MRF281SR1

Freescale Semiconductor Technical Data Document Number: MRF281 Rev. 6, 10/2008 RF Power Field Effect Transistors MRF281SR1 MRF281ZR1 Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts in commercial and industrial applications. • Specified Two--Tone Performance @ 1930 MHz, 26 Volts Output Power — 4 Watts PEP Power Gain — 11 dB Efficiency — 30% Intermodulation Distortion — --29 dBc • Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 4 Watts CW Output Power Features • Excellent Thermal Stability • Characterized with Series Equivalent Large--Signal Impedance Parameters • S--Parameter Characterization at High Bias Levels • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. 1930--1990 MHz, 4 W, 26 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFETs CASE 458B--03, STYLE 1 NI--200S MRF281SR1 CASE 458C--03, STYLE 1 NI--200Z MRF281ZR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS ± 20 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 20 0.115 W W/°C Storage Temperature Range Tstg -- 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 5.74 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 74 — Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) IDSS — — 10 μAdc Gate--Source Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS — — 1 μAdc Characteristic ARCHIVE INFORMATION ARCHIVE INFORMATION N--Channel Enhancement--Mode Lateral MOSFETs Off Characteristics Drain--Source Breakdown Voltage (VGS = 0, ID = 10 μAdc) NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2008, 2010. All rights reserved. RF Device Data Freescale Semiconductor MRF281SR1 MRF281ZR1 1 Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Gate Threshold Voltage (VDS = 10 Vdc, ID = 20 μAdc) VGS(th) 2.4 3.2 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 25 mAdc) VGS(q) 3 4.1 5 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 0.1 A) VDS(on) 0.18 0.24 0.30 Vdc Input Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Ciss — 5.5 — pF Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Coss — 3.3 — pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Crss — 0.17 — pF Gps 11 12.5 — dB η 30 — — % Input Return Loss (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IRL — --16 --10 dB Intermodulation Distortion (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IMD — --31 — dBc On Characteristics Functional Tests (In Freescale Test Fixture) Common--Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 4 W, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) ARCHIVE INFORMATION ARCHIVE INFORMATION Dynamic Characteristics MRF281SR1 MRF281ZR1 2 RF Device Data Freescale Semiconductor Zo = 25 Ω f = 2000 MHz ARCHIVE INFORMATION f = 2000 MHz ZOL* f = 1500 MHz f = 1500 MHz VDD = 26 V, IDQ = 25 mA, Pout = 4 W (PEP) f MHz Zin Zin Ω ZOL* Ω 1500 3.15 -- j5.3 15.5 -- j13.6 1600 3.1 -- j3.8 14.7 -- j12.5 1700 3.1 -- j2.3 14.0 -- j11.7 1800 3.1 -- j0.7 13.4 -- j11.0 1900 3.1 + j0.9 12.8 -- j10.1 2000 3.1 + j2.4 12.2 -- j9.2 = Complex conjugate of source impedance. ARCHIVE INFORMATION Zin ZOL* = Complex conjugate of the optimum load impedance at given output power, voltage, IMD, bias current and frequency. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 1. Series Equivalent Input and Output Impedance MRF281SR1 MRF281ZR1 RF Device Data Freescale Semiconductor 3 Table 4. Common Source S--Parameters at VDS = 26 Vdc, ID = 250 mAdc S11 S21 S12 S22 |S11| ∠φ dB ∠φ |S12| ∠φ |S22| ∠φ 0.1 .982 -28 18.9 160 .008 73 .851 -13 0.2 .947 -52 17.0 143 .015 58 .811 -25 0.3 .912 -73 15.0 129 .019 45 .770 -33 0.4 .886 -90 12.9 117 .022 36 .741 -42 0.5 .859 -103 11.1 108 .022 28 .719 -47 0.6 .854 -114 9.69 100 .023 23 .718 -51 0.7 .841 -123 8.54 93 .022 18 .709 -56 0.8 .837 -131 7.57 87 .021 15 .714 -59 0.9 .838 -138 6.69 81 .019 12 .719 -62 1.0 .841 -143 6.01 76 .018 11 .728 -64 1.1 .840 -149 5.41 72 .015 12 .742 -66 1.2 .849 -153 4.91 68 .013 13 .745 -68 1.3 .848 -158 4.51 64 .012 18 .758 -69 1.4 .856 -162 4.12 60 .010 26 .769 -70 1.5 .858 -167 3.78 57 .009 36 .786 -70 1.6 .871 -170 3.50 54 .008 54 .797 -72 1.7 .868 -173 3.22 51 .009 69 .808 -71 1.8 .870 -176 3.00 49 .009 82 .823 -72 1.9 .872 -180 2.80 46 .011 95 .828 -72 2.0 .877 178 2.63 44 .013 104 .845 -72 2.1 .876 174 2.47 41 .015 109 .843 -72 2.2 .880 171 2.36 39 .018 111 .859 -71 2.3 .882 168 2.21 36 .021 114 .858 -72 2.4 .886 165 2.12 34 .024 114 .872 -70 2.5 .896 162 1.97 32 .027 115 .863 -70 2.6 .897 158 1.89 29 .029 117 .873 -69 ARCHIVE INFORMATION ARCHIVE INFORMATION f GHz MRF281SR1 MRF281ZR1 4 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS ccc T A M B M M M NOTES: 1. CONTROLLING DIMENSIONS: INCHES. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. ALL DIMENSIONS ARE SYMMETRICAL ABOUT CENTERLINE UNLESS OTHERWISE NOTED. (INSULATOR) R 1 2X ccc M B M Z K S (INSULATOR) ccc M T A M 2 ARCHIVE INFORMATION T A M B B M D 2X bbb T A M B M 3 M B (FLANGE) ccc T A M B M M DIM A B C D E F H K M N R S Z bbb ccc INCHES MIN MAX 0.180 0.190 0.140 0.150 0.082 0.116 0.047 0.053 0.004 0.010 0.004 0.006 0.025 0.031 0.060 0.110 0.197 0.203 0.177 0.183 0.147 0.153 0.157 0.163 -----0.020 0.010 REF 0.015 REF MILLIMETERS MIN MAX 4.572 4.83 3.556 3.81 2.083 2.946 1.194 1.346 0.102 0.254 0.102 0.152 0.635 0.787 1.524 2.794 5.004 5.156 4.496 4.648 3.734 3.886 3.988 4.14 -----0.508 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE N (LID) E F C H A T A CASE 458B--03 ISSUE E NI--200S MRF281SR1 SEATING PLANE (FLANGE) ccc T A M M B M F M (INSULATOR) 4X Z R ccc 1 Y (LID) M T A M B M 3 S B (INSULATOR) ccc M T A M B (FLANGE) M B 2 2X D bbb M T A ccc M B M T A 2X K M B M M N (LID) H E A C A (FLANGE) T SEATING PLANE NOTES: 1. CONTROLLING DIMENSIONS: INCHES. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H (PACKAGE COPLANARITY): THE BOTTOM OF LEADS AND REFERENCE PLANE T MUST BE COPLANAR WITHIN DIMENSION H. DIM A B C D E F H K M N R S Y Z bbb ccc INCHES MIN MAX 0.180 0.190 0.140 0.150 0.082 0.116 0.047 0.053 0.004 0.010 0.004 0.006 0.000 0.004 0.050 0.090 0.197 0.203 0.177 0.183 0.147 0.153 0.157 0.163 0.020 0.040 ------ R .020 .010 REF .015 REF MILLIMETERS MIN MAX 4.572 4.830 3.556 3.810 2.083 2.946 1.194 1.346 0.102 0.254 0.102 0.152 0.000 0.102 1.270 2.286 5.004 5.156 4.496 4.648 3.734 3.886 3.988 4.140 0.508 1.016 ------ R .508 0.254 REF 0.381 REF ARCHIVE INFORMATION 4X (LID) STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 458C--03 ISSUE E NI--200Z MRF281ZR1 MRF281SR1 MRF281ZR1 RF Device Data Freescale Semiconductor 5 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Date 6 Oct. 2008 Description • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232, p. 1, 2, and Product Discontinuance Notification number, PCN13420, adding applicable overlay ARCHIVE INFORMATION • Added Product Documentation and Revision History, p. 6 Dec. 2010 • Data sheet archived. Parts no longer manufactured. ARCHIVE INFORMATION Revision MRF281SR1 MRF281ZR1 6 RF Device Data Freescale Semiconductor How to Reach Us: Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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ARCHIVE INFORMATION ARCHIVE INFORMATION Home Page: www.freescale.com Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008, 2010. All rights reserved. MRF281SR1 MRF281ZR1 Document Number: RF Device Data MRF281 Rev. 6, 10/2008 Freescale Semiconductor 7