2X 2 B (FLANGE) K D bbb M T A B M N M (LID) ccc M M T A R M B M ccc M T A M M B M aaa M T A M S (INSULATOR) bbb M T A (LID) B M (INSULATOR) B M H C 3 E A A (FLANGE) F T MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M--1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4X Z (LID) 1 INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465--06 ISSUE G NI--780 MRF18085ALR3 B DIM A B C D E F G H K M N Q R S aaa bbb ccc SEATING PLANE DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 -----0.040 -----0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 -----1.02 -----0.76 0.127 REF 0.254 REF 0.381 REF ARCHIVE INFORMATION B STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE CASE 465A--06 ISSUE H NI--780S MRF18085ALSR3 MRF18085ALR3 MRF18085ALSR3 RF Device Data Freescale Semiconductor 7 REVISION HISTORY The following table summarizes revisions to this document. Date 6 Dec. 2010 Description • MRF18085A Rev. 6 data sheet archived. Data sheet split due to change in part life cycle. See MRF18085A--1 Rev. 7 for MRF18085ALR3 and MRF18085A--2 Rev. 8 for MRF18085ALSR3. ARCHIVE INFORMATION ARCHIVE INFORMATION Revision MRF18085ALR3 MRF18085ALSR3 8 RF Device Data Freescale Semiconductor Home Page: www.freescale.com E--mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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ARCHIVE INFORMATION ARCHIVE INFORMATION How to Reach Us: Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006, 2010. All rights reserved. MRF18085ALR3 MRF18085ALSR3 Document Number: RF Device Data MRF18085A Rev. 6, 5/2006 Freescale Semiconductor 9