MRF300AN-50MHZ

NXP Semiconductors Technical Data Document Number: MRF300AN Rev. 2, 06/2019 RF Power LDMOS Transistors MRF300AN MRF300BN High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These devices are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely rugged and exhibit high performance up to 250 MHz. Typical Performance: VDD = 50 Vdc Frequency (MHz) Pout (W) Gps (dB) D (%) 13.56 (1) 320 CW 28.1 79.7 27 (2) 330 CW 27.4 80.0 40.68 (3) 330 CW 28.2 79.0 320 CW 27.3 73.0 81.36 (5) 325 CW 25.1 77.5 144 (6) 320 CW 23.0 73.0 330 Peak 20.4 75.5 Signal Type CW 50 (4) 230 (7) Pulse (100 sec, 20% Duty Cycle) 1.8–250 MHz, 300 W CW, 50 V WIDEBAND RF POWER LDMOS TRANSISTORS G S D TO--247--3 MRF300AN Load Mismatch/Ruggedness Frequency (MHz) 1. 2. 3. 4. 5. 6. 7. Signal Type VSWR Pin (W) Test Voltage 40.68 Pulse (100 sec, 20% Duty Cycle) > 65:1 at all Phase Angles 2 Peak (3 dB Overdrive) 50 No Device Degradation 230 Pulse (100 sec, 20% Duty Cycle) > 65:1 at all Phase Angles 6 Peak (3 dB Overdrive) 50 No Device Degradation Measured in 13.56 MHz reference circuit (page 5). Measured in 27 MHz reference circuit (page 10). Measured in 40.68 MHz reference circuit (page 15). Measured in 50 MHz reference circuit (page 20). Measured in 81.36 MHz reference circuit (page 25). Measured in 144 MHz reference circuit (page 30). Measured in 230 MHz fixture (page 35). Result D  2018–2019 NXP B.V. RF Device Data NXP Semiconductors S G TO--247--3 MRF300BN G Features  Mirror pinout versions (A and B) to simplify use in a push--pull, two--up configuration  Characterized from 30 to 50 V  Suitable for linear application  Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation  Included in NXP product longevity program with assured supply for a minimum of 15 years after launch Typical Applications  Industrial, scientific, medical (ISM) – Laser generation – Plasma etching – Particle accelerators – MRI and other medical applications – Industrial heating, welding and drying systems  Radio and VHF TV broadcast  HF and VHF communications  Switch mode power supplies D S Backside Note: Exposed backside of the package also serves as a source terminal for the transistor. MRF300AN MRF300BN 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS –0.5, +133 Vdc Gate--Source Voltage VGS –6.0, +10 Vdc Operating Voltage VDD 50 Vdc Storage Temperature Range Tstg – 65 to +150 C Case Operating Temperature Range TC –40 to +150 C Operating Junction Temperature Range (1,2) TJ –40 to +175 C Total Device Dissipation @ TC = 25C Derate above 25C PD 272 1.82 W W/C Symbol Value (2,3) Unit Thermal Resistance, Junction to Case CW: Case Temperature 76C, 300 W CW, 50 Vdc, IDQ = 50 mA, 40.68 MHz RJC 0.55 C/W Thermal Impedance, Junction to Case Pulse: Case Temperature 74C, 300 W Peak, 100 sec Pulse Width, 20% Duty Cycle, 50 Vdc, IDQ = 100 mA, 230 MHz ZJC 0.13 C/W Table 2. Thermal Characteristics Characteristic Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JS--001--2017) 2, passes 2500 V Charge Device Model (per JS--002--2014) C3, passes 1200 V Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 0 225 (4) C Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IGSS — — 1 Adc 133 — — Vdc IDSS — — 10 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 840 Adc) VGS(th) 1.7 2.2 2.7 Vdc Gate Quiescent Voltage (VDS = 50 Vdc, ID = 100 mAdc) VGS(Q) — 2.5 — Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) — 0.16 — Vdc Forward Transconductance (VDS = 10 Vdc, ID = 30 Adc) gfs — 28 — S Off Characteristics Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 50 mAdc) Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) V(BR)DSS On Characteristics 1. 2. 3. 4. Continuous use at maximum temperature will affect MTTF. MTTF calculator available at http://www.nxp.com/RF/calculators. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. Peak temperature during reflow process must not exceed 225C. (continued) MRF300AN MRF300BN 2 RF Device Data NXP Semiconductors Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Reverse Transfer Capacitance (VDS = 50 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.31 — pF Output Capacitance (VDS = 50 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 104 — pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc  30 mV(rms)ac @ 1 MHz) Ciss — 403 — pF Dynamic Characteristics Typical Performance — 230 MHz (In NXP 230 MHz Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pin = 3 W, f = 230 MHz, 100 sec Pulse Width, 20% Duty Cycle Common--Source Amplifier Output Power Pout — 330 — W Drain Efficiency D — 75.5 — % Input Return Loss IRL — –21 — dB Table 6. Load Mismatch/Ruggedness (In NXP 230 MHz Fixture, 50 ohm system) IDQ = 100 mA Frequency (MHz) 230 Signal Type VSWR Pin (W) Pulse (100 sec, 20% Duty Cycle) > 65:1 at all Phase Angles 6 Peak (3 dB Overdrive) Test Voltage, VDD Result 50 No Device Degradation Table 7. Ordering Information — Device Device Shipping Information Package MRF300AN MRF300BN MPQ = 240 devices (30 devices per tube, 8 tubes per box) TO--247--3L (Pin 1: Gate, Pin 2: Source, Pin 3: Drain) TO--247--3L (Pin 1: Drain, Pin 2: Source, Pin 3: Gate) Table 8. Ordering Information — Reference Circuits Order Number Description MRF300AN-13MHZ MRF300AN 13.56 MHz Reference Circuit MRF300AN-27MHZ MRF300AN 27 MHz Reference Circuit MRF300AN-40MHZ MRF300AN 40.68 MHz Reference Circuit MRF300AN-50MHZ MRF300AN 50 MHz Reference Circuit MRF300AN-81MHZ MRF300AN 81.36 MHz Reference Circuit MRF300AN-144MHZ MRF300AN 144 MHz Reference Circuit MRF300AN-230MHZ MRF300AN 230 MHz Test Fixture MRF300AN MRF300BN RF Device Data NXP Semiconductors 3 TYPICAL CHARACTERISTICS 1000 108 Measured with 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc VDD = 50 Vdc ID = 6.2 Amps 100 107 Coss MTTF (HOURS) C, CAPACITANCE (pF) Ciss 10 1 10 8.7 Amps 105 Crss 0 7.8 Amps 106 20 30 40 50 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 1. Capacitance versus Drain--Source Voltage 104 90 110 130 170 150 190 TJ, JUNCTION TEMPERATURE (C) Note: MTTF value represents the total cumulative operating time under indicated test conditions. MTTF calculator available at http://www.nxp.com/RF/calculators. Figure 2. MTTF versus Junction Temperature — CW MRF300AN MRF300BN 4 RF Device Data NXP Semiconductors 13.56 MHz REFERENCE CIRCUIT (MRF300AN) Table 9. 13.56 MHz Performance (In NXP Reference Circuit, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pin = 0.5 W, CW Frequency (MHz) Pout (W) Gps (dB) D (%) 13.56 320 28.1 79.7 MRF300AN MRF300BN RF Device Data NXP Semiconductors 5 13.56 MHz REFERENCE CIRCUIT (MRF300AN) — 2  3 (5.1 cm  7.6 cm) R4 R3 R5 C7 C8 C 11 C14 R6 J1 D108224 D1 JP1 L3 R2 C9 C6 C10 J2 C13 C12 C4 C5 L4 J4 C3 C2 L5 L1 L2 R1 J3 C1 Q1 Rev. 0 aaa--034124 Figure 3. MRF300AN 13.56 MHz Reference Circuit Component Layout MRF300AN MRF300BN 6 RF Device Data NXP Semiconductors 13.56 MHz REFERENCE CIRCUIT (MRF300AN) Table 10. MRF300AN Reference Circuit Component Designations and Values — 13.56 MHz Part Description Part Number Manufacturer C1 1 nF Chip Capacitor GRM2165C2A102JA01D Murata C2, C3, C4 430 pF Chip Capacitor 800B431JT200XT ATC C5 75 pF Chip Capacitor 800B750JT500XT ATC C6 330 pF Chip Capacitor 800B331JT200XT ATC C7, C8, C9, C10 6.8 nF Chip Capacitor GRM32QR73A682KW01L Murata C11 10 F Chip Capacitor GRM32EC72A106KE05L Murata C12 10 nF Chip Capacitor GRM21BR72A103KA01B Murata C13 1 F Chip Capacitor GJ821BR71H105KA12L Murata C14 220 F, 100 V Electrolytic Capacitor MCGPR100V227M16X26 Multicomp D1 8.2 V Zener Diode SMAJ4738A--TP Micro Commercial Components J1 Right Angle Breakaway Headers (2 Pins) 9-146305-0 TE Connectivity J2, J3, J4 Jumper Copper Foil JP1 Shunt (J1) 382811-8 TE Connectivity L1 390 nH Chip Inductor 0805CS-391XJLC ATC L2 33 nF Air Core Inductor 2014VS-33NMEB Coilcraft L3, L4 140 nH Air Core Inductor 1010VS-141ME Coilcraft L5 250 nH Air Core Inductor 2014VS-251NMEB Coilcraft Q1 RF Power LDMOS Transistor MRF300AN NXP R1 33 , 1/8 W Chip Resistor CRCW080533R0FKEA KOA Speer R2 5.0 k Multi-turn Cermet Trimming Potentiometer 3224W-1-502E Bourns R3 12 k, 1/4 W Chip Resistor CRCW120612K0FNEA Vishay R4 27 k, 1/4 W Chip Resistor CRCW120627K0FKEA Vishay R5, R6 20 k, 1/4 W Chip Resistor CRCW120620K0FKEA Vishay PCB FR4 0.087, r = 4.8, 2 oz. Copper D108224 MTL MRF300AN MRF300BN RF Device Data NXP Semiconductors 7 TYPICAL CHARACTERISTICS — 13.56 MHz REFERENCE CIRCUIT (MRF300AN) 350 VDD = 50 Vdc, f = 13.56 MHz, CW 300 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) 350 Pin = 0.5 W 250 Pin = 0.25 W 200 150 100 50 0 0 0.5 1 2 1.5 3 2.5 3.5 300 250 200 150 100 50 0 4 VDD = 50 Vdc, IDQ = 100 mA, f = 13.56 MHz, CW 0.1 0 0.2 VGS, GATE--SOURCE VOLTAGE (VOLTS) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Pin, INPUT POWER (WATTS) Figure 4. CW Output Power versus Gate--Source Voltage at a Constant Input Power f (MHz) P1dB (W) P3dB (W) 13.56 285 322 Figure 5. CW Output Power versus Input Power 34 100 VDD = 50 Vdc, IDQ = 100 mA, f = 13.56 MHz, CW 90 80 Gps, POWER GAIN (dB) 32 31 70 Gps 30 60 50 29 28 40 D 27 30 26 20 25 10 24 0 50 100 150 200 250 300 D, DRAIN EFFICIENCY (%) 33 0 350 Pout, OUTPUT POWER (WATTS) Figure 6. Power Gain and Drain Efficiency versus CW Output Power MRF300AN MRF300BN 8 RF Device Data NXP Semiconductors 13.56 MHz REFERENCE CIRCUIT (MRF300AN) f (MHz) Zsource  Zload  13.56 12.0 + j5.2 5.1 – j1.0 Zsource = Test circuit impedance as measured from gate to ground. Zload 50  = Test circuit impedance as measured from drain to ground. Device Under Test Input Matching Network Zsource Output Matching Network 50  Zload Figure 7. Series Equivalent Source and Load Impedance — 13.56 MHz MRF300AN MRF300BN RF Device Data NXP Semiconductors 9 27 MHz REFERENCE CIRCUIT (MRF300AN) Table 11. 27 MHz Performance (In NXP Reference Circuit, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pin = 0.6 W, CW Frequency (MHz) Pout (W) Gps (dB) D (%) 27 330 27.4 80.0 MRF300AN MRF300BN 10 RF Device Data NXP Semiconductors 27 MHz REFERENCE CIRCUIT (MRF300AN) — 2  3 (5.1 cm  7.6 cm) R4 R3 C17 R5 C7 R6 J1 D108224 D1 JP1 C8 C9 L3 R7 C12 C4 J2 C16 C13 C5 B1 C14 L4 J2 C15 L6 C1 C2 L1 C6 R2 L2 L7 C3 L5 R1 C10 C 11 Q1 Rev. 0 aaa--034170 Figure 8. MRF300AN 27 MHz Reference Circuit Component Layout MRF300AN MRF300BN RF Device Data NXP Semiconductors 11 27 MHz REFERENCE CIRCUIT (MRF300AN) Table 12. MRF300AN Reference Circuit Component Designations and Values — 27 MHz Part Description Part Number Manufacturer B1 Long Ferrite Bead 2743021447 Fair-Rite C1, C5, C7, C16 39,000 pF Chip Capacitor 200B393KT50XT ATC C2 120 pF Chip Capacitor GQM2195C2E121GB12D Murata C3 200 pF Chip Capacitor GQM2195C2A201GB12D Murata C4 1 F Chip Capacitor GRM31CR72A105KA01L Murata C6 27 pF Chip Capacitor 100B270JT500XT ATC C8 0.1 F Chip Capacitor GRM32NR72A104KA01B Murata C9 10 F Chip Capacitor GRM32ER61H106KA12L Murata C10 220 pF Chip Capacitor 100B221JT200XT ATC C11 120 pF Chip Capacitor 100B121JT300XT ATC C12 30 pF Chip Capacitor 100B300JT500XT ATC C13, C14 56 pF Chip Capacitor 100B560CT500XT ATC C15 200 pF Chip Capacitor 100B201JT300XT ATC C17 220 F, 63 V Electrolytic Capacitor EEU-FC1J221 Panasonic-ECG D1 8.2 V Zener Diode SMAJ4738A--TP Micro Commercial Components J1 Right Angle Breakaway Headers (2 Pins) 9-146305-0 TE Connectivity J2 Jumper Copper Foil JP1 Shunt (J1) 382811-8 TE Connectivity L1, L2 180 nH Chip Inductor 1008CS-181XJLB Coilcraft L3, L4 110 nH Air Core Inductor 1212VS-111MEB Coilcraft L5 33 nH Air Core Inductor 2014VS-33NMEB Coilcraft L6 155 nH Air Core Inductor 2014VS-151MEB Coilcraft L7 90 nH Air Core Inductor 1212VS-90NME Coilcraft Q1 RF Power LDMOS Transistor MRF300AN NXP R1 51 , 1/4 W Chip Resistor CRCW120651R0FKEA Vishay R2 100 , 1/4 W Chip Resistor CRCW1206100RFKEA Vishay R3 12 k, 1/4 W Chip Resistor CRCW120612K0JNEA Vishay R4 27 k, 1/4 W Chip Resistor CRCW120627K0FKEA Vishay R5, R6 20 k, 1/4 W Chip Resistor CRCW120620K0FKEA Vishay R7 5.0 k Multi--turn Cermet Trimmer Potentiometer 3224W-1-502E Bourns PCB FR4 0.087, r = 4.8, 2 oz. Copper D108224 MTL MRF300AN MRF300BN 12 RF Device Data NXP Semiconductors TYPICAL CHARACTERISTICS — 27 MHz REFERENCE CIRCUIT (MRF300AN) 400 VDD = 50 Vdc, f = 27 MHz, CW 350 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) 400 Pin = 0.6 W 300 250 200 Pin = 0.3 W 150 100 50 0 350 300 250 200 150 100 50 0 0.5 1 2 1.5 3 2.5 0 0 3.5 VDD = 50 Vdc, IDQ = 100 mA, f = 27 MHz, CW 0.1 0.2 VGS, GATE--SOURCE VOLTAGE (VOLTS) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 Pin, INPUT POWER (WATTS) Figure 9. CW Output Power versus Gate--Source Voltage at a Constant Input Power f (MHz) P1dB (W) P3dB (W) 27 310 365 Figure 10. CW Output Power versus Input Power 30 90 VDD = 50 Vdc, IDQ = 100 mA, f = 27 MHz, CW 80 Gps 70 28 60 27 D 26 50 40 25 24 50 100 150 200 250 300 350 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 29 30 400 Pout, OUTPUT POWER (WATTS) Figure 11. Power Gain and Drain Efficiency versus CW Output Power MRF300AN MRF300BN RF Device Data NXP Semiconductors 13 27 MHz REFERENCE CIRCUIT (MRF300AN) f (MHz) Zsource  Zload  27 32.13 + j11.22 4.47 + j0.45 Zsource = Test circuit impedance as measured from gate to ground. Zload 50  = Test circuit impedance as measured from drain to ground. Device Under Test Input Matching Network Zsource Output Matching Network 50  Zload Figure 12. Series Equivalent Source and Load Impedance — 27 MHz MRF300AN MRF300BN 14 RF Device Data NXP Semiconductors 40.68 MHz REFERENCE CIRCUIT (MRF300AN) Table 13. 40.68 MHz Performance (In NXP Reference Circuit, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pin = 0.5 W, CW Frequency (MHz) Pout (W) Gps (dB) D (%) 40.68 330 28.2 79.0 MRF300AN MRF300BN RF Device Data NXP Semiconductors 15 40.68 MHz REFERENCE CIRCUIT (MRF300AN) — 2  3 (5.1 cm  7.6 cm) R6 R5 JP1 R7 R8 D108224 D1 J1 C25 C26 J2 R9 C34 C27 C17 C12 C33 C13 B1 L6 L3 C29 J3 C1 C30 C18 R1 C19 C3 L5 C20 R2 L1 C21 R3 Q1 C22 L4 Rev. 0 Note: Component numbers C2, C4–C11, C14–C16, C23, C24, C28, C31, C32, L2 and R4 are not used. aaa--030512 Figure 13. MRF300AN 40.68 MHz Reference Circuit Component Layout MRF300AN MRF300BN 16 RF Device Data NXP Semiconductors 40.68 MHz REFERENCE CIRCUIT (MRF300AN) Table 14. MRF300AN Reference Circuit Component Designations and Values — 40.68 MHz Part Description Part Number Manufacturer B1 Long Ferrite Bead 2743021447 Fair-Rite C1, C13, C17 22,000 pF Chip Capacitor ATC200B223KT50XT ATC C3 200 pF Chip Capacitor GQM2195C2A201GB12D Murata C12 1 F Chip Capacitor GRM31CR72A105KA01L Murata C18, C19, C20 68 pF Chip Capacitor ATC100B680JT500XT ATC C21 200 pF Chip Capacitor ATC100B201JT300XT ATC C22 220 pF Chip Capacitor ATC100B221JT200XT ATC C25 0.1 F Chip Capacitor GRM32NR72A104KA01B Murata C26 10 F Chip Capacitor GRM32ER61H106KA12L Murata C27 56 pF Chip Capacitor ATC100B560CT500XT ATC C29 75 pF Chip Capacitor ATC100B750JT500XT ATC C30 91 pF Chip Capacitor ATC100B910JT500XT ATC C33 5100 pF Chip Capacitor ATC700B512KT50XT ATC C34 220 F, 63 V Electrolytic Capacitor EEU-FC1J221 Panasonic D1 8.2 V Zener Diode SMAJ4738A--TP Micro Commercial Components J1 Right Angle Breakaway Headers (2 Pins) 9-146305-0 TE Connectivity J2, J3 Jumper Copper Foil JP1 Shunt (J1) 382811-8 TE Connectivity L1 120 nH Chip Inductor 1008CS-121XJLB Coilcraft L3 117 nH Air Core Inductor 1212VS-111MEB Coilcraft L4 33 nH Air Core Inductor 2014VS-33NMEB Coilcraft L5 108 nH Air Core Inductor 2014VS-111MEB Coilcraft L6 155 nH Air Core Inductor 2014VS-151MEB Coilcraft Q1 RF Power LDMOS Transistor MRF300AN NXP R1, R3 0 , 1/4 W Chip Resistor CRCW12060000Z0EA Vishay R2 100 , 1/4 W Chip Resistor CRCW1206100RFKEA Vishay R5 12 k, 1/4 W Chip Resistor CRCW120612K0FKEA Vishay R6 27 k, 1/4 W Chip Resistor CRCW120627K0FKEA Vishay R7, R8 20 k, 1/4 W Chip Resistor CRCW120620K0FKEA Vishay R9 5.0 k Multi--turn Cermet Trimmer Potentiometer 3224W-1-502E Bourns PCB FR4 0.087, r = 4.8, 2 oz. Copper D108224 MTL MRF300AN MRF300BN RF Device Data NXP Semiconductors 17 TYPICAL CHARACTERISTICS — 40.68 MHz REFERENCE CIRCUIT (MRF300AN) 400 VDD = 50 Vdc, f = 40.68 MHz, CW 350 300 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) 400 Pin = 0.5 W 250 Pin = 0.25 W 200 150 100 50 0 VDD = 50 Vdc, IDQ = 100 mA, f = 40.68 MHz, CW 350 300 250 200 150 100 50 0 0.5 1 2 1.5 3 2.5 3.5 0 0 4 0.1 0.2 VGS, GATE--SOURCE VOLTAGE (VOLTS) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Pin, INPUT POWER (WATTS) Figure 14. CW Output Power versus Gate--Source Voltage at a Constant Input Power f (MHz) P1dB (W) P3dB (W) 40.68 250 340 Figure 15. CW Output Power versus Input Power 35 100 VDD = 50 Vdc, IDQ = 100 mA, f = 40.68 MHz, CW 90 80 Gps, POWER GAIN (dB) 33 32 70 Gps 31 60 50 30 29 40 D 28 30 27 20 26 10 25 0 50 100 150 200 250 300 350 D, DRAIN EFFICIENCY (%) 34 0 400 Pout, OUTPUT POWER (WATTS) Figure 16. Power Gain and Drain Efficiency versus CW Output Power MRF300AN MRF300BN 18 RF Device Data NXP Semiconductors 40.68 MHz REFERENCE CIRCUIT (MRF300AN) f (MHz) Zsource () Zload () 40.68 7.83 + j13.51 5.34 + j1.03 Zsource = Test circuit impedance as measured from gate to ground. Zload 50  = Test circuit impedance as measured from drain to ground. Device Under Test Input Matching Network Zsource Output Matching Network 50  Zload Figure 17. Series Equivalent Source and Load Impedance — 40.68 MHz MRF300AN MRF300BN RF Device Data NXP Semiconductors 19 50 MHz REFERENCE CIRCUIT (MRF300AN) Table 15. 50 MHz Performance (In NXP Reference Circuit, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pin = 0.6 W, CW Frequency (MHz) Pout (W) Gps (dB) D (%) 50 320 27.3 73.0 MRF300AN MRF300BN 20 RF Device Data NXP Semiconductors 50 MHz REFERENCE CIRCUIT (MRF300AN) — 2  3 (5.1 cm  7.6 cm) R5 R4 C16 R6 C10 C 11 JP1 R7 J1 D108224 D1 J2 R8 J2 C12 C5 C3 C15 C4 B1 C13 L2 J3 C14 L5 C1 C6 R1 L1 C7 C2 L3 L4 R2 C8 R3 C9 Q1 Rev. 0 aaa--034173 Figure 18. MRF300AN 50 MHz Reference Circuit Component Layout MRF300AN MRF300BN RF Device Data NXP Semiconductors 21 50 MHz REFERENCE CIRCUIT (MRF300AN) Table 16. MRF300AN Reference Circuit Component Designations and Values — 50 MHz Part Description Part Number Manufacturer B1 Long Ferrite Bead 2743021447 Fair-Rite C1, C4, C5, C15 10,000 pF Chip Capacitor 200B103KT50XT ATC C2 180 pF Chip Capacitor GQM2195C2A181GB12D Murata C3 1 F Chip Capacitor GRM31CR72A105KA01L Murata C6 56 pF Chip Capacitor 100B560CT500XT ATC C7, C13 68 pF Chip Capacitor 100B680JT500XT ATC C8, C9 180 pF Chip Capacitor 100B181JT300XT ATC C10 0.1 F Chip Capacitor 12101C104KAT4A AVX C11 10 F Chip Capacitor GRM32ER61H106KA12L Murata C12 82 pF Chip Capacitor 100B820JT500XT ATC C14 110 pF Chip Capacitor 100B111JT300XT ATC C16 220 F, 63 V Electrolytic Capacitor EEU-FC1J221 Panasonic D1 8.2 V Zener Diode SMAJ4738A--TP Micro Commercial Components J1 Right Angle Breakaway Headers (2 Pins) 9-146305-0 TE Connectivity J2, J3 Jumper Copper Foil JP1 Shunt (J1) 382811-8 TE Connectivity L1 82 nH Air Core Inductor 1812SMS-82NJLC Coilcraft L2 110 nH Air Core Inductor 1212VS-111MEB Coilcraft L3 22 nH Air Core Inductor 1212VS-22NME Coilcraft L4 90 nH Air Core Inductor 1212VS-90NME Coilcraft L5 150 nH Air Core Inductor 2014VS-151MEB Coilcraft Q1 RF Power LDMOS Transistor MRF300AN NXP R1, R3 0 , 1/4 W Chip Resistor CRCW12060000Z0EA Vishay R2 100 , 1/4 W Chip Resistor CRCW1206100RFKEA Vishay R4 12 k, 1/4 W Chip Resistor CRCW120612K0FNEA Vishay R5 27 k, 1/4 W Chip Resistor CRCW120627K0FKEA Vishay R6, R7 20 k, 1/4 W Chip Resistor CRCW120620K0FKEA Vishay R8 5.0 k Multi-turn Cermet Trimmer Potentiometer 3224W-1-502E Bourns PCB FR4 0.087, r = 4.8, 2 oz. Copper D108224 MTL MRF300AN MRF300BN 22 RF Device Data NXP Semiconductors TYPICAL CHARACTERISTICS — 50 MHz REFERENCE CIRCUIT (MRF300AN) 400 VDD = 50 Vdc, f = 50 MHz, CW 350 300 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) 400 Pin = 0.6 W 250 200 Pin = 0.3 W 150 100 50 0 VDD = 50 Vdc, IDQ = 100 mA, f = 50 MHz, CW 350 300 250 200 150 100 50 0 0.5 1 1.5 2 2.5 0 0 3.5 3 0.1 0.2 VGS, GATE--SOURCE VOLTAGE (VOLTS) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Pin, INPUT POWER (WATTS) Figure 19. CW Output Power versus Gate--Source Voltage at a Constant Input Power f (MHz) P1dB (W) P3dB (W) 50 260 340 Figure 20. CW Output Power versus Input Power 90 31 VDD = 50 Vdc, IDQ = 100 mA, f = 50 MHz, CW 80 Gps 29 70 60 28 50 27 D 26 40 30 25 24 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 30 0 50 100 150 200 250 300 350 20 400 Pout, OUTPUT POWER (WATTS) Figure 21. Power Gain and Drain Efficiency versus CW Output Power MRF300AN MRF300BN RF Device Data NXP Semiconductors 23 50 MHz REFERENCE CIRCUIT (MRF300AN) f (MHz) Zsource  Zload  50 6.44 + j12.27 5.05 + j1.36 Zsource = Test circuit impedance as measured from gate to ground. Zload 50  = Test circuit impedance as measured from drain to ground. Device Under Test Input Matching Network Zsource Output Matching Network 50  Zload Figure 22. Series Equivalent Source and Load Impedance — 50 MHz MRF300AN MRF300BN 24 RF Device Data NXP Semiconductors 81.36 MHz REFERENCE CIRCUIT (MRF300AN) Table 17. 81.36 MHz Performance (In NXP Reference Circuit, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pin = 1 W, CW Frequency (MHz) Pout (W) Gps (dB) D (%) 81.36 325 25.1 77.5 MRF300AN MRF300BN RF Device Data NXP Semiconductors 25 81.36 MHz REFERENCE CIRCUIT (MRF300AN) — 2  3 (5.1 cm  7.6 cm) R4 JP1 R5 R3 C7 D108224 R6 J1 D1 C8 C9 C17 J2 R7 C12 C16 C4 J2 C13 C5 L5 B1 C14 L3 J3 C15 C1 L1 C2 C6 C3 L4 L6 R2 L2 R1 C10 C 11 Q1 Rev. 0 aaa--034174 Figure 23. MRF300AN 81.36 MHz Reference Circuit Component Layout MRF300AN MRF300BN 26 RF Device Data NXP Semiconductors 81.36 MHz REFERENCE CIRCUIT (MRF300AN) Table 18. MRF300AN Reference Circuit Component Designations and Values — 81.36 MHz Part Description Part Number Manufacturer B1 Long Ferrite Bead 2743021447 Fair-Rite C1, C5, C7, C16 4,700 pF Chip Capacitor 700B472KT50XT ATC C2 120 pF Chip Capacitor GQM2195C2E121GB12D Murata C3 47 pF Chip Capacitor GQM2195C2E470GB12D Murata C4 1 F Chip Capacitor GRM31CR72A105KA01L Murata C6 30 pF Chip Capacitor 100B300JT500XT ATC C8 0.1 F Chip Capacitor GRM32NR72A104KA01B Murata C9 10 F Chip Capacitor GRM32ER61H106KA12L Murata C10 91 pF Chip Capacitor 100B910JT500XT ATC C11 82 pF Chip Capacitor 100B820JT500XT ATC C12 51 pF Chip Capacitor 100B510GT500XT ATC C13 22 pF Chip Capacitor 100B220JT500XT ATC C14 12 pF Chip Capacitor 100B120JT500XT ATC C15 33 pF Chip Capacitor 100B330JT500XT ATC C17 220 F, 63 V Electrolytic Capacitor EEU-FC1J221 Panasonic D1 8.2 V Zener Diode SMAJ4738A--TP Micro Commercial Components J1 Right Angle Breakaway Headers (2 Pins) 9-146305-0 TE Connectivity J2, J3 Jumper Copper Foil JP1 Shunt (J1) 382811-8 TE Connectivity L1 12.3 nH Square Air Core Inductor 0806SQ-12NJL Coilcraft L2 19 nH Square Air Core Inductor 0806SQ-19NJL Coilcraft L3 117 nH Air Core Inductor 1212VS-111MEB Coilcraft L4 22 nH Air Core Inductor 1212VS-22NMEB Coilcraft L5, L6 42 nH Air Core Inductor 1212VS-42NMEB Coilcraft Q1 RF Power LDMOS Transistor MRF300AN NXP R1 0 , 1/4 W Chip Resistor CRCW12060000Z0EA Vishay R2 100 , 1/4 W Chip Resistor CRCW1206100RFKEA Vishay R3 12 k, 1/4 W Chip Resistor CRCW120612K0JNEA Vishay R4 27 k, 1/4 W Chip Resistor CRCW120627K0FKEA Vishay R5, R6 20 k, 1/4 W Chip Resistor CRCW120620K0FKEA Vishay R7 5.0 k Multi--turn Cermet Trimmer Potentiometer 3224W-1-502E Bourns PCB FR4 0.087, r = 4.8, 2 oz. Copper D108224 MTL MRF300AN MRF300BN RF Device Data NXP Semiconductors 27 TYPICAL CHARACTERISTICS — 81.36 MHz REFERENCE CIRCUIT (MRF300AN) 400 VDD = 50 Vdc, f = 81.36 MHz, CW 350 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) 400 300 Pin = 1 W 250 Pin = 0.5 W 200 150 100 50 0 VDD = 50 Vdc, IDQ = 100 mA, f = 81.36 MHz, CW 350 300 250 200 150 100 50 0 0.5 1 2 1.5 3 2.5 0 0 3.5 0.2 0.4 VGS, GATE--SOURCE VOLTAGE (VOLTS) 0.6 1 0.8 1.2 1.4 Pin, INPUT POWER (WATTS) Figure 24. CW Output Power versus Gate--Source Voltage at a Constant Input Power f (MHz) P1dB (W) P3dB (W) 81.36 260 335 Figure 25. CW Output Power versus Input Power 29 90 VDD = 50 Vdc, IDQ = 100 mA, f = 81.36 MHz, CW 80 Gps 27 70 26 60 D 25 50 24 40 23 0 50 100 150 200 250 300 350 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 28 30 400 Pout, OUTPUT POWER (WATTS) Figure 26. Power Gain and Drain Efficiency versus CW Output Power MRF300AN MRF300BN 28 RF Device Data NXP Semiconductors 81.36 MHz REFERENCE CIRCUIT (MRF300AN) f (MHz) Zsource  Zload  81.36 3.86 + j7.90 4.45 + j3.53 Zsource = Test circuit impedance as measured from gate to ground. Zload 50  = Test circuit impedance as measured from drain to ground. Device Under Test Input Matching Network Zsource Output Matching Network 50  Zload Figure 27. Series Equivalent Source and Load Impedance — 81.36 MHz MRF300AN MRF300BN RF Device Data NXP Semiconductors 29 144 MHz REFERENCE CIRCUIT (MRF300AN) Table 19. 144 MHz Performance (In NXP Reference Circuit, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pin = 1.6 W, CW Frequency (MHz) Pout (W) Gps (dB) D (%) 144 320 23.0 73.0 MRF300AN MRF300BN 30 RF Device Data NXP Semiconductors 144 MHz REFERENCE CIRCUIT (MRF300AN) — 2  3 (5.1 cm  7.6 cm) VDS R6 JP1 R7 R5 C10 C 11 C15 D108224 R8 J1 D1 J2 R4 J2 C12 C5 C3 C14 C4 C13 B1 L2 J3 L5 C1 R1 C6 C2 L1 R2 J4 L3 L4 L6 C7 C8 R3 C9 Q1 Rev. 0 aaa--034175 Figure 28. MRF300AN 144 MHz Reference Circuit Component Layout MRF300AN MRF300BN RF Device Data NXP Semiconductors 31 144 MHz REFERENCE CIRCUIT (MRF300AN) Table 20. MRF300AN Reference Circuit Component Designations and Values — 144 MHz Part Description Part Number Manufacturer B1 Long Ferrite Bead 2743021447 Fair-Rite C1, C4, C5, C14 1,000 pF Chip Capacitor 100B102JT50XT ATC C2 120 pF Chip Capacitor GQM2195C2A121GB12D Murata C3 1 F Chip Capacitor GRM31CR72A105KA01L Murata C6, C8 30 pF Chip Capacitor 100B300JT500XT ATC C7 5.6 pF Chip Capacitor 100B5R6CT500XT ATC C9 24 pF Chip Capacitor 100B240JT500XT ATC C10 0.1 F Chip Capacitor GRM32NR72A104KA01B Murata C11 10 F Chip Capacitor GRM32ER61H106KA12L Murata C12 33 pF Chip Capacitor 100B330JT500XT ATC C13 3.9 pF Chip Capacitor 100B3R9CT500XT ATC C15 220 F, 63 V Electrolytic Capacitor EEU-FC1J221 Panasonic D1 8.2 V Zener Diode SMAJ4738A--TP Micro Commercial Components J1 Right Angle Breakaway Headers (2 Pins) 9-146305-0 TE Connectivity J2, J3, J4 Jumper Copper Foil JP1 Shunt (J1) 382811-8 TE Connectivity L1 7.15 nH Air Core Inductor 1606-7JLC Coilcraft L2 110 nH Air Core Inductor 1212VS-111MEB Coilcraft L3 22 nH Air Core Inductor 1212VS-22NME Coilcraft L4, L5 33 nH Air Core Inductor 2014VS-33NME Coilcraft Q1 RF Power LDMOS Transistor MRF300AN NXP R1, R3 0 , 1/4 W Chip Resistor CRCW12060000Z0EA Vishay R2 100 , 1/4 W Chip Resistor CRCW1206100RFKEA Vishay R4 5.0 k Multi-turn Cermet Trimmer Potentiometer 3224W-1-502E Bourns R5 12 k, 1/4 W Chip Resistor CRCW120612K0JNEA Vishay R6 27 k, 1/4 W Chip Resistor CRCW120627K0JNEA Vishay R7, R8 20 k, 1/4 W Chip Resistor CRCW120620K0JNEA Vishay PCB FR4 0.087, r = 4.8, 2 oz. Copper D108224 MTL MRF300AN MRF300BN 32 RF Device Data NXP Semiconductors TYPICAL CHARACTERISTICS — 144 MHz REFERENCE CIRCUIT (MRF300AN) 350 VDD = 50 Vdc, f = 144 MHz, CW 300 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) 350 Pin = 1.6 W 250 200 Pin = 0.8 W 150 100 50 0 0 0.5 1 1.5 2 2.5 250 200 150 100 50 0 0 3.5 3 VDD = 50 Vdc, IDQ = 100 mA, f = 144 MHz, CW 300 0.2 0.4 VGS, GATE--SOURCE VOLTAGE (VOLTS) 0.6 0.8 1 1.2 1.4 1.6 1.8 2 Pin, INPUT POWER (WATTS) Figure 29. CW Output Power versus Gate--Source Voltage at a Constant Input Power f (MHz) P1dB (W) P3dB (W) 144 275 320 Figure 30. CW Output Power versus Input Power 26 80 25 70 24 60 D 23 50 22 21 50 40 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) Gps VDD = 50 Vdc, IDQ = 100 mA, f = 144 MHz, CW 100 150 200 250 300 30 350 Pout, OUTPUT POWER (WATTS) Figure 31. Power Gain and Drain Efficiency versus CW Output Power MRF300AN MRF300BN RF Device Data NXP Semiconductors 33 144 MHz REFERENCE CIRCUIT (MRF300AN) f (MHz) Zsource  Zload  144 1.62 + j6.44 4.32 + j2.06 Zsource = Test circuit impedance as measured from gate to ground. Zload 50  = Test circuit impedance as measured from drain to ground. Device Under Test Input Matching Network Zsource Output Matching Network 50  Zload Figure 32. Series Equivalent Source and Load Impedance — 144 MHz MRF300AN MRF300BN 34 RF Device Data NXP Semiconductors 230 MHz FIXTURE (MRF300AN) — 4  5 (10.2 cm  12.7 cm) C10 C1 C2 C9 C4 C12 C11 C13 B1 C3 cut out area C5 L2 MRF300AN Rev. 0 D110614 R1 C6 C16 C15 L1 C17 C14 C8 C7 aaa--030511 Figure 33. MRF300AN Fixture Component Layout — 230 MHz Table 21. MRF300AN Fixture Component Designations and Values — 230 MHz Part Description Part Number Manufacturer B1 Long Ferrite Bead 2743021447 Fair-Rite C1 47 F, 16 V Tantalum Capacitor T491D476K016AT Kemet C2 2.2 F Chip Capacitor C3225X7R1H225K250AB TDK C3 10 nF Chip Capacitor C1210C103J5GACTU Kemet C4 0.1 F Chip Capacitor GRM319R72A104KA01D Murata C5, C9 1000 pF Chip Capacitor ATC800B102JT50XT ATC C6, C7 18 pF Chip Capacitor ATC100B180JT500XT ATC C8, C14 56 pF Chip Capacitor ATC100B560CT500XT ATC C10 0.1 F Chip Capacitor C1812104K1RACTU Kemet C11 2.2 F Chip Capacitor C3225X7R2A225K230AB TDK C12 2.2 F Chip Capacitor HMK432B7225KM-T Taiyo Yuden C13 220 F, 100 V Electrolytic Capacitor MCGPR100V227M16X26 Multicomp C15 1.2 pF Chip Capacitor ATC100B1R2BT500XT ATC C16 24 pF Chip Capacitor ATC100B240JT500XT ATC C17 470 pF Chip Capacitor ATC800B471JT200XT ATC L1 47 nH Air Core Inductor 1812SMS-47NJLC Coilcraft L2 146 nH Air Core Inductor 1010VS-141NME Coilcraft R1 470  1/4 W Chip Resistor CRCW1206470RFKEA Vishay PCB Rogers AD255C 0.030, r = 2.55, 2 oz. Copper D110614 MTL MRF300AN MRF300BN RF Device Data NXP Semiconductors 35 TYPICAL CHARACTERISTICS — 230 MHz, TC = 25_C FIXTURE (MRF300AN) Pout, OUTPUT POWER (WATTS) PEAK 400 VDD = 50 Vdc, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle 350 300 Pin = 3.0 W 250 200 Pin = 1.5 W 150 100 50 0 0 0.5 1.5 1 2 2.5 3 VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 34. Output Power versus Gate--Source Voltage at a Constant Input Power 53 VDD = 50 Vdc, f = 230 MHz, Pulse Width = 100 sec, 20% Duty Cycle Gps IDQ = 900 mA 22 Gps, POWER GAIN (dB) Pout, OUTPUT POWER (dBm) PEAK 24 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle 55 51 49 47 45 43 41 600 mA 300 mA 20 100 mA 900 mA 18 24 27 30 33 36 14 39 100 mA 10 Pin, INPUT POWER (dBm) PEAK f (MHz) P1dB (W) P3dB (W) 230 334 382 20 300 mA 5 40 600 mA D 39 21 80 60 16 37 18 100 D, DRAIN EFFICIENCY (%) 57 0 500 100 Pout, OUTPUT POWER (WATTS) PEAK Figure 36. Power Gain and Drain Efficiency versus Output Power and Quiescent Current Figure 35. Output Power versus Input Power Gps, POWER GAIN (dB) 22 Gps 21 80 24 70 22 60 20 50 D 19 18 40 30 17 20 16 10 500 50 5 Gps, POWER GAIN (dB) VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle D, DRAIN EFFICIENCY (%) 23 IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle 20 18 50 V 45 V 16 40 V 35 V 14 VDD = 30 V 12 0 50 100 150 200 250 300 350 400 Pout, OUTPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK Figure 37. Power Gain and Drain Efficiency versus Output Power Figure 38. Power Gain versus Output Power and Drain--Source Voltage 450 MRF300AN MRF300BN 36 RF Device Data NXP Semiconductors 230 MHz FIXTURE (MRF300AN) f (MHz) Zsource  Zload  230 1.77 + j1.90 2.50 + j0.78 Zsource = Test circuit impedance as measured from gate to ground. Zload 50  = Test circuit impedance as measured from drain to ground. Device Under Test Input Matching Network Zsource Output Matching Network 50  Zload Figure 39. Series Equivalent Source and Load Impedance — 230 MHz MRF300AN MRF300BN RF Device Data NXP Semiconductors 37 PACKAGE DIMENSIONS MRF300AN MRF300BN 38 RF Device Data NXP Semiconductors MRF300AN MRF300BN RF Device Data NXP Semiconductors 39 MRF300AN MRF300BN 40 RF Device Data NXP Semiconductors PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes  AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins  EB212: Using Data Sheet Impedances for RF LDMOS Devices Software  Electromigration MTTF Calculator  RF High Power Model  .s2p File Development Tools  Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.nxp.com/RF 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 May 2018  Initial release of data sheet 1 Jan. 2019  Typical Performance table: added 13.56, 50 and 144 MHz reference circuits and updated 81.36 MHz data, p. 1  Package photos: added backside photo, p. 1  Table 4, Moisture Sensitivity Level: added footnote “Peak temperature during reflow process must not exceed 225C.” Updated table, p. 2.  Fig. 1, Capacitance versus Drain--Source Voltage: removed note as not applicable to graph, p. 4  Table 8, 40.68 MHz Performance table; Fig. 5, CW Output Power versus Input Power; and Fig. 6, Power Gain and Drain Efficiency versus CW Output Power: corrected bias value to 100 mA to reflect actual measurement used in data sheet, pp. 5, 8  Package Outline Drawing: TO--247--3 package outline updated to Rev. A, pp. 13–15  General updates made to align data sheet to current standard 2 June 2019  Typical Performance table: updated values for 27 MHz, 50 MHz, 81.36 MHz and 144 MHz reference circuits, p. 1  Added 13.56 MHz reference circuit, pp. 5–9  Added 27 MHz reference circuit, pp. 10–14  Added 50 MHz reference circuit, pp. 20–24  Added 81.36 MHz reference circuit, pp. 25–29  Added 144 MHz reference circuit, pp. 30–34 MRF300AN MRF300BN RF Device Data NXP Semiconductors 41 How to Reach Us: Home Page: nxp.com Web Support: nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. NXP does not convey any license under its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/SalesTermsandConditions. NXP and the NXP logo are trademarks of NXP B.V. All other product or service names are the property of their respective owners. E 2018–2019 NXP B.V. MRF300AN MRF300BN Document Number: MRF300AN Rev. 2, 06/2019 42 RF Device Data NXP Semiconductors