Document Number: MRF21010
Rev. 9, 5/2006
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
MRF21010LR1
MRF21010LSR1
N--Channel Enhancement--Mode Lateral MOSFETs
2110--2170 MHz, 10 W, 28 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
• Typical W--CDMA Performance: --45 dBc ACPR, 2140 MHz, 28 Volts,
5 MHz Offset/4.096 MHz BW, 15 DTCH
Output Power — 2.1 Watts
Power Gain — 13.5 dB
Efficiency — 21%
• Capable of Handling 10:1 VSWR @ 28 Vdc, 2140 MHz,
10 Watts CW Output Power
Features
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
• RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel.
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN--PCS/cellular radio and WLL
applications.
CASE 360B--05, STYLE 1
NI--360
MRF21010LR1
CASE 360C--05, STYLE 1
NI--360S
MRF21010LSR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
-- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
43.75
0.25
W
W/°C
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value
Unit
RθJC
5.5
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Class
1 (Minimum)
M1 (Minimum)
MRF21010LR1 MRF21010LSR1
1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 V, ID = 50 µA)
VGS(th)
2.5
3
4
Vdc
Gate Quiescent Voltage
(VDS = 28 V, ID = 100 mA)
VGS(Q)
2.5
4
4.5
Vdc
Drain--Source On--Voltage
(VGS = 10 V, ID = 0.5 A)
VDS(on)
—
0.4
0.5
Vdc
Forward Transconductance
(VDS = 10 V, ID = 1 A)
gfs
—
0.95
—
S
Crss
—
1
—
pF
Two--Tone Common Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA,
f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
Gps
12
13.5
—
dB
Two--Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA,
f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
η
31
35
—
%
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA,
f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
IMD
—
--35
--30
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA,
f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
IRL
—
--12
--10
dB
P1dB
—
11
—
W
Common--Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 10 W CW, IDQ = 100 mA,
f = 2170 MHz)
Gps
—
12
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 10 W CW, IDQ = 100 mA,
f = 2170 MHz)
η
—
42
—
%
Off Characteristics
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID =10 µA)
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Output Power, 1 dB Compression Point, CW
(VDD = 28 Vdc, IDQ = 100 mA, f = 2170 MHz)
MRF21010LR1 MRF21010LSR1
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
ARCHIVE INFORMATION
On Characteristics
VGG
R1
C6
+
C4
C3
C8
VDD
C9
Z5
DUT
Z1
C7
C5
Z4
RF
INPUT
+
+
R2
Z2
Z6
Z7
RF
OUTPUT
Z8
Z3
C10
C2
0.964″ x 0.087″ Microstrip
0.905″ x 0.087″ Microstrip
0.433″ x 0.512″ Microstrip
1.068″ x 0.087″ Microstrip
0.752″ x 0.087″ Microstrip
Z6
Z7
Z8
PCB
0.453″ x 1.118″ Microstrip
0.921″ x 0.154″ Microstrip
0.925″ x 0.087″ Microstrip
Taconic TLX8--0300, 0.030″,
εr = 2.55
ARCHIVE INFORMATION
Z1
Z2
Z3
Z4
Z5
Figure 1. MRF21010L Test Circuit Schematic
Table 5. MRF21010L Test Circuit Component Designations and Values
Part
C1 *
Description
Part Number
Manufacturer
(eared)
2.2 pF Chip Capacitor
100B2R2BW
ATC
(earless)
1.8 pF Chip Capacitor
100B1R8BW
ATC
C2
0.5 pF Chip Capacitor
100B0R5BW
ATC
C3, C9
10 µF, 35 V Tantalum Chip Capacitors
293D106X9035D2T
Sprague--Vishay
C4, C7
1 nF Chip Capacitors
100B102JW
ATC
C5, C6
5.6 pF Chip Capacitors
100B5R6BW
ATC
C8
470 µF, 63 V Electrolytic Capacitor
C10
10 pF Chip Capacitor
100B100GW
ATC
N1, N2
Type N Connector Flange Mounts
3052--1648--10
Macom
R1
1.0 kΩ Chip Resistor (0805)
R2
12 Ω Chip Resistor (0805)
* Piece part depending on eared / earless version of the device.
C8
VGG
VDD
C3
R1
C6 C7
R2
C9
C4 C5
RF Input
C2
C10
RF Output
C1
CUTOUT AREA
ARCHIVE INFORMATION
C1
MRF21010
C--XM--00--001--01
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes
will have no impact on form, fit or function of the current product.
Figure 2. MRF21010L Test Circuit Component Layout
MRF21010LR1 MRF21010LSR1
RF Device Data
Freescale Semiconductor
3
VGG
R1
C1
R3
R4
C6
T2
C2
P1
R6
L5
R5
C3
C8
L1
L2
L4
L3
C10
C9
MRF21010
C--XM--99--001--01
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes
will have no impact on form, fit or function of the current product.
Figure 3. MRF21010L Demonstration Board Component Layout
Table 6. MRF21010L Demonstration Board Component Designations and Values
Designators
Description
C1
1 F Chip Capacitor (0805), AVX #08053G105ZATEA
C2, C6
10 F, 35 V Tantalum Capacitors, Vishay--Sprague #293D106X9035D
C3, C4
6.8 pF Chip Capacitors, ACCU--P (0805), AVX #08051J6R8CBT
C5
10 nF Chip Capacitor (0805), AVX #08055C103KATDA
C7
1.5 pF Chip Capacitor, ACCU--P (0805), AVX #08051J2R2BBT
C8, C10
0.5 pF Chip Capacitors, ACCU--P (0805), AVX #08051J0R5BBT
C9
10 pF Chip Capacitor, ACCU--P (0805), AVX #08055J100GBT
L1
19 mm × 1.07 mm
L2
7.7 mm × 13.8 mm
L3
9.3 mm × 22 mm
L4
17.7 mm × 3.5 mm
L5
3.4 mm × 1.5 mm
R1, R6
10 Ω, 1/8 W Chip Resistors (0805)
R2, R3
1 kΩ, 1/8 W Chip Resistors (0805)
R4
2.2 kΩ, 1/8 W Chip Resistor (0805)
R5
0 Ω, 1/8 W Chip Resistor (0805)
P1
5 kΩ Potentiometer CMS Cermet Multi--Turn, Bourns #3224W
T1
Voltage Regulator, Micro--8, #LP2951
T2
Bipolar NPN Transistor, SOT--23, #BC847
PCB
Rogers RO4350, 0.5 mm, εr = 3.53
MRF21010LR1 MRF21010LSR1
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
ARCHIVE INFORMATION
C4 C5
T1
R2
C7
Ground
V DD
--10
30
IRL
25
--15
VDD = 28 Vdc, Pout = 10 W (PEP), IDQ = 100 mA
Two Tone Measurement, 100 kHz Tone Spacing
20
--20
--25
15
10
Gps
--30
5
IMD
--35
0
2000
2080
2110
2140
2170
f, FREQUENCY (MHz)
2200
--40
2280
--20
20
--30
η
Gps
15
10
--30
VDD = 28 Vdc, f = 2140 MHz
Two Tone Measurement,
100 kHz Tone Spacing
--35
80 mA
--40
100 mA
--45
150 mA
--50
130 mA
--55
--60
0.1
1
10
100
--50
ACPR
5
0.5
1
1.5
2
2.5
3
Pout, OUTPUT POWER (WATTS Avg.) W--CDMA
--20
VDD = 28 Vdc, IDQ = 100 mA, f = 2140 MHz
Two Tone Measurement, 100 kHz Tone Spacing
--25
3rd Order
--30
--35
--40
5th Order
--45
--50
--55
7th Order
--60
--65
--70
0.1
1
10
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion versus
Output Power
Figure 7. Intermodulation Distortion Products
versus Output Power
14.5
15
Pout = 10 W (PEP), IDQ = 100 mA, f = 2140 MHz
Two Tone Measurement, 100 kHz Tone Spacing
G ps , POWER GAIN (dB)
14.0
150 mA
130 mA
100 mA
13.0
80 mA
12.5
12.0
0.1
100
--30
VDD = 28 Vdc, f = 2140 MHz
Two Tone Measurement, 100 kHz Tone Spacing
13.5
--60
3.5
Figure 5. W--CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
--25
--40
--32
--34
14
Gps
--36
--38
13
IMD
--40
1
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Power Gain versus Output Power
100
12
22
26
28
30
VDD, DRAIN VOLTAGE (VOLTS)
--42
32
Figure 9. Intermodulation and Gain versus Supply
Voltage
MRF21010LR1 MRF21010LSR1
RF Device Data
Freescale Semiconductor
5
ARCHIVE INFORMATION
--5
VDD = 28 Vdc, IDQ = 130 mA, f = 2140 MHz
Channel Spacing 5 MHz, BW 4.096 MHz
25 (15 Channels)
ACPR, ADJACENT CHANNEL POWER RATIO (dB)
η
--10
30
IMD, INTERMODULATION DISTORTION (dBc)
35
η, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB)
0
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
40
Figure 4. Class AB Broadband Circuit Performance
G ps , POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
ARCHIVE INFORMATION
η, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB)
TYPICAL CHARACTERISTICS
f = 1990 MHz
Zload
Zo = 10 Ω
f = 2230 MHz
f = 1990 MHz
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Zsource
f = 2230 MHz
VDD = 28 V, IDQ = 100 mA, Pout = 10 W PEP
f
MHz
Zsource
Ω
Zload
Ω
1990
2.85 -- j4.38
2.93 -- j1.71
2110
2.89 -- j5.04
2.76 -- j2.28
2230
2.73 -- j6.19
2.83 -- j2.59
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 10. Series Equivalent Source and Load Impedance
MRF21010LR1 MRF21010LSR1
6
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
Q
aaa
2X
G
B
M
T A
M
B
M
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
1
3
2
(FLANGE)
D
bbb M T A
K
2X
2X
M
B
M
R
(LID)
ccc
N
T A
M
M
B
ccc
M
M
T A
M
B
M
ARCHIVE INFORMATION
(LID)
C
E
T
F
H
S
SEATING
PLANE
bbb
M
M
(INSULATOR)
T A
M
B
aaa
M
M
T A
M
(INSULATOR)
A
B
M
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
0.795
0.805
0.225
0.235
0.125
0.175
0.210
0.220
0.055
0.065
0.004
0.006
0.562 BSC
0.077
0.087
0.220
0.250
0.355
0.365
0.357
0.363
0.125
0.135
0.227
0.233
0.225
0.235
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.19
20.45
5.72
5.97
3.18
4.45
5.33
5.59
1.40
1.65
0.10
0.15
14.28 BSC
1.96
2.21
5.59
6.35
9.02
9.27
9.07
9.22
3.18
3.43
5.77
5.92
5.72
5.97
0.13 REF
0.25 REF
0.38 REF
ARCHIVE INFORMATION
B
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
A
CASE 360B--05
ISSUE G
NI--360
MRF21010LR1
A
A
(FLANGE)
B
1
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
2
B
(FLANGE)
2X
2X
K
B
M
D
bbb
M
T A
M
R
(LID)
ccc
N
M
T A
M
(LID)
ccc
M
T A
M
B
M
B
M
F
H
E
C
S
(INSULATOR)
PIN 3
T
M
SEATING
PLANE
aaa
M
T A
M
(INSULATOR)
bbb
M
T A
M
B
M
360C--05
ISSUE E
NI--360S
MRF21010LSR1
B
M
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
0.375
0.385
0.225
0.235
0.105
0.155
0.210
0.220
0.035
0.045
0.004
0.006
0.057
0.067
0.085
0.115
0.355
0.365
0.357
0.363
0.227
0.23
0.225
0.235
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
9.53
9.78
5.72
5.97
2.67
3.94
5.33
5.59
0.89
1.14
0.10
0.15
1.45
1.70
2.16
2.92
9.02
9.27
9.07
9.22
5.77
5.92
5.72
5.97
0.13 REF
0.25 REF
0.38 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MRF21010LR1 MRF21010LSR1
RF Device Data
Freescale Semiconductor
7
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Freescale Semiconductor, Inc. 2006, 2008. All rights reserved.
MRF21010LR1 MRF21010LSR1
Document Number: MRF21010
8Rev. 9, 5/2006
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
ARCHIVE INFORMATION
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