NXP Semiconductors
Technical Data
Document Number: MRF1K50N
Rev. 0, 11/2016
RF Power LDMOS Transistors
MRF1K50N
MRF1K50GN
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial,
scientific and medical applications, as well as radio and VHF TV broadcast,
sub--GHz aerospace and mobile radio applications. Their unmatched input and
output design allows for wide frequency range use from 1.8 to 500 MHz.
1.8–500 MHz, 1500 W CW, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
Typical Performance: VDD = 50 Vdc
Frequency
(MHz)
Signal Type
Pout
(W)
Gps
(dB)
ηD
(%)
87.5--108 (1,2)
CW
1421 CW
23.1
83.2
230 (3,4)
Pulse
(100 μsec, 20% Duty Cycle)
1500 Peak
23.4
75.1
OM--1230--4L
PLASTIC
MRF1K50N
Load Mismatch/Ruggedness
Frequency
(MHz)
230
(3)
Signal Type
VSWR
Pulse
(100 μsec, 20%
Duty Cycle)
> 65:1 at all
Phase Angles
Pin
(W)
Test
Voltage
15 Peak
(3 dB
Overdrive)
50
Result
No Device
Degradation
OM--1230G--4L
PLASTIC
MRF1K50GN
1. Data from 87.5–108 MHz broadband reference circuit (page 5).
2. The values shown are the center band performance numbers across the indicated
frequency range.
3. Data from 230 MHz narrowband production test fixture (page 11).
4. All data measured in fixture with device soldered to heatsink.
Features
• High drain--source avalanche energy absorption capability
• Unmatched input and output allowing wide frequency range utilization
• Device can be used single--ended or in a push--pull configuration
• Characterized from 30 to 50 V for ease of use
• Suitable for linear application
• Integrated ESD protection with greater negative gate--source voltage range
for improved Class C operation
• Recommended driver: MRFE6VS25N (25 W)
Typical Applications
• Industrial, Scientific, Medical (ISM)
– Laser generation
– Plasma etching
– Particle accelerators
– MRI and other medical applications
– Industrial heating, welding and drying systems
• Broadcast
– Radio broadcast
– VHF TV broadcast
• Aerospace
– VHF omnidirectional range (VOR)
– HF and VHF communications
– Weather radar
• Mobile Radio
– VHF and UHF base stations
© 2016 NXP B.V.
RF Device Data
NXP Semiconductors
Gate A 3
1 Drain A
Gate B 4
2 Drain B
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
MRF1K50N MRF1K50GN
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
–0.5, +133
Vdc
Gate--Source Voltage
VGS
–6.0, +10
Vdc
Operating Voltage
VDD
50
Vdc
Storage Temperature Range
Tstg
– 65 to +150
°C
Case Operating Temperature Range
TC
–40 to +150
°C
Operating Junction Temperature Range (1,2)
TJ
–40 to +225
°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2941
14.71
W
W/°C
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
CW: Case Temperature 80°C, 1500 W CW, 50 Vdc, IDQ(A+B) = 200 mA, 98 MHz
RθJC
0.068
°C/W
Thermal Impedance, Junction to Case
Pulse: Case Temperature 75°C, 1500 W Peak, 100 μsec Pulse Width, 20% Duty Cycle,
50 Vdc, IDQ(A+B) = 100 mA, 230 MHz
ZθJC
0.015
°C/W
Table 2. Thermal Characteristics
Characteristic
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2, passes 2500 V
Charge Device Model (per JESD22--C101)
C3, passes 2000 V
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Off Characteristics
Symbol
Min
Typ
Max
Unit
IGSS
—
—
1
μAdc
133
—
—
Vdc
(4)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 mAdc)
V(BR)DSS
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 133 Vdc, VGS = 0 Vdc)
IDSS
—
—
100
mAdc
Gate Threshold Voltage (4)
(VDS = 10 Vdc, ID = 2130 μAdc)
VGS(th)
1.7
2.2
2.7
Vdc
Gate Quiescent Voltage
(VDD = 50 Vdc, ID(A+B) = 100 mAdc, Measured in Functional Test)
VGS(Q)
1.9
2.4
2.9
Vdc
Drain--Source On--Voltage (4)
(VGS = 10 Vdc, ID = 2.4 Adc)
VDS(on)
—
0.15
—
Vdc
Forward Transconductance (4)
(VDS = 10 Vdc, ID = 36 Adc)
gfs
—
33.5
—
S
On Characteristics
1.
2.
3.
4.
Continuous use at maximum temperature will affect MTTF.
MTTF calculator available at http://www.nxp.com/RF/calculators.
Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
Each side of device measured separately.
(continued)
MRF1K50N MRF1K50GN
2
RF Device Data
NXP Semiconductors
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Transfer Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
5.77
—
pF
Output Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
219
—
pF
Input Capacitance
(VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
683
—
pF
Dynamic Characteristics (1)
Functional Tests (2,3) (In NXP Production Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ(A+B) = 100 mA, Pout = 1500 W Peak
(300 W Avg.), f = 230 MHz, 100 μsec Pulse Width, 20% Duty Cycle
Power Gain
Gps
21.5
23.0
25.0
dB
Drain Efficiency
ηD
68.0
73.0
—
%
Input Return Loss
IRL
—
–16
–9
dB
Table 6. Load Mismatch/Ruggedness (In NXP Production Test Fixture, 50 ohm system) IDQ(A+B) = 100 mA
Frequency
(MHz)
230
Signal Type
VSWR
Pin
(W)
Pulse
(100 μsec, 20% Duty Cycle)
> 65:1 at all
Phase Angles
15 Peak
(3 dB Overdrive)
Test Voltage, VDD
Result
50
No Device Degradation
Table 7. Ordering Information
Device
MRF1K50NR5
MRF1K50GNR5
Tape and Reel Information
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel
Package
OM--1230--4L
OM--1230G--4L
1. Each side of device measured separately.
2. Devices tested without thermal grease or solder under the transistor.
3. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
MRF1K50N MRF1K50GN
RF Device Data
NXP Semiconductors
3
TYPICAL CHARACTERISTICS
1.08
Measured with ±30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
1.06
Ciss
1000
NORMALIZED VGS(Q)
C, CAPACITANCE (pF)
10000
Coss
100
Crss
500 mA
IDQ(A+B) = 100 mA
VDD = 50 Vdc
1.04
1.02
1500 mA
2000 mA
1
0.98
0.96
10
0.94
1
0
10
20
30
40
0.92
–50
50
–25
0
25
50
75
100
TC, CASE TEMPERATURE (°C)
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Note: Each side of device measured separately.
IDQ (mA)
Slope (mV/°C)
100
–2.76
500
–2.38
1500
–2.20
2000
–1.76
Figure 2. Capacitance versus Drain--Source Voltage
Figure 3. Normalized VGS versus Quiescent
Current and Case Temperature
108
VDD = 50 Vdc
ID = 35.2 Amps
MTTF (HOURS)
107
106
105
104
103
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http:/www.nxp.com/RF/calculators.
Figure 4. MTTF versus Junction Temperature — CW
MRF1K50N MRF1K50GN
4
RF Device Data
NXP Semiconductors
87.5–108 MHz BROADBAND REFERENCE CIRCUIT
Table 8. 87.5–108 MHz Broadband Performance (In NXP Reference Circuit, 50 ohm system)
VDD = 50 Vdc, IDQ(A+B) = 200 mA, Pin = 7 W, CW
Frequency
(MHz)
Gps
(dB)
ηD
(%)
Pout
(W)
87.5
22.5
81.7
1257
98
23.1
83.2
1421
108
22.8
79.1
1328
MRF1K50N MRF1K50GN
RF Device Data
NXP Semiconductors
5
87.5–108 MHz BROADBAND REFERENCE CIRCUIT — 2.88″ × 5.12″ (73 mm × 130 mm)
C6
C28
C25
C7
C22
C26
C21
L4
C27
C5
L1
R2
C20
C19
C18
C17
C4
C11
R1
C3
C1
C16
Q1
C24
C12
C2*
L2
swedddddddd
C23*
C15*
L3
R3
C13 C14*
C8
MRF1K50N
Rev. 0
C9 C10
D87696
*C2, C14, C15 and C23 are mounted vertically.
Note: Q1 leads are soldered to the PCB with L3 soldered directly on top of the drain leads.
0.26
(6.5)
0.63
(16.0)
0.26
(6.6)
L3 total wire length = 2.04″ (52 mm)
Inches
(mm)
Figure 5. MRF1K50N 87.5–108 MHz Broadband Reference Circuit
Component Layout
Figure 6. MRF1K50N 87.5–108 MHz Broadband Reference Circuit
Component Layout — Bottom
MRF1K50N MRF1K50GN
6
RF Device Data
NXP Semiconductors
87.5–108 MHz BROADBAND REFERENCE CIRCUIT
Table 9. MRF1K50N Broadband Reference Circuit Component Designations and Values — 87.5–108 MHz
Part
Description
Part Number
Manufacturer
C1, C3, C6, C9, C18, C19,
C20, C21, C22
1000 pF Chip Capacitors
ATC100B102JT50XT
ATC
C2
33 pF Chip Capacitor
ATC100B330JT500XT
ATC
C4, C5, C8
10,000 pF Chip Capacitors
ATC200B103KT50XT
ATC
C7, C10, C15, C16, C17, C23 470 pF Chip Capacitors
ATC100B471JT200XT
ATC
C11
91 pF, 300 V Mica Capacitor
MIN02-002EC910J-F
CDE
C12
56 pF, 300 V Mica Capacitor
MIN02-002DC560J-F
CDE
C13
2.2 pF Chip Capacitor
ATC100B2R2JT500XT
ATC
C14, C24
12 pF Chip Capacitors
ATC100B120GT500XT
ATC
C25, C26, C27
220 μF, 100 V Electrolytic Capacitors
EEV-FK1A221M
Panasonic
C28
22 μF, 35 V Electrolytic Capacitor
UUD1V220MCL1GS
Nichicon
L1, L2
17.5 nH Inductors, 6 Turns
B06TJLC
Coilcraft
L3
1.5 mm Non--Tarnish Silver Plated Copper Wire
SP1500NT-001
Scientific Wire Company
L4
22 nH Inductor
1212VS-22NMEB
Coilcraft
Q1
RF Power LDMOS Transistor
MRF1K50N
NXP
R1
10 Ω, 1/4 W Chip Resistor
CRCW120610R0JNEA
Vishay
R2, R3
33 Ω, 2 W Chip Resistors
1-2176070-3
TE Connectivity
PCB
Arlon TC350 0.030″, εr = 3.5
D87696
MTL
Note: Refer to MRF1K50N’s printed circuit boards and schematics to download the 87.5–108 MHz heatsink drawing.
MRF1K50N MRF1K50GN
RF Device Data
NXP Semiconductors
7
TYPICAL CHARACTERISTICS — 87.5–108 MHz
BROADBAND REFERENCE CIRCUIT
27
83
ηD
25
81
79
24
23
77
Gps
22
1600
21
1500
Pout
20
19
18
87
1400
VDD = 50 Vdc, Pin = 7 W, lDQ(A+B) = 200 mA
89
91
95
93
97
Pout, OUTPUT
POWER (WATTS)
Gps, POWER GAIN (dB)
26
ηD, DRAIN
EFFICIENCY (%)
85
99
101 103
105 107
1300
1200
109
f, FREQUENCY (MHz)
Figure 7. Power Gain, Drain Efficiency and CW Output Power
versus Frequency at a Constant Input Power
Pout, OUTPUT POWER (WATTS) PEAK
1600
98 MHz
1400
1200
87.5 MHz
1000
108 MHz
800
600
400
200
VDD = 50 Vdc, IDQ(A+B) = 200 mA
0
0
1
3
2
4
5
6
7
8
9
Pin, INPUT POWER (WATTS)
Figure 8. CW Output Power versus Input Power and Frequency
28
87.5 MHz
27
98 MHz
60
108 MHz
40
108 MHz
26
20
98 MHz
25
24
1600
Pout
1200
87.5 MHz
23
98 MHz
108 MHz
22
21
80
ηD
800
Gps
400
VDD = 50 Vdc, lDQ(A+B) = 200 mA
0
1
2
3
4
ηD, DRAIN
EFFICIENCY (%)
29
Gps, POWER GAIN (dB)
100
87.5 MHz
5
6
7
8
Pout, OUTPUT
POWER (WATTS)
30
0
9
Pin, INPUT POWER (WATTS)
Figure 9. Power Gain, Drain Efficiency and CW Output Power
versus Input Power and Frequency
MRF1K50N MRF1K50GN
8
RF Device Data
NXP Semiconductors
87.5–108 MHz BROADBAND REFERENCE CIRCUIT
Zo = 10 Ω
Zsource
f = 108 MHz
f = 108 MHz
f = 87.5 MHz
f = 87.5 MHz
Zload
f
MHz
Zsource
Ω
Zload
Ω
87.5
4.07 + j5.13
3.92 + j2.89
98
3.93 + j4.84
3.39 + j2.35
108
3.50 + j4.72
2.83 + j2.56
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
50 Ω
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
--
-Z
source
Output
Matching
Network
50 Ω
+
Z
load
Figure 10. Broadband Series Equivalent Source and Load Impedance — 87.5–108 MHz
MRF1K50N MRF1K50GN
RF Device Data
NXP Semiconductors
9
HARMONIC MEASUREMENTS — 87.5–108 MHz
BROADBAND REFERENCE CIRCUIT
F1
H2
H3
H4
Fundamental (F1)
87.5 MHz
175 MHz –32 dB
262.5 MHz –28 dB
350 MHz –44 dB
–32 dB
H3
H2
H3
H4
H2
(175 MHz) (262.5 MHz) (350 MHz)
–28 dB
–44 dB
H4
Center: 228.5 MHz
35 MHz
Span: 350 MHz
Figure 11. 87.5 MHz Harmonics @ 1200 W CW
MRF1K50N MRF1K50GN
10
RF Device Data
NXP Semiconductors
230 MHz NARROWBAND PRODUCTION TEST FIXTURE — 6.0″ × 4.0″ (152 mm × 102 mm)
C10
C6
C27
C12
C9
D79536
Coax1
Coax3
L3
C4*
C21*
C22*
C23*
CUT OUT AREA
C16 C17
C24
L4
Coax4
C26
MRF1K50N
Rev. 0
C11
C7
C18*
C19*
C20*
C14 C15
C13
R2
Coax2
C5
L1
L2
C3
C1
C29
C25
R1
C2
C28
C30
C31
C32
C8
*C4, C18, C19, C20, C21, C22 and C23 are mounted vertically.
Figure 12. MRF1K50N Narrowband Test Circuit Component Layout — 230 MHz
Table 10. MRF1K50N Narrowband Test Circuit Component Designations and Values — 230 MHz
Part
Description
Part Number
Manufacturer
C1, C2, C3
22 pF Chip Capacitors
ATC100B220JT500XT
ATC
C4
27 pF Chip Capacitor
ATC100B270JT500XT
ATC
C5, C6
22 μF, 35 V Tantalum Capacitors
T491X226K035AT
Kemet
C7, C9
0.1 μF Chip Capacitors
CDR33BX104AKWS
AVX
C8, C10
220 nF Chip Capacitors
C1812C224K5RACTU
Kemet
C11, C12, C25, C26
1000 pF Chip Capacitors
ATC100B102JT50XT
ATC
C13
51 pF Chip Capacitor
ATC100B510JT500XT
ATC
C14
24 pF Chip Capacitor
ATC800R240JT500XT
ATC
C15, C16, C17
20 pF Chip Capacitors
ATC800R200JT500XT
ATC
C18, C19, C20, C21, C22, C23
240 pF Chip Capacitors
ATC100B241JT200XT
ATC
C24
8.2 pF Chip Capacitor
ATC100B8R2CT500XT
ATC
C27, C28, C29, C30, C31, C32
470 μF, 63 V Electrolytic Capacitors
MCGPR63V477M13X26-RH
Multicomp
Coax1, 2, 3, 4
25 Ω Semi Rigid Coax Cables, 2.2″ Shield
Length
UT-141C-25
Micro--Coax
L1, L2
5 nH Inductors
A02TKLC
Coilcraft
L3, L4
6.6 nH Inductors
GA3093-ALC
Coilcraft
R1, R2
10 Ω, 1/4 W Chip Resistors
CRCW120610R0JNEA
Vishay
PCB
Arlon AD255A 0.030″, εr = 2.55
D79536
MTL
MRF1K50N MRF1K50GN
RF Device Data
NXP Semiconductors
11
TYPICAL CHARACTERISTICS — 230 MHz
PRODUCTION TEST FIXTURE
Pout, OUTPUT POWER (WATTS) PEAK
1800
VDD = 50 Vdc, f = 230 MHz
Pulse Width = 100 μsec, 20% Duty Cycle
1600
1400
1200
Pin = 6.5 W
1000
800
600
Pin = 3.2 W
400
200
0
0
0.5
1.5
1
2
2.5
3
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 13. Output Power versus Gate--Source
Voltage at a Constant Input Power
25
60
56
52
48
40
24
28
32
36
40
IDQ(A+B) = 900 mA
23
60
ηD
600 mA
21
300 mA
40
900 mA
100 mA
17
10
44
80
Gps
19
44
100
VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 230 MHz
Pulse Width = 100 μsec, 20% Duty Cycle
20
100 mA
300 mA
600 mA
100
1000
0
2000
Pout, OUTPUT POWER (WATTS) PEAK
Pin, INPUT POWER (dBm) PEAK
f
(MHz)
P1dB
(W)
P3dB
(W)
230
1629
1857
Figure 15. Power Gain and Drain Efficiency
versus Output Power and Quiescent Current
Figure 14. Output Power versus Input Power
80
Gps, POWER GAIN (dB)
25
70
Gps
23
21
19
17
50
TC = –40_C
ηD
25_C
11
30
40
30
85_C
15
13
60
20
85_C
25_C
10
–40_C
100
1000
0
2000
IDQ(A+B) = 100 mA, f = 230 MHz
Pulse Width = 100 μsec, 20% Duty Cycle
26
Gps, POWER GAIN (dB)
27
28
90
VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 230 MHz
Pulse Width = 100 μsec, 20% Duty Cycle
ηD, DRAIN EFFICIENCY (%)
29
24
22
20
VDD = 30 V
18
16
0
200
400
600
35 V
800
40 V
45 V
50 V
1000 1200 1400 1600 1800 2000
Pout, OUTPUT POWER (WATTS) PEAK
Pout, OUTPUT POWER (WATTS) PEAK
Figure 16. Power Gain and Drain Efficiency
versus Output Power
Figure 17. Power Gain versus Output Power
and Drain--Source Voltage
MRF1K50N MRF1K50GN
12
RF Device Data
NXP Semiconductors
ηD, DRAIN EFFICIENCY (%)
64
27
VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 230 MHz
Pulse Width = 100 μsec, 20% Duty Cycle
Gps, POWER GAIN (dB)
Pout, OUTPUT POWER (dBm) PEAK
68
230 MHz NARROWBAND PRODUCTION TEST FIXTURE
f
MHz
Zsource
Ω
Zload
Ω
230
1.0 + j2.0
1.7 + j0.9
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
50 Ω
Input
Matching
Network
= Test circuit impedance as measured from
drain to drain, balanced configuration.
+
-Zsource
Device
Under
Test
--
Output
Matching
Network
50 Ω
+
Zload
Figure 18. Narrowband Series Equivalent Source and Load Impedance — 230 MHz
MRF1K50N MRF1K50GN
RF Device Data
NXP Semiconductors
13
PACKAGE DIMENSIONS
MRF1K50N MRF1K50GN
14
RF Device Data
NXP Semiconductors
MRF1K50N MRF1K50GN
RF Device Data
NXP Semiconductors
15
MRF1K50N MRF1K50GN
16
RF Device Data
NXP Semiconductors
MRF1K50N MRF1K50GN
RF Device Data
NXP Semiconductors
17
MRF1K50N MRF1K50GN
18
RF Device Data
NXP Semiconductors
MRF1K50N MRF1K50GN
RF Device Data
NXP Semiconductors
19
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
Development Tools
• Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Nov. 2016
Description
• Initial Release of Data Sheet
MRF1K50N MRF1K50GN
20
RF Device Data
NXP Semiconductors
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E 2016 NXP B.V.
MRF1K50N MRF1K50GN
Document
Number:
RF
Device
Data MRF1K50N
Rev. 0,Semiconductors
11/2016
NXP
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