Freescale Semiconductor
Technical Data
Document Number: MRF19030
Rev. 12, 5/2006
RF Power Field Effect Transistors
MRF19030LR3
MRF19030LSR3
Designed for class AB PCN and PCS base station applications with
frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and
multicarrier amplifier applications.
• CDMA Performance @ 1990 MHz, 26 Volts
IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13
885 kHz — - 47 dBc in 30 kHz BW
1.25 MHz — - 55 dBc in 12.5 kHz BW
2.25 MHz — - 55 dBc in 1 MHz BW
Output Power — 4.5 Watts Avg.
Power Gain — 13.5 dB
Efficiency — 17%
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 30 Watts CW
Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
1930 - 1990 MHz, 30 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465E - 04, STYLE 1
NI - 400
MRF19030LR3
CASE 465F - 04, STYLE 1
NI - 400S
MRF19030LSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
83.3
0.48
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value
Unit
RθJC
2.1
°C/W
ARCHIVE INFORMATION
ARCHIVE INFORMATION
N - Channel Enhancement - Mode Lateral MOSFETs
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Class
2 (Minimum)
M3 (Minimum)
MRF19030LR3 MRF19030LSR3
1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Drain - Source Breakdown Voltage
(VGS = 0 Vdc, ID = 20 μA)
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 μAdc)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 300 mA)
VGS(Q)
2
3.3
4.5
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.29
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 1 Adc)
gfs
—
2
—
S
Input Capacitance (Including Input Matching Capacitor in Package) (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Ciss
—
98.5
—
pF
Output Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Coss
—
37
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss
—
1.3
—
pF
Two - Tone Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
Gps
—
13
—
dB
Two - Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
η
—
36
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
IMD
—
- 31
—
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
IRL
—
- 13
—
dB
Two - Tone Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
Gps
12
13
—
dB
Two - Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
η
33
36
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
IMD
—
- 31
- 28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
IRL
—
- 13
-9
dB
Off Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system)
ARCHIVE INFORMATION
ARCHIVE INFORMATION
On Characteristics
1. Part is internally matched both on input and output.
MRF19030LR3 MRF19030LSR3
2
RF Device Data
Freescale Semiconductor
+
C2
B1
B2
R1
R2
R3
C3
C4
B3
+
R4
C6
R5
C9
C5
B4
B5
R6
R7
Z6
Z7
ARCHIVE INFORMATION
Z2
Z3
C1
Z9
Z8
Z5
Z1
C8
Z10
RF
OUTPUT
C7
Z4
DUT
L4
C10
L1
B1 - B5
C1, C7
C2, C8
C3, C5
C4, C6
C9
C10
L1 - L4
R1 - R7
Z1
Z2
+
L3
L2
RF
INPUT
VSUPPLY
Short Ferrite Beads
10 pF Chip Capacitors
470 μF, 35 V Electrolytic Capacitors
0.1 μF Chip Capacitors
5.1 pF Chip Capacitors
22 μF Tantalum Chip Capacitor
0.4 - 2.5 pF Variable Capacitor, Johanson Gigatrim
12.5 nH Inductors
12 Ω Chip Resistors (0805)
0.080″ x 0.595″ Microstrip
0.080″ x 0.600″ Microstrip
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Substrate
0.080″
0.325″
0.510″
0.510″
0.325″
0.080″
0.080″
0.080″
0.030″
Arlon
Figure 1. MRF19030LR3(SR3) Test Circuit Schematic
x 0.480″ Microstrip
x 0.280″ Microstrip
x 0.200″ Microstrip
x 0.200″ Microstrip
x 0.280″ Microstrip
x 0.480″ Microstrip
x 0.530″ Microstrip
x 0.671″ Microstrip
x 3.00″ x 5.00″ Glass Teflon®,
ARCHIVE INFORMATION
VBIAS
MRF19030LR3 MRF19030LSR3
RF Device Data
Freescale Semiconductor
3
C2
C8
C3
R1
B2
B1
R2
C5
R6
B4
C4
R3 R4
B3 R5
C9
L2
L3
C6
C7
C1
L1
R7
B5
L4
MRF19030
Rev. 0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF19030LR3(SR3) Test Circuit Component Layout
ARCHIVE INFORMATION
ARCHIVE INFORMATION
C10
MRF19030LR3 MRF19030LSR3
4
RF Device Data
Freescale Semiconductor
30
20
−20
VDD = 26 Vdc
IDQ = 300 mA, Pout = 30 W (PEP)
Two−Tone Measurement, 100 kHz Tone Spacing
−25
Gps
10
−30
IMD
0
1900
1960
1980
1940
f, FREQUENCY (MHz)
1920
2000
−35
2020
40
35
−50
2.25 MHz
25
885 kHz
−70
15
Gps
−80
10
CDMA 9 Channels Forward
PILOT:0, PAGING:1, TRAFFIC:8−13, SYNC:32
−90
5
0
2
6
8
10
4
Pout, OUTPUT POWER (WATTS Avg.) CDMA
−100
12
Figure 4. CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
−20
VDD = 26 Vdc, f = 1960 MHz
Two−Tone Measurement,
100 kHz Tone Spacing
−35
200 mA
−40
300 mA
400 mA
−45
350 mA
−50
300 mA
−55
1.0
10
Pout, OUTPUT POWER (WATTS) PEP
100
VDD = 26 Vdc, IDQ = 300 mA, f = 1960 MHz
Two−Tone Measurement,
100 kHz Tone Spacing
−30
3rd Order
−40
−50
5th Order
7th Order
−60
−70
−80
1.0
Figure 5. Intermodulation Distortion
versus Output Power
100
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
15
−22
14
400 mA
350 mA
300 mA
13
300 mA
12
−60
η
20 1.25 MHz
−25
14
−40
30
Figure 3. Class AB Broadband Circuit Performance
−30
−30
200 mA
f = 1960 MHz
IDQ = 300 mA, Pout = 30 W (PEP)
Two−Tone Measurement, 100 kHz Tone Spacing
13.5
−24
−26
Gps
−28
−30
13
IMD
−32
−34
12.5
VDD = 26 Vdc, f = 1960 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
11
1.0
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain versus Output Power
ARCHIVE INFORMATION
η
VDD = 26 Vdc
IDQ = 350 mA, f = 1960 MHz, Channel Spacing
(Channel Bandwidth): 885 kHz (30 kHz),
1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz)
−36
100
12
20
22
24
26
28
30
32
−38
34
VDD, DRAIN VOLTAGE (VOLTS)
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
MRF19030LR3 MRF19030LSR3
RF Device Data
Freescale Semiconductor
ADJACENT CHANNEL POWER RATION (dB)
−15
−20
45
5
IMD, INTERMODULATION DISTORTION (dBc)
IRL
40
η, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB)
−10
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
50
G ps , POWER GAIN (dB)
G ps , POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
ARCHIVE INFORMATION
η, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB)
TYPICAL CHARACTERISTICS
f = 1990 MHz
f = 1990 MHz
Zload
ARCHIVE INFORMATION
f = 1930 MHz
Zo = 25 Ω
VDD = 26 V, IDQ = 300 mA, Pout = 30 W PEP
f
MHz
Zsource
Ω
Zload
Ω
1930
10.57 - j7.69
5.81 - j5.01
1960
10.54 - j7.43
5.84 - j4.67
1990
10.47 - j7.21
5.84 - j4.35
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
ARCHIVE INFORMATION
Zsource
f = 1930 MHz
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF19030LR3 MRF19030LSR3
6
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
bbb
Q
M
T B
M
A
M
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSION H IS MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. INFORMATION ONLY: CORNER BREAK (4X) TO
BE .060±.005 (1.52±0.13) RADIUS OR .06±.005
(1.52±0.13) x 45° CHAMFER.
B
SEE NOTE 4
1
2X K
3
B
2
2X D
bbb
M
T A
M
B
M
N (LID)
ARCHIVE INFORMATION
ccc
M
T A
B
M
ccc
M
aaa
M
T A
M
B
M
A
M
F
T
M
(INSULATOR)
B
M
R (LID)
C
E
T A
M
S
(INSULATOR)
SEATING
PLANE
aaa
M
T A
M
H
B
M
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
.795
.805
.380
.390
.125
.163
.275
.285
.035
.045
.004
.006
.600 BSC
.057
.067
.092
.122
.395
.405
.395
.405
.120
.130
.395
.405
.395
.405
.005 BSC
.010 BSC
.015 BSC
MILLIMETERS
MIN
MAX
20.19
20.44
9.65
9.9
3.17
4.14
6.98
7.24
0.89
1.14
0.10
0.15
15.24 BSC
1.45
1.7
2.33
3.1
10
10.3
10
10.3
3.05
3.3
10
10.3
10
10.3
0.127 BSC
0.254 BSC
0.381 BSC
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
A
CASE 465E - 04
ISSUE F
NI - 400
MRF19030LR3
2X D
bbb M T A
M
B
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
M
1
2
2X K
ccc
M
T A
M
N
E
B
R
M
(LID)
ccc
(LID)
C
M
T A
M
B
M
M
B
M
F
3
A
T
A
(FLANGE)
M
aaa
M
T A
M
SEATING
PLANE
(INSULATOR)
B
M
H
S
(INSULATOR)
aaa
B
(FLANGE)
M
B
T A
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
.395
.405
.395
.405
.125
.163
.275
.285
.035
.045
.004
.006
.057
.067
.092
.122
.395
.405
.395
.405
.395
.405
.395
.405
.005 REF
.010 REF
.015 REF
MILLIMETERS
MIN
MAX
10.03
10.29
10.03
10.29
3.18
4.14
6.98
7.24
0.89
1.14
0.10
0.15
1.45
1.70
2.34
3.10
10.03
10.29
10.03
10.29
10.03
10.29
10.03
10.29
0.127 REF
0.254 REF
0.38 REF
ARCHIVE INFORMATION
2X
G
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465F - 04
ISSUE E
NI - 400S
MRF19030LSR3
MRF19030LR3 MRF19030LSR3
RF Device Data
Freescale Semiconductor
7
Home Page:
www.freescale.com
E - mail:
support@freescale.com
USA/Europe or Locations Not Listed:
Freescale Semiconductor
Technical Information Center, CH370
1300 N. Alma School Road
Chandler, Arizona 85224
+1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130
support@freescale.com
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
support@freescale.com
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1 - 8 - 1, Shimo - Meguro, Meguro - ku,
Tokyo 153 - 0064
Japan
0120 191014 or +81 3 5437 9125
support.japan@freescale.com
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
+800 2666 8080
support.asia@freescale.com
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1 - 800 - 441 - 2447 or 303 - 675 - 2140
Fax: 303 - 675 - 2150
LDCForFreescaleSemiconductor@hibbertgroup.com
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
ARCHIVE INFORMATION
ARCHIVE INFORMATION
How to Reach Us:
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2006, 2008. All rights reserved.
MRF19030LR3 MRF19030LSR3
Document Number: MRF19030
8Rev. 12, 5/2006
RF Device Data
Freescale Semiconductor
工商网监
湘ICP备2023018690号
