MRF19090SR3

Freescale Semiconductor Technical Data Document Number: MRF19090 Rev. 6, 5/2006 RF Power Field Effect Transistors Designed for Class AB PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications. • Typical CDMA Performance: 1990 MHz, 26 Volts IS--95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 9 Watts Avg. Power Gain — 10 dB Adjacent Channel Power — 885 kHz: --47 dBc @ 30 kHz BW 1.25 MHz: --55 dBc @ 12.5 kHz BW 2.25 MHz: --55 dBc @ 1 MHz BW • Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 90 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large--Signal Impedance Parameters • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF19090R3 MRF19090SR3 1930--1990 MHz, 90 W, 26 V LATERAL N--CHANNEL RF POWER MOSFETs CASE 465B--03, STYLE 1 NI--880 MRF19090R3 CASE 465C--02, STYLE 1 NI--880S MRF19090SR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 270 1.54 W W/°C Storage Temperature Range Tstg -- 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 0.65 °C/W ARCHIVE INFORMATION ARCHIVE INFORMATION N--Channel Enhancement--Mode Lateral MOSFETs Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model © Freescale Semiconductor, Inc., 2006, 2010. All rights reserved. RF Device Data Freescale Semiconductor Class 1 (Minimum) M3 (Minimum) MRF19090R3 MRF19090SR3 1 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc gfs — 7.2 — S Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 μAdc) VGS(th) 2.0 — 4.0 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 750 mAdc) VGS(Q) 2.5 3.8 4.5 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) — 0.10 — Vdc Crss — 4.2 — pF Two--Tone Common--Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Gps 10 11.5 — dB Two--Tone Drain Efficiency (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) η 33 35 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) IMD — --30 --28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) IRL — --12 — dB P1dB — 90 — W Characteristic Off Characteristics Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 μA) ARCHIVE INFORMATION Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Functional Tests (In Freescale Test Fixture) Pout, 1 dB Compression Point (VDD = 26 Vdc, Pout = 90 W CW, f = 1990 MHz) 1. Part is internally matched both on input and output. ARCHIVE INFORMATION On Characteristics MRF19090R3 MRF19090SR3 2 RF Device Data Freescale Semiconductor VBIAS + B1 B3 + B2 + + C13 B4 C14 + C19 C9 C10 C8 C7 L1 C5 C6 C11 C12 + + C15 VSUPPLY C16 + C17 L2 R1 Z1 Z2 Z3 C2 C1 B1, B2 B3, B34 C1, C18 C2, C5, C8 C3 C4 C6, C7 C9, C12 C10, C11 C13, C17 C14, C16 C15, C19 Z4 R2 Z5 Z6 Z7 RF OUTPUT C3 DUT 2 Ferrite Beads, Round, Ferroxcube #56--590--65--3B Ferrite Beads, Surface Mount, Ferroxcube 0.4 -- 2.5 pF Variable Capacitors, Johanson Gigatrim #27285 10 pF Chip Capacitors, ATC #100B100CCA500X 12 pF Chip Capacitor, ATC #100B120CCA500X 0.3 pF Chip Capacitor, ATC #100B0R3CCA500X 120 pF Chip Capacitors, ATC #100B12R1CCA500X 0.1 μF Chip Capacitors, Kemet #CDR33BX104AKWS 1000 pF Chip Capacitors, ATC #100B102JCA50X 22 μF, 35 V Tantalum Chip Capacitors, Kemet #T491X226K035AS4394 10 μF, 35 V Tantalum Chip Capacitors, Kemet #T495X106K035AS4394 1 μF, 35 V Tantalum Chip Capacitors, Kemet #T495X105K035AS4394 Z9 Z8 C4 L1, L2 C18 8 Turns, #26 AWG, 0.085″ OD, 0.330″ Long, Copper Wire R1, R2 270 Ω, 1/4 W Chip Resistors, Garrett Instruments #RM73B2B271JT Z1 ZO = 50 Ohms Z2 ZO = 50 Ohms, Lambda = 0.123 Z3 ZO = 15.24 Ohms, Lambda = 0.0762 Z4 ZO = 10.11 Ohms, Lambda = 0.0392 Z5 ZO = 6.34 Ohms, Lambda = 0.0711 Z6 ZO = 5.02 Ohms, Lambda = 0.0476 Z7 ZO = 5.54 Ohms, Lambda = 0.0972 Z8 ZO = 50.0 Ohms, Lambda = 0.194 Z9 ZO = 50.0 Ohms Raw PCB Material 0.030″ Glass Teflon®, εr = 2.55, 2 oz Copper, 3″ x 5″ Dimensions Figure 1. MRF19090 Test Circuit Schematic ARCHIVE INFORMATION ARCHIVE INFORMATION RF INPUT MRF19090R3 MRF19090SR3 RF Device Data Freescale Semiconductor 3 C9 C10 RFB3 C11 C12 RFB2 RFB1 RFB4 C19 C13 C14 C6 C5 C7 C15 C8 C16 C17 L2 L1 R1 ARCHIVE INFORMATION C1 R2 C3 C4 0.14λ C18 0.212λ MRF19090 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF19090 Test Circuit Component Layout ARCHIVE INFORMATION CUTOUT C2 MRF19090R3 MRF19090SR3 4 RF Device Data Freescale Semiconductor VDD = 26 Vdc Pout = 90 W (PEP) IDQ = 750 mA 100 kHz Tone Spacing 25 --20 --25 20 IMD --30 15 Gps 10 1900 1920 1940 1960 1980 f, FREQUENCY (MHz) 2000 --35 2020 --40 25 885 kHz --50 2.25 MHz 20 1.25 MHz 550 mA --35 --40 750 mA --45 950 mA --50 --55 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 10 0 5 25 15 10 20 Pout, OUTPUT POWER (WATTS (Avg.)) --30 --40 3rd Order --50 5th Order --60 --70 1 G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 12 550 mA 11 VDD = 26 Vdc f = 1960 MHz 100 kHz Tone Spacing 10.5 10 1 10 Pout, OUTPUT POWER (WATTS) PEP Figure 7. Power Gain versus Output Power 100 --22 Pout = 90 W (PEP) IDQ = 750 mA, f = 1960 MHz 100 kHz Tone Spacing 12.5 11.5 7th Order 10 Pout, OUTPUT POWER (WATTS) PEP 12.5 750 mA --80 35 Figure 6. Intermodulation Products versus Output Power 13 950 mA 30 VDD = 26 Vdc IDQ = 750 mA f = 1960 MHz 100 kHz Tone Spacing Figure 5. Third Order Intermodulation Distortion versus Output Power 12 --70 Gps --20 --30 --60 Figure 4. CDMA Performance ACPR, Gain and Drain Efficiency versus Output Power --20 --25 η 15 Figure 3. Class AB Performance versus Frequency VDD = 26 Vdc f = 1960 MHz 100 kHz Tone Spacing 9 Channel Forward Pilot:0, Paging:1, Traffic:8--13, Sync:32 --24 --26 Gps ARCHIVE INFORMATION 30 30 VDD = 26 Vdc, IDQ = 1.1 A, f = 1960 MHz, Channel Spacing (Channel Bandwidth): 885 kHz (30 kHz), 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz) --28 --30 11.5 IMD --32 --34 11 --36 100 10.5 22 24 26 28 30 --38 32 VDD, DRAIN VOLTAGE (VOLTS) Figure 8. Third Order Intermodulation Distortion and Gain versus Supply Voltage MRF19090R3 MRF19090SR3 RF Device Data Freescale Semiconductor ADJACENT CHANNEL POWER RATIO (dB) --15 IRL --30 35 5 IMD, INTERMODULATION DISTORTION (dBc) 35 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) --10 η η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 40 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) ARCHIVE INFORMATION η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS Zo = 10 Ω Zsource f = 1930 MHz f = 1990 MHz 1990 MHz 1930 MHz VDD = 26 V, IDQ = 750 mA, Pout = 90 Watts (PEP) f MHz Zsource Ω 1930 4.5 -- j6.1 1.1 -- j4.5 1960 4.4 -- j6.0 1.1 -- j4.4 1990 4.3 -- j6.1 1.1 -- j4.3 Zload Ω Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source ARCHIVE INFORMATION ARCHIVE INFORMATION Zload Z load Figure 9. Series Equivalent Source and Load Impedance MRF19090R3 MRF19090SR3 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 4 G 2X 1 Q bbb M T A B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M--1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.16 (29.57) BASED ON M3 SCREW. M B (FLANGE) 3 K 2 bbb M D T A B M M ARCHIVE INFORMATION M bbb M T A M B M ccc M T A M B M N R (INSULATOR) ccc M T A M aaa M T A M B S (LID) B (LID) M (INSULATOR) M H C F E T A A SEATING PLANE DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.175 0.205 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.44 5.21 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE (FLANGE) CASE 465B--03 ISSUE D NI--880 MRF19090R3 B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M--1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 1 B (FLANGE) K 2 bbb M D T A M B M M bbb M T A M B ccc M T A M B ccc M N R (INSULATOR) M T A S aaa M B M (LID) M T A M B (LID) M (INSULATOR) M H C F E T A A (FLANGE) DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF ARCHIVE INFORMATION B STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE SEATING PLANE CASE 465C--02 ISSUE D NI--880S MRF19090SR3 MRF19090R3 MRF19090SR3 RF Device Data Freescale Semiconductor 7 REVISION HISTORY The following table summarizes revisions to this document. Date Description 6 Dec. 2010 • MRF19090 Rev. 6 data sheet archived. Data sheet split due to change in part life cycle. See MRF19090--1 Rev. 7 for MRF19090R3 and MRF19090--2 Rev. 8 for MRF19090SR3. ARCHIVE INFORMATION ARCHIVE INFORMATION Revision MRF19090R3 MRF19090SR3 8 RF Device Data Freescale Semiconductor Home Page: www.freescale.com E--mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1--800--521--6274 or +1--480--768--2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. 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ARCHIVE INFORMATION ARCHIVE INFORMATION How to Reach Us: Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006, 2010. All rights reserved. MRF19090R3 MRF19090SR3 Document Number: RF Device Data MRF19090 Rev. 6, 5/2006Semiconductor Freescale 9