MRF377HR3

Freescale Semiconductor Technical Data RF Power Field--Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET MRF377HR3 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large--signal, common source amplifier applications in 32 volt digital television transmitter equipment. • Typical Broadband DVBT OFDM Performance @ 470--860 MHz, 32 Volts, IDQ = 2000 mA, 8K Mode, 64 QAM Output Power — 45 Watts Avg. Power Gain ≥ 16.7 dB Drain Efficiency ≥ 21% ACPR ≤ --58 dBc • Typical Broadband ATSC 8VSB Performance @ 470--860 MHz, 32 Volts, IDQ = 2000 mA Output Power — 80 Watts Avg. Power Gain ≥ 16.5 dB Drain Efficiency ≥ 27.5% IMD ≥ --31.3 dBc • Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts CW Output Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Device Designed for Push--Pull Operation Only • Integrated ESD Protection • Excellent Thermal Stability • Lower Thermal Resistance Package • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 470 -- 860 MHz, 45 W AVG., 32 V LATERAL N--CHANNEL RF POWER MOSFET CASE 375G--04, STYLE 1 NI--860C3 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS -- 0.5, +65 Vdc Gate--Source Voltage VGS -- 0.5, +15 Vdc Drain Current -- Continuous ID 17 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 648 3.7 W W/°C Storage Temperature Range Tstg -- 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C CW 235 1.38 W W/°C Symbol Value (1,2) CW Operation @ TC = 25°C Derate above 25°C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81°C, 105 W CW Case Temperature 77°C, 45 W CW RθJC 0.27 0.29 Unit °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2006, 2009. All rights reserved. RF Device Data Freescale Semiconductor LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Document Number: MRF377H Rev. 2, 3/2009 MRF377HR3 1 Table 3. ESD Protection Characteristics Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) Charge Device Model 7 (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (4) (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μA) VGS(th) — 2.8 — Vdc Gate Quiescent Voltage (3) (VDS = 32 Vdc, ID = 2000 mAdc) VGS(Q) 2.5 3.5 4.5 Vdc Drain--Source On--Voltage (1) (VGS = 10 Vdc, ID = 3 A) VDS(on) — 0.27 — Vdc Crss — 3.2 — pF Characteristic Off Characteristics (1) LIFETIME BUY Drain--Source Breakdown Voltage (4) (VGS = 0 Vdc, ID =10 μA) On Characteristics Dynamic Characteristics (1,2) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Functional Tests (3) (In DVBT OFDM Single--Channel, Narrowband Fixture, 50 ohm system) Common Source Power Gain (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA, f = 860 MHz) Gps 16.5 18.2 — dB Drain Efficiency (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA, f = 860 MHz) ηD 21 22.9 — % Adjacent Channel Power Ratio (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA, f = 860 MHz) ACPR — --59.2 --57 dBc Typical Performances (3) (In DVBT OFDM Single--Channel, Broadband Fixture, 50 ohm system) Common Source Power Gain (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz 1. 2. 3. 4. Each side of device measured separately. Part is internally matched both on input and output. Measurement made with device in push--pull configuration. Drains are tied together internally as this is a total device value. Gps dB — — — — — 17.6 17.6 17.4 17.4 16.8 — — — — — LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Test Conditions (continued) MRF377HR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Symbol ηD Adjacent Channel Power Ratio (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz ACPR Min Typ Max Unit % — — — — — 23.5 25.8 23.0 22.7 21.3 — — — — — dBc — — — — — --59.3 --59.3 --58.7 --58.7 --58.1 — — — — — Typical Performances (1) (In ATSC 8VSB Single--Channel, Broadband Fixture, 50 ohm system) Gps Drain Efficiency (VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz ηD Intermodulation Distortion (VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz IMD LIFETIME BUY Common Source Power Gain (VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz 1. Measurement made with device in push--pull configuration. dB — — — — — 17.5 17.5 17.2 17.2 16.6 — — — — — % — — — — — 31.0 34.3 30.1 29.6 27.8 — — — — — dBc — — — — — 31.7 32.7 32.9 34.2 35.4 — — — — — LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Characteristic Drain Efficiency (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz MRF377HR3 RF Device Data Freescale Semiconductor 3 Table 5. 845--875 MHz Narrowband Test Circuit Component Designations and Values Description Part Number Manufacturer 2508051107Y0 Fair--Rite Balun 1, Balun 2 0.8--1GHz Xinger Balun 3A412 Anaran C1 33 pF Chip Capacitor (0805) 08055J330JBS AVX C2 2.7 pF Chip Capacitor (0603) 06035J2R7BBS AVX C3 12 pF Chip Capacitor (0805) 08051J120GBS AVX C4, C5 6.8 pF Chip Capacitors (0805) 08051J6R8BBS AVX C6 2.7 pF Chip Capacitor (0805) 0805J2R7BBS AVX C7, C8, C9, C10 3.3 pF Chip Capacitors (0805) 08051J3R3BBS AVX C11, C12 2.2 μF, 50 V Chip Capacitors C1825C225J5RAC Kemet C13, C14, C15, C16 0.01 μF, 100 V Chip Capacitors C1825C103J1GAC Kemet C17, C18 0.56 μF, 50 V Chip Capacitors C1825C564J5RAC Kemet C19, C20 10 μF, 50 V Tantalum Chip Capacitors T491D106K050AT Kemet C21, C22, C23, C24 47 μF, 16 V Tantalum Chip Capacitors T491D476K016AT Kemet C25, C26 470 μF, 63 V Electrolytic Capacitors EMVY630GTR471MMH0S Nippon Chemi--Con L1 12 nH Inductor (0603) 0603HC--12NXJB CoilCraft L2 7.15 nH Inductor 1606--7 CoilCraft L3, L4 10 nH Inductors (0603) 0603HC--10NXJB CoilCraft R1, R2 24 Ω, 1/4 W, Chip Resistors CRCW120624R0FKEA Vishay LIFETIME BUY Ferrite Beads, Surface Mount, 11 Ω (0805) MRF377 Drain MRF377 Gate C19 C11 C22 VDD C9 C21 Balun 1 C26 L3 C14 C15 B1 WB1 R1 C2 L1 C18 Balun 2 WB3 VGG C3 C4 L2 C5 C6 C7 R2 C13 C24 VGG C23 WB4 WB2 C1 B2 C8 C16 C17 L4 C25 C10 VDD C12 C20 DS1152--A Rev 0 DS1152--B Rev 0 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 1. 845--875 MHz Narrowband Test Circuit Component Layout LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Part B1, B2 MRF377HR3 4 RF Device Data Freescale Semiconductor TYPICAL NARROWBAND CHARACTERISTICS Gps 18 17.5 17 VDD = 32 Vdc IDQ = 2000 mA f1 = 859.95 MHz, f2 = 860.05 MHz 16.5 16 10 --30 IDQ = 1400 mA --40 1600 mA --50 1800 mA VDD = 32 Vdc f1 = 859.95 MHz, f2 = 860.05 MHz --70 100 10 100 Figure 3. Third Order Intermodulation Distortion versus Output Power --20 45 VDD = 32 Vdc IDQ = 2000 mA f1 = 859.95 MHz, f2 = 860.05 MHz 40 --30 ηD, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) LIFETIME BUY Pout, OUTPUT POWER (WATTS) PEP Figure 2. Two--Tone Power Gain versus Output Power 3rd Order --50 5th Order --60 7th Order VDD = 32 Vdc IDQ = 2000 mA f1 = 859.95 MHz, f2 = 860.05 MHz --70 --80 10 2200 mA --60 Pout, OUTPUT POWER (WATTS) PEP --40 2000 mA 35 ηD 30 25 20 15 10 5 100 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 4. Intermodulation Distortion Products versus Output Power Figure 5. Two--Tone Drain Efficiency versus Output Power 19 60 Gps G ps , POWER GAIN (dB) 18 40 17 20 ηD 16 VDD = 32 Vdc IDQ = 2000 mA f1 = 859.95 MHz, f2 = 860.05 MHz 15 14 0 --20 --40 IMD 13 --60 12 --80 10 100 Pout, OUTPUT POWER (WATTS) PEP ηD, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) G ps , POWER GAIN (dB) 18.5 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 --20 IMD, INTERMODULATION DISTORTION (dBc) 19 Figure 6. Power Gain, Efficiency and IMD versus Output Power MRF377HR3 RF Device Data Freescale Semiconductor 5 Zload f = 875 MHz Zsource f = 875 MHz LIFETIME BUY f = 845 MHz Zo = 10 Ω VDD = 32 V, IDQ = 2000 mA, Pout = 45 W Avg., DVBT OFDM f MHz Zsource Ω Zload Ω 845 4.66 -- j5.90 8.59 -- j4.22 860 4.38 -- j5.64 9.36 -- j4.95 875 3.93 -- j5.33 9.39 -- j6.06 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test -- -Z source Output Matching Network + Z load Figure 7. 845--875 MHz Narrowband Series Equivalent Source and Load Impedance LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 f = 845 MHz MRF377HR3 6 RF Device Data Freescale Semiconductor Table 6. 470—860 MHz Broadband Test Circuit Component Designations and Values Description Balun 1, Balun 2 Rogers 3.006, εr = 6.06, 1 oz Cu C1 C2, C5 Part Number Manufacturer 2506033007Y0 Fair--Rite 12 pF Chip Capacitor (0603) 06035J120GBS AVX 12 pF Chip Capacitors (0805) 08051J120GBS AVX C3 3.9 pF Chip Capacitor (0805) 08051J3R9BBS AVX C4, C7, C12, C15, C17 8.2 pF Chip Capacitors (0805) 08051J8R2BBS AVX C6 3.3 pF Chip Capacitor (0805) 08051J3R3BBS AVX C8 0.4--2.5 pF Variable Capacitor 27283PC Gigatronics C9, C10 3.3 pF Chip Capacitors (0603) 06035J3R3BBS AVX C11, C14 10 pF Chip Capacitors (0805) 08051J100GBS AVX C13 4.7 pF Chip Capacitor (0805) 08051J4R7BBS AVX C16 2.2 pF Chip Capacitor (0603) 06035J2R2BBS AVX C18 2.2 pF Chip Capacitor (0805) 08051J2R2BBS AVX C19, C20, C21, C22 47 μF, 16 V Tantalum Chip Capacitors T491D476K016AT Kemet C23, C26 2.2 μF, 50 V Ceramic Chip Capacitors C1825C225J5RAC Kemet C24, C25, C27, C29 0.01 μF, 100 V Ceramic Chip Capacitors C1825C103J1GAC Kemet C28, C30 0.56 μF, 50 V Ceramic Chip Capacitors C1825C564J5GAC Kemet C31, C32 10 μF, 50 V Chip Capacitors T491D106K010AT Kemet C33, C34 470 μF, 63 V Electrolytic Capacitors EMVY630GTR471MMH0S United Chemi--Con L1, L2 15 nH Inductors (0603) L0603150GGW003 AVX L3, L4 12 nH Inductors (0603) 0603HC--12NHJBU CoilCraft L5, L6 8 nH Coil Inductors A03T--5 CoilCraft L7 22 nH Coil Inductor B07T--5 CoilCraft L8 18.5 nH Coil Inductor A05T--5 CoilCraft R1, R2 12.1 Ω, 1/16 W, Chip Resistors CRCW060312R1FKEA Vishay LIFETIME BUY Ferrite Beads, Surface Mount, 30 Ω (0603) LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Part B1, B2 MRF377HR3 RF Device Data Freescale Semiconductor 7 C20 VGG VDD C19 C32 L3 R1 C9 L1 C23 C24 L5 C27 C28 B1 C8 C3 C6 L8 C5 C7 C17 C4 C2 C11 C13 C1 C14 C16 L7 C18 C15 C12 B2 LIFETIME BUY C26 C25 L2 L6 C29 C30 L4 R2 C10 C31 Balun 1 Balun 2 C22 VGG VDD C21 DS1047 Rev 4 DS1047 Rev 4 C33 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Multilayer Balun Mounting Detail Topside View Upside Down View Figure 8. 470--860 MHz Broadband Test Circuit Component Layout LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 C34 MRF377HR3 8 RF Device Data Freescale Semiconductor TYPICAL DVBT OFDM BROADBAND CHARACTERISTICS 19 G ps , POWER GAIN (dB) 17 35 Gps 30 16 15 14 13 12 25 ηD 20 VDD = 32 Vdc, Pout = 45 W (Avg.), IDQ = 2000 mA 8K Mode DVBT OFDM 64 QAM Data Carrier Modulation 5 Symbols --40 --45 --50 11 --55 10 --60 ACPR 9 420 480 540 600 660 720 780 --65 900 840 Figure 9. Single--Channel DVBT OFDM Broadband Performance 19 30 VDD = 32 Vdc, IDQ = 2000 mA 8K Mode OFDM 64 QAM Data Carrier Modulation 5 Symbols 470 MHz 18 560 MHz 660 MHz 17.5 760 MHz 860 MHz 17 VDD = 32 Vdc IDQ = 2000 mA 8K Mode OFDM 64 QAM Data Carrier Modulation 5 Symbols 25 ηD, DRAIN EFFICIENCY (%) 18.5 G ps , POWER GAIN (dBc) 16.5 20 660 MHz 860 MHz 760 MHz 10 5 0 2 4 6 8 10 30 10 50 Figure 10. Single--Channel DVBT OFDM Broadband Performance Power Gain versus Output Power Figure 11. Single--Channel DVBT OFDM Broadband Performance Drain Efficiency versus Output Power --56 --20 --60 --62 --64 --66 --68 7.61 MHz --30 --58 100 Pout, OUTPUT POWER (WATTS) AVG. Pout, OUTPUT POWER (WATTS) AVG. ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 470 MHz 560 MHz 15 16 470 MHz --40 660 MHz --50 760 MHz 860 MHz --60 (dB) LIFETIME BUY f, FREQUENCY (MHz) VDD = 32 Vdc IDQ = 2000 mA 8K Mode DVBT OFDM 64 QAM Data Carrier Modulation 5 Symbols --70 --80 560 MHz --90 4 kHz BW --100 4 kHz BW --110 10 100 Pout, OUTPUT POWER (WATTS) AVG. Figure 12. Single--Channel DVBT OFDM Broadband Performance Adjacent Channel Power Ratio versus Output Power --5 --4 --3 --2 --1 0 1 2 3 4 f, FREQUENCY (MHz) 5 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 18 ACPR, ADJACENT CHANNEL POWER RATIO ηD, DRAIN EFFICIENCY (%) 40 Figure 13. 8K Mode DVBT OFDM Spectrum MRF377HR3 RF Device Data Freescale Semiconductor 9 TYPICAL ATSC 8VSB BROADBAND CHARACTERISTICS 40 Gps G ps , POWER GAIN (dB) 16 15 14 35 30 ηD 25 VDD = 32 Vdc Pout = 80 W (Avg.) IDQ = 2000 mA ATSC 8VSB 13 12 11 --15 --20 --25 10 --30 9 ACPR 8 420 480 --35 540 600 660 720 780 840 --45 900 Figure 14. Single--Channel ATSC 8VSB Broadband Performance 19 18 40 VDD = 32 Vdc IDQ = 2000 mA ATSC 8VSB 470 MHz 560 MHz 660 MHz 17.5 860 MHz VDD = 32 Vdc IDQ = 2000 mA ATSC 8VSB 35 ηD, DRAIN EFFICIENCY (%) 18.5 760 MHz 17 16.5 30 470 MHz 560 MHz 660 MHz 25 760 MHz 20 860 MHz 15 10 5 16 0 10 100 10 100 Pout, OUTPUT POWER (WATTS) AVG. Pout, OUTPUT POWER (WATTS) AVG. Figure 15. Single--Channel ATSC 8VSB Broadband Performance Power Gain versus Output Power Figure 16. Single--Channel ATSC 8VSB Broadband Performance Drain Efficiency versus Output Power --25 --10 --30 860 MHz --35 --40 Reference Point --20 --30 --40 --50 470 MHz (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) G ps , POWER GAIN (dBc) LIFETIME BUY f, FREQUENCY (MHz) 660 MHz 760 MHz IMRU --60 --70 560 MHz --80 VDD = 32 Vdc IDQ = 2000 mA ATSC 8VSB --45 IMRL --90 3.25 MHz Offset --100 --50 10 3.25 MHz Offset 100 --4.0 --3.2 --2.4 --1.6 --0.8 0 0.8 1.6 2.4 Pout, OUTPUT POWER (WATTS) AVG. f, FREQUENCY (MHz) Figure 17. Single--Channel ATSC 8VSB Broadband Performance Adjacent Channel Power Ratio versus Output Power Figure 18. ATSC 8VSB Spectrum 3.2 4.0 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 17 45 ACPR, ADJACENT CHANNEL POWER RATIO ηD, DRAIN EFFICIENCY (%) 18 MRF377HR3 10 RF Device Data Freescale Semiconductor f = 470 MHz Zload Zsource Zo = 10 Ω Zo = 10 Ω LIFETIME BUY f = 860 MHz Optimized for VDD = 32 V, IDQ = 2000 mA, Pout = 45 W Avg., DVBT OFDM f MHz Zsource Ω Zload Ω 470 5.79 -- j2.40 6.21 -- j1.69 560 6.63 -- j2.63 5.66 -- j1.12 660 6.57 -- j4.03 6.76 -- j1.00 760 6.67 -- j4.55 6.57 -- j1.91 860 5.34 -- j6.28 7.37 -- j5.45 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test -- -Z source Output Matching Network + Z load f = 860 MHz LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 f = 470 MHz Figure 19. 470—860 MHz Broadband Series Equivalent Source and Load Impedance MRF377HR3 RF Device Data Freescale Semiconductor 11 PACKAGE DIMENSIONS 4 G ccc R T A M B M Q bbb 2X L M J T A M M B M (LID) 2 1 B NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M--1994. 3. DIMENSION H TO BE MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.140 (28.96) BASED ON 3M SCREW. (FLANGE) 5 4X S (INSULATOR) bbb M T A K 3 4X M B M 4 B D bbb M ccc T A M M B T A M M B M F N (LID) E M H bbb A C (INSULATOR) M T A M B M A T SEATING PLANE DIM A B C D E F G H J K L M N Q R S bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.180 0.224 0.325 0.335 0.060 0.070 0.004 0.006 1.100 BSC 0.097 0.107 0.2125 BSC 0.135 0.165 0.425 BSC 0.852 0.868 0.851 0.869 0.118 0.138 0.395 0.405 0.394 0.406 0.010 REF 0.015 REF STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 4.57 5.69 8.26 8.51 1.52 1.78 0.10 0.15 27.94 BSC 2.46 2.72 5.397 BSC 3.43 4.19 10.8 BSC 21.64 22.05 21.62 22.07 3.00 3.30 10.03 10.29 10.01 10.31 0.25 REF 0.38 REF DRAIN DRAIN GATE GATE SOURCE CASE 375G--04 ISSUE G NI--860C3 MRF377HR3 12 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Date 2 Mar. 2009 LIFETIME BUY Revision Description • Data sheet revised to reflect part status change, removing MRF377HR5. Refer to PCN13170. (See Rev. 1 data sheet for MRF377HR5.) • Updated Part Numbers in Tables 5 and 6, Component Designations and Values, to RoHS compliant part numbers, p. 4, 7 • Added Revision History, p. 13 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers MRF377HR3 RF Device Data Freescale Semiconductor 13 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006, 2009. All rights reserved. MRF377HR3 Document Number: MRF377H Rev. 2, 3/2009 14 RF Device Data Freescale Semiconductor