MRF282SR1

Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 15, 5/2006 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. • Specified Two--Tone Performance @ 2000 MHz, 26 Volts Output Power — 10 Watts PEP Power Gain — 10.5 dB Efficiency — 28% Intermodulation Distortion — --31 dBc • Specified Single--Tone Performance @ 2000 MHz, 26 Volts Output Power — 10 Watts CW Power Gain — 9.5 dB Efficiency — 35% • Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 10 Watts CW Output Power Features • Excellent Thermal Stability • Characterized with Series Equivalent Large--Signal Impedance Parameters • RoHS Compliant • Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. 2000 MHz, 10 W, 26 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFETs CASE 458B--03, STYLE 1 NI--200S MRF282SR1 CASE 458C--03, STYLE 1 NI--200Z MRF282ZR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS ± 20 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 60 0.34 W W/°C Storage Temperature Range Tstg -- 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 4.2 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case ARCHIVE INFORMATION ARCHIVE INFORMATION N--Channel Enhancement--Mode Lateral MOSFETs Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) IDSS — — 1.0 μAdc Gate--Source Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS — — 1.0 μAdc Characteristic Off Characteristics Drain--Source Breakdown Voltage (VGS = 0, ID = 10 μAdc) NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor MRF282SR1 MRF282ZR1 1 Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Gate Threshold Voltage (VDS = 10 Vdc, ID = 50 μAdc) VGS(th) 2.0 3.0 4.0 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 0.5 Adc) VDS(on) — 0.4 0.6 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 75 mAdc) VGS(q) 3.0 4.0 5.0 Vdc Input Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Ciss — 15 — pF Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Coss — 8.0 — pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Crss — 0.45 — pF Common--Source Power Gain (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Gps 10.5 11.5 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) η 28 — — % Intermodulation Distortion (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IMD — --31 --28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IRL — --14 --9 dB Common--Source Power Gain (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Gps 10.5 11.5 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) η 28 — — % Intermodulation Distortion (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IMD — --31 --28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IRL — --14 --9 dB Common--Source Power Gain (VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz) Gps 9.5 11.5 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz) η 35 40 — % On Characteristics Functional Tests (In Freescale Test Fixture) ARCHIVE INFORMATION ARCHIVE INFORMATION Dynamic Characteristics MRF282SR1 MRF282ZR1 2 RF Device Data Freescale Semiconductor VGG RF INPUT R4 + C3 B1 R1 C4 B2 C5 Z6 Z12 C8 C7 C10 Z1 Z2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z3 C2 Z4 Z7 C6 B4 B3 C11 + C16 C13 Z11 Z5 C1 ARCHIVE INFORMATION R5 R3 C9 0.491″ x 0.080″ Microstrip 0.253″ x 0.080″ Microstrip 0.632″ x 0.080″ Microstrip 0.567″ x 0.080″ Microstrip 1.139″ x 0.055″ Microstrip 0.236″ x 0.055″ Microstrip 0.180″ x 0.325″ Microstrip 0.301″ x 0.325″ Microstrip 0.439″ x 0.325″ Microstrip 0.055″ x 0.325″ Microstrip Z10 Z9 Z8 DUT Z13 C14 C12 Z11 Z12 Z13 Z14 Z15 Z16 Raw Board Material Z14 Z15 C15 Z16 RF OUTPUT C17 0.636″ x 0.055″ Microstrip 0.303″ x 0.055″ Microstrip 0.463″ x 0.080″ Microstrip 0.105″ x 0.080″ Microstrip 0.452″ ± 0.085″ x 0.080″ Microstrip 0.910″ ± 0.085″ x 0.080″ Microstrip 0.030″ Glass Teflon®, 2 oz Copper, 3″ x 5″ Dimensions, Arlon GX0300--55--22, εr = 2.55 Figure 1. 1930 -- 2000 MHz Broadband Test Circuit Schematic Table 4. 1930 -- 2000 MHz Broadband Test Circuit Component Designations and Values Designators VDD C18 Description B1, B4 Surface Mount Ferrite Beads, 0.120″ x 0.333″ x 0.100″, Fair Rite #2743019446 B2, B3 Surface Mount Ferrite Beads, 0.120″ x 0.170″ x 0.100″, Fair Rite #2743029446 C1, C2, C9 0.8--8.0 pF Variable Capacitors, Johanson Gigatrim #27291SL C3 10 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet #T495X106K035AS4394 C4, C5, C13, C16 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS C6 200 pF Chip Capacitor, ATC #100B201JCA500X C7 18 pF Chip Capacitor, ATC #100B180KP500X C8 39 pF Chip Capacitor, ATC #100B390JCA500X C10 27 pF Chip Capacitor, ATC #100B270JCA500X C11 1.2 pF Chip Capacitor, ATC #100B1R2CCA500X C12 0.6--4.5 pF Variable Capacitor, Johanson Gigatrim #27271SL C14 0.5 pF Chip Capacitor, ATC #100B0R5BCA500X C15 15 pF Chip Capacitor, ATC #100B150JCA500X C17 0.1 pF Chip Capacitor, ATC #100B0R1BCA500X C18 22 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet #T491X226K035AS4394 R1 560 kΩ, 1/4 W Chip Resistor, 0.08″ x 0.13″ R2, R5 12 Ω, 1/4 W Chip Resistors, 0.08″ x 0.13″, Garrett Instruments #RM73B2B120JT R3, R4 91 Ω, 1/4 W Chip Resistors, 0.08″ x 0.13″, Garrett Instruments #RM73B2B910JT WS1, WS2 Beryllium Copper Wear Blocks 0.010″ x 0.235″ x 0.135″ NOM ARCHIVE INFORMATION R2 Brass Banana Jack and Nut Red Banana Jack and Nut Green Banana Jack and Nut Type “N” Jack Connectors, Omni--Spectra # 3052--1648--10 4--40 Ph Head Screws, 0.125″ Long 4--40 Ph Head Screws, 0.188″ Long 4--40 Ph Head Screws, 0.312″ Long 4--40 Ph Rec. Hd. Screws, 0.438″ Long RF Circuit Board 3″ x 5″ Copper Clad PCB, Glass Teflon® MRF282SR1 MRF282ZR1 RF Device Data Freescale Semiconductor 3 R1 C5 C4 R2 C18 C13 C7 B2 R5 C8 B1 R3 R4 B4 C10 B3 C11 C16 C3 WS1 C15 WS2 C14 ARCHIVE INFORMATION C1 C2 C9 C17 C12 MRF282 Rev--0 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 1930 -- 2000 MHz Broadband Test Circuit Component Layout ARCHIVE INFORMATION C6 MRF282SR1 MRF282ZR1 4 RF Device Data Freescale Semiconductor + C1 VGG RF INPUT B1 L1 Z2 Z1 ARCHIVE INFORMATION C4 Z3 C2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 R3 R2 L2 B2 Z4 C7 C6 B3 Z5 C5 L3 Z6 C8 Z7 C14 C11 DUT C9 C3 0.122″ x 0.08″ Microstrip 0.650″ x 0.08″ Microstrip 0.160″ x 0.08″ Microstrip 0.030″ x 0.08″ Microstrip 0.045″ x 0.08″ Microstrip 0.291″ x 0.08″ Microstrip 0.483″ x 0.330″ Microstrip Z8 Z9 Z10 Z11 Raw Board Material Z8 R4 R5 R6 B5 C10 B4 C13 B6 L4 Z9 C12 Z10 L5 C16 C15 VDD RF OUTPUT Z11 C17 0.414″ x 0.330″ Microstrip 0.392″ x 0.08″ Microstrip 0.070″ x 0.08″ Microstrip 1.110″ x 0.08″ Microstrip 0.030″ Glass Teflon®, 2 oz Copper, 3″ x 5″ Dimensions, Arlon GX0300--55--22, εr = 2.55 Figure 3. 1810 -- 1880 MHz Broadband Test Circuit Schematic Table 5. 1810 -- 1880 MHz Broadband Test Circuit Component Designations and Values Designators + Description B1, B2, B3, B4, B5, B6 Surface Mount Ferrite Beads, 0.120″ x 0.170″ x 0.100″, Fair Rite #2743029446 C1, C16 470 μF, 63 V Electrolytic Capacitors, Mallory #SME63UB471M12X25L C2, C9, C12, C17 0.6--4.5 pF Variable Capacitors, Johanson Gigatrim #27271SL C3 0.8--8.0 pF Variable Capacitor, Johanson Gigatrim #27291SL C4, C13 0.1 μF Chip Capacitors, Kemet #CDR33BX104AKWS C5, C14 100 pF Chip Capacitors, ATC #100B101JCA500X C6, C8, C11, C15 12 pF Chip Capacitors, ATC #100B120JCA500X C7, C10 1000 pF Chip Capacitors, ATC #100B102JCA50X L1 3 Turns, 27 AWG, 0.087″ OD, 0.050″ ID, 0.053″ Long, 6.0 nH L2 5 Turns, 27 AWG, 0.087″ OD, 0.050″ ID, 0.091″ Long, 15 nH L3, L4 9 Turns, 26 AWG, 0.080″ OD, 0.046″ ID, 0.170″ Long, 30.8 nH L5 4 Turns, 27 AWG, 0.087″ OD, 0.050″ ID, 0.078″ Long, 10 nH R1, R2, R3 12 Ω, 1/8 W Fixed Film Chip Resistors, Garrett Instruments #RM73B2B120JT R4, R5, R6 0.08″ x 0.13″ Resistors, Garrett Instruments #RM73B2B120JT W1, W2 Beryllium Copper 0.010″ x 0.110″ x 0.210″ ARCHIVE INFORMATION R1 MRF282SR1 MRF282ZR1 RF Device Data Freescale Semiconductor 5 VSUPPLY + R5 R1 R2 C1 VDD Q1 Q2 R4 ARCHIVE INFORMATION R7 B2 B1 R6 C13 + C2 C4 C5 B3 C6 C8 R8 C9 + R9 C14 R10 C16 C18 C20 L2 RF INPUT L1 Z1 C3 Z1 Z2 Z3 Z4 Z5 Z6 Z2 DUT Z3 C7 Z5 Z6 Z7 Z4 C11 C10 0.624″ x 0.08″ Microstrip 0.725″ x 0.08″ Microstrip 0.455″ x 0.08″ Microstrip 0.530″ x 0.330″ Microstrip 0.280″ x 0.330″ Microstrip 0.212″ x 0.330″ Microstrip C15 C12 Z7 Z8 Z9 Raw Board Material C17 Z9 C19 0.408″ x 0.08″ Microstrip 0.990″ x 0.08″ Microstrip 0.295″ x 0.08″ Microstrip 0.030″ Glass Teflon®, 2 oz Copper, 3″ x 5″ Dimensions, Arlon GX0300--55--22, εr = 2.55 Figure 4. Class A Broadband Test Circuit Schematic Table 6. Class A Broadband Test Circuit Component Designations and Values Designators Z8 Description B1, B2, B3 Ferrite Beads, Ferroxcube #56--590--65--3B C1, C20 470 μF, 63 V Electrolytic Capacitors, Mallory #SME63V471M12X25L C2 0.01 μF Chip Capacitor, ATC #100B103JCA50X C3, C10, C15 0.6--4.5 pF Variable Capacitors, Johanson #27271SL C4, C16 0.02 μF Chip Capacitors, ATC #100B203JCA50X C5 100 μF, 50 V Electrolytic Capacitor, Mallory #SME50VB101M12X256 C6, C7, C9, C14, C17 12 pF Chip Capacitors, ATC #100B120JCA500X C8, C13 51 pF Chip Capacitors, ATC #100B510JCA500X C11, C12 0.3 pF Chip Capacitors, ATC #100B0R3CCA500X C18 0.1 μF Chip Capacitor, Kemet #CDR33BX104AKWS C19 0.4--2.5 pF Variable Capacitor, Johanson #27285 L1 8 Turns, 0.042″ ID, 24 AWG, Enamel L2 9 Turns, 0.046″ ID, 26 AWG, Enamel Q1 NPN, 15 W, Bipolar Transistor, MJD310 Q2 PNP, 15 W, Bipolar Transistor, MJD320 R1 200 Ω, 1/4 W Axial Resistor R2 1.0 kΩ, 1/2 W Potentiometer, Bourns R3 13 kΩ, 1/4 W Axial Resistor R4, R6, R7 390 Ω, 1/8 W Chip Resistors, Garrett Instruments #RM73B2B391JT R5 1.0 Ω, 10 W 1% Resistor, Dale #RE65G1R00 R8, R9, R10 12 Ω, 1/8 W Chip Resistors, Garrett Instruments #RM73B2B120JT Input/Output Type N Flange Mount RF55--22 Connectors, Omni--Spectra VDD ARCHIVE INFORMATION R3 RF OUTPUT MRF282SR1 MRF282ZR1 6 RF Device Data Freescale Semiconductor f = 2000 MHz Zin f = 1800 MHz f = 2000 MHz ZOL* f = 1800 MHz VDD = 26 V, IDQ = 75 mA, Pout = 10 W (PEP) f MHz Zin Zin Ω ZOL* Ω 1800 2.1 + j1.0 3.8 -- j0.15 1860 2.05 + j1.15 3.77 -- j0.13 1900 2.0 + j1.2 3.75 -- j0.1 1960 1.9 + j1.4 3.65 + j0.1 2000 1.85 + j1.6 3.55 + j0.2 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at given output power, voltage, IMD, bias current and frequency. Input Matching Network Output Matching Network Device Under Test Z in ARCHIVE INFORMATION ARCHIVE INFORMATION Zo = 5 Ω Z * OL Figure 5. Series Equivalent Input and Output Impedence MRF282SR1 MRF282ZR1 RF Device Data Freescale Semiconductor 7 ARCHIVE INFORMATION ARCHIVE INFORMATION NOTES MRF282SR1 MRF282ZR1 8 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION ARCHIVE INFORMATION NOTES MRF282SR1 MRF282ZR1 RF Device Data Freescale Semiconductor 9 ARCHIVE INFORMATION ARCHIVE INFORMATION NOTES MRF282SR1 MRF282ZR1 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS ccc T A M B M M M NOTES: 1. CONTROLLING DIMENSIONS: INCHES. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. ALL DIMENSIONS ARE SYMMETRICAL ABOUT CENTERLINE UNLESS OTHERWISE NOTED. (INSULATOR) R 1 2X ccc M B M Z K S (INSULATOR) ccc M T A M 2 ARCHIVE INFORMATION T A M B B M D 2X bbb T A M B M 3 M B (FLANGE) ccc T A M B M M DIM A B C D E F H K M N R S Z bbb ccc INCHES MIN MAX 0.180 0.190 0.140 0.150 0.082 0.116 0.047 0.053 0.004 0.010 0.004 0.006 0.025 0.031 0.060 0.110 0.197 0.203 0.177 0.183 0.147 0.153 0.157 0.163 -----0.020 0.010 REF 0.015 REF MILLIMETERS MIN MAX 4.572 4.83 3.556 3.81 2.083 2.946 1.194 1.346 0.102 0.254 0.102 0.152 0.635 0.787 1.524 2.794 5.004 5.156 4.496 4.648 3.734 3.886 3.988 4.14 -----0.508 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE N (LID) E F C H A T A CASE 458B--03 ISSUE E NI--200S MRF282SR1 SEATING PLANE (FLANGE) ccc T A M M B M F M (INSULATOR) 4X Z R ccc 1 Y (LID) M T A M B M 3 S B (INSULATOR) ccc M T A M B (FLANGE) M B 2 2X D bbb M T A ccc M B M T A 2X K M B M M N (LID) H E A C A (FLANGE) T SEATING PLANE NOTES: 1. CONTROLLING DIMENSIONS: INCHES. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H (PACKAGE COPLANARITY): THE BOTTOM OF LEADS AND REFERENCE PLANE T MUST BE COPLANAR WITHIN DIMENSION H. DIM A B C D E F H K M N R S Y Z bbb ccc INCHES MIN MAX 0.180 0.190 0.140 0.150 0.082 0.116 0.047 0.053 0.004 0.010 0.004 0.006 0.000 0.004 0.050 0.090 0.197 0.203 0.177 0.183 0.147 0.153 0.157 0.163 0.020 0.040 ------ R .020 .010 REF .015 REF MILLIMETERS MIN MAX 4.572 4.830 3.556 3.810 2.083 2.946 1.194 1.346 0.102 0.254 0.102 0.152 0.000 0.102 1.270 2.286 5.004 5.156 4.496 4.648 3.734 3.886 3.988 4.140 0.508 1.016 ------ R .508 0.254 REF 0.381 REF ARCHIVE INFORMATION 4X (LID) STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 458C--03 ISSUE E NI--200Z MRF282ZR1 MRF282SR1 MRF282ZR1 RF Device Data Freescale Semiconductor 11 REVISION HISTORY The following table summarizes revisions to this document. Date 15 Oct. 2008 Description • MRF282 Rev. 15 data sheet archived. Data sheet split due to change in part life cycle. See MRF282--1 Rev. 16 for MRF282SR1 and MRF282--2 Rev. 17 for MRF282ZR1. ARCHIVE INFORMATION ARCHIVE INFORMATION Revision MRF282SR1 MRF282ZR1 12 RF Device Data Freescale Semiconductor Home Page: www.freescale.com E--mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1--800--521--6274 or +1--480--768--2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1--8--1, Shimo--Meguro, Meguro--ku, Tokyo 153--0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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ARCHIVE INFORMATION ARCHIVE INFORMATION How to Reach Us: Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006, 2008. All rights reserved. MRF282SR1 MRF282ZR1 Document Number: RF Device Data MRF282 Rev. 15, 5/2006 Freescale Semiconductor 13