Freescale Semiconductor
Technical Data
Document Number: MRF19125
Rev. 6, 4/2006
RF Power Field Effect Transistors
MRF19125R3
MRF19125SR3
Designed for PCN and PCS base station applications with frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
• Typical 2--Carrier N--CDMA Performance for VDD = 26 Volts,
IDQ = 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz
IS--95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 --885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 --2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 24 Watts Avg.
Power Gain — 13.6 dB
Efficiency — 22%
ACPR — --51 dB
IM3 — --37.0 dBc
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 125 Watts CW
Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
1930--1990 MHz, 125 W, 26 V
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465B--03, STYLE 1
NI--880
MRF191225R3
CASE 465C--02, STYLE 1
NI--880S
MRF19125SR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
330
1.89
W
W/°C
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value
Unit
RθJC
0.53
°C/W
ARCHIVE INFORMATION
ARCHIVE INFORMATION
N--Channel Enhancement--Mode Lateral MOSFETs
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
© Freescale Semiconductor, Inc., 2006, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Class
2 (Minimum)
M3 (Minimum)
MRF19125R3 MRF19125SR3
1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
gfs
—
9
—
S
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 μAdc)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 1300 mAdc)
VGS(Q)
2.5
3.9
4.5
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on)
—
0.185
0.21
Vdc
Crss
—
5.4
—
pF
Characteristic
Off Characteristics
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 μAdc)
ARCHIVE INFORMATION
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Functional Tests (In Freescale Test Fixture) 2--Carrier N--CDMA, 1.2288 MHz Channel Bandwidth Carriers. Peak/Avg = 9.8 dB
@ 0.01% Probability on CCDF.
Common--Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
Gps
12
13.5
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
η
19
22
—
%
IM3
—
--37
--35
dBc
ACPR
—
--51
--47
dBc
IRL
—
--13
--9
dB
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured
over 1.2288 MHz Bandwidth at f1 --2.5 MHz and f2 +2.5 MHz)
Adjacent Channel Power Ratio
(VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR
measured over 30 kHz Bandwidth at f1 --885 MHz and f2 +885 MHz)
Input Return Loss
(VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
1. Part is internally matched both on input and output.
ARCHIVE INFORMATION
On Characteristics
(continued)
MRF19125R3 MRF19125SR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Symbol
Min
Typ
Max
Unit
Two--Tone Common--Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1990 MHz, Tone Spacing = 100 kHz)
Gps
—
13.5
—
dB
Two--Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1990 MHz, Tone Spacing = 100 kHz)
η
—
35
—
%
Third Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1990 MHz, Tone Spacing = 100 kHz)
IMD
—
--30
—
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1990 MHz, Tone Spacing = 100 kHz)
IRL
—
--13
—
dB
P1dB
—
130
—
W
Characteristic
Pout, 1 dB Compression Point
(VDD = 26 Vdc, IDQ = 1300 mA, f = 1990 MHz)
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Functional Tests (In Freescale Test Fixture)
MRF19125R3 MRF19125SR3
RF Device Data
Freescale Semiconductor
3
VBIAS
VSUPPLY
+
C5
C4
C3
C7
C2
Z4
RF
INPUT
Z1
Z2
ARCHIVE INFORMATION
Z1, Z7
Z2
Z3
Z4
Z5
Z6
Z8
Z5
C8
C9
Z6
L1
C10
C11
+
+
+
C12
C13
C14
Z7
RF
OUTPUT
C6
DUT
0.500″ x 0.084″ Microstrip
1.105″ x 0.084″ Microstrip
0.360″ x 0.895″ Microstrip
0.920″ x 0.048″ Microstrip
0.605″ x 1.195″ Microstrip
0.800″ x 0.084″ Microstrip
0.660″ x 0.095″ Microstrip
+
Z8
Z3
C1
+
Board
PCB
0.030″ Glass Teflon®,
Keene GX--0300--55--22, εr = 2.55
Etched Circuit Boards
MRF19125 Rev. 5, CMR
Figure 1. MRF19125R3(SR3) Test Circuit Schematic
Table 5. MRF19125R3(SR3) Test Circuit Component Designations and Values
Designators
Description
B1
Short Ferrite Bead, Fair Rite #2743019447
C1
51 pF Chip Capacitor, ATC #100B510JCA500X
C2, C7
5.1 pF Chip Capacitors, ATC #100B5R1JCA500X
C3, C10
1000 pF Chip Capacitors, ATC #100B102JCA500X
C4, C11
0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS
C5
0.1 mF Tantalum Chip Capacitor, Kemet #T491C105M050
C6
10 pF Chip Capacitor, ATC #100B100JCA500X
C8
10 mF Tantalum Chip Capacitor, Kemet #T491X106K035AS4394
C9, C12, C13, C14
22 mF Tantalum Chip Capacitors, Kemet #T491X226K035AS4394
L1
1 Turn, #20 AWG, 0.100″ ID
N1, N2
Type N Flange Mounts, Omni Spectra #3052--1648--10
R1
1.0 kΩ, 1/8 W Chip Resistor
R2
220 kΩ, 1/8 W Chip Resistor
R3
10 Ω, 1/8 W Chip Resistor
ARCHIVE INFORMATION
R2
R3
B1
R1
MRF19125R3 MRF19125SR3
4
RF Device Data
Freescale Semiconductor
C7
C2
R1
L1
B1
C9
C8
R3
C11
C10
C12 C13 C14
C6
MRF19125 Rev 5
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
Figure 2. MRF19125R3(SR3) Test Circuit Component Layout
ARCHIVE INFORMATION
ARCHIVE INFORMATION
C1
C3
CUT OUT
R2 C5 C4
MRF19125R3 MRF19125SR3
RF Device Data
Freescale Semiconductor
5
IM3
10
--56
η
5
--63
ACPR
0
1
40
10
--70
--40
29
3rd Order
--50
23
5th Order
--60
17
7th Order
--70
11
η
--80
5
4
10
100
Pout, OUTPUT POWER (WATTS Avg.) N-CDMA
Pout, OUTPUT POWER (WATTS) PEP
Figure 3. 2-Carrier CDMA ACPR, IM3, Power Gain and
Drain Efficiency versus Output Power
Figure 4. Intermodulation Distortion
Products versus Output Power
IM3, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
--20
24
VDD = 26 Vdc
f = 1960 MHz
100 kHz Tone Spacing
--25
IDQ = 900 mA
--40
--10
IRL
1100 mA
4
IM3
16
1300 mA
G ps
12
100 150
10
1920 1930
1940
Pout, OUTPUT POWER (WATTS) PEP
G ps
6
24
P in
Pout, OUTPUT POWER (WATTS)
Figure 7. CW Performance
--60
1990 2000
100
200
--27
η
--28
--29
36
IMD
--30
34
--31
8
33
--32
0
32
16
10
1980
35
η
4
η, DRAIN EFFICIENCY (%)
32
2
1970
IDQ = 1300 mA
f = 1960 MHz
100 kHz Tone Spacing
37
η, DRAIN EFFICIENCY (%)
40
8
0
1960
38
48
VDD = 26 Vdc
IDQ = 1300 mA
f = 1960 MHz
2
1950
--50
Figure 6. 2-Carrier N-CDMA Broadband
Performance
56
14
10
--40
f, FREQUENCY (MHz)
Figure 5. Third Order Intermodulation
Distortion versus Output Power
12
--30
VDD = 26 Vdc
Pout = 24 Watts (Avg.)
IDQ = 1300 mA
ACPR
14
--50 1500 mA
--20
2-Carrier N-CDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 @ 0.01% Probability (CCDF)
18
1700 mA
--45
0
η
20
--35
150
22
--30
--55
P in , INPUT POWER (WATTS), G ps , POWER GAIN (dB)
35
ARCHIVE INFORMATION
--49
--30
η, DRAIN EFFICIENCY (%)
G ps
15
41
VDD = 26 Vdc
IDQ = 1300 mA
f = 1960 MHz
100 kHz Tone Spacing
IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB)
--42
--20
IMD, INTERMODULATION DISTORTION (dBc)
20
--35
IM3 (dBc), ACPR (dBc)
25
ARCHIVE INFORMATION
--28
VDD = 26 Vdc, IDQ = 1300 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
IMD, INTERMODULATION DISTORTION (dBc)
30
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
TYPICAL CHARACTERISTICS
--33
24
24.5
25
25.5
26
26.5
27
27.5
28
VDD, DRAIN SUPPLY (V)
Figure 8. Two-Tone Intermodulation Distortion and
Drain Efficiency versus Drain Supply
MRF19125R3 MRF19125SR3
6
RF Device Data
Freescale Semiconductor
1500 mA
G ps , POWER GAIN (dB)
13.5
1300 mA
1100 mA
13
900 mA
12.5
VDD = 26 Vdc
f = 1960 MHz
100 kHz Tone Spacing
4
10
100
150
η
35
--10
--15
30
IRL
25
VDD = 26 Vdc
Pout = 125 W (PEP)
IDQ = 1300 mA
100 kHz Tone Spacing
20
15
--20
--25
IMD
--30
Gps
10
1920 1930
Pout, OUTPUT POWER (WATTS) PEP
1940
1950
1960
1970
1980
--35
1990 2000
f, FREQUENCY (MHz)
Figure 9. Two-Tone Power Gain versus
Output Power
Figure 10. Two-Tone Broadband Performance
MTTF FACTOR (HOURS X AMPS2)
1010
IMD, INTERMODULATION DISTORTION (dBc)
ARCHIVE INFORMATION
12
--5
40
--25
3rd Order
--30
VDD = 26 Vdc
IDQ = 1300 mA
f = 1960 MHz
--35
--40
5th Order
--45
109
108
107
90 100 110 120 130 140 150 160 170 180 190 200 210
--50
TJ, JUNCTION TEMPERATURE (°C)
7th Order
--55
100
1000
5000
Δf, TONE SPACING (kHz)
Figure 11. Intermodulation Distortion Products
versus Two--Tone Tone Spacing
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 12. MTTF Factor versus Junction Temperature
ARCHIVE INFORMATION
IDQ = 1700 mA
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
14
G ps , POWER GAIN (dB),η, DRAIN EFFICIENCY (%)
TYPICAL CHARACTERISTICS
MRF19125R3 MRF19125SR3
RF Device Data
Freescale Semiconductor
7
N--CDMA TEST SIGNAL
0
1.2288 MHz
Channel BW
--10
--20
--IM3 @
1.2288 MHz
Integrated BW
--30
+IM3 @
1.2288 MHz
Integrated BW
(dB)
--40
--50
--60
--ACPR @ 30 kHz
Integrated BW
--80
+ACPR @ 30 kHz
Integrated BW
ARCHIVE INFORMATION
--90
--100
--7.5
--6
--4.5
--3
--1.5
0
1.5
3
4.5
6
f, FREQUENCY (MHz)
Figure 14. 2--Carrier N--CDMA Spectrum
7.5
ARCHIVE INFORMATION
--70
MRF19125R3 MRF19125SR3
8
RF Device Data
Freescale Semiconductor
f = 1930 MHz
Zload
f = 1990 MHz
f = 1990 MHz
Zsource
f = 1930 MHz
VDD = 26 V, IDQ = 1300 mA, Pout = 24 W (Avg.)
f
MHz
Zsource
Ω
Zload
Ω
1930
1.43 -- j5.01
0.75 -- j0.93
1960
1.51 -- j4.88
0.71 -- j0.89
1990
1.56 -- j4.93
0.68 -- j1.02
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Zo = 10 Ω
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 13. Series Equivalent Source and Load Impedance
MRF19125R3 MRF19125SR3
RF Device Data
Freescale Semiconductor
9
ARCHIVE INFORMATION
ARCHIVE INFORMATION
NOTES
MRF19125R3 MRF19125SR3
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.16 (29.57) BASED ON M3 SCREW.
4
2X
1
Q
bbb
M
T A
M
B
M
B
(FLANGE)
3
K
2
bbb
D
T A
M
M
B
M
M
ARCHIVE INFORMATION
bbb
T A
M
M
B
M
N
ccc
T A
M
M
R
(INSULATOR)
B
ccc
M
T A
M
aaa
M
T A
M
B
S
(LID)
M
B
(LID)
M
(INSULATOR)
M
H
F
T
A
A
INCHES
MIN
MAX
1.335
1.345
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.175
0.205
0.872
0.888
0.871
0.889
.118
.138
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
13.6
13.8
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.44
5.21
22.15
22.55
19.30
22.60
3.00
3.51
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
C
E
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
SEATING
PLANE
(FLANGE)
CASE 465B--03
ISSUE D
NI--880
MRF19125R3
B
1
B
(FLANGE)
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
2
bbb
M
D
T A
M
B
M
M
bbb
M
T A
M
B
N
ccc
M
T A
M
B
R
(INSULATOR)
ccc
M
M
T A
S
(LID)
aaa
M
B
M
M
T A
M
B
(LID)
M
(INSULATOR)
M
H
C
F
E
T
A
A
(FLANGE)
SEATING
PLANE
CASE 465C--02
ISSUE D
NI--880S
MRF19125SR3
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
0.905
0.915
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
22.99
23.24
13.60
13.80
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
ARCHIVE INFORMATION
B
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MRF19125R3 MRF19125SR3
RF Device Data
Freescale Semiconductor
11
REVISION HISTORY
The following table summarizes revisions to this document.
Date
Description
6
Dec. 2010
• MRF19125 Rev. 6 data sheet archived. Data sheet split due to change in part life cycle. See MRF19125--1
Rev. 7 for MRF19125SR3 and MRF19125--2 Rev. 8 for MRF19125R3.
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Revision
MRF19125R3 MRF19125SR3
12
RF Device Data
Freescale Semiconductor
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Document Number: MRF19125
Rev.Device
6, 4/2006Data
RF
Freescale Semiconductor
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