Freescale Semiconductor
Technical Data
Document Number: MRF372
Rev. 9, 5/2006
RF Power Field--Effect Transistor
MRF372R3
MRF372R5
Designed for broadband commercial and industrial applications with
frequencies from 470 to 860 MHz. The high gain and broadband performance of
this device make it ideal for large--signal, common source amplifier applications
in 32 volt transmitter equipment.
• Typical Narrowband Two--Tone Performance @ f1 = 857 MHz,
f2 = 863 MHz, 32 Volts
Output Power — 180 Watts PEP
Power Gain — 17 dB
Efficiency — 36%
IMD — --35 dBc
• Typical Broadband Two--Tone Performance @ f1 = 857 MHz,
f2 = 863 MHz, 32 Volts
Output Power — 180 Watts PEP
Power Gain — 14.5 dB
Efficiency — 37%
IMD — --31 dBc
• Capable of Handling 3:1 VSWR @ 32 Vdc, 857 MHz, 90 Watts CW Output
Power
Features
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Excellent Thermal Stability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
470--860 MHz, 180 W, 32 V
LATERAL N--CHANNEL
RF POWER MOSFET
CASE 375G--04, STYLE 1
NI--860C3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +68
Vdc
Gate--Source Voltage
VGS
--0.5, +15
Vdc
Drain Current -- Continuous
ID
17
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
350
2.0
W
W/°C
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value
Unit
RθJC
0.5
°C/W
ARCHIVE INFORMATION
ARCHIVE INFORMATION
N--Channel Enhancement--Mode Lateral MOSFET
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
© Freescale Semiconductor, Inc., 2006, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Class
1 (Minimum)
M3 (Minimum)
MRF372R3 MRF372R5
1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
68
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage (1)
(VDS = 10 V, ID = 200 μA)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage (2)
(VDS = 32 V, ID = 100 mA)
VGS(Q)
2.5
3.5
4.5
Vdc
Drain--Source On--Voltage (1)
(VGS = 10 V, ID = 3 A)
VDS(on)
—
0.28
0.45
Vdc
gfs
—
2.6
—
S
Input Capacitance (Includes Input Matching Capacitance)
(VDS = 32 V, VGS = 0 V, f = 1 MHz)
Ciss
—
260
—
pF
Output Capacitance
(VDS = 32 V, VGS = 0 V, f = 1 MHz)
Coss
—
69
—
pF
Reverse Transfer Capacitance
(VDS = 32 V, VGS = 0 V, f = 1 MHz)
Crss
—
2.5
—
pF
Characteristic
Off Characteristics
(1)
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID =10 μA)
Forward Transconductance
(VDS = 10 V, ID = 3 A)
Dynamic Characteristics (1)
Functional Characteristics, Narrowband Operation (2) (In Freescale MRF372 Narrowband Circuit, 50 ohm system)
Common Source Power Gain
(VDD = 32 V, Pout = 180 W PEP, IDQ = 800 mA,
f1 = 857 MHz, f2 = 863 MHz)
Gps
16
17
—
dB
Drain Efficiency
(VDD = 32 V, Pout = 180 W PEP, IDQ = 800 mA,
f1 = 857 MHz, f2 = 863 MHz)
η
33
36
—
%
IMD
—
--35
--31
dBc
Intermodulation Distortion
(VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 800 mA,
f1 = 857 MHz, f2 = 863 MHz)
Typical Characteristics, Broadband Operation (2) (In Freescale MRF372 Broadband Circuit, 50 ohm system)
Common Source Power Gain
(VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 1000 mA,
f1 = 857 MHz, f2 = 863 MHz)
Gps
—
14.5
—
dB
Drain Efficiency
(VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 1000 mA,
f1 = 857 MHz, f2 = 863 MHz)
η
—
37
—
%
Intermodulation Distortion
(VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 1000 mA,
f1 = 857 MHz, f2 = 863 MHz)
IMD
—
-- 31
—
dBc
ARCHIVE INFORMATION
ARCHIVE INFORMATION
On Characteristics
1. Each side of device measured separately.
2. Measurement made with device in push--pull configuration.
MRF372R3 MRF372R5
2
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
20
Ciss
150
15
100
10
Coss
ARCHIVE INFORMATION
0
0
5
Crss
10
20
30
40
50
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Note: Ciss does not include input matching capacitance.
Figure 1. Capacitance versus Voltage
0
60
ARCHIVE INFORMATION
50
C rss , Capacitance (pF)
C oss , C iss , Capacitance (pF)
200
MRF372R3 MRF372R5
RF Device Data
Freescale Semiconductor
3
GATE
L1
L2
L3
R1
VGG
R3
DRAIN
L4
R4
R5
VDD
+
C3
R2
C5
C8
C7
C12
C10
Table 5. 860 MHz Narrowband DC Bias Networks Component Designations and Values
Designation
Description
C1
2.2 pF Chip Capacitor, ATC
C2
0.5 — 5.0 pF Variable Capacitor, Johansen Gigatrim
C3A, B
22 mF, 22 V Tantalum Chip Capacitors, Kemet #T491D226K22AS
C4A, B, C14A, B
47.0 pF Chip Capacitors, ATC
C5A, B
100 pF Chip Capacitors, ATC
C6
10.0 pF Chip Capacitor, ATC
C7A, B
2.7 pF Chip Capacitors, ATC
C8A, B
1.0 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y105KXBAT
C9
10.0 pF Chip Capacitor, ATC
C10A, B
2.2 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y225KXBAT
C11
5.1 pF Chip Capacitor, ATC
C12A, B
0.01 mF, 100 V Chip Capacitors, Kemet #VJ1210Y103KXBAT
C13
3.9 pF Chip Capacitor, ATC
C15
1.2 pF Chip Capacitor, ATC
L1A, B
130 nH, Coilcraft #132--11SM
L2A, B
#24 AWG, 3 Turns Loose, Fair Rite #2643706001
L3A, B
3.85 nH, Coilcraft #0906--4
L4A, B
5.0 nH, Coilcraft #A02T
R1A, B, R2A, B
R4A, B, R5A, B
180 Ω, 1/4 W Chip Resistors, Vishay Dale (1210)
R3A, B
12 Ω, 1/8 W Chip Resistors, Vishay Dale (1206)
PCB
MRF372 Printed Circuit Board Rev 1a, Rogers RO4350,
Height 30 mils, εr = 3.48
Balun A, B
Vertical 860 MHz Broadband Balun, Printed Circuit Board
Rev 01, Rogers RO3010, Height 50 mils, εr = 10.2
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Figure 2. 860 MHz Narrowband DC Bias Networks
MRF372R3 MRF372R5
4
RF Device Data
Freescale Semiconductor
R2A
L1A
C3A
L2A
C10A
C8A
C5A
L3A
R4A
R5A
L4A
R3A
C4A
C12A
C7A
C14A
C6
C1
C2
C9
C4B
R3B
C3B
L1B
L2B
C5B
R1B
ARCHIVE INFORMATION
L3B
R2B
C8B
R4B
C11
L4B
C13
C15
C14B
R5B
C7B
C12B
C10B
MRF372
Rev 1a
Vertical Balun Mounting Detail
Output 2
(12.5 ohm microstrip)
Motorola Vertical 860 MHz Balun
Rogers RO3010 (50 mil thick)
Output 1
(12.5 ohm microstrip)
PCB Substrate (30 mil thick)
Note:
Trim Balun PCB so that a 35 mil ”tab”
fits into the main PCB “slot” resulting
in Balun solder pads being level with
the PCB substrate solder pads when
fully inserted.
Input
(50 ohm microstrip)
Ground
55 mil slot cut
out to accept Balun
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale
Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the
transition period. These changes will have no impact on form, fit or function of the current product.
ARCHIVE INFORMATION
R1A
Figure 3. 860 MHz Narrowband Component Layout
MRF372R3 MRF372R5
RF Device Data
Freescale Semiconductor
5
TYPICAL TWO--TONE NARROWBAND CHARACTERISTICS
35
Gps
20
--30
15
--35
10
--40
IMR
5
0
--45
--50
100
10
Pout, OUTPUT POWER (WATTS) AVG.
Note:
IMR measured using Delta Marker Method.
Figure 4. COFDM Performance (860 MHz)
40
--15
--20
30
--25
25
--30
η
20
--35
Gps
15
--40
IMR
10
--45
5
10
100
20
18
G ps, POWER GAIN (dB)
VDD = 32 Vdc
IDQ = 1600 mA
6 dB Peak/Avg. Ratio
IMR, INTERMODULATION RATIO (dB)
η, DRAIN EFFICIENCY (%)
G ps , POWER GAIN (dB)
35
--50
IDQ = 1600 mA
1.2 A
16
14
800 mA
400 mA
VDD = 32 Vdc
f1 = 857 MHz
f2 = 863 MHz
12
10
10
Pout, OUTPUT POWER (WATTS) AVG.
Note:
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Power Gain versus Output Power
45
--10
--20
VDD = 32 Vdc
f1 = 857 MHz
f2 = 863 MHz
40
IDQ = 400 mA
--25
--30
800 mA
--35
1.2 A
--40
--45
--50
η , DRAIN EFFICIENCY (%)
D
--15
100
IMR measured using Delta Marker Method.
Figure 5. 8--VSB Performance (860 MHz)
IMD, INTERMODULATION DISTORTION (dBc)
ARCHIVE INFORMATION
--25
η
30
25
20
15
10
1.6 A
10
35
VDD = 32 Vdc
IDQ = 800 mA
f1 = 857 MHz
f2 = 863 MHz
ARCHIVE INFORMATION
25
--20
IMR, INTERMODULATION RATIO (dB)
η, DRAIN EFFICIENCY (%)
G ps , POWER GAIN (dB)
30
--15
VDD = 32 Vdc
IDQ = 1600 mA
2 K Mode 64 QAM
10 dB Peak/Avg. Ratio
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion versus
Output Power
5
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Drain Efficiency versus Output Power
MRF372R3 MRF372R5
6
RF Device Data
Freescale Semiconductor
Zo = 10 Ω
f = 875 MHz
Zload
f = 845 MHz
f = 875 MHz
ARCHIVE INFORMATION
f = 845 MHz
VDD = 32 V, IDQ = 800 mA, Pout = 180 W PEP
f
MHz
Zsource
Ω
Zload
Ω
845
3.99 -- j2.50
5.63 + j0.38
860
3.56 -- j1.98
5.28 + j0.43
875
3.18 -- j1.46
4.94 + j0.56
Harmonics
f
GHz
Zsource
Ω
Zload
Ω
1.69
2.85 + j14.30
1.23 + j9.37
1.72
3.27 + j14.32
1.54 + j9.60
1.75
3.35 + j14.36
1.73 + j9.62
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
ARCHIVE INFORMATION
Zsource
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
--
-Z
source
Output
Matching
Network
+
Z
load
Figure 9. Narrowband Series Equivalent Source and Load Impedance
MRF372R3 MRF372R5
RF Device Data
Freescale Semiconductor
7
GATE
R5
L3
R9A
R9B
VDD
+
C9
C8
+
R7
ARCHIVE INFORMATION
R3
R2
C7
C18
C17
C16
R4T
Figure 10. 470--860 MHz Broadband DC Bias Networks
Table 6. 470--860 MHz Broadband DC Bias Networks Component Designations and Values
Designation
Description
C1
0.7 pF Chip Capacitor, ATC
C2, C13
0.8 — 8.0 pF Variable Capacitors, Johansen Gigatrim
C3A, B, C14A, B, C, D
100 pF Chip Capacitors, ATC
C4
4.7 pF,Chip Capacitor, ATC
C5
7.5 pF Chip Capacitor, ATC
C6
10.0 pF Chip Capacitor, ATC
C7A, B
6.2 pF Chip Capacitors, ATC
C8A, B
22 mF, 22 V Tantalum Chip Capacitors, Kemet #T491D226K22AS
C9A, B
0.1 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y104KXBAT
C10
13 pF Chip Capacitor, ATC
C11
6.8 pF Chip Capacitor, ATC
C12
3.9 pF Chip Capacitor, ATC
C15A, B
3.3 pF Chip Capacitors, ATC
C16A, B
10 mF, 35 V Tantalum Chip Capacitors, Kemet #T491D106K35AS
C17A, B
3.3 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y335KXBAT
C18A, B
0.01 mF Chip Capacitors, ATC
L1A, B
12.55 nH, Coilcraft #1606--10
L2A, B
5.45 nH, Coilcraft #0906--5
L3A, B, C
12.5 nH, Coilcraft #A04T
R1A, B
10 Ω, 1/4 W Chip Resistors, Vishay Dale (1210)
R2A, B
2.2 kΩ, 1/4 W Chip Resistors, Vishay Dale (1210)
R3A, B, R10A, B
390 Ω, 1/8 W Chip Resistors, Vishay Dale (1206)
R4TA, B
520 Ω, Thermistor, Vishay #NTHS—1206J14520R5%
R5A, B
6.2 Ω, 1/4 W Chip Resistors, Vishay Dale (1210)
R6A, B
6.8 kΩ, 1/4 W Chip Resistors, Vishay Dale (1210)
R7
100 kΩ Potentiometer, Bourns
R8
47.3 kΩ, 1/8 W Chip Resistor, Vishay Dale (1206)
R9A, B, C, D
180 Ω, 1/4 W Chip Resistors, Vishay Dale (1210)
PCB
MRF372 Printed Circuit Board Rev 1a, Rogers RO4350,
Height 30 mils, εr = 3.48
Balun A, B
Vertical 660 MHz Broadband Balun, Printed Circuit Board
Rev 01, Rogers RO3010, Height 50 mils, εr = 10.2
ARCHIVE INFORMATION
VGG
L2
R6
DRAIN
MRF372R3 MRF372R5
8
RF Device Data
Freescale Semiconductor
C8A
R8
R4TA
R2A
L2A
C9A
L1A
R1A
R5A
C3A
C4
C5 C6
C18A
R9A
R1B
R9B
L3B
C3B
R5B
L2B
R2B
L1B
R6B
L3A
C10 C11 C12
C2
C1
ARCHIVE INFORMATION
R3A
C7A
C9B
C8B
C7B
R3B
C16A
C17A
R9C
L3C
C15A
C14A
C14B
C13
R9D
R10A
C14C
C14D
C15B
C18B
C17B
R7 R4TB
R10B
C16B
MRF372
Rev. 1a
Vertical Balun Mounting Detail
Output 2
(12.5 ohm microstrip)
Motorola Vertical 660 MHz Balun
Rogers RO3010 (50 mil thick)
Output 1
(12.5 ohm microstrip)
PCB Substrate (30 mil thick)
Note:
Trim Balun PCB so that a 35 mil “tab”
fits into the main PCB “slot” resulting
in Balun solder pads being level with
the PCB substrate solder pads when
fully inserted.
Input
(50 ohm microstrip)
Ground
55 mil slot cut
out to accept Balun
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale
Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the
transition period. These changes will have no impact on form, fit or function of the current product.
ARCHIVE INFORMATION
R6A
Figure 11. 470--860 MHz Broadband Component Layout
MRF372R3 MRF372R5
RF Device Data
Freescale Semiconductor
9
TYPICAL TWO--TONE BROADBAND CHARACTERISTICS
VDD = 32 Vdc
IDQ = 1000 mA
f1 -- f2 = 6 MHz
16
Gps = 660 MHz
14
470 MHz
860 MHz
12
ARCHIVE INFORMATION
10
10
--10
--15
--20
VDD = 32 Vdc
IDQ = 1000 mA
f1 -- f2 = 6 MHz
--25
--30
--40
660 MHz
--45
--50
100
10
Pout, OUTPUT POWER (WATTS) PEP
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 12. Power Gain versus Output Power
Figure 13. Intermodulation Distortion versus
Output Power
45
VDD = 32 Vdc
IDQ = 1000 mA
f1 -- f2 = 6 MHz
ηD , DRAIN EFFICIENCY (%)
40
35
ηD = 860 MHz
30
25
660 MHz
470 MHz
20
15
10
5
10
860 MHz
IMD = 470 MHz
--35
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 14. Drain Efficiency versus Output Power
ARCHIVE INFORMATION
18
IMD, INTERMODULATION DISTORTION (dBc)
G ps, POWER GAIN (dB)
20
MRF372R3 MRF372R5
10
RF Device Data
Freescale Semiconductor
Zo = 10 Ω
Zo = 10 Ω
f = 860 MHz
f = 860 MHz
Zsource
ARCHIVE INFORMATION
f = 470 MHz
f = 470 MHz
VDD = 32 V, IDQ = 1000 mA, Pout = 180 W PEP
f
MHz
Zsource
Ω
Zload
Ω
470
4.46 -- j2.57
4.88 -- j3.50
560
6.40 + j1.06
5.45 -- j0.07
660
7.84 + j0.14
8.13 + j0.73
760
6.67 + j0.46
8.27 -- j1.00
860
6.25 + j0.31
7.52 + j0.02
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
--
-Z
source
ARCHIVE INFORMATION
Zload
Output
Matching
Network
+
Z
load
Figure 15. Broadband Series Equivalent Source and Load Impedance
MRF372R3 MRF372R5
RF Device Data
Freescale Semiconductor
11
ARCHIVE INFORMATION
ARCHIVE INFORMATION
NOTES
MRF372R3 MRF372R5
12
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
ARCHIVE INFORMATION
NOTES
MRF372R3 MRF372R5
RF Device Data
Freescale Semiconductor
13
ARCHIVE INFORMATION
ARCHIVE INFORMATION
NOTES
MRF372R3 MRF372R5
14
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
4
G
ccc
R
T A
M
B
M
Q
bbb
2X
L
M
J
T A
M
M
M
(LID)
2
B
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M--1994.
3. DIMENSION H TO BE MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION
OF 1.140 (28.96) BASED ON 3M SCREW.
(FLANGE)
5
4X
S
(INSULATOR)
bbb
M
T A
K
3
4X
M
B
M
4
B
D
bbb
M
ccc
T A
M
M
B
T A
M
M
B
M
F
N
(LID)
E
M
H
bbb
A
C
(INSULATOR)
M
T A
M
B
M
A
CASE 375G--04
ISSUE G
NI--860C3
T
SEATING
PLANE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
R
S
bbb
ccc
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.180
0.224
0.325
0.335
0.060
0.070
0.004
0.006
1.100 BSC
0.097
0.107
0.2125 BSC
0.135
0.165
0.425 BSC
0.852
0.868
0.851
0.869
0.118
0.138
0.395
0.405
0.394
0.406
0.010 REF
0.015 REF
STYLE 1:
PIN 1.
2.
3.
4.
5.
DRAIN
DRAIN
GATE
GATE
SOURCE
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
4.57
5.69
8.26
8.51
1.52
1.78
0.10
0.15
27.94 BSC
2.46
2.72
5.397 BSC
3.43
4.19
10.8 BSC
21.64
22.05
21.62
22.07
3.00
3.30
10.03
10.29
10.01
10.31
0.25 REF
0.38 REF
ARCHIVE INFORMATION
1
ARCHIVE INFORMATION
B
MRF372R3 MRF372R5
RF Device Data
Freescale Semiconductor
15
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