MRF24G300HSR5

NXP Semiconductors Technical Data Document Number: MRF24G300HS Rev. 0, 09/2019 RF Power GaN Transistors These 300 W CW GaN transistors are designed for industrial, scientific and medical (ISM) applications at 2450 MHz. These devices are suitable for use in CW, pulse, cycling and linear applications. These high gain, high efficiency devices are easy to use and will provide long life in even the most demanding environments. These parts are characterized and performance is guaranteed for applications operating in the 2400 to 2500 MHz band. There is no guarantee of performance when these parts are used in applications designed outside of these frequencies. MRF24G300HS MRF24G300H 2400–2500 MHz, 300 W CW, 50 V WIDEBAND RF POWER GaN TRANSISTORS Typical Performance: In 2400–2500 MHz MRF24G300HS reference circuit, VDD = 48 Vdc, VGS(A+B) = –5 Vdc (1) Frequency (MHz) Signal Type Pin (W) Pout (W) Gps (dB) D (%) 2400 CW 10.0 336 15.3 70.4 2450 10.0 332 15.2 73.0 2500 10.0 307 14.9 74.4 NI--780S--4L MRF24G300HS 1. All data measured in fixture with device soldered to heatsink. NI--780H--4L MRF24G300H Load Mismatch/Ruggedness Frequency (MHz) Signal Type 2450 Pulse (100 sec, 20% Duty Cycle) VSWR > 20:1 at All Phase Angles Pin (W) Test Voltage 12.6 Peak 55 Result No Device Degradation Features  Advanced GaN on SiC, for optimal thermal performance  Characterized for CW, long pulse (up to several seconds) and short pulse operations  Device can be used in a single--ended or push--pull configuration  Input matched for simplified input circuitry  Qualified up to 55 V  Suitable for linear application Typical Applications       Industrial heating Welding and heat sealing Plasma generation Lighting Scientific instrumentation Medical – Microwave ablation Gate A 3 1 Drain A Gate B 4 2 Drain B (Top View) Note: The backside of the package is the source terminal for the transistor. Figure 1. Pin Connections – Diathermy  2019 NXP B.V. RF Device Data NXP Semiconductors MRF24G300HS MRF24G300H 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS 125 Vdc Gate--Source Voltage VGS –8, 0 Vdc Operating Voltage VDD 0 to +55 Vdc IGMAX 42 mA Tstg – 65 to +150 C Case Operating Temperature Range TC – 55 to +150 C Maximum Channel Temperature (1) TCH 350 C Maximum Forward Gate Current, IG (A+B), @ TC = 25C Storage Temperature Range Table 2. Thermal Characteristics Value Unit Thermal Resistance by Infrared Measurement, Active Die Surface--to--Case Case Temperature 125C, PD = 118 W Characteristic Symbol RJC (IR) 0.52 (2) C/W Thermal Resistance by Finite Element Analysis, Channel--to--Case Case Temperature 125C, PD = 118 W RCHC (FEA) 0.72 (3) C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JS--001--2017) 1B, passes 900 V Charge Device Model (per JS--002--2014) 3, passes 1200 V Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 150 — — Vdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 22 mAdc) VGS(th) –3.8 –3.16 –2.3 Vdc Gate--Source Leakage Current (VDS = 0 Vdc, VGS = –5 Vdc) IGSS –10.0 — — mAdc Characteristic Off Characteristics (4) Drain--Source Breakdown Voltage (VGS = –8 Vdc, ID = 24.3 mAdc) On Characteristics (4) Table 5. Ordering Information Device Tape and Reel Information Package MRF24G300HSR5 R5 Suffix = 50 Units, 32 mm Tape Width, 13--inch Reel NI--780S--4L MRF24G300HR5 R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel NI--780H--4L 1. Reliability tests were conducted at 225C. Operation with TCH at 350C will reduce median time to failure. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. 3. RCHC (FEA) must be used for purposes related to reliability and limitations on maximum channel temperature. MTTF may be estimated by the expression MTTF (hours) = 10[A + B/(T + 273)], where T is the channel temperature in degrees Celsius, A = –10.3 and B = 8263. 4. Each side of device measured separately. MRF24G300HS MRF24G300H 2 RF Device Data NXP Semiconductors NOTE: Correct Biasing Sequence for GaN Depletion Mode Transistors Turning the device ON 1. Set VGS to –5 V 2. Turn on VDS to nominal supply voltage (48 V) 3. For Class AB operations increase VGS until desired IDS current is attained 4. Apply RF input power to desired level Turning the device OFF 1. Turn RF power off 2. Reduce VGS down to –5 V 3. Reduce VDS down to 0 V (Adequate time must be allowed for VDS to reduce to 0 V to prevent severe damage to device.) 4. Turn off VGS MRF24G300HS MRF24G300H RF Device Data NXP Semiconductors 3 TYPICAL CHARACTERISTICS 1012 1011 TC = 65C MTTF (HOURS) 1010 85C 109 105C 108 107 106 105 125C 104 103 50 70 90 110 130 150 170 190 210 230 DISSIPATED POWER (W) Note: MTTF value represents the total cumulative operating time under indicated test conditions. MTTF calculator available at http://www.nxp.com. Figure 2. MTTF versus Dissipated Power and Case Temperature — CW MRF24G300HS MRF24G300H 4 RF Device Data NXP Semiconductors MRF24G300HS 2400–2500 MHz REFERENCE CIRCUIT — 5.0 cm  7.0 cm (2.0  2.8) Table 6. 2400–2500 MHz Performance (1) (In NXP MRF24G300HS Reference Circuit, 50 ohm system) VDD = 48 Vdc, VGS(A+B) = –5 Vdc, Pin = 10 W, CW Frequency (MHz) Pout (W) Gps (dB) D (%) 2400 336 15.3 70.4 2450 332 15.2 73.0 2500 307 14.9 74.4 1. All data measured in fixture with device soldered to heatsink. MRF24G300HS MRF24G300H RF Device Data NXP Semiconductors 5 MRF24G300HS 2400–2500 MHz REFERENCE CIRCUIT — 5.0 cm  7.0 cm (2.0  2.8) MRF24G300HS Rev. 2 D121225 C6 C5 C3 C4 C7 VDS R1 VGS R2 C2 C1 Q1 C8 C9 aaa--033536 Note: All data measured in fixture with device soldered to heatsink. Figure 3. MRF24G300HS Reference Circuit Component Layout — 2400–2500 MHz Table 7. MRF24G300HS Reference Circuit Component Designations and Values — 2400–2500 MHz Part Description Part Number Manufacturer C1, C4 20 pF Chip Capacitor 600F200JT250XT ATC C2 1.2 pF Chip Capacitor 600F1R2BT250XT ATC C3 1.0 F Chip Capacitor GCM21BR71H105KA03L Murata C5 27 pF Chip Capacitor 600F270JT250XT ATC C6, C7 10 F Chip Capacitor GRM32EC72A106KE05L Murata C8 10 pF Chip Capacitor 800R100JT500XT ATC C9 0.1 pF Chip Capacitor 600F0R1BT250XT ATC Q1 RF Power GaN Transistor MRF24G300HS NXP R1 10 , 1/4 W Chip Resistor CRCW120610R0JNEA Vishay R2 5.1 , 1/8 W Chip Resistor CRCW08055R10JNEA Vishay PCB Rogers RT6035HTC, 0.030, r = 3.5, 2 oz. Copper D121225 MTL MRF24G300HS MRF24G300H 6 RF Device Data NXP Semiconductors TYPICAL CHARACTERISTICS — 2400–2500 MHz MRF24G300HS REFERENCE CIRCUIT 18 75 D 17 70 65 16 15 60 Gps 14 400 13 350 Pout 12 Pout, OUTPUT POWER (WATTS) Gps, POWER GAIN (dB) 80 VDD = 48 Vdc, Pin = 10 W, VGS(A+B) = –5 Vdc, CW D, DRAIN EFFICIENCY (%) 19 300 250 11 10 200 2400 2410 2420 2430 2440 2450 2460 2470 2480 2490 2500 f, FREQUENCY (MHz) Figure 4. Power Gain, Drain Efficiency and CW Output Power versus Frequency at a Constant Input Power Pout, OUTPUT POWER (WATTS) 400 VDD = 48 Vdc, VGS(A+B) = –5 Vdc, CW f = 2400 MHz 350 300 2500 MHz 250 2450 MHz 200 150 100 50 0 0 4 2 8 6 10 12 14 Pin, INPUT POWER (WATTS) Figure 5. CW Output Power versus Input Power and Frequency Gps, POWER GAIN (dB) 17 Gps 16 90 f = 2500 MHz 2450 MHz 80 2400 MHz 15 D 60 2500 MHz 2450 MHz 14 50 2400 MHz 13 40 30 12 11 10 70 VDD = 48 Vdc, VGS(A+B) = –5 Vdc, CW 0 50 100 150 200 250 300 350 D, DRAIN EFFICIENCY (%) 18 20 10 400 Pout, OUTPUT POWER (WATTS) Figure 6. Power Gain and Drain Efficiency versus CW Output Power and Frequency MRF24G300HS MRF24G300H RF Device Data NXP Semiconductors 7 2400–2500 MHz REFERENCE CIRCUIT f (MHz) Zsource () Zload () 2400 2.55 – j2.96 2.41 – j3.12 2450 2.55 – j2.72 2.13 – j2.98 2500 2.56 – j2.49 1.88 – j2.80 Zsource = Test circuit impedance as measured from gate to ground. Zload 50  = Test circuit impedance as measured from drain to ground. Device Under Test Input Matching Network Zsource Output Matching Network 50  Zload Note: Side A and Side B are tied together for these measurements. Figure 7. Series Equivalent Source and Load Impedance — 2400–2500 MHz MRF24G300HS MRF24G300H 8 RF Device Data NXP Semiconductors PACKAGE DIMENSIONS MRF24G300HS MRF24G300H RF Device Data NXP Semiconductors 9 MRF24G300HS MRF24G300H 10 RF Device Data NXP Semiconductors MRF24G300HS MRF24G300H RF Device Data NXP Semiconductors 11 MRF24G300HS MRF24G300H 12 RF Device Data NXP Semiconductors PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes  AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages  AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins  EB212: Using Data Sheet Impedances for RF LDMOS Devices Software  RF High Power Model  .s2p File (Each side of device measured separately.) Development Tools  Printed Circuit Boards REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Sept. 2019 Description  Initial release of data sheet MRF24G300HS MRF24G300H RF Device Data NXP Semiconductors 13 How to Reach Us: Home Page: nxp.com Web Support: nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. 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E 2019 NXP B.V. MRF24G300HS MRF24G300H Document Number: MRF24G300HS Rev. 0, 09/2019 14 RF Device Data NXP Semiconductors