Freescale Semiconductor
Technical Data
Document Number: MRF5P20180HR6
Rev. 2, 10/2008
RF Power Field Effect Transistor
MRF5P20180HR6
Designed for W--CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN--PCS/cellular radio and WLL applications.
• Typical 2--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1600 mA,
Pout = 38 Watts Avg., f = 1977.5 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
Drain Efficiency — 26%
IM3 @ 10 MHz Offset — --37.5 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — --41 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
1930--1990 MHz, 38 W AVG., 28 V
2 x W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFET
CASE 375D--05, STYLE 1
NI--1230
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
530
3.0
W
W/°C
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
CW
185
1.2
W
W/°C
Symbol
Value (1,2)
Unit
CW Operation @ TC = 25°C
Derate above 25°C
ARCHIVE INFORMATION
ARCHIVE INFORMATION
N--Channel Enhancement--Mode Lateral MOSFET
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 77°C, 120 W CW
Case Temperature 72°C, 38 W CW
RθJC
0.33
0.35
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5P20180HR6
1
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage (1)
(VDS = 10 Vdc, ID = 200 μAdc)
VGS(th)
2.5
2.7
3.5
Vdc
Gate Quiescent Voltage (3)
(VDS = 28 Vdc, ID = 1600 mAdc)
VGS(Q)
—
3.6
—
Vdc
Drain--Source On--Voltage (1)
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.26
0.3
Vdc
Forward Transconductance (1)
(VDS = 10 Vdc, ID = 2 Adc)
gfs
—
5
—
S
Crss
—
1.7
—
pF
Characteristic
On Characteristics
Dynamic Characteristics (1,2)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, Pout = 38 W Avg., f1 = 1977.5 MHz,
f2 = 1987.5 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz
Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
12.5
14
—
dB
Drain Efficiency
ηD
23
26
—
%
Intermodulation Distortion
IM3
—
--37.5
--35
dBc
ACPR
—
--41
--38
dBc
IRL
—
--16
--9
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push--pull configuration.
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Off Characteristics
(1)
MRF5P20180HR6
2
RF Device Data
Freescale Semiconductor
R1
+
C14
R2
Z17
C10
Z1
RF
INPUT
Z3
Z4
Z2
C1
Z15
Z9
C4
Z10
ARCHIVE INFORMATION
VSUPPLY
C20
Z24
Z25
RF
OUTPUT
Z12
Z14
Z16
Z20
Z22
C5
R3
R4
+
C15
Z18
C11
C9
C7
Z1
Z2
Z3
Z4
Z5, Z24
Z6, Z23
Z7, Z8
Z9, Z10
+
Z23
DUT
Z8
+
C17
Z21
Z11
C3
VBIAS
Z19
C2
Z5
Z6
+
C16
C8
Z13
Z7
C12
0.081″ x 1.126″ Microstrip
0.079″ x 0.138″ Microstrip
0.081″ x 0.091″ Microstrip
0.081″ x 0.117″ Microstrip
0.134″ x 0.874″ Microstrip
0.081″ x 2.269″ Microstrip
0.081″ x 0.118″ Microstrip
0.081″ x 0.079″ Microstrip
Z11, Z12
Z13, Z14
Z15, Z16
Z17, Z18
Z19, Z20
Z21, Z22
Z25
PCB
C13
+
C18
+
C19
+
C21
0.341″ x 0.945″ Microstrip
0.035″ x 0.913″ Microstrip
0.581″ x 0.823″ Microstrip
0.059″ x 1.057″ Microstrip
0.081″ x 0.046″ Microstrip
0.081″ x 0.126″ Microstrip
0.081″ x 0.793″ Microstrip
Taconic TLX8--0300, 0.030″, εr = 2.55
Figure 1. MRF5P20180HR6 Test Circuit Schematic
Table 5. MRF5P20180HR6 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
1.8 pF 100B Chip Capacitor
ATC100B1R8BT500XT
ATC
C2, C3, C4, C5, C6, C7
10 pF 100B Chip Capacitors
ATC100B100GT500XT
ATC
C8, C9
6.8 pF 100B Chip Capacitors
ATC100B6R8CT500XT
ATC
C10, C11, C12, C13
10 nF 200B Chip Capacitors
ATC200B103MT500XT
ATC
C14, C15, C16, C17, C18, C19
22 μF, 35 V Tantalum Capacitors
TAJE226M035S
AVX
C20, C21
220 μF, 63 V Electrolytic Capacitors
EMVY630GTR221MLH0S
Nippon Chemi--Con
R1, R2, R3, R4
10 kΩ, 1/4 W Chip Resistors
CRCW12061002FKEA
Vishay
VSUPPLY
ARCHIVE INFORMATION
VBIAS
C6
MRF5P20180HR6
RF Device Data
Freescale Semiconductor
3
MRF5P20180
VGG
R1
Rev 1
R2
C14
C12 C16 C17
C10
VDD
C6
C8
C20
C4
C2
STRAP
C5
C21
C9
VGG
R3
R4
C15
C11
C7
C13 C18 C19
VDD
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
Figure 2. MRF5P20180HR6 Test Circuit Component Layout
ARCHIVE INFORMATION
ARCHIVE INFORMATION
C3
CUT OUT AREA
C1
MRF5P20180HR6
4
RF Device Data
Freescale Semiconductor
G ps , POWER GAIN (dB)
12
11
10
9
IRL
VDD = 28 Vdc, Pout = 38 W (Avg.), IDQ = 1600 mA
30
25
2--Carrier W--CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
20
--20
--25
8
--30
7
--35
6
IM3
--40
ACPR
5
--45
1840 1860 1880 1900 1920 1940 1960 1980 2000 2020 2040 2060 2080
--10
--15
--20
--25
--30
--35
f, FREQUENCY (MHz)
Figure 3. 2--Carrier W--CDMA Broadband Performance
@ Pout = 38 Watts Avg.
16
--20
15.5
IDQ = 2400 mA
15
2000 mA
14.5
1600 mA
14
1200 mA
13.5
13
800 mA
12.5
VDD = 28 Vdc
f1 = 1955 MHz, f2 = 1965 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
12
11.5
11
10
1
100
--30
--45
--50
1000
1
10
1000
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation
Distortion versus Output Power
7th Order
--60
0.1
1200 mA
Pout, OUTPUT POWER (WATTS) PEP
5th Order
--55
1600 mA
Figure 4. Two--Tone Power Gain versus
Output Power
--35
--50
2000 mA
--55
--60
3rd Order
--45
2400 mA
--40
--25
--40
IDQ = 800 mA
--35
--20
--30
VDD = 28 Vdc
f1 = 1955 MHz, f2 = 1965 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
--25
Pout , OUTPUT POWER (dBm)
IMD, INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
G ps , POWER GAIN (dB)
ARCHIVE INFORMATION
ηD
VDD = 28 Vdc, Pout = 180 W (PEP), IDQ = 1600 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
1
10
100
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
Ideal
P3dB = 54 dBm (251 W)
ARCHIVE INFORMATION
13
35
Gps
IRL, INPUT RETURN LOSS (dB)
14
40
IM3 (dBc), ACPR (dBc)
15
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
P1dB = 53.5 dBm (224 W)
Actual
VDD = 28 Vdc, IDQ = 1600 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 1960 MHz
30
32
34
36
38
40
42
44
TWO--TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
46
MRF5P20180HR6
RF Device Data
Freescale Semiconductor
5
25
ηD
--25
--30
IM3
20
--35
ACPR
15
--40
Gps
10
--45
5
--50
0
--55
1
100
10
IM3 (dBc), ACPR (dBc)
30
1010
--20
VDD = 28 Vdc, IDQ = 1600 mA
f1 = 1955 MHz, f2 = 1965 MHz
2 x W--CDMA
10 MHz @ 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
MTTF FACTOR (HOURS x AMPS2)
35
109
108
107
100
120
140
160
180
200
220
TJ, JUNCTION TEMPERATURE (°C)
Pout, OUTPUT POWER (WATTS, Avg.) W--CDMA
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 8. 2--Carrier W--CDMA ACPR, IM3, Power
Gain and Drain Efficiency versus Output Power
Figure 9. MTTF Factor versus Junction Temperature
W--CDMA TEST SIGNAL
--20
100
10
--40
--50
1
--60
(dB)
PROBABILITY (%)
3.84 MHz
Channel BW
--30
0.1
--80
W--CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.01
0.001
--90
--100
--110
0.0001
0
2
4
6
--70
8
10
PEAK--TO--AVERAGE (dB)
Figure 10. CCDF W--CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single Carrier Test Signal
--120
--25
--ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
--IM3 in
3.84 MHz BW
--20
--15
--10
--5
0
5
10
+IM3 in
3.84 MHz BW
15
20
f, FREQUENCY (MHz)
Figure 11. 2-Carrier W-CDMA Spectrum
25
ARCHIVE INFORMATION
ARCHIVE INFORMATION
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS
MRF5P20180HR6
6
RF Device Data
Freescale Semiconductor
f = 1930 MHz
Zload
ARCHIVE INFORMATION
f = 1990 MHz
f = 1990 MHz
Zsource
f = 1930 MHz
VDD = 28 V, IDQ = 1600 mA, Pout = 38 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
1930
6.54 -- j16.04
4.06 -- j5.56
1960
9.70 -- j17.92
3.70 -- j5.48
1990
13.88 -- j20.46
3.64 -- j5.76
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
--
-Z
source
ARCHIVE INFORMATION
Zo = 25 Ω
Output
Matching
Network
+
Z
load
Figure 12. Series Equivalent Source and Load Impedance
MRF5P20180HR6
RF Device Data
Freescale Semiconductor
7
PACKAGE DIMENSIONS
bbb
G 4
1
2
3
4
T A
M
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.52 (38.61) BASED ON M3 SCREW.
B
D
aaa
M
T A
M
B
M
ccc
ccc
ARCHIVE INFORMATION
B
M
(FLANGE)
4X
K
M
B
L
4X
Q
M
T A
M
B
M
M
T A
M
B
M
R
(LID)
N
(LID)
F
H
C
E
PIN 5
M
(INSULATOR)
bbb
M
T A
M
B
S
T
SEATING
PLANE
(INSULATOR)
bbb
M
T A
M
CASE 375D--05
ISSUE E
NI--1230
M
B
M
DIM
A
B
C
D
E
F
G
H
K
L
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
1.615
1.625
0.395
0.405
0.150
0.200
0.455
0.465
0.062
0.066
0.004
0.007
1.400 BSC
0.082
0.090
0.117
0.137
0.540 BSC
1.219
1.241
1.218
1.242
0.120
0.130
0.355
0.365
0.365
0.375
0.013 REF
0.010 REF
0.020 REF
STYLE 1:
PIN 1.
2.
3.
4.
5.
DRAIN
DRAIN
GATE
GATE
SOURCE
MILLIMETERS
MIN
MAX
41.02
41.28
10.03
10.29
3.81
5.08
11.56
11.81
1.57
1.68
0.10
0.18
35.56 BSC
2.08
2.29
2.97
3.48
13.72 BSC
30.96
31.52
30.94
31.55
3.05
3.30
9.01
9.27
9.27
9.53
0.33 REF
0.25 REF
0.51 REF
ARCHIVE INFORMATION
2X
A
A
MRF5P20180HR6
8
RF Device Data
Freescale Semiconductor
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
2
Oct. 2008
Description
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN12779, p. 1, 2
• Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part
numbers, p. 3
• Added Revision History, p. 9
ARCHIVE INFORMATION
ARCHIVE INFORMATION
• Data sheet archived. Part no longer manufactured.
MRF5P20180HR6
RF Device Data
Freescale Semiconductor
9
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ARCHIVE INFORMATION
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© Freescale Semiconductor, Inc. 2008. All rights reserved.
MRF5P20180HR6
Document Number: MRF5P20180HR6
Rev. 2, 10/2008
10
RF Device Data
Freescale Semiconductor
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